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SMCJ26AH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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TSM8N80CZ C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 41nC
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SMBJ16CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 24.2A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 24.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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TSF40H200C C0G TSF40H200C C0G TAIWAN SEMICONDUCTOR TSF40H100C%20SERIES_B14.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20Ax2; TO220FP; Ufmax: 0.8V
Max. off-state voltage: 200V
Max. forward voltage: 0.8V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220FP
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TSM048NB06LCR RLG TSM048NB06LCR RLG TAIWAN SEMICONDUCTOR TSM048NB06LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Drain-source voltage: 60V
Drain current: 16A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tape
Gate charge: 105nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56U
auf Bestellung 39 Stücke:
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25+2.92 EUR
28+2.62 EUR
35+2.09 EUR
37+1.97 EUR
Mindestbestellmenge: 25
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TQM043NH04LCR RLG TAIWAN SEMICONDUCTOR TQM043NH04LCR_C2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 100W; PDFN56U
Drain-source voltage: 40V
Drain current: 54A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: tape
Gate charge: 42nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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TSM025NB04LCR RLG TAIWAN SEMICONDUCTOR TSM025NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tape
Kind of channel: enhancement
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TQM019NH04LCR RLG TAIWAN SEMICONDUCTOR TQM019NH04LCR_B2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PDFN56U
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tape
Kind of channel: enhancement
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TQM025NH04LCR RLG TAIWAN SEMICONDUCTOR TQM025NH04LCR_B2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tape
Gate charge: 63.3nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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TQM032NH04LCR RLG TAIWAN SEMICONDUCTOR TQM032NH04LCR_C2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 115W; PDFN56U
Drain-source voltage: 40V
Drain current: 81A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Kind of package: tape
Gate charge: 50nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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TQM056NH04LCR RLG TAIWAN SEMICONDUCTOR TQM056NH04LCR_C2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 78.9W; PDFN56U
Drain-source voltage: 40V
Drain current: 54A
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 78.9W
Polarisation: unipolar
Kind of package: tape
Gate charge: 30.4nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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TQM070NH04LCR RLG TAIWAN SEMICONDUCTOR TQM070NH04LCR_D2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 46.8W; PDFN56U
Drain-source voltage: 40V
Drain current: 54A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 46.8W
Polarisation: unipolar
Kind of package: tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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TSM033NB04LCR RLG TAIWAN SEMICONDUCTOR TSM033NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 36W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tape
Kind of channel: enhancement
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TSM070NB04LCR RLG TAIWAN SEMICONDUCTOR TSM070NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Drain-source voltage: 40V
Drain current: 15A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tape
Gate charge: 39nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56U
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TSM110NB04LCR RLG TAIWAN SEMICONDUCTOR TSM110NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Drain-source voltage: 40V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 23W
Polarisation: unipolar
Kind of package: tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56
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TSM150NB04LCR RLG TAIWAN SEMICONDUCTOR TSM150NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Drain-source voltage: 40V
Drain current: 10A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Kind of package: tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56
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BZX85C6V2 R0G BZX85C6V2 R0G TAIWAN SEMICONDUCTOR BZX85C3V3 SERIES_H2301.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.2V; 35mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 35mA
auf Bestellung 200 Stücke:
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BZX55C22 R0G BZX55C22 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Kind of package: reel; tape
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BZX55C20 R0G BZX55C20 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Kind of package: reel; tape
auf Bestellung 1120 Stücke:
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358+0.2 EUR
506+0.14 EUR
837+0.086 EUR
1120+0.064 EUR
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BZX55C2V7 R0G BZX55C2V7 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
auf Bestellung 585 Stücke:
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358+0.2 EUR
496+0.14 EUR
585+0.12 EUR
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BZX55C2V7 R0 BZX55C2V7 R0 TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2CBBBA164AE80C4&compId=BZX55C10-R0.pdf?ci_sign=045e18723e6acc46155f4564cf3b2b5029e24ad3 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
auf Bestellung 530 Stücke:
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BZX55C27 R0G BZX55C27 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 27V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 990 Stücke:
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990+0.073 EUR
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SMAJ64A TAIWAN SEMICONDUCTOR SMAJ SERIES_U2102.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 71.1V; 3.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1V
Max. forward impulse current: 3.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMAJ
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ES1CL TAIWAN SEMICONDUCTOR ES1AL SERIES_L2103.pdf Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 10000 Stücke:
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10000+0.15 EUR
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MBR760 MBR760 TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1EE586999771DCBE0469&compId=MBR760.pdf?ci_sign=2dd4c122c7137a3dbf18e007efdc1abb4e2da2f9 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. load current: 15A
Max. forward impulse current: 150A
Kind of package: tube
auf Bestellung 2 Stücke:
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MBR760 TAIWAN SEMICONDUCTOR MBR760(MBRB760)%20N0721%20REV.A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. load current: 15A
Max. forward impulse current: 150A
Kind of package: tube
auf Bestellung 95 Stücke:
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62+1.16 EUR
75+0.96 EUR
95+0.76 EUR
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SMBJ13A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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BZT52C18 RHG BZT52C18 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
auf Bestellung 680 Stücke:
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680+0.11 EUR
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TSM033NB04CR RLG TAIWAN SEMICONDUCTOR TSM033NB04CR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 36W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: tape
Kind of channel: enhancement
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TSM035NB04CZ C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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TSM035NB04LCZ C0G TAIWAN SEMICONDUCTOR TSM035NB04LCZ_A2010.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
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TSM025NB04CR RLG TAIWAN SEMICONDUCTOR TSMxxxNB0x_Newsletter.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: tape
Kind of channel: enhancement
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TSM60NE069CIT C0G TAIWAN SEMICONDUCTOR TSM60NE069CIT_A2403.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 89W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 89W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
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TSM60NE069PW C0G TAIWAN SEMICONDUCTOR TSM60NE069PW_A2403.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
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SMBJ13CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 29A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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S3MBH TAIWAN SEMICONDUCTOR S3ABH SERIES_B2207.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Application: automotive industry
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HS3MBH TAIWAN SEMICONDUCTOR HS3ABH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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SMCJ43CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷52.8V; 22A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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BZY55B3V0 RYG BZY55B3V0 RYG TAIWAN SEMICONDUCTOR BZY55B2V4%20SERIES_C1612.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; 0805; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: 0805
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 4µA
Zener current: 5mA
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
430+0.17 EUR
Mindestbestellmenge: 430
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BZS55C3V0 RXG BZS55C3V0 RXG TAIWAN SEMICONDUCTOR BZS55C2V4%20SERIES_D1612.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: 1206
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 4µA
Zener current: 5mA
auf Bestellung 1170 Stücke:
Lieferzeit 14-21 Tag (e)
750+0.096 EUR
1170+0.061 EUR
Mindestbestellmenge: 750
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BZX55C3V0 R0G BZX55C3V0 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; reel,tape; DO35; single diode; Ir: 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 4µA
Zener current: 5mA
auf Bestellung 738 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
610+0.12 EUR
738+0.097 EUR
Mindestbestellmenge: 417
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BZT52C3V0S R9G BZT52C3V0S R9G TAIWAN SEMICONDUCTOR BZT52C2V4S SERIES_J2212.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 9µA
Zener current: 5mA
auf Bestellung 6955 Stücke:
Lieferzeit 14-21 Tag (e)
880+0.082 EUR
975+0.073 EUR
1105+0.065 EUR
1155+0.062 EUR
Mindestbestellmenge: 880
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MBR1045 MBR1045 TAIWAN SEMICONDUCTOR MBR1045%20N0615%20REV.A.pdf littelfuse_power_semiconductor_schottky_diode_mbr1045_datasheet.pdf?assetguid=161372d2-6740-425c-9996-267cb4ce6a3a FAIRS45617-1.pdf?t.download=true&u=5oefqw mbr1035-d.pdf MBR%28B%291035_45.pdf ds23009.pdf MBR1035 SERIES_M2103.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Case: TO220AC
Forward voltage at If: 840mV
Produkt ist nicht verfügbar
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SMDJ36AH TAIWAN SEMICONDUCTOR Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40V; 51.6A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 51.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Application: automotive industry
Produkt ist nicht verfügbar
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SMDJ36CAH TAIWAN SEMICONDUCTOR pdf.php?pn=SMDJ36CAH Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40V; 51.6A; bidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 51.6A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Application: automotive industry
Produkt ist nicht verfügbar
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5.0SMDJ36A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40V; 86.1A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 86.1A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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SMCJ33A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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SMCJ33AH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Produkt ist nicht verfügbar
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SMAJ24A TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
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MUR140S TAIWAN SEMICONDUCTOR MUR105S SERIES_L2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: SMB
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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MUR140SH TAIWAN SEMICONDUCTOR MUR105SH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: SMB
Application: automotive industry
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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TLD5S10AH TAIWAN SEMICONDUCTOR TLD5S10AH SERIES_D2103.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 3.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 212A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD5S
Produkt ist nicht verfügbar
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TLD6S10AH TAIWAN SEMICONDUCTOR TLD6S10AH SERIES_D2103.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 271A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD6S
Produkt ist nicht verfügbar
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TLD8S10AH TAIWAN SEMICONDUCTOR TLD8S10AH SERIES_E2310.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 388A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD8S
Produkt ist nicht verfügbar
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BZX55B4V7 A0G BZX55B4V7 A0G TAIWAN SEMICONDUCTOR BZX55B2V4%20SERIES_F1610.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; DO35; single diode; Ir: 500nA
Mounting: THT
Case: DO35
Tolerance: ±2%
Zener current: 5mA
Leakage current: 0.5µA
Power dissipation: 0.5W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 4.7V
auf Bestellung 965 Stücke:
Lieferzeit 14-21 Tag (e)
965+0.074 EUR
Mindestbestellmenge: 965
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BZY55B4V3 RYG BZY55B4V3 RYG TAIWAN SEMICONDUCTOR BZY55B2V4%20SERIES_C1612.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; 0805; single diode
Mounting: SMD
Case: 0805
Tolerance: ±2%
Zener current: 5mA
Leakage current: 1µA
Power dissipation: 0.5W
Type of diode: Zener
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 4.3V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
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BZY55B4V3 RBG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; 0805; single diode
Mounting: SMD
Case: 0805
Tolerance: ±2%
Zener current: 5mA
Leakage current: 1µA
Power dissipation: 0.5W
Type of diode: Zener
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 4.3V
Produkt ist nicht verfügbar
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BZY55B4V7 RBG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; 0805; single diode
Mounting: SMD
Case: 0805
Tolerance: ±2%
Zener current: 5mA
Leakage current: 0.5µA
Power dissipation: 0.5W
Type of diode: Zener
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 4.7V
Produkt ist nicht verfügbar
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SR510 TAIWAN SEMICONDUCTOR SR502 SERIES_J2105.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201AD
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Produkt ist nicht verfügbar
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US1G TAIWAN SEMICONDUCTOR us1a.pdf US1A SERIES_N2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Capacitance: 10pF
Max. forward impulse current: 30A
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
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SMCJ26AH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Produkt ist nicht verfügbar
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TSM8N80CZ C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 41nC
Produkt ist nicht verfügbar
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SMBJ16CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 24.2A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 24.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
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TSF40H200C C0G TSF40H100C%20SERIES_B14.pdf
TSF40H200C C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20Ax2; TO220FP; Ufmax: 0.8V
Max. off-state voltage: 200V
Max. forward voltage: 0.8V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
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TSM048NB06LCR RLG TSM048NB06LCR_B1804.pdf
TSM048NB06LCR RLG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Drain-source voltage: 60V
Drain current: 16A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tape
Gate charge: 105nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56U
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
28+2.62 EUR
35+2.09 EUR
37+1.97 EUR
Mindestbestellmenge: 25
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TQM043NH04LCR RLG TQM043NH04LCR_C2309.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 100W; PDFN56U
Drain-source voltage: 40V
Drain current: 54A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: tape
Gate charge: 42nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
Produkt ist nicht verfügbar
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TSM025NB04LCR RLG TSM025NB04LCR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TQM019NH04LCR RLG TQM019NH04LCR_B2309.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PDFN56U
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TQM025NH04LCR RLG TQM025NH04LCR_B2309.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tape
Gate charge: 63.3nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
Produkt ist nicht verfügbar
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TQM032NH04LCR RLG TQM032NH04LCR_C2309.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 115W; PDFN56U
Drain-source voltage: 40V
Drain current: 81A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Kind of package: tape
Gate charge: 50nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
Produkt ist nicht verfügbar
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TQM056NH04LCR RLG TQM056NH04LCR_C2309.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 78.9W; PDFN56U
Drain-source voltage: 40V
Drain current: 54A
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 78.9W
Polarisation: unipolar
Kind of package: tape
Gate charge: 30.4nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
Produkt ist nicht verfügbar
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TQM070NH04LCR RLG TQM070NH04LCR_D2309.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 46.8W; PDFN56U
Drain-source voltage: 40V
Drain current: 54A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 46.8W
Polarisation: unipolar
Kind of package: tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
Produkt ist nicht verfügbar
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TSM033NB04LCR RLG TSM033NB04LCR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 36W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM070NB04LCR RLG TSM070NB04LCR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Drain-source voltage: 40V
Drain current: 15A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tape
Gate charge: 39nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56U
Produkt ist nicht verfügbar
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TSM110NB04LCR RLG TSM110NB04LCR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Drain-source voltage: 40V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 23W
Polarisation: unipolar
Kind of package: tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56
Produkt ist nicht verfügbar
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TSM150NB04LCR RLG TSM150NB04LCR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Drain-source voltage: 40V
Drain current: 10A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Kind of package: tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56
Produkt ist nicht verfügbar
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BZX85C6V2 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C6V2 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.2V; 35mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 35mA
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
Mindestbestellmenge: 200
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BZX55C22 R0G
BZX55C22 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Kind of package: reel; tape
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
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BZX55C20 R0G
BZX55C20 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Kind of package: reel; tape
auf Bestellung 1120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
506+0.14 EUR
837+0.086 EUR
1120+0.064 EUR
Mindestbestellmenge: 358
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BZX55C2V7 R0G
BZX55C2V7 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
auf Bestellung 585 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
496+0.14 EUR
585+0.12 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
BZX55C2V7 R0 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2CBBBA164AE80C4&compId=BZX55C10-R0.pdf?ci_sign=045e18723e6acc46155f4564cf3b2b5029e24ad3
BZX55C2V7 R0
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
530+0.13 EUR
Mindestbestellmenge: 530
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BZX55C27 R0G
BZX55C27 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 27V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
990+0.073 EUR
Mindestbestellmenge: 990
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SMAJ64A SMAJ SERIES_U2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 71.1V; 3.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1V
Max. forward impulse current: 3.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
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ES1CL ES1AL SERIES_L2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.15 EUR
Mindestbestellmenge: 10000
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MBR760 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586999771DCBE0469&compId=MBR760.pdf?ci_sign=2dd4c122c7137a3dbf18e007efdc1abb4e2da2f9
MBR760
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. load current: 15A
Max. forward impulse current: 150A
Kind of package: tube
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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MBR760 MBR760(MBRB760)%20N0721%20REV.A.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. load current: 15A
Max. forward impulse current: 150A
Kind of package: tube
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
75+0.96 EUR
95+0.76 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ13A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Produkt ist nicht verfügbar
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BZT52C18 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C18 RHG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
auf Bestellung 680 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
680+0.11 EUR
Mindestbestellmenge: 680
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TSM033NB04CR RLG TSM033NB04CR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 36W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM035NB04CZ C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM035NB04LCZ C0G TSM035NB04LCZ_A2010.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM025NB04CR RLG TSMxxxNB0x_Newsletter.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM60NE069CIT C0G TSM60NE069CIT_A2403.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 89W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 89W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM60NE069PW C0G TSM60NE069PW_A2403.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMBJ13CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 29A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
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S3MBH S3ABH SERIES_B2207.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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HS3MBH HS3ABH SERIES_A2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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SMCJ43CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷52.8V; 22A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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BZY55B3V0 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B3V0 RYG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; 0805; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: 0805
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 4µA
Zener current: 5mA
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
430+0.17 EUR
Mindestbestellmenge: 430
Im Einkaufswagen  Stück im Wert von  UAH
BZS55C3V0 RXG BZS55C2V4%20SERIES_D1612.pdf
BZS55C3V0 RXG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: 1206
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 4µA
Zener current: 5mA
auf Bestellung 1170 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
750+0.096 EUR
1170+0.061 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
BZX55C3V0 R0G
BZX55C3V0 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; reel,tape; DO35; single diode; Ir: 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 4µA
Zener current: 5mA
auf Bestellung 738 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
610+0.12 EUR
738+0.097 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C3V0S R9G BZT52C2V4S SERIES_J2212.pdf
BZT52C3V0S R9G
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 9µA
Zener current: 5mA
auf Bestellung 6955 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
880+0.082 EUR
975+0.073 EUR
1105+0.065 EUR
1155+0.062 EUR
Mindestbestellmenge: 880
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MBR1045 MBR1045%20N0615%20REV.A.pdf littelfuse_power_semiconductor_schottky_diode_mbr1045_datasheet.pdf?assetguid=161372d2-6740-425c-9996-267cb4ce6a3a FAIRS45617-1.pdf?t.download=true&u=5oefqw mbr1035-d.pdf MBR%28B%291035_45.pdf ds23009.pdf MBR1035 SERIES_M2103.pdf
MBR1045
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Case: TO220AC
Forward voltage at If: 840mV
Produkt ist nicht verfügbar
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SMDJ36AH
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40V; 51.6A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 51.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Application: automotive industry
Produkt ist nicht verfügbar
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SMDJ36CAH pdf.php?pn=SMDJ36CAH
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40V; 51.6A; bidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 51.6A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Application: automotive industry
Produkt ist nicht verfügbar
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5.0SMDJ36A littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40V; 86.1A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 86.1A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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SMCJ33A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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SMCJ33AH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Produkt ist nicht verfügbar
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SMAJ24A tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
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MUR140S MUR105S SERIES_L2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: SMB
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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MUR140SH MUR105SH SERIES_A2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: SMB
Application: automotive industry
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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TLD5S10AH TLD5S10AH SERIES_D2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 3.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 212A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD5S
Produkt ist nicht verfügbar
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TLD6S10AH TLD6S10AH SERIES_D2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 271A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD6S
Produkt ist nicht verfügbar
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TLD8S10AH TLD8S10AH SERIES_E2310.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 388A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD8S
Produkt ist nicht verfügbar
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BZX55B4V7 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B4V7 A0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; DO35; single diode; Ir: 500nA
Mounting: THT
Case: DO35
Tolerance: ±2%
Zener current: 5mA
Leakage current: 0.5µA
Power dissipation: 0.5W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 4.7V
auf Bestellung 965 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
965+0.074 EUR
Mindestbestellmenge: 965
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BZY55B4V3 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B4V3 RYG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; 0805; single diode
Mounting: SMD
Case: 0805
Tolerance: ±2%
Zener current: 5mA
Leakage current: 1µA
Power dissipation: 0.5W
Type of diode: Zener
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 4.3V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
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BZY55B4V3 RBG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; 0805; single diode
Mounting: SMD
Case: 0805
Tolerance: ±2%
Zener current: 5mA
Leakage current: 1µA
Power dissipation: 0.5W
Type of diode: Zener
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 4.3V
Produkt ist nicht verfügbar
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BZY55B4V7 RBG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; 0805; single diode
Mounting: SMD
Case: 0805
Tolerance: ±2%
Zener current: 5mA
Leakage current: 0.5µA
Power dissipation: 0.5W
Type of diode: Zener
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 4.7V
Produkt ist nicht verfügbar
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SR510 SR502 SERIES_J2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201AD
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Produkt ist nicht verfügbar
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US1G us1a.pdf US1A SERIES_N2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Capacitance: 10pF
Max. forward impulse current: 30A
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
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