Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (22668) > Seite 12 nach 378
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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S1MLSHRVG | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 1KV 1.2A SOD123HE |
auf Bestellung 5935 Stücke: Lieferzeit 21-28 Tag (e) |
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S2A R5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 50V 2A DO214AA |
Produkt ist nicht verfügbar |
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S2A R5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 50V 2A DO214AA |
auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) |
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S2AA R3G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 50V 1.5A DO214AC |
Produkt ist nicht verfügbar |
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S2AA R3G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 50V 1.5A DO214AC |
Produkt ist nicht verfügbar |
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S2B R5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 2A DO214AA |
auf Bestellung 7650 Stücke: Lieferzeit 21-28 Tag (e) |
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S2B R5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 2A DO214AA |
auf Bestellung 7650 Stücke: Lieferzeit 21-28 Tag (e) |
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S2D R5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 2A DO214AA |
Produkt ist nicht verfügbar |
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S2D R5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 2A DO214AA |
Produkt ist nicht verfügbar |
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S2KA R3G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 1.5A DO214AC |
auf Bestellung 1800 Stücke: Lieferzeit 21-28 Tag (e) |
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S2KA R3G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 1.5A DO214AC |
auf Bestellung 3338 Stücke: Lieferzeit 21-28 Tag (e) |
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S2MA R3G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 1KV 1.5A DO214AC |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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S2MA R3G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 1KV 1.5A DO214AC |
auf Bestellung 11278 Stücke: Lieferzeit 21-28 Tag (e) |
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S3AB R5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 50V 3A DO214AA |
auf Bestellung 4250 Stücke: Lieferzeit 21-28 Tag (e) |
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S3AB R5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 50V 3A DO214AA |
auf Bestellung 4685 Stücke: Lieferzeit 21-28 Tag (e) |
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S3ABHR5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 50V 3A DO214AA |
auf Bestellung 850 Stücke: Lieferzeit 21-28 Tag (e) |
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S3ABHR5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 50V 3A DO214AA |
auf Bestellung 1690 Stücke: Lieferzeit 21-28 Tag (e) |
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S3BB R5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 3A DO214AA |
Produkt ist nicht verfügbar |
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S3BB R5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 3A DO214AA |
auf Bestellung 370 Stücke: Lieferzeit 21-28 Tag (e) |
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S3DB R5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 3A DO214AA |
Produkt ist nicht verfügbar |
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S3DB R5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 3A DO214AA |
Produkt ist nicht verfügbar |
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S3M R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
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S3M R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 40 Stücke: Lieferzeit 21-28 Tag (e) |
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S3MB R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
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S3MB R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 3A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 325 Stücke: Lieferzeit 21-28 Tag (e) |
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S3MBHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 4250 Stücke: Lieferzeit 21-28 Tag (e) |
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S3MBHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 3A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 4250 Stücke: Lieferzeit 21-28 Tag (e) |
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S5J R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 5A DO214AB |
auf Bestellung 1700 Stücke: Lieferzeit 21-28 Tag (e) |
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S5J R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 5A DO214AB |
auf Bestellung 1700 Stücke: Lieferzeit 21-28 Tag (e) |
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S5JB R5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 5A DO214AA |
auf Bestellung 2550 Stücke: Lieferzeit 21-28 Tag (e) |
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S5JB R5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 5A DO214AA |
auf Bestellung 3390 Stücke: Lieferzeit 21-28 Tag (e) |
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S5JBHR5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 5A DO214AA |
auf Bestellung 3400 Stücke: Lieferzeit 21-28 Tag (e) |
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S5JBHR5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 5A DO214AA |
auf Bestellung 4245 Stücke: Lieferzeit 21-28 Tag (e) |
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S5M R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 1KV 5A DO214AB |
auf Bestellung 850 Stücke: Lieferzeit 21-28 Tag (e) |
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S5M R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 1KV 5A DO214AB |
auf Bestellung 241 Stücke: Lieferzeit 21-28 Tag (e) |
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S5MB R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 5A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 71400 Stücke: Lieferzeit 21-28 Tag (e) |
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S5MB R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 5A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 72375 Stücke: Lieferzeit 21-28 Tag (e) |
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S8GC R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 8A DO214AB |
auf Bestellung 2550 Stücke: Lieferzeit 21-28 Tag (e) |
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S8GC R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 8A DO214AB |
auf Bestellung 3223 Stücke: Lieferzeit 21-28 Tag (e) |
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SA15CA A0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 15V 24.4V DO204AC |
auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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SA15CA A0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 15V 24.4V DO204AC |
auf Bestellung 2690 Stücke: Lieferzeit 21-28 Tag (e) |
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SBS25 REG | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 50V 2A ABS |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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SBS25 REG | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 50V 2A ABS |
auf Bestellung 2257 Stücke: Lieferzeit 21-28 Tag (e) |
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SF18G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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SF18G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 58 Stücke: Lieferzeit 21-28 Tag (e) |
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SF24G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2 Voltage Coupled to Current - Reverse Leakage @ Vr: 200 |
Produkt ist nicht verfügbar |
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SF24G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO204AC Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2 Voltage Coupled to Current - Reverse Leakage @ Vr: 200 |
auf Bestellung 37 Stücke: Lieferzeit 21-28 Tag (e) |
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SF26G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 2A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |
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SF26G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 2A DO204AC Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 98 Stücke: Lieferzeit 21-28 Tag (e) |
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SF28G A0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 2A DO204AC |
Produkt ist nicht verfügbar |
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SF28G A0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 2A DO204AC |
auf Bestellung 2047 Stücke: Lieferzeit 21-28 Tag (e) |
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SF3004PT C0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 30A TO247AD |
auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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SF3008PT C0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 30A TO247AD |
auf Bestellung 726 Stücke: Lieferzeit 21-28 Tag (e) |
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SF34G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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SF34G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 12 Stücke: Lieferzeit 21-28 Tag (e) |
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SF36G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |
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SF36G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |
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SF38G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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SF38G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 95 Stücke: Lieferzeit 21-28 Tag (e) |
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SF64G A0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 6A DO201AD |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
S1MLSHRVG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.2A SOD123HE
Description: DIODE GEN PURP 1KV 1.2A SOD123HE
auf Bestellung 5935 Stücke:
Lieferzeit 21-28 Tag (e)S2A R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Description: DIODE GEN PURP 50V 2A DO214AA
Produkt ist nicht verfügbar
S2A R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Description: DIODE GEN PURP 50V 2A DO214AA
auf Bestellung 25 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
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23+ | 1.14 EUR |
S2AA R3G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO214AC
Description: DIODE GEN PURP 50V 1.5A DO214AC
Produkt ist nicht verfügbar
S2AA R3G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO214AC
Description: DIODE GEN PURP 50V 1.5A DO214AC
Produkt ist nicht verfügbar
S2B R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO214AA
Description: DIODE GEN PURP 100V 2A DO214AA
auf Bestellung 7650 Stücke:
Lieferzeit 21-28 Tag (e)S2B R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO214AA
Description: DIODE GEN PURP 100V 2A DO214AA
auf Bestellung 7650 Stücke:
Lieferzeit 21-28 Tag (e)S2D R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Description: DIODE GEN PURP 200V 2A DO214AA
Produkt ist nicht verfügbar
S2D R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Description: DIODE GEN PURP 200V 2A DO214AA
Produkt ist nicht verfügbar
S2KA R3G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO214AC
Description: DIODE GEN PURP 800V 1.5A DO214AC
auf Bestellung 1800 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
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1800+ | 0.4 EUR |
S2KA R3G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO214AC
Description: DIODE GEN PURP 800V 1.5A DO214AC
auf Bestellung 3338 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 1.17 EUR |
28+ | 0.95 EUR |
100+ | 0.65 EUR |
500+ | 0.49 EUR |
S2MA R3G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.5A DO214AC
Description: DIODE GEN PURP 1KV 1.5A DO214AC
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)S2MA R3G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.5A DO214AC
Description: DIODE GEN PURP 1KV 1.5A DO214AC
auf Bestellung 11278 Stücke:
Lieferzeit 21-28 Tag (e)S3AB R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AA
Description: DIODE GEN PURP 50V 3A DO214AA
auf Bestellung 4250 Stücke:
Lieferzeit 21-28 Tag (e)S3AB R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AA
Description: DIODE GEN PURP 50V 3A DO214AA
auf Bestellung 4685 Stücke:
Lieferzeit 21-28 Tag (e)S3ABHR5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AA
Description: DIODE GEN PURP 50V 3A DO214AA
auf Bestellung 850 Stücke:
Lieferzeit 21-28 Tag (e)S3ABHR5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AA
Description: DIODE GEN PURP 50V 3A DO214AA
auf Bestellung 1690 Stücke:
Lieferzeit 21-28 Tag (e)S3BB R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AA
Description: DIODE GEN PURP 100V 3A DO214AA
Produkt ist nicht verfügbar
S3BB R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AA
Description: DIODE GEN PURP 100V 3A DO214AA
auf Bestellung 370 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.53 EUR |
20+ | 1.35 EUR |
100+ | 1.04 EUR |
S3DB R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AA
Description: DIODE GEN PURP 200V 3A DO214AA
Produkt ist nicht verfügbar
S3DB R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AA
Description: DIODE GEN PURP 200V 3A DO214AA
Produkt ist nicht verfügbar
S3M R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
S3M R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 40 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 1.22 EUR |
27+ | 0.99 EUR |
S3MB R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
S3MB R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 325 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 1.4 EUR |
22+ | 1.21 EUR |
100+ | 0.84 EUR |
S3MBHR5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 4250 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
850+ | 0.77 EUR |
1700+ | 0.65 EUR |
2550+ | 0.58 EUR |
S3MBHR5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 4250 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.53 EUR |
20+ | 1.33 EUR |
100+ | 0.92 EUR |
S5J R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 5A DO214AB
Description: DIODE GEN PURP 600V 5A DO214AB
auf Bestellung 1700 Stücke:
Lieferzeit 21-28 Tag (e)S5J R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 5A DO214AB
Description: DIODE GEN PURP 600V 5A DO214AB
auf Bestellung 1700 Stücke:
Lieferzeit 21-28 Tag (e)S5JB R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 5A DO214AA
Description: DIODE GEN PURP 600V 5A DO214AA
auf Bestellung 2550 Stücke:
Lieferzeit 21-28 Tag (e)S5JB R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 5A DO214AA
Description: DIODE GEN PURP 600V 5A DO214AA
auf Bestellung 3390 Stücke:
Lieferzeit 21-28 Tag (e)S5JBHR5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 5A DO214AA
Description: DIODE GEN PURP 600V 5A DO214AA
auf Bestellung 3400 Stücke:
Lieferzeit 21-28 Tag (e)S5JBHR5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 5A DO214AA
Description: DIODE GEN PURP 600V 5A DO214AA
auf Bestellung 4245 Stücke:
Lieferzeit 21-28 Tag (e)S5M R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 5A DO214AB
Description: DIODE GEN PURP 1KV 5A DO214AB
auf Bestellung 850 Stücke:
Lieferzeit 21-28 Tag (e)S5M R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 5A DO214AB
Description: DIODE GEN PURP 1KV 5A DO214AB
auf Bestellung 241 Stücke:
Lieferzeit 21-28 Tag (e)S5MB R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 71400 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
850+ | 0.61 EUR |
1700+ | 0.49 EUR |
2550+ | 0.44 EUR |
5950+ | 0.42 EUR |
21250+ | 0.39 EUR |
42500+ | 0.38 EUR |
S5MB R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 72375 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.3 EUR |
24+ | 1.12 EUR |
100+ | 0.78 EUR |
S8GC R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A DO214AB
Description: DIODE GEN PURP 400V 8A DO214AB
auf Bestellung 2550 Stücke:
Lieferzeit 21-28 Tag (e)S8GC R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A DO214AB
Description: DIODE GEN PURP 400V 8A DO214AB
auf Bestellung 3223 Stücke:
Lieferzeit 21-28 Tag (e)SA15CA A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15V 24.4V DO204AC
Description: TVS DIODE 15V 24.4V DO204AC
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)SA15CA A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15V 24.4V DO204AC
Description: TVS DIODE 15V 24.4V DO204AC
auf Bestellung 2690 Stücke:
Lieferzeit 21-28 Tag (e)SBS25 REG |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A ABS
Description: BRIDGE RECT 1PHASE 50V 2A ABS
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)SBS25 REG |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A ABS
Description: BRIDGE RECT 1PHASE 50V 2A ABS
auf Bestellung 2257 Stücke:
Lieferzeit 21-28 Tag (e)SF18G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
SF18G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 58 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.99 EUR |
37+ | 0.7 EUR |
SF24G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Produkt ist nicht verfügbar
SF24G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
auf Bestellung 37 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 1.09 EUR |
35+ | 0.76 EUR |
SF26G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
SF26G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 98 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 1.09 EUR |
35+ | 0.76 EUR |
SF28G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO204AC
Description: DIODE GEN PURP 600V 2A DO204AC
Produkt ist nicht verfügbar
SF28G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO204AC
Description: DIODE GEN PURP 600V 2A DO204AC
auf Bestellung 2047 Stücke:
Lieferzeit 21-28 Tag (e)SF3004PT C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 30A TO247AD
Description: DIODE GEN PURP 200V 30A TO247AD
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)SF3008PT C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 30A TO247AD
Description: DIODE GEN PURP 600V 30A TO247AD
auf Bestellung 726 Stücke:
Lieferzeit 21-28 Tag (e)SF34G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
SF34G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)SF36G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
SF36G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
SF38G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
SF38G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 95 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 1.43 EUR |
22+ | 1.23 EUR |
SF64G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 6A DO201AD
Description: DIODE GEN PURP 200V 6A DO201AD
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)