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BZT55C11-GS08 BZT55C11-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 11V 500MW SOD80
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 QuadroMELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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BZT55C11-GS08 BZT55C11-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 11V 500MW SOD80
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 QuadroMELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±5%
Packaging: Cut Tape (CT)
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ZPY12-TR ZPY12-TR Vishay General Semiconductor - Diodes Division zpy3v9.pdf Description: DIODE ZENER 12V 1.3W DO41
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ZPY12-TR ZPY12-TR Vishay General Semiconductor - Diodes Division zpy3v9.pdf Description: DIODE ZENER 12V 1.3W DO41
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ZPY12-TAP ZPY12-TAP Vishay General Semiconductor - Diodes Division zpy3v9.pdf Description: DIODE ZENER 12V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 9 V
Qualification: AEC-Q101
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ZPY12-TAP ZPY12-TAP Vishay General Semiconductor - Diodes Division zpy3v9.pdf Description: DIODE ZENER 12V 1.3W DO41
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 9 V
Qualification: AEC-Q101
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MMSZ4687-E3-08 MMSZ4687-E3-08 Vishay General Semiconductor - Diodes Division mmsz4681_to_mmsz4717.pdf Description: DIODE ZENER 4.3V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
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MMSZ4687-E3-08 MMSZ4687-E3-08 Vishay General Semiconductor - Diodes Division mmsz4681_to_mmsz4717.pdf Description: DIODE ZENER 4.3V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
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P6SMB220AHE3_A/H P6SMB220AHE3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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P6SMB220AHM3_A/H P6SMB220AHM3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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TLZ5V1C-GS08 TLZ5V1C-GS08 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
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TLZ5V1C-GS08 TLZ5V1C-GS08 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
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BZX84B11-E3-08 BZX84B11-E3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 11V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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BZX84B11-E3-08 BZX84B11-E3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 11V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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V1P6HM3/H V1P6HM3/H Vishay General Semiconductor - Diodes Division v1p6.pdf Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
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V1P6HM3/H V1P6HM3/H Vishay General Semiconductor - Diodes Division v1p6.pdf Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
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V1PL45HM3/H V1PL45HM3/H Vishay General Semiconductor - Diodes Division v1pl45.pdf Description: DIODE SCHOTTKY 45V 1A MICROSMP
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VS-8EWF12SLHM3 VS-8EWF12SLHM3 Vishay General Semiconductor - Diodes Division vs-8ewf12slhm3.pdf Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
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VS-8EWF12SLHM3 VS-8EWF12SLHM3 Vishay General Semiconductor - Diodes Division vs-8ewf12slhm3.pdf Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
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V40D60C-M3/I V40D60C-M3/I Vishay General Semiconductor - Diodes Division v40d60c.pdf Description: DIODE ARR SCHOTT 60V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
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V40D60C-M3/I V40D60C-M3/I Vishay General Semiconductor - Diodes Division v40d60c.pdf Description: DIODE ARR SCHOTT 60V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
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V40D60CHM3/I V40D60CHM3/I Vishay General Semiconductor - Diodes Division v40d60c.pdf Description: DIODE ARR SCHOTT 60V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V40D45C-M3/I V40D45C-M3/I Vishay General Semiconductor - Diodes Division v40d45c.pdf Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V
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V40D45CHM3/I V40D45CHM3/I Vishay General Semiconductor - Diodes Division v40d45c.pdf Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-6CWQ04FNHM3 VS-6CWQ04FNHM3 Vishay General Semiconductor - Diodes Division vs6cwq04fn.pdf Description: DIODE ARRAY SCHOTT 40V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-6CWQ04FNTR-M3 VS-6CWQ04FNTR-M3 Vishay General Semiconductor - Diodes Division vs-6cwq04fn.pdf Description: DIODE ARRAY SCHOTT 40V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
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VS-6CWQ04FNTR-M3 VS-6CWQ04FNTR-M3 Vishay General Semiconductor - Diodes Division vs-6cwq04fn.pdf Description: DIODE ARRAY SCHOTT 40V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
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VS-6CWQ04FN-M3 VS-6CWQ04FN-M3 Vishay General Semiconductor - Diodes Division vs-6cwq04fn.pdf Description: DIODE ARRAY SCHOTT 40V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
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MBRB1045-E3/81 MBRB1045-E3/81 Vishay General Semiconductor - Diodes Division mbr10xx.pdf Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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MBRB1045-E3/81 MBRB1045-E3/81 Vishay General Semiconductor - Diodes Division mbr10xx.pdf Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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MBRB1090-E3/8W MBRB1090-E3/8W Vishay General Semiconductor - Diodes Division mbr10100-m3.pdf Description: DIODE SCHOTTKY 90V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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MBRB1090-E3/8W MBRB1090-E3/8W Vishay General Semiconductor - Diodes Division mbr10100-m3.pdf Description: DIODE SCHOTTKY 90V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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MBRB10H100-E3/45 MBRB10H100-E3/45 Vishay General Semiconductor - Diodes Division mbr10hxx.pdf Description: DIODE SCHOTTKY 100V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
auf Bestellung 742 Stücke:
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100+1.9 EUR
500+1.62 EUR
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V15PL50-M3/86A V15PL50-M3/86A Vishay General Semiconductor - Diodes Division v15pl50.pdf Description: DIODE SCHOTTKY 50V 6A TO277A
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V15PL50-M3/86A V15PL50-M3/86A Vishay General Semiconductor - Diodes Division v15pl50.pdf Description: DIODE SCHOTTKY 50V 6A TO277A
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VS-20ETS08S-M3 VS-20ETS08S-M3 Vishay General Semiconductor - Diodes Division vs-20ets08s.pdf Description: DIODE GEN PURP 800V 20A TO263AB
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
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50+3.19 EUR
100+2.63 EUR
500+2.23 EUR
1000+1.88 EUR
2000+1.78 EUR
5000+1.73 EUR
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MCL4151-TR MCL4151-TR Vishay General Semiconductor - Diodes Division mcl4151.pdf Description: DIODE STD 75V 200MA MICROMELF
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Grade: Automotive
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
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MCL4151-TR MCL4151-TR Vishay General Semiconductor - Diodes Division mcl4151.pdf Description: DIODE STD 75V 200MA MICROMELF
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Grade: Automotive
Operating Temperature - Junction: 125°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 200mA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
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64+0.33 EUR
103+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
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3KASMC33AHE3_B/H 3KASMC33AHE3_B/H Vishay General Semiconductor - Diodes Division 3kasmc.pdf Description: TVS DIODE 33VWM 53.3VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 56.3A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Power - Peak Pulse: 3000W (3kW)
Produkt ist nicht verfügbar
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3KASMC33AHE3_B/H 3KASMC33AHE3_B/H Vishay General Semiconductor - Diodes Division 3kasmc.pdf Description: TVS DIODE 33VWM 53.3VC DO214AB
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 56.3A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-30CTQ100S-M3 VS-30CTQ100S-M3 Vishay General Semiconductor - Diodes Division vs-30ctqs-m3-series.pdf Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
auf Bestellung 8898 Stücke:
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50+3.38 EUR
100+3.06 EUR
500+2.49 EUR
1000+2.31 EUR
2000+2.15 EUR
5000+2 EUR
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VS-30CTQ100STRL-M3 VS-30CTQ100STRL-M3 Vishay General Semiconductor - Diodes Division vs-30ctqs-m3-series.pdf Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
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800+2.37 EUR
1600+2.21 EUR
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4000+2.03 EUR
5600+2.01 EUR
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VS-30CTQ100STRR-M3 VS-30CTQ100STRR-M3 Vishay General Semiconductor - Diodes Division vs-30ctqs-m3-series.pdf Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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GP30M-E3/54 GP30M-E3/54 Vishay General Semiconductor - Diodes Division GP30x.pdf Description: DIODE STANDARD 1000V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1400 Stücke
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GP30M-E3/54 GP30M-E3/54 Vishay General Semiconductor - Diodes Division GP30x.pdf Description: DIODE STANDARD 1000V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
auf Bestellung 241 Stücke:
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8+2.98 EUR
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GP30M-E3/73 GP30M-E3/73 Vishay General Semiconductor - Diodes Division GP30x.pdf Description: DIODE STANDARD 1000V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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GP30M-E3/73 GP30M-E3/73 Vishay General Semiconductor - Diodes Division GP30x.pdf Description: DIODE STANDARD 1000V 3A DO201AD
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Produkt ist nicht verfügbar
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BZG03C270-M3-08 BZG03C270-M3-08 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 270V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 1000 Ohms
Voltage - Zener (Nom) (Vz): 270 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±7.04%
Packaging: Tape & Reel (TR)
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BZG03C270-M3-08 BZG03C270-M3-08 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 270V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 1000 Ohms
Voltage - Zener (Nom) (Vz): 270 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±7.04%
Packaging: Cut Tape (CT)
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BZG03C20-HM3-08 BZG03C20-HM3-08 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 20V 1.25W DO214AC
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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BZG03C20-HM3-08 BZG03C20-HM3-08 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 20V 1.25W DO214AC
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
Qualification: AEC-Q101
auf Bestellung 1384 Stücke:
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BZG03C270-HM3-08 BZG03C270-HM3-08 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 270V 1.25W DO214AC
Tolerance: ±7.04%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 270 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.4 EUR
3000+0.37 EUR
4500+0.36 EUR
7500+0.29 EUR
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BZG03C270-HM3-08 BZG03C270-HM3-08 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 270V 1.25W DO214AC
Tolerance: ±7.04%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 270 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 9141 Stücke:
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38+0.56 EUR
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500+0.4 EUR
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BZG03C22-HM3-08 BZG03C22-HM3-08 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 22V 1.25W DO214AC
Tolerance: ±5.68%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
auf Bestellung 1500 Stücke:
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1500+0.4 EUR
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BZG03C22-HM3-08 BZG03C22-HM3-08 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 22V 1.25W DO214AC
Tolerance: ±5.68%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
auf Bestellung 2748 Stücke:
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20+1.05 EUR
24+0.89 EUR
100+0.67 EUR
500+0.52 EUR
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BZG03C220-HM3-08 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 220V 1.25W DO214AC
Tolerance: ±5.68%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 220 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 160 V
Qualification: AEC-Q101
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BZG03C220-HM3-08 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 220V 1.25W DO214AC
Tolerance: ±5.68%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 220 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 160 V
Qualification: AEC-Q101
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BAS34-TAP BAS34-TAP Vishay General Semiconductor - Diodes Division bas33.pdf Description: DIODE GEN PURP 60V 200MA DO35
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 1 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
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BAS34-TAP BAS34-TAP Vishay General Semiconductor - Diodes Division bas33.pdf Description: DIODE GEN PURP 60V 200MA DO35
Current - Reverse Leakage @ Vr: 1 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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BAV19-TR BAV19-TR Vishay General Semiconductor - Diodes Division bav17.pdf Description: DIODE STD 100V 250MA DO204AH
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
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BZT55C11-GS08 bzt55.pdf
BZT55C11-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW SOD80
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 QuadroMELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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BZT55C11-GS08 bzt55.pdf
BZT55C11-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW SOD80
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 QuadroMELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±5%
Packaging: Cut Tape (CT)
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ZPY12-TR zpy3v9.pdf
ZPY12-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.3W DO41
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ZPY12-TR zpy3v9.pdf
ZPY12-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.3W DO41
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ZPY12-TAP zpy3v9.pdf
ZPY12-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 9 V
Qualification: AEC-Q101
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ZPY12-TAP zpy3v9.pdf
ZPY12-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.3W DO41
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 9 V
Qualification: AEC-Q101
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MMSZ4687-E3-08 mmsz4681_to_mmsz4717.pdf
MMSZ4687-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
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3000+0.086 EUR
6000+0.079 EUR
9000+0.065 EUR
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MMSZ4687-E3-08 mmsz4681_to_mmsz4717.pdf
MMSZ4687-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
auf Bestellung 20857 Stücke:
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40+0.52 EUR
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P6SMB220AHE3_A/H p6smb.pdf
P6SMB220AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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P6SMB220AHM3_A/H p6smb.pdf
P6SMB220AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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TLZ5V1C-GS08 tlz.pdf
TLZ5V1C-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
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2500+0.087 EUR
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TLZ5V1C-GS08 tlz.pdf
TLZ5V1C-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 7661 Stücke:
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91+0.23 EUR
145+0.14 EUR
241+0.087 EUR
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BZX84B11-E3-08 bzx84_series.pdf
BZX84B11-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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BZX84B11-E3-08 bzx84_series.pdf
BZX84B11-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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V1P6HM3/H v1p6.pdf
V1P6HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 31500 Stücke:
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4500+0.08 EUR
9000+0.075 EUR
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V1P6HM3/H v1p6.pdf
V1P6HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
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50+0.42 EUR
75+0.29 EUR
114+0.19 EUR
500+0.14 EUR
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2000+0.11 EUR
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V1PL45HM3/H v1pl45.pdf
V1PL45HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 1A MICROSMP
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VS-8EWF12SLHM3 vs-8ewf12slhm3.pdf
VS-8EWF12SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-8EWF12SLHM3 vs-8ewf12slhm3.pdf
VS-8EWF12SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 2499 Stücke:
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4+6.53 EUR
10+4.26 EUR
100+2.96 EUR
500+2.42 EUR
1000+2.36 EUR
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V40D60C-M3/I v40d60c.pdf
V40D60C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Produkt ist nicht verfügbar
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V40D60C-M3/I v40d60c.pdf
V40D60C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Produkt ist nicht verfügbar
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V40D60CHM3/I v40d60c.pdf
V40D60CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V40D45C-M3/I v40d45c.pdf
V40D45C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V
Produkt ist nicht verfügbar
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V40D45CHM3/I v40d45c.pdf
V40D45CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-6CWQ04FNHM3 vs6cwq04fn.pdf
VS-6CWQ04FNHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 40V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-6CWQ04FNTR-M3 vs-6cwq04fn.pdf
VS-6CWQ04FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 40V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
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VS-6CWQ04FNTR-M3 vs-6cwq04fn.pdf
VS-6CWQ04FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 40V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
auf Bestellung 3154 Stücke:
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13+1.7 EUR
19+1.12 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.63 EUR
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VS-6CWQ04FN-M3 vs-6cwq04fn.pdf
VS-6CWQ04FN-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 40V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
auf Bestellung 1497 Stücke:
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13+1.65 EUR
75+0.86 EUR
150+0.81 EUR
525+0.68 EUR
1050+0.62 EUR
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MBRB1045-E3/81 mbr10xx.pdf
MBRB1045-E3/81
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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MBRB1045-E3/81 mbr10xx.pdf
MBRB1045-E3/81
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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MBRB1090-E3/8W mbr10100-m3.pdf
MBRB1090-E3/8W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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MBRB1090-E3/8W mbr10100-m3.pdf
MBRB1090-E3/8W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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MBRB10H100-E3/45 mbr10hxx.pdf
MBRB10H100-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
auf Bestellung 742 Stücke:
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7+3 EUR
10+2.45 EUR
100+1.9 EUR
500+1.62 EUR
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V15PL50-M3/86A v15pl50.pdf
V15PL50-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 6A TO277A
auf Bestellung 7500 Stücke:
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V15PL50-M3/86A v15pl50.pdf
V15PL50-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 6A TO277A
auf Bestellung 9120 Stücke:
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VS-20ETS08S-M3 vs-20ets08s.pdf
VS-20ETS08S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO263AB
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
auf Bestellung 5961 Stücke:
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AnzahlPrivatkunde
6+3.97 EUR
50+3.19 EUR
100+2.63 EUR
500+2.23 EUR
1000+1.88 EUR
2000+1.78 EUR
5000+1.73 EUR
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MCL4151-TR mcl4151.pdf
MCL4151-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 75V 200MA MICROMELF
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Grade: Automotive
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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2500+0.11 EUR
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MCL4151-TR mcl4151.pdf
MCL4151-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 75V 200MA MICROMELF
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Grade: Automotive
Operating Temperature - Junction: 125°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 200mA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
auf Bestellung 3858 Stücke:
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AnzahlPrivatkunde
39+0.55 EUR
64+0.33 EUR
103+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
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3KASMC33AHE3_B/H 3kasmc.pdf
3KASMC33AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 56.3A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Power - Peak Pulse: 3000W (3kW)
Produkt ist nicht verfügbar
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3KASMC33AHE3_B/H 3kasmc.pdf
3KASMC33AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AB
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 56.3A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-30CTQ100S-M3 vs-30ctqs-m3-series.pdf
VS-30CTQ100S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
auf Bestellung 8898 Stücke:
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4+6.72 EUR
50+3.38 EUR
100+3.06 EUR
500+2.49 EUR
1000+2.31 EUR
2000+2.15 EUR
5000+2 EUR
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VS-30CTQ100STRL-M3 vs-30ctqs-m3-series.pdf
VS-30CTQ100STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.37 EUR
1600+2.21 EUR
2400+2.13 EUR
4000+2.03 EUR
5600+2.01 EUR
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VS-30CTQ100STRR-M3 vs-30ctqs-m3-series.pdf
VS-30CTQ100STRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Produkt ist nicht verfügbar
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GP30M-E3/54 GP30x.pdf
GP30M-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GP30M-E3/54 GP30x.pdf
GP30M-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
auf Bestellung 241 Stücke:
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8+2.98 EUR
11+1.92 EUR
100+1.4 EUR
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GP30M-E3/73 GP30x.pdf
GP30M-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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GP30M-E3/73 GP30x.pdf
GP30M-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 3A DO201AD
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Produkt ist nicht verfügbar
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BZG03C270-M3-08 bzg03c-m-series.pdf
BZG03C270-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 270V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 1000 Ohms
Voltage - Zener (Nom) (Vz): 270 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±7.04%
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.39 EUR
3000+0.36 EUR
4500+0.27 EUR
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BZG03C270-M3-08 bzg03c-m-series.pdf
BZG03C270-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 270V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 1000 Ohms
Voltage - Zener (Nom) (Vz): 270 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±7.04%
Packaging: Cut Tape (CT)
auf Bestellung 12013 Stücke:
Lieferzeit 10-14 Tag (e)
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21+1.02 EUR
27+0.77 EUR
100+0.54 EUR
500+0.42 EUR
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BZG03C20-HM3-08 bzg03c-m-series.pdf
BZG03C20-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 1.25W DO214AC
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Produkt ist nicht verfügbar
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BZG03C20-HM3-08 bzg03c-m-series.pdf
BZG03C20-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 1.25W DO214AC
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
Qualification: AEC-Q101
auf Bestellung 1384 Stücke:
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29+0.74 EUR
100+0.5 EUR
500+0.39 EUR
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BZG03C270-HM3-08 bzg03c-m-series.pdf
BZG03C270-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 270V 1.25W DO214AC
Tolerance: ±7.04%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 270 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
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1500+0.4 EUR
3000+0.37 EUR
4500+0.36 EUR
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BZG03C270-HM3-08 bzg03c-m-series.pdf
BZG03C270-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 270V 1.25W DO214AC
Tolerance: ±7.04%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 270 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 9141 Stücke:
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29+0.74 EUR
38+0.56 EUR
100+0.43 EUR
500+0.4 EUR
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BZG03C22-HM3-08 bzg03c-m-series.pdf
BZG03C22-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 1.25W DO214AC
Tolerance: ±5.68%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
auf Bestellung 1500 Stücke:
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1500+0.4 EUR
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BZG03C22-HM3-08 bzg03c-m-series.pdf
BZG03C22-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 1.25W DO214AC
Tolerance: ±5.68%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
auf Bestellung 2748 Stücke:
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20+1.05 EUR
24+0.89 EUR
100+0.67 EUR
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BZG03C220-HM3-08 bzg03c-m-series.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 220V 1.25W DO214AC
Tolerance: ±5.68%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 220 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 160 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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1500+0.6 EUR
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BZG03C220-HM3-08 bzg03c-m-series.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 220V 1.25W DO214AC
Tolerance: ±5.68%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 220 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 160 V
Qualification: AEC-Q101
auf Bestellung 3635 Stücke:
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10+2.18 EUR
16+1.36 EUR
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BAS34-TAP bas33.pdf
BAS34-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 60V 200MA DO35
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 1 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
auf Bestellung 70000 Stücke:
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10000+0.089 EUR
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50000+0.073 EUR
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BAS34-TAP bas33.pdf
BAS34-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 60V 200MA DO35
Current - Reverse Leakage @ Vr: 1 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 17123 Stücke:
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33+0.65 EUR
47+0.44 EUR
100+0.21 EUR
500+0.18 EUR
1000+0.13 EUR
2000+0.11 EUR
5000+0.1 EUR
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BAV19-TR bav17.pdf
BAV19-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 100V 250MA DO204AH
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.064 EUR
20000+0.058 EUR
Mindestbestellmenge: 10000 Stücke
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