Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (160907) > Seite 328 nach 2682
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LM4041BELT-1.2 | STMicroelectronics |
 Description: IC VREF SHUNT 0.2% SOT23-3Tolerance: ±0.2% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 100ppm/°C Output Type: Fixed Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 1.225V Noise - 10Hz to 10kHz: 60µVrms Part Status: Active Current - Cathode: 50 µA Current - Output: 12 mA |
auf Bestellung 11 Stücke: Lieferzeit 21-28 Tag (e) |
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LM4041CECT-1.2 | STMicroelectronics |
Description: IC VREF SHUNT 0.5% SOT323-5 Tolerance: ±0.5% Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Temperature Coefficient: 100ppm/°C Output Type: Fixed Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: SOT-323-5 Voltage - Output (Min/Fixed): 1.225V Noise - 10Hz to 10kHz: 60µVrms Current - Cathode: 50 µA Current - Output: 12 mA |
auf Bestellung 350 Stücke: Lieferzeit 21-28 Tag (e) |
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LM4041CELT-1.2 | STMicroelectronics |
Description: IC VREF SHUNT 0.5% SOT23-3 |
auf Bestellung 363 Stücke: Lieferzeit 21-28 Tag (e) |
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LM4041DECT-1.2 | STMicroelectronics |
Description: IC VREF SHUNT 1% SOT323-5 |
auf Bestellung 2913 Stücke: Lieferzeit 21-28 Tag (e) |
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LM4041DELT-1.2 | STMicroelectronics |
Description: IC VREF SHUNT 1.225V SOT23-3 |
auf Bestellung 1211 Stücke: Lieferzeit 21-28 Tag (e) |
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LNBH25LPQR | STMicroelectronics |
Description: IC REG CONV SAT TV 1OUT 24QFN Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Voltage - Output: 13V, 18.15V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 8V ~ 16V Operating Temperature: 0°C ~ 85°C Applications: Converter, Analog and Digital Satellite STB Receivers/SatTV Supplier Device Package: 24-QFN (4x4) Part Status: Active |
Produkt ist nicht verfügbar |
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EVAL6470H | STMicroelectronics |
Description: BOARD EVAL FOR L6470 Packaging: Box Function: Motor Controller/Driver, Stepper Type: Power Management Utilized IC / Part: L6470 Supplied Contents: Board(s) Embedded: No Part Status: Active |
Produkt ist nicht verfügbar |
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STB20N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 17.5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 900 Stücke: Lieferzeit 21-28 Tag (e) |
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STB21N90K5 | STMicroelectronics |
Description: MOSFET N-CH 900V 18.5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V |
auf Bestellung 1461 Stücke: Lieferzeit 21-28 Tag (e) |
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STD6N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 9A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
auf Bestellung 13228 Stücke: Lieferzeit 21-28 Tag (e) |
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STN0214 | STMicroelectronics |
Description: TRANS NPN 1200V 0.2A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300 mV @ 20mA, 100mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 200mA, 2V Supplier Device Package: SOT-223 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1.6 W |
auf Bestellung 900 Stücke: Lieferzeit 21-28 Tag (e) |
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STPS30L30DJF-TR | STMicroelectronics |
Description: DIODE SCHOTTKY 30V 30A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 30 A Current - Reverse Leakage @ Vr: 750 µA @ 30 V |
auf Bestellung 8424 Stücke: Lieferzeit 21-28 Tag (e) |
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STPS3L40SY | STMicroelectronics |
Description: DIODE SCHOTTKY 40V 3A SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SMC Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
auf Bestellung 2117 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH30R02DJF-TR | STMicroelectronics |
Description: DIODE GP 200V 30A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 26390 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH5R06DJF-TR | STMicroelectronics |
Description: DIODE GEN PURP 600V 5A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 5 A Current - Reverse Leakage @ Vr: 60 µA @ 600 V |
auf Bestellung 10950 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH8R03DJF-TR | STMicroelectronics |
Description: DIODE GEN PURP 300V 8A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 300 V |
auf Bestellung 5862 Stücke: Lieferzeit 21-28 Tag (e) |
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DIP1524-01D3 | STMicroelectronics |
Description: RF DIPLX 1589.655MHZ/2.55GHZ BGA Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, FCBGA Mounting Type: Surface Mount Type: Diplexer Frequency Bands (Low / High): 1573.42MHz ~ 1605.89MHz / 2.4GHz ~ 2.7GHz Low Band Attenuation (min / max dB): 20.00dB / - High Band Attenuation (min / max dB): 18.00dB / - Return Loss (Low Band / High Band): 10.0dB / 20.0dB Part Status: Active |
auf Bestellung 3469 Stücke: Lieferzeit 21-28 Tag (e) |
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MJB44H11T4 | STMicroelectronics |
Description: TRANS NPN 80V 10A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Supplier Device Package: D2PAK Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 50 W |
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STPS10L40CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTT 40V 5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: D2PAK Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
Produkt ist nicht verfügbar |
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STB20N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 17.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
Produkt ist nicht verfügbar |
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STB21N90K5 | STMicroelectronics |
Description: MOSFET N-CH 900V 18.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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STD6N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 9A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
auf Bestellung 12500 Stücke: Lieferzeit 21-28 Tag (e) |
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STN0214 | STMicroelectronics |
Description: TRANS NPN 1200V 0.2A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300 mV @ 20mA, 100mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 200mA, 2V Supplier Device Package: SOT-223 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1.6 W |
Produkt ist nicht verfügbar |
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STPS30L30DJF-TR | STMicroelectronics |
Description: DIODE SCHOTTKY 30V 30A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 30 A Current - Reverse Leakage @ Vr: 750 µA @ 30 V |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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STPS3L40SY | STMicroelectronics |
Description: DIODE SCHOTTKY 40V 3A SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SMC Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
Produkt ist nicht verfügbar |
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STTH30R02DJF-TR | STMicroelectronics |
Description: DIODE GP 200V 30A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH5R06DJF-TR | STMicroelectronics |
Description: DIODE GEN PURP 600V 5A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 5 A Current - Reverse Leakage @ Vr: 60 µA @ 600 V |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH8R03DJF-TR | STMicroelectronics |
Description: DIODE GEN PURP 300V 8A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 300 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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DIP1524-01D3 | STMicroelectronics |
Description: RF DIPLX 1589.655MHZ/2.55GHZ BGA Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, FCBGA Mounting Type: Surface Mount Type: Diplexer Frequency Bands (Low / High): 1573.42MHz ~ 1605.89MHz / 2.4GHz ~ 2.7GHz Low Band Attenuation (min / max dB): 20.00dB / - High Band Attenuation (min / max dB): 18.00dB / - Return Loss (Low Band / High Band): 10.0dB / 20.0dB Part Status: Active |
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.jpg "LET9060") |
LET9060 | STMicroelectronics |
Description: RF MOSFET LDMOS 28V POWERSO-10RF Packaging: Tube Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Current Rating (Amps): 12A Frequency: 960MHz Power - Output: 60W Gain: 17.2dB Technology: LDMOS Supplier Device Package: PowerSO-10RF (Formed Lead) Part Status: Obsolete Voltage - Rated: 80 V Voltage - Test: 28 V Current - Test: 300 mA |
Produkt ist nicht verfügbar |
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.jpg "LET9060S") |
LET9060S | STMicroelectronics |
Description: RF MOSFET LDMOS 28V POWERSO-10RF Packaging: Tube Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) Current Rating (Amps): 12A Frequency: 960MHz Power - Output: 60W Gain: 17.2dB Technology: LDMOS Supplier Device Package: PowerSO-10RF (Straight Lead) Part Status: Obsolete Voltage - Rated: 80 V Voltage - Test: 28 V Current - Test: 300 mA |
auf Bestellung 24 Stücke: Lieferzeit 21-28 Tag (e) |
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STF6N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 9A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
auf Bestellung 1578 Stücke: Lieferzeit 21-28 Tag (e) |
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STFI10NK60Z | STMicroelectronics |
Description: MOSFET N-CH 600V 10A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V |
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STFI13NK60Z | STMicroelectronics |
Description: MOSFET N-CH 600V 13A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V |
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STFI13NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 11A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V |
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STFI20NK50Z | STMicroelectronics |
Description: MOSFET N-CH 500V 17A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
Produkt ist nicht verfügbar |
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STFI24NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 17A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V |
auf Bestellung 1331 Stücke: Lieferzeit 21-28 Tag (e) |
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STFI26NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 20A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V |
Produkt ist nicht verfügbar |
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STFI34NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 29A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V |
Produkt ist nicht verfügbar |
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STP20N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 17.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 905 Stücke: Lieferzeit 21-28 Tag (e) |
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STP21N90K5 | STMicroelectronics |
Description: MOSFET N-CH 900V 18.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V |
auf Bestellung 976 Stücke: Lieferzeit 21-28 Tag (e) |
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STP6N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 9A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
auf Bestellung 413 Stücke: Lieferzeit 21-28 Tag (e) |
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STW20N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 17.5A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 561 Stücke: Lieferzeit 21-28 Tag (e) |
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STW21N90K5 | STMicroelectronics |
Description: MOSFET N-CH 900V 18.5A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V |
Produkt ist nicht verfügbar |
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STW6N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 9A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
auf Bestellung 263 Stücke: Lieferzeit 21-28 Tag (e) |
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MJB44H11T4 | STMicroelectronics |
Description: TRANS NPN 80V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Supplier Device Package: D2PAK Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 50 W |
Produkt ist nicht verfügbar |
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STM32F0DISCOVERY | STMicroelectronics |
Description: DISCOVERY STM32F051R8T6 EVAL BRD Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M0 Board Type: Evaluation Platform Utilized IC / Part: STM32F051R8T6 Platform: Discovery Part Status: Active |
auf Bestellung 258 Stücke: Lieferzeit 21-28 Tag (e) |
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M24LR04E-RDW6T/2 | STMicroelectronics |
Description: IC RFID TRANSP 13.56MHZ 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Transponder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Standards: ISO 15693, ISO 18000-3, NFC Supplier Device Package: 8-TSSOP Part Status: Active |
Produkt ist nicht verfügbar |
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M24LR04E-RMN6T/2 | STMicroelectronics |
Description: IC RFID TRANSP 13.56MHZ 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Transponder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Standards: ISO 15693, ISO 18000-3, NFC Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 117500 Stücke: Lieferzeit 21-28 Tag (e) |
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STM32L152D-EVAL | STMicroelectronics |
Description: STM32L152 EVAL BRD Packaging: Bulk Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: ARM® Cortex®-M3 Board Type: Evaluation Platform Utilized IC / Part: STM32L152 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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M24LR04E-RDW6T/2 | STMicroelectronics |
Description: IC RFID TRANSP 13.56MHZ 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Transponder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Standards: ISO 15693, ISO 18000-3, NFC Supplier Device Package: 8-TSSOP Part Status: Active |
auf Bestellung 7032 Stücke: Lieferzeit 21-28 Tag (e) |
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M24LR04E-RMN6T/2 | STMicroelectronics |
Description: IC RFID TRANSP 13.56MHZ 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Transponder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Standards: ISO 15693, ISO 18000-3, NFC Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 119120 Stücke: Lieferzeit 21-28 Tag (e) |
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TL431ACZ-AP | STMicroelectronics |
 Description: IC VREF SHUNT ADJ 1% TO92-3Packaging: Cut Tape (CT) Tolerance: ±1% Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: 0°C ~ 70°C (TA) Supplier Device Package: TO-92-3 Voltage - Output (Min/Fixed): 2.495V Part Status: Active Current - Cathode: 600 µA Current - Output: 100 mA Voltage - Output (Max): 36 V |
Produkt ist nicht verfügbar |
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A5975AD | STMicroelectronics |
Description: IC REG BUCK ADJ 2.5A 8HSOP Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2.5A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 500kHz Voltage - Input (Max): 36V Topology: Buck Supplier Device Package: 8-HSOP Synchronous Rectifier: No Voltage - Output (Max): 35V Voltage - Input (Min): 4V Voltage - Output (Min/Fixed): 1.235V Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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STEVAL-MKI107V2 | STMicroelectronics |
Description: BOARD ADAPTER L3GD20 DIL24 Packaging: Bulk Sensitivity: 70m°/s, 17.5m°/s, 8.75m°/s Interface: I2C, Serial, SPI Voltage - Supply: 2.4V ~ 3.6V Sensor Type: Gyroscope, 3 Axis Utilized IC / Part: L3GD20 Supplied Contents: Board(s) Embedded: No Sensing Range: ±250°/sec, ±500°/sec, ±2000°/sec Part Status: Obsolete |
Produkt ist nicht verfügbar |
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STEVAL-IDZ401V1 | STMicroelectronics |
Description: EVAL BOARD |
auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) |
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STEVAL-ILH004V1 | STMicroelectronics |
Description: BOARD EVAL BALLAST L6382D5 |
Produkt ist nicht verfügbar |
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STEVAL-ILL038V1 | STMicroelectronics |
Description: BOARD EVAL LED DRIVER L6585DE |
Produkt ist nicht verfügbar |
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STEVAL-TLL008V1 | STMicroelectronics |
Description: BOARD EVAL LED DRIVER STCF04 Features: Camera Flash and Torch Modes, Programmable Output Current Packaging: Bulk Voltage - Output: 2.5V ~ 5V Voltage - Input: 2.7V ~ 5V Utilized IC / Part: STCF04 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Obsolete |
auf Bestellung 5 Stücke: Lieferzeit 21-28 Tag (e) |
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STEVAL-ISB013V1 | STMicroelectronics |
Description: BOARD EVAL BATT MONITOR STC3105 Packaging: Bulk Function: Battery Monitor Type: Power Management Utilized IC / Part: STC3105 Supplied Contents: Board(s) Primary Attributes: Monitors Current, Voltage Embedded: No Part Status: Obsolete |
Produkt ist nicht verfügbar |
| LM4041BELT-1.2 |
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Hersteller: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT23-3
Tolerance: ±0.2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.225V
Noise - 10Hz to 10kHz: 60µVrms
Part Status: Active
Current - Cathode: 50 µA
Current - Output: 12 mA
Description: IC VREF SHUNT 0.2% SOT23-3
Tolerance: ±0.2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.225V
Noise - 10Hz to 10kHz: 60µVrms
Part Status: Active
Current - Cathode: 50 µA
Current - Output: 12 mA
auf Bestellung 11 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 3.61 EUR |
| 10+ | 3.23 EUR |
| LM4041CECT-1.2 |
|
Hersteller: STMicroelectronics
Description: IC VREF SHUNT 0.5% SOT323-5
Tolerance: ±0.5%
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 1.225V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 50 µA
Current - Output: 12 mA
Description: IC VREF SHUNT 0.5% SOT323-5
Tolerance: ±0.5%
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 1.225V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 50 µA
Current - Output: 12 mA
auf Bestellung 350 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 3.61 EUR |
| 10+ | 3.23 EUR |
| 25+ | 3.07 EUR |
| 100+ | 2.52 EUR |
| 250+ | 2.36 EUR |
| LM4041CELT-1.2 |
|
Hersteller: STMicroelectronics
Description: IC VREF SHUNT 0.5% SOT23-3
Description: IC VREF SHUNT 0.5% SOT23-3
auf Bestellung 363 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 3.64 EUR |
| 10+ | 3.27 EUR |
| 25+ | 3.1 EUR |
| 100+ | 2.54 EUR |
| 250+ | 2.38 EUR |
| LM4041DECT-1.2 |
|
Hersteller: STMicroelectronics
Description: IC VREF SHUNT 1% SOT323-5
Description: IC VREF SHUNT 1% SOT323-5
auf Bestellung 2913 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 3.54 EUR |
| 10+ | 3.17 EUR |
| 25+ | 3.01 EUR |
| 100+ | 2.47 EUR |
| 250+ | 2.31 EUR |
| 500+ | 2.04 EUR |
| 1000+ | 1.77 EUR |
| LM4041DELT-1.2 |
|
Hersteller: STMicroelectronics
Description: IC VREF SHUNT 1.225V SOT23-3
Description: IC VREF SHUNT 1.225V SOT23-3
auf Bestellung 1211 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 3.38 EUR |
| 10+ | 3.02 EUR |
| 25+ | 2.86 EUR |
| 100+ | 2.35 EUR |
| 250+ | 2.2 EUR |
| 500+ | 1.94 EUR |
| 1000+ | 1.69 EUR |
| LNBH25LPQR |
|
Hersteller: STMicroelectronics
Description: IC REG CONV SAT TV 1OUT 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Voltage - Output: 13V, 18.15V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 8V ~ 16V
Operating Temperature: 0°C ~ 85°C
Applications: Converter, Analog and Digital Satellite STB Receivers/SatTV
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Description: IC REG CONV SAT TV 1OUT 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Voltage - Output: 13V, 18.15V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 8V ~ 16V
Operating Temperature: 0°C ~ 85°C
Applications: Converter, Analog and Digital Satellite STB Receivers/SatTV
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Produkt ist nicht verfügbar
| EVAL6470H |
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Hersteller: STMicroelectronics
Description: BOARD EVAL FOR L6470
Packaging: Box
Function: Motor Controller/Driver, Stepper
Type: Power Management
Utilized IC / Part: L6470
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Description: BOARD EVAL FOR L6470
Packaging: Box
Function: Motor Controller/Driver, Stepper
Type: Power Management
Utilized IC / Part: L6470
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Produkt ist nicht verfügbar
| STB20N95K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 17.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 950V 17.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 900 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 18.85 EUR |
| 10+ | 16.16 EUR |
| 100+ | 13.47 EUR |
| 500+ | 11.88 EUR |
| STB21N90K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 900V 18.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V
Description: MOSFET N-CH 900V 18.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V
auf Bestellung 1461 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 15.37 EUR |
| 10+ | 13.17 EUR |
| 100+ | 10.97 EUR |
| 500+ | 9.68 EUR |
| STD6N95K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N-CH 950V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 13228 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 6.5 EUR |
| 10+ | 5.46 EUR |
| 100+ | 4.42 EUR |
| 500+ | 3.93 EUR |
| 1000+ | 3.36 EUR |
| STN0214 |
|
Hersteller: STMicroelectronics
Description: TRANS NPN 1200V 0.2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300 mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 200mA, 2V
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1.6 W
Description: TRANS NPN 1200V 0.2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300 mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 200mA, 2V
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1.6 W
auf Bestellung 900 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 2.55 EUR |
| 13+ | 2.08 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.37 EUR |
| STPS30L30DJF-TR |
|
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 30V 30A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 30 V
Description: DIODE SCHOTTKY 30V 30A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 30 V
auf Bestellung 8424 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 2.96 EUR |
| 11+ | 2.41 EUR |
| 100+ | 1.87 EUR |
| 500+ | 1.59 EUR |
| 1000+ | 1.29 EUR |
| STPS3L40SY |
|
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 2117 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 2.42 EUR |
| 14+ | 1.99 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.07 EUR |
| STTH30R02DJF-TR |
|
Hersteller: STMicroelectronics
Description: DIODE GP 200V 30A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GP 200V 30A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 26390 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 4.65 EUR |
| 10+ | 3.87 EUR |
| 100+ | 3.08 EUR |
| 500+ | 2.61 EUR |
| 1000+ | 2.21 EUR |
| STTH5R06DJF-TR |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 5 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
Description: DIODE GEN PURP 600V 5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 5 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
auf Bestellung 10950 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 4.5 EUR |
| 10+ | 3.72 EUR |
| 100+ | 2.96 EUR |
| 500+ | 2.51 EUR |
| 1000+ | 2.13 EUR |
| STTH8R03DJF-TR |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 300V 8A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Description: DIODE GEN PURP 300V 8A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
auf Bestellung 5862 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 4.47 EUR |
| 10+ | 3.7 EUR |
| 100+ | 2.95 EUR |
| 500+ | 2.49 EUR |
| 1000+ | 2.11 EUR |
| DIP1524-01D3 |
|
Hersteller: STMicroelectronics
Description: RF DIPLX 1589.655MHZ/2.55GHZ BGA
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: Diplexer
Frequency Bands (Low / High): 1573.42MHz ~ 1605.89MHz / 2.4GHz ~ 2.7GHz
Low Band Attenuation (min / max dB): 20.00dB / -
High Band Attenuation (min / max dB): 18.00dB / -
Return Loss (Low Band / High Band): 10.0dB / 20.0dB
Part Status: Active
Description: RF DIPLX 1589.655MHZ/2.55GHZ BGA
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: Diplexer
Frequency Bands (Low / High): 1573.42MHz ~ 1605.89MHz / 2.4GHz ~ 2.7GHz
Low Band Attenuation (min / max dB): 20.00dB / -
High Band Attenuation (min / max dB): 18.00dB / -
Return Loss (Low Band / High Band): 10.0dB / 20.0dB
Part Status: Active
auf Bestellung 3469 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 1.09 EUR |
| 27+ | 0.97 EUR |
| 30+ | 0.88 EUR |
| 100+ | 0.77 EUR |
| 250+ | 0.67 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.47 EUR |
| MJB44H11T4 |
|
Hersteller: STMicroelectronics
Description: TRANS NPN 80V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: D2PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Description: TRANS NPN 80V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: D2PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Produkt ist nicht verfügbar
| STPS10L40CG-TR |
|
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTT 40V 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE ARRAY SCHOTT 40V 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
| STB20N95K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 17.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 950V 17.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Produkt ist nicht verfügbar
| STB21N90K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 900V 18.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V
Description: MOSFET N-CH 900V 18.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 8.71 EUR |
| STD6N95K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N-CH 950V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 3.17 EUR |
| 5000+ | 3.04 EUR |
| STN0214 |
|
Hersteller: STMicroelectronics
Description: TRANS NPN 1200V 0.2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300 mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 200mA, 2V
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1.6 W
Description: TRANS NPN 1200V 0.2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300 mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 200mA, 2V
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1.6 W
Produkt ist nicht verfügbar
| STPS30L30DJF-TR |
|
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 30V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 30 V
Description: DIODE SCHOTTKY 30V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.22 EUR |
| 6000+ | 1.16 EUR |
| STPS3L40SY |
|
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
| STTH30R02DJF-TR |
|
Hersteller: STMicroelectronics
Description: DIODE GP 200V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GP 200V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 2.1 EUR |
| 6000+ | 2.02 EUR |
| 9000+ | 1.95 EUR |
| STTH5R06DJF-TR |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 5 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
Description: DIODE GEN PURP 600V 5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 5 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 2.02 EUR |
| 6000+ | 1.94 EUR |
| STTH8R03DJF-TR |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 300V 8A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Description: DIODE GEN PURP 300V 8A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 2.01 EUR |
| DIP1524-01D3 |
|
Hersteller: STMicroelectronics
Description: RF DIPLX 1589.655MHZ/2.55GHZ BGA
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: Diplexer
Frequency Bands (Low / High): 1573.42MHz ~ 1605.89MHz / 2.4GHz ~ 2.7GHz
Low Band Attenuation (min / max dB): 20.00dB / -
High Band Attenuation (min / max dB): 18.00dB / -
Return Loss (Low Band / High Band): 10.0dB / 20.0dB
Part Status: Active
Description: RF DIPLX 1589.655MHZ/2.55GHZ BGA
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: Diplexer
Frequency Bands (Low / High): 1573.42MHz ~ 1605.89MHz / 2.4GHz ~ 2.7GHz
Low Band Attenuation (min / max dB): 20.00dB / -
High Band Attenuation (min / max dB): 18.00dB / -
Return Loss (Low Band / High Band): 10.0dB / 20.0dB
Part Status: Active
Produkt ist nicht verfügbar
| LET9060 |
|
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
Produkt ist nicht verfügbar
| LET9060S |
|
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
auf Bestellung 24 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 131.22 EUR |
| 10+ | 119.3 EUR |
| STF6N95K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N-CH 950V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 1578 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 5.12 EUR |
| 50+ | 4.1 EUR |
| 100+ | 3.38 EUR |
| 500+ | 2.86 EUR |
| 1000+ | 2.42 EUR |
| STFI10NK60Z |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Description: MOSFET N-CH 600V 10A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Produkt ist nicht verfügbar
| STFI13NK60Z |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 13A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Description: MOSFET N-CH 600V 13A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Produkt ist nicht verfügbar
| STFI13NM60N |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Description: MOSFET N-CH 600V 11A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Produkt ist nicht verfügbar
| STFI20NK50Z |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 17A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 500V 17A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
| STFI24NM60N |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 17A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Description: MOSFET N-CH 600V 17A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 1331 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 9.44 EUR |
| 10+ | 7.93 EUR |
| 100+ | 6.42 EUR |
| 500+ | 5.7 EUR |
| 1000+ | 4.88 EUR |
| STFI26NM60N |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 20A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Description: MOSFET N-CH 600V 20A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Produkt ist nicht verfügbar
| STFI34NM60N |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 29A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V
Description: MOSFET N-CH 600V 29A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V
Produkt ist nicht verfügbar
| STP20N95K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 17.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 950V 17.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 905 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 15.37 EUR |
| 50+ | 12.26 EUR |
| 100+ | 10.97 EUR |
| 500+ | 9.68 EUR |
| STP21N90K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 900V 18.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V
Description: MOSFET N-CH 900V 18.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V
auf Bestellung 976 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 15.39 EUR |
| 50+ | 12.28 EUR |
| 100+ | 10.99 EUR |
| 500+ | 9.7 EUR |
| STP6N95K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N-CH 950V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 413 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 5.69 EUR |
| 50+ | 4.56 EUR |
| 100+ | 3.75 EUR |
| STW20N95K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 17.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 950V 17.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 561 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 15.76 EUR |
| 30+ | 12.57 EUR |
| 120+ | 11.25 EUR |
| 510+ | 9.92 EUR |
| STW21N90K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 900V 18.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V
Description: MOSFET N-CH 900V 18.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V
Produkt ist nicht verfügbar
| STW6N95K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N-CH 950V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 263 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 6.84 EUR |
| 30+ | 5.5 EUR |
| 120+ | 4.52 EUR |
| MJB44H11T4 |
|
Hersteller: STMicroelectronics
Description: TRANS NPN 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: D2PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Description: TRANS NPN 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: D2PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Produkt ist nicht verfügbar
| STM32F0DISCOVERY |
|
Hersteller: STMicroelectronics
Description: DISCOVERY STM32F051R8T6 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Board Type: Evaluation Platform
Utilized IC / Part: STM32F051R8T6
Platform: Discovery
Part Status: Active
Description: DISCOVERY STM32F051R8T6 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Board Type: Evaluation Platform
Utilized IC / Part: STM32F051R8T6
Platform: Discovery
Part Status: Active
auf Bestellung 258 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 22.67 EUR |
| M24LR04E-RDW6T/2 |
|
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Part Status: Active
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
| M24LR04E-RMN6T/2 |
|
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-SOIC
Part Status: Active
Description: IC RFID TRANSP 13.56MHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 117500 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.37 EUR |
| 5000+ | 1.29 EUR |
| 12500+ | 1.25 EUR |
| STM32L152D-EVAL |
|
Hersteller: STMicroelectronics
Description: STM32L152 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32L152
Part Status: Obsolete
Description: STM32L152 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32L152
Part Status: Obsolete
Produkt ist nicht verfügbar
| M24LR04E-RDW6T/2 |
|
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Part Status: Active
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 7032 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 1.87 EUR |
| 16+ | 1.71 EUR |
| 25+ | 1.68 EUR |
| 50+ | 1.67 EUR |
| 100+ | 1.5 EUR |
| 250+ | 1.48 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.41 EUR |
| M24LR04E-RMN6T/2 |
|
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-SOIC
Part Status: Active
Description: IC RFID TRANSP 13.56MHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 119120 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 1.87 EUR |
| 16+ | 1.71 EUR |
| 25+ | 1.69 EUR |
| 50+ | 1.68 EUR |
| 100+ | 1.5 EUR |
| 250+ | 1.49 EUR |
| 500+ | 1.47 EUR |
| 1000+ | 1.41 EUR |
| TL431ACZ-AP | |
|
Hersteller: STMicroelectronics
Description: IC VREF SHUNT ADJ 1% TO92-3
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 1% TO92-3
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
| A5975AD |
|
Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 2.5A 8HSOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HSOP
Synchronous Rectifier: No
Voltage - Output (Max): 35V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 1.235V
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG BUCK ADJ 2.5A 8HSOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HSOP
Synchronous Rectifier: No
Voltage - Output (Max): 35V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 1.235V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
| STEVAL-MKI107V2 |
|
Hersteller: STMicroelectronics
Description: BOARD ADAPTER L3GD20 DIL24
Packaging: Bulk
Sensitivity: 70m°/s, 17.5m°/s, 8.75m°/s
Interface: I2C, Serial, SPI
Voltage - Supply: 2.4V ~ 3.6V
Sensor Type: Gyroscope, 3 Axis
Utilized IC / Part: L3GD20
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±250°/sec, ±500°/sec, ±2000°/sec
Part Status: Obsolete
Description: BOARD ADAPTER L3GD20 DIL24
Packaging: Bulk
Sensitivity: 70m°/s, 17.5m°/s, 8.75m°/s
Interface: I2C, Serial, SPI
Voltage - Supply: 2.4V ~ 3.6V
Sensor Type: Gyroscope, 3 Axis
Utilized IC / Part: L3GD20
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±250°/sec, ±500°/sec, ±2000°/sec
Part Status: Obsolete
Produkt ist nicht verfügbar
| STEVAL-IDZ401V1 |
|
Hersteller: STMicroelectronics
Description: EVAL BOARD
Description: EVAL BOARD
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)| STEVAL-ILH004V1 |
|
Hersteller: STMicroelectronics
Description: BOARD EVAL BALLAST L6382D5
Description: BOARD EVAL BALLAST L6382D5
Produkt ist nicht verfügbar
| STEVAL-ILL038V1 |
|
Hersteller: STMicroelectronics
Description: BOARD EVAL LED DRIVER L6585DE
Description: BOARD EVAL LED DRIVER L6585DE
Produkt ist nicht verfügbar
| STEVAL-TLL008V1 |
|
Hersteller: STMicroelectronics
Description: BOARD EVAL LED DRIVER STCF04
Features: Camera Flash and Torch Modes, Programmable Output Current
Packaging: Bulk
Voltage - Output: 2.5V ~ 5V
Voltage - Input: 2.7V ~ 5V
Utilized IC / Part: STCF04
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Description: BOARD EVAL LED DRIVER STCF04
Features: Camera Flash and Torch Modes, Programmable Output Current
Packaging: Bulk
Voltage - Output: 2.5V ~ 5V
Voltage - Input: 2.7V ~ 5V
Utilized IC / Part: STCF04
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
auf Bestellung 5 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 282.75 EUR |
| STEVAL-ISB013V1 |
|
Hersteller: STMicroelectronics
Description: BOARD EVAL BATT MONITOR STC3105
Packaging: Bulk
Function: Battery Monitor
Type: Power Management
Utilized IC / Part: STC3105
Supplied Contents: Board(s)
Primary Attributes: Monitors Current, Voltage
Embedded: No
Part Status: Obsolete
Description: BOARD EVAL BATT MONITOR STC3105
Packaging: Bulk
Function: Battery Monitor
Type: Power Management
Utilized IC / Part: STC3105
Supplied Contents: Board(s)
Primary Attributes: Monitors Current, Voltage
Embedded: No
Part Status: Obsolete
Produkt ist nicht verfügbar