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FR105G A0G FR105G A0G Taiwan Semiconductor Corporation FR101G SERIES_H2104.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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FR157G A0G FR157G A0G Taiwan Semiconductor Corporation FR151G%20SERIES_I2105.pdf Description: DIODE GEN PURP 1KV 1.5A DO204AC
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FR157G A0G FR157G A0G Taiwan Semiconductor Corporation FR151G%20SERIES_I2105.pdf Description: DIODE GEN PURP 1KV 1.5A DO204AC
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GBL06 D2G GBL06 D2G Taiwan Semiconductor Corporation GBL005%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 600V 4A GBL
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GBL08 D2G GBL08 D2G Taiwan Semiconductor Corporation GBL005%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 800V 4A GBL
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GBL205 D2G GBL205 D2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 600V 2A GBL
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GBU1006 D2G GBU1006 D2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 800V 10A GBU
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GBU1007 D2G GBU1007 D2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 1KV 10A GBU
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GBU405 D2G GBU405 D2G Taiwan Semiconductor Corporation GBU401%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 600V 4A GBU
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GBU406 D2G GBU406 D2G Taiwan Semiconductor Corporation GBU401%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 800V 4A GBU
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GBU407 D2G GBU407 D2G Taiwan Semiconductor Corporation GBU401%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBU
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GBU605 D2G GBU605 D2G Taiwan Semiconductor Corporation GBU601%20SERIES_L1705.pdf Description: BRIDGE RECT 1PHASE 600V 6A GBU
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GBU606 D2G GBU606 D2G Taiwan Semiconductor Corporation GBU601%20SERIES_L1705.pdf Description: BRIDGE RECT 1PHASE 800V 6A GBU
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GBU607 D2G GBU607 D2G Taiwan Semiconductor Corporation GBU601%20SERIES_L1705.pdf Description: BRIDGE RECT 1PHASE 1KV 6A GBU
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GBU805 D2G GBU805 D2G Taiwan Semiconductor Corporation GBU801%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 600V 8A GBU
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GBU807 D2G GBU807 D2G Taiwan Semiconductor Corporation GBU801%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 1KV 8A GBU
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HDBLS103G RDG HDBLS103G RDG Taiwan Semiconductor Corporation HDBLS101G%20SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 200V 1A DBLS
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HDBLS103G RDG HDBLS103G RDG Taiwan Semiconductor Corporation HDBLS101G%20SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 200V 1A DBLS
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HER102G A0G HER102G A0G Taiwan Semiconductor Corporation HER101G SERIES_L2104.pdf Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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HER102G A0G HER102G A0G Taiwan Semiconductor Corporation HER101G SERIES_L2104.pdf Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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HER106G A0G HER106G A0G Taiwan Semiconductor Corporation HER101G SERIES_L2104.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HER106G A0G HER106G A0G Taiwan Semiconductor Corporation HER101G SERIES_L2104.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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100+0.3 EUR
500+0.23 EUR
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HER108G A0G HER108G A0G Taiwan Semiconductor Corporation HER101G SERIES_L2104.pdf Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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HER108G A0G HER108G A0G Taiwan Semiconductor Corporation HER101G SERIES_L2104.pdf Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 3685 Stücke:
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100+0.3 EUR
500+0.23 EUR
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HER203G A0G HER203G A0G Taiwan Semiconductor Corporation HER201G SERIES_G2105.pdf Description: DIODE STANDARD 200V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 6000 Stücke:
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1500+0.21 EUR
3000+0.19 EUR
4500+0.18 EUR
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HER203G A0G HER203G A0G Taiwan Semiconductor Corporation HER201G SERIES_G2105.pdf Description: DIODE STANDARD 200V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 801 Stücke:
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36+0.58 EUR
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HER208G A0G HER208G A0G Taiwan Semiconductor Corporation HER201G SERIES_G2105.pdf Description: DIODE STANDARD 1000V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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1500+0.21 EUR
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HER208G A0G HER208G A0G Taiwan Semiconductor Corporation HER201G SERIES_G2105.pdf Description: DIODE STANDARD 1000V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HER305G A0G HER305G A0G Taiwan Semiconductor Corporation HER301G SERIES_I2105.pdf Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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HER305G A0G HER305G A0G Taiwan Semiconductor Corporation HER301G SERIES_I2105.pdf Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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HS1D R3G HS1D R3G Taiwan Semiconductor Corporation HS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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HS1D R3G HS1D R3G Taiwan Semiconductor Corporation HS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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500+0.56 EUR
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HS1GL RVG HS1GL RVG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE STANDARD 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GL RVG HS1GL RVG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE STANDARD 400V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1J R3G HS1J R3G Taiwan Semiconductor Corporation HS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HS1J R3G HS1J R3G Taiwan Semiconductor Corporation HS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HS1K R3G HS1K R3G Taiwan Semiconductor Corporation HS1A%20SERIES_M2401.pdf Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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HS1KL R3G HS1KL R3G Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE STANDARD 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3600 Stücke
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HS1KL RVG HS1KL RVG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE STANDARD 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12000 Stücke
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HS1KLW RVG HS1KLW RVG Taiwan Semiconductor Corporation HS1DLWSERIESC2103.pdf Description: DIODE STANDARD 800V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12000 Stücke
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HS1M R3G HS1M R3G Taiwan Semiconductor Corporation HS1A%20SERIES_M2401.pdf Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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HS1ML R3G HS1ML R3G Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 1KV 1A SUB SMA
Produkt ist nicht verfügbar
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HS1ML R3G HS1ML R3G Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 1KV 1A SUB SMA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS1ML RVG HS1ML RVG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE STANDARD 1000V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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HS1MLW RVG HS1MLW RVG Taiwan Semiconductor Corporation HS1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 1KV 1A SOD123W
Produkt ist nicht verfügbar
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HS1MLW RVG HS1MLW RVG Taiwan Semiconductor Corporation HS1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 1KV 1A SOD123W
Produkt ist nicht verfügbar
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HS2K R5G HS2K R5G Taiwan Semiconductor Corporation HS2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 800V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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850+0.58 EUR
1700+0.48 EUR
2550+0.43 EUR
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HS2K R5G HS2K R5G Taiwan Semiconductor Corporation HS2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 800V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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17+1.27 EUR
20+1.08 EUR
100+0.75 EUR
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HS2KA R3G HS2KA R3G Taiwan Semiconductor Corporation HS2AA%20SERIES_J2102.pdf Description: DIODE GEN PURP 800V 1.5A DO214AC
Produkt ist nicht verfügbar
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HS2KA R3G HS2KA R3G Taiwan Semiconductor Corporation HS2AA%20SERIES_J2102.pdf Description: DIODE GEN PURP 800V 1.5A DO214AC
Produkt ist nicht verfügbar
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HS2M R5G HS2M R5G Taiwan Semiconductor Corporation HS2A%20SERIES_L2102.pdf Description: DIODE STANDARD 1000V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2MA R3G HS2MA R3G Taiwan Semiconductor Corporation HS2AA SERIES_J2102.pdf Description: DIODE STD 1000V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2MA R3G HS2MA R3G Taiwan Semiconductor Corporation HS2AA SERIES_J2102.pdf Description: DIODE STD 1000V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 1046 Stücke:
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20+1.09 EUR
31+0.68 EUR
100+0.44 EUR
500+0.33 EUR
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HS3BB R5G HS3BB R5G Taiwan Semiconductor Corporation HS3AB%20SERIES_L2102.pdf Description: DIODE GEN PURP 100V 3A DO214AA
Produkt ist nicht verfügbar
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HS3BB R5G HS3BB R5G Taiwan Semiconductor Corporation HS3AB%20SERIES_L2102.pdf Description: DIODE GEN PURP 100V 3A DO214AA
Produkt ist nicht verfügbar
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HS3DB R5G HS3DB R5G Taiwan Semiconductor Corporation HS3AB%20SERIES_L2102.pdf Description: DIODE GEN PURP 200V 3A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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HS3DB R5G HS3DB R5G Taiwan Semiconductor Corporation HS3AB%20SERIES_L2102.pdf Description: DIODE GEN PURP 200V 3A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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HS3JB R5G HS3JB R5G Taiwan Semiconductor Corporation HS3AB%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 3A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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850+0.88 EUR
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HS3JB R5G HS3JB R5G Taiwan Semiconductor Corporation HS3AB%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 3A DO214AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
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13+1.65 EUR
15+1.45 EUR
100+1.11 EUR
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HS3M R7G HS3M R7G Taiwan Semiconductor Corporation HS3A%20SERIES_K2102.pdf Description: DIODE GEN PURP 1KV 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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FR105G A0G FR101G SERIES_H2104.pdf
FR105G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 2990 Stücke:
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39+0.55 EUR
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100+0.21 EUR
500+0.15 EUR
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FR157G A0G FR151G%20SERIES_I2105.pdf
FR157G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.5A DO204AC
Produkt ist nicht verfügbar
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FR157G A0G FR151G%20SERIES_I2105.pdf
FR157G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.5A DO204AC
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GBL06 D2G GBL005%20SERIES_J15.pdf
GBL06 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 4A GBL
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10+2.24 EUR
11+2 EUR
100+1.56 EUR
500+1.29 EUR
1000+1.02 EUR
2000+0.95 EUR
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GBL08 D2G GBL005%20SERIES_K2103.pdf
GBL08 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 4A GBL
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GBL205 D2G GBL201%20SERIES_J2103.pdf
GBL205 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A GBL
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GBU1006 D2G GBU1001%20SERIES_K1705.pdf
GBU1006 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 10A GBU
Produkt ist nicht verfügbar
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GBU1007 D2G GBU1001%20SERIES_K1705.pdf
GBU1007 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 10A GBU
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GBU405 D2G GBU401%20SERIES_K1705.pdf
GBU405 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 4A GBU
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GBU406 D2G GBU401%20SERIES_K1705.pdf
GBU406 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 4A GBU
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10+2.15 EUR
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GBU407 D2G GBU401%20SERIES_K1705.pdf
GBU407 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
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GBU605 D2G GBU601%20SERIES_L1705.pdf
GBU605 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A GBU
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GBU606 D2G GBU601%20SERIES_L1705.pdf
GBU606 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 6A GBU
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GBU607 D2G GBU601%20SERIES_L1705.pdf
GBU607 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 6A GBU
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GBU805 D2G GBU801%20SERIES_K1705.pdf
GBU805 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 8A GBU
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GBU807 D2G GBU801%20SERIES_K1705.pdf
GBU807 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 8A GBU
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HDBLS103G RDG HDBLS101G%20SERIES_G2103.pdf
HDBLS103G RDG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 1A DBLS
Produkt ist nicht verfügbar
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HDBLS103G RDG HDBLS101G%20SERIES_G2103.pdf
HDBLS103G RDG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 1A DBLS
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HER102G A0G HER101G SERIES_L2104.pdf
HER102G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 6000 Stücke:
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3000+0.17 EUR
6000+0.15 EUR
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HER102G A0G HER101G SERIES_L2104.pdf
HER102G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 980 Stücke:
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HER106G A0G HER101G SERIES_L2104.pdf
HER106G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HER106G A0G HER101G SERIES_L2104.pdf
HER106G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 2364 Stücke:
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44+0.48 EUR
100+0.3 EUR
500+0.23 EUR
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HER108G A0G HER101G SERIES_L2104.pdf
HER108G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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HER108G A0G HER101G SERIES_L2104.pdf
HER108G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 3685 Stücke:
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28+0.77 EUR
44+0.48 EUR
100+0.3 EUR
500+0.23 EUR
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HER203G A0G HER201G SERIES_G2105.pdf
HER203G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
1500+0.21 EUR
3000+0.19 EUR
4500+0.18 EUR
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HER203G A0G HER201G SERIES_G2105.pdf
HER203G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 801 Stücke:
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23+0.94 EUR
36+0.58 EUR
100+0.37 EUR
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HER208G A0G HER201G SERIES_G2105.pdf
HER208G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 1500 Stücke:
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1500+0.21 EUR
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HER208G A0G HER201G SERIES_G2105.pdf
HER208G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 2036 Stücke:
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23+0.94 EUR
36+0.58 EUR
100+0.37 EUR
500+0.27 EUR
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HER305G A0G HER301G SERIES_I2105.pdf
HER305G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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HER305G A0G HER301G SERIES_I2105.pdf
HER305G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 431 Stücke:
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AnzahlPrivatkunde
18+1.19 EUR
28+0.77 EUR
100+0.61 EUR
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HS1D R3G HS1A%20SERIES_L2102.pdf
HS1D R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 1800 Stücke:
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AnzahlPrivatkunde
1800+0.44 EUR
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HS1D R3G HS1A%20SERIES_L2102.pdf
HS1D R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 4202 Stücke:
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19+1.11 EUR
22+0.96 EUR
100+0.71 EUR
500+0.56 EUR
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HS1GL RVG HS1AL%20SERIES_C2103.pdf
HS1GL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GL RVG HS1AL%20SERIES_C2103.pdf
HS1GL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1J R3G HS1A%20SERIES_L2102.pdf
HS1J R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HS1J R3G HS1A%20SERIES_L2102.pdf
HS1J R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HS1K R3G HS1A%20SERIES_M2401.pdf
HS1K R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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HS1KL R3G HS1AL%20SERIES_C2103.pdf
HS1KL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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HS1KL RVG HS1AL%20SERIES_C2103.pdf
HS1KL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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HS1KLW RVG HS1DLWSERIESC2103.pdf
HS1KLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
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HS1M R3G HS1A%20SERIES_M2401.pdf
HS1M R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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HS1ML R3G HS1AL%20SERIES_C2103.pdf
HS1ML R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SUB SMA
Produkt ist nicht verfügbar
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HS1ML R3G HS1AL%20SERIES_C2103.pdf
HS1ML R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SUB SMA
Produkt ist nicht verfügbar
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HS1ML RVG HS1AL%20SERIES_C2103.pdf
HS1ML RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
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HS1MLW RVG HS1DLW%20SERIES_C2103.pdf
HS1MLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SOD123W
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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HS1MLW RVG HS1DLW%20SERIES_C2103.pdf
HS1MLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SOD123W
Produkt ist nicht verfügbar
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HS2K R5G HS2A%20SERIES_L2102.pdf
HS2K R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 3400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
850+0.58 EUR
1700+0.48 EUR
2550+0.43 EUR
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HS2K R5G HS2A%20SERIES_L2102.pdf
HS2K R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 4036 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.27 EUR
20+1.08 EUR
100+0.75 EUR
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HS2KA R3G HS2AA%20SERIES_J2102.pdf
HS2KA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO214AC
Produkt ist nicht verfügbar
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HS2KA R3G HS2AA%20SERIES_J2102.pdf
HS2KA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO214AC
Produkt ist nicht verfügbar
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HS2M R5G HS2A%20SERIES_L2102.pdf
HS2M R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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HS2MA R3G HS2AA SERIES_J2102.pdf
HS2MA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 1000V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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HS2MA R3G HS2AA SERIES_J2102.pdf
HS2MA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 1000V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 1046 Stücke:
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AnzahlPrivatkunde
20+1.09 EUR
31+0.68 EUR
100+0.44 EUR
500+0.33 EUR
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HS3BB R5G HS3AB%20SERIES_L2102.pdf
HS3BB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AA
Produkt ist nicht verfügbar
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HS3BB R5G HS3AB%20SERIES_L2102.pdf
HS3BB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AA
Produkt ist nicht verfügbar
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HS3DB R5G HS3AB%20SERIES_L2102.pdf
HS3DB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 850 Stücke:
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AnzahlPrivatkunde
850+0.64 EUR
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HS3DB R5G HS3AB%20SERIES_L2102.pdf
HS3DB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 1349 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.87 EUR
17+1.25 EUR
100+0.86 EUR
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HS3JB R5G HS3AB%20SERIES_L2102.pdf
HS3JB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
850+0.88 EUR
1700+0.7 EUR
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HS3JB R5G HS3AB%20SERIES_L2102.pdf
HS3JB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
auf Bestellung 2048 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.65 EUR
15+1.45 EUR
100+1.11 EUR
Mindestbestellmenge: 13 Stücke
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HS3M R7G HS3A%20SERIES_K2102.pdf
HS3M R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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