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BYS10-35HE3_A/H BYS10-35HE3_A/H Vishay General Semiconductor - Diodes Division bys10.pdf Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Qualification: AEC-Q101
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.10 EUR
3600+0.10 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
SS14-61HE3J_A/H Vishay General Semiconductor - Diodes Division SS12-SS16.Aug.4%2C2015.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS14-6600HE3_A/H Vishay General Semiconductor - Diodes Division SS12-SS16.Aug.4%2C2015.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS14-6605HE3_A/H Vishay General Semiconductor - Diodes Division SS12-SS16.Aug.4%2C2015.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS14-6605HE3J_A/H Vishay General Semiconductor - Diodes Division SS12-SS16.Aug.4%2C2015.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-6HE3_A/I Vishay General Semiconductor - Diodes Division SS12-SS16.Aug.4%2C2015.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS14-7000HE3_A/I Vishay General Semiconductor - Diodes Division SS12-SS16.Aug.4%2C2015.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-7001HE3_A/I Vishay General Semiconductor - Diodes Division SS12-SS16.Aug.4%2C2015.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS14-71CHE3_A/I Vishay General Semiconductor - Diodes Division SS12-SS16.Aug.4%2C2015.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS26SHE3_B/H SS26SHE3_B/H Vishay General Semiconductor - Diodes Division ss26s.pdf Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 14400 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.12 EUR
Mindestbestellmenge: 1800
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SS26SHE3_B/H SS26SHE3_B/H Vishay General Semiconductor - Diodes Division ss26s.pdf Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 15208 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
56+0.32 EUR
100+0.25 EUR
500+0.20 EUR
Mindestbestellmenge: 32
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SS16HE3_B/I SS16HE3_B/I Vishay General Semiconductor - Diodes Division ss12.pdf Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
7500+0.09 EUR
15000+0.09 EUR
Mindestbestellmenge: 7500
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SS16HE3_B/I SS16HE3_B/I Vishay General Semiconductor - Diodes Division ss12.pdf Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 15795 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
60+0.30 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 40
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SS16HE3_B/H SS16HE3_B/H Vishay General Semiconductor - Diodes Division ss12.pdf Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 84600 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.09 EUR
3600+0.09 EUR
Mindestbestellmenge: 1800
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SS16HE3_B/H SS16HE3_B/H Vishay General Semiconductor - Diodes Division ss12.pdf Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 86077 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
61+0.29 EUR
100+0.22 EUR
500+0.18 EUR
Mindestbestellmenge: 40
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BZD27B20P-M3-08 BZD27B20P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 20V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.18 EUR
6000+0.17 EUR
9000+0.16 EUR
Mindestbestellmenge: 3000
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BZD27B22P-M3-08 BZD27B22P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 22V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
Produkt ist nicht verfügbar
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BZD27B24P-HE3-08 BZD27B24P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 24V 800MW DO219AB
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BZD27B24P-M3-08 BZD27B24P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 24V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B27P-M3-08 BZD27B27P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 27V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B36P-M3-08 BZD27B36P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 36V 800MW DO219AB
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BZD27B39P-M3-08 BZD27B39P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B3V6P-M3-08 BZD27B3V6P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 3000 Stücke:
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3000+0.20 EUR
Mindestbestellmenge: 3000
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BZD27B3V9P-M3-08 BZD27B3V9P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 3.9V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 21000 Stücke:
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3000+0.18 EUR
6000+0.17 EUR
9000+0.16 EUR
Mindestbestellmenge: 3000
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BZD27B5V1P-M3-08 BZD27B5V1P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 5.1V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
6000+0.15 EUR
15000+0.14 EUR
21000+0.13 EUR
Mindestbestellmenge: 3000
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BZD27B20P-M3-08 BZD27B20P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 20V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
auf Bestellung 13842 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
35+0.52 EUR
100+0.31 EUR
500+0.29 EUR
1000+0.20 EUR
Mindestbestellmenge: 27
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BZD27B22P-M3-08 BZD27B22P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 22V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
Produkt ist nicht verfügbar
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BZD27B24P-HE3-08 BZD27B24P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 24V 800MW DO219AB
auf Bestellung 2020 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
30+0.60 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.23 EUR
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BZD27B24P-M3-08 BZD27B24P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 24V 800MW DO219AB
auf Bestellung 2015 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
32+0.56 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.21 EUR
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BZD27B27P-M3-08 BZD27B27P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 27V 800MW DO219AB
auf Bestellung 673 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
30+0.59 EUR
100+0.40 EUR
500+0.30 EUR
Mindestbestellmenge: 24
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BZD27B36P-M3-08 BZD27B36P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 36V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B3V6P-M3-08 BZD27B3V6P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 8643 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
40+0.45 EUR
100+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 27
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BZD27B3V9P-M3-08 BZD27B3V9P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 3.9V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 25084 Stücke:
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27+0.67 EUR
35+0.52 EUR
100+0.31 EUR
500+0.29 EUR
1000+0.20 EUR
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BZD27B5V1P-M3-08 BZD27B5V1P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 5.1V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 24735 Stücke:
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100+0.18 EUR
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BZD27C100P-E3-08 BZD27C100P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 13113 Stücke:
Lieferzeit 10-14 Tag (e)
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BZD27C10P-E3-08 BZD27C10P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 10V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
auf Bestellung 21906 Stücke:
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BZD27C11P-E3-08 BZD27C11P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 11V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
auf Bestellung 25081 Stücke:
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BZD27C15P-HE3-08 BZD27C15P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 48101 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
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100+0.34 EUR
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1000+0.25 EUR
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BZD27C16P-E3-08 BZD27C16P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 16V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
auf Bestellung 5668 Stücke:
Lieferzeit 10-14 Tag (e)
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BZD27C16P-HE3-08 BZD27C16P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 16V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 31424 Stücke:
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BZD27C180P-E3-08 BZD27C180P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 180V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
auf Bestellung 28834 Stücke:
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BZD27C22P-E3-08 BZD27C22P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 22V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
auf Bestellung 27533 Stücke:
Lieferzeit 10-14 Tag (e)
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BZD27C22P-HE3-18 BZD27C22P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 22V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C24P-E3-08 BZD27C24P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 24V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
auf Bestellung 30423 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
55+0.32 EUR
100+0.22 EUR
500+0.17 EUR
1000+0.15 EUR
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BZD27C27P-E3-08 BZD27C27P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 27V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
auf Bestellung 30764 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.60 EUR
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BZD27C27P-HE3-08 BZD27C27P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 27V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27374 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
31+0.57 EUR
100+0.40 EUR
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BZD27C30P-E3-08 BZD27C30P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 30V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
auf Bestellung 18527 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
32+0.55 EUR
100+0.39 EUR
500+0.30 EUR
1000+0.24 EUR
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Im Einkaufswagen  Stück im Wert von  UAH
BZD27C30P-HE3-08 BZD27C30P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 30V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 29539 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
31+0.57 EUR
100+0.40 EUR
500+0.31 EUR
1000+0.25 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C33P-E3-08 BZD27C33P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 33V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 24 V
auf Bestellung 28988 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
57+0.31 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C33P-HE3-18 BZD27C33P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 33V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 24 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C33P-M3-18 BZD27C33P-M3-18 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 33V 800MW DO219AB
auf Bestellung 7000 Stücke:
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BZD27C39P-E3-08 BZD27C39P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 39V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 23524 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
32+0.55 EUR
100+0.39 EUR
500+0.30 EUR
1000+0.24 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C4V3P-E3-08 BZD27C4V3P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 4.3V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
auf Bestellung 21143 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
47+0.37 EUR
100+0.21 EUR
500+0.19 EUR
Mindestbestellmenge: 35
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BZD27C6V2P-E3-08 BZD27C6V2P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 6.2V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
auf Bestellung 45917 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
54+0.33 EUR
109+0.16 EUR
Mindestbestellmenge: 36
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BZD27C75P-E3-08 BZD27C75P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 75V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 56 V
auf Bestellung 25270 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.70 EUR
30+0.60 EUR
100+0.42 EUR
500+0.33 EUR
1000+0.26 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
RS07G-GS08 RS07G-GS08 Vishay General Semiconductor - Diodes Division rs07b.pdf Description: DIODE STD 400V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 39241 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
40+0.44 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
S07G-GS08 S07G-GS08 Vishay General Semiconductor - Diodes Division s07b.pdf Description: DIODE GP 400V 700MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 53699 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.70 EUR
35+0.51 EUR
100+0.25 EUR
500+0.23 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
S07G-GS18 S07G-GS18 Vishay General Semiconductor - Diodes Division s07b.pdf Description: DIODE GP 400V 700MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 20552 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.70 EUR
35+0.51 EUR
100+0.25 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.16 EUR
5000+0.15 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
S07J-GS18 S07J-GS18 Vishay General Semiconductor - Diodes Division s07b.pdf Description: DIODE GP 600V 700MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 32215 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
49+0.36 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.17 EUR
2000+0.15 EUR
5000+0.14 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B200P-HE3-18 BZD27B200P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 200V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYS10-35HE3_A/H bys10.pdf
BYS10-35HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Qualification: AEC-Q101
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.10 EUR
3600+0.10 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
SS14-61HE3J_A/H SS12-SS16.Aug.4%2C2015.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-6600HE3_A/H SS12-SS16.Aug.4%2C2015.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-6605HE3_A/H SS12-SS16.Aug.4%2C2015.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-6605HE3J_A/H SS12-SS16.Aug.4%2C2015.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-6HE3_A/I SS12-SS16.Aug.4%2C2015.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-7000HE3_A/I SS12-SS16.Aug.4%2C2015.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-7001HE3_A/I SS12-SS16.Aug.4%2C2015.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS14-71CHE3_A/I SS12-SS16.Aug.4%2C2015.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS26SHE3_B/H ss26s.pdf
SS26SHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 14400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.12 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
SS26SHE3_B/H ss26s.pdf
SS26SHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 15208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
56+0.32 EUR
100+0.25 EUR
500+0.20 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
SS16HE3_B/I ss12.pdf
SS16HE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7500+0.09 EUR
15000+0.09 EUR
Mindestbestellmenge: 7500
Im Einkaufswagen  Stück im Wert von  UAH
SS16HE3_B/I ss12.pdf
SS16HE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 15795 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
60+0.30 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
SS16HE3_B/H ss12.pdf
SS16HE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 84600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.09 EUR
3600+0.09 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
SS16HE3_B/H ss12.pdf
SS16HE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 86077 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
61+0.29 EUR
100+0.22 EUR
500+0.18 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B20P-M3-08 bzd27b-mseries.pdf
BZD27B20P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
6000+0.17 EUR
9000+0.16 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B22P-M3-08 bzd27b-mseries.pdf
BZD27B22P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B24P-HE3-08 bzd27bseries.pdf
BZD27B24P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 800MW DO219AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B24P-M3-08 bzd27b-mseries.pdf
BZD27B24P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 800MW DO219AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B27P-M3-08 bzd27b-mseries.pdf
BZD27B27P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 800MW DO219AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B36P-M3-08 bzd27b-mseries.pdf
BZD27B36P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B39P-M3-08 bzd27b-mseries.pdf
BZD27B39P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B3V6P-M3-08 bzd27b-mseries.pdf
BZD27B3V6P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.20 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B3V9P-M3-08 bzd27b-mseries.pdf
BZD27B3V9P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
6000+0.17 EUR
9000+0.16 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B5V1P-M3-08 bzd27b-mseries.pdf
BZD27B5V1P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.15 EUR
15000+0.14 EUR
21000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B20P-M3-08 bzd27b-mseries.pdf
BZD27B20P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
auf Bestellung 13842 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
35+0.52 EUR
100+0.31 EUR
500+0.29 EUR
1000+0.20 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B22P-M3-08 bzd27b-mseries.pdf
BZD27B22P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B24P-HE3-08 bzd27bseries.pdf
BZD27B24P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 800MW DO219AB
auf Bestellung 2020 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
30+0.60 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.23 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B24P-M3-08 bzd27b-mseries.pdf
BZD27B24P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 800MW DO219AB
auf Bestellung 2015 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
32+0.56 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.21 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B27P-M3-08 bzd27b-mseries.pdf
BZD27B27P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 800MW DO219AB
auf Bestellung 673 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
30+0.59 EUR
100+0.40 EUR
500+0.30 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B36P-M3-08 bzd27b-mseries.pdf
BZD27B36P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B3V6P-M3-08 bzd27b-mseries.pdf
BZD27B3V6P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 8643 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
40+0.45 EUR
100+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B3V9P-M3-08 bzd27b-mseries.pdf
BZD27B3V9P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 25084 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
35+0.52 EUR
100+0.31 EUR
500+0.29 EUR
1000+0.20 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B5V1P-M3-08 bzd27b-mseries.pdf
BZD27B5V1P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 24735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
47+0.38 EUR
100+0.18 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C100P-E3-08 bzd27series.pdf
BZD27C100P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 13113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
54+0.33 EUR
103+0.17 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C10P-E3-08 bzd27series.pdf
BZD27C10P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
auf Bestellung 21906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
53+0.34 EUR
106+0.17 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C11P-E3-08 bzd27series.pdf
BZD27C11P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
auf Bestellung 25081 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
27+0.65 EUR
100+0.39 EUR
500+0.36 EUR
1000+0.25 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C15P-HE3-08 bzd27series.pdf
BZD27C15P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 48101 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
39+0.46 EUR
100+0.34 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C16P-E3-08 bzd27series.pdf
BZD27C16P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
auf Bestellung 5668 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
66+0.27 EUR
100+0.21 EUR
500+0.19 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C16P-HE3-08 bzd27series.pdf
BZD27C16P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 31424 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
33+0.55 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.27 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C180P-E3-08 bzd27series.pdf
BZD27C180P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 180V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
auf Bestellung 28834 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
30+0.60 EUR
100+0.42 EUR
500+0.33 EUR
1000+0.26 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C22P-E3-08 bzd27series.pdf
BZD27C22P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
auf Bestellung 27533 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
57+0.31 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C22P-HE3-18 bzd27series.pdf
BZD27C22P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C24P-E3-08 bzd27series.pdf
BZD27C24P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
auf Bestellung 30423 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
55+0.32 EUR
100+0.22 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C27P-E3-08 bzd27series.pdf
BZD27C27P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
auf Bestellung 30764 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
45+0.39 EUR
100+0.21 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C27P-HE3-08 bzd27series.pdf
BZD27C27P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
31+0.57 EUR
100+0.40 EUR
500+0.31 EUR
1000+0.25 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C30P-E3-08 bzd27series.pdf
BZD27C30P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
auf Bestellung 18527 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
32+0.55 EUR
100+0.39 EUR
500+0.30 EUR
1000+0.24 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C30P-HE3-08 bzd27series.pdf
BZD27C30P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 29539 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
31+0.57 EUR
100+0.40 EUR
500+0.31 EUR
1000+0.25 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C33P-E3-08 bzd27series.pdf
BZD27C33P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 24 V
auf Bestellung 28988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
57+0.31 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C33P-HE3-18 bzd27series.pdf
BZD27C33P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 24 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C33P-M3-18 BZD27-M_Series.pdf
BZD27C33P-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 800MW DO219AB
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C39P-E3-08 bzd27series.pdf
BZD27C39P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 23524 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
32+0.55 EUR
100+0.39 EUR
500+0.30 EUR
1000+0.24 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C4V3P-E3-08 bzd27series.pdf
BZD27C4V3P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
auf Bestellung 21143 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
47+0.37 EUR
100+0.21 EUR
500+0.19 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C6V2P-E3-08 bzd27series.pdf
BZD27C6V2P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
auf Bestellung 45917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
54+0.33 EUR
109+0.16 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C75P-E3-08 bzd27series.pdf
BZD27C75P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 56 V
auf Bestellung 25270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
30+0.60 EUR
100+0.42 EUR
500+0.33 EUR
1000+0.26 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
RS07G-GS08 rs07b.pdf
RS07G-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 400V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 39241 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
40+0.44 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
S07G-GS08 s07b.pdf
S07G-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 700MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 53699 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
35+0.51 EUR
100+0.25 EUR
500+0.23 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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S07G-GS18 s07b.pdf
S07G-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 700MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 20552 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
35+0.51 EUR
100+0.25 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.16 EUR
5000+0.15 EUR
Mindestbestellmenge: 25
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S07J-GS18 s07b.pdf
S07J-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 700MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 32215 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
49+0.36 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.17 EUR
2000+0.15 EUR
5000+0.14 EUR
Mindestbestellmenge: 33
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BZD27B200P-HE3-18 bzd27bseries.pdf
BZD27B200P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 200V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: AEC-Q101
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