Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41725) > Seite 323 nach 696

Wählen Sie Seite:   [  << Vorherige Seite ]  1 69 138 207 276 318 319 320 321 322 323 324 325 326 327 328 345 414 483 552 621 690 696  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
VS-95PFR40T VS-95PFR40T Vishay General Semiconductor - Diodes Division vs-95pfrseries.pdf Description: DIODE STD REV 400V 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-95PFR40W VS-95PFR40W Vishay General Semiconductor - Diodes Division vs-95pfrseries.pdf Description: DIODE STD REV 400V 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-97PFR120 VS-97PFR120 Vishay General Semiconductor - Diodes Division vs-95pfrseries.pdf Description: DIODE STD REV 1200V 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-CPV362M4FPBF VS-CPV362M4FPBF Vishay General Semiconductor - Diodes Division vs-cpv362m4.pdf Description: IGBT MODULE 600V 8.8A 23W IMS-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-EMF050J60U Vishay General Semiconductor - Diodes Division VS-EMF050J60U.pdf Description: IGBT MOD 600V 88A 338W EMIPAK2
Power - Max: 338 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 88 A
Part Status: Obsolete
Supplier Device Package: EMIPAK2
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Operating Temperature: 150°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: EMIPAK2
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V
Current - Collector Cutoff (Max): 100 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETF075Y60U VS-ETF075Y60U Vishay General Semiconductor - Diodes Division vs-etf075y60u.pdf Description: IGBT MOD 600V 109A EMIPAK-2B
Input Capacitance (Cies) @ Vce: 4.44 nF @ 30 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 294 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench
Supplier Device Package: EMIPAK-2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.93V @ 15V, 75A
Operating Temperature: 175°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: EMIPAK-2B
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 60 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETL015Y120H VS-ETL015Y120H Vishay General Semiconductor - Diodes Division VS-ETL015Y120H.pdf Description: IGBT MOD 1200V 22A 89W EMIPAK-2B
Input Capacitance (Cies) @ Vce: 1.07 nF @ 30 V
Current - Collector Cutoff (Max): 75 µA
Power - Max: 89 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 22 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: EMIPAK-2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.03V @ 15V, 15A
Operating Temperature: 150°C (TJ)
Input: Standard
Mounting Type: Chassis Mount
Package / Case: EMIPAK-2B
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-FA38SA50LCP VS-FA38SA50LCP Vishay General Semiconductor - Diodes Division VS-FA38SA50LCP.pdf Description: MOSFET N-CH 500V 38A SOT-227
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-FA40SA50LC VS-FA40SA50LC Vishay General Semiconductor - Diodes Division vs-fa40sa50lc.pdf Description: MOSFET N-CH 500V 40A SOT-227
Produkt ist nicht verfügbar
 Mindestbestellmenge: 160 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-FA72SA50LC VS-FA72SA50LC Vishay General Semiconductor - Diodes Division vs-fa72sa50lc.pdf Description: MOSFET N-CH 500V 72A SOT-227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-FB180SA10P VS-FB180SA10P Vishay General Semiconductor - Diodes Division FB180SA10P.pdf Description: MOSFET N-CH 100V 180A SOT-227
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GA100NA60UP VS-GA100NA60UP Vishay General Semiconductor - Diodes Division VS-GA100NA60UP.pdf Description: IGBT MOD 600V 100A 250W SOT227
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 7.4 nF @ 30 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GA100TS60SFPBF Vishay General Semiconductor - Diodes Division VS-GA100TS60SFPbF.pdf Description: IGBT MOD 600V 220A INT-A-PAK
Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 780 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 220 A
IGBT Type: PT
Supplier Device Package: INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.28V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GA200HS60S1PBF Vishay General Semiconductor - Diodes Division Description: IGBT MODULE 600V 480A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 32.5 nF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GA200SA60SP VS-GA200SA60SP Vishay General Semiconductor - Diodes Division GA200SA60SP.pdf Description: IGBT MODULE 600V 781W SOT-227
Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 781 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Part Status: Obsolete
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 180 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GA200SA60UP VS-GA200SA60UP Vishay General Semiconductor - Diodes Division Description: IGBT MOD 600V 200A 500W SOT227
Input Capacitance (Cies) @ Vce: 16.5 nF @ 30 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 500 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 200 A
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GA200TH60S VS-GA200TH60S Vishay General Semiconductor - Diodes Division Description: IGBT MODULE 600V 260A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB100LH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 200A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB100NH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 200A INT-A-PAK
Input Capacitance (Cies) @ Vce: 8.58 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 833 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
Operating Temperature: 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB100TH120N VS-GB100TH120N Vishay General Semiconductor - Diodes Division Description: IGBT MODULE 1200V 200A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB100TH120U VS-GB100TH120U Vishay General Semiconductor - Diodes Division VS-GB100TH120U.pdf Description: IGBT MODULE 1200V 200A INT-A-PAK
Input Capacitance (Cies) @ Vce: 8.45 nF @ 20 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1136 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
IGBT Type: NPT
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB100TP120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 200A INT-A-PAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB100TP120U Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 150A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB100TS60NPBF Vishay General Semiconductor - Diodes Division VS-GB100TS60NPbF.pdf Description: IGBT MOD 600V 108A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB150LH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 300A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB150TH120N VS-GB150TH120N Vishay General Semiconductor - Diodes Division Description: IGBT MODULE 1200V 300A INT-A-PAK
Current - Collector (Ic) (Max): 300 A
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 150A
Operating Temperature: 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1008 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB150TH120U Vishay General Semiconductor - Diodes Division vs-gb150th120u.pdf Description: IGBT MOD 1200V 280A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB15XP120KTPBF Vishay General Semiconductor - Diodes Division VS-GB15XP120KTPBF.pdf Description: IGBT MODULE 1200V 30A 187W MTP
Input Capacitance (Cies) @ Vce: 1.95 nF @ 30 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 187 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
IGBT Type: NPT
Supplier Device Package: MTP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.66V @ 15V, 30A
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Configuration: Three Phase Inverter
Input: Standard
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB200LH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 370A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB200NH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 420A INT-A-PAK
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1562 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 420 A
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A (Typ)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB200TH120N VS-GB200TH120N Vishay General Semiconductor - Diodes Division Description: IGBT MODULE 1200V 360A INT-A-PAK
Input Capacitance (Cies) @ Vce: 14.9 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1136 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 360 A
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 200A
Operating Temperature: 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB200TH120U VS-GB200TH120U Vishay General Semiconductor - Diodes Division Description: IGBT MODULE 1200V 330A INT-A-PAK
Input Capacitance (Cies) @ Vce: 16.9 nF @ 30 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1316 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 330 A
Part Status: Obsolete
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 200A
Operating Temperature: 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB300AH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 620A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB300LH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 500A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB300NH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 500A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB300TH120N VS-GB300TH120N Vishay General Semiconductor - Diodes Division VS-GB300TH120N.pdf Description: IGBT MODULE 1200V 500A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB300TH120U Vishay General Semiconductor - Diodes Division VS-GB300TH120U.pdf Description: IGBT MOD 1200V 530A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB400AH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 650A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB400AH120U Vishay General Semiconductor - Diodes Division VS-GB400AH120U.pdf Description: IGBT MOD 1200V 550A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB400TH120N VS-GB400TH120N Vishay General Semiconductor - Diodes Division Description: IGBT MODULE 1200V 800A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB400TH120U Vishay General Semiconductor - Diodes Division VS-GB400TH120U.pdf Description: IGBT MOD 1200V 660A INT-A-PAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB50LP120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 100A INT-A-PAK
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 446 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Supplier Device Package: INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A (Typ)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB50TP120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 100A INT-A-PAK
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 446 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Supplier Device Package: INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB50YF120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 66A ECONO2 4PACK
Current - Collector Cutoff (Max): 250 µA
Power - Max: 330 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 66 A
Supplier Device Package: ECONO2 4PACK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 75A
Operating Temperature: 150°C (TJ)
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB600AH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 910A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB70LA60UF VS-GB70LA60UF Vishay General Semiconductor - Diodes Division VS-GB70LA60UF.pdf Description: IGBT MOD 600V 111A 447W SOT-227
Current - Collector Cutoff (Max): 100 µA
Power - Max: 447 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 111 A
IGBT Type: NPT
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 180 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB75DA120UP VS-GB75DA120UP Vishay General Semiconductor - Diodes Division VS-GB75DA120UP.pdf Description: IGBT MODULE 1200V 658W SOT227
Produkt ist nicht verfügbar
 Mindestbestellmenge: 180 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB75YF120N Vishay General Semiconductor - Diodes Division vs-gb75yf120n.pdf Description: IGBT MOD 1200V 100A ECONO2 4PACK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB90DA120U VS-GB90DA120U Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 149A 862W SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT100DA120U VS-GT100DA120U Vishay General Semiconductor - Diodes Division VS-GT100DA120U.pdf Description: IGBT MOD 1200V 258A 893W SOT-227
Current - Collector Cutoff (Max): 100 µA
Power - Max: 893 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 258 A
IGBT Type: Trench
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 180 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT100DA60U VS-GT100DA60U Vishay General Semiconductor - Diodes Division GT100DA60U.pdf Description: IGBT MOD 600V 184A 577W SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT100NA120UX VS-GT100NA120UX Vishay General Semiconductor - Diodes Division VS-GT100NA120UX.pdf Description: IGBT MOD 1200V 134A 463W SOT-227
Current - Collector Cutoff (Max): 100 µA
Power - Max: 463 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 134 A
IGBT Type: Trench
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 180 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT100TP120N Vishay General Semiconductor - Diodes Division VS-GT100TP120N.pdf Description: IGBT MODULE 1200V 180A INT-A-PAK
Input Capacitance (Cies) @ Vce: 12.8 nF @ 30 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 652 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 180 A
IGBT Type: Trench
Supplier Device Package: INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
Operating Temperature: 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT175DA120U VS-GT175DA120U Vishay General Semiconductor - Diodes Division VS-GT175DA120U.pdf Description: IGBT MOD 1200V 288A 1087W SOT227
Current - Collector Cutoff (Max): 100 µA
Power - Max: 1087 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 288 A
IGBT Type: Trench
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT300FD060N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 600V 379A INT-A-PAK
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 379 A
Input Capacitance (Cies) @ Vce: 23.3 nF @ 30 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 1250 W
IGBT Type: Trench Field Stop
Supplier Device Package: Dual INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 300A
Operating Temperature: 175°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Dual INT-A-PAK (4 + 8)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT300YH120N VS-GT300YH120N Vishay General Semiconductor - Diodes Division vs-gt300yh120n.pdf Description: IGBT MODULE 1200V 341A INT-A-PAK
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 8)
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 36 nF @ 30 V
Current - Collector Cutoff (Max): 300 µA
Power - Max: 1042 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 341 A
IGBT Type: Trench
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ)
Operating Temperature: -40°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT400TH120N VS-GT400TH120N Vishay General Semiconductor - Diodes Division VS-GT400TH120N.pdf Description: IGBT MODULE 1200V 600A INT-A-PAK
Input Capacitance (Cies) @ Vce: 28.8 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2119 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 600 A
Part Status: Obsolete
IGBT Type: Trench
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
Operating Temperature: 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 8)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT400TH120U Vishay General Semiconductor - Diodes Division VS-GT400TH120U.pdf Description: IGBT MOD 1200V 750A INT-A-PAK
Input Capacitance (Cies) @ Vce: 51.2 nF @ 30 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2344 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 750 A
Part Status: Obsolete
IGBT Type: Trench
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 400A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 8)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT400TH60N VS-GT400TH60N Vishay General Semiconductor - Diodes Division PdfFile_234586.pdf Description: IGBT MODULE 600V 530A INT-A-PAK
Input Capacitance (Cies) @ Vce: 30.8 nF @ 30 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1600 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 530 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
Operating Temperature: 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 8)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT50TP120N Vishay General Semiconductor - Diodes Division VS-GT50TP120N.pdf Description: IGBT MODULE 1200V 100A INT-A-PAK
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
IGBT Type: Trench
Supplier Device Package: INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
Operating Temperature: 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 6.24 nF @ 30 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 405 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-95PFR40T vs-95pfrseries.pdf
VS-95PFR40T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD REV 400V 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-95PFR40W vs-95pfrseries.pdf
VS-95PFR40W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD REV 400V 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-97PFR120 vs-95pfrseries.pdf
VS-97PFR120
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD REV 1200V 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-CPV362M4FPBF vs-cpv362m4.pdf
VS-CPV362M4FPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 8.8A 23W IMS-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-EMF050J60U VS-EMF050J60U.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 88A 338W EMIPAK2
Power - Max: 338 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 88 A
Part Status: Obsolete
Supplier Device Package: EMIPAK2
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Operating Temperature: 150°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: EMIPAK2
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V
Current - Collector Cutoff (Max): 100 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETF075Y60U vs-etf075y60u.pdf
VS-ETF075Y60U
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 109A EMIPAK-2B
Input Capacitance (Cies) @ Vce: 4.44 nF @ 30 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 294 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench
Supplier Device Package: EMIPAK-2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.93V @ 15V, 75A
Operating Temperature: 175°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: EMIPAK-2B
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 60 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETL015Y120H VS-ETL015Y120H.pdf
VS-ETL015Y120H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 22A 89W EMIPAK-2B
Input Capacitance (Cies) @ Vce: 1.07 nF @ 30 V
Current - Collector Cutoff (Max): 75 µA
Power - Max: 89 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 22 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: EMIPAK-2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.03V @ 15V, 15A
Operating Temperature: 150°C (TJ)
Input: Standard
Mounting Type: Chassis Mount
Package / Case: EMIPAK-2B
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-FA38SA50LCP VS-FA38SA50LCP.pdf
VS-FA38SA50LCP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 500V 38A SOT-227
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-FA40SA50LC vs-fa40sa50lc.pdf
VS-FA40SA50LC
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 500V 40A SOT-227
Produkt ist nicht verfügbar
Mindestbestellmenge: 160 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-FA72SA50LC vs-fa72sa50lc.pdf
VS-FA72SA50LC
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 500V 72A SOT-227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-FB180SA10P FB180SA10P.pdf
VS-FB180SA10P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 100V 180A SOT-227
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GA100NA60UP VS-GA100NA60UP.pdf
VS-GA100NA60UP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 100A 250W SOT227
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 7.4 nF @ 30 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GA100TS60SFPBF VS-GA100TS60SFPbF.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 220A INT-A-PAK
Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 780 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 220 A
IGBT Type: PT
Supplier Device Package: INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.28V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GA200HS60S1PBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 480A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 32.5 nF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GA200SA60SP GA200SA60SP.pdf
VS-GA200SA60SP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 781W SOT-227
Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 781 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Part Status: Obsolete
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 180 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GA200SA60UP
VS-GA200SA60UP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 200A 500W SOT227
Input Capacitance (Cies) @ Vce: 16.5 nF @ 30 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 500 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 200 A
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GA200TH60S
VS-GA200TH60S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 260A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB100LH120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 200A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB100NH120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 200A INT-A-PAK
Input Capacitance (Cies) @ Vce: 8.58 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 833 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
Operating Temperature: 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB100TH120N
VS-GB100TH120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 200A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB100TH120U VS-GB100TH120U.pdf
VS-GB100TH120U
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 200A INT-A-PAK
Input Capacitance (Cies) @ Vce: 8.45 nF @ 20 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1136 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
IGBT Type: NPT
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB100TP120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 200A INT-A-PAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB100TP120U
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 150A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB100TS60NPBF VS-GB100TS60NPbF.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 108A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB150LH120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 300A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB150TH120N
VS-GB150TH120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 300A INT-A-PAK
Current - Collector (Ic) (Max): 300 A
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 150A
Operating Temperature: 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1008 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB150TH120U vs-gb150th120u.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 280A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB15XP120KTPBF VS-GB15XP120KTPBF.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 30A 187W MTP
Input Capacitance (Cies) @ Vce: 1.95 nF @ 30 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 187 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
IGBT Type: NPT
Supplier Device Package: MTP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.66V @ 15V, 30A
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Configuration: Three Phase Inverter
Input: Standard
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB200LH120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 370A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB200NH120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 420A INT-A-PAK
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1562 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 420 A
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A (Typ)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB200TH120N
VS-GB200TH120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 360A INT-A-PAK
Input Capacitance (Cies) @ Vce: 14.9 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1136 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 360 A
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 200A
Operating Temperature: 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB200TH120U
VS-GB200TH120U
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 330A INT-A-PAK
Input Capacitance (Cies) @ Vce: 16.9 nF @ 30 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1316 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 330 A
Part Status: Obsolete
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 200A
Operating Temperature: 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB300AH120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 620A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB300LH120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 500A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB300NH120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 500A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB300TH120N VS-GB300TH120N.pdf
VS-GB300TH120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 500A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB300TH120U VS-GB300TH120U.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 530A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB400AH120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 650A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB400AH120U VS-GB400AH120U.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 550A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB400TH120N
VS-GB400TH120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 800A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB400TH120U VS-GB400TH120U.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 660A INT-A-PAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB50LP120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 100A INT-A-PAK
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 446 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Supplier Device Package: INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A (Typ)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB50TP120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 100A INT-A-PAK
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 446 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Supplier Device Package: INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB50YF120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 66A ECONO2 4PACK
Current - Collector Cutoff (Max): 250 µA
Power - Max: 330 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 66 A
Supplier Device Package: ECONO2 4PACK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 75A
Operating Temperature: 150°C (TJ)
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB600AH120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 910A INT-A-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB70LA60UF VS-GB70LA60UF.pdf
VS-GB70LA60UF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 111A 447W SOT-227
Current - Collector Cutoff (Max): 100 µA
Power - Max: 447 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 111 A
IGBT Type: NPT
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 180 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB75DA120UP VS-GB75DA120UP.pdf
VS-GB75DA120UP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 658W SOT227
Produkt ist nicht verfügbar
Mindestbestellmenge: 180 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB75YF120N vs-gb75yf120n.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 100A ECONO2 4PACK
Produkt ist nicht verfügbar
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GB90DA120U
VS-GB90DA120U
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 149A 862W SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT100DA120U VS-GT100DA120U.pdf
VS-GT100DA120U
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 258A 893W SOT-227
Current - Collector Cutoff (Max): 100 µA
Power - Max: 893 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 258 A
IGBT Type: Trench
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 180 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT100DA60U GT100DA60U.pdf
VS-GT100DA60U
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 184A 577W SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT100NA120UX VS-GT100NA120UX.pdf
VS-GT100NA120UX
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 134A 463W SOT-227
Current - Collector Cutoff (Max): 100 µA
Power - Max: 463 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 134 A
IGBT Type: Trench
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 180 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT100TP120N VS-GT100TP120N.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 180A INT-A-PAK
Input Capacitance (Cies) @ Vce: 12.8 nF @ 30 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 652 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 180 A
IGBT Type: Trench
Supplier Device Package: INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
Operating Temperature: 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT175DA120U VS-GT175DA120U.pdf
VS-GT175DA120U
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 288A 1087W SOT227
Current - Collector Cutoff (Max): 100 µA
Power - Max: 1087 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 288 A
IGBT Type: Trench
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT300FD060N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 379A INT-A-PAK
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 379 A
Input Capacitance (Cies) @ Vce: 23.3 nF @ 30 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 1250 W
IGBT Type: Trench Field Stop
Supplier Device Package: Dual INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 300A
Operating Temperature: 175°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Dual INT-A-PAK (4 + 8)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT300YH120N vs-gt300yh120n.pdf
VS-GT300YH120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 341A INT-A-PAK
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 8)
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 36 nF @ 30 V
Current - Collector Cutoff (Max): 300 µA
Power - Max: 1042 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 341 A
IGBT Type: Trench
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ)
Operating Temperature: -40°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT400TH120N VS-GT400TH120N.pdf
VS-GT400TH120N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 600A INT-A-PAK
Input Capacitance (Cies) @ Vce: 28.8 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2119 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 600 A
Part Status: Obsolete
IGBT Type: Trench
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
Operating Temperature: 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 8)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT400TH120U VS-GT400TH120U.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 750A INT-A-PAK
Input Capacitance (Cies) @ Vce: 51.2 nF @ 30 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2344 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 750 A
Part Status: Obsolete
IGBT Type: Trench
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 400A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 8)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT400TH60N PdfFile_234586.pdf
VS-GT400TH60N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 530A INT-A-PAK
Input Capacitance (Cies) @ Vce: 30.8 nF @ 30 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1600 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 530 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
Operating Temperature: 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 8)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT50TP120N VS-GT50TP120N.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 100A INT-A-PAK
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
IGBT Type: Trench
Supplier Device Package: INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
Operating Temperature: 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 6.24 nF @ 30 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 405 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 69 138 207 276 318 319 320 321 322 323 324 325 326 327 328 345 414 483 552 621 690 696  [ Nächste Seite >> ]