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TSCDK08120G2H TSCDK08120G2H Taiwan Semiconductor Corporation pdf.php?pn=TSCDK08120G2H Description: 8A, 1200V, AUTOMOTIVE, SIC SCHOT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 39pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Current - Max: 8 A
Qualification: AEC-Q101
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SMCJ110A SMCJ110A Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: TVS DIODE 110VWM 177VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.5A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCJ110A SMCJ110A Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: TVS DIODE 110VWM 177VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.5A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCJ110 SMCJ110 Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: TVS DIODE 110VWM 196VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 196V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCJ110 SMCJ110 Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: TVS DIODE 110VWM 196VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 196V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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BZX79B75 BZX79B75 Taiwan Semiconductor Corporation BZX79B2V4%20SERIES_G2304.pdf Description: DIODE ZENER 75V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 52.5 V
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BZX79B75 A0G BZX79B75 A0G Taiwan Semiconductor Corporation BZX79B2V4 SERIES_G2304.pdf Description: DIODE ZENER 75V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 52.5 V
Produkt ist nicht verfügbar
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BC846BSH RFG BC846BSH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC846BSH Description: SOT-363, 80V, 0.1A, NPN TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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BC846BSH RFG BC846BSH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC846BSH Description: SOT-363, 80V, 0.1A, NPN TRANSIST
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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PU1JLW Taiwan Semiconductor Corporation Description: DIODE STANDARD 600V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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PU1JLW Taiwan Semiconductor Corporation Description: DIODE STANDARD 600V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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PU1JLS Taiwan Semiconductor Corporation Description: DIODE STANDARD 600V 1A SOD123H
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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PU1JLS Taiwan Semiconductor Corporation Description: DIODE STANDARD 600V 1A SOD123H
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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PU2JLS PU2JLS Taiwan Semiconductor Corporation PU2JLS_A2212.pdf Description: DIODE STANDARD 600V 2A SOD123H
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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PU2JLS PU2JLS Taiwan Semiconductor Corporation PU2JLS_A2212.pdf Description: DIODE STANDARD 600V 2A SOD123H
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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PU2JB PU2JB Taiwan Semiconductor Corporation PU2JB_A2212.pdf Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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PU2JA PU2JA Taiwan Semiconductor Corporation PU2JA_A2212.pdf Description: DIODE STANDARD 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4A, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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PU2JA PU2JA Taiwan Semiconductor Corporation PU2JA_A2212.pdf Description: DIODE STANDARD 600V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4A, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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PU6BBH PU6BBH Taiwan Semiconductor Corporation PU6BBH SERIES_B2109.pdf Description: DIODE STANDARD 100V 6A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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PU6BBH PU6BBH Taiwan Semiconductor Corporation PU6BBH SERIES_B2109.pdf Description: DIODE STANDARD 100V 6A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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PU6DBH PU6DBH Taiwan Semiconductor Corporation PU6BBH SERIES_B2109.pdf Description: DIODE STANDARD 200V 6A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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PU6DBH PU6DBH Taiwan Semiconductor Corporation PU6BBH SERIES_B2109.pdf Description: DIODE STANDARD 200V 6A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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P2500M P2500M Taiwan Semiconductor Corporation P2500M_D2511.pdf?_gl=1*450823*_gcl_au*MTM1NTA2NDUxNi4xNzc2NzQ3OTk2*_ga*MTYwMjA2NTk5NC4xNzc2NzQ3OTg4*_ga_LTYFMC14JL*czE3NzY3NTMwNjEkbzMkZzAkdDE3NzY3NTMwNjEkajYwJGwwJGgxNTMxMjMxNjc2 Description: DIODE STANDARD 1000V 25A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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P2500M P2500M Taiwan Semiconductor Corporation P2500M_D2511.pdf?_gl=1*450823*_gcl_au*MTM1NTA2NDUxNi4xNzc2NzQ3OTk2*_ga*MTYwMjA2NTk5NC4xNzc2NzQ3OTg4*_ga_LTYFMC14JL*czE3NzY3NTMwNjEkbzMkZzAkdDE3NzY3NTMwNjEkajYwJGwwJGgxNTMxMjMxNjc2 Description: DIODE STANDARD 1000V 25A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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P2500MH P2500MH Taiwan Semiconductor Corporation P2500M_C2103.pdf Description: DIODE STANDARD 1000V 25A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 25A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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P2500MH P2500MH Taiwan Semiconductor Corporation P2500M_C2103.pdf Description: DIODE STANDARD 1000V 25A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 25A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
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PU2JFS PU2JFS Taiwan Semiconductor Corporation PU2JFS_A2212.pdf Description: DIODE STANDARD 600V 2A SOD128
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 22pF @ 4A, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
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PU2JFS PU2JFS Taiwan Semiconductor Corporation PU2JFS_A2212.pdf Description: DIODE STANDARD 600V 2A SOD128
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 22pF @ 4A, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
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PU2JLW PU2JLW Taiwan Semiconductor Corporation PU2JLW_A2212.pdf Description: DIODE STANDARD 600V 2A SOD123W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 22pF @ 4A, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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PU2JLW PU2JLW Taiwan Semiconductor Corporation PU2JLW_A2212.pdf Description: DIODE STANDARD 600V 2A SOD123W
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 22pF @ 4A, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
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P4SMA91CA P4SMA91CA Taiwan Semiconductor Corporation P4SMA SERIES_S2102.pdf Description: TVS DIODE 77.8VWM 125V DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 125V
Voltage - Breakdown (Min): 86.5V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 77.8V
Current - Peak Pulse (10/1000µs): 3.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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P4SMA91CA P4SMA91CA Taiwan Semiconductor Corporation P4SMA SERIES_S2102.pdf Description: TVS DIODE 77.8VWM 125V DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4SMA47CA P4SMA47CA Taiwan Semiconductor Corporation P4SMA SERIES_S2102.pdf Description: TVS DIODE 40.2VWM 64.8V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4SMA47CA P4SMA47CA Taiwan Semiconductor Corporation P4SMA SERIES_S2102.pdf Description: TVS DIODE 40.2VWM 64.8V DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
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PU8JC PU8JC Taiwan Semiconductor Corporation PU8JC_A2212.pdf Description: DIODE STANDARD 600V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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BZX85C36 BZX85C36 Taiwan Semiconductor Corporation BZX85C3V3%20SERIES_H2301.pdf Description: DIODE ZENER 36V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BC847CH RFG BC847CH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC847CH Description: 100MA, 80V NPN TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
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BC847CH RFG BC847CH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC847CH Description: 100MA, 80V NPN TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
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BC847CWH RFG BC847CWH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC847CWH Description: 100MA, 80V NPN TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
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BC847CWH RFG BC847CWH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC847CWH Description: 100MA, 80V NPN TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
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TSM075NH10LCR RLG TSM075NH10LCR RLG Taiwan Semiconductor Corporation pdf.php?pn=TSM075NH10LCR Description: 100A, 100V, SINGLE, N-CHANNEL LO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 60 V
Qualification: AEC-Q101
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TSM075NH10LCR RLG TSM075NH10LCR RLG Taiwan Semiconductor Corporation pdf.php?pn=TSM075NH10LCR Description: 100A, 100V, SINGLE, N-CHANNEL LO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 60 V
Qualification: AEC-Q101
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TSM075NH10CR RLG TSM075NH10CR RLG Taiwan Semiconductor Corporation pdf.php?pn=TSM075NH10CR Description: 100A, 100V, SINGLE, N-CHANNEL LO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1538 pF @ 60 V
Qualification: AEC-Q101
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TSM075NH10CR RLG TSM075NH10CR RLG Taiwan Semiconductor Corporation pdf.php?pn=TSM075NH10CR Description: 100A, 100V, SINGLE, N-CHANNEL LO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1538 pF @ 60 V
Qualification: AEC-Q101
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SMAJ15CAH SMAJ15CAH Taiwan Semiconductor Corporation SMAJH SERIES_A2102.pdf Description: TVS DIODE 15VWM 24.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16.4A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZX55B10 BZX55B10 Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_G2301.pdf Description: DIODE ZENER 10V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
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BZX55B10 A0G BZX55B10 A0G Taiwan Semiconductor Corporation BZX55B2V4 SERIES_G2301.pdf Description: DIODE ZENER 10V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Produkt ist nicht verfügbar
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MMSZ5241BH RHG MMSZ5241BH RHG Taiwan Semiconductor Corporation pdf.php?pn=MMSZ5241BH Description: SOD-123, 500MW, 5%, 11V, ZENER D
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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SMBJ160CA SMBJ160CA Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ160CA SMBJ160CA Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ160A SMBJ160A Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ160A SMBJ160A Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ160H SMBJ160H Taiwan Semiconductor Corporation SMBJH SERIES_A2102.pdf Description: TVS DIODE 160VWM 287VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 287V
Voltage - Breakdown (Min): 178V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 160V
Current - Peak Pulse (10/1000µs): 2.2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMBJ160 SMBJ160 Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 160VWM 287VC DO214AA
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 287V
Voltage - Breakdown (Min): 178V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 160V
Current - Peak Pulse (10/1000µs): 2.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Produkt ist nicht verfügbar
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SMBJ150CA SMBJ150CA Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 150VWM 243VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ150CA SMBJ150CA Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 150VWM 243VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ150 SMBJ150 Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 150VWM 266VC DO214AA
Current - Peak Pulse (10/1000µs): 2.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 266V
Voltage - Breakdown (Min): 167V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 150V
Produkt ist nicht verfügbar
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SMBJ150H SMBJ150H Taiwan Semiconductor Corporation SMBJH SERIES_A2102.pdf Description: TVS DIODE 150VWM 266VC DO214AA
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 266V
Voltage - Breakdown (Min): 167V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 150V
Current - Peak Pulse (10/1000µs): 2.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BC817-25WH RFG BC817-25WH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC817-25WH Description: SOT-323, 50V, 0.5A, NPN TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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BC817-25WH RFG BC817-25WH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC817-25WH Description: SOT-323, 50V, 0.5A, NPN TRANSIST
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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TSCDK08120G2H pdf.php?pn=TSCDK08120G2H
TSCDK08120G2H
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 1200V, AUTOMOTIVE, SIC SCHOT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 39pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Current - Max: 8 A
Qualification: AEC-Q101
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SMCJ110A SMCJ SERIES_S2104.pdf
SMCJ110A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 110VWM 177VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.5A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCJ110A SMCJ SERIES_S2104.pdf
SMCJ110A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 110VWM 177VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.5A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCJ110 SMCJ SERIES_S2104.pdf
SMCJ110
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 110VWM 196VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 196V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCJ110 SMCJ SERIES_S2104.pdf
SMCJ110
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 110VWM 196VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 196V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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BZX79B75 BZX79B2V4%20SERIES_G2304.pdf
BZX79B75
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 52.5 V
Produkt ist nicht verfügbar
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BZX79B75 A0G BZX79B2V4 SERIES_G2304.pdf
BZX79B75 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 52.5 V
Produkt ist nicht verfügbar
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BC846BSH RFG pdf.php?pn=BC846BSH
BC846BSH RFG
Hersteller: Taiwan Semiconductor Corporation
Description: SOT-363, 80V, 0.1A, NPN TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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3000+0.13 EUR
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BC846BSH RFG pdf.php?pn=BC846BSH
BC846BSH RFG
Hersteller: Taiwan Semiconductor Corporation
Description: SOT-363, 80V, 0.1A, NPN TRANSIST
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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PU1JLW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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PU1JLW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 12854 Stücke:
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PU1JLS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SOD123H
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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PU1JLS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SOD123H
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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PU2JLS PU2JLS_A2212.pdf
PU2JLS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A SOD123H
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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10000+0.14 EUR
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PU2JLS PU2JLS_A2212.pdf
PU2JLS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A SOD123H
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
auf Bestellung 15596 Stücke:
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PU2JB PU2JB_A2212.pdf
PU2JB
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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PU2JA PU2JA_A2212.pdf
PU2JA
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4A, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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PU2JA PU2JA_A2212.pdf
PU2JA
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4A, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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PU6BBH PU6BBH SERIES_B2109.pdf
PU6BBH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 6A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PU6BBH PU6BBH SERIES_B2109.pdf
PU6BBH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 6A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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PU6DBH PU6BBH SERIES_B2109.pdf
PU6DBH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 6A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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PU6DBH PU6BBH SERIES_B2109.pdf
PU6DBH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 6A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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P2500M P2500M_D2511.pdf?_gl=1*450823*_gcl_au*MTM1NTA2NDUxNi4xNzc2NzQ3OTk2*_ga*MTYwMjA2NTk5NC4xNzc2NzQ3OTg4*_ga_LTYFMC14JL*czE3NzY3NTMwNjEkbzMkZzAkdDE3NzY3NTMwNjEkajYwJGwwJGgxNTMxMjMxNjc2
P2500M
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 25A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P2500M P2500M_D2511.pdf?_gl=1*450823*_gcl_au*MTM1NTA2NDUxNi4xNzc2NzQ3OTk2*_ga*MTYwMjA2NTk5NC4xNzc2NzQ3OTg4*_ga_LTYFMC14JL*czE3NzY3NTMwNjEkbzMkZzAkdDE3NzY3NTMwNjEkajYwJGwwJGgxNTMxMjMxNjc2
P2500M
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 25A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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10+2.23 EUR
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P2500MH P2500M_C2103.pdf
P2500MH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 25A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 25A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P2500MH P2500M_C2103.pdf
P2500MH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 25A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 25A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
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PU2JFS PU2JFS_A2212.pdf
PU2JFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A SOD128
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 22pF @ 4A, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
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PU2JFS PU2JFS_A2212.pdf
PU2JFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A SOD128
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 22pF @ 4A, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
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PU2JLW PU2JLW_A2212.pdf
PU2JLW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A SOD123W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 22pF @ 4A, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
auf Bestellung 13865 Stücke:
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PU2JLW PU2JLW_A2212.pdf
PU2JLW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A SOD123W
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 22pF @ 4A, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
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P4SMA91CA P4SMA SERIES_S2102.pdf
P4SMA91CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8VWM 125V DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 125V
Voltage - Breakdown (Min): 86.5V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 77.8V
Current - Peak Pulse (10/1000µs): 3.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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P4SMA91CA P4SMA SERIES_S2102.pdf
P4SMA91CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8VWM 125V DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4SMA47CA P4SMA SERIES_S2102.pdf
P4SMA47CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4SMA47CA P4SMA SERIES_S2102.pdf
P4SMA47CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8V DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
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PU8JC PU8JC_A2212.pdf
PU8JC
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 2007 Stücke:
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100+0.71 EUR
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BZX85C36 BZX85C3V3%20SERIES_H2301.pdf
BZX85C36
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Produkt ist nicht verfügbar
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BC847CH RFG pdf.php?pn=BC847CH
BC847CH RFG
Hersteller: Taiwan Semiconductor Corporation
Description: 100MA, 80V NPN TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
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BC847CH RFG pdf.php?pn=BC847CH
BC847CH RFG
Hersteller: Taiwan Semiconductor Corporation
Description: 100MA, 80V NPN TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
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BC847CWH RFG pdf.php?pn=BC847CWH
BC847CWH RFG
Hersteller: Taiwan Semiconductor Corporation
Description: 100MA, 80V NPN TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
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BC847CWH RFG pdf.php?pn=BC847CWH
BC847CWH RFG
Hersteller: Taiwan Semiconductor Corporation
Description: 100MA, 80V NPN TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
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53+0.39 EUR
87+0.24 EUR
140+0.15 EUR
500+0.11 EUR
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TSM075NH10LCR RLG pdf.php?pn=TSM075NH10LCR
TSM075NH10LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 100A, 100V, SINGLE, N-CHANNEL LO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSM075NH10LCR RLG pdf.php?pn=TSM075NH10LCR
TSM075NH10LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 100A, 100V, SINGLE, N-CHANNEL LO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 60 V
Qualification: AEC-Q101
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10+2.96 EUR
100+2.02 EUR
500+1.62 EUR
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TSM075NH10CR RLG pdf.php?pn=TSM075NH10CR
TSM075NH10CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 100A, 100V, SINGLE, N-CHANNEL LO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1538 pF @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSM075NH10CR RLG pdf.php?pn=TSM075NH10CR
TSM075NH10CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 100A, 100V, SINGLE, N-CHANNEL LO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1538 pF @ 60 V
Qualification: AEC-Q101
auf Bestellung 4990 Stücke:
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AnzahlPrivatkunde
5+4.58 EUR
10+2.95 EUR
100+2.01 EUR
500+1.61 EUR
1000+1.48 EUR
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SMAJ15CAH SMAJH SERIES_A2102.pdf
SMAJ15CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16.4A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX55B10 BZX55B2V4%20SERIES_G2301.pdf
BZX55B10
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Produkt ist nicht verfügbar
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BZX55B10 A0G BZX55B2V4 SERIES_G2301.pdf
BZX55B10 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Produkt ist nicht verfügbar
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MMSZ5241BH RHG pdf.php?pn=MMSZ5241BH
MMSZ5241BH RHG
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-123, 500MW, 5%, 11V, ZENER D
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMBJ160CA SMBJ SERIES_R2104.pdf
SMBJ160CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 3000 Stücke:
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SMBJ160CA SMBJ SERIES_R2104.pdf
SMBJ160CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 5840 Stücke:
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SMBJ160A SMBJ SERIES_R2104.pdf
SMBJ160A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 3000 Stücke:
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3000+0.24 EUR
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SMBJ160A SMBJ SERIES_R2104.pdf
SMBJ160A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 5940 Stücke:
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21+1.02 EUR
33+0.64 EUR
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SMBJ160H SMBJH SERIES_A2102.pdf
SMBJ160H
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160VWM 287VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 287V
Voltage - Breakdown (Min): 178V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 160V
Current - Peak Pulse (10/1000µs): 2.2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMBJ160 SMBJ SERIES_R2104.pdf
SMBJ160
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160VWM 287VC DO214AA
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 287V
Voltage - Breakdown (Min): 178V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 160V
Current - Peak Pulse (10/1000µs): 2.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Produkt ist nicht verfügbar
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SMBJ150CA SMBJ SERIES_R2104.pdf
SMBJ150CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 150VWM 243VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 600W
Power Line Protection: No
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AnzahlPrivatkunde
3000+0.3 EUR
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SMBJ150CA SMBJ SERIES_R2104.pdf
SMBJ150CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 150VWM 243VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 4378 Stücke:
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SMBJ150 SMBJ SERIES_R2104.pdf
SMBJ150
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 150VWM 266VC DO214AA
Current - Peak Pulse (10/1000µs): 2.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 266V
Voltage - Breakdown (Min): 167V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 150V
Produkt ist nicht verfügbar
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SMBJ150H SMBJH SERIES_A2102.pdf
SMBJ150H
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 150VWM 266VC DO214AA
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 266V
Voltage - Breakdown (Min): 167V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 150V
Current - Peak Pulse (10/1000µs): 2.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BC817-25WH RFG pdf.php?pn=BC817-25WH
BC817-25WH RFG
Hersteller: Taiwan Semiconductor Corporation
Description: SOT-323, 50V, 0.5A, NPN TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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AnzahlPrivatkunde
3000+0.1 EUR
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BC817-25WH RFG pdf.php?pn=BC817-25WH
BC817-25WH RFG
Hersteller: Taiwan Semiconductor Corporation
Description: SOT-323, 50V, 0.5A, NPN TRANSIST
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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