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2KBP10ML-001E4/51 2KBP10ML-001E4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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2KBP10ML-5/22 2KBP10ML-5/22 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Bulk
Produkt ist nicht verfügbar
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2KBP10ML-5E4/51 2KBP10ML-5E4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
Produkt ist nicht verfügbar
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2KBP10ML-5E4/72 2KBP10ML-5E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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2KBP10ML-6767E4/51 2KBP10ML-6767E4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
Produkt ist nicht verfügbar
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2KBP10ML-6767E4/72 2KBP10ML-6767E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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2KBP10ML-7001E4/51 2KBP10ML-7001E4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Produkt ist nicht verfügbar
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3KBP02M-E4/72 3KBP02M-E4/72 Vishay General Semiconductor - Diodes Division 3KBP005%2C01%2C02%2C04%2C06%2C08M.pdf Description: BRIDGE RECT 1PHASE 200V 3A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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3KBP04M-E4/72 3KBP04M-E4/72 Vishay General Semiconductor - Diodes Division 3KBP005,01,02,04,06,08M.pdf Description: BRIDGE RECT 1PHASE 400V 3A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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3KBP06M-E4/72 3KBP06M-E4/72 Vishay General Semiconductor - Diodes Division 3KBP005%2C01%2C02%2C04%2C06%2C08M.pdf Description: BRIDGE RECT 1PHASE 600V 3A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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3KBP08M-01E4/P 3KBP08M-01E4/P Vishay General Semiconductor - Diodes Division 3KBP005,01,02,04,06,08M.pdf Description: BRIDGE RECT 1PHASE 800V 3A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Bulk
Produkt ist nicht verfügbar
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3KBP08M-E4/72 3KBP08M-E4/72 Vishay General Semiconductor - Diodes Division 3KBP005%2C01%2C02%2C04%2C06%2C08M.pdf Description: BRIDGE RECT 1PHASE 800V 3A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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3N257-5410E4/51 3N257-5410E4/51 Vishay General Semiconductor - Diodes Division 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
Produkt ist nicht verfügbar
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3N257-E4/72 3N257-E4/72 Vishay General Semiconductor - Diodes Division 2KBP005M-10M-E4%2C_3N253-259-E4_Rev_Apr_2017.pdf Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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3N258-E4/72 3N258-E4/72 Vishay General Semiconductor - Diodes Division 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Produkt ist nicht verfügbar
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KBP02M-61E4/51 KBP02M-61E4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M,%203N246_thru_52.pdf Description: BRIDGE RECT 1P 200V 1.5A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
Produkt ist nicht verfügbar
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KBP02ML-6127E4/72 KBP02ML-6127E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1P 200V 1.5A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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KBP04M-43E4/51 KBP04M-43E4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M,%203N246_thru_52.pdf Description: BRIDGE RECT 1P 400V 1.5A KBPM
Produkt ist nicht verfügbar
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KBP04ML-44E4/51 KBP04ML-44E4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1P 400V 1.5A KBPM
Produkt ist nicht verfügbar
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KBP04ML-44E4/72 KBP04ML-44E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1P 400V 1.5A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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KBP06ML-6133E4/72 KBP06ML-6133E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1P 600V 1.5A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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KBP06ML-6161E4/51 KBP06ML-6161E4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1P 600V 1.5A KBPM
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Produkt ist nicht verfügbar
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KBP06ML-6161E4/72 KBP06ML-6161E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1P 600V 1.5A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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KBP06ML-6424E4/72 KBP06ML-6424E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1P 600V 1.5A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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KBP06ML-6836E4/72 KBP06ML-6836E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1P 600V 1.5A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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KBP08M-6E4/51 KBP08M-6E4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M,%203N246_thru_52.pdf Description: BRIDGE RECT 1P 800V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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KBP08M-9E4/51 KBP08M-9E4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M%2C%203N246_thru_52.pdf Description: BRIDGE RECT 1P 800V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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KBP08ML-6747E4/51 KBP08ML-6747E4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1P 800V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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BYG10JHE3_A/H BYG10JHE3_A/H Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BYG10JHE3_A/I BYG10JHE3_A/I Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7500 Stücke
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BYG10JHM3_A/H BYG10JHM3_A/H Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BYG10JHM3_A/I BYG10JHM3_A/I Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BYG10KHM3_A/H BYG10KHM3_A/H Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVAL 800V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BYG10KHM3_A/I BYG10KHM3_A/I Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVAL 800V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
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BYG10MHE3_A/H BYG10MHE3_A/H Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7200 Stücke
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BYG10MHE3_A/I BYG10MHE3_A/I Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7500 Stücke
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BYG10MHM3_A/H BYG10MHM3_A/H Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12600 Stücke
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BYG10MHM3_A/I BYG10MHM3_A/I Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYG20DHE3_A/H BYG20DHE3_A/H Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 200V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7200 Stücke
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BYG20DHE3_A/I BYG20DHE3_A/I Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 200V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYG20DHM3_A/H BYG20DHM3_A/H Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 200V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 14400 Stücke
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BYG20DHM3_A/I BYG20DHM3_A/I Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 200V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYG20GHE3_A/I BYG20GHE3_A/I Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7500 Stücke
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BYG20GHM3_A/H BYG20GHM3_A/H Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 14400 Stücke
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BYG20GHM3_A/I BYG20GHM3_A/I Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
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BYG20JHM3_A/H BYG20JHM3_A/H Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 14400 Stücke
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BYG20JHM3_A/I BYG20JHM3_A/I Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYG21MHE3_A/I BYG21MHE3_A/I Vishay General Semiconductor - Diodes Division byg21k.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYG21MHM3_A/H BYG21MHM3_A/H Vishay General Semiconductor - Diodes Division byg21k.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10800 Stücke
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BYG21MHM3_A/I BYG21MHM3_A/I Vishay General Semiconductor - Diodes Division byg21k.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
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BYG22AHE3_A/I BYG22AHE3_A/I Vishay General Semiconductor - Diodes Division byg22a.pdf Description: DIODE AVALANCHE 50V 2A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7500 Stücke
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BYG22AHM3_A/H BYG22AHM3_A/H Vishay General Semiconductor - Diodes Division byg22a.pdf Description: DIODE AVALANCHE 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 9000 Stücke
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BYG22AHM3_A/I BYG22AHM3_A/I Vishay General Semiconductor - Diodes Division byg22a.pdf Description: DIODE AVALANCHE 50V 2A DO214AC
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
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BYG22BHE3_A/I BYG22BHE3_A/I Vishay General Semiconductor - Diodes Division byg22a.pdf Description: DIODE AVALANCHE 100V 2A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Qualification: AEC-Q101
Grade: Automotive
Technology: Avalanche
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7500 Stücke
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BYG22BHM3_A/H BYG22BHM3_A/H Vishay General Semiconductor - Diodes Division byg22a.pdf Description: DIODE AVALANCHE 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 9000 Stücke
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BYG22BHM3_A/I BYG22BHM3_A/I Vishay General Semiconductor - Diodes Division byg22a.pdf Description: DIODE AVALANCHE 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
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BYG22DHE3_A/H BYG22DHE3_A/H Vishay General Semiconductor - Diodes Division byg22a.pdf Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.25 EUR
Mindestbestellmenge: 1800 Stücke
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BYG22DHM3_A/H BYG22DHM3_A/H Vishay General Semiconductor - Diodes Division byg22a.pdf Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 9000 Stücke
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BYG22DHM3_A/I BYG22DHM3_A/I Vishay General Semiconductor - Diodes Division byg22a.pdf Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
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VSKY20301608-G4-08 VSKY20301608-G4-08 Vishay General Semiconductor - Diodes Division vsky20301608.pdf Description: DIODE SCHOTTKY 30V 2A CLP1608-2L
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 375pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: CLP1608-2L
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
auf Bestellung 7470 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.27 EUR
80+0.26 EUR
100+0.23 EUR
500+0.18 EUR
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2KBP10ML-001E4/51
2KBP10ML-001E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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2KBP10ML-5/22
2KBP10ML-5/22
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Bulk
Produkt ist nicht verfügbar
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2KBP10ML-5E4/51
2KBP10ML-5E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
Produkt ist nicht verfügbar
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2KBP10ML-5E4/72
2KBP10ML-5E4/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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2KBP10ML-6767E4/51
2KBP10ML-6767E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
Produkt ist nicht verfügbar
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2KBP10ML-6767E4/72
2KBP10ML-6767E4/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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2KBP10ML-7001E4/51
2KBP10ML-7001E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Produkt ist nicht verfügbar
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3KBP02M-E4/72 3KBP005%2C01%2C02%2C04%2C06%2C08M.pdf
3KBP02M-E4/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 3A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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3KBP04M-E4/72 3KBP005,01,02,04,06,08M.pdf
3KBP04M-E4/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 3A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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3KBP06M-E4/72 3KBP005%2C01%2C02%2C04%2C06%2C08M.pdf
3KBP06M-E4/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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3KBP08M-01E4/P 3KBP005,01,02,04,06,08M.pdf
3KBP08M-01E4/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Bulk
Produkt ist nicht verfügbar
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3KBP08M-E4/72 3KBP005%2C01%2C02%2C04%2C06%2C08M.pdf
3KBP08M-E4/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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3N257-5410E4/51 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf
3N257-5410E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
Produkt ist nicht verfügbar
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3N257-E4/72 2KBP005M-10M-E4%2C_3N253-259-E4_Rev_Apr_2017.pdf
3N257-E4/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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3N258-E4/72 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf
3N258-E4/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Produkt ist nicht verfügbar
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KBP02M-61E4/51 KBP005M_thru_10M,%203N246_thru_52.pdf
KBP02M-61E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 1.5A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
Produkt ist nicht verfügbar
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KBP02ML-6127E4/72
KBP02ML-6127E4/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 1.5A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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KBP04M-43E4/51 KBP005M_thru_10M,%203N246_thru_52.pdf
KBP04M-43E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 1.5A KBPM
Produkt ist nicht verfügbar
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KBP04ML-44E4/51
KBP04ML-44E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 1.5A KBPM
Produkt ist nicht verfügbar
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KBP04ML-44E4/72
KBP04ML-44E4/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 1.5A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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KBP06ML-6133E4/72
KBP06ML-6133E4/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 1.5A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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KBP06ML-6161E4/51
KBP06ML-6161E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 1.5A KBPM
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Produkt ist nicht verfügbar
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KBP06ML-6161E4/72
KBP06ML-6161E4/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 1.5A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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KBP06ML-6424E4/72
KBP06ML-6424E4/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 1.5A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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KBP06ML-6836E4/72
KBP06ML-6836E4/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 1.5A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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KBP08M-6E4/51 KBP005M_thru_10M,%203N246_thru_52.pdf
KBP08M-6E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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KBP08M-9E4/51 KBP005M_thru_10M%2C%203N246_thru_52.pdf
KBP08M-9E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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KBP08ML-6747E4/51
KBP08ML-6747E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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BYG10JHE3_A/H byg10.pdf
BYG10JHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BYG10JHE3_A/I byg10.pdf
BYG10JHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BYG10JHM3_A/H byg10.pdf
BYG10JHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 12600 Stücke
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BYG10JHM3_A/I byg10.pdf
BYG10JHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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BYG10KHM3_A/H byg10.pdf
BYG10KHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BYG10KHM3_A/I byg10.pdf
BYG10KHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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BYG10MHE3_A/H byg10.pdf
BYG10MHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 7200 Stücke
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BYG10MHE3_A/I byg10.pdf
BYG10MHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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BYG10MHM3_A/H byg10.pdf
BYG10MHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 12600 Stücke
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BYG10MHM3_A/I byg10.pdf
BYG10MHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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BYG20DHE3_A/H byg20d.pdf
BYG20DHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 7200 Stücke
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BYG20DHE3_A/I byg20d.pdf
BYG20DHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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BYG20DHM3_A/H byg20d.pdf
BYG20DHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 14400 Stücke
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BYG20DHM3_A/I byg20d.pdf
BYG20DHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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BYG20GHE3_A/I byg20d.pdf
BYG20GHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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BYG20GHM3_A/H byg20d.pdf
BYG20GHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 14400 Stücke
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BYG20GHM3_A/I byg20d.pdf
BYG20GHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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BYG20JHM3_A/H byg20d.pdf
BYG20JHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 14400 Stücke
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BYG20JHM3_A/I byg20d.pdf
BYG20JHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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BYG21MHE3_A/I byg21k.pdf
BYG21MHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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BYG21MHM3_A/H byg21k.pdf
BYG21MHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10800 Stücke
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BYG21MHM3_A/I byg21k.pdf
BYG21MHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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BYG22AHE3_A/I byg22a.pdf
BYG22AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 2A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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BYG22AHM3_A/H byg22a.pdf
BYG22AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
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BYG22AHM3_A/I byg22a.pdf
BYG22AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 2A DO214AC
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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BYG22BHE3_A/I byg22a.pdf
BYG22BHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Qualification: AEC-Q101
Grade: Automotive
Technology: Avalanche
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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BYG22BHM3_A/H byg22a.pdf
BYG22BHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYG22BHM3_A/I byg22a.pdf
BYG22BHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYG22DHE3_A/H byg22a.pdf
BYG22DHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1800+0.25 EUR
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYG22DHM3_A/H byg22a.pdf
BYG22DHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYG22DHM3_A/I byg22a.pdf
BYG22DHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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VSKY20301608-G4-08 vsky20301608.pdf
VSKY20301608-G4-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A CLP1608-2L
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 375pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: CLP1608-2L
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
auf Bestellung 7470 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
77+0.27 EUR
80+0.26 EUR
100+0.23 EUR
500+0.18 EUR
Mindestbestellmenge: 77 Stücke
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