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P6KE18A P6KE18A Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 15.3VWM 25.2VC DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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HS3FBH HS3FBH Taiwan Semiconductor Corporation HS3ABH SERIES_A2102.pdf Description: DIODE STANDARD 300V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
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HS3FBH HS3FBH Taiwan Semiconductor Corporation HS3ABH SERIES_A2102.pdf Description: DIODE STANDARD 300V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
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BZT52C12S BZT52C12S Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_K2411.pdf Description: DIODE ZENER 12V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
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BZT52B43SH RRG BZT52B43SH RRG Taiwan Semiconductor Corporation BZT52B2V4S%20SERIES_I2411.pdf Description: SOD-323, 200MW, 2%, 43V, ZENER D
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 29.4 V
Qualification: AEC-Q101
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BZX84JB43H RRG BZX84JB43H RRG Taiwan Semiconductor Corporation pdf.php?pn=BZX84JB43H Description: SOD-323F, 550MW, 2%, 43V, ZENER
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 29.4 V
Qualification: AEC-Q101
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SSB2H60H SSB2H60H Taiwan Semiconductor Corporation pdf.php?pn=SSB2H60H Description: 2A, 60V SCHOTTKY BARRIER SURFACE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 94pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Qualification: AEC-Q101
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SSB2H60H SSB2H60H Taiwan Semiconductor Corporation pdf.php?pn=SSB2H60H Description: 2A, 60V SCHOTTKY BARRIER SURFACE
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 94pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Qualification: AEC-Q101
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SSB2H40H SSB2H40H Taiwan Semiconductor Corporation pdf.php?pn=SSB2H40H Description: 2A, 40V SCHOTTKY BARRIER SURFACE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 99pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Qualification: AEC-Q101
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SSB2H40H SSB2H40H Taiwan Semiconductor Corporation pdf.php?pn=SSB2H40H Description: 2A, 40V SCHOTTKY BARRIER SURFACE
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 99pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Qualification: AEC-Q101
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SSB2H100H SSB2H100H Taiwan Semiconductor Corporation pdf.php?pn=SSB2H100H Description: 2A, 100V SCHOTTKY BARRIER SURFAC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 66pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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SSB2H100H SSB2H100H Taiwan Semiconductor Corporation pdf.php?pn=SSB2H100H Description: 2A, 100V SCHOTTKY BARRIER SURFAC
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 66pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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BZX85C18 BZX85C18 Taiwan Semiconductor Corporation BZX85C3V3%20SERIES_H2301.pdf Description: DIODE ZENER 18V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 13 V
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UG6005PTHC0G UG6005PTHC0G Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 300V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRF20150CT MBRF20150CT Taiwan Semiconductor Corporation MBRF2035CT SERIES_O2105.pdf Description: DIODE ARR SCHOTTKY 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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SMBJ58AH SMBJ58AH Taiwan Semiconductor Corporation SMBJH SERIES_A2102.pdf Description: TVS DIODE 58VWM 93.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ58AH SMBJ58AH Taiwan Semiconductor Corporation SMBJH SERIES_A2102.pdf Description: TVS DIODE 58VWM 93.6VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SRS2040 SRS2040 Taiwan Semiconductor Corporation SRS2020 SERIES_L2103.pdf Description: DIODE ARR SCHOTT 40V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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SRS2040H SRS2040H Taiwan Semiconductor Corporation SRS2020H SERIES_A2103.pdf Description: DIODE ARR SCHOTT 40V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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MBRF30100CT MBRF30100CT Taiwan Semiconductor Corporation MBRF3035CT SERIES_M2105.pdf Description: DIODE ARR SCHOTTKY 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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BZT52C4V7S BZT52C4V7S Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_K2411.pdf Description: DIODE ZENER 4.7V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 2.7 µA @ 2 V
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M3Z24VC RRG M3Z24VC RRG Taiwan Semiconductor Corporation M3Z2V0C SERIES_B2008.pdf Description: DIODE ZENER 24V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
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M3Z24VC RRG M3Z24VC RRG Taiwan Semiconductor Corporation M3Z2V0C SERIES_B2008.pdf Description: DIODE ZENER 24V 200MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
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ABS20M ABS20M Taiwan Semiconductor Corporation ABS20M_B2103.pdf Description: BRIDGE RECT 1PHASE 1KV 2A ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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ABS20M ABS20M Taiwan Semiconductor Corporation ABS20M_B2103.pdf Description: BRIDGE RECT 1PHASE 1KV 2A ABS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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SBS26 SBS26 Taiwan Semiconductor Corporation SBS24 SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 60V 2A ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 60 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
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UGF2008GHC0G UGF2008GHC0G Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 600V 20A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ13CA SMBJ13CA Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: Yes
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SMBJ13CA SMBJ13CA Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: Yes
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GBU804 GBU804 Taiwan Semiconductor Corporation GBU801 SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 400V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1.5SMC75 1.5SMC75 Taiwan Semiconductor Corporation 1.5SMC SERIES_S2207.pdf Description: TVS DIODE 60.7VWM 108V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 14A
Voltage - Reverse Standoff (Typ): 60.7V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 67.5V
Voltage - Clamping (Max) @ Ipp: 108V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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BZX55B3V3 BZX55B3V3 Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_G2301.pdf Description: DIODE ZENER 3.3V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Produkt ist nicht verfügbar
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BZY55B36 RBG BZY55B36 RBG Taiwan Semiconductor Corporation BZY55B2V4 SERIES_D2301.pdf Description: DIODE ZENER 36V 500MW 805
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: 0805
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Produkt ist nicht verfügbar
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TSM048NM15TL RAG TSM048NM15TL RAG Taiwan Semiconductor Corporation pdf.php?pn=TSM048NM15TL Description: 150V, 224A, SINGLE, N-CHANNEL LO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 224A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TOLLA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9924 pF @ 75 V
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TSM048NM15TL RAG TSM048NM15TL RAG Taiwan Semiconductor Corporation pdf.php?pn=TSM048NM15TL Description: 150V, 224A, SINGLE, N-CHANNEL LO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 224A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TOLLA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9924 pF @ 75 V
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P6SMB51CAH P6SMB51CAH Taiwan Semiconductor Corporation P6SMBH SERIES_A2102.pdf Description: TVS DIODE 43.6VWM 70.1V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.9A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB51CAH P6SMB51CAH Taiwan Semiconductor Corporation P6SMBH SERIES_A2102.pdf Description: TVS DIODE 43.6VWM 70.1V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.9A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZT52C39 RHG BZT52C39 RHG Taiwan Semiconductor Corporation BZT52C2V4 SERIES_G1804.pdf Description: DIODE ZENER 39V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
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BZT52C39 RHG BZT52C39 RHG Taiwan Semiconductor Corporation BZT52C2V4 SERIES_G1804.pdf Description: DIODE ZENER 39V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
auf Bestellung 5895 Stücke:
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BZT52C39S R9G BZT52C39S R9G Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 39V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
Produkt ist nicht verfügbar
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BZT52C39S R9G BZT52C39S R9G Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 39V 200MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
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5000+0.068 EUR
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BZT52C39-G RHG BZT52C39-G RHG Taiwan Semiconductor Corporation BZT52C2V4%20-%20BZT52C75.pdf Description: DIODE ZENER 39V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
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BZT52C39-G RHG BZT52C39-G RHG Taiwan Semiconductor Corporation BZT52C2V4%20-%20BZT52C75.pdf Description: DIODE ZENER 39V 350MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
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BZT52C39K RKG BZT52C39K RKG Taiwan Semiconductor Corporation BZT52C2V7K SERIES_G2402.pdf Description: DIODE ZENER 39V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
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BZT52C39K RKG BZT52C39K RKG Taiwan Semiconductor Corporation BZT52C2V7K SERIES_G2402.pdf Description: DIODE ZENER 39V 200MW SOD523F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
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140+0.15 EUR
500+0.11 EUR
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BZT52C39S BZT52C39S Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_K2411.pdf Description: DIODE ZENER 39V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
Produkt ist nicht verfügbar
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BZT52C39 BZT52C39 Taiwan Semiconductor Corporation BZT52C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 39V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
Produkt ist nicht verfügbar
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BZT52C39-G BZT52C39-G Taiwan Semiconductor Corporation BZT52C2V4-G%20SERIES_C2007.pdf Description: DIODE ZENER 39V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
Produkt ist nicht verfügbar
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BZT52C39K BZT52C39K Taiwan Semiconductor Corporation BZT52C2V7K%20SERIES_G2402.pdf Description: DIODE ZENER 39V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Produkt ist nicht verfügbar
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BZX55C4V3 BZX55C4V3 Taiwan Semiconductor Corporation BZX55C2V0%20SERIES_E2301.pdf Description: DIODE ZENER 4.3V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Produkt ist nicht verfügbar
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BZT52B15SH RRG BZT52B15SH RRG Taiwan Semiconductor Corporation BZT52B2V4S%20SERIES_I2411.pdf Description: SOD-323, 200MW, 2%, 15V, ZENER D
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Qualification: AEC-Q101
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BZT52B15SH RRG BZT52B15SH RRG Taiwan Semiconductor Corporation BZT52B2V4S%20SERIES_I2411.pdf Description: SOD-323, 200MW, 2%, 15V, ZENER D
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Qualification: AEC-Q101
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50+0.42 EUR
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130+0.17 EUR
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TSCDM08120G2H TSCDM08120G2H Taiwan Semiconductor Corporation pdf.php?pn=TSCDM08120G2H Description: 8A, 1200V, AUTOMOTIVE, SIC SCHOT
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 39pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Max: 8 A
Qualification: AEC-Q101
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2500+2.96 EUR
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TSCDM08120G2H TSCDM08120G2H Taiwan Semiconductor Corporation pdf.php?pn=TSCDM08120G2H Description: 8A, 1200V, AUTOMOTIVE, SIC SCHOT
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 39pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Max: 8 A
Qualification: AEC-Q101
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TSCDT08120G2H TSCDT08120G2H Taiwan Semiconductor Corporation pdf.php?pn=TSCDT08120G2H Description: 8A, 1200V, AUTOMOTIVE, SIC SCHOT
Packaging: Tube
Package / Case: TO-220-2
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 39pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Supplier Device Package: TO-220AC
Grade: Automotive
Current - Max: 8 A
Qualification: AEC-Q101
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3+10.12 EUR
10+6.74 EUR
100+4.81 EUR
500+3.99 EUR
1000+3.72 EUR
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HS2G HS2G Taiwan Semiconductor Corporation HS2A SERIES_L2102.pdf Description: DIODE STANDARD 400V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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HS2G HS2G Taiwan Semiconductor Corporation HS2A SERIES_L2102.pdf Description: DIODE STANDARD 400V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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TSM230N06CI C0G TSM230N06CI C0G Taiwan Semiconductor Corporation TSM230N06Cx_C0G.pdf Description: MOSFET N-CH 60V 50A ITO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Produkt ist nicht verfügbar
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GBPC2510W GBPC2510W Taiwan Semiconductor Corporation GBPC15_25_35 SERIES_M2211.pdf Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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SF34G-A SF34G-A Taiwan Semiconductor Corporation SF31G-A SERIES_B2105.pdf Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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P6KE18A P6KE SERIES_P2203.pdf
P6KE18A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.2VC DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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HS3FBH HS3ABH SERIES_A2102.pdf
HS3FBH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
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HS3FBH HS3ABH SERIES_A2102.pdf
HS3FBH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
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BZT52C12S BZT52C2V4S%20SERIES_K2411.pdf
BZT52C12S
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
Produkt ist nicht verfügbar
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BZT52B43SH RRG BZT52B2V4S%20SERIES_I2411.pdf
BZT52B43SH RRG
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323, 200MW, 2%, 43V, ZENER D
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 29.4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84JB43H RRG pdf.php?pn=BZX84JB43H
BZX84JB43H RRG
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323F, 550MW, 2%, 43V, ZENER
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 29.4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SSB2H60H pdf.php?pn=SSB2H60H
SSB2H60H
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 60V SCHOTTKY BARRIER SURFACE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 94pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Qualification: AEC-Q101
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3000+0.19 EUR
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SSB2H60H pdf.php?pn=SSB2H60H
SSB2H60H
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 60V SCHOTTKY BARRIER SURFACE
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 94pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Qualification: AEC-Q101
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SSB2H40H pdf.php?pn=SSB2H40H
SSB2H40H
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 40V SCHOTTKY BARRIER SURFACE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 99pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Qualification: AEC-Q101
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SSB2H40H pdf.php?pn=SSB2H40H
SSB2H40H
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 40V SCHOTTKY BARRIER SURFACE
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 99pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Qualification: AEC-Q101
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SSB2H100H pdf.php?pn=SSB2H100H
SSB2H100H
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 100V SCHOTTKY BARRIER SURFAC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 66pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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SSB2H100H pdf.php?pn=SSB2H100H
SSB2H100H
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 100V SCHOTTKY BARRIER SURFAC
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 66pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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BZX85C18 BZX85C3V3%20SERIES_H2301.pdf
BZX85C18
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 13 V
Produkt ist nicht verfügbar
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UG6005PTHC0G
UG6005PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRF20150CT MBRF2035CT SERIES_O2105.pdf
MBRF20150CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTTKY 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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SMBJ58AH SMBJH SERIES_A2102.pdf
SMBJ58AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ58AH SMBJH SERIES_A2102.pdf
SMBJ58AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SRS2040 SRS2020 SERIES_L2103.pdf
SRS2040
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 40V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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SRS2040H SRS2020H SERIES_A2103.pdf
SRS2040H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 40V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRF30100CT MBRF3035CT SERIES_M2105.pdf
MBRF30100CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTTKY 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Produkt ist nicht verfügbar
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BZT52C4V7S BZT52C2V4S%20SERIES_K2411.pdf
BZT52C4V7S
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 2.7 µA @ 2 V
Produkt ist nicht verfügbar
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M3Z24VC RRG M3Z2V0C SERIES_B2008.pdf
M3Z24VC RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Produkt ist nicht verfügbar
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M3Z24VC RRG M3Z2V0C SERIES_B2008.pdf
M3Z24VC RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 200MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
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ABS20M ABS20M_B2103.pdf
ABS20M
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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ABS20M ABS20M_B2103.pdf
ABS20M
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A ABS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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SBS26 SBS24 SERIES_C2103.pdf
SBS26
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 60V 2A ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 60 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Produkt ist nicht verfügbar
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UGF2008GHC0G
UGF2008GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 20A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ13CA SMBJ SERIES_R2104.pdf
SMBJ13CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: Yes
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SMBJ13CA SMBJ SERIES_R2104.pdf
SMBJ13CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: Yes
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GBU804 GBU801 SERIES_M2103.pdf
GBU804
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1.5SMC75 1.5SMC SERIES_S2207.pdf
1.5SMC75
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 60.7VWM 108V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 14A
Voltage - Reverse Standoff (Typ): 60.7V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 67.5V
Voltage - Clamping (Max) @ Ipp: 108V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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BZX55B3V3 BZX55B2V4%20SERIES_G2301.pdf
BZX55B3V3
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Produkt ist nicht verfügbar
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BZY55B36 RBG BZY55B2V4 SERIES_D2301.pdf
BZY55B36 RBG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 500MW 805
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: 0805
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Produkt ist nicht verfügbar
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TSM048NM15TL RAG pdf.php?pn=TSM048NM15TL
TSM048NM15TL RAG
Hersteller: Taiwan Semiconductor Corporation
Description: 150V, 224A, SINGLE, N-CHANNEL LO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 224A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TOLLA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9924 pF @ 75 V
Produkt ist nicht verfügbar
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TSM048NM15TL RAG pdf.php?pn=TSM048NM15TL
TSM048NM15TL RAG
Hersteller: Taiwan Semiconductor Corporation
Description: 150V, 224A, SINGLE, N-CHANNEL LO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 224A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TOLLA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9924 pF @ 75 V
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P6SMB51CAH P6SMBH SERIES_A2102.pdf
P6SMB51CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43.6VWM 70.1V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.9A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB51CAH P6SMBH SERIES_A2102.pdf
P6SMB51CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43.6VWM 70.1V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.9A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZT52C39 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C39 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
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BZT52C39 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C39 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
auf Bestellung 5895 Stücke:
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BZT52C39S R9G BZT52C2V4S SERIES_J2212.pdf
BZT52C39S R9G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
Produkt ist nicht verfügbar
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BZT52C39S R9G BZT52C2V4S SERIES_J2212.pdf
BZT52C39S R9G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 200MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
auf Bestellung 9985 Stücke:
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BZT52C39-G RHG BZT52C2V4%20-%20BZT52C75.pdf
BZT52C39-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
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BZT52C39-G RHG BZT52C2V4%20-%20BZT52C75.pdf
BZT52C39-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 350MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
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BZT52C39K RKG BZT52C2V7K SERIES_G2402.pdf
BZT52C39K RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
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3000+0.08 EUR
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BZT52C39K RKG BZT52C2V7K SERIES_G2402.pdf
BZT52C39K RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 200MW SOD523F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
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AnzahlPrivatkunde
53+0.39 EUR
87+0.24 EUR
140+0.15 EUR
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BZT52C39S BZT52C2V4S%20SERIES_K2411.pdf
BZT52C39S
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
Produkt ist nicht verfügbar
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BZT52C39 BZT52C2V4%20SERIES_G1804.pdf
BZT52C39
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
Produkt ist nicht verfügbar
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BZT52C39-G BZT52C2V4-G%20SERIES_C2007.pdf
BZT52C39-G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
Produkt ist nicht verfügbar
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BZT52C39K BZT52C2V7K%20SERIES_G2402.pdf
BZT52C39K
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Produkt ist nicht verfügbar
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BZX55C4V3 BZX55C2V0%20SERIES_E2301.pdf
BZX55C4V3
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Produkt ist nicht verfügbar
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BZT52B15SH RRG BZT52B2V4S%20SERIES_I2411.pdf
BZT52B15SH RRG
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323, 200MW, 2%, 15V, ZENER D
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.086 EUR
9000+0.073 EUR
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BZT52B15SH RRG BZT52B2V4S%20SERIES_I2411.pdf
BZT52B15SH RRG
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323, 200MW, 2%, 15V, ZENER D
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Qualification: AEC-Q101
auf Bestellung 11999 Stücke:
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AnzahlPrivatkunde
50+0.42 EUR
81+0.26 EUR
113+0.19 EUR
130+0.17 EUR
500+0.12 EUR
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TSCDM08120G2H pdf.php?pn=TSCDM08120G2H
TSCDM08120G2H
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 1200V, AUTOMOTIVE, SIC SCHOT
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 39pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Max: 8 A
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+2.96 EUR
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TSCDM08120G2H pdf.php?pn=TSCDM08120G2H
TSCDM08120G2H
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 1200V, AUTOMOTIVE, SIC SCHOT
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 39pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Max: 8 A
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.95 EUR
10+5.9 EUR
100+4.19 EUR
500+3.61 EUR
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TSCDT08120G2H pdf.php?pn=TSCDT08120G2H
TSCDT08120G2H
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 1200V, AUTOMOTIVE, SIC SCHOT
Packaging: Tube
Package / Case: TO-220-2
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 39pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Supplier Device Package: TO-220AC
Grade: Automotive
Current - Max: 8 A
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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AnzahlPrivatkunde
3+10.12 EUR
10+6.74 EUR
100+4.81 EUR
500+3.99 EUR
1000+3.72 EUR
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HS2G HS2A SERIES_L2102.pdf
HS2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
3000+0.17 EUR
6000+0.15 EUR
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HS2G HS2A SERIES_L2102.pdf
HS2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
33+0.65 EUR
40+0.54 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
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TSM230N06CI C0G TSM230N06Cx_C0G.pdf
TSM230N06CI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 50A ITO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Produkt ist nicht verfügbar
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GBPC2510W GBPC15_25_35 SERIES_M2211.pdf
GBPC2510W
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 168 Stücke:
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3+8.84 EUR
10+5.83 EUR
50+4.55 EUR
100+4.13 EUR
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SF34G-A SF31G-A SERIES_B2105.pdf
SF34G-A
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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