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BZT03C33-TAP BZT03C33-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 27VWM 46.2VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.06%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 24 V
Produkt ist nicht verfügbar
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BZT03C43-TAP BZT03C43-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 36VWM 60.7VC SOD57
Tolerance: ±6.98%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Produkt ist nicht verfügbar
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BZT03C43-TAP BZT03C43-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 36VWM 60.7VC SOD57
Tolerance: ±6.98%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
auf Bestellung 2093 Stücke:
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16+1.13 EUR
18+0.99 EUR
100+0.76 EUR
500+0.6 EUR
1000+0.48 EUR
2000+0.46 EUR
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BZT03C39-TAP BZT03C39-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 33VWM 54.1VC SOD57
Tolerance: ±5.13%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
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BZT03C39-TAP BZT03C39-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 33VWM 54.1VC SOD57
Tolerance: ±5.13%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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BZT03C30-TAP BZT03C30-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 24VWM 42.2VC SOD57
Tolerance: ±6.67%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
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BZT03C30-TAP BZT03C30-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 24VWM 42.2VC SOD57
Tolerance: ±6.67%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
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VS-50WQ04FNHM3 VS-50WQ04FNHM3 Vishay General Semiconductor - Diodes Division tf-vs-50wq04fnhm3.pdf Description: DIODE SCHOTTKY 40V 5.5A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 405pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Qualification: AEC-Q101
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1.5KE47A-E3/73 1.5KE47A-E3/73 Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 40.2VWM 64.8VC 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1.5KE47AHE3_A/D 1.5KE47AHE3_A/D Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 40.2VWM 64.8VC 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE47AHE3_A/C 1.5KE47AHE3_A/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 40.2VWM 64.8VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BU1510-E3/45 BU1510-E3/45 Vishay General Semiconductor - Diodes Division bu1506.pdf Description: BRIDGE RECT 1PHASE 1KV 3.4A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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SM8S40AHE3_A/I SM8S40AHE3_A/I Vishay General Semiconductor - Diodes Division sm8s.pdf Description: TVS DIODE 40VWM 64.5VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 102A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM8S40AHE3_A/I SM8S40AHE3_A/I Vishay General Semiconductor - Diodes Division sm8s.pdf Description: TVS DIODE 40VWM 64.5VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 102A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SS5P4-M3/86A SS5P4-M3/86A Vishay General Semiconductor - Diodes Division ss5p4.pdf Description: DIODE SCHOTTKY 40V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
auf Bestellung 91500 Stücke:
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SS5P4-M3/86A SS5P4-M3/86A Vishay General Semiconductor - Diodes Division ss5p4.pdf Description: DIODE SCHOTTKY 40V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
auf Bestellung 92033 Stücke:
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P6SMB22AHE3_A/H P6SMB22AHE3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 18.8VWM 30.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 19.6A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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P6SMB22AHM3_A/H P6SMB22AHM3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 18.8VWM 30.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 19.6A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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BZT55C5V1-GS18 BZT55C5V1-GS18 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 5.1V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
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BZT55C5V1-GS18 BZT55C5V1-GS18 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 5.1V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
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2000+0.056 EUR
5000+0.054 EUR
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GLL4754A-E3/96 GLL4754A-E3/96 Vishay General Semiconductor - Diodes Division gll4735.pdf Description: DIODE ZENER 39V 1W MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 29.7 V
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GLL4754A-E3/96 GLL4754A-E3/96 Vishay General Semiconductor - Diodes Division gll4735.pdf Description: DIODE ZENER 39V 1W MELF
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 29.7 V
Produkt ist nicht verfügbar
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1.5KE7.5AHE3/51 1.5KE7.5AHE3/51 Vishay General Semiconductor - Diodes Division 1.5KE6.8A%20_-_1.5KE540A%2C1N6267A-1N6303A_Rev10-11-16.pdf Description: TVS DIODE 6.4VWM 11.3VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 133A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10D60CHM3_A/I V10D60CHM3_A/I Vishay General Semiconductor - Diodes Division v10d60c.pdf Description: DIODE ARR SCHOTT 60V 5A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10D60CHM3_A/I V10D60CHM3_A/I Vishay General Semiconductor - Diodes Division v10d60c.pdf Description: DIODE ARR SCHOTT 60V 5A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 1900 Stücke:
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9+1.97 EUR
11+1.62 EUR
100+1.26 EUR
500+1.07 EUR
1000+0.87 EUR
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S3BHE3_A/H S3BHE3_A/H Vishay General Semiconductor - Diodes Division s3a.pdf Description: DIODE GEN PURP 100V 3A DO214AB
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CS3G-E3/I CS3G-E3/I Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 400V 2A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.8 µs
Technology: Standard
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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CS3G-E3/I CS3G-E3/I Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 400V 2A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.8 µs
Technology: Standard
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SM8S36ATHE3/I SM8S36ATHE3/I Vishay General Semiconductor - Diodes Division sm8s10atthrusm8s43at.pdf Description: TVS DIODE 36VWM 58.1VC DO218AC
Packaging: Tape & Reel (TR)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 114A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SM8S36ATHE3/I SM8S36ATHE3/I Vishay General Semiconductor - Diodes Division sm8s10atthrusm8s43at.pdf Description: TVS DIODE 36VWM 58.1VC DO218AC
Packaging: Cut Tape (CT)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 114A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMBJ17AHE3_A/I SMBJ17AHE3_A/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 17VWM 27.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ17AHE3_A/H SMBJ17AHE3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 17VWM 27.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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RGP10D-5303M3/73 Vishay General Semiconductor - Diodes Division RGP10x_-M3.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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RGP10D-5310E3/73 Vishay General Semiconductor - Diodes Division RGP10x_-M3.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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RGP10D-5310M3/73 Vishay General Semiconductor - Diodes Division RGP10x_-M3.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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RGP10D-5020M3/54 Vishay General Semiconductor - Diodes Division RGP10x_-M3.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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RGP10DE-031E3/93 Vishay General Semiconductor - Diodes Division Description: RECTIFIER
Packaging: Bulk
Part Status: Obsolete
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RGP10DE-052E3/91 Vishay General Semiconductor - Diodes Division Description: RECTIFIER
Packaging: Bulk
Part Status: Obsolete
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MMSZ4691-E3-08 MMSZ4691-E3-08 Vishay General Semiconductor - Diodes Division mmsz4681_to_mmsz4717.pdf Description: DIODE ZENER 6.2V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
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MMSZ4691-E3-08 MMSZ4691-E3-08 Vishay General Semiconductor - Diodes Division mmsz4681_to_mmsz4717.pdf Description: DIODE ZENER 6.2V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
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BZD27C47P-HE3-08 BZD27C47P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 47V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Qualification: AEC-Q101
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BZD27C47P-HE3-08 BZD27C47P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 47V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Qualification: AEC-Q101
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V35PW15HM3/I V35PW15HM3/I Vishay General Semiconductor - Diodes Division v35pw15.pdf Description: DIODE SCHOTTKY 150V 35A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1620pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 35 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
Qualification: AEC-Q101
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V35PW15HM3/I V35PW15HM3/I Vishay General Semiconductor - Diodes Division v35pw15.pdf Description: DIODE SCHOTTKY 150V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1620pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 35 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 955 Stücke:
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V20PW15-M3/I V20PW15-M3/I Vishay General Semiconductor - Diodes Division v20pw15.pdf Description: DIODE SCHOTTKY 150V 20A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 950pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
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V20PW15-M3/I V20PW15-M3/I Vishay General Semiconductor - Diodes Division v20pw15.pdf Description: DIODE SCHOTTKY 150V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 950pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
auf Bestellung 623 Stücke:
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SM8S24AHE3_A/I SM8S24AHE3_A/I Vishay General Semiconductor - Diodes Division sm8s.pdf Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 170A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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750+3.1 EUR
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SM8S24AHE3_A/I SM8S24AHE3_A/I Vishay General Semiconductor - Diodes Division sm8s.pdf Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 170A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMAJ120CAHE3_A/H SMAJ120CAHE3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 120VWM 193VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ120CAHE3_A/I SMAJ120CAHE3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 120VWM 193VC DO214AC
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SMAJ120CAHM3_A/H SMAJ120CAHM3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 120VWM 193VC DO214AC
Produkt ist nicht verfügbar
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SMAJ120CAHM3_A/I SMAJ120CAHM3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 120VWM 193VC DO214AC
Produkt ist nicht verfügbar
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SMAJ120CAHM3/H SMAJ120CAHM3/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 120VWM 193VC DO214AC
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SMAJ120CAHM3/I SMAJ120CAHM3/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 120VWM 193VC DO214AC
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PLZ2V0B-G3/H PLZ2V0B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 2.11V 960MW DO219AC
Tolerance: ±4.27%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.11 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 500 mV
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
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PLZ2V0B-G3/H PLZ2V0B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 2.11V 960MW DO219AC
Tolerance: ±4.27%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.11 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 500 mV
Qualification: AEC-Q101
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2000+0.076 EUR
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SM6T27CAHE3_A/I SM6T27CAHE3_A/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 23.1VWM 37.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T27CAHM3_A/I SM6T27CAHM3_A/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 23.1VWM 37.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT55C5V6-GS18 BZT55C5V6-GS18 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 5.6V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT55C5V6-GS18 BZT55C5V6-GS18 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 5.6V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
auf Bestellung 6750 Stücke:
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53+0.33 EUR
76+0.23 EUR
156+0.11 EUR
500+0.094 EUR
1000+0.065 EUR
2000+0.057 EUR
5000+0.053 EUR
Mindestbestellmenge: 53
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BZT03C33-TAP bzt03.pdf
BZT03C33-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 27VWM 46.2VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.06%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 24 V
Produkt ist nicht verfügbar
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BZT03C43-TAP bzt03.pdf
BZT03C43-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 60.7VC SOD57
Tolerance: ±6.98%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Produkt ist nicht verfügbar
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BZT03C43-TAP bzt03.pdf
BZT03C43-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 60.7VC SOD57
Tolerance: ±6.98%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
auf Bestellung 2093 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
18+0.99 EUR
100+0.76 EUR
500+0.6 EUR
1000+0.48 EUR
2000+0.46 EUR
Mindestbestellmenge: 16
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BZT03C39-TAP bzt03.pdf
BZT03C39-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 54.1VC SOD57
Tolerance: ±5.13%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
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BZT03C39-TAP bzt03.pdf
BZT03C39-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 54.1VC SOD57
Tolerance: ±5.13%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 449 Stücke:
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Anzahl Preis
15+1.23 EUR
22+0.83 EUR
100+0.57 EUR
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BZT03C30-TAP bzt03.pdf
BZT03C30-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 42.2VC SOD57
Tolerance: ±6.67%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
auf Bestellung 5000 Stücke:
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Anzahl Preis
5000+0.36 EUR
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BZT03C30-TAP bzt03.pdf
BZT03C30-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 42.2VC SOD57
Tolerance: ±6.67%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
auf Bestellung 1540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.02 EUR
21+0.87 EUR
100+0.61 EUR
500+0.51 EUR
1000+0.43 EUR
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VS-50WQ04FNHM3 tf-vs-50wq04fnhm3.pdf
VS-50WQ04FNHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5.5A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 405pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Qualification: AEC-Q101
auf Bestellung 1817 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.29 EUR
75+1.16 EUR
150+1.15 EUR
Mindestbestellmenge: 6
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1.5KE47A-E3/73 15ke.pdf
1.5KE47A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40.2VWM 64.8VC 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1.5KE47AHE3_A/D 15ke.pdf
1.5KE47AHE3_A/D
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40.2VWM 64.8VC 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE47AHE3_A/C 15ke.pdf
1.5KE47AHE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40.2VWM 64.8VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BU1510-E3/45 bu1506.pdf
BU1510-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3.4A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 85 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.56 EUR
10+3.13 EUR
Mindestbestellmenge: 4
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SM8S40AHE3_A/I sm8s.pdf
SM8S40AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40VWM 64.5VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 102A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+3.9 EUR
1500+3.34 EUR
2250+3.14 EUR
Mindestbestellmenge: 750
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SM8S40AHE3_A/I sm8s.pdf
SM8S40AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40VWM 64.5VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 102A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4257 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.44 EUR
10+5.42 EUR
100+4.39 EUR
Mindestbestellmenge: 3
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SS5P4-M3/86A ss5p4.pdf
SS5P4-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
auf Bestellung 91500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.35 EUR
3000+0.33 EUR
7500+0.32 EUR
10500+0.3 EUR
15000+0.29 EUR
37500+0.28 EUR
Mindestbestellmenge: 1500
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SS5P4-M3/86A ss5p4.pdf
SS5P4-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
auf Bestellung 92033 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
21+0.85 EUR
100+0.59 EUR
500+0.46 EUR
Mindestbestellmenge: 16
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P6SMB22AHE3_A/H p6smb.pdf
P6SMB22AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 19.6A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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P6SMB22AHM3_A/H p6smb.pdf
P6SMB22AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 19.6A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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BZT55C5V1-GS18 bzt55.pdf
BZT55C5V1-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.041 EUR
Mindestbestellmenge: 10000
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BZT55C5V1-GS18 bzt55.pdf
BZT55C5V1-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
118+0.15 EUR
259+0.068 EUR
500+0.063 EUR
1000+0.058 EUR
2000+0.056 EUR
5000+0.054 EUR
Mindestbestellmenge: 77
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GLL4754A-E3/96 gll4735.pdf
GLL4754A-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 1W MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 29.7 V
Produkt ist nicht verfügbar
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GLL4754A-E3/96 gll4735.pdf
GLL4754A-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 1W MELF
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 29.7 V
Produkt ist nicht verfügbar
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1.5KE7.5AHE3/51 1.5KE6.8A%20_-_1.5KE540A%2C1N6267A-1N6303A_Rev10-11-16.pdf
1.5KE7.5AHE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.4VWM 11.3VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 133A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10D60CHM3_A/I v10d60c.pdf
V10D60CHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 5A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10D60CHM3_A/I v10d60c.pdf
V10D60CHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 5A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
11+1.62 EUR
100+1.26 EUR
500+1.07 EUR
1000+0.87 EUR
Mindestbestellmenge: 9
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S3BHE3_A/H s3a.pdf
S3BHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO214AB
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
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CS3G-E3/I
CS3G-E3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 2A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.8 µs
Technology: Standard
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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CS3G-E3/I
CS3G-E3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 2A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.8 µs
Technology: Standard
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SM8S36ATHE3/I sm8s10atthrusm8s43at.pdf
SM8S36ATHE3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO218AC
Packaging: Tape & Reel (TR)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 114A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+2.96 EUR
1500+2.53 EUR
Mindestbestellmenge: 750
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SM8S36ATHE3/I sm8s10atthrusm8s43at.pdf
SM8S36ATHE3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO218AC
Packaging: Cut Tape (CT)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 114A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.89 EUR
10+4.11 EUR
100+3.33 EUR
Mindestbestellmenge: 4
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SMBJ17AHE3_A/I smbj.pdf
SMBJ17AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17VWM 27.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ17AHE3_A/H smbj.pdf
SMBJ17AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17VWM 27.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RGP10D-5303M3/73 RGP10x_-M3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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RGP10D-5310E3/73 RGP10x_-M3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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RGP10D-5310M3/73 RGP10x_-M3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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RGP10D-5020M3/54 RGP10x_-M3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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RGP10DE-031E3/93
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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RGP10DE-052E3/91
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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MMSZ4691-E3-08 mmsz4681_to_mmsz4717.pdf
MMSZ4691-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.077 EUR
6000+0.069 EUR
9000+0.065 EUR
15000+0.042 EUR
Mindestbestellmenge: 3000
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MMSZ4691-E3-08 mmsz4681_to_mmsz4717.pdf
MMSZ4691-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
auf Bestellung 26113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
150+0.12 EUR
269+0.066 EUR
500+0.062 EUR
1000+0.059 EUR
Mindestbestellmenge: 91
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BZD27C47P-HE3-08 bzd27series.pdf
BZD27C47P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.23 EUR
6000+0.21 EUR
9000+0.2 EUR
Mindestbestellmenge: 3000
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BZD27C47P-HE3-08 bzd27series.pdf
BZD27C47P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Qualification: AEC-Q101
auf Bestellung 28871 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
31+0.57 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.25 EUR
Mindestbestellmenge: 27
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V35PW15HM3/I v35pw15.pdf
V35PW15HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 35A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1620pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 35 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V35PW15HM3/I v35pw15.pdf
V35PW15HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1620pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 35 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.6 EUR
10+1.8 EUR
100+1.37 EUR
500+1.09 EUR
Mindestbestellmenge: 7
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V20PW15-M3/I v20pw15.pdf
V20PW15-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 20A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 950pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
Produkt ist nicht verfügbar
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V20PW15-M3/I v20pw15.pdf
V20PW15-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 950pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
auf Bestellung 623 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
14+1.27 EUR
100+0.88 EUR
500+0.71 EUR
Mindestbestellmenge: 10
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SM8S24AHE3_A/I sm8s.pdf
SM8S24AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 170A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+3.1 EUR
Mindestbestellmenge: 750
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SM8S24AHE3_A/I sm8s.pdf
SM8S24AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 170A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2153 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.53 EUR
10+4.47 EUR
100+3.5 EUR
Mindestbestellmenge: 4
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SMAJ120CAHE3_A/H smaj50a.pdf
SMAJ120CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 120VWM 193VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ120CAHE3_A/I smaj50a.pdf
SMAJ120CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 120VWM 193VC DO214AC
Produkt ist nicht verfügbar
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SMAJ120CAHM3_A/H smaj50a.pdf
SMAJ120CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 120VWM 193VC DO214AC
Produkt ist nicht verfügbar
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SMAJ120CAHM3_A/I smaj50a.pdf
SMAJ120CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 120VWM 193VC DO214AC
Produkt ist nicht verfügbar
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SMAJ120CAHM3/H smaj50a.pdf
SMAJ120CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 120VWM 193VC DO214AC
Produkt ist nicht verfügbar
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SMAJ120CAHM3/I smaj50a.pdf
SMAJ120CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 120VWM 193VC DO214AC
Produkt ist nicht verfügbar
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PLZ2V0B-G3/H plzseries.pdf
PLZ2V0B-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.11V 960MW DO219AC
Tolerance: ±4.27%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.11 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 500 mV
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.076 EUR
9000+0.059 EUR
Mindestbestellmenge: 4500
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PLZ2V0B-G3/H plzseries.pdf
PLZ2V0B-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.11V 960MW DO219AC
Tolerance: ±4.27%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.11 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 500 mV
Qualification: AEC-Q101
auf Bestellung 24303 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
57+0.31 EUR
117+0.15 EUR
500+0.13 EUR
1000+0.088 EUR
2000+0.076 EUR
Mindestbestellmenge: 39
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SM6T27CAHE3_A/I sm6t.pdf
SM6T27CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T27CAHM3_A/I sm6t.pdf
SM6T27CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT55C5V6-GS18 bzt55.pdf
BZT55C5V6-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT55C5V6-GS18 bzt55.pdf
BZT55C5V6-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
auf Bestellung 6750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
76+0.23 EUR
156+0.11 EUR
500+0.094 EUR
1000+0.065 EUR
2000+0.057 EUR
5000+0.053 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
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