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VTVS5V0ASMF-HM3-08 VTVS5V0ASMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 5VWM 8.9VC DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 8.9V
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 42.95A
Capacitance @ Frequency: 2095pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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3000+0.25 EUR
6000+0.23 EUR
9000+0.21 EUR
15000+0.2 EUR
30000+0.18 EUR
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VTVS8V5ASMF-HM3-08 VTVS8V5ASMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 8.5VWM 13.5V DO219AB
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 13.5V
Voltage - Breakdown (Min): 9.5V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 8.5V
Current - Peak Pulse (10/1000µs): 28.24A
Capacitance @ Frequency: 1270pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
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VTVS9V4ASMF-HM3-08 VTVS9V4ASMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 9.4VWM 14.9VC DO219AB
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VTVS15ASMF-HM3-08 VTVS15ASMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 15.1VWM 25VC DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 15.1V
Current - Peak Pulse (10/1000µs): 15.47A
Capacitance @ Frequency: 684pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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VTVS23ASMF-HM3-08 VTVS23ASMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 22.6VWM 38VC DO219AB
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VTVS28ASMF-HM3-08 VTVS28ASMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 27.9VWM 47VC DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 47V
Voltage - Breakdown (Min): 31.4V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 27.9V
Current - Peak Pulse (10/1000µs): 8.21A
Capacitance @ Frequency: 412pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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VTVS43ASMF-HM3-08 VTVS43ASMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 43.2VWM 73VC DO219AB
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 73V
Voltage - Breakdown (Min): 48.5V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 43.2V
Current - Peak Pulse (10/1000µs): 5.23A
Capacitance @ Frequency: 292pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
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VTVS8V5GSMF-HM3-08 VTVS8V5GSMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 8.5VWM 13.5VC DO219AB
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VTVS9V4GSMF-HM3-08 VTVS9V4GSMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 9.4VWM 14.9VC DO219AB
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VTVS10GSMF-HM3-08 VTVS10GSMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 10.3VWM 16.3VC DO219AB
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VTVS11GSMF-HM3-08 VTVS11GSMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 11.2V 18V DO219AB
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VTVS12GSMF-HM3-08 VTVS12GSMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 12.4VWM 20.1V DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 20.1V
Voltage - Breakdown (Min): 14.41V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 12.4V
Current - Peak Pulse (10/1000µs): 19.53A
Capacitance @ Frequency: 807pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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VTVS14GSMF-HM3-08 VTVS14GSMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 13.8VWM 22.2VC DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 22.2V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 13.8V
Current - Peak Pulse (10/1000µs): 17.67A
Capacitance @ Frequency: 752pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Voltage - Breakdown (Min): 15.88V
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VTVS15GSMF-HM3-08 VTVS15GSMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 15.1VWM 25VC DO219AB
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25V
Voltage - Breakdown (Min): 17.6V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 15.1V
Current - Peak Pulse (10/1000µs): 15.89A
Capacitance @ Frequency: 684pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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VTVS19GSMF-HM3-08 VTVS19GSMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 18.7VWM 31VC DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 31V
Voltage - Breakdown (Min): 21.61V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 18.7V
Current - Peak Pulse (10/1000µs): 12.84A
Capacitance @ Frequency: 558pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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VTVS9V4ASMF-M3-18 VTVS9V4ASMF-M3-18 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 9.4VWM 14.9VC DO219AB
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VTVS9V4ASMF-HM3-18 VTVS9V4ASMF-HM3-18 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 9.4VWM 14.9VC DO219AB
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VTVS11ASMF-HM3-18 VTVS11ASMF-HM3-18 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 11.2VWM 18VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 910pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.13A
Voltage - Reverse Standoff (Typ): 11.2V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.6V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZX584C5V1-V-G-08 BZX584C5V1-V-G-08 Vishay General Semiconductor - Diodes Division BZX584C-V-G-Series.pdf Description: DIODE ZENER 5.1V 200MW SOD523
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VS-10TTS08SPBF VS-10TTS08SPBF Vishay General Semiconductor - Diodes Division 10TTS08S.pdf Description: SCR 800V 10A TO263AB
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VS-12CWQ10FNTR-M3 VS-12CWQ10FNTR-M3 Vishay General Semiconductor - Diodes Division 12cwq10f.pdf Description: DIODE ARRAY SCHOTT 100V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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VS-16TTS08STRRPBF VS-16TTS08STRRPBF Vishay General Semiconductor - Diodes Division VS-16TTS..SPbF_Series.pdf Description: SCR 800V 16A TO263AB
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VS-20ETS12S-M3 VS-20ETS12S-M3 Vishay General Semiconductor - Diodes Division vs-20ets08s.pdf Description: DIODE STANDARD 1200V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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VS-50WQ10FNTR-M3 VS-50WQ10FNTR-M3 Vishay General Semiconductor - Diodes Division vs-50wq10fn.pdf Description: DIODE SCHOTTKY 100V 5.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 183pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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VS-8EWF12STR-M3 VS-8EWF12STR-M3 Vishay General Semiconductor - Diodes Division vs-8ewf12sm.pdf Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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VS-8EWS08STR-M3 VS-8EWS08STR-M3 Vishay General Semiconductor - Diodes Division vs-8ews08sm.pdf Description: DIODE STANDARD 800V 8A TO252AA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io): 8A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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VS-MURB1520TRLPBF VS-MURB1520TRLPBF Vishay General Semiconductor - Diodes Division vs-murb1520-m3-1-m3.pdf Description: DIODE GEN PURP 200V 15A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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VS-MURB2020CTTRLP VS-MURB2020CTTRLP Vishay General Semiconductor - Diodes Division VS-MURB2020CT%28-1%29PbF.pdf Description: DIODE ARRAY GP 200V 10A TO263AB
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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VSKY20301608-G4-08 VSKY20301608-G4-08 Vishay General Semiconductor - Diodes Division vsky20301608.pdf Description: DIODE SCHOTTKY 30V 2A CLP1608-2L
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 375pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: CLP1608-2L
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
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SS24SHE3_B/H SS24SHE3_B/H Vishay General Semiconductor - Diodes Division ss22s.pdf Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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BYS10-45HE3_A/H BYS10-45HE3_A/H Vishay General Semiconductor - Diodes Division bys10.pdf Description: DIODE SCHOTTKY 45V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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BYS10-35HE3_A/H BYS10-35HE3_A/H Vishay General Semiconductor - Diodes Division bys10.pdf Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.12 EUR
3600+0.11 EUR
Mindestbestellmenge: 1800 Stücke
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SS14-61HE3J_A/H SS14-61HE3J_A/H Vishay General Semiconductor - Diodes Division SS12-SS16.Aug.4%2C2015.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-6600HE3_A/H SS14-6600HE3_A/H Vishay General Semiconductor - Diodes Division SS12-SS16.Aug.4%2C2015.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS14-6605HE3_A/H SS14-6605HE3_A/H Vishay General Semiconductor - Diodes Division SS12-SS16.Aug.4%2C2015.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-6605HE3J_A/H SS14-6605HE3J_A/H Vishay General Semiconductor - Diodes Division SS12-SS16.Aug.4%2C2015.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-6HE3_A/I SS14-6HE3_A/I Vishay General Semiconductor - Diodes Division SS12-SS16.Aug.4%2C2015.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-7000HE3_A/I SS14-7000HE3_A/I Vishay General Semiconductor - Diodes Division SS12-SS16.Aug.4%2C2015.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-7001HE3_A/I SS14-7001HE3_A/I Vishay General Semiconductor - Diodes Division SS12-SS16.Aug.4%2C2015.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-71CHE3_A/I SS14-71CHE3_A/I Vishay General Semiconductor - Diodes Division SS12-SS16.Aug.4%2C2015.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS26SHE3_B/H SS26SHE3_B/H Vishay General Semiconductor - Diodes Division ss26s.pdf Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 52200 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.27 EUR
3600+0.24 EUR
5400+0.23 EUR
9000+0.21 EUR
12600+0.2 EUR
Mindestbestellmenge: 1800 Stücke
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SS26SHE3_B/H SS26SHE3_B/H Vishay General Semiconductor - Diodes Division ss26s.pdf Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 54836 Stücke:
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19+1.11 EUR
31+0.68 EUR
100+0.43 EUR
500+0.33 EUR
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SS16HE3_B/I SS16HE3_B/I Vishay General Semiconductor - Diodes Division ss12.pdf Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
7500+0.23 EUR
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22500+0.19 EUR
Mindestbestellmenge: 7500 Stücke
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SS16HE3_B/I SS16HE3_B/I Vishay General Semiconductor - Diodes Division ss12.pdf Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
19+1.11 EUR
31+0.69 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
2000+0.26 EUR
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SS16HE3_B/H SS16HE3_B/H Vishay General Semiconductor - Diodes Division ss12.pdf Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 41400 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.27 EUR
3600+0.25 EUR
5400+0.23 EUR
9000+0.21 EUR
18000+0.2 EUR
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SS16HE3_B/H SS16HE3_B/H Vishay General Semiconductor - Diodes Division ss12.pdf Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 41443 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.11 EUR
31+0.69 EUR
100+0.44 EUR
500+0.33 EUR
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BZD27B20P-M3-08 BZD27B20P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 20V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
auf Bestellung 12000 Stücke:
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3000+0.21 EUR
6000+0.2 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000 Stücke
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BZD27B22P-M3-08 BZD27B22P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 22V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30000 Stücke
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BZD27B24P-HE3-08 BZD27B24P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 24V 800MW DO219AB
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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BZD27B24P-M3-08 BZD27B24P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 24V 800MW DO219AB
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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BZD27B27P-M3-08 BZD27B27P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 27V 800MW DO219AB
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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BZD27B36P-M3-08 BZD27B36P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 36V 800MW DO219AB
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30000 Stücke
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BZD27B39P-M3-08 BZD27B39P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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BZD27B3V6P-M3-08 BZD27B3V6P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 3000 Stücke:
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3000+0.24 EUR
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BZD27B3V9P-M3-08 BZD27B3V9P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 3.9V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 21000 Stücke:
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3000+0.21 EUR
6000+0.2 EUR
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BZD27B5V1P-M3-08 BZD27B5V1P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 5.1V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 6000 Stücke:
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3000+0.35 EUR
6000+0.32 EUR
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BZD27B20P-M3-08 BZD27B20P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 20V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
auf Bestellung 13842 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.8 EUR
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500+0.35 EUR
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BZD27B22P-M3-08 BZD27B22P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 22V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B24P-HE3-08 BZD27B24P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 24V 800MW DO219AB
auf Bestellung 2020 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.88 EUR
30+0.71 EUR
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500+0.37 EUR
1000+0.27 EUR
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BZD27B24P-M3-08 BZD27B24P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 24V 800MW DO219AB
auf Bestellung 2015 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.82 EUR
32+0.67 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.25 EUR
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VTVS5V0ASMF-HM3-08 vtvs3v3asmf.pdf
VTVS5V0ASMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 8.9VC DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 8.9V
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 42.95A
Capacitance @ Frequency: 2095pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.25 EUR
6000+0.23 EUR
9000+0.21 EUR
15000+0.2 EUR
30000+0.18 EUR
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VTVS8V5ASMF-HM3-08 vtvs3v3asmf.pdf
VTVS8V5ASMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.5VWM 13.5V DO219AB
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 13.5V
Voltage - Breakdown (Min): 9.5V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 8.5V
Current - Peak Pulse (10/1000µs): 28.24A
Capacitance @ Frequency: 1270pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.25 EUR
6000+0.23 EUR
9000+0.21 EUR
15000+0.2 EUR
Mindestbestellmenge: 3000 Stücke
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VTVS9V4ASMF-HM3-08 vtvs3v3asmf.pdf
VTVS9V4ASMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9.4VWM 14.9VC DO219AB
Produkt ist nicht verfügbar
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VTVS15ASMF-HM3-08 vtvs3v3asmf.pdf
VTVS15ASMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.1VWM 25VC DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 15.1V
Current - Peak Pulse (10/1000µs): 15.47A
Capacitance @ Frequency: 684pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.25 EUR
6000+0.23 EUR
9000+0.21 EUR
15000+0.2 EUR
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VTVS23ASMF-HM3-08 vtvs3v3asmf.pdf
VTVS23ASMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 22.6VWM 38VC DO219AB
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.27 EUR
6000+0.26 EUR
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VTVS28ASMF-HM3-08 vtvs3v3asmf.pdf
VTVS28ASMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 27.9VWM 47VC DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 47V
Voltage - Breakdown (Min): 31.4V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 27.9V
Current - Peak Pulse (10/1000µs): 8.21A
Capacitance @ Frequency: 412pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.25 EUR
6000+0.23 EUR
9000+0.21 EUR
15000+0.2 EUR
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VTVS43ASMF-HM3-08 vtvs3v3asmf.pdf
VTVS43ASMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43.2VWM 73VC DO219AB
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 73V
Voltage - Breakdown (Min): 48.5V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 43.2V
Current - Peak Pulse (10/1000µs): 5.23A
Capacitance @ Frequency: 292pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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VTVS8V5GSMF-HM3-08 vtvs3v3asmf.pdf
VTVS8V5GSMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.5VWM 13.5VC DO219AB
Produkt ist nicht verfügbar
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VTVS9V4GSMF-HM3-08 vtvs3v3asmf.pdf
VTVS9V4GSMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9.4VWM 14.9VC DO219AB
Produkt ist nicht verfügbar
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VTVS10GSMF-HM3-08 vtvs3v3asmf.pdf
VTVS10GSMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.3VWM 16.3VC DO219AB
Produkt ist nicht verfügbar
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VTVS11GSMF-HM3-08 vtvs3v3asmf.pdf
VTVS11GSMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11.2V 18V DO219AB
Produkt ist nicht verfügbar
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VTVS12GSMF-HM3-08 vtvs3v3asmf.pdf
VTVS12GSMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12.4VWM 20.1V DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 20.1V
Voltage - Breakdown (Min): 14.41V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 12.4V
Current - Peak Pulse (10/1000µs): 19.53A
Capacitance @ Frequency: 807pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VTVS14GSMF-HM3-08 vtvs3v3asmf.pdf
VTVS14GSMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13.8VWM 22.2VC DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 22.2V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 13.8V
Current - Peak Pulse (10/1000µs): 17.67A
Capacitance @ Frequency: 752pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Voltage - Breakdown (Min): 15.88V
Produkt ist nicht verfügbar
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VTVS15GSMF-HM3-08 vtvs3v3asmf.pdf
VTVS15GSMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.1VWM 25VC DO219AB
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25V
Voltage - Breakdown (Min): 17.6V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 15.1V
Current - Peak Pulse (10/1000µs): 15.89A
Capacitance @ Frequency: 684pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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VTVS19GSMF-HM3-08 vtvs3v3asmf.pdf
VTVS19GSMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.7VWM 31VC DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 31V
Voltage - Breakdown (Min): 21.61V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 18.7V
Current - Peak Pulse (10/1000µs): 12.84A
Capacitance @ Frequency: 558pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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VTVS9V4ASMF-M3-18 vtvs3v3asmf.pdf
VTVS9V4ASMF-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9.4VWM 14.9VC DO219AB
Produkt ist nicht verfügbar
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VTVS9V4ASMF-HM3-18 vtvs3v3asmf.pdf
VTVS9V4ASMF-HM3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9.4VWM 14.9VC DO219AB
Produkt ist nicht verfügbar
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VTVS11ASMF-HM3-18 vtvs3v3asmf.pdf
VTVS11ASMF-HM3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11.2VWM 18VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 910pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.13A
Voltage - Reverse Standoff (Typ): 11.2V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.6V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
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BZX584C5V1-V-G-08 BZX584C-V-G-Series.pdf
BZX584C5V1-V-G-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 200MW SOD523
auf Bestellung 698 Stücke:
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VS-10TTS08SPBF 10TTS08S.pdf
VS-10TTS08SPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 10A TO263AB
Produkt ist nicht verfügbar
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VS-12CWQ10FNTR-M3 12cwq10f.pdf
VS-12CWQ10FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 100V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
auf Bestellung 30661 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.14 EUR
10+2.65 EUR
100+1.8 EUR
500+1.43 EUR
1000+1.31 EUR
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VS-16TTS08STRRPBF VS-16TTS..SPbF_Series.pdf
VS-16TTS08STRRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 16A TO263AB
Produkt ist nicht verfügbar
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VS-20ETS12S-M3 vs-20ets08s.pdf
VS-20ETS12S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 7551 Stücke:
Lieferzeit 10-14 Tag (e)
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5+4.5 EUR
50+2.59 EUR
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VS-50WQ10FNTR-M3 vs-50wq10fn.pdf
VS-50WQ10FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 5.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 183pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
auf Bestellung 327 Stücke:
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AnzahlPrivatkunde
7+3.22 EUR
11+2.05 EUR
100+1.37 EUR
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VS-8EWF12STR-M3 vs-8ewf12sm.pdf
VS-8EWF12STR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 4558 Stücke:
Lieferzeit 10-14 Tag (e)
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3+8.46 EUR
10+5.58 EUR
100+3.95 EUR
500+3.36 EUR
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VS-8EWS08STR-M3 vs-8ews08sm.pdf
VS-8EWS08STR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 8A TO252AA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io): 8A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1408 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.62 EUR
10+4.37 EUR
100+3.26 EUR
500+2.77 EUR
1000+2.38 EUR
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VS-MURB1520TRLPBF vs-murb1520-m3-1-m3.pdf
VS-MURB1520TRLPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 15A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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VS-MURB2020CTTRLP VS-MURB2020CT%28-1%29PbF.pdf
VS-MURB2020CTTRLP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 10A TO263AB
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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VSKY20301608-G4-08 vsky20301608.pdf
VSKY20301608-G4-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A CLP1608-2L
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 375pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: CLP1608-2L
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.15 EUR
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SS24SHE3_B/H ss22s.pdf
SS24SHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 25200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1800+0.24 EUR
3600+0.21 EUR
5400+0.2 EUR
9000+0.19 EUR
18000+0.18 EUR
Mindestbestellmenge: 1800 Stücke
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BYS10-45HE3_A/H bys10.pdf
BYS10-45HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1800+0.24 EUR
3600+0.21 EUR
5400+0.2 EUR
9000+0.19 EUR
12600+0.18 EUR
Mindestbestellmenge: 1800 Stücke
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BYS10-35HE3_A/H bys10.pdf
BYS10-35HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1800+0.12 EUR
3600+0.11 EUR
Mindestbestellmenge: 1800 Stücke
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SS14-61HE3J_A/H SS12-SS16.Aug.4%2C2015.pdf
SS14-61HE3J_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-6600HE3_A/H SS12-SS16.Aug.4%2C2015.pdf
SS14-6600HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-6605HE3_A/H SS12-SS16.Aug.4%2C2015.pdf
SS14-6605HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-6605HE3J_A/H SS12-SS16.Aug.4%2C2015.pdf
SS14-6605HE3J_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-6HE3_A/I SS12-SS16.Aug.4%2C2015.pdf
SS14-6HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-7000HE3_A/I SS12-SS16.Aug.4%2C2015.pdf
SS14-7000HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-7001HE3_A/I SS12-SS16.Aug.4%2C2015.pdf
SS14-7001HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-71CHE3_A/I SS12-SS16.Aug.4%2C2015.pdf
SS14-71CHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS26SHE3_B/H ss26s.pdf
SS26SHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 52200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1800+0.27 EUR
3600+0.24 EUR
5400+0.23 EUR
9000+0.21 EUR
12600+0.2 EUR
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SS26SHE3_B/H ss26s.pdf
SS26SHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 54836 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.11 EUR
31+0.68 EUR
100+0.43 EUR
500+0.33 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SS16HE3_B/I ss12.pdf
SS16HE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7500+0.23 EUR
15000+0.2 EUR
22500+0.19 EUR
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SS16HE3_B/I ss12.pdf
SS16HE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 33548 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.11 EUR
31+0.69 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
2000+0.26 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SS16HE3_B/H ss12.pdf
SS16HE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 41400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1800+0.27 EUR
3600+0.25 EUR
5400+0.23 EUR
9000+0.21 EUR
18000+0.2 EUR
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SS16HE3_B/H ss12.pdf
SS16HE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 41443 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.11 EUR
31+0.69 EUR
100+0.44 EUR
500+0.33 EUR
Mindestbestellmenge: 19 Stücke
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BZD27B20P-M3-08 bzd27b-mseries.pdf
BZD27B20P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.21 EUR
6000+0.2 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000 Stücke
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BZD27B22P-M3-08 bzd27b-mseries.pdf
BZD27B22P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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BZD27B24P-HE3-08 bzd27bseries.pdf
BZD27B24P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 800MW DO219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B24P-M3-08 bzd27b-mseries.pdf
BZD27B24P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 800MW DO219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B27P-M3-08 bzd27b-mseries.pdf
BZD27B27P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 800MW DO219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B36P-M3-08 bzd27b-mseries.pdf
BZD27B36P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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BZD27B39P-M3-08 bzd27b-mseries.pdf
BZD27B39P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B3V6P-M3-08 bzd27b-mseries.pdf
BZD27B3V6P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.24 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B3V9P-M3-08 bzd27b-mseries.pdf
BZD27B3V9P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.21 EUR
6000+0.2 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000 Stücke
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BZD27B5V1P-M3-08 bzd27b-mseries.pdf
BZD27B5V1P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.35 EUR
6000+0.32 EUR
Mindestbestellmenge: 3000 Stücke
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BZD27B20P-M3-08 bzd27b-mseries.pdf
BZD27B20P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
auf Bestellung 13842 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
35+0.62 EUR
100+0.37 EUR
500+0.35 EUR
1000+0.24 EUR
Mindestbestellmenge: 27 Stücke
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BZD27B22P-M3-08 bzd27b-mseries.pdf
BZD27B22P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B24P-HE3-08 bzd27bseries.pdf
BZD27B24P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 800MW DO219AB
auf Bestellung 2020 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.88 EUR
30+0.71 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.27 EUR
Mindestbestellmenge: 24 Stücke
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BZD27B24P-M3-08 bzd27b-mseries.pdf
BZD27B24P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 800MW DO219AB
auf Bestellung 2015 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
32+0.67 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.25 EUR
Mindestbestellmenge: 26 Stücke
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