Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40657) > Seite 413 nach 678
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GBU8JL-5701M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GBU8JL-6088E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GBU8JL-6088M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GBU8JL-7000E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GBU8JL-7000M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GBU8JL-7014E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GBU8JL-7014M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| GBU8K-3E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GBU8K-3M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GBU8K-4E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GBU8K-4M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GBU8K-5400M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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GBU8K-5410E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GBU8K-5410M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| GBU8K-5E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GBU8K-5M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GBU8K-7000M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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GBU8K-7001M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| GBU8KL-5301E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GBU8KL-5301E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GBU8KL-5301M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GBU8KL-5301M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GBU8KL-5302E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GBU8KL-5302M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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GBU8M-7001E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GBU8ML-7001M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GBU8ML-7014M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 3.9A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| GSIB1520L-801E3/45 | Vishay General Semiconductor - Diodes Division | Description: BRIDGE RECT 1P 200V 3.5A GSIB-5S |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GSIB1560L-801E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GSIB1560L-802E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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GSIB1580-5402E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GSIB1580-5410E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| GSIB15A60L-81E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GSIB15A60L-83E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GSIB15A60L-83E3/72 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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GSIB2560L-803E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| GSIB2560NL-01M3/P | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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GSIB2580-5401E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GSIB2580-5402E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| GSIB660L-5700E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 2.8A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.8 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GSIB6A60L-802E3/45 | Vishay General Semiconductor - Diodes Division | Description: BRIDGE RECT 1P 600V 2.8A GSIB-5S |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GSIB6A60L-803E3/45 | Vishay General Semiconductor - Diodes Division | Description: BRIDGE RECT 1P 600V 2.8A GSIB-5S |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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SB360L-003E3/72 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 60V DO201AD Packaging: Tube Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SB540L-6314E3/72 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 40V DO201AD Packaging: Tube Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SB560L-5705E3/72 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 60V DO201AD Packaging: Tube Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SB560L-6211E3/72 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 60V DO201AD Packaging: Tube Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMBJ100D-M3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 100VWM 159VC DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.77A Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 113V Voltage - Clamping (Max) @ Ipp: 159V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
auf Bestellung 9125 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ10CD-M3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 10VWM 16.7VC DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 35.9A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: DO-214AA (SMBJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 11.3V Voltage - Clamping (Max) @ Ipp: 16.7V Power - Peak Pulse: 600W Power Line Protection: No |
auf Bestellung 3160 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ120D-M3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 120VWM 190VC DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.15A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 135V Voltage - Clamping (Max) @ Ipp: 190V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMBJ12D-M3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 12VWM 19.6VC DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 30.6A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.5V Voltage - Clamping (Max) @ Ipp: 19.6V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
auf Bestellung 2937 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ130D-M3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 130VWM 206VC DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.94A Voltage - Reverse Standoff (Typ): 130V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 146V Voltage - Clamping (Max) @ Ipp: 206V Power - Peak Pulse: 600W Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMBJ13D-M3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 13VWM 21.2VC DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 28.3A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.6V Voltage - Clamping (Max) @ Ipp: 21.2V Power - Peak Pulse: 600W Power Line Protection: No |
auf Bestellung 2841 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ150D-M3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 150VWM 239VC DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.53A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 170V Voltage - Clamping (Max) @ Ipp: 239V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
auf Bestellung 7719 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ15D-M3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 15VWM 24VC DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 25A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 17V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
auf Bestellung 3770 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ160D-M3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 160VWM 256VC DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.34A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 181V Voltage - Clamping (Max) @ Ipp: 256V Power - Peak Pulse: 600W Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMBJ170D-M3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 170VWM 270VC DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.23A Voltage - Reverse Standoff (Typ): 170V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 192V Voltage - Clamping (Max) @ Ipp: 270V Power - Peak Pulse: 600W Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMBJ17D-M3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 17VWM 27.2VC DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 22.1A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 19.2V Voltage - Clamping (Max) @ Ipp: 27.2V Power - Peak Pulse: 600W Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMBJ188D-M3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 188VWM 301VC DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.03A Voltage - Reverse Standoff (Typ): 188V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 212V Voltage - Clamping (Max) @ Ipp: 301V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
auf Bestellung 10782 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ18D-M3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 18VWM 28.8VC DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 20.8A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 20.3V Voltage - Clamping (Max) @ Ipp: 28.8V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
auf Bestellung 2817 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ20D-M3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 20V 32V DO214AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GBU8JL-5701M3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8JL-6088E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8JL-6088M3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8JL-7000E3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8JL-7000M3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8JL-7014E3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8JL-7014M3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8K-3E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8K-3M3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8K-4E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8K-4M3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8K-5400M3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8K-5410E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8K-5410M3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8K-5E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8K-5M3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8K-7000M3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8K-7001M3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8KL-5301E3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8KL-5301E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8KL-5301M3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8KL-5301M3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8KL-5302E3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8KL-5302M3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8M-7001E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8ML-7001M3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8ML-7014M3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GSIB1520L-801E3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 3.5A GSIB-5S
Description: BRIDGE RECT 1P 200V 3.5A GSIB-5S
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GSIB1560L-801E3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GSIB1560L-802E3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GSIB1580-5402E3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GSIB1580-5410E3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GSIB15A60L-81E3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GSIB15A60L-83E3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GSIB15A60L-83E3/72 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GSIB2560L-803E3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GSIB2560NL-01M3/P |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GSIB2580-5401E3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GSIB2580-5402E3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GSIB660L-5700E3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 2.8A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 2.8A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GSIB6A60L-802E3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 2.8A GSIB-5S
Description: BRIDGE RECT 1P 600V 2.8A GSIB-5S
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GSIB6A60L-803E3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 2.8A GSIB-5S
Description: BRIDGE RECT 1P 600V 2.8A GSIB-5S
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SB360L-003E3/72 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V DO201AD
Packaging: Tube
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE ARRAY SCHOTTKY 60V DO201AD
Packaging: Tube
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SB540L-6314E3/72 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V DO201AD
Packaging: Tube
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE ARRAY SCHOTTKY 40V DO201AD
Packaging: Tube
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SB560L-5705E3/72 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V DO201AD
Packaging: Tube
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE ARRAY SCHOTTKY 60V DO201AD
Packaging: Tube
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SB560L-6211E3/72 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V DO201AD
Packaging: Tube
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE ARRAY SCHOTTKY 60V DO201AD
Packaging: Tube
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ100D-M3/I |
![]() |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 159VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.77A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 113V
Voltage - Clamping (Max) @ Ipp: 159V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 100VWM 159VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.77A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 113V
Voltage - Clamping (Max) @ Ipp: 159V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 9125 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 39+ | 0.46 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.19 EUR |
| SMBJ10CD-M3/I |
![]() |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 16.7VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.9A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.3V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 10VWM 16.7VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.9A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.3V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 3160 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 0.92 EUR |
| 32+ | 0.57 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.25 EUR |
| SMBJ120D-M3/I |
![]() |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 120VWM 190VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.15A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 135V
Voltage - Clamping (Max) @ Ipp: 190V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 120VWM 190VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.15A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 135V
Voltage - Clamping (Max) @ Ipp: 190V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ12D-M3/I |
![]() |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.6VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30.6A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.5V
Voltage - Clamping (Max) @ Ipp: 19.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 12VWM 19.6VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30.6A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.5V
Voltage - Clamping (Max) @ Ipp: 19.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 2937 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 0.55 EUR |
| 49+ | 0.36 EUR |
| 102+ | 0.17 EUR |
| SMBJ130D-M3/I |
![]() |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 130VWM 206VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.94A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 146V
Voltage - Clamping (Max) @ Ipp: 206V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 130VWM 206VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.94A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 146V
Voltage - Clamping (Max) @ Ipp: 206V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ13D-M3/I |
![]() |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.2VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.3A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.6V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 13VWM 21.2VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.3A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.6V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 2841 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 0.55 EUR |
| 49+ | 0.36 EUR |
| 102+ | 0.17 EUR |
| SMBJ150D-M3/I |
![]() |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 150VWM 239VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.53A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 170V
Voltage - Clamping (Max) @ Ipp: 239V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 150VWM 239VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.53A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 170V
Voltage - Clamping (Max) @ Ipp: 239V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 7719 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 40+ | 0.45 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| SMBJ15D-M3/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15VWM 24VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 3770 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 0.53 EUR |
| 50+ | 0.36 EUR |
| 118+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| SMBJ160D-M3/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 256VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.34A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 181V
Voltage - Clamping (Max) @ Ipp: 256V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 160VWM 256VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.34A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 181V
Voltage - Clamping (Max) @ Ipp: 256V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ170D-M3/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 170VWM 270VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.23A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 192V
Voltage - Clamping (Max) @ Ipp: 270V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 170VWM 270VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.23A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 192V
Voltage - Clamping (Max) @ Ipp: 270V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ17D-M3/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17VWM 27.2VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.1A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19.2V
Voltage - Clamping (Max) @ Ipp: 27.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 17VWM 27.2VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.1A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19.2V
Voltage - Clamping (Max) @ Ipp: 27.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ188D-M3/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 188VWM 301VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.03A
Voltage - Reverse Standoff (Typ): 188V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 212V
Voltage - Clamping (Max) @ Ipp: 301V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 188VWM 301VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.03A
Voltage - Reverse Standoff (Typ): 188V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 212V
Voltage - Clamping (Max) @ Ipp: 301V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 10782 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 0.81 EUR |
| 32+ | 0.56 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| SMBJ18D-M3/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 28.8VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.3V
Voltage - Clamping (Max) @ Ipp: 28.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 18VWM 28.8VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.3V
Voltage - Clamping (Max) @ Ipp: 28.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 2817 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 0.83 EUR |
| 35+ | 0.51 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |
| SMBJ20D-M3/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20V 32V DO214AA
Description: TVS DIODE 20V 32V DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH




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