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MBRAD1560DH TAIWAN SEMICONDUCTOR MBRAD1560DH_A2303.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 7.5Ax2; reel,tape
Case: thinDPAK
Mounting: SMD
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Kind of package: reel; tape
Max. forward voltage: 0.75V
Load current: 7.5A x2
Max. off-state voltage: 60V
Application: automotive industry
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MBRAD1560H TAIWAN SEMICONDUCTOR MBRAD1560H_A2303.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 15A; reel,tape
Case: thinDPAK
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Kind of package: reel; tape
Max. forward voltage: 0.75V
Load current: 15A
Max. off-state voltage: 60V
Application: automotive industry
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P6SMB6.8CA P6SMB6.8CA TAIWAN SEMICONDUCTOR P6SMB SERIES_Q2209.pdf description Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 322 Stücke:
Lieferzeit 14-21 Tag (e)
322+0.23 EUR
Mindestbestellmenge: 322
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P4KE100A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 95V; 3A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 85.5V
Breakdown voltage: 95V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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P4KE100CA TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 95V; 3A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 85.5V
Breakdown voltage: 95V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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TSUP8H100H TAIWAN SEMICONDUCTOR pdf.php?pn=TSUP8H100H Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 8A; reel,tape
Case: TO277A
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 8A
Max. off-state voltage: 100V
Application: automotive industry
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BZT52C4V3 RHG BZT52C4V3 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
auf Bestellung 39 Stücke:
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TSM3N80CH C5G TAIWAN SEMICONDUCTOR TSM3N80_F1706.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; IPAK
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Gate charge: 19nC
Power dissipation: 94W
On-state resistance: 4.2Ω
Gate-source voltage: ±30V
Case: IPAK
Kind of package: tube
Kind of channel: enhancement
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TSM3N80CP ROG TAIWAN SEMICONDUCTOR TSM3N80_F1706.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; DPAK
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Gate charge: 19nC
Power dissipation: 94W
On-state resistance: 4.2Ω
Gate-source voltage: ±30V
Case: DPAK
Kind of package: tape
Kind of channel: enhancement
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TSM3N80CI C0G TSM3N80CI C0G TAIWAN SEMICONDUCTOR TSM3N80_F1706.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 32W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Gate charge: 19nC
Power dissipation: 32W
On-state resistance: 4.2Ω
Gate-source voltage: ±30V
Case: TO220FP
Kind of package: tube
Kind of channel: enhancement
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TSM3N80CZ C0G TAIWAN SEMICONDUCTOR TSM3N80_F1706.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; TO220-3
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Gate charge: 19nC
Power dissipation: 94W
On-state resistance: 4.2Ω
Gate-source voltage: ±30V
Case: TO220-3
Kind of package: tube
Kind of channel: enhancement
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BZD27C18P TAIWAN SEMICONDUCTOR BZD27C SERIES_AB2103.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; subSMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: subSMA
Semiconductor structure: single diode
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BZD27C18PW TAIWAN SEMICONDUCTOR BZD27C11PW SERIES_D2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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BZD27C18PWH TAIWAN SEMICONDUCTOR BZD27C11PWH SERIES_B2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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TS1935BCX5 RFG TS1935BCX5 RFG TAIWAN SEMICONDUCTOR Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷5.5VDC; Uout: 3÷27VDC; 1.9A; SOT25
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...5.5V DC
Output voltage: 3...27V DC
Output current: 1.9A
Case: SOT25
Mounting: SMD
Frequency: 1.2MHz
Topology: boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Duty cycle factor: 0...87%
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.77 EUR
45+1.6 EUR
51+1.42 EUR
Mindestbestellmenge: 41
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TSM8N80CZ C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 41nC
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MBR1545CTH TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.93 EUR
Mindestbestellmenge: 100
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BZT52B5V6-G RHG BZT52B5V6-G RHG TAIWAN SEMICONDUCTOR BZT52B2V4-G SERIES_H2002.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 5.6V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 5mA
auf Bestellung 5524 Stücke:
Lieferzeit 14-21 Tag (e)
440+0.16 EUR
805+0.089 EUR
1010+0.071 EUR
1045+0.069 EUR
Mindestbestellmenge: 440
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BZT52B5V6S RRG BZT52B5V6S RRG TAIWAN SEMICONDUCTOR BZT52B2V4S SERIES_H2212.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.9µA
Zener current: 5mA
auf Bestellung 1205 Stücke:
Lieferzeit 14-21 Tag (e)
835+0.086 EUR
1145+0.063 EUR
1205+0.059 EUR
Mindestbestellmenge: 835
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BZX55B5V6 A0G BZX55B5V6 A0G TAIWAN SEMICONDUCTOR BZX55B2V4%20SERIES_F1610.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: THT
Tolerance: ±2%
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+0.089 EUR
Mindestbestellmenge: 800
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SMCJ30A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
auf Bestellung 15 Stücke:
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15+4.76 EUR
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TSD30H120CW MNG TAIWAN SEMICONDUCTOR TSD30H100CW%20SERIES_C15.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 120V; 30A
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.84V
Load current: 30A
Max. off-state voltage: 120V
Max. forward impulse current: 200A
Semiconductor structure: common cathode; double
Case: D2PAK
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KBU1006G KBU1006G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 46 Stücke:
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28+2.65 EUR
41+1.76 EUR
46+1.56 EUR
Mindestbestellmenge: 28
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KBU1007G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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DBL207G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9B87C75E9EC0D6&compId=DBL201G_ser.pdf?ci_sign=f230df7a06e097c54b6e99b72db9c7e29b94bb02 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; DIP
Case: DBL
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Electrical mounting: THT
Version: DIP
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HS1ML HS1ML TAIWAN SEMICONDUCTOR HS1AL SERIES_C2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; subSMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: subSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
auf Bestellung 337 Stücke:
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167+0.43 EUR
257+0.28 EUR
337+0.21 EUR
Mindestbestellmenge: 167
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HS1MAL TAIWAN SEMICONDUCTOR HS1DAL SERIES_D2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; thinSMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
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HS1MALH TAIWAN SEMICONDUCTOR HS1DALH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; thinSMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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HS1MH TAIWAN SEMICONDUCTOR HS1AH SERIES_B2401.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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HS1MLW TAIWAN SEMICONDUCTOR HS1DLW SERIES_C2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SOD123W; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.7V
Kind of package: reel; tape
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HS1MLWH TAIWAN SEMICONDUCTOR HS1DLWH SERIES_A2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SOD123W; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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MBRI30100CT TAIWAN SEMICONDUCTOR MBRI30100CT_F2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; I2PAK; Ufmax: 940mV
Type of diode: Schottky rectifying
Case: I2PAK
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.94V
Kind of package: tube
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P6KE82A R0 P6KE82A R0 TAIWAN SEMICONDUCTOR P6KE_SER.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 82V; 5.5A; unidirectional; ±5%; DO15; reel,tape
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Manufacturer series: P6KE
Tolerance: ±5%
auf Bestellung 4380 Stücke:
Lieferzeit 14-21 Tag (e)
1195+0.06 EUR
1250+0.057 EUR
1330+0.054 EUR
1380+0.052 EUR
Mindestbestellmenge: 1195
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SMAJ188A TAIWAN SEMICONDUCTOR SMAJ SERIES_U2102.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209V; 0.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 0.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
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SMAJ188CA TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_smaj_datasheet.pdf.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209V; 0.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 0.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
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RS1B TAIWAN SEMICONDUCTOR RS1A-RS1M%20N0988%20REV.B.pdf rs1m-d.pdf RS1A SERIES_M2304.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
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T15JA05G-K TAIWAN SEMICONDUCTOR T15JA07G-K_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 208A
Case: TS-6PL
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 15A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 208A
Features of semiconductor devices: glass passivated
Leads: flat pin
Version: flat
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T15JA06G-K TAIWAN SEMICONDUCTOR T15JA07G-K_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 208A
Case: TS-6PL
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 15A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 208A
Features of semiconductor devices: glass passivated
Leads: flat pin
Version: flat
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T15JA07G-K TAIWAN SEMICONDUCTOR T15JA07G-K_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 208A
Case: TS-6PL
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 15A
Max. off-state voltage: 1kV
Max. forward impulse current: 208A
Features of semiconductor devices: glass passivated
Leads: flat pin
Version: flat
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SMAJ24CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
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MBR1045 MBR1045 TAIWAN SEMICONDUCTOR MBR1045%20N0615%20REV.A.pdf littelfuse_power_semiconductor_schottky_diode_mbr1045_datasheet.pdf?assetguid=161372d2-6740-425c-9996-267cb4ce6a3a FAIRS45617-1.pdf?t.download=true&u=5oefqw mbr1035-d.pdf MBR%28B%291035_45.pdf ds23009.pdf MBR1035 SERIES_M2103.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Case: TO220AC
Forward voltage at If: 840mV
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MBRF30200CT MBRF30200CT TAIWAN SEMICONDUCTOR littelfuse_power_semiconductor_schottky_diode_mbrf30200ct_datasheet.pdf?assetguid=326d14e5-aee8-4008-9c6a-fe82abc7599f Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Semiconductor structure: common cathode; double
Case: TO220FP
Mounting: THT
Type of diode: Schottky rectifying
Kind of package: tube
Max. forward voltage: 1.05V
Load current: 15A x2
Max. forward impulse current: 200A
Max. off-state voltage: 200V
auf Bestellung 77 Stücke:
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39+1.86 EUR
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MBR1660 MBR1660 TAIWAN SEMICONDUCTOR MBR1660.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
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MBR1660 MBR1660 TAIWAN SEMICONDUCTOR MBR1650-1660%20MBRB1650-1660%20%20N0728%20REV.A.pdf MBR1635%20-%2060.pdf FAIRS27511-1.pdf?t.download=true&u=5oefqw MBR1630_1660_Rev8.pdf MBR1635 SERIES_K2103.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
Produkt ist nicht verfügbar
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TESDU12V RGG TESDU12V RGG TAIWAN SEMICONDUCTOR TESDUxx.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 25W; 13V; bidirectional; reel,tape; Case: 0201
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Kind of package: reel; tape
Leakage current: 2µA
Breakdown voltage: 13V
Peak pulse power dissipation: 25W
Case - inch: 0201
Case - mm: 0603
auf Bestellung 122 Stücke:
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TESDU24V RGG TESDU24V RGG TAIWAN SEMICONDUCTOR TESDUxx.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 47W; 25V; bidirectional; reel,tape; Case: 0201
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Kind of package: reel; tape
Leakage current: 2µA
Breakdown voltage: 25V
Peak pulse power dissipation: 47W
Case - inch: 0201
Case - mm: 0603
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TS4448 RGG TAIWAN SEMICONDUCTOR TS4448 RG_H1612.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 9ns; 0603; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Capacitance: 9pF
Reverse recovery time: 9ns
Power dissipation: 0.15W
Features of semiconductor devices: fast switching
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TSM085NB03CV RGG TAIWAN SEMICONDUCTOR TSM085NB03CV_A2010.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1A; 52W; PDFN33
Case: PDFN33
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 8.5mΩ
Power dissipation: 52W
Drain current: 1A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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1N4007G 1N4007G TAIWAN SEMICONDUCTOR 1n4001-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 10pF
Features of semiconductor devices: glass passivated
auf Bestellung 1064 Stücke:
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218+0.33 EUR
285+0.25 EUR
341+0.21 EUR
697+0.1 EUR
1064+0.067 EUR
Mindestbestellmenge: 218
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TSM220NB06CR RLG TAIWAN SEMICONDUCTOR TSM220NB06CR_C2401.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
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1N5408G TAIWAN SEMICONDUCTOR 1n5400-d.pdf 1N5400G%20SERIES_K2105.pdf 1N5400G-1N5408G%20N1631%20REV.A.pdf 1N5400G SERIES_K2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD
Mounting: THT
Load current: 3A
Max. forward impulse current: 125A
Max. off-state voltage: 1kV
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZX84C10 RFG BZX84C10 RFG TAIWAN SEMICONDUCTOR BZX84C2V4%20SERIES_F2001.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Zener current: 5mA
auf Bestellung 971 Stücke:
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680+0.11 EUR
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SMAJ28A TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SK510B TAIWAN SEMICONDUCTOR SK510B%20N0950%20REV.B.pdf SK52BSERIESP2102.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD
Type of diode: Schottky rectifying
Mounting: SMD
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SMAJ48CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
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SMAJ20CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf SMAJ20CA00S0XV.pdf SMAJ20CA%20SMA.pdf smaj%20series(400w,5v_440v).pdf 824501201.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf SMAJ SERIES_U2102.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2V; 12.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
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BAT43W RHG TAIWAN SEMICONDUCTOR BAT42W SERIES_G1605.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
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P4SMA10A TAIWAN SEMICONDUCTOR tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; SMA; P4SMA
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Type of diode: TVS
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Peak pulse power dissipation: 0.4kW
Produkt ist nicht verfügbar
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DBLS201G TAIWAN SEMICONDUCTOR DBLS201G%20SERIES_J2103.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 2A
Max. forward voltage: 1.15V
Max. forward impulse current: 50A
Max. off-state voltage: 50V
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1.5KE16CA 1.5KE16CA TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_1_5ke_datasheet.pdf?assetguid=9d02c7d2-86a5-4bff-9251-966d6af02bf7 15ke68.pdf 1.5ke%20series(1500w,5.8v_408v).pdf 1.5KE%20SERIES%20N0209%20REV.E.pdf 1.5KE SERIES_O2104.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 16V; 67A; bidirectional; ±5%; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 67A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Tolerance: ±5%
Kind of package: reel; tape
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MBRAD1560DH MBRAD1560DH_A2303.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 7.5Ax2; reel,tape
Case: thinDPAK
Mounting: SMD
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Kind of package: reel; tape
Max. forward voltage: 0.75V
Load current: 7.5A x2
Max. off-state voltage: 60V
Application: automotive industry
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MBRAD1560H MBRAD1560H_A2303.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 15A; reel,tape
Case: thinDPAK
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Kind of package: reel; tape
Max. forward voltage: 0.75V
Load current: 15A
Max. off-state voltage: 60V
Application: automotive industry
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P6SMB6.8CA description P6SMB SERIES_Q2209.pdf
P6SMB6.8CA
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 322 Stücke:
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Anzahl Preis
322+0.23 EUR
Mindestbestellmenge: 322
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P4KE100A littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 95V; 3A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 85.5V
Breakdown voltage: 95V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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P4KE100CA littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 95V; 3A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 85.5V
Breakdown voltage: 95V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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TSUP8H100H pdf.php?pn=TSUP8H100H
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 8A; reel,tape
Case: TO277A
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 8A
Max. off-state voltage: 100V
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C4V3 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C4V3 RHG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
auf Bestellung 39 Stücke:
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TSM3N80CH C5G TSM3N80_F1706.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; IPAK
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Gate charge: 19nC
Power dissipation: 94W
On-state resistance: 4.2Ω
Gate-source voltage: ±30V
Case: IPAK
Kind of package: tube
Kind of channel: enhancement
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TSM3N80CP ROG TSM3N80_F1706.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; DPAK
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Gate charge: 19nC
Power dissipation: 94W
On-state resistance: 4.2Ω
Gate-source voltage: ±30V
Case: DPAK
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM3N80CI C0G TSM3N80_F1706.pdf
TSM3N80CI C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 32W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Gate charge: 19nC
Power dissipation: 32W
On-state resistance: 4.2Ω
Gate-source voltage: ±30V
Case: TO220FP
Kind of package: tube
Kind of channel: enhancement
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TSM3N80CZ C0G TSM3N80_F1706.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; TO220-3
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Gate charge: 19nC
Power dissipation: 94W
On-state resistance: 4.2Ω
Gate-source voltage: ±30V
Case: TO220-3
Kind of package: tube
Kind of channel: enhancement
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BZD27C18P BZD27C SERIES_AB2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; subSMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: subSMA
Semiconductor structure: single diode
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BZD27C18PW BZD27C11PW SERIES_D2203.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
Produkt ist nicht verfügbar
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BZD27C18PWH BZD27C11PWH SERIES_B2203.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
Produkt ist nicht verfügbar
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TS1935BCX5 RFG
TS1935BCX5 RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷5.5VDC; Uout: 3÷27VDC; 1.9A; SOT25
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...5.5V DC
Output voltage: 3...27V DC
Output current: 1.9A
Case: SOT25
Mounting: SMD
Frequency: 1.2MHz
Topology: boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Duty cycle factor: 0...87%
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
45+1.6 EUR
51+1.42 EUR
Mindestbestellmenge: 41
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TSM8N80CZ C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 41nC
Produkt ist nicht verfügbar
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MBR1545CTH
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.93 EUR
Mindestbestellmenge: 100
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BZT52B5V6-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B5V6-G RHG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 5.6V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 5mA
auf Bestellung 5524 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
440+0.16 EUR
805+0.089 EUR
1010+0.071 EUR
1045+0.069 EUR
Mindestbestellmenge: 440
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BZT52B5V6S RRG BZT52B2V4S SERIES_H2212.pdf
BZT52B5V6S RRG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.9µA
Zener current: 5mA
auf Bestellung 1205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
835+0.086 EUR
1145+0.063 EUR
1205+0.059 EUR
Mindestbestellmenge: 835
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BZX55B5V6 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B5V6 A0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: THT
Tolerance: ±2%
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+0.089 EUR
Mindestbestellmenge: 800
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SMCJ30A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.76 EUR
Mindestbestellmenge: 15
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TSD30H120CW MNG TSD30H100CW%20SERIES_C15.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 120V; 30A
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.84V
Load current: 30A
Max. off-state voltage: 120V
Max. forward impulse current: 200A
Semiconductor structure: common cathode; double
Case: D2PAK
Produkt ist nicht verfügbar
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KBU1006G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486
KBU1006G
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.65 EUR
41+1.76 EUR
46+1.56 EUR
Mindestbestellmenge: 28
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KBU1007G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DBL207G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9B87C75E9EC0D6&compId=DBL201G_ser.pdf?ci_sign=f230df7a06e097c54b6e99b72db9c7e29b94bb02
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; DIP
Case: DBL
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Electrical mounting: THT
Version: DIP
Produkt ist nicht verfügbar
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HS1ML HS1AL SERIES_C2103.pdf
HS1ML
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; subSMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: subSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
auf Bestellung 337 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
257+0.28 EUR
337+0.21 EUR
Mindestbestellmenge: 167
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HS1MAL HS1DAL SERIES_D2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; thinSMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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HS1MALH HS1DALH SERIES_B2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; thinSMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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HS1MH HS1AH SERIES_B2401.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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HS1MLW HS1DLW SERIES_C2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SOD123W; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.7V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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HS1MLWH HS1DLWH SERIES_A2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SOD123W; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MBRI30100CT MBRI30100CT_F2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; I2PAK; Ufmax: 940mV
Type of diode: Schottky rectifying
Case: I2PAK
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.94V
Kind of package: tube
Produkt ist nicht verfügbar
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P6KE82A R0 P6KE_SER.pdf
P6KE82A R0
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 82V; 5.5A; unidirectional; ±5%; DO15; reel,tape
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Manufacturer series: P6KE
Tolerance: ±5%
auf Bestellung 4380 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1195+0.06 EUR
1250+0.057 EUR
1330+0.054 EUR
1380+0.052 EUR
Mindestbestellmenge: 1195
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SMAJ188A SMAJ SERIES_U2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209V; 0.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 0.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMAJ188CA littelfuse_tvs_diode_smaj_datasheet.pdf.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209V; 0.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 0.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
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RS1B RS1A-RS1M%20N0988%20REV.B.pdf rs1m-d.pdf RS1A SERIES_M2304.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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T15JA05G-K T15JA07G-K_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 208A
Case: TS-6PL
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 15A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 208A
Features of semiconductor devices: glass passivated
Leads: flat pin
Version: flat
Produkt ist nicht verfügbar
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T15JA06G-K T15JA07G-K_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 208A
Case: TS-6PL
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 15A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 208A
Features of semiconductor devices: glass passivated
Leads: flat pin
Version: flat
Produkt ist nicht verfügbar
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T15JA07G-K T15JA07G-K_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 208A
Case: TS-6PL
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 15A
Max. off-state voltage: 1kV
Max. forward impulse current: 208A
Features of semiconductor devices: glass passivated
Leads: flat pin
Version: flat
Produkt ist nicht verfügbar
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SMAJ24CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MBR1045 MBR1045%20N0615%20REV.A.pdf littelfuse_power_semiconductor_schottky_diode_mbr1045_datasheet.pdf?assetguid=161372d2-6740-425c-9996-267cb4ce6a3a FAIRS45617-1.pdf?t.download=true&u=5oefqw mbr1035-d.pdf MBR%28B%291035_45.pdf ds23009.pdf MBR1035 SERIES_M2103.pdf
MBR1045
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Case: TO220AC
Forward voltage at If: 840mV
Produkt ist nicht verfügbar
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MBRF30200CT littelfuse_power_semiconductor_schottky_diode_mbrf30200ct_datasheet.pdf?assetguid=326d14e5-aee8-4008-9c6a-fe82abc7599f
MBRF30200CT
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Semiconductor structure: common cathode; double
Case: TO220FP
Mounting: THT
Type of diode: Schottky rectifying
Kind of package: tube
Max. forward voltage: 1.05V
Load current: 15A x2
Max. forward impulse current: 200A
Max. off-state voltage: 200V
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.06 EUR
39+1.86 EUR
50+1.73 EUR
Mindestbestellmenge: 35
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MBR1660 MBR1660.pdf
MBR1660
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
Produkt ist nicht verfügbar
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MBR1660 MBR1650-1660%20MBRB1650-1660%20%20N0728%20REV.A.pdf MBR1635%20-%2060.pdf FAIRS27511-1.pdf?t.download=true&u=5oefqw MBR1630_1660_Rev8.pdf MBR1635 SERIES_K2103.pdf
MBR1660
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
Produkt ist nicht verfügbar
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TESDU12V RGG TESDUxx.pdf
TESDU12V RGG
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 25W; 13V; bidirectional; reel,tape; Case: 0201
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Kind of package: reel; tape
Leakage current: 2µA
Breakdown voltage: 13V
Peak pulse power dissipation: 25W
Case - inch: 0201
Case - mm: 0603
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
Mindestbestellmenge: 122
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TESDU24V RGG TESDUxx.pdf
TESDU24V RGG
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 47W; 25V; bidirectional; reel,tape; Case: 0201
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Kind of package: reel; tape
Leakage current: 2µA
Breakdown voltage: 25V
Peak pulse power dissipation: 47W
Case - inch: 0201
Case - mm: 0603
Produkt ist nicht verfügbar
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TS4448 RGG TS4448 RG_H1612.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 9ns; 0603; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Capacitance: 9pF
Reverse recovery time: 9ns
Power dissipation: 0.15W
Features of semiconductor devices: fast switching
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TSM085NB03CV RGG TSM085NB03CV_A2010.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1A; 52W; PDFN33
Case: PDFN33
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 8.5mΩ
Power dissipation: 52W
Drain current: 1A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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1N4007G 1n4001-d.pdf
1N4007G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 10pF
Features of semiconductor devices: glass passivated
auf Bestellung 1064 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
285+0.25 EUR
341+0.21 EUR
697+0.1 EUR
1064+0.067 EUR
Mindestbestellmenge: 218
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TSM220NB06CR RLG TSM220NB06CR_C2401.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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1N5408G 1n5400-d.pdf 1N5400G%20SERIES_K2105.pdf 1N5400G-1N5408G%20N1631%20REV.A.pdf 1N5400G SERIES_K2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD
Mounting: THT
Load current: 3A
Max. forward impulse current: 125A
Max. off-state voltage: 1kV
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZX84C10 RFG BZX84C2V4%20SERIES_F2001.pdf
BZX84C10 RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Zener current: 5mA
auf Bestellung 971 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
680+0.11 EUR
Mindestbestellmenge: 680
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SMAJ28A tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Produkt ist nicht verfügbar
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SK510B SK510B%20N0950%20REV.B.pdf SK52BSERIESP2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
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SMAJ48CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
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SMAJ20CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf SMAJ20CA00S0XV.pdf SMAJ20CA%20SMA.pdf smaj%20series(400w,5v_440v).pdf 824501201.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf SMAJ SERIES_U2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2V; 12.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAT43W RHG BAT42W SERIES_G1605.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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P4SMA10A tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; SMA; P4SMA
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Type of diode: TVS
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Peak pulse power dissipation: 0.4kW
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DBLS201G DBLS201G%20SERIES_J2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 2A
Max. forward voltage: 1.15V
Max. forward impulse current: 50A
Max. off-state voltage: 50V
Produkt ist nicht verfügbar
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1.5KE16CA littelfuse_tvs_diode_1_5ke_datasheet.pdf?assetguid=9d02c7d2-86a5-4bff-9251-966d6af02bf7 15ke68.pdf 1.5ke%20series(1500w,5.8v_408v).pdf 1.5KE%20SERIES%20N0209%20REV.E.pdf 1.5KE SERIES_O2104.pdf
1.5KE16CA
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 16V; 67A; bidirectional; ±5%; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 67A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
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