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RS1MLS RVG RS1MLS RVG Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1KV 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS1MLSHRVG RS1MLSHRVG Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1KV 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS1MLSHRVG RS1MLSHRVG Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1KV 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS1MLW RVG RS1MLW RVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_A1511.pdf Description: DIODE GEN PURP 1KV 1A SOD123W
Produkt ist nicht verfügbar
RS1MLW RVG RS1MLW RVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_A1511.pdf Description: DIODE GEN PURP 1KV 1A SOD123W
auf Bestellung 3497 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.25 EUR
29+ 0.93 EUR
100+ 0.58 EUR
500+ 0.4 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 21
RS1MLWHRVG RS1MLWHRVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 1KV 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS1MLWHRVG RS1MLWHRVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 1KV 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS2BAHR3G RS2BAHR3G Taiwan Semiconductor Corporation RS2AA%20SERIES_H2102.pdf Description: DIODE GEN PURP 100V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
RS2BAHR3G RS2BAHR3G Taiwan Semiconductor Corporation RS2AA%20SERIES_H2102.pdf Description: DIODE GEN PURP 100V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
RS2J R5G RS2J R5G Taiwan Semiconductor Corporation RS2A%20SERIES_K2102.pdf Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
RS2J R5G RS2J R5G Taiwan Semiconductor Corporation RS2A%20SERIES_K2102.pdf Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.25 EUR
25+ 1.08 EUR
100+ 0.75 EUR
Mindestbestellmenge: 21
RS2JA R3G RS2JA R3G Taiwan Semiconductor Corporation RS2AA%20SERIES_H2102.pdf Description: DIODE GEN PURP 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
RS2JA R3G RS2JA R3G Taiwan Semiconductor Corporation RS2AA%20SERIES_H2102.pdf Description: DIODE GEN PURP 600V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
RS2JAHR3G RS2JAHR3G Taiwan Semiconductor Corporation RS2AA%20SERIES_H2102.pdf Description: DIODE GEN PURP 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
RS2JAHR3G RS2JAHR3G Taiwan Semiconductor Corporation RS2AA%20SERIES_H2102.pdf Description: DIODE GEN PURP 600V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 329 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.25 EUR
25+ 1.06 EUR
100+ 0.74 EUR
Mindestbestellmenge: 21
RS2K R5G RS2K R5G Taiwan Semiconductor Corporation RS2A%20SERIES_K2102.pdf Description: DIODE GEN PURP 800V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
RS2K R5G RS2K R5G Taiwan Semiconductor Corporation RS2A%20SERIES_K2102.pdf Description: DIODE GEN PURP 800V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 721 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.27 EUR
24+ 1.09 EUR
100+ 0.76 EUR
Mindestbestellmenge: 21
RS2KA R3G RS2KA R3G Taiwan Semiconductor Corporation RS2AA%20SERIES_H2102.pdf Description: DIODE GEN PURP 800V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
RS2KA R3G RS2KA R3G Taiwan Semiconductor Corporation RS2AA%20SERIES_H2102.pdf Description: DIODE GEN PURP 800V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
RS2KAHR3G RS2KAHR3G Taiwan Semiconductor Corporation RS2AA%20SERIES_H2102.pdf Description: DIODE GEN PURP 800V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
RS2KAHR3G RS2KAHR3G Taiwan Semiconductor Corporation RS2AA%20SERIES_H2102.pdf Description: DIODE GEN PURP 800V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
RS2M R5G RS2M R5G Taiwan Semiconductor Corporation RS2A%20SERIES_K2102.pdf Description: DIODE GEN PURP 1KV 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS2M R5G RS2M R5G Taiwan Semiconductor Corporation RS2A%20SERIES_K2102.pdf Description: DIODE GEN PURP 1KV 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 32 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.27 EUR
24+ 1.09 EUR
Mindestbestellmenge: 21
RS2MA R3G RS2MA R3G Taiwan Semiconductor Corporation RS2AA%20SERIES_H2102.pdf Description: DIODE GEN PURP 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS2MA R3G RS2MA R3G Taiwan Semiconductor Corporation RS2AA%20SERIES_H2102.pdf Description: DIODE GEN PURP 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 526 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
29+ 0.93 EUR
100+ 0.64 EUR
500+ 0.5 EUR
Mindestbestellmenge: 24
RS2MAHR3G RS2MAHR3G Taiwan Semiconductor Corporation RS2AA%20SERIES_H2102.pdf Description: DIODE GEN PURP 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS2MAHR3G RS2MAHR3G Taiwan Semiconductor Corporation RS2AA%20SERIES_H2102.pdf Description: DIODE GEN PURP 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RSFGL R3G RSFGL R3G Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 400V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFGL R3G RSFGL R3G Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 400V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFGL RVG RSFGL RVG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 400V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFGL RVG RSFGL RVG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 400V 500MA SUBSMA
auf Bestellung 2695 Stücke:
Lieferzeit 21-28 Tag (e)
RSFJL R3G RSFJL R3G Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
auf Bestellung 1627 Stücke:
Lieferzeit 21-28 Tag (e)
S1A R3G S1A R3G Taiwan Semiconductor Corporation S1A%20SERIES_R15.pdf Description: DIODE GEN PURP 50V 1A DO214AC
Produkt ist nicht verfügbar
S1A R3G S1A R3G Taiwan Semiconductor Corporation S1A%20SERIES_R15.pdf Description: DIODE GEN PURP 50V 1A DO214AC
auf Bestellung 1294 Stücke:
Lieferzeit 21-28 Tag (e)
S1B R3G S1B R3G Taiwan Semiconductor Corporation S1A%20SERIES_R15.pdf Description: DIODE GEN PURP 100V 1A DO214AC
auf Bestellung 15236 Stücke:
Lieferzeit 21-28 Tag (e)
S1D R3G S1D R3G Taiwan Semiconductor Corporation S1A%20SERIES_R15.pdf Description: DIODE GEN PURP 200V 1A DO214AC
auf Bestellung 2442 Stücke:
Lieferzeit 21-28 Tag (e)
S1D R3G S1D R3G Taiwan Semiconductor Corporation S1A%20SERIES_R15.pdf Description: DIODE GEN PURP 200V 1A DO214AC
auf Bestellung 1800 Stücke:
Lieferzeit 21-28 Tag (e)
S1D R3G S1D R3G Taiwan Semiconductor Corporation S1A%20SERIES_R15.pdf Description: DIODE GEN PURP 200V 1A DO214AC
auf Bestellung 2442 Stücke:
Lieferzeit 21-28 Tag (e)
S1DL RVG S1DL RVG Taiwan Semiconductor Corporation S1AL%20SERIES_O15.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
S1DL RVG S1DL RVG Taiwan Semiconductor Corporation S1AL%20SERIES_O15.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
auf Bestellung 3857 Stücke:
Lieferzeit 21-28 Tag (e)
S1GL R3G S1GL R3G Taiwan Semiconductor Corporation S1xL_Rev.O15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
auf Bestellung 1800 Stücke:
Lieferzeit 21-28 Tag (e)
1800+0.45 EUR
Mindestbestellmenge: 1800
S1GL R3G S1GL R3G Taiwan Semiconductor Corporation S1xL_Rev.O15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
auf Bestellung 2510 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.46 EUR
23+ 1.18 EUR
100+ 0.8 EUR
500+ 0.6 EUR
Mindestbestellmenge: 18
S1JLHRVG S1JLHRVG Taiwan Semiconductor Corporation S1AL%20SERIES_O15.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Produkt ist nicht verfügbar
S1JLHRVG S1JLHRVG Taiwan Semiconductor Corporation S1AL%20SERIES_O15.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
auf Bestellung 1008 Stücke:
Lieferzeit 21-28 Tag (e)
20+1.3 EUR
28+ 0.96 EUR
100+ 0.54 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 20
S1JLSHRVG S1JLSHRVG Taiwan Semiconductor Corporation S1DLS%20SERIES_H2103.pdf Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
S1JLSHRVG S1JLSHRVG Taiwan Semiconductor Corporation S1DLS%20SERIES_H2103.pdf Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 8900 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.17 EUR
30+ 0.89 EUR
100+ 0.55 EUR
500+ 0.38 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 23
S1JM RSG S1JM RSG Taiwan Semiconductor Corporation S1GM%20SERIES_I2103.pdf Description: DIODE GEN PURP 600V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
S1JM RSG S1JM RSG Taiwan Semiconductor Corporation S1GM%20SERIES_I2103.pdf Description: DIODE GEN PURP 600V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 5253 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
28+ 0.94 EUR
100+ 0.7 EUR
500+ 0.55 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 24
S1KL R3G S1KL R3G Taiwan Semiconductor Corporation S1A%20SERIES_S2102.pdf Description: DIODE GEN PURP 800V 1A SUB SMA
auf Bestellung 1800 Stücke:
Lieferzeit 21-28 Tag (e)
1800+0.45 EUR
Mindestbestellmenge: 1800
S1KL R3G S1KL R3G Taiwan Semiconductor Corporation S1A%20SERIES_S2102.pdf Description: DIODE GEN PURP 800V 1A SUB SMA
auf Bestellung 3012 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.14 EUR
27+ 0.98 EUR
100+ 0.73 EUR
500+ 0.58 EUR
Mindestbestellmenge: 23
S1KLSHRVG S1KLSHRVG Taiwan Semiconductor Corporation S1DLS%20SERIES_H2103.pdf Description: DIODE GP 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
S1KLSHRVG S1KLSHRVG Taiwan Semiconductor Corporation S1DLS%20SERIES_H2103.pdf Description: DIODE GP 800V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
S1M R3G S1M R3G Taiwan Semiconductor Corporation S1A%20SERIES_S2102.pdf Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
S1ML R3G S1ML R3G Taiwan Semiconductor Corporation S1AL%20SERIES_O15.pdf Description: DIODE GEN PURP 1KV 1A SUB SMA
auf Bestellung 1800 Stücke:
Lieferzeit 21-28 Tag (e)
S1ML R3G S1ML R3G Taiwan Semiconductor Corporation S1AL%20SERIES_O15.pdf Description: DIODE GEN PURP 1KV 1A SUB SMA
auf Bestellung 1912 Stücke:
Lieferzeit 21-28 Tag (e)
S1MLHRVG S1MLHRVG Taiwan Semiconductor Corporation S1AL%20SERIES_Q2108.pdf Description: DIODE GEN PURP 1KV 1A SUB SMA
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.25 EUR
6000+ 0.23 EUR
Mindestbestellmenge: 3000
S1MLHRVG S1MLHRVG Taiwan Semiconductor Corporation S1AL%20SERIES_Q2108.pdf Description: DIODE GEN PURP 1KV 1A SUB SMA
auf Bestellung 9025 Stücke:
Lieferzeit 21-28 Tag (e)
20+1.35 EUR
26+ 1 EUR
100+ 0.57 EUR
500+ 0.38 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 20
S1MLS RVG S1MLS RVG Taiwan Semiconductor Corporation S1DLS%20SERIES_F1707.pdf Description: DIODE GEN PURP 1KV 1.2A SOD123HE
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
S1MLS RVG S1MLS RVG Taiwan Semiconductor Corporation S1DLS%20SERIES_F1707.pdf Description: DIODE GEN PURP 1KV 1.2A SOD123HE
auf Bestellung 9556 Stücke:
Lieferzeit 21-28 Tag (e)
S1MLSHRVG S1MLSHRVG Taiwan Semiconductor Corporation S1DLS%20SERIES_F1707.pdf Description: DIODE GEN PURP 1KV 1.2A SOD123HE
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RS1MLS RVG
RS1MLS RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS1MLSHRVG
RS1MLSHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS1MLSHRVG
RS1MLSHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS1MLW RVG RS1DLW%20SERIES_A1511.pdf
RS1MLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SOD123W
Produkt ist nicht verfügbar
RS1MLW RVG RS1DLW%20SERIES_A1511.pdf
RS1MLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SOD123W
auf Bestellung 3497 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.25 EUR
29+ 0.93 EUR
100+ 0.58 EUR
500+ 0.4 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 21
RS1MLWHRVG RS1DLW%20SERIES_C2103.pdf
RS1MLWHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS1MLWHRVG RS1DLW%20SERIES_C2103.pdf
RS1MLWHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS2BAHR3G RS2AA%20SERIES_H2102.pdf
RS2BAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
RS2BAHR3G RS2AA%20SERIES_H2102.pdf
RS2BAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
RS2J R5G RS2A%20SERIES_K2102.pdf
RS2J R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
RS2J R5G RS2A%20SERIES_K2102.pdf
RS2J R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.25 EUR
25+ 1.08 EUR
100+ 0.75 EUR
Mindestbestellmenge: 21
RS2JA R3G RS2AA%20SERIES_H2102.pdf
RS2JA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
RS2JA R3G RS2AA%20SERIES_H2102.pdf
RS2JA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
RS2JAHR3G RS2AA%20SERIES_H2102.pdf
RS2JAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
RS2JAHR3G RS2AA%20SERIES_H2102.pdf
RS2JAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 329 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.25 EUR
25+ 1.06 EUR
100+ 0.74 EUR
Mindestbestellmenge: 21
RS2K R5G RS2A%20SERIES_K2102.pdf
RS2K R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
RS2K R5G RS2A%20SERIES_K2102.pdf
RS2K R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 721 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.27 EUR
24+ 1.09 EUR
100+ 0.76 EUR
Mindestbestellmenge: 21
RS2KA R3G RS2AA%20SERIES_H2102.pdf
RS2KA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
RS2KA R3G RS2AA%20SERIES_H2102.pdf
RS2KA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
RS2KAHR3G RS2AA%20SERIES_H2102.pdf
RS2KAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
RS2KAHR3G RS2AA%20SERIES_H2102.pdf
RS2KAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
RS2M R5G RS2A%20SERIES_K2102.pdf
RS2M R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS2M R5G RS2A%20SERIES_K2102.pdf
RS2M R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 32 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.27 EUR
24+ 1.09 EUR
Mindestbestellmenge: 21
RS2MA R3G RS2AA%20SERIES_H2102.pdf
RS2MA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS2MA R3G RS2AA%20SERIES_H2102.pdf
RS2MA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 526 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
29+ 0.93 EUR
100+ 0.64 EUR
500+ 0.5 EUR
Mindestbestellmenge: 24
RS2MAHR3G RS2AA%20SERIES_H2102.pdf
RS2MAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS2MAHR3G RS2AA%20SERIES_H2102.pdf
RS2MAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RSFGL R3G RSFAL%20SERIES_L15.pdf
RSFGL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFGL R3G RSFAL%20SERIES_L15.pdf
RSFGL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFGL RVG RSFAL%20SERIES_L15.pdf
RSFGL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFGL RVG RSFAL%20SERIES_L15.pdf
RSFGL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 500MA SUBSMA
auf Bestellung 2695 Stücke:
Lieferzeit 21-28 Tag (e)
RSFJL R3G RSFAL%20SERIES_L15.pdf
RSFJL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
auf Bestellung 1627 Stücke:
Lieferzeit 21-28 Tag (e)
S1A R3G S1A%20SERIES_R15.pdf
S1A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO214AC
Produkt ist nicht verfügbar
S1A R3G S1A%20SERIES_R15.pdf
S1A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO214AC
auf Bestellung 1294 Stücke:
Lieferzeit 21-28 Tag (e)
S1B R3G S1A%20SERIES_R15.pdf
S1B R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
auf Bestellung 15236 Stücke:
Lieferzeit 21-28 Tag (e)
S1D R3G S1A%20SERIES_R15.pdf
S1D R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
auf Bestellung 2442 Stücke:
Lieferzeit 21-28 Tag (e)
S1D R3G S1A%20SERIES_R15.pdf
S1D R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
auf Bestellung 1800 Stücke:
Lieferzeit 21-28 Tag (e)
S1D R3G S1A%20SERIES_R15.pdf
S1D R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
auf Bestellung 2442 Stücke:
Lieferzeit 21-28 Tag (e)
S1DL RVG S1AL%20SERIES_O15.pdf
S1DL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
S1DL RVG S1AL%20SERIES_O15.pdf
S1DL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
auf Bestellung 3857 Stücke:
Lieferzeit 21-28 Tag (e)
S1GL R3G S1xL_Rev.O15.pdf
S1GL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
auf Bestellung 1800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1800+0.45 EUR
Mindestbestellmenge: 1800
S1GL R3G S1xL_Rev.O15.pdf
S1GL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
auf Bestellung 2510 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.46 EUR
23+ 1.18 EUR
100+ 0.8 EUR
500+ 0.6 EUR
Mindestbestellmenge: 18
S1JLHRVG S1AL%20SERIES_O15.pdf
S1JLHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Produkt ist nicht verfügbar
S1JLHRVG S1AL%20SERIES_O15.pdf
S1JLHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
auf Bestellung 1008 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
20+1.3 EUR
28+ 0.96 EUR
100+ 0.54 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 20
S1JLSHRVG S1DLS%20SERIES_H2103.pdf
S1JLSHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
S1JLSHRVG S1DLS%20SERIES_H2103.pdf
S1JLSHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 8900 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.17 EUR
30+ 0.89 EUR
100+ 0.55 EUR
500+ 0.38 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 23
S1JM RSG S1GM%20SERIES_I2103.pdf
S1JM RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
S1JM RSG S1GM%20SERIES_I2103.pdf
S1JM RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 5253 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
28+ 0.94 EUR
100+ 0.7 EUR
500+ 0.55 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 24
S1KL R3G S1A%20SERIES_S2102.pdf
S1KL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SUB SMA
auf Bestellung 1800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1800+0.45 EUR
Mindestbestellmenge: 1800
S1KL R3G S1A%20SERIES_S2102.pdf
S1KL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SUB SMA
auf Bestellung 3012 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.14 EUR
27+ 0.98 EUR
100+ 0.73 EUR
500+ 0.58 EUR
Mindestbestellmenge: 23
S1KLSHRVG S1DLS%20SERIES_H2103.pdf
S1KLSHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
S1KLSHRVG S1DLS%20SERIES_H2103.pdf
S1KLSHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
S1M R3G S1A%20SERIES_S2102.pdf
S1M R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
S1ML R3G S1AL%20SERIES_O15.pdf
S1ML R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SUB SMA
auf Bestellung 1800 Stücke:
Lieferzeit 21-28 Tag (e)
S1ML R3G S1AL%20SERIES_O15.pdf
S1ML R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SUB SMA
auf Bestellung 1912 Stücke:
Lieferzeit 21-28 Tag (e)
S1MLHRVG S1AL%20SERIES_Q2108.pdf
S1MLHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SUB SMA
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.25 EUR
6000+ 0.23 EUR
Mindestbestellmenge: 3000
S1MLHRVG S1AL%20SERIES_Q2108.pdf
S1MLHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SUB SMA
auf Bestellung 9025 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
20+1.35 EUR
26+ 1 EUR
100+ 0.57 EUR
500+ 0.38 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 20
S1MLS RVG S1DLS%20SERIES_F1707.pdf
S1MLS RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.2A SOD123HE
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
S1MLS RVG S1DLS%20SERIES_F1707.pdf
S1MLS RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.2A SOD123HE
auf Bestellung 9556 Stücke:
Lieferzeit 21-28 Tag (e)
S1MLSHRVG S1DLS%20SERIES_F1707.pdf
S1MLSHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.2A SOD123HE
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
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