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RS5J-T RS5J-T Taiwan Semiconductor Corporation Description: 250NS, 5A, 600V, FAST RECOVERY R
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.19 EUR
Mindestbestellmenge: 3000
RS5J-T RS5J-T Taiwan Semiconductor Corporation Description: 250NS, 5A, 600V, FAST RECOVERY R
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
32+ 0.56 EUR
100+ 0.34 EUR
500+ 0.31 EUR
1000+ 0.21 EUR
Mindestbestellmenge: 25
S5JH S5JH Taiwan Semiconductor Corporation Description: 5A, 600V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.26 EUR
Mindestbestellmenge: 3000
S5JH S5JH Taiwan Semiconductor Corporation Description: 5A, 600V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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24+0.76 EUR
27+ 0.65 EUR
100+ 0.45 EUR
500+ 0.36 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 24
HS5JH HS5JH Taiwan Semiconductor Corporation Description: 75NS, 5A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.35 EUR
Mindestbestellmenge: 3000
HS5JH HS5JH Taiwan Semiconductor Corporation Description: 75NS, 5A, 600V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
20+ 0.9 EUR
100+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 17
SMAJ26A SMAJ26A Taiwan Semiconductor Corporation SMAJ SERIES_U2102.pdf Description: TVS DIODE 26VWM 42.1VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
SMAJ26A SMAJ26A Taiwan Semiconductor Corporation SMAJ SERIES_U2102.pdf Description: TVS DIODE 26VWM 42.1VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 7480 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 24
SMA6J17A SMA6J17A Taiwan Semiconductor Corporation Description: TVS DIODE 17VWM 26.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.5A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 26.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMA6J17AH SMA6J17AH Taiwan Semiconductor Corporation Description: TVS DIODE 17VWM 26.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 22.5A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 26.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ28CA SMAJ28CA Taiwan Semiconductor Corporation SMAJ SERIES_U2102.pdf Description: TVS DIODE 28VWM 45.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
TS25P05G-K Taiwan Semiconductor Corporation Description: 25A, 600V, STANDARD BRIDGE RECTI
Packaging: Tube
Produkt ist nicht verfügbar
GBPC2510W GBPC2510W Taiwan Semiconductor Corporation gbpc2506t.pdf GBPC25005W-GBPC2510W%20N1783%20REV.A.pdf gbpc3510-d.pdf GBPC25005-2510_W.pdf Description: 25A, 1000V, STANDARD BRIDGE RECT
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.47 EUR
10+ 4.6 EUR
25+ 4.34 EUR
200+ 3.72 EUR
Mindestbestellmenge: 4
MBR1645 Taiwan Semiconductor Corporation MBR1635 SERIES_K2103.pdf Description: DIODE SCHOTTKY 45V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar
HS2MA HS2MA Taiwan Semiconductor Corporation HS2xA.pdf Description: DIODE GEN PURP 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
7500+0.13 EUR
Mindestbestellmenge: 7500
HS2MA HS2MA Taiwan Semiconductor Corporation HS2xA.pdf Description: DIODE GEN PURP 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 14893 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 24
HS2MA-T HS2MA-T Taiwan Semiconductor Corporation Description: 75NS, 2A, 1000V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
HS2M-T HS2M-T Taiwan Semiconductor Corporation Description: 75NS, 2A, 1000V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS2MA-T Taiwan Semiconductor Corporation Description: 500NS, 2A, 1000V, FAST RECOVERY
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
HER606GH HER606GH Taiwan Semiconductor Corporation Description: 75NS, 6A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1N5393G-T Taiwan Semiconductor Corporation ds30194.pdf Description: 1.5A, 200V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
1N4005G 1N4005G Taiwan Semiconductor Corporation 1N4001G SERIES_P2104.pdf Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.076 EUR
Mindestbestellmenge: 5000
1N4005G 1N4005G Taiwan Semiconductor Corporation 1N4001G SERIES_P2104.pdf Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 9860 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
53+ 0.34 EUR
108+ 0.16 EUR
500+ 0.14 EUR
1000+ 0.095 EUR
2000+ 0.082 EUR
Mindestbestellmenge: 36
1N4005G-K 1N4005G-K Taiwan Semiconductor Corporation 1N4001G-K SERIES_B2104.pdf Description: 1A, 600V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
1N4006G 1N4006G Taiwan Semiconductor Corporation 1N4001G SERIES_P2104.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.079 EUR
Mindestbestellmenge: 5000
1N4006G 1N4006G Taiwan Semiconductor Corporation 1N4001G SERIES_P2104.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 9988 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
51+ 0.35 EUR
104+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.098 EUR
2000+ 0.085 EUR
Mindestbestellmenge: 35
1N4006G-K 1N4006G-K Taiwan Semiconductor Corporation 1N4001G-K SERIES_B2104.pdf Description: 1A, 800V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
UG58G A0G UG58G A0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
UG58GHA0G UG58GHA0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ170CA SMAJ170CA Taiwan Semiconductor Corporation littelfuse_tvs_diode_smaj_datasheet.pdf.pdf SMAJ.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf Description: TVS DIODE 170VWM 275VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
MUR260H MUR260H Taiwan Semiconductor Corporation Description: 50NS, 2A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
3500+0.21 EUR
Mindestbestellmenge: 3500
MUR260H MUR260H Taiwan Semiconductor Corporation Description: 50NS, 2A, 600V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
30+ 0.6 EUR
100+ 0.36 EUR
500+ 0.33 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 23
MUR260 MUR260 Taiwan Semiconductor Corporation Description: 50NS, 2A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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MUR260 MUR260 Taiwan Semiconductor Corporation Description: 50NS, 2A, 600V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
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DBLS202GH Taiwan Semiconductor Corporation Description: 2A, 100V, STANDARD BRIDGE RECTIF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
BZT52C3V0 RHG BZT52C3V0 RHG Taiwan Semiconductor Corporation Description: DIODE ZENER 3V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 9 µA @ 1 V
auf Bestellung 6000 Stücke:
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3000+0.057 EUR
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BZT52C3V0 RHG BZT52C3V0 RHG Taiwan Semiconductor Corporation Description: DIODE ZENER 3V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 9 µA @ 1 V
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BZT52C3V0S R9G BZT52C3V0S R9G Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_J2212.pdf Description: SOD-323F, 200MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 9 µA @ 1 V
auf Bestellung 10000 Stücke:
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BZT52C3V0S R9G BZT52C3V0S R9G Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_J2212.pdf Description: SOD-323F, 200MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 9 µA @ 1 V
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BZT52C3V0-G RHG BZT52C3V0-G RHG Taiwan Semiconductor Corporation Description: DIODE ZENER 3V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 3000 Stücke:
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3000+0.067 EUR
Mindestbestellmenge: 3000
BZT52C3V0-G RHG BZT52C3V0-G RHG Taiwan Semiconductor Corporation Description: DIODE ZENER 3V 350MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 5900 Stücke:
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BZT52C3V0K RKG BZT52C3V0K RKG Taiwan Semiconductor Corporation Description: DIODE ZENER 3V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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3000+0.071 EUR
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BZT52C3V0K RKG BZT52C3V0K RKG Taiwan Semiconductor Corporation Description: DIODE ZENER 3V 200MW SOD523F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 5800 Stücke:
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BZT52C3V0 BZT52C3V0 Taiwan Semiconductor Corporation BZT52C2V4%20SERIES_G1804.pdf Description: SOD-123F, 500MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 9 µA @ 1 V
Produkt ist nicht verfügbar
MBR4045PT MBR4045PT Taiwan Semiconductor Corporation pdf.php?pn=MBR4045PT Description: DIODE ARR SCHOTT 45V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 40 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
TSM9409CS RLG TSM9409CS RLG Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 60V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3.5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
Produkt ist nicht verfügbar
TSM9409CS RLG TSM9409CS RLG Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 60V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3.5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
auf Bestellung 71 Stücke:
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P6KE160A P6KE160A Taiwan Semiconductor Corporation P6KE6.8%20SERIES-v1.jpg Description: TVS DIODE 136VWM 219VC DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
P6KE160A P6KE160A Taiwan Semiconductor Corporation P6KE6.8%20SERIES-v1.jpg Description: TVS DIODE 136VWM 219VC DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
GBU601 GBU601 Taiwan Semiconductor Corporation GBU601 SERIES_N2103.pdf Description: 6A, 50V, STANDARD BRIDGE RECTIFI
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Supplier Device Package: GBU
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
GBU601H GBU601H Taiwan Semiconductor Corporation GBU601 SERIES_N2103.pdf Description: 6A, 50V, STANDARD BRIDGE RECTIFI
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TBS808 TBS808 Taiwan Semiconductor Corporation TBS806 SERIES_A2010.pdf Description: 8A, 800V, STANDARD BRIDGE RECTIF
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
TBS808 TBS808 Taiwan Semiconductor Corporation TBS806 SERIES_A2010.pdf Description: 8A, 800V, STANDARD BRIDGE RECTIF
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1798 Stücke:
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13+1.46 EUR
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MBR6090PT Taiwan Semiconductor Corporation Description: 60A, 90V, PLANAR SCHOTTKY
Packaging: Tube
Produkt ist nicht verfügbar
MBR6090PTH Taiwan Semiconductor Corporation Description: 60A, 90V, PLANAR SCHOTTKY
Packaging: Tube
Produkt ist nicht verfügbar
MBR6090PT C0G MBR6090PT C0G Taiwan Semiconductor Corporation MBR6035PT%20SERIES_H2103.pdf Description: DIODE ARR SCHOTT 90V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 90 V
Produkt ist nicht verfügbar
1.5KE33A 1.5KE33A Taiwan Semiconductor Corporation media?resourcetype=datasheets&itemid=9d02c7d2-86a5-4bff-9251-966d6af02bf7&filename=littelfuse_tvs_diode_1_5ke_datasheet.pdf 1.5KEx.pdf en.CD00000663.pdf 1.5KE%20SERIES%20N0209%20REV.E.pdf 15ke68.pdf 1N6267A_Series.pdf Description: TVS 1500W 33.1V 5% UNIDIR DO-201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
SK310A SK310A Taiwan Semiconductor Corporation SK32A SERIES_W2304.pdf Description: DIODE SCHOTTKY 100V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 7500 Stücke:
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SK310A SK310A Taiwan Semiconductor Corporation SK32A SERIES_W2304.pdf Description: DIODE SCHOTTKY 100V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 13669 Stücke:
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MBR1550CT MBR1550CT Taiwan Semiconductor Corporation MBR1535CT SERIES_I2104.pdf Description: 15A, 50V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 300 µA @ 50 V
Produkt ist nicht verfügbar
RS5J-T
RS5J-T
Hersteller: Taiwan Semiconductor Corporation
Description: 250NS, 5A, 600V, FAST RECOVERY R
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 3000 Stücke:
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Anzahl Preis ohne MwSt
3000+0.19 EUR
Mindestbestellmenge: 3000
RS5J-T
RS5J-T
Hersteller: Taiwan Semiconductor Corporation
Description: 250NS, 5A, 600V, FAST RECOVERY R
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 3000 Stücke:
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25+0.72 EUR
32+ 0.56 EUR
100+ 0.34 EUR
500+ 0.31 EUR
1000+ 0.21 EUR
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S5JH
S5JH
Hersteller: Taiwan Semiconductor Corporation
Description: 5A, 600V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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Anzahl Preis ohne MwSt
3000+0.26 EUR
Mindestbestellmenge: 3000
S5JH
S5JH
Hersteller: Taiwan Semiconductor Corporation
Description: 5A, 600V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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24+0.76 EUR
27+ 0.65 EUR
100+ 0.45 EUR
500+ 0.36 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 24
HS5JH
HS5JH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 5A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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Anzahl Preis ohne MwSt
3000+0.35 EUR
Mindestbestellmenge: 3000
HS5JH
HS5JH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 5A, 600V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.06 EUR
20+ 0.9 EUR
100+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 17
SMAJ26A SMAJ SERIES_U2102.pdf
SMAJ26A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 26VWM 42.1VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
SMAJ26A SMAJ SERIES_U2102.pdf
SMAJ26A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 26VWM 42.1VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 7480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 24
SMA6J17A
SMA6J17A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 26.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.5A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 26.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMA6J17AH
SMA6J17AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 26.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 22.5A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 26.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ28CA SMAJ SERIES_U2102.pdf
SMAJ28CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
TS25P05G-K
Hersteller: Taiwan Semiconductor Corporation
Description: 25A, 600V, STANDARD BRIDGE RECTI
Packaging: Tube
Produkt ist nicht verfügbar
GBPC2510W gbpc2506t.pdf GBPC25005W-GBPC2510W%20N1783%20REV.A.pdf gbpc3510-d.pdf GBPC25005-2510_W.pdf
GBPC2510W
Hersteller: Taiwan Semiconductor Corporation
Description: 25A, 1000V, STANDARD BRIDGE RECT
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.47 EUR
10+ 4.6 EUR
25+ 4.34 EUR
200+ 3.72 EUR
Mindestbestellmenge: 4
MBR1645 MBR1635 SERIES_K2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar
HS2MA HS2xA.pdf
HS2MA
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7500+0.13 EUR
Mindestbestellmenge: 7500
HS2MA HS2xA.pdf
HS2MA
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 14893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 24
HS2MA-T
HS2MA-T
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 1000V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
HS2M-T
HS2M-T
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 1000V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS2MA-T
Hersteller: Taiwan Semiconductor Corporation
Description: 500NS, 2A, 1000V, FAST RECOVERY
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
HER606GH
HER606GH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 6A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1N5393G-T ds30194.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 200V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
1N4005G 1N4001G SERIES_P2104.pdf
1N4005G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.076 EUR
Mindestbestellmenge: 5000
1N4005G 1N4001G SERIES_P2104.pdf
1N4005G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 9860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
36+0.49 EUR
53+ 0.34 EUR
108+ 0.16 EUR
500+ 0.14 EUR
1000+ 0.095 EUR
2000+ 0.082 EUR
Mindestbestellmenge: 36
1N4005G-K 1N4001G-K SERIES_B2104.pdf
1N4005G-K
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 600V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
1N4006G 1N4001G SERIES_P2104.pdf
1N4006G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.079 EUR
Mindestbestellmenge: 5000
1N4006G 1N4001G SERIES_P2104.pdf
1N4006G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 9988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
35+0.51 EUR
51+ 0.35 EUR
104+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.098 EUR
2000+ 0.085 EUR
Mindestbestellmenge: 35
1N4006G-K 1N4001G-K SERIES_B2104.pdf
1N4006G-K
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 800V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
UG58G A0G
UG58G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
UG58GHA0G
UG58GHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ170CA littelfuse_tvs_diode_smaj_datasheet.pdf.pdf SMAJ.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf
SMAJ170CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 170VWM 275VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
MUR260H
MUR260H
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3500+0.21 EUR
Mindestbestellmenge: 3500
MUR260H
MUR260H
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 600V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
30+ 0.6 EUR
100+ 0.36 EUR
500+ 0.33 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 23
MUR260
MUR260
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3500+0.21 EUR
Mindestbestellmenge: 3500
MUR260
MUR260
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 600V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
30+ 0.6 EUR
100+ 0.36 EUR
500+ 0.33 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 23
DBLS202GH
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 100V, STANDARD BRIDGE RECTIF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
BZT52C3V0 RHG
BZT52C3V0 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 9 µA @ 1 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.057 EUR
6000+ 0.053 EUR
Mindestbestellmenge: 3000
BZT52C3V0 RHG
BZT52C3V0 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 9 µA @ 1 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
53+0.33 EUR
77+ 0.23 EUR
157+ 0.11 EUR
500+ 0.094 EUR
1000+ 0.065 EUR
Mindestbestellmenge: 53
BZT52C3V0S R9G BZT52C2V4S%20SERIES_J2212.pdf
BZT52C3V0S R9G
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 9 µA @ 1 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.049 EUR
Mindestbestellmenge: 10000
BZT52C3V0S R9G BZT52C2V4S%20SERIES_J2212.pdf
BZT52C3V0S R9G
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 9 µA @ 1 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
48+0.37 EUR
68+ 0.26 EUR
139+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.074 EUR
2000+ 0.064 EUR
5000+ 0.059 EUR
Mindestbestellmenge: 48
BZT52C3V0-G RHG
BZT52C3V0-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.067 EUR
Mindestbestellmenge: 3000
BZT52C3V0-G RHG
BZT52C3V0-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 350MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 5900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
44+0.4 EUR
65+ 0.27 EUR
131+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.078 EUR
Mindestbestellmenge: 44
BZT52C3V0K RKG
BZT52C3V0K RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.071 EUR
Mindestbestellmenge: 3000
BZT52C3V0K RKG
BZT52C3V0K RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 200MW SOD523F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 5800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
42+0.42 EUR
61+ 0.29 EUR
125+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.082 EUR
Mindestbestellmenge: 42
BZT52C3V0 BZT52C2V4%20SERIES_G1804.pdf
BZT52C3V0
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-123F, 500MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 9 µA @ 1 V
Produkt ist nicht verfügbar
MBR4045PT pdf.php?pn=MBR4045PT
MBR4045PT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 45V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 40 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
TSM9409CS RLG
TSM9409CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3.5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
Produkt ist nicht verfügbar
TSM9409CS RLG
TSM9409CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3.5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.44 EUR
15+ 1.24 EUR
Mindestbestellmenge: 13
P6KE160A P6KE6.8%20SERIES-v1.jpg
P6KE160A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
P6KE160A P6KE6.8%20SERIES-v1.jpg
P6KE160A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
GBU601 GBU601 SERIES_N2103.pdf
GBU601
Hersteller: Taiwan Semiconductor Corporation
Description: 6A, 50V, STANDARD BRIDGE RECTIFI
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Supplier Device Package: GBU
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
GBU601H GBU601 SERIES_N2103.pdf
GBU601H
Hersteller: Taiwan Semiconductor Corporation
Description: 6A, 50V, STANDARD BRIDGE RECTIFI
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TBS808 TBS806 SERIES_A2010.pdf
TBS808
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 800V, STANDARD BRIDGE RECTIF
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
TBS808 TBS806 SERIES_A2010.pdf
TBS808
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 800V, STANDARD BRIDGE RECTIF
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1798 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.46 EUR
14+ 1.27 EUR
100+ 0.88 EUR
500+ 0.73 EUR
Mindestbestellmenge: 13
MBR6090PT
Hersteller: Taiwan Semiconductor Corporation
Description: 60A, 90V, PLANAR SCHOTTKY
Packaging: Tube
Produkt ist nicht verfügbar
MBR6090PTH
Hersteller: Taiwan Semiconductor Corporation
Description: 60A, 90V, PLANAR SCHOTTKY
Packaging: Tube
Produkt ist nicht verfügbar
MBR6090PT C0G MBR6035PT%20SERIES_H2103.pdf
MBR6090PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 90V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 90 V
Produkt ist nicht verfügbar
1.5KE33A media?resourcetype=datasheets&itemid=9d02c7d2-86a5-4bff-9251-966d6af02bf7&filename=littelfuse_tvs_diode_1_5ke_datasheet.pdf 1.5KEx.pdf en.CD00000663.pdf 1.5KE%20SERIES%20N0209%20REV.E.pdf 15ke68.pdf 1N6267A_Series.pdf
1.5KE33A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS 1500W 33.1V 5% UNIDIR DO-201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
SK310A SK32A SERIES_W2304.pdf
SK310A
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7500+0.16 EUR
Mindestbestellmenge: 7500
SK310A SK32A SERIES_W2304.pdf
SK310A
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 13669 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
33+ 0.54 EUR
100+ 0.27 EUR
500+ 0.24 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 24
MBR1550CT MBR1535CT SERIES_I2104.pdf
MBR1550CT
Hersteller: Taiwan Semiconductor Corporation
Description: 15A, 50V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 300 µA @ 50 V
Produkt ist nicht verfügbar
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