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S2D R5G S2D R5G Taiwan Semiconductor Corporation S2A%20SERIES_M1805.pdf Description: DIODE GEN PURP 200V 2A DO214AA
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S2D R5G S2D R5G Taiwan Semiconductor Corporation S2A%20SERIES_M1805.pdf Description: DIODE GEN PURP 200V 2A DO214AA
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S2KA R3G S2KA R3G Taiwan Semiconductor Corporation S2AA%20SERIES_K2102.pdf Description: DIODE GEN PURP 800V 1.5A DO214AC
auf Bestellung 1800 Stücke:
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1800+0.27 EUR
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S2KA R3G S2KA R3G Taiwan Semiconductor Corporation S2AA%20SERIES_K2102.pdf Description: DIODE GEN PURP 800V 1.5A DO214AC
auf Bestellung 3338 Stücke:
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23+0.79 EUR
28+0.64 EUR
100+0.44 EUR
500+0.33 EUR
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S2MA R3G S2MA R3G Taiwan Semiconductor Corporation S2AA%20SERIES_K2102.pdf Description: DIODE GEN PURP 1KV 1.5A DO214AC
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S2MA R3G S2MA R3G Taiwan Semiconductor Corporation S2AA%20SERIES_K2102.pdf Description: DIODE GEN PURP 1KV 1.5A DO214AC
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S3AB R5G S3AB R5G Taiwan Semiconductor Corporation S3AB%20SERIES_M2102.pdf Description: DIODE STANDARD 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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S3AB R5G S3AB R5G Taiwan Semiconductor Corporation S3AB%20SERIES_M2102.pdf Description: DIODE STANDARD 50V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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S3ABHR5G S3ABHR5G Taiwan Semiconductor Corporation S3AB%20SERIES_M2102.pdf Description: DIODE STANDARD 50V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 2597 Stücke:
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13+1.36 EUR
20+0.91 EUR
100+0.62 EUR
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S3BB R5G S3BB R5G Taiwan Semiconductor Corporation S3AB%20SERIES_L1705.pdf Description: DIODE GEN PURP 100V 3A DO214AA
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S3BB R5G S3BB R5G Taiwan Semiconductor Corporation S3AB%20SERIES_L1705.pdf Description: DIODE GEN PURP 100V 3A DO214AA
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17+1.04 EUR
20+0.92 EUR
100+0.7 EUR
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S3DB R5G S3DB R5G Taiwan Semiconductor Corporation S3AB%20SERIES_L1705.pdf Description: DIODE GEN PURP 200V 3A DO214AA
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S3DB R5G S3DB R5G Taiwan Semiconductor Corporation S3AB%20SERIES_L1705.pdf Description: DIODE GEN PURP 200V 3A DO214AA
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S3M R7G S3M R7G Taiwan Semiconductor Corporation S3A%20SERIES_O2301.pdf Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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S3M R7G S3M R7G Taiwan Semiconductor Corporation S3A%20SERIES_O2301.pdf Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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S3MB R5G S3MB R5G Taiwan Semiconductor Corporation S3AB%20SERIES_M2102.pdf Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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S3MB R5G S3MB R5G Taiwan Semiconductor Corporation S3AB%20SERIES_M2102.pdf Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 325 Stücke:
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14+1.27 EUR
21+0.84 EUR
100+0.58 EUR
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S3MBHR5G S3MBHR5G Taiwan Semiconductor Corporation S3AB%20SERIES_M2102.pdf Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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S3MBHR5G S3MBHR5G Taiwan Semiconductor Corporation S3AB%20SERIES_M2102.pdf Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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S5J R7G S5J R7G Taiwan Semiconductor Corporation S5A%20SERIES_D1708.pdf Description: DIODE GEN PURP 600V 5A DO214AB
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S5J R7G S5J R7G Taiwan Semiconductor Corporation S5A%20SERIES_D1708.pdf Description: DIODE GEN PURP 600V 5A DO214AB
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S5JB R5G S5JB R5G Taiwan Semiconductor Corporation S5GB%20SERIES_C1701.pdf Description: DIODE GEN PURP 600V 5A DO214AA
auf Bestellung 2550 Stücke:
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S5JB R5G S5JB R5G Taiwan Semiconductor Corporation S5GB%20SERIES_C1701.pdf Description: DIODE GEN PURP 600V 5A DO214AA
auf Bestellung 3390 Stücke:
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S5JBHR5G S5JBHR5G Taiwan Semiconductor Corporation S5GB%20SERIES_C1701.pdf Description: DIODE GEN PURP 600V 5A DO214AA
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S5JBHR5G S5JBHR5G Taiwan Semiconductor Corporation S5GB%20SERIES_C1701.pdf Description: DIODE GEN PURP 600V 5A DO214AA
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S5M R7G S5M R7G Taiwan Semiconductor Corporation S5A%20SERIES_D1708.pdf Description: DIODE GEN PURP 1KV 5A DO214AB
auf Bestellung 850 Stücke:
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S5M R7G S5M R7G Taiwan Semiconductor Corporation S5A%20SERIES_D1708.pdf Description: DIODE GEN PURP 1KV 5A DO214AB
auf Bestellung 241 Stücke:
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S5MB R5G S5MB R5G Taiwan Semiconductor Corporation S5GB%20SERIES_D2102.pdf Description: DIODE GEN PURP 1KV 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 69700 Stücke:
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850+0.4 EUR
1700+0.33 EUR
2550+0.29 EUR
5950+0.28 EUR
21250+0.26 EUR
42500+0.25 EUR
Mindestbestellmenge: 850
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S5MB R5G S5MB R5G Taiwan Semiconductor Corporation S5GB%20SERIES_D2102.pdf Description: DIODE GEN PURP 1KV 5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 70446 Stücke:
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14+1.32 EUR
22+0.82 EUR
100+0.53 EUR
Mindestbestellmenge: 14
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S8GC R7G S8GC R7G Taiwan Semiconductor Corporation S8GC%20SERIES_F2102.pdf Description: DIODE GEN PURP 400V 8A DO214AB
auf Bestellung 2550 Stücke:
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S8GC R7G S8GC R7G Taiwan Semiconductor Corporation S8GC%20SERIES_F2102.pdf Description: DIODE GEN PURP 400V 8A DO214AB
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SA15CA A0G SA15CA A0G Taiwan Semiconductor Corporation SA%20SERIES_K1602.pdf Description: TVS DIODE 15V 24.4V DO204AC
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SA15CA A0G SA15CA A0G Taiwan Semiconductor Corporation SA%20SERIES_K1602.pdf Description: TVS DIODE 15V 24.4V DO204AC
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SBS25 REG SBS25 REG Taiwan Semiconductor Corporation SBS24%20SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 50V 2A ABS
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SBS25 REG SBS25 REG Taiwan Semiconductor Corporation SBS24%20SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 50V 2A ABS
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SF18G A0G SF18G A0G Taiwan Semiconductor Corporation SF11G SERIES_H2104.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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SF18G A0G SF18G A0G Taiwan Semiconductor Corporation SF11G SERIES_H2104.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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SF24G A0G SF24G A0G Taiwan Semiconductor Corporation SF21G SERIES_H2105.pdf Description: DIODE STANDARD 200V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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SF24G A0G SF24G A0G Taiwan Semiconductor Corporation SF21G SERIES_H2105.pdf Description: DIODE STANDARD 200V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 37 Stücke:
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31+0.58 EUR
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SF26G A0G SF26G A0G Taiwan Semiconductor Corporation SF21G SERIES_H2105.pdf Description: DIODE STANDARD 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SF26G A0G SF26G A0G Taiwan Semiconductor Corporation SF21G SERIES_H2105.pdf Description: DIODE STANDARD 400V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 86 Stücke:
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25+0.7 EUR
40+0.44 EUR
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SF28G A0G SF28G A0G Taiwan Semiconductor Corporation SF21G%20SERIES_H2105.pdf Description: DIODE GEN PURP 600V 2A DO204AC
Produkt ist nicht verfügbar
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SF28G A0G SF28G A0G Taiwan Semiconductor Corporation SF21G%20SERIES_H2105.pdf Description: DIODE GEN PURP 600V 2A DO204AC
auf Bestellung 2047 Stücke:
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SF3004PT C0G SF3004PT C0G Taiwan Semiconductor Corporation SF3001PT%20SERIES_H15.pdf Description: DIODE GEN PURP 200V 30A TO247AD
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SF3008PT C0G SF3008PT C0G Taiwan Semiconductor Corporation SF3001PT%20SERIES_H15.pdf Description: DIODE GEN PURP 600V 30A TO247AD
auf Bestellung 726 Stücke:
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SF34G A0G SF34G A0G Taiwan Semiconductor Corporation pdf.php?pn=SF34G Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SF34G A0G SF34G A0G Taiwan Semiconductor Corporation pdf.php?pn=SF34G Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
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SF36G A0G SF36G A0G Taiwan Semiconductor Corporation SF31G SERIES_H2105.pdf Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SF36G A0G SF36G A0G Taiwan Semiconductor Corporation SF31G SERIES_H2105.pdf Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SF38G A0G SF38G A0G Taiwan Semiconductor Corporation SF31G SERIES_H2105.pdf Description: DIODE STANDARD 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SF38G A0G SF38G A0G Taiwan Semiconductor Corporation SF31G SERIES_H2105.pdf Description: DIODE STANDARD 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 3 Stücke:
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SF64G A0G SF64G A0G Taiwan Semiconductor Corporation SF61G%20SERIES_F1511.pdf Description: DIODE GEN PURP 200V 6A DO201AD
auf Bestellung 1000 Stücke:
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SF64G A0G SF64G A0G Taiwan Semiconductor Corporation SF61G%20SERIES_F1511.pdf Description: DIODE GEN PURP 200V 6A DO201AD
auf Bestellung 1328 Stücke:
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SF66G A0G SF66G A0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 6A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SF66G A0G SF66G A0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 6A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SF68G A0G SF68G A0G Taiwan Semiconductor Corporation SF61G%20SERIES_G2105.pdf Description: DIODE GEN PURP 600V 6A DO201AD
auf Bestellung 500 Stücke:
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SF68G A0G SF68G A0G Taiwan Semiconductor Corporation SF61G%20SERIES_G2105.pdf Description: DIODE GEN PURP 600V 6A DO201AD
auf Bestellung 1241 Stücke:
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SFAF1008G C0G SFAF1008G C0G Taiwan Semiconductor Corporation SFAF1001G%20SERIES_G1511.pdf Description: DIODE GEN PURP 600V 10A ITO220AC
auf Bestellung 4320 Stücke:
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SFAF508G C0G SFAF508G C0G Taiwan Semiconductor Corporation SFAF501G%20SERIES_H1512.pdf Description: DIODE GEN PURP 600V 5A ITO220AC
auf Bestellung 694 Stücke:
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SFF1006G C0G SFF1006G C0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_L14.pdf Description: DIODE GEN PURP 400V 10A ITO220AB
auf Bestellung 2364 Stücke:
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S2D R5G S2A%20SERIES_M1805.pdf
S2D R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S2D R5G S2A%20SERIES_M1805.pdf
S2D R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S2KA R3G S2AA%20SERIES_K2102.pdf
S2KA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO214AC
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.27 EUR
Mindestbestellmenge: 1800
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S2KA R3G S2AA%20SERIES_K2102.pdf
S2KA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO214AC
auf Bestellung 3338 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
28+0.64 EUR
100+0.44 EUR
500+0.33 EUR
Mindestbestellmenge: 23
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S2MA R3G S2AA%20SERIES_K2102.pdf
S2MA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.5A DO214AC
auf Bestellung 9000 Stücke:
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S2MA R3G S2AA%20SERIES_K2102.pdf
S2MA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.5A DO214AC
auf Bestellung 11278 Stücke:
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S3AB R5G S3AB%20SERIES_M2102.pdf
S3AB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S3AB R5G S3AB%20SERIES_M2102.pdf
S3AB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
21+0.84 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
S3ABHR5G S3AB%20SERIES_M2102.pdf
S3ABHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 2597 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
20+0.91 EUR
100+0.62 EUR
Mindestbestellmenge: 13
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S3BB R5G S3AB%20SERIES_L1705.pdf
S3BB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AA
Produkt ist nicht verfügbar
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S3BB R5G S3AB%20SERIES_L1705.pdf
S3BB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AA
auf Bestellung 370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
20+0.92 EUR
100+0.7 EUR
Mindestbestellmenge: 17
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S3DB R5G S3AB%20SERIES_L1705.pdf
S3DB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AA
Produkt ist nicht verfügbar
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S3DB R5G S3AB%20SERIES_L1705.pdf
S3DB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AA
Produkt ist nicht verfügbar
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S3M R7G S3A%20SERIES_O2301.pdf
S3M R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S3M R7G S3A%20SERIES_O2301.pdf
S3M R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
Mindestbestellmenge: 25
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S3MB R5G S3AB%20SERIES_M2102.pdf
S3MB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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S3MB R5G S3AB%20SERIES_M2102.pdf
S3MB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 325 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
21+0.84 EUR
100+0.58 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
S3MBHR5G S3AB%20SERIES_M2102.pdf
S3MBHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S3MBHR5G S3AB%20SERIES_M2102.pdf
S3MBHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S5J R7G S5A%20SERIES_D1708.pdf
S5J R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 5A DO214AB
auf Bestellung 1700 Stücke:
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S5J R7G S5A%20SERIES_D1708.pdf
S5J R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 5A DO214AB
auf Bestellung 1700 Stücke:
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S5JB R5G S5GB%20SERIES_C1701.pdf
S5JB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 5A DO214AA
auf Bestellung 2550 Stücke:
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S5JB R5G S5GB%20SERIES_C1701.pdf
S5JB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 5A DO214AA
auf Bestellung 3390 Stücke:
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S5JBHR5G S5GB%20SERIES_C1701.pdf
S5JBHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 5A DO214AA
auf Bestellung 3400 Stücke:
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S5JBHR5G S5GB%20SERIES_C1701.pdf
S5JBHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 5A DO214AA
auf Bestellung 4245 Stücke:
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S5M R7G S5A%20SERIES_D1708.pdf
S5M R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 5A DO214AB
auf Bestellung 850 Stücke:
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S5M R7G S5A%20SERIES_D1708.pdf
S5M R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 5A DO214AB
auf Bestellung 241 Stücke:
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S5MB R5G S5GB%20SERIES_D2102.pdf
S5MB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 69700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
850+0.4 EUR
1700+0.33 EUR
2550+0.29 EUR
5950+0.28 EUR
21250+0.26 EUR
42500+0.25 EUR
Mindestbestellmenge: 850
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S5MB R5G S5GB%20SERIES_D2102.pdf
S5MB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 70446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
22+0.82 EUR
100+0.53 EUR
Mindestbestellmenge: 14
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S8GC R7G S8GC%20SERIES_F2102.pdf
S8GC R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A DO214AB
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S8GC R7G S8GC%20SERIES_F2102.pdf
S8GC R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A DO214AB
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SA15CA A0G SA%20SERIES_K1602.pdf
SA15CA A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15V 24.4V DO204AC
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SA15CA A0G SA%20SERIES_K1602.pdf
SA15CA A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15V 24.4V DO204AC
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SBS25 REG SBS24%20SERIES_C2103.pdf
SBS25 REG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A ABS
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SBS25 REG SBS24%20SERIES_C2103.pdf
SBS25 REG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A ABS
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SF18G A0G SF11G SERIES_H2104.pdf
SF18G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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SF18G A0G SF11G SERIES_H2104.pdf
SF18G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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SF24G A0G SF21G SERIES_H2105.pdf
SF24G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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SF24G A0G SF21G SERIES_H2105.pdf
SF24G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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Anzahl Preis
31+0.58 EUR
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SF26G A0G SF21G SERIES_H2105.pdf
SF26G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SF26G A0G SF21G SERIES_H2105.pdf
SF26G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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Anzahl Preis
25+0.7 EUR
40+0.44 EUR
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SF28G A0G SF21G%20SERIES_H2105.pdf
SF28G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO204AC
Produkt ist nicht verfügbar
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SF28G A0G SF21G%20SERIES_H2105.pdf
SF28G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO204AC
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SF3004PT C0G SF3001PT%20SERIES_H15.pdf
SF3004PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 30A TO247AD
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SF3008PT C0G SF3001PT%20SERIES_H15.pdf
SF3008PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 30A TO247AD
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SF34G A0G pdf.php?pn=SF34G
SF34G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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SF34G A0G pdf.php?pn=SF34G
SF34G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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SF36G A0G SF31G SERIES_H2105.pdf
SF36G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SF36G A0G SF31G SERIES_H2105.pdf
SF36G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SF38G A0G SF31G SERIES_H2105.pdf
SF38G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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SF38G A0G SF31G SERIES_H2105.pdf
SF38G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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SF64G A0G SF61G%20SERIES_F1511.pdf
SF64G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 6A DO201AD
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SF64G A0G SF61G%20SERIES_F1511.pdf
SF64G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 6A DO201AD
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SF66G A0G
SF66G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 6A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SF66G A0G
SF66G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 6A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SF68G A0G SF61G%20SERIES_G2105.pdf
SF68G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A DO201AD
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SF68G A0G SF61G%20SERIES_G2105.pdf
SF68G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A DO201AD
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SFAF1008G C0G SFAF1001G%20SERIES_G1511.pdf
SFAF1008G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A ITO220AC
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SFAF508G C0G SFAF501G%20SERIES_H1512.pdf
SFAF508G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 5A ITO220AC
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SFF1006G C0G SFF1001G%20SERIES_L14.pdf
SFF1006G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 10A ITO220AB
auf Bestellung 2364 Stücke:
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