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SRA820 SRA820 Taiwan Semiconductor Corporation SRA820 SERIES_J2103.pdf Description: 8A, 20V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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SRA890H SRA890H Taiwan Semiconductor Corporation Description: 8A, 90V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRA890 SRA890 Taiwan Semiconductor Corporation SRA820 SERIES_J2103.pdf Description: 8A, 90V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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SRA8100 SRA8100 Taiwan Semiconductor Corporation SRA820 SERIES_J2103.pdf Description: 8A, 100V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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SRA8100H SRA8100H Taiwan Semiconductor Corporation Description: 8A, 100V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRA860H SRA860H Taiwan Semiconductor Corporation Description: 8A, 60V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRA840H SRA840H Taiwan Semiconductor Corporation Description: 8A, 40V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRA820H SRA820H Taiwan Semiconductor Corporation Description: 8A, 20V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRA830H SRA830H Taiwan Semiconductor Corporation Description: 8A, 30V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRA850H SRA850H Taiwan Semiconductor Corporation Description: 8A, 50V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRA8150H SRA8150H Taiwan Semiconductor Corporation Description: 8A, 150V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSCDF16065G1 TSCDF16065G1 Taiwan Semiconductor Corporation Description: 16A, 650V, SIC SCHOTTKY DIODE
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 70pF @ 400V, 1MHz
Voltage - Peak Reverse (Max): 650V
Supplier Device Package: ITO-220AC
Current - Max: 16 A
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2+10.44 EUR
10+8.76 EUR
100+7.09 EUR
500+6.3 EUR
1000+5.39 EUR
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S10KCH S10KCH Taiwan Semiconductor Corporation S10GCH SERIES_A2102.pdf Description: DIODE GEN PURP 800V 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S10KCH S10KCH Taiwan Semiconductor Corporation S10GCH SERIES_A2102.pdf Description: DIODE GEN PURP 800V 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
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26+0.7 EUR
100+0.48 EUR
500+0.38 EUR
1000+0.31 EUR
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S10KC S10KC Taiwan Semiconductor Corporation S10GC SERIES_D2102.pdf Description: DIODE GEN PURP 800V 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
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S10KC S10KC Taiwan Semiconductor Corporation S10GC SERIES_D2102.pdf Description: DIODE GEN PURP 800V 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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26+0.7 EUR
100+0.48 EUR
500+0.38 EUR
1000+0.31 EUR
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SR1202 B0G SR1202 B0G Taiwan Semiconductor Corporation SR1202%20SERIES_G2105.pdf Description: DIODE SCHOTTKY 20V 12A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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SR1202HB0G SR1202HB0G Taiwan Semiconductor Corporation SR1202%20SERIES_G2105.pdf Description: DIODE SCHOTTKY 20V 12A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSM060NB06LCZ C0G TSM060NB06LCZ C0G Taiwan Semiconductor Corporation TSM060NB06LCZ_A2009.pdf Description: 60V, 111A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V
Power Dissipation (Max): 2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6273 pF @ 30 V
auf Bestellung 3970 Stücke:
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100+1.61 EUR
500+1.33 EUR
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TSM060NB06CZ C0G TSM060NB06CZ C0G Taiwan Semiconductor Corporation TSM060NB06CZ_A2008.pdf Description: 60V, 111A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V
Power Dissipation (Max): 2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6842 pF @ 30 V
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10+2.93 EUR
100+2.01 EUR
500+1.62 EUR
1000+1.49 EUR
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DBLS205G-T DBLS205G-T Taiwan Semiconductor Corporation DBLS204G-T%20SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 600V 2A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Produkt ist nicht verfügbar
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GPAS1005 GPAS1005 Taiwan Semiconductor Corporation GPAS1001 SERIES_D2211.pdf Description: DIODE GEN PURP 600V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1600 Stücke:
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SFS1005G SFS1005G Taiwan Semiconductor Corporation SFS1001G SERIES_I2103.pdf Description: DIODE ARRAY GP 300V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
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SFS1005G SFS1005G Taiwan Semiconductor Corporation SFS1001G SERIES_I2103.pdf Description: DIODE ARRAY GP 300V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
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ES2GA-T ES2GA-T Taiwan Semiconductor Corporation ES2DA-T%20SERIES_D2111.pdf Description: DIODE STANDARD 400V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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ES2G-T ES2G-T Taiwan Semiconductor Corporation ES2D-T%20SERIES_D2305.pdf Description: DIODE STANDARD 400V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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BZX84C3V6 BZX84C3V6 Taiwan Semiconductor Corporation BZX84C2V4%20SERIES_F2001.pdf Description: DIODE ZENER 3.6V 300MW SOT23
Tolerance: ±5.56%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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SFAS1008GH SFAS1008GH Taiwan Semiconductor Corporation SFAS1008GH_A2103.pdf Description: 35NS, 10A, 600V, SUPER FAST RECO
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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800+0.82 EUR
1600+0.67 EUR
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SFAS1008GH SFAS1008GH Taiwan Semiconductor Corporation SFAS1008GH_A2103.pdf Description: 35NS, 10A, 600V, SUPER FAST RECO
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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SFAS1008G SFAS1008G Taiwan Semiconductor Corporation SFAS1008G_E2103.pdf Description: 35NS, 10A, 600V, SUPER FAST RECO
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SFAS1008G SFAS1008G Taiwan Semiconductor Corporation SFAS1008G_E2103.pdf Description: 35NS, 10A, 600V, SUPER FAST RECO
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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HERAF1008G Taiwan Semiconductor Corporation HERAF1001G SERIES_I2105.pdf Description: DIODE GEN PURP 1KV 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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HERAF1008GH HERAF1008GH Taiwan Semiconductor Corporation HERAF1001G%20SERIES_I2105.pdf Description: 80NS, 10A, 1000V, HIGH EFFICIENT
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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SFS1008G SFS1008G Taiwan Semiconductor Corporation SFS1001G SERIES_I2103.pdf Description: DIODE GEN PURP 600V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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SFS1008G SFS1008G Taiwan Semiconductor Corporation SFS1001G SERIES_I2103.pdf Description: DIODE GEN PURP 600V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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SFS1008GH SFS1008GH Taiwan Semiconductor Corporation SFS1001GH SERIES_A2103.pdf Description: DIODE ARRAY GP 600V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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SFS1008GH SFS1008GH Taiwan Semiconductor Corporation SFS1001GH SERIES_A2103.pdf Description: DIODE ARRAY GP 600V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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SFA1008G Taiwan Semiconductor Corporation SFA1001G SERIES_K2103.pdf Description: DIODE GEN PURP 600V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SFA1008GH Taiwan Semiconductor Corporation SFA1001G%20SERIES_K2103.pdf Description: 35NS, 10A, 600V, SUPER FAST RECO
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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UG1008GH UG1008GH Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UGF1008GH UGF1008GH Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 600V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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UGF1008GAH UGF1008GAH Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 600V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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UGF1008GA UGF1008GA Taiwan Semiconductor Corporation UGF1004GA SERIES_C2105.pdf Description: DIODE ARRAY GP 600V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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UG1008G UG1008G Taiwan Semiconductor Corporation UG1004G SERIES_B2104.pdf Description: DIODE ARRAY GP 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SA150AH SA150AH Taiwan Semiconductor Corporation SA SERIES_L2105.pdf Description: TVS DIODE 150VWM 243VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1SMB5930 R5G 1SMB5930 R5G Taiwan Semiconductor Corporation 1SMB5926%20SERIES_M2102.pdf Description: DIODE ZENER 16V 3W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Produkt ist nicht verfügbar
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1SMB5930HR5G 1SMB5930HR5G Taiwan Semiconductor Corporation Description: DIODE ZENER 16V 3W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AA (SMB)
Grade: Automotive
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SSL33 M6G SSL33 M6G Taiwan Semiconductor Corporation SSL32%20SERIES_J2102.pdf Description: DIODE SCHOTTKY 30V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
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1.5KE110H 1.5KE110H Taiwan Semiconductor Corporation Description: 1500W, 110V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.9A
Voltage - Reverse Standoff (Typ): 89.2V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 99V
Voltage - Clamping (Max) @ Ipp: 158V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE110CH 1.5KE110CH Taiwan Semiconductor Corporation Description: 1500W, 110V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.9A
Voltage - Reverse Standoff (Typ): 89.2V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 99V
Voltage - Clamping (Max) @ Ipp: 158V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE110C 1.5KE110C Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: 1500W, 110V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.9A
Voltage - Reverse Standoff (Typ): 89.2V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 99V
Voltage - Clamping (Max) @ Ipp: 158V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ51A SMCJ51A Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: TVS DIODE 51VWM 82.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: Yes
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SMCJ51A SMCJ51A Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: TVS DIODE 51VWM 82.4VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: Yes
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TSM4ND65CI TSM4ND65CI Taiwan Semiconductor Corporation Description: MOSFET N-CH 650V 4A ITO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 596 pF @ 50 V
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TQM123KCX RFG TQM123KCX RFG Taiwan Semiconductor Corporation TQM123KCX_A2403.pdf Description: 100V, 0.17A, SINGLE N-CHANNEL SM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 328mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 34.7 pF @ 50 V
Qualification: AEC-Q101
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TQM123KCX RFG TQM123KCX RFG Taiwan Semiconductor Corporation TQM123KCX_A2403.pdf Description: 100V, 0.17A, SINGLE N-CHANNEL SM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 328mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 34.7 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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SMCJ28 SMCJ28 Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: 1500W, 34.6V, 10%, UNIDIRECTIONA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMCJ28 SMCJ28 Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: 1500W, 34.6V, 10%, UNIDIRECTIONA
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 2971 Stücke:
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TESDH3V3B03P1Q0 M3G TESDH3V3B03P1Q0 M3G Taiwan Semiconductor Corporation TESDH3V3B03P1Q0_A2305.pdf Description: TVS DIODE 3.3VWM 10.5V DFN06032L
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DFN0603-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
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TESDH3V3B03P1Q0 M3G TESDH3V3B03P1Q0 M3G Taiwan Semiconductor Corporation TESDH3V3B03P1Q0_A2305.pdf Description: TVS DIODE 3.3VWM 10.5V DFN06032L
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DFN0603-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 40W
Power Line Protection: No
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SRA820 SRA820 SERIES_J2103.pdf
SRA820
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 20V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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SRA890H
SRA890H
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 90V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRA890 SRA820 SERIES_J2103.pdf
SRA890
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 90V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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SRA8100 SRA820 SERIES_J2103.pdf
SRA8100
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 100V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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SRA8100H
SRA8100H
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 100V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRA860H
SRA860H
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 60V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRA840H
SRA840H
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 40V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRA820H
SRA820H
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 20V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRA830H
SRA830H
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 30V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRA850H
SRA850H
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 50V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRA8150H
SRA8150H
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 150V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSCDF16065G1
TSCDF16065G1
Hersteller: Taiwan Semiconductor Corporation
Description: 16A, 650V, SIC SCHOTTKY DIODE
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 70pF @ 400V, 1MHz
Voltage - Peak Reverse (Max): 650V
Supplier Device Package: ITO-220AC
Current - Max: 16 A
auf Bestellung 1000 Stücke:
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2+10.44 EUR
10+8.76 EUR
100+7.09 EUR
500+6.3 EUR
1000+5.39 EUR
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S10KCH S10GCH SERIES_A2102.pdf
S10KCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S10KCH S10GCH SERIES_A2102.pdf
S10KCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
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22+0.83 EUR
26+0.7 EUR
100+0.48 EUR
500+0.38 EUR
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S10KC S10GC SERIES_D2102.pdf
S10KC
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
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S10KC S10GC SERIES_D2102.pdf
S10KC
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 2970 Stücke:
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Anzahl Preis
22+0.83 EUR
26+0.7 EUR
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500+0.38 EUR
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SR1202 B0G SR1202%20SERIES_G2105.pdf
SR1202 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 12A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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SR1202HB0G SR1202%20SERIES_G2105.pdf
SR1202HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 12A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSM060NB06LCZ C0G TSM060NB06LCZ_A2009.pdf
TSM060NB06LCZ C0G
Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 111A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V
Power Dissipation (Max): 2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6273 pF @ 30 V
auf Bestellung 3970 Stücke:
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5+3.63 EUR
10+2.34 EUR
100+1.61 EUR
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TSM060NB06CZ C0G TSM060NB06CZ_A2008.pdf
TSM060NB06CZ C0G
Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 111A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V
Power Dissipation (Max): 2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6842 pF @ 30 V
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4+4.52 EUR
10+2.93 EUR
100+2.01 EUR
500+1.62 EUR
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DBLS205G-T DBLS204G-T%20SERIES_C2103.pdf
DBLS205G-T
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Produkt ist nicht verfügbar
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GPAS1005 GPAS1001 SERIES_D2211.pdf
GPAS1005
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1600 Stücke:
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13+1.41 EUR
16+1.15 EUR
100+0.89 EUR
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SFS1005G SFS1001G SERIES_I2103.pdf
SFS1005G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
auf Bestellung 1600 Stücke:
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Anzahl Preis
800+0.89 EUR
1600+0.72 EUR
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SFS1005G SFS1001G SERIES_I2103.pdf
SFS1005G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
auf Bestellung 1600 Stücke:
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Anzahl Preis
11+1.64 EUR
14+1.35 EUR
100+1.05 EUR
Mindestbestellmenge: 11
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ES2GA-T ES2DA-T%20SERIES_D2111.pdf
ES2GA-T
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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ES2G-T ES2D-T%20SERIES_D2305.pdf
ES2G-T
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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BZX84C3V6 BZX84C2V4%20SERIES_F2001.pdf
BZX84C3V6
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.6V 300MW SOT23
Tolerance: ±5.56%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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SFAS1008GH SFAS1008GH_A2103.pdf
SFAS1008GH
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 10A, 600V, SUPER FAST RECO
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+0.82 EUR
1600+0.67 EUR
Mindestbestellmenge: 800
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SFAS1008GH SFAS1008GH_A2103.pdf
SFAS1008GH
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 10A, 600V, SUPER FAST RECO
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
15+1.24 EUR
100+0.96 EUR
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SFAS1008G SFAS1008G_E2103.pdf
SFAS1008G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 10A, 600V, SUPER FAST RECO
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+0.82 EUR
1600+0.67 EUR
Mindestbestellmenge: 800
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SFAS1008G SFAS1008G_E2103.pdf
SFAS1008G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 10A, 600V, SUPER FAST RECO
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
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Anzahl Preis
12+1.51 EUR
15+1.24 EUR
100+0.96 EUR
Mindestbestellmenge: 12
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HERAF1008G HERAF1001G SERIES_I2105.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
11+1.67 EUR
50+1.34 EUR
100+1.06 EUR
500+0.9 EUR
1000+0.73 EUR
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HERAF1008GH HERAF1001G%20SERIES_I2105.pdf
HERAF1008GH
Hersteller: Taiwan Semiconductor Corporation
Description: 80NS, 10A, 1000V, HIGH EFFICIENT
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
50+1.34 EUR
100+1.06 EUR
500+0.9 EUR
1000+0.73 EUR
Mindestbestellmenge: 11
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SFS1008G SFS1001G SERIES_I2103.pdf
SFS1008G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+0.95 EUR
1600+0.77 EUR
Mindestbestellmenge: 800
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SFS1008G SFS1001G SERIES_I2103.pdf
SFS1008G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
13+1.43 EUR
100+1.11 EUR
Mindestbestellmenge: 11
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SFS1008GH SFS1001GH SERIES_A2103.pdf
SFS1008GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+0.95 EUR
1600+0.77 EUR
Mindestbestellmenge: 800
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SFS1008GH SFS1001GH SERIES_A2103.pdf
SFS1008GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
13+1.43 EUR
100+1.11 EUR
Mindestbestellmenge: 11
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SFA1008G SFA1001G SERIES_K2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
9+2.02 EUR
50+1.63 EUR
100+1.29 EUR
500+1.09 EUR
1000+0.89 EUR
Mindestbestellmenge: 9
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SFA1008GH SFA1001G%20SERIES_K2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 10A, 600V, SUPER FAST RECO
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.02 EUR
50+1.63 EUR
100+1.29 EUR
500+1.09 EUR
1000+0.89 EUR
Mindestbestellmenge: 9
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UG1008GH
UG1008GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UGF1008GH
UGF1008GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.5 EUR
14+1.3 EUR
100+0.9 EUR
500+0.75 EUR
1000+0.64 EUR
Mindestbestellmenge: 12
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UGF1008GAH
UGF1008GAH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
14+1.31 EUR
100+0.91 EUR
500+0.76 EUR
1000+0.65 EUR
Mindestbestellmenge: 12
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UGF1008GA UGF1004GA SERIES_C2105.pdf
UGF1008GA
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
14+1.31 EUR
100+0.91 EUR
500+0.76 EUR
1000+0.65 EUR
Mindestbestellmenge: 12
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UG1008G UG1004G SERIES_B2104.pdf
UG1008G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
50+1.23 EUR
100+0.98 EUR
500+0.83 EUR
1000+0.68 EUR
Mindestbestellmenge: 12
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SA150AH SA SERIES_L2105.pdf
SA150AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 150VWM 243VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1SMB5930 R5G 1SMB5926%20SERIES_M2102.pdf
1SMB5930 R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 3W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Produkt ist nicht verfügbar
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1SMB5930HR5G
1SMB5930HR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 3W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AA (SMB)
Grade: Automotive
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SSL33 M6G SSL32%20SERIES_J2102.pdf
SSL33 M6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
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1.5KE110H
1.5KE110H
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 110V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.9A
Voltage - Reverse Standoff (Typ): 89.2V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 99V
Voltage - Clamping (Max) @ Ipp: 158V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE110CH
1.5KE110CH
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 110V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.9A
Voltage - Reverse Standoff (Typ): 89.2V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 99V
Voltage - Clamping (Max) @ Ipp: 158V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE110C 1.5KE SERIES_O2104.pdf
1.5KE110C
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 110V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.9A
Voltage - Reverse Standoff (Typ): 89.2V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 99V
Voltage - Clamping (Max) @ Ipp: 158V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ51A SMCJ SERIES_S2104.pdf
SMCJ51A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: Yes
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.46 EUR
Mindestbestellmenge: 3000
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SMCJ51A SMCJ SERIES_S2104.pdf
SMCJ51A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: Yes
auf Bestellung 8177 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
17+1.06 EUR
100+0.73 EUR
500+0.61 EUR
1000+0.52 EUR
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TSM4ND65CI
TSM4ND65CI
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 650V 4A ITO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 596 pF @ 50 V
auf Bestellung 1845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.26 EUR
50+3.41 EUR
100+2.81 EUR
500+2.37 EUR
1000+2.02 EUR
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TQM123KCX RFG TQM123KCX_A2403.pdf
TQM123KCX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: 100V, 0.17A, SINGLE N-CHANNEL SM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 328mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 34.7 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
Mindestbestellmenge: 3000
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TQM123KCX RFG TQM123KCX_A2403.pdf
TQM123KCX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: 100V, 0.17A, SINGLE N-CHANNEL SM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 328mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 34.7 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
49+0.36 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.1 EUR
Mindestbestellmenge: 33
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SMCJ28 SMCJ SERIES_S2104.pdf
SMCJ28
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 34.6V, 10%, UNIDIRECTIONA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMCJ28 SMCJ SERIES_S2104.pdf
SMCJ28
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 34.6V, 10%, UNIDIRECTIONA
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 2971 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
14+1.27 EUR
100+0.98 EUR
500+0.83 EUR
1000+0.68 EUR
Mindestbestellmenge: 12
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TESDH3V3B03P1Q0 M3G TESDH3V3B03P1Q0_A2305.pdf
TESDH3V3B03P1Q0 M3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 3.3VWM 10.5V DFN06032L
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DFN0603-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
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TESDH3V3B03P1Q0 M3G TESDH3V3B03P1Q0_A2305.pdf
TESDH3V3B03P1Q0 M3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 3.3VWM 10.5V DFN06032L
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DFN0603-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 40W
Power Line Protection: No
auf Bestellung 7699 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
56+0.32 EUR
101+0.18 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
5000+0.1 EUR
Mindestbestellmenge: 34
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