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TUAR4JH TUAR4JH Taiwan Semiconductor Corporation TUAR4DH SERIES_A2111.pdf Description: DIODE STANDARD 600V 4A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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TUAR4GH TUAR4GH Taiwan Semiconductor Corporation TUAR4DH SERIES_A2111.pdf Description: DIODE STANDARD 400V 4A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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TUAR4GH TUAR4GH Taiwan Semiconductor Corporation TUAR4DH SERIES_A2111.pdf Description: DIODE STANDARD 400V 4A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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TUAS4JH TUAS4JH Taiwan Semiconductor Corporation TUAS4DH SERIES_A2111.pdf Description: 4A, 600V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC4.6U)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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TUAS4JH TUAS4JH Taiwan Semiconductor Corporation TUAS4DH SERIES_A2111.pdf Description: 4A, 600V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC4.6U)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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TUAS4DH TUAS4DH Taiwan Semiconductor Corporation TUAS4DH SERIES_A2111.pdf Description: 4A, 200V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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TUAS4DH TUAS4DH Taiwan Semiconductor Corporation TUAS4DH SERIES_A2111.pdf Description: 4A, 200V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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TUAR4DH TUAR4DH Taiwan Semiconductor Corporation TUAR4DH SERIES_A2111.pdf Description: DIODE STANDARD 200V 4A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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TUAR4DH TUAR4DH Taiwan Semiconductor Corporation TUAR4DH SERIES_A2111.pdf Description: DIODE STANDARD 200V 4A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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TUAS4GH TUAS4GH Taiwan Semiconductor Corporation TUAS4DH SERIES_A2111.pdf Description: 4A, 400V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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TUAS4GH TUAS4GH Taiwan Semiconductor Corporation TUAS4DH SERIES_A2111.pdf Description: 4A, 400V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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TUAS4KH TUAS4KH Taiwan Semiconductor Corporation TUAS4DH SERIES_A2111.pdf Description: 4A, 800V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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TUAS4KH TUAS4KH Taiwan Semiconductor Corporation TUAS4DH SERIES_A2111.pdf Description: 4A, 800V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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TUAR4KH TUAR4KH Taiwan Semiconductor Corporation TUAR4DH SERIES_A2111.pdf Description: 500NS, 4A, 800V, FAST RECOVERY R
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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TUAR4KH TUAR4KH Taiwan Semiconductor Corporation TUAR4DH SERIES_A2111.pdf Description: 500NS, 4A, 800V, FAST RECOVERY R
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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TUAR4MH TUAR4MH Taiwan Semiconductor Corporation TUAR4DH SERIES_A2111.pdf Description: 500NS, 4A, 1000V, FAST RECOVERY
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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TUAR4MH TUAR4MH Taiwan Semiconductor Corporation TUAR4DH SERIES_A2111.pdf Description: 500NS, 4A, 1000V, FAST RECOVERY
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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TUAS4MH TUAS4MH Taiwan Semiconductor Corporation TUAS4DH SERIES_A2111.pdf Description: 4A, 1000V, STANDARD RECOVERY REC
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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TUAS4MH TUAS4MH Taiwan Semiconductor Corporation TUAS4DH SERIES_A2111.pdf Description: 4A, 1000V, STANDARD RECOVERY REC
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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TUAS8DH TUAS8DH Taiwan Semiconductor Corporation TUAS8DH SERIES_A2111.pdf Description: 8A, 200V, STANDARD RECOVERY RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 62pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 200 V
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TUAS8DH TUAS8DH Taiwan Semiconductor Corporation TUAS8DH SERIES_A2111.pdf Description: 8A, 200V, STANDARD RECOVERY RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 62pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
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SMAJ130CA R3G SMAJ130CA R3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 130VWM 209VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.5A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 400W
Power Line Protection: No
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TQM019NH04LCR RLG TQM019NH04LCR RLG Taiwan Semiconductor Corporation TQM019NH04LCR_B2309.pdf Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
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TQM019NH04LCR RLG TQM019NH04LCR RLG Taiwan Semiconductor Corporation TQM019NH04LCR_B2309.pdf Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
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TQM019NH04CR RLG TQM019NH04CR RLG Taiwan Semiconductor Corporation TQM019NH04CR_B2309.pdf Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9044 pF @ 25 V
Qualification: AEC-Q101
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TQM019NH04CR RLG TQM019NH04CR RLG Taiwan Semiconductor Corporation TQM019NH04CR_B2309.pdf Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9044 pF @ 25 V
Qualification: AEC-Q101
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TQM025NH04CR RLG TQM025NH04CR RLG Taiwan Semiconductor Corporation TQM025NH04CR_B2309.pdf Description: 40V, 100A, SINGLE N-CHANNEL POWE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5691 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: 8-PDFNU (4.9x5.75)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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TQM025NH04CR RLG TQM025NH04CR RLG Taiwan Semiconductor Corporation TQM025NH04CR_B2309.pdf Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5691 pF @ 25 V
Qualification: AEC-Q101
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TQM025NH04LCR RLG TQM025NH04LCR RLG Taiwan Semiconductor Corporation TQM025NH04LCR_B2309.pdf Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6228 pF @ 25 V
Qualification: AEC-Q101
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TQM025NH04LCR RLG TQM025NH04LCR RLG Taiwan Semiconductor Corporation TQM025NH04LCR_B2309.pdf Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6228 pF @ 25 V
Qualification: AEC-Q101
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BZV55C6V2 BZV55C6V2 Taiwan Semiconductor Corporation BZV55C2V4%20SERIES_H2301.pdf Description: DIODE ZENER 6.2V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 2 V
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BZX55B5V1 A0G BZX55B5V1 A0G Taiwan Semiconductor Corporation BZX55B2V4 SERIES_G2301.pdf Description: DIODE ZENER 5.1V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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SMF4L75A SMF4L75A Taiwan Semiconductor Corporation SMF4L5.0A SERIES_ A2310.pdf Description: 400W, 87.7V, UNIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMF4L75A SMF4L75A Taiwan Semiconductor Corporation SMF4L5.0A SERIES_ A2310.pdf Description: 400W, 87.7V, UNIDIRECTIONAL, TVS
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
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TSL9A12V33CX5 RFG TSL9A12V33CX5 RFG Taiwan Semiconductor Corporation TSL9A12V series_A2402.pdf Description: 0.2A, 6V, LOW DROPOUT LINEAR VOL
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.575V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
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TSL9A12V33CX5 RFG TSL9A12V33CX5 RFG Taiwan Semiconductor Corporation TSL9A12V series_A2402.pdf Description: 0.2A, 6V, LOW DROPOUT LINEAR VOL
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.575V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
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TSL9A12V18CX RFG TSL9A12V18CX RFG Taiwan Semiconductor Corporation TSL9A12V series_A2402.pdf Description: IC REG LINEAR 1.8V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.607V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
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TSL9A12V18CX RFG TSL9A12V18CX RFG Taiwan Semiconductor Corporation TSL9A12V series_A2402.pdf Description: IC REG LINEAR 1.8V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.607V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
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TSL9A12V33CX RFG TSL9A12V33CX RFG Taiwan Semiconductor Corporation TSL9A12V series_A2402.pdf Description: IC REG LINEAR 3.3V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.575V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
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TSL9A12V33CX RFG TSL9A12V33CX RFG Taiwan Semiconductor Corporation TSL9A12V series_A2402.pdf Description: IC REG LINEAR 3.3V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.575V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
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TSL9A12V18CX5 RFG TSL9A12V18CX5 RFG Taiwan Semiconductor Corporation TSL9A12V series_A2402.pdf Description: IC REG LINEAR 1.8V 200MA SOT-25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.607V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
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TSL9A12V18CX5 RFG TSL9A12V18CX5 RFG Taiwan Semiconductor Corporation TSL9A12V series_A2402.pdf Description: IC REG LINEAR 1.8V 200MA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.607V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
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1N5397G-T 1N5397G-T Taiwan Semiconductor Corporation 1N5391G-T SERIES_B2105.pdf Description: DIODE STANDARD 600V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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FR303G-K FR303G-K Taiwan Semiconductor Corporation FR301G-K%20SERIES_C2105.pdf Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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FR303GH FR303GH Taiwan Semiconductor Corporation FR301G%20SERIES_H2105.pdf Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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TSM033NB04LCR RLG TSM033NB04LCR RLG Taiwan Semiconductor Corporation TSM033NB04LCR_B1804.pdf Description: MOSFET N-CH 40V 21A/121A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4456 pF @ 20 V
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TSM033NB04LCR RLG TSM033NB04LCR RLG Taiwan Semiconductor Corporation TSM033NB04LCR_B1804.pdf Description: MOSFET N-CH 40V 21A/121A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4456 pF @ 20 V
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TS25P06G-K TS25P06G-K Taiwan Semiconductor Corporation TS25P05G-K SERIES_C2104.pdf Description: BRIDGE RECT 1P 800V 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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FR102G-K FR102G-K Taiwan Semiconductor Corporation FR101G-K%20SERIES_B2104.pdf Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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FR102GH FR102GH Taiwan Semiconductor Corporation FR101G%20SERIES_H2104.pdf Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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S5GC-K S5GC-K Taiwan Semiconductor Corporation S5AC-K SERIES_B2102.pdf Description: 5A, 400V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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S5GH S5GH Taiwan Semiconductor Corporation S5AH SERIES_A2102.pdf Description: 5A, 400V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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S5GH S5GH Taiwan Semiconductor Corporation S5AH SERIES_A2102.pdf Description: 5A, 400V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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HS5G HS5G Taiwan Semiconductor Corporation HS5A SERIES_K2102.pdf Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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HS5G HS5G Taiwan Semiconductor Corporation HS5A SERIES_K2102.pdf Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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TSM9409CS TSM9409CS Taiwan Semiconductor Corporation TSM9409_C15.pdf Description: -60V, -3.5A, SINGLE P-CHANNEL PO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3.5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
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HER103G-K HER103G-K Taiwan Semiconductor Corporation HER101G-K%20SERIES_B2104.pdf Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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HER103GH HER103GH Taiwan Semiconductor Corporation HER101G%20SERIES_L2104.pdf Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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1.5KE91CA 1.5KE91CA Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf description Description: TVS DIODE 77.8VWM 125VC DO201
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 125V
Voltage - Breakdown (Min): 86.5V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 77.8V
Current - Peak Pulse (10/1000µs): 12.6A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
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ZM4743A L0G ZM4743A L0G Taiwan Semiconductor Corporation ZM4728A SERIES_E2301.pdf Description: DIODE ZENER 13V 1W MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: MELF
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
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TUAR4JH TUAR4DH SERIES_A2111.pdf
TUAR4JH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 4A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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TUAR4GH TUAR4DH SERIES_A2111.pdf
TUAR4GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 4A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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TUAR4GH TUAR4DH SERIES_A2111.pdf
TUAR4GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 4A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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TUAS4JH TUAS4DH SERIES_A2111.pdf
TUAS4JH
Hersteller: Taiwan Semiconductor Corporation
Description: 4A, 600V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC4.6U)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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TUAS4JH TUAS4DH SERIES_A2111.pdf
TUAS4JH
Hersteller: Taiwan Semiconductor Corporation
Description: 4A, 600V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC4.6U)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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TUAS4DH TUAS4DH SERIES_A2111.pdf
TUAS4DH
Hersteller: Taiwan Semiconductor Corporation
Description: 4A, 200V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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TUAS4DH TUAS4DH SERIES_A2111.pdf
TUAS4DH
Hersteller: Taiwan Semiconductor Corporation
Description: 4A, 200V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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TUAR4DH TUAR4DH SERIES_A2111.pdf
TUAR4DH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 4A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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TUAR4DH TUAR4DH SERIES_A2111.pdf
TUAR4DH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 4A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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TUAS4GH TUAS4DH SERIES_A2111.pdf
TUAS4GH
Hersteller: Taiwan Semiconductor Corporation
Description: 4A, 400V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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TUAS4GH TUAS4DH SERIES_A2111.pdf
TUAS4GH
Hersteller: Taiwan Semiconductor Corporation
Description: 4A, 400V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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20+1.05 EUR
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TUAS4KH TUAS4DH SERIES_A2111.pdf
TUAS4KH
Hersteller: Taiwan Semiconductor Corporation
Description: 4A, 800V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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TUAS4KH TUAS4DH SERIES_A2111.pdf
TUAS4KH
Hersteller: Taiwan Semiconductor Corporation
Description: 4A, 800V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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19+1.11 EUR
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100+0.65 EUR
500+0.51 EUR
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TUAR4KH TUAR4DH SERIES_A2111.pdf
TUAR4KH
Hersteller: Taiwan Semiconductor Corporation
Description: 500NS, 4A, 800V, FAST RECOVERY R
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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TUAR4KH TUAR4DH SERIES_A2111.pdf
TUAR4KH
Hersteller: Taiwan Semiconductor Corporation
Description: 500NS, 4A, 800V, FAST RECOVERY R
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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TUAR4MH TUAR4DH SERIES_A2111.pdf
TUAR4MH
Hersteller: Taiwan Semiconductor Corporation
Description: 500NS, 4A, 1000V, FAST RECOVERY
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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6000+0.36 EUR
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TUAR4MH TUAR4DH SERIES_A2111.pdf
TUAR4MH
Hersteller: Taiwan Semiconductor Corporation
Description: 500NS, 4A, 1000V, FAST RECOVERY
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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TUAS4MH TUAS4DH SERIES_A2111.pdf
TUAS4MH
Hersteller: Taiwan Semiconductor Corporation
Description: 4A, 1000V, STANDARD RECOVERY REC
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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TUAS4MH TUAS4DH SERIES_A2111.pdf
TUAS4MH
Hersteller: Taiwan Semiconductor Corporation
Description: 4A, 1000V, STANDARD RECOVERY REC
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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TUAS8DH TUAS8DH SERIES_A2111.pdf
TUAS8DH
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 200V, STANDARD RECOVERY RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 62pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 200 V
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TUAS8DH TUAS8DH SERIES_A2111.pdf
TUAS8DH
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 200V, STANDARD RECOVERY RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 62pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
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SMAJ130CA R3G SMAJ%20SERIES_U2102.pdf
SMAJ130CA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 130VWM 209VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.5A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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TQM019NH04LCR RLG TQM019NH04LCR_B2309.pdf
TQM019NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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2500+2.39 EUR
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TQM019NH04LCR RLG TQM019NH04LCR_B2309.pdf
TQM019NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
auf Bestellung 4995 Stücke:
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TQM019NH04CR RLG TQM019NH04CR_B2309.pdf
TQM019NH04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9044 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TQM019NH04CR RLG TQM019NH04CR_B2309.pdf
TQM019NH04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9044 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4980 Stücke:
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TQM025NH04CR RLG TQM025NH04CR_B2309.pdf
TQM025NH04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5691 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: 8-PDFNU (4.9x5.75)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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5000+1.69 EUR
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TQM025NH04CR RLG TQM025NH04CR_B2309.pdf
TQM025NH04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5691 pF @ 25 V
Qualification: AEC-Q101
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TQM025NH04LCR RLG TQM025NH04LCR_B2309.pdf
TQM025NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6228 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TQM025NH04LCR RLG TQM025NH04LCR_B2309.pdf
TQM025NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6228 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1980 Stücke:
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10+3.68 EUR
100+2.53 EUR
500+2.05 EUR
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BZV55C6V2 BZV55C2V4%20SERIES_H2301.pdf
BZV55C6V2
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 2 V
Produkt ist nicht verfügbar
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BZX55B5V1 A0G BZX55B2V4 SERIES_G2301.pdf
BZX55B5V1 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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SMF4L75A SMF4L5.0A SERIES_ A2310.pdf
SMF4L75A
Hersteller: Taiwan Semiconductor Corporation
Description: 400W, 87.7V, UNIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 20000 Stücke:
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10000+0.15 EUR
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SMF4L75A SMF4L5.0A SERIES_ A2310.pdf
SMF4L75A
Hersteller: Taiwan Semiconductor Corporation
Description: 400W, 87.7V, UNIDIRECTIONAL, TVS
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 20000 Stücke:
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TSL9A12V33CX5 RFG TSL9A12V series_A2402.pdf
TSL9A12V33CX5 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: 0.2A, 6V, LOW DROPOUT LINEAR VOL
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.575V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
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3000+0.29 EUR
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TSL9A12V33CX5 RFG TSL9A12V series_A2402.pdf
TSL9A12V33CX5 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: 0.2A, 6V, LOW DROPOUT LINEAR VOL
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.575V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
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TSL9A12V18CX RFG TSL9A12V series_A2402.pdf
TSL9A12V18CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 1.8V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.607V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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TSL9A12V18CX RFG TSL9A12V series_A2402.pdf
TSL9A12V18CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 1.8V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.607V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
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TSL9A12V33CX RFG TSL9A12V series_A2402.pdf
TSL9A12V33CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.575V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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TSL9A12V33CX RFG TSL9A12V series_A2402.pdf
TSL9A12V33CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.575V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
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TSL9A12V18CX5 RFG TSL9A12V series_A2402.pdf
TSL9A12V18CX5 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 1.8V 200MA SOT-25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.607V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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TSL9A12V18CX5 RFG TSL9A12V series_A2402.pdf
TSL9A12V18CX5 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 1.8V 200MA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.607V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
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1N5397G-T 1N5391G-T SERIES_B2105.pdf
1N5397G-T
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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FR303G-K FR301G-K%20SERIES_C2105.pdf
FR303G-K
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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FR303GH FR301G%20SERIES_H2105.pdf
FR303GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSM033NB04LCR RLG TSM033NB04LCR_B1804.pdf
TSM033NB04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 21A/121A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4456 pF @ 20 V
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TSM033NB04LCR RLG TSM033NB04LCR_B1804.pdf
TSM033NB04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 21A/121A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4456 pF @ 20 V
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TS25P06G-K TS25P05G-K SERIES_C2104.pdf
TS25P06G-K
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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FR102G-K FR101G-K%20SERIES_B2104.pdf
FR102G-K
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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FR102GH FR101G%20SERIES_H2104.pdf
FR102GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S5GC-K S5AC-K SERIES_B2102.pdf
S5GC-K
Hersteller: Taiwan Semiconductor Corporation
Description: 5A, 400V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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S5GH S5AH SERIES_A2102.pdf
S5GH
Hersteller: Taiwan Semiconductor Corporation
Description: 5A, 400V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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S5GH S5AH SERIES_A2102.pdf
S5GH
Hersteller: Taiwan Semiconductor Corporation
Description: 5A, 400V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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HS5G HS5A SERIES_K2102.pdf
HS5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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HS5G HS5A SERIES_K2102.pdf
HS5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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TSM9409CS TSM9409_C15.pdf
TSM9409CS
Hersteller: Taiwan Semiconductor Corporation
Description: -60V, -3.5A, SINGLE P-CHANNEL PO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3.5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
Produkt ist nicht verfügbar
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HER103G-K HER101G-K%20SERIES_B2104.pdf
HER103G-K
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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HER103GH HER101G%20SERIES_L2104.pdf
HER103GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE91CA description 1.5KE SERIES_O2104.pdf
1.5KE91CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8VWM 125VC DO201
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 125V
Voltage - Breakdown (Min): 86.5V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 77.8V
Current - Peak Pulse (10/1000µs): 12.6A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ZM4743A L0G ZM4728A SERIES_E2301.pdf
ZM4743A L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 1W MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: MELF
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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