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BAS316WS RRG BAS316WS RRG Taiwan Semiconductor Corporation BAS316WS_F2212.pdf Description: DIODE STD 100V 250MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
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BAS316WS RRG BAS316WS RRG Taiwan Semiconductor Corporation BAS316WS_F2212.pdf Description: DIODE STD 100V 250MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
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BAS85 L1G BAS85 L1G Taiwan Semiconductor Corporation BAS85.pdf Description: DIODE SCHOTT 30V 200MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Produkt ist nicht verfügbar
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BAT42W RHG BAT42W RHG Taiwan Semiconductor Corporation BAT42W SERIES_G1605.pdf Description: DIODE SCHOTTKY 30V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BAT42W RHG BAT42W RHG Taiwan Semiconductor Corporation BAT42W SERIES_G1605.pdf Description: DIODE SCHOTTKY 30V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BAT42WS RRG BAT42WS RRG Taiwan Semiconductor Corporation BAT42WS SERIES_I2212.pdf Description: DIODE SCHOTTKY 30V 200MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BAT42WS RRG BAT42WS RRG Taiwan Semiconductor Corporation BAT42WS SERIES_I2212.pdf Description: DIODE SCHOTTKY 30V 200MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BAT54A RFG BAT54A RFG Taiwan Semiconductor Corporation BAT54 SERIES_G2007.pdf Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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BAT54A RFG BAT54A RFG Taiwan Semiconductor Corporation BAT54 SERIES_G2007.pdf Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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BAT54C RFG BAT54C RFG Taiwan Semiconductor Corporation BAT54 SERIES_G2007.pdf Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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BAT54C RFG BAT54C RFG Taiwan Semiconductor Corporation BAT54 SERIES_G2007.pdf Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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BAT54S RFG BAT54S RFG Taiwan Semiconductor Corporation BAT54 SERIES_G2007.pdf Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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BAT54S RFG BAT54S RFG Taiwan Semiconductor Corporation BAT54 SERIES_G2007.pdf Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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BAV21W RHG BAV21W RHG Taiwan Semiconductor Corporation BAV19W SERIES_E15.pdf Description: DIODE STD 250V 200MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar
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BAV21W RHG BAV21W RHG Taiwan Semiconductor Corporation BAV19W SERIES_E15.pdf Description: DIODE STD 250V 200MA SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
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BAV21WS RRG BAV21WS RRG Taiwan Semiconductor Corporation BAV19WS SERIES_K2212.pdf Description: DIODE STD 250V 200MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar
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BC847B RFG BC847B RFG Taiwan Semiconductor Corporation BC846A Series_I2001.pdf Description: TRANS NPN 45V 0.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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BC847B RFG BC847B RFG Taiwan Semiconductor Corporation BC846A Series_I2001.pdf Description: TRANS NPN 45V 0.1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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BYG20D R3G Taiwan Semiconductor Corporation Description: DIODE STANDARD 200V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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BYG20G R3G Taiwan Semiconductor Corporation Description: DIODE STANDARD 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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BYG20G R3G Taiwan Semiconductor Corporation Description: DIODE STANDARD 400V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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BYG20J R3G Taiwan Semiconductor Corporation Description: DIODE STANDARD 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
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BYG21M R3G BYG21M R3G Taiwan Semiconductor Corporation Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
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BYG21M R3G BYG21M R3G Taiwan Semiconductor Corporation Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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BYG21MHR3G BYG21MHR3G Taiwan Semiconductor Corporation Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
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BYG21MHR3G BYG21MHR3G Taiwan Semiconductor Corporation Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 983 Stücke:
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18+1.19 EUR
29+0.74 EUR
100+0.48 EUR
500+0.36 EUR
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BZD17C15P R3G BZD17C15P R3G Taiwan Semiconductor Corporation BZD17C%20SERIES_L2103.pdf Description: DIODE ZENER 15V 800MW SUB SMA
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1800+0.56 EUR
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BZD17C15P R3G BZD17C15P R3G Taiwan Semiconductor Corporation BZD17C%20SERIES_L2103.pdf Description: DIODE ZENER 15V 800MW SUB SMA
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20+1.06 EUR
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500+0.64 EUR
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BZD27C100P R3G BZD27C100P R3G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 100V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 2360 Stücke:
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BZD27C100P R3G BZD27C100P R3G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 100V 1W SUB SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 3007 Stücke:
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BZD27C100P RVG BZD27C100P RVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 100V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
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BZD27C100P RVG BZD27C100P RVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 100V 1W SUB SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 1028 Stücke:
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20+1.09 EUR
32+0.67 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
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BZD27C12P R3G BZD27C12P R3G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 12.05V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Produkt ist nicht verfügbar
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BZD27C12P R3G BZD27C12P R3G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 12.05V 1W SUB SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
auf Bestellung 244 Stücke:
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17+1.24 EUR
20+1.09 EUR
100+0.83 EUR
Mindestbestellmenge: 17 Stücke
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BZD27C13P RVG BZD27C13P RVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12000 Stücke
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BZD27C13P RVG BZD27C13P RVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
auf Bestellung 10 Stücke:
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BZD27C15P RVG BZD27C15P RVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C15P RVG BZD27C15P RVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
auf Bestellung 532 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.75 EUR
42+0.5 EUR
100+0.35 EUR
500+0.26 EUR
Mindestbestellmenge: 28 Stücke
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BZD27C200P RVG BZD27C200P RVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 200V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12000 Stücke
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BZD27C200P RVG BZD27C200P RVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 200V 1W SUB SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C22P R3G BZD27C22P R3G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 22.05V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22.05 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.21 EUR
Mindestbestellmenge: 1800 Stücke
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BZD27C22P R3G BZD27C22P R3G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 22.05V 1W SUB SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22.05 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
auf Bestellung 2761 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.49 EUR
21+1 EUR
100+0.69 EUR
500+0.55 EUR
Mindestbestellmenge: 15 Stücke
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BZD27C33P RVG BZD27C33P RVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 33V 1W SUB SMA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.24 EUR
6000+0.23 EUR
Mindestbestellmenge: 3000 Stücke
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BZD27C33P RVG BZD27C33P RVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 33V 1W SUB SMA
auf Bestellung 7771 Stücke:
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25+0.86 EUR
31+0.69 EUR
100+0.48 EUR
500+0.36 EUR
1000+0.26 EUR
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BZD27C36P R3G BZD27C36P R3G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 36V 1W SUB SMA
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BZD27C36P R3G BZD27C36P R3G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 36V 1W SUB SMA
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BZD27C43P RVG BZD27C43P RVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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BZD27C43P RVG BZD27C43P RVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C51P RVG BZD27C51P RVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.23 EUR
6000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
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BZD27C51P RVG BZD27C51P RVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
auf Bestellung 12007 Stücke:
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26+0.82 EUR
33+0.65 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.25 EUR
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BZT52B10 RHG BZT52B10 RHG Taiwan Semiconductor Corporation Description: DIODE ZENER 10V 500MW SOD123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 180 nA @ 7 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.087 EUR
6000+0.08 EUR
9000+0.067 EUR
Mindestbestellmenge: 3000 Stücke
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BZT52B10 RHG BZT52B10 RHG Taiwan Semiconductor Corporation Description: DIODE ZENER 10V 500MW SOD123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 180 nA @ 7 V
auf Bestellung 16730 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.52 EUR
60+0.36 EUR
122+0.17 EUR
500+0.14 EUR
1000+0.1 EUR
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BZT52B12 RHG BZT52B12 RHG Taiwan Semiconductor Corporation BZT52B2V4 series_F15.pdf Description: DIODE ZENER 12V 500MW SOD123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.074 EUR
6000+0.065 EUR
Mindestbestellmenge: 3000 Stücke
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BZT52B12 RHG BZT52B12 RHG Taiwan Semiconductor Corporation BZT52B2V4 series_F15.pdf Description: DIODE ZENER 12V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
auf Bestellung 6638 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.38 EUR
94+0.23 EUR
151+0.14 EUR
500+0.1 EUR
1000+0.089 EUR
Mindestbestellmenge: 56 Stücke
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BZT52B15 RHG BZT52B15 RHG Taiwan Semiconductor Corporation BZT52B2V4 series_F15.pdf Description: DIODE ZENER 15V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 10.5 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.074 EUR
6000+0.065 EUR
Mindestbestellmenge: 3000 Stücke
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BZT52B15 RHG BZT52B15 RHG Taiwan Semiconductor Corporation BZT52B2V4 series_F15.pdf Description: DIODE ZENER 15V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 10.5 V
auf Bestellung 7821 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.38 EUR
94+0.23 EUR
151+0.14 EUR
500+0.1 EUR
1000+0.089 EUR
Mindestbestellmenge: 56 Stücke
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BZT52B18 RHG BZT52B18 RHG Taiwan Semiconductor Corporation BZT52B2V4 series_F15.pdf Description: DIODE ZENER 18V 500MW SOD123F
Current - Reverse Leakage @ Vr: 45 nA @ 12.6 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123F
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.054 EUR
6000+0.05 EUR
9000+0.043 EUR
Mindestbestellmenge: 3000 Stücke
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BZT52B18 RHG BZT52B18 RHG Taiwan Semiconductor Corporation BZT52B2V4 series_F15.pdf Description: DIODE ZENER 18V 500MW SOD123F
Current - Reverse Leakage @ Vr: 45 nA @ 12.6 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123F
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 22529 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.31 EUR
97+0.21 EUR
197+0.11 EUR
500+0.089 EUR
1000+0.062 EUR
Mindestbestellmenge: 67 Stücke
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BZT52B2V4 RHG BZT52B2V4 RHG Taiwan Semiconductor Corporation BZT52B2V4 series_F15.pdf Description: DIODE ZENER 2.4V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 µA @ 1 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZT52B2V4 RHG BZT52B2V4 RHG Taiwan Semiconductor Corporation BZT52B2V4 series_F15.pdf Description: DIODE ZENER 2.4V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 µA @ 1 V
auf Bestellung 1486 Stücke:
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95+0.23 EUR
152+0.14 EUR
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BAS316WS RRG BAS316WS_F2212.pdf
BAS316WS RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 100V 250MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
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BAS316WS RRG BAS316WS_F2212.pdf
BAS316WS RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 100V 250MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
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BAS85 L1G BAS85.pdf
BAS85 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTT 30V 200MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Produkt ist nicht verfügbar
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BAT42W RHG BAT42W SERIES_G1605.pdf
BAT42W RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
auf Bestellung 15000 Stücke:
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3000+0.063 EUR
6000+0.056 EUR
9000+0.052 EUR
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BAT42W RHG BAT42W SERIES_G1605.pdf
BAT42W RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
auf Bestellung 17578 Stücke:
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67+0.31 EUR
108+0.19 EUR
174+0.12 EUR
500+0.087 EUR
1000+0.076 EUR
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BAT42WS RRG BAT42WS SERIES_I2212.pdf
BAT42WS RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
auf Bestellung 6000 Stücke:
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3000+0.095 EUR
6000+0.086 EUR
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BAT42WS RRG BAT42WS SERIES_I2212.pdf
BAT42WS RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
auf Bestellung 8431 Stücke:
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46+0.46 EUR
74+0.29 EUR
119+0.18 EUR
500+0.13 EUR
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BAT54A RFG BAT54 SERIES_G2007.pdf
BAT54A RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 3000 Stücke:
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3000+0.074 EUR
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BAT54A RFG BAT54 SERIES_G2007.pdf
BAT54A RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 5478 Stücke:
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56+0.38 EUR
94+0.23 EUR
151+0.14 EUR
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BAT54C RFG BAT54 SERIES_G2007.pdf
BAT54C RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 66000 Stücke:
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3000+0.076 EUR
6000+0.068 EUR
9000+0.063 EUR
15000+0.058 EUR
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30000+0.054 EUR
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BAT54C RFG BAT54 SERIES_G2007.pdf
BAT54C RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 66294 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
91+0.23 EUR
146+0.14 EUR
500+0.1 EUR
1000+0.092 EUR
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BAT54S RFG BAT54 SERIES_G2007.pdf
BAT54S RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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BAT54S RFG BAT54 SERIES_G2007.pdf
BAT54S RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 2525 Stücke:
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AnzahlPrivatkunde
56+0.38 EUR
91+0.23 EUR
146+0.14 EUR
500+0.1 EUR
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BAV21W RHG BAV19W SERIES_E15.pdf
BAV21W RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 250V 200MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar
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BAV21W RHG BAV19W SERIES_E15.pdf
BAV21W RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 250V 200MA SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 393 Stücke:
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53+0.39 EUR
87+0.24 EUR
141+0.15 EUR
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BAV21WS RRG BAV19WS SERIES_K2212.pdf
BAV21WS RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 250V 200MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar
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BC847B RFG BC846A Series_I2001.pdf
BC847B RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 3000 Stücke:
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3000+0.06 EUR
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BC847B RFG BC846A Series_I2001.pdf
BC847B RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 3778 Stücke:
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67+0.31 EUR
114+0.18 EUR
184+0.11 EUR
500+0.083 EUR
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BYG20D R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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BYG20G R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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BYG20G R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 334 Stücke:
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13+1.68 EUR
20+1.05 EUR
100+0.68 EUR
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BYG20J R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
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BYG21M R3G
BYG21M R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
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BYG21M R3G
BYG21M R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 81 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
33+0.64 EUR
Mindestbestellmenge: 22 Stücke
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BYG21MHR3G
BYG21MHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYG21MHR3G
BYG21MHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 983 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.19 EUR
29+0.74 EUR
100+0.48 EUR
500+0.36 EUR
Mindestbestellmenge: 18 Stücke
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BZD17C15P R3G BZD17C%20SERIES_L2103.pdf
BZD17C15P R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 800MW SUB SMA
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1800+0.56 EUR
Mindestbestellmenge: 1800 Stücke
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BZD17C15P R3G BZD17C%20SERIES_L2103.pdf
BZD17C15P R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 800MW SUB SMA
auf Bestellung 3226 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.19 EUR
20+1.06 EUR
100+0.81 EUR
500+0.64 EUR
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BZD27C100P R3G BZD27C%20SERIES_AB2103.pdf
BZD27C100P R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 100V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 2360 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1800+0.3 EUR
Mindestbestellmenge: 1800 Stücke
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BZD27C100P R3G BZD27C%20SERIES_AB2103.pdf
BZD27C100P R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 100V 1W SUB SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 3007 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
27+0.8 EUR
100+0.56 EUR
500+0.43 EUR
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BZD27C100P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C100P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 100V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BZD27C100P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C100P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 100V 1W SUB SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 1028 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.09 EUR
32+0.67 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 20 Stücke
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BZD27C12P R3G BZD27C%20SERIES_AB2103.pdf
BZD27C12P R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12.05V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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BZD27C12P R3G BZD27C%20SERIES_AB2103.pdf
BZD27C12P R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12.05V 1W SUB SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
auf Bestellung 244 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.24 EUR
20+1.09 EUR
100+0.83 EUR
Mindestbestellmenge: 17 Stücke
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BZD27C13P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C13P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
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BZD27C13P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C13P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C15P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C15P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
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BZD27C15P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C15P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
auf Bestellung 532 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
42+0.5 EUR
100+0.35 EUR
500+0.26 EUR
Mindestbestellmenge: 28 Stücke
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BZD27C200P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C200P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 200V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
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BZD27C200P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C200P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 200V 1W SUB SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C22P R3G BZD27C%20SERIES_AB2103.pdf
BZD27C22P R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22.05V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22.05 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1800+0.21 EUR
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C22P R3G BZD27C%20SERIES_AB2103.pdf
BZD27C22P R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22.05V 1W SUB SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22.05 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
auf Bestellung 2761 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.49 EUR
21+1 EUR
100+0.69 EUR
500+0.55 EUR
Mindestbestellmenge: 15 Stücke
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BZD27C33P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C33P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1W SUB SMA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.24 EUR
6000+0.23 EUR
Mindestbestellmenge: 3000 Stücke
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BZD27C33P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C33P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1W SUB SMA
auf Bestellung 7771 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.86 EUR
31+0.69 EUR
100+0.48 EUR
500+0.36 EUR
1000+0.26 EUR
Mindestbestellmenge: 25 Stücke
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BZD27C36P R3G BZD27C%20SERIES_AB2103.pdf
BZD27C36P R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 1W SUB SMA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3600 Stücke
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BZD27C36P R3G BZD27C%20SERIES_AB2103.pdf
BZD27C36P R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 1W SUB SMA
auf Bestellung 44 Stücke:
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BZD27C43P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C43P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C43P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C43P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C51P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C51P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.23 EUR
6000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
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BZD27C51P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C51P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
auf Bestellung 12007 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
33+0.65 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.25 EUR
Mindestbestellmenge: 26 Stücke
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BZT52B10 RHG
BZT52B10 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW SOD123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 180 nA @ 7 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.087 EUR
6000+0.08 EUR
9000+0.067 EUR
Mindestbestellmenge: 3000 Stücke
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BZT52B10 RHG
BZT52B10 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW SOD123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 180 nA @ 7 V
auf Bestellung 16730 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
60+0.36 EUR
122+0.17 EUR
500+0.14 EUR
1000+0.1 EUR
Mindestbestellmenge: 40 Stücke
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BZT52B12 RHG BZT52B2V4 series_F15.pdf
BZT52B12 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW SOD123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.074 EUR
6000+0.065 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZT52B12 RHG BZT52B2V4 series_F15.pdf
BZT52B12 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
auf Bestellung 6638 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
94+0.23 EUR
151+0.14 EUR
500+0.1 EUR
1000+0.089 EUR
Mindestbestellmenge: 56 Stücke
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BZT52B15 RHG BZT52B2V4 series_F15.pdf
BZT52B15 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 10.5 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.074 EUR
6000+0.065 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZT52B15 RHG BZT52B2V4 series_F15.pdf
BZT52B15 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 10.5 V
auf Bestellung 7821 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
94+0.23 EUR
151+0.14 EUR
500+0.1 EUR
1000+0.089 EUR
Mindestbestellmenge: 56 Stücke
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BZT52B18 RHG BZT52B2V4 series_F15.pdf
BZT52B18 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW SOD123F
Current - Reverse Leakage @ Vr: 45 nA @ 12.6 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123F
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.054 EUR
6000+0.05 EUR
9000+0.043 EUR
Mindestbestellmenge: 3000 Stücke
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BZT52B18 RHG BZT52B2V4 series_F15.pdf
BZT52B18 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW SOD123F
Current - Reverse Leakage @ Vr: 45 nA @ 12.6 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123F
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 22529 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
97+0.21 EUR
197+0.11 EUR
500+0.089 EUR
1000+0.062 EUR
Mindestbestellmenge: 67 Stücke
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BZT52B2V4 RHG BZT52B2V4 series_F15.pdf
BZT52B2V4 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 µA @ 1 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZT52B2V4 RHG BZT52B2V4 series_F15.pdf
BZT52B2V4 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 µA @ 1 V
auf Bestellung 1486 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
95+0.23 EUR
152+0.14 EUR
500+0.1 EUR
1000+0.088 EUR
Mindestbestellmenge: 56 Stücke
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