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V20PWM12C-M3/I V20PWM12C-M3/I Vishay General Semiconductor - Diodes Division v20pwm12c.pdf Description: DIODE ARR SCHOTT 120V SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V20PWM60CHM3/I V20PWM60CHM3/I Vishay General Semiconductor - Diodes Division v20pwm60c.pdf Description: DIODE ARR SCHOT 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V35PW10-M3/I V35PW10-M3/I Vishay General Semiconductor - Diodes Division v35pw10.pdf Description: DIODE SCHOTTKY 100V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2500pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 35 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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1000+0.90 EUR
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V35PWM15HM3/I V35PWM15HM3/I Vishay General Semiconductor - Diodes Division v35pwm15.pdf Description: DIODE SCHOTTKY 150V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1620pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 35 A
Current - Reverse Leakage @ Vr: 500 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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V35PWM15-M3/I V35PWM15-M3/I Vishay General Semiconductor - Diodes Division v35pwm15.pdf Description: DIODE SCHOTTKY 150V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1620pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 35 A
Current - Reverse Leakage @ Vr: 500 µA @ 150 V
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V40PW12CHM3/I V40PW12CHM3/I Vishay General Semiconductor - Diodes Division v40pw12c.pdf Description: DIODE ARR SCHOTT 120V SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.03 V @ 20 A
Current - Reverse Leakage @ Vr: 750 µA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V40PW12C-M3/I V40PW12C-M3/I Vishay General Semiconductor - Diodes Division v40pw12c.pdf Description: DIODE ARR SCHOTT 120V SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.03 V @ 20 A
Current - Reverse Leakage @ Vr: 750 µA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V40PWM45C-M3/I V40PWM45C-M3/I Vishay General Semiconductor - Diodes Division v40pwm45c.pdf Description: DIODE ARRAY SCHOTT 45V SLIMDPAK
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VSKY02300603-G4-08 VSKY02300603-G4-08 Vishay General Semiconductor - Diodes Division vsky02300603.pdf Description: DIODE SCHOTT 30V 200MA CLP06032M
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 33pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: CLP0603-2M
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
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VSKY05301006-G4-08 VSKY05301006-G4-08 Vishay General Semiconductor - Diodes Division vsky05301006.pdf Description: DIODE SCHOTT 30V 500MA CLP10062L
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CLP1006-2L
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 30 V
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VSKY05401006-G4-08 VSKY05401006-G4-08 Vishay General Semiconductor - Diodes Division vsky05401006.pdf Description: DIODE SCHOTT 40V 500MA CLP10062L
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CLP1006-2L
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 30 V
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VSKY10201406-G4-08 VSKY10201406-G4-08 Vishay General Semiconductor - Diodes Division vsky10201406.pdf Description: DIODE SCHOTTKY 20V 1A CLP1406-2L
Packaging: Cut Tape (CT)
Package / Case: 0502 (1406 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CLP1406-2L
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
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VSKY10301406-G4-08 VSKY10301406-G4-08 Vishay General Semiconductor - Diodes Division vsky10301406.pdf Description: DIODE SCHOTTKY 30V 1A CLP1406-2L
Packaging: Cut Tape (CT)
Package / Case: 0502 (1406 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 230pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CLP1406-2L
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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VSKY10401406-G4-08 VSKY10401406-G4-08 Vishay General Semiconductor - Diodes Division vsky10401406.pdf Description: DIODE SCHOTTKY 40V 1A CLP1406-2L
Packaging: Cut Tape (CT)
Package / Case: 0502 (1406 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 225pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CLP1406-2L
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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VTVS8V5ASMF-HM3-08 VTVS8V5ASMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 8.5VWM 13.5V DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 1270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 28.24A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 13.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VTVS8V5ASMF-M3-08 VTVS8V5ASMF-M3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 8.5VWM 13.5VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 28.24A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 13.5V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 34191 Stücke:
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V2P6-M3/H V2P6-M3/H Vishay General Semiconductor - Diodes Division v2p6.pdf Description: DIODE SCHOTTKY 60V 2A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 195pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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V2PM10-M3/H V2PM10-M3/H Vishay General Semiconductor - Diodes Division v2pm10.pdf Description: DIODE SCHOTTKY 100V 2A MICROSMP
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V2PM10HM3/H V2PM10HM3/H Vishay General Semiconductor - Diodes Division v2pm10.pdf Description: DIODE SCHOTTKY 100V 2A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
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V1PM12-M3/H V1PM12-M3/H Vishay General Semiconductor - Diodes Division v1pm12.pdf Description: DIODE SCHOTTKY 120V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
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V1PM12HM3/H V1PM12HM3/H Vishay General Semiconductor - Diodes Division v1pm12.pdf Description: DIODE SCHOTTKY 120V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Qualification: AEC-Q101
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V2PM12HM3/H V2PM12HM3/H Vishay General Semiconductor - Diodes Division v2pm12.pdf Description: DIODE SCHOTTKY 120V 2A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Qualification: AEC-Q101
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V1PM15-M3/H V1PM15-M3/H Vishay General Semiconductor - Diodes Division v1pm15.pdf Description: DIODE SCHOTTKY 150V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
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V1PM15HM3/H V1PM15HM3/H Vishay General Semiconductor - Diodes Division v1pm15.pdf Description: DIODE SCHOTTKY 150V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
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VS-EPH3006L-N3 VS-EPH3006L-N3 Vishay General Semiconductor - Diodes Division vs-eph3006l-n3.pdf Description: DIODE GEN PURP 600V 30A TO247AD
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VS-E4PU3006L-N3 VS-E4PU3006L-N3 Vishay General Semiconductor - Diodes Division vs-e4pu3006l-n3.pdf Description: DIODE STANDARD 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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VS-C4PU3006L-N3 VS-C4PU3006L-N3 Vishay General Semiconductor - Diodes Division vs-c4pu3006l-n3.pdf Description: DIODE GEN PURP 600V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
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VS-EPH3006LHN3 VS-EPH3006LHN3 Vishay General Semiconductor - Diodes Division vs-eph3006lhn3.pdf Description: DIODE GEN PURP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Qualification: AEC-Q101
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VS-E4PH6006LHN3 VS-E4PH6006LHN3 Vishay General Semiconductor - Diodes Division vs-e4ph6006lhn3.pdf Description: DIODE STANDARD 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 68 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
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VS-QA250FA20 VS-QA250FA20 Vishay General Semiconductor - Diodes Division vs-qa250fa20.pdf Description: DIODE MOD SCHOT 200V 250A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 54 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 90 µA @ 200 V
auf Bestellung 755 Stücke:
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V8PM10S-M3/I V8PM10S-M3/I Vishay General Semiconductor - Diodes Division v8pm10s.pdf Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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VS-30ETU12T-N3 VS-30ETU12T-N3 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 2.68 V @ 30 A
Current - Reverse Leakage @ Vr: 145 µA @ 1200 V
Produkt ist nicht verfügbar
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VS-30ETU12THN3 VS-30ETU12THN3 Vishay General Semiconductor - Diodes Division vs-30etu12thn3.pdf Description: DIODE GEN PURP 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - Forward (Vf) (Max) @ If: 2.68 V @ 30 A
Current - Reverse Leakage @ Vr: 145 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-ETH3007T-N3 VS-ETH3007T-N3 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 650V 30A TO220AC
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VS-ETH3007THN3 VS-ETH3007THN3 Vishay General Semiconductor - Diodes Division vs-eth3007thn3.pdf Description: DIODE STANDARD 650V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 995 Stücke:
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VS-ETX3007T-N3 VS-ETX3007T-N3 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 650V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
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VS-ETX3007THN3 VS-ETX3007THN3 Vishay General Semiconductor - Diodes Division vs-etx3007hn3.pdf Description: DIODE STANDARD 650V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 255 Stücke:
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SMC5K28A-M3/H SMC5K28A-M3/H Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 110A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMC5K28A-M3/I SMC5K28A-M3/I Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 110A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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SMC5K30A-M3/H SMC5K30A-M3/H Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMC5K30A-M3/I SMC5K30A-M3/I Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 10500 Stücke:
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7000+0.52 EUR
10500+0.50 EUR
Mindestbestellmenge: 3500
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V8KM60DUHM3/H V8KM60DUHM3/H Vishay General Semiconductor - Diodes Division V8KM60DU.pdf Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
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1500+0.28 EUR
3000+0.27 EUR
Mindestbestellmenge: 1500
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V8KM60DUHM3/I V8KM60DUHM3/I Vishay General Semiconductor - Diodes Division V8KM60DU.pdf Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8KM60DU-M3/H V8KM60DU-M3/H Vishay General Semiconductor - Diodes Division V8KM60DU.pdf Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Produkt ist nicht verfügbar
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V8KM60DU-M3/I V8KM60DU-M3/I Vishay General Semiconductor - Diodes Division V8KM60DU.pdf Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
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6000+0.30 EUR
12000+0.28 EUR
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V10KM120DUHM3/H V10KM120DUHM3/H Vishay General Semiconductor - Diodes Division v10km120du.pdf Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10KM120DUHM3/I V10KM120DUHM3/I Vishay General Semiconductor - Diodes Division v10km120du.pdf Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10KM120DU-M3/H V10KM120DU-M3/H Vishay General Semiconductor - Diodes Division v10km120du.pdf Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
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V10KM120DU-M3/I V10KM120DU-M3/I Vishay General Semiconductor - Diodes Division v10km120du.pdf Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Produkt ist nicht verfügbar
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V2P6-M3/H V2P6-M3/H Vishay General Semiconductor - Diodes Division v2p6.pdf Description: DIODE SCHOTTKY 60V 2A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 195pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 17496 Stücke:
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29+0.62 EUR
41+0.43 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.11 EUR
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V2PM10-M3/H V2PM10-M3/H Vishay General Semiconductor - Diodes Division v2pm10.pdf Description: DIODE SCHOTTKY 100V 2A MICROSMP
auf Bestellung 2732 Stücke:
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V2PM10HM3/H V2PM10HM3/H Vishay General Semiconductor - Diodes Division v2pm10.pdf Description: DIODE SCHOTTKY 100V 2A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 29715 Stücke:
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32+0.56 EUR
45+0.39 EUR
100+0.20 EUR
500+0.16 EUR
1000+0.12 EUR
2000+0.10 EUR
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V1PM12-M3/H V1PM12-M3/H Vishay General Semiconductor - Diodes Division v1pm12.pdf Description: DIODE SCHOTTKY 120V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
auf Bestellung 97885 Stücke:
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48+0.37 EUR
106+0.17 EUR
109+0.16 EUR
500+0.12 EUR
1000+0.09 EUR
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V1PM12HM3/H V1PM12HM3/H Vishay General Semiconductor - Diodes Division v1pm12.pdf Description: DIODE SCHOTTKY 120V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 5719 Stücke:
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59+0.30 EUR
89+0.20 EUR
113+0.16 EUR
500+0.12 EUR
1000+0.10 EUR
2000+0.10 EUR
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V2PM12HM3/H V2PM12HM3/H Vishay General Semiconductor - Diodes Division v2pm12.pdf Description: DIODE SCHOTTKY 120V 2A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 14444 Stücke:
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71+0.25 EUR
100+0.20 EUR
500+0.15 EUR
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V1PM15-M3/H V1PM15-M3/H Vishay General Semiconductor - Diodes Division v1pm15.pdf Description: DIODE SCHOTTKY 150V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
auf Bestellung 13040 Stücke:
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V1PM15HM3/H V1PM15HM3/H Vishay General Semiconductor - Diodes Division v1pm15.pdf Description: DIODE SCHOTTKY 150V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 30158 Stücke:
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VS-FC420SA10 VS-FC420SA10 Vishay General Semiconductor - Diodes Division vs-fc420sa10.pdf Description: MOSFET N-CH 100V 435A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 200A, 10V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 750µA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17300 pF @ 25 V
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V8PM10S-M3/I V8PM10S-M3/I Vishay General Semiconductor - Diodes Division v8pm10s.pdf Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
auf Bestellung 18780 Stücke:
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SMC5K28A-M3/H SMC5K28A-M3/H Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 110A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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V20PWM12C-M3/I v20pwm12c.pdf
V20PWM12C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V20PWM60CHM3/I v20pwm60c.pdf
V20PWM60CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V35PW10-M3/I v35pw10.pdf
V35PW10-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2500pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 35 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
auf Bestellung 9858 Stücke:
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8+2.43 EUR
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V35PWM15HM3/I v35pwm15.pdf
V35PWM15HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1620pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 35 A
Current - Reverse Leakage @ Vr: 500 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11576 Stücke:
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V35PWM15-M3/I v35pwm15.pdf
V35PWM15-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1620pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 35 A
Current - Reverse Leakage @ Vr: 500 µA @ 150 V
auf Bestellung 1374 Stücke:
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V40PW12CHM3/I v40pw12c.pdf
V40PW12CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.03 V @ 20 A
Current - Reverse Leakage @ Vr: 750 µA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V40PW12C-M3/I v40pw12c.pdf
V40PW12C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.03 V @ 20 A
Current - Reverse Leakage @ Vr: 750 µA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V40PWM45C-M3/I v40pwm45c.pdf
V40PWM45C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 45V SLIMDPAK
auf Bestellung 3010 Stücke:
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7+2.62 EUR
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VSKY02300603-G4-08 vsky02300603.pdf
VSKY02300603-G4-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 30V 200MA CLP06032M
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 33pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: CLP0603-2M
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
auf Bestellung 14350 Stücke:
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72+0.25 EUR
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VSKY05301006-G4-08 vsky05301006.pdf
VSKY05301006-G4-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 30V 500MA CLP10062L
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CLP1006-2L
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 30 V
auf Bestellung 108914 Stücke:
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VSKY05401006-G4-08 vsky05401006.pdf
VSKY05401006-G4-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 40V 500MA CLP10062L
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CLP1006-2L
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 30 V
auf Bestellung 15308 Stücke:
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VSKY10201406-G4-08 vsky10201406.pdf
VSKY10201406-G4-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A CLP1406-2L
Packaging: Cut Tape (CT)
Package / Case: 0502 (1406 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CLP1406-2L
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
auf Bestellung 4092 Stücke:
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35+0.51 EUR
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VSKY10301406-G4-08 vsky10301406.pdf
VSKY10301406-G4-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A CLP1406-2L
Packaging: Cut Tape (CT)
Package / Case: 0502 (1406 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 230pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CLP1406-2L
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
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VSKY10401406-G4-08 vsky10401406.pdf
VSKY10401406-G4-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A CLP1406-2L
Packaging: Cut Tape (CT)
Package / Case: 0502 (1406 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 225pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CLP1406-2L
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 9575 Stücke:
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24+0.74 EUR
34+0.52 EUR
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500+0.22 EUR
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VTVS8V5ASMF-HM3-08 vtvs3v3asmf.pdf
VTVS8V5ASMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.5VWM 13.5V DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 1270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 28.24A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 13.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30204 Stücke:
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25+0.70 EUR
38+0.47 EUR
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VTVS8V5ASMF-M3-08 vtvs3v3asmf.pdf
VTVS8V5ASMF-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.5VWM 13.5VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 28.24A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 13.5V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 34191 Stücke:
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28+0.63 EUR
37+0.49 EUR
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500+0.27 EUR
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V2P6-M3/H v2p6.pdf
V2P6-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 195pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 9000 Stücke:
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Anzahl Preis
4500+0.11 EUR
9000+0.08 EUR
Mindestbestellmenge: 4500
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V2PM10-M3/H v2pm10.pdf
V2PM10-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A MICROSMP
Produkt ist nicht verfügbar
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V2PM10HM3/H v2pm10.pdf
V2PM10HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.10 EUR
9000+0.08 EUR
Mindestbestellmenge: 4500
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V1PM12-M3/H v1pm12.pdf
V1PM12-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.07 EUR
9000+0.07 EUR
13500+0.06 EUR
22500+0.06 EUR
31500+0.06 EUR
45000+0.05 EUR
Mindestbestellmenge: 4500
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V1PM12HM3/H v1pm12.pdf
V1PM12HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V2PM12HM3/H v2pm12.pdf
V2PM12HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 2A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.10 EUR
9000+0.08 EUR
13500+0.08 EUR
Mindestbestellmenge: 4500
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V1PM15-M3/H v1pm15.pdf
V1PM15-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.09 EUR
9000+0.07 EUR
Mindestbestellmenge: 4500
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V1PM15HM3/H v1pm15.pdf
V1PM15HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.10 EUR
9000+0.08 EUR
Mindestbestellmenge: 4500
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VS-EPH3006L-N3 vs-eph3006l-n3.pdf
VS-EPH3006L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AD
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.68 EUR
Mindestbestellmenge: 5
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VS-E4PU3006L-N3 vs-e4pu3006l-n3.pdf
VS-E4PU3006L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 436 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.48 EUR
25+1.81 EUR
100+1.69 EUR
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VS-C4PU3006L-N3 vs-c4pu3006l-n3.pdf
VS-C4PU3006L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 298 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.89 EUR
25+2.31 EUR
100+1.91 EUR
Mindestbestellmenge: 5
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VS-EPH3006LHN3 vs-eph3006lhn3.pdf
VS-EPH3006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.99 EUR
25+2.39 EUR
100+1.97 EUR
Mindestbestellmenge: 6
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VS-E4PH6006LHN3 vs-e4ph6006lhn3.pdf
VS-E4PH6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 68 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.91 EUR
25+2.89 EUR
100+2.88 EUR
Mindestbestellmenge: 4
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VS-QA250FA20 vs-qa250fa20.pdf
VS-QA250FA20
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SCHOT 200V 250A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 54 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 90 µA @ 200 V
auf Bestellung 755 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.89 EUR
10+31.93 EUR
100+27.08 EUR
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V8PM10S-M3/I v8pm10s.pdf
V8PM10S-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6500+0.28 EUR
13000+0.26 EUR
Mindestbestellmenge: 6500
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VS-30ETU12T-N3
VS-30ETU12T-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 2.68 V @ 30 A
Current - Reverse Leakage @ Vr: 145 µA @ 1200 V
Produkt ist nicht verfügbar
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VS-30ETU12THN3 vs-30etu12thn3.pdf
VS-30ETU12THN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - Forward (Vf) (Max) @ If: 2.68 V @ 30 A
Current - Reverse Leakage @ Vr: 145 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-ETH3007T-N3
VS-ETH3007T-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 650V 30A TO220AC
Produkt ist nicht verfügbar
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VS-ETH3007THN3 vs-eth3007thn3.pdf
VS-ETH3007THN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 650V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
50+1.55 EUR
100+1.51 EUR
500+1.40 EUR
Mindestbestellmenge: 6
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VS-ETX3007T-N3
VS-ETX3007T-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 650V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
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VS-ETX3007THN3 vs-etx3007hn3.pdf
VS-ETX3007THN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 650V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 255 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
50+1.93 EUR
100+1.73 EUR
Mindestbestellmenge: 5
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SMC5K28A-M3/H smc5k10a.pdf
SMC5K28A-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 110A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMC5K28A-M3/I smc5k10a.pdf
SMC5K28A-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 110A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.60 EUR
Mindestbestellmenge: 3500
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SMC5K30A-M3/H smc5k10a.pdf
SMC5K30A-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMC5K30A-M3/I smc5k10a.pdf
SMC5K30A-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.53 EUR
7000+0.52 EUR
10500+0.50 EUR
Mindestbestellmenge: 3500
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V8KM60DUHM3/H V8KM60DU.pdf
V8KM60DUHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.28 EUR
3000+0.27 EUR
Mindestbestellmenge: 1500
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V8KM60DUHM3/I V8KM60DU.pdf
V8KM60DUHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8KM60DU-M3/H V8KM60DU.pdf
V8KM60DU-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
V8KM60DU-M3/I V8KM60DU.pdf
V8KM60DU-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+0.30 EUR
12000+0.28 EUR
Mindestbestellmenge: 6000
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V10KM120DUHM3/H v10km120du.pdf
V10KM120DUHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10KM120DUHM3/I v10km120du.pdf
V10KM120DUHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10KM120DU-M3/H v10km120du.pdf
V10KM120DU-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.41 EUR
Mindestbestellmenge: 1500
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V10KM120DU-M3/I v10km120du.pdf
V10KM120DU-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Produkt ist nicht verfügbar
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V2P6-M3/H v2p6.pdf
V2P6-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 195pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 17496 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
41+0.43 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 29
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V2PM10-M3/H v2pm10.pdf
V2PM10-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A MICROSMP
auf Bestellung 2732 Stücke:
Lieferzeit 10-14 Tag (e)
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V2PM10HM3/H v2pm10.pdf
V2PM10HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 29715 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
45+0.39 EUR
100+0.20 EUR
500+0.16 EUR
1000+0.12 EUR
2000+0.10 EUR
Mindestbestellmenge: 32
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V1PM12-M3/H v1pm12.pdf
V1PM12-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
auf Bestellung 97885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
106+0.17 EUR
109+0.16 EUR
500+0.12 EUR
1000+0.09 EUR
2000+0.09 EUR
Mindestbestellmenge: 48
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V1PM12HM3/H v1pm12.pdf
V1PM12HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 5719 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
89+0.20 EUR
113+0.16 EUR
500+0.12 EUR
1000+0.10 EUR
2000+0.10 EUR
Mindestbestellmenge: 59
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V2PM12HM3/H v2pm12.pdf
V2PM12HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 2A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 14444 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
71+0.25 EUR
100+0.20 EUR
500+0.15 EUR
1000+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 48
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V1PM15-M3/H v1pm15.pdf
V1PM15-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
auf Bestellung 13040 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
47+0.37 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.11 EUR
2000+0.09 EUR
Mindestbestellmenge: 33
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V1PM15HM3/H v1pm15.pdf
V1PM15HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 30158 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
43+0.41 EUR
100+0.20 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.10 EUR
Mindestbestellmenge: 30
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VS-FC420SA10 vs-fc420sa10.pdf
VS-FC420SA10
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 100V 435A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 200A, 10V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 750µA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17300 pF @ 25 V
auf Bestellung 3271 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.02 EUR
10+27.61 EUR
100+23.11 EUR
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V8PM10S-M3/I v8pm10s.pdf
V8PM10S-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
auf Bestellung 18780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
24+0.74 EUR
100+0.52 EUR
500+0.40 EUR
1000+0.33 EUR
2000+0.29 EUR
Mindestbestellmenge: 21
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SMC5K28A-M3/H smc5k10a.pdf
SMC5K28A-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 110A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
auf Bestellung 492 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
15+1.18 EUR
100+0.92 EUR
Mindestbestellmenge: 13
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