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SMPC30AN-M3/H SMPC30AN-M3/H Vishay General Semiconductor - Diodes Division smpc50a.pdf Description: TVS DIODE 30VWM 48.4VC TO277A
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 48.4V
Voltage - Breakdown (Min): 33.3V
Unidirectional Channels: 1
Supplier Device Package: TO-277A (SMPC)
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 31A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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SMPC30AN-M3/H SMPC30AN-M3/H Vishay General Semiconductor - Diodes Division smpc50a.pdf Description: TVS DIODE 30VWM 48.4VC TO277A
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 48.4V
Voltage - Breakdown (Min): 33.3V
Unidirectional Channels: 1
Supplier Device Package: TO-277A (SMPC)
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 31A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
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5KASMC30AHM3_A/H 5KASMC30AHM3_A/H Vishay General Semiconductor - Diodes Division 5kasmc.pdf Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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5KASMC30AHM3_A/H 5KASMC30AHM3_A/H Vishay General Semiconductor - Diodes Division 5kasmc.pdf Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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GSOT12C-G3-08 GSOT12C-G3-08 Vishay General Semiconductor - Diodes Division gsot03c.pdf Description: TVS DIODE 12VWM 26VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 115pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 13.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 312W
Power Line Protection: No
Part Status: Active
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GSOT12C-G3-08 GSOT12C-G3-08 Vishay General Semiconductor - Diodes Division gsot03c.pdf Description: TVS DIODE 12VWM 26VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 115pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 13.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 312W
Power Line Protection: No
Part Status: Active
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GSOT12C-HE3-08 GSOT12C-HE3-08 Vishay General Semiconductor - Diodes Division gsot03c.pdf Description: TVS DIODE 12VWM 26VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 115pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 13.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 312W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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GSOT12C-HE3-08 GSOT12C-HE3-08 Vishay General Semiconductor - Diodes Division gsot03c.pdf Description: TVS DIODE 12VWM 26VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 115pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 13.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 312W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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BZT52C6V8-E3-08 BZT52C6V8-E3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 6.8V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
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BZT52C6V8-E3-08 BZT52C6V8-E3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 6.8V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
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BZT52C6V8-HE3-08 BZT52C6V8-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 6.8V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
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BZT52C6V8-HE3-08 BZT52C6V8-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 6.8V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TZS4689-GS08 TZS4689-GS08 Vishay General Semiconductor - Diodes Division TZS4678_to_TZS4717_Rev1.9_22-Feb-18.pdf Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
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TZS4689-GS08 TZS4689-GS08 Vishay General Semiconductor - Diodes Division TZS4678_to_TZS4717_Rev1.9_22-Feb-18.pdf Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
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MMBZ5226B-E3-08 MMBZ5226B-E3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.3V 225MW SOT23-3
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Power - Max: 225 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MMBZ5226B-E3-08 MMBZ5226B-E3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.3V 225MW SOT23-3
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Power - Max: 225 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 28 Ohms
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BZT55C11-GS08 BZT55C11-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 11V 500MW SOD80
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 QuadroMELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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BZT55C11-GS08 BZT55C11-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 11V 500MW SOD80
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 QuadroMELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±5%
Packaging: Cut Tape (CT)
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ZPY12-TR ZPY12-TR Vishay General Semiconductor - Diodes Division zpy3v9.pdf Description: DIODE ZENER 12V 1.3W DO41
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ZPY12-TR ZPY12-TR Vishay General Semiconductor - Diodes Division zpy3v9.pdf Description: DIODE ZENER 12V 1.3W DO41
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ZPY12-TAP ZPY12-TAP Vishay General Semiconductor - Diodes Division zpy3v9.pdf Description: DIODE ZENER 12V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 9 V
Qualification: AEC-Q101
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ZPY12-TAP ZPY12-TAP Vishay General Semiconductor - Diodes Division zpy3v9.pdf Description: DIODE ZENER 12V 1.3W DO41
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 9 V
Qualification: AEC-Q101
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MMSZ4687-E3-08 MMSZ4687-E3-08 Vishay General Semiconductor - Diodes Division mmsz4681_to_mmsz4717.pdf Description: DIODE ZENER 4.3V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
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MMSZ4687-E3-08 MMSZ4687-E3-08 Vishay General Semiconductor - Diodes Division mmsz4681_to_mmsz4717.pdf Description: DIODE ZENER 4.3V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
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P6SMB220AHE3_A/H P6SMB220AHE3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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P6SMB220AHM3_A/H P6SMB220AHM3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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TLZ5V1C-GS08 TLZ5V1C-GS08 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
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TLZ5V1C-GS08 TLZ5V1C-GS08 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 7661 Stücke:
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145+0.14 EUR
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BZX84B11-E3-08 BZX84B11-E3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 11V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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BZX84B11-E3-08 BZX84B11-E3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 11V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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V1P6HM3/H V1P6HM3/H Vishay General Semiconductor - Diodes Division v1p6.pdf Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
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V1P6HM3/H V1P6HM3/H Vishay General Semiconductor - Diodes Division v1p6.pdf Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
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V1PL45HM3/H V1PL45HM3/H Vishay General Semiconductor - Diodes Division v1pl45.pdf Description: DIODE SCHOTTKY 45V 1A MICROSMP
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VS-8EWF12SLHM3 VS-8EWF12SLHM3 Vishay General Semiconductor - Diodes Division vs-8ewf12slhm3.pdf Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-8EWF12SLHM3 VS-8EWF12SLHM3 Vishay General Semiconductor - Diodes Division vs-8ewf12slhm3.pdf Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
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500+2.42 EUR
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V40D60C-M3/I V40D60C-M3/I Vishay General Semiconductor - Diodes Division v40d60c.pdf Description: DIODE ARR SCHOTT 60V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Produkt ist nicht verfügbar
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V40D60C-M3/I V40D60C-M3/I Vishay General Semiconductor - Diodes Division v40d60c.pdf Description: DIODE ARR SCHOTT 60V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Produkt ist nicht verfügbar
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V40D60CHM3/I V40D60CHM3/I Vishay General Semiconductor - Diodes Division v40d60c.pdf Description: DIODE ARR SCHOTT 60V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V40D45C-M3/I V40D45C-M3/I Vishay General Semiconductor - Diodes Division v40d45c.pdf Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V
Produkt ist nicht verfügbar
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V40D45CHM3/I V40D45CHM3/I Vishay General Semiconductor - Diodes Division v40d45c.pdf Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-6CWQ04FNHM3 VS-6CWQ04FNHM3 Vishay General Semiconductor - Diodes Division vs6cwq04fn.pdf Description: DIODE ARRAY SCHOTT 40V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-6CWQ04FNTR-M3 VS-6CWQ04FNTR-M3 Vishay General Semiconductor - Diodes Division vs-6cwq04fn.pdf Description: DIODE ARRAY SCHOTT 40V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
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VS-6CWQ04FNTR-M3 VS-6CWQ04FNTR-M3 Vishay General Semiconductor - Diodes Division vs-6cwq04fn.pdf Description: DIODE ARRAY SCHOTT 40V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
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500+0.7 EUR
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VS-6CWQ04FN-M3 VS-6CWQ04FN-M3 Vishay General Semiconductor - Diodes Division vs-6cwq04fn.pdf Description: DIODE ARRAY SCHOTT 40V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
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MBRB1045-E3/81 MBRB1045-E3/81 Vishay General Semiconductor - Diodes Division mbr10xx.pdf Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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MBRB1045-E3/81 MBRB1045-E3/81 Vishay General Semiconductor - Diodes Division mbr10xx.pdf Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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MBRB1090-E3/8W MBRB1090-E3/8W Vishay General Semiconductor - Diodes Division mbr10100-m3.pdf Description: DIODE SCHOTTKY 90V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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MBRB1090-E3/8W MBRB1090-E3/8W Vishay General Semiconductor - Diodes Division mbr10100-m3.pdf Description: DIODE SCHOTTKY 90V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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MBRB10H100-E3/45 MBRB10H100-E3/45 Vishay General Semiconductor - Diodes Division mbr10hxx.pdf Description: DIODE SCHOTTKY 100V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
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V15PL50-M3/86A V15PL50-M3/86A Vishay General Semiconductor - Diodes Division v15pl50.pdf Description: DIODE SCHOTTKY 50V 6A TO277A
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V15PL50-M3/86A V15PL50-M3/86A Vishay General Semiconductor - Diodes Division v15pl50.pdf Description: DIODE SCHOTTKY 50V 6A TO277A
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VS-20ETS08S-M3 VS-20ETS08S-M3 Vishay General Semiconductor - Diodes Division vs-20ets08s.pdf Description: DIODE GEN PURP 800V 20A TO263AB
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
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MCL4151-TR MCL4151-TR Vishay General Semiconductor - Diodes Division mcl4151.pdf Description: DIODE STD 75V 200MA MICROMELF
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Grade: Automotive
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
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MCL4151-TR MCL4151-TR Vishay General Semiconductor - Diodes Division mcl4151.pdf Description: DIODE STD 75V 200MA MICROMELF
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Grade: Automotive
Operating Temperature - Junction: 125°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 200mA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
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500+0.15 EUR
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3KASMC33AHE3_B/H 3KASMC33AHE3_B/H Vishay General Semiconductor - Diodes Division 3kasmc.pdf Description: TVS DIODE 33VWM 53.3VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 56.3A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Power - Peak Pulse: 3000W (3kW)
Produkt ist nicht verfügbar
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3KASMC33AHE3_B/H 3KASMC33AHE3_B/H Vishay General Semiconductor - Diodes Division 3kasmc.pdf Description: TVS DIODE 33VWM 53.3VC DO214AB
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 56.3A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
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VS-30CTQ100S-M3 VS-30CTQ100S-M3 Vishay General Semiconductor - Diodes Division vs-30ctqs-m3-series.pdf Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
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VS-30CTQ100STRL-M3 VS-30CTQ100STRL-M3 Vishay General Semiconductor - Diodes Division vs-30ctqs-m3-series.pdf Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
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VS-30CTQ100STRR-M3 VS-30CTQ100STRR-M3 Vishay General Semiconductor - Diodes Division vs-30ctqs-m3-series.pdf Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Produkt ist nicht verfügbar
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GP30M-E3/54 GP30M-E3/54 Vishay General Semiconductor - Diodes Division GP30x.pdf Description: DIODE STANDARD 1000V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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SMPC30AN-M3/H smpc50a.pdf
SMPC30AN-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC TO277A
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 48.4V
Voltage - Breakdown (Min): 33.3V
Unidirectional Channels: 1
Supplier Device Package: TO-277A (SMPC)
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 31A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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SMPC30AN-M3/H smpc50a.pdf
SMPC30AN-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC TO277A
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 48.4V
Voltage - Breakdown (Min): 33.3V
Unidirectional Channels: 1
Supplier Device Package: TO-277A (SMPC)
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 31A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
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5KASMC30AHM3_A/H 5kasmc.pdf
5KASMC30AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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5KASMC30AHM3_A/H 5kasmc.pdf
5KASMC30AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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10+2.71 EUR
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GSOT12C-G3-08 gsot03c.pdf
GSOT12C-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 26VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 115pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 13.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 312W
Power Line Protection: No
Part Status: Active
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3000+0.19 EUR
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9000+0.17 EUR
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GSOT12C-G3-08 gsot03c.pdf
GSOT12C-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 26VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 115pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 13.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 312W
Power Line Protection: No
Part Status: Active
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24+0.88 EUR
39+0.55 EUR
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GSOT12C-HE3-08 gsot03c.pdf
GSOT12C-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 26VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 115pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 13.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 312W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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3000+0.19 EUR
6000+0.18 EUR
9000+0.17 EUR
15000+0.15 EUR
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GSOT12C-HE3-08 gsot03c.pdf
GSOT12C-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 26VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 115pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 13.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 312W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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24+0.9 EUR
39+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
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BZT52C6V8-E3-08 bzt52.pdf
BZT52C6V8-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Produkt ist nicht verfügbar
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BZT52C6V8-E3-08 bzt52.pdf
BZT52C6V8-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
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BZT52C6V8-HE3-08 bzt52.pdf
BZT52C6V8-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C6V8-HE3-08 bzt52.pdf
BZT52C6V8-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TZS4689-GS08 TZS4678_to_TZS4717_Rev1.9_22-Feb-18.pdf
TZS4689-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
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2500+0.14 EUR
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TZS4689-GS08 TZS4678_to_TZS4717_Rev1.9_22-Feb-18.pdf
TZS4689-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8908 Stücke:
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MMBZ5226B-E3-08
MMBZ5226B-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 225MW SOT23-3
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Power - Max: 225 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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3000+0.068 EUR
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MMBZ5226B-E3-08
MMBZ5226B-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 225MW SOT23-3
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Power - Max: 225 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 28 Ohms
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53+0.39 EUR
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BZT55C11-GS08 bzt55.pdf
BZT55C11-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW SOD80
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 QuadroMELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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2500+0.071 EUR
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BZT55C11-GS08 bzt55.pdf
BZT55C11-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW SOD80
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 QuadroMELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 8847 Stücke:
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91+0.23 EUR
132+0.15 EUR
272+0.077 EUR
500+0.075 EUR
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ZPY12-TR zpy3v9.pdf
ZPY12-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.3W DO41
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ZPY12-TR zpy3v9.pdf
ZPY12-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.3W DO41
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ZPY12-TAP zpy3v9.pdf
ZPY12-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 9 V
Qualification: AEC-Q101
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5000+0.12 EUR
10000+0.1 EUR
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ZPY12-TAP zpy3v9.pdf
ZPY12-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.3W DO41
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 9 V
Qualification: AEC-Q101
auf Bestellung 6020 Stücke:
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31+0.69 EUR
44+0.48 EUR
100+0.24 EUR
500+0.2 EUR
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MMSZ4687-E3-08 mmsz4681_to_mmsz4717.pdf
MMSZ4687-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
auf Bestellung 12000 Stücke:
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3000+0.086 EUR
6000+0.079 EUR
9000+0.065 EUR
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MMSZ4687-E3-08 mmsz4681_to_mmsz4717.pdf
MMSZ4687-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
auf Bestellung 20857 Stücke:
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AnzahlPrivatkunde
40+0.52 EUR
61+0.35 EUR
124+0.17 EUR
500+0.14 EUR
1000+0.099 EUR
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P6SMB220AHE3_A/H p6smb.pdf
P6SMB220AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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P6SMB220AHM3_A/H p6smb.pdf
P6SMB220AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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TLZ5V1C-GS08 tlz.pdf
TLZ5V1C-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
2500+0.087 EUR
5000+0.077 EUR
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TLZ5V1C-GS08 tlz.pdf
TLZ5V1C-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 7661 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
91+0.23 EUR
145+0.14 EUR
241+0.087 EUR
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BZX84B11-E3-08 bzx84_series.pdf
BZX84B11-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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BZX84B11-E3-08 bzx84_series.pdf
BZX84B11-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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V1P6HM3/H v1p6.pdf
V1P6HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 31500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4500+0.08 EUR
9000+0.075 EUR
Mindestbestellmenge: 4500 Stücke
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V1P6HM3/H v1p6.pdf
V1P6HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 35648 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
75+0.29 EUR
114+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
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V1PL45HM3/H v1pl45.pdf
V1PL45HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 1A MICROSMP
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
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VS-8EWF12SLHM3 vs-8ewf12slhm3.pdf
VS-8EWF12SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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VS-8EWF12SLHM3 vs-8ewf12slhm3.pdf
VS-8EWF12SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 2499 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.53 EUR
10+4.26 EUR
100+2.96 EUR
500+2.42 EUR
1000+2.36 EUR
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V40D60C-M3/I v40d60c.pdf
V40D60C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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V40D60C-M3/I v40d60c.pdf
V40D60C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Produkt ist nicht verfügbar
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V40D60CHM3/I v40d60c.pdf
V40D60CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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V40D45C-M3/I v40d45c.pdf
V40D45C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V
Produkt ist nicht verfügbar
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V40D45CHM3/I v40d45c.pdf
V40D45CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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VS-6CWQ04FNHM3 vs6cwq04fn.pdf
VS-6CWQ04FNHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 40V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-6CWQ04FNTR-M3 vs-6cwq04fn.pdf
VS-6CWQ04FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 40V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
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VS-6CWQ04FNTR-M3 vs-6cwq04fn.pdf
VS-6CWQ04FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 40V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
auf Bestellung 3154 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.7 EUR
19+1.12 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.63 EUR
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VS-6CWQ04FN-M3 vs-6cwq04fn.pdf
VS-6CWQ04FN-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 40V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
auf Bestellung 1497 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.65 EUR
75+0.86 EUR
150+0.81 EUR
525+0.68 EUR
1050+0.62 EUR
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MBRB1045-E3/81 mbr10xx.pdf
MBRB1045-E3/81
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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MBRB1045-E3/81 mbr10xx.pdf
MBRB1045-E3/81
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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MBRB1090-E3/8W mbr10100-m3.pdf
MBRB1090-E3/8W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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MBRB1090-E3/8W mbr10100-m3.pdf
MBRB1090-E3/8W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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MBRB10H100-E3/45 mbr10hxx.pdf
MBRB10H100-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
auf Bestellung 742 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3 EUR
10+2.45 EUR
100+1.9 EUR
500+1.62 EUR
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V15PL50-M3/86A v15pl50.pdf
V15PL50-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 6A TO277A
auf Bestellung 7500 Stücke:
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V15PL50-M3/86A v15pl50.pdf
V15PL50-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 6A TO277A
auf Bestellung 9120 Stücke:
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VS-20ETS08S-M3 vs-20ets08s.pdf
VS-20ETS08S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO263AB
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
auf Bestellung 5961 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.97 EUR
50+3.19 EUR
100+2.63 EUR
500+2.23 EUR
1000+1.88 EUR
2000+1.78 EUR
5000+1.73 EUR
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MCL4151-TR mcl4151.pdf
MCL4151-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 75V 200MA MICROMELF
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Grade: Automotive
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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2500+0.11 EUR
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MCL4151-TR mcl4151.pdf
MCL4151-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 75V 200MA MICROMELF
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Grade: Automotive
Operating Temperature - Junction: 125°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 200mA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
auf Bestellung 3858 Stücke:
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39+0.55 EUR
64+0.33 EUR
103+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
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3KASMC33AHE3_B/H 3kasmc.pdf
3KASMC33AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 56.3A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Power - Peak Pulse: 3000W (3kW)
Produkt ist nicht verfügbar
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3KASMC33AHE3_B/H 3kasmc.pdf
3KASMC33AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AB
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 56.3A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-30CTQ100S-M3 vs-30ctqs-m3-series.pdf
VS-30CTQ100S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
auf Bestellung 8898 Stücke:
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4+6.89 EUR
50+3.46 EUR
100+3.13 EUR
500+2.55 EUR
1000+2.36 EUR
2000+2.2 EUR
5000+2.05 EUR
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VS-30CTQ100STRL-M3 vs-30ctqs-m3-series.pdf
VS-30CTQ100STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.43 EUR
1600+2.26 EUR
2400+2.18 EUR
4000+2.08 EUR
5600+2.06 EUR
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VS-30CTQ100STRR-M3 vs-30ctqs-m3-series.pdf
VS-30CTQ100STRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Produkt ist nicht verfügbar
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GP30M-E3/54 GP30x.pdf
GP30M-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1400 Stücke
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