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1N6385HE3_A/C 1N6385HE3_A/C Vishay General Semiconductor - Diodes Division icte.pdf Description: TVS DIODE 15VWM 21.4VC 1.5KE
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1N6385HE3/51 1N6385HE3/51 Vishay General Semiconductor - Diodes Division ICTE5-18C,_1N6373-86_Sep.22.16.pdf Description: TVS DIODE 15VWM 21.4VC 1.5KE
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BZD27B6V2P-M3-08 BZD27B6V2P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 6.2V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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BZD27B6V2P-M3-08 BZD27B6V2P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 6.2V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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BZD27C36P-HE3-08 BZD27C36P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 36V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Qualification: AEC-Q101
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BZD27C36P-HE3-08 BZD27C36P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 36V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Qualification: AEC-Q101
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VS-6TQ045S-M3 VS-6TQ045S-M3 Vishay General Semiconductor - Diodes Division vs-6tqs-m3.pdf Description: DIODE SCHOTTKY 45V 6A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
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VS-90APS08L-M3 Vishay General Semiconductor - Diodes Division vs-90epsl-m3.pdf Description: RECTIFIER DIODE 90A 800V TO-247A
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SMF33A-HE3-08 SMF33A-HE3-08 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 33VWM 53.3VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 198pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMF33A-HE3-08 SMF33A-HE3-08 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 33VWM 53.3VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 198pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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BZX84B3V0-E3-08 BZX84B3V0-E3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 3V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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BZX84B3V0-E3-08 BZX84B3V0-E3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 3V 300MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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TZMC47-GS18 TZMC47-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 47V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Qualification: AEC-Q101
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TZMC47-GS18 TZMC47-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 47V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Qualification: AEC-Q101
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ZMY56-GS08 ZMY56-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 56V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 42 V
Qualification: AEC-Q101
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ZMY56-GS08 ZMY56-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 56V 1W DO213AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 42 V
Qualification: AEC-Q101
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5KP13A-E3/54 5KP13A-E3/54 Vishay General Semiconductor - Diodes Division 5kp8_5a.pdf Description: TVS DIODE 13VWM 21.5VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 233A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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5KP13A-E3/54 5KP13A-E3/54 Vishay General Semiconductor - Diodes Division 5kp8_5a.pdf Description: TVS DIODE 13VWM 21.5VC P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 233A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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VS-E4PU6006L-N3 VS-E4PU6006L-N3 Vishay General Semiconductor - Diodes Division vs-e4pu6006l-n3.pdf Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 74 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 538 Stücke:
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VS-E4PU6006LHN3 VS-E4PU6006LHN3 Vishay General Semiconductor - Diodes Division vs-e4pu6006lhn3.pdf Description: DIODE GEN PURP 600V 60A TO247AD
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EGP31B-E3/C Vishay General Semiconductor - Diodes Division egp31abcdfg.pdf Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 117pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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SS2H10HE3_A/H SS2H10HE3_A/H Vishay General Semiconductor - Diodes Division ss2h9.pdf Description: DIODE SCHOTTKY 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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SS2H10HE3_A/H SS2H10HE3_A/H Vishay General Semiconductor - Diodes Division ss2h9.pdf Description: DIODE SCHOTTKY 100V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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SS3H10HE3_B/H SS3H10HE3_B/H Vishay General Semiconductor - Diodes Division ss3h9.pdf Description: DIODE SCHOTTKY 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Qualification: AEC-Q101
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SS3H10HE3_B/H SS3H10HE3_B/H Vishay General Semiconductor - Diodes Division ss3h9.pdf Description: DIODE SCHOTTKY 100V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Qualification: AEC-Q101
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ZPY5V1-TAP ZPY5V1-TAP Vishay General Semiconductor - Diodes Division zpy3v9.pdf Description: DIODE ZENER 5.1V 1.3W DO41
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VS-8TQ080S-M3 VS-8TQ080S-M3 Vishay General Semiconductor - Diodes Division vs-8tqs-m3.pdf Description: DIODE SCHOTTKY 80V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
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VS-8TQ080STRL-M3 VS-8TQ080STRL-M3 Vishay General Semiconductor - Diodes Division vs-8tqs-m3.pdf Description: DIODE SCHOTTKY 80V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
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VS-8TQ080STRR-M3 VS-8TQ080STRR-M3 Vishay General Semiconductor - Diodes Division vs-8tqs-m3.pdf Description: DIODE SCHOTTKY 80V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
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MSE1PJHM3J/89A MSE1PJHM3J/89A Vishay General Semiconductor - Diodes Division mse1pj.pdf Description: DIODE GEN PURP 600V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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MSE1PJHM3J/89A MSE1PJHM3J/89A Vishay General Semiconductor - Diodes Division mse1pj.pdf Description: DIODE GEN PURP 600V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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BZD27B12P-M3-08 BZD27B12P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 12V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
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BZD27B12P-M3-08 BZD27B12P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 12V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
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BAS16L-G3-08 BAS16L-G3-08 Vishay General Semiconductor - Diodes Division bas16l.pdf Description: DIODE STD 100V 250MA DFN10062A
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DFN1006-2A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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BAS16L-G3-08 BAS16L-G3-08 Vishay General Semiconductor - Diodes Division bas16l.pdf Description: DIODE STD 100V 250MA DFN10062A
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DFN1006-2A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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BAS16L-HG3-08 BAS16L-HG3-08 Vishay General Semiconductor - Diodes Division bas16l.pdf Description: DIODE STD 100V 250MA DFN10062A
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DFN1006-2A
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
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BAS16L-HG3-08 BAS16L-HG3-08 Vishay General Semiconductor - Diodes Division bas16l.pdf Description: DIODE STD 100V 250MA DFN10062A
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DFN1006-2A
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
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GP15D-E3/54 GP15D-E3/54 Vishay General Semiconductor - Diodes Division gp15a.pdf Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5 µs
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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GP15D-E3/54 GP15D-E3/54 Vishay General Semiconductor - Diodes Division gp15a.pdf Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5 µs
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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18+0.99 EUR
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SMC5K22A-M3/I SMC5K22A-M3/I Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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SMC5K22A-M3/I SMC5K22A-M3/I Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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SMC5K26A-M3/I SMC5K26A-M3/I Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
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7000+0.57 EUR
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SMCJ22AHE3_A/H SMCJ22AHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 42.3A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ22AHE3_A/I SMCJ22AHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 42.3A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-90EPS16L-M3 VS-90EPS16L-M3 Vishay General Semiconductor - Diodes Division vs-90eps16l-m3.pdf Description: RECTIFIER DIODE 90A 1600V TO-247
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V2PM15-M3/H V2PM15-M3/H Vishay General Semiconductor - Diodes Division v2pm15.pdf Description: DIODE SCHOTTKY 150V 2A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
auf Bestellung 45000 Stücke:
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4500+0.093 EUR
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V2PM15-M3/H V2PM15-M3/H Vishay General Semiconductor - Diodes Division v2pm15.pdf Description: DIODE SCHOTTKY 150V 2A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
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V2PL45-M3/H V2PL45-M3/H Vishay General Semiconductor - Diodes Division v2pl45.pdf Description: DIODE SCHOTTKY 45V 2A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 2 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
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V2PL45-M3/H V2PL45-M3/H Vishay General Semiconductor - Diodes Division v2pl45.pdf Description: DIODE SCHOTTKY 45V 2A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 2 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
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BZX384B6V2-E3-08 BZX384B6V2-E3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 6.2V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
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BZX384B6V2-E3-08 BZX384B6V2-E3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 6.2V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
auf Bestellung 11799 Stücke:
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BZX384B6V2-HE3-08 BZX384B6V2-HE3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 6.2V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
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BZX384B6V2-HE3-08 BZX384B6V2-HE3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 6.2V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
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500+0.043 EUR
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P6SMB36CAHE3_A/I P6SMB36CAHE3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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P6SMB36CAHM3_A/I P6SMB36CAHM3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB36CAHE3/5B P6SMB36CAHE3/5B Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB36CAHE3/5B P6SMB36CAHE3/5B Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB36CAHE3/52 P6SMB36CAHE3/52 Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB36CAHE3/52 P6SMB36CAHE3/52 Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB36CAHM3/H P6SMB36CAHM3/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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1N6385HE3_A/C icte.pdf
1N6385HE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 21.4VC 1.5KE
Produkt ist nicht verfügbar
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1N6385HE3/51 ICTE5-18C,_1N6373-86_Sep.22.16.pdf
1N6385HE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 21.4VC 1.5KE
Produkt ist nicht verfügbar
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BZD27B6V2P-M3-08 bzd27b-mseries.pdf
BZD27B6V2P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.15 EUR
15000+0.14 EUR
21000+0.12 EUR
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BZD27B6V2P-M3-08 bzd27b-mseries.pdf
BZD27B6V2P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
auf Bestellung 24336 Stücke:
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Anzahl Preis
32+0.56 EUR
47+0.38 EUR
100+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
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BZD27C36P-HE3-08 bzd27series.pdf
BZD27C36P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Qualification: AEC-Q101
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.23 EUR
6000+0.21 EUR
9000+0.2 EUR
30000+0.19 EUR
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BZD27C36P-HE3-08 bzd27series.pdf
BZD27C36P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Qualification: AEC-Q101
auf Bestellung 39610 Stücke:
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Anzahl Preis
27+0.67 EUR
31+0.57 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.25 EUR
Mindestbestellmenge: 27
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VS-6TQ045S-M3 vs-6tqs-m3.pdf
VS-6TQ045S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
auf Bestellung 4445 Stücke:
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Anzahl Preis
10+1.83 EUR
50+1.47 EUR
100+1.17 EUR
500+0.99 EUR
1000+0.81 EUR
2000+0.76 EUR
Mindestbestellmenge: 10
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VS-90APS08L-M3 vs-90epsl-m3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER DIODE 90A 800V TO-247A
Produkt ist nicht verfügbar
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SMF33A-HE3-08 smf5v0atosmf58a.pdf
SMF33A-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 198pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
9000+0.15 EUR
15000+0.14 EUR
21000+0.13 EUR
Mindestbestellmenge: 3000
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SMF33A-HE3-08 smf5v0atosmf58a.pdf
SMF33A-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 198pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 28517 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
46+0.38 EUR
100+0.18 EUR
500+0.17 EUR
Mindestbestellmenge: 32
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BZX84B3V0-E3-08 bzx84_series.pdf
BZX84B3V0-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.077 EUR
6000+0.067 EUR
Mindestbestellmenge: 3000
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BZX84B3V0-E3-08 bzx84_series.pdf
BZX84B3V0-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 300MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 14241 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
51+0.35 EUR
100+0.19 EUR
500+0.12 EUR
1000+0.083 EUR
Mindestbestellmenge: 42
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TZMC47-GS18 tzm.pdf
TZMC47-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TZMC47-GS18 tzm.pdf
TZMC47-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Qualification: AEC-Q101
auf Bestellung 2431 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
87+0.2 EUR
139+0.13 EUR
500+0.093 EUR
1000+0.081 EUR
2000+0.072 EUR
Mindestbestellmenge: 53
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ZMY56-GS08 zmy3v9.pdf
ZMY56-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 42 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.2 EUR
3000+0.18 EUR
7500+0.17 EUR
10500+0.15 EUR
Mindestbestellmenge: 1500
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ZMY56-GS08 zmy3v9.pdf
ZMY56-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 1W DO213AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 42 V
Qualification: AEC-Q101
auf Bestellung 12418 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
35+0.52 EUR
100+0.31 EUR
500+0.29 EUR
Mindestbestellmenge: 28
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5KP13A-E3/54 5kp8_5a.pdf
5KP13A-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.5VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 233A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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5KP13A-E3/54 5kp8_5a.pdf
5KP13A-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.5VC P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 233A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
auf Bestellung 134 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.07 EUR
10+2.96 EUR
100+2.14 EUR
Mindestbestellmenge: 5
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VS-E4PU6006L-N3 vs-e4pu6006l-n3.pdf
VS-E4PU6006L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 74 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 538 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
25+2.48 EUR
100+2.05 EUR
500+1.7 EUR
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VS-E4PU6006LHN3 vs-e4pu6006lhn3.pdf
VS-E4PU6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AD
Produkt ist nicht verfügbar
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EGP31B-E3/C egp31abcdfg.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 117pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
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SS2H10HE3_A/H ss2h9.pdf
SS2H10HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 57750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+0.35 EUR
1500+0.28 EUR
2250+0.25 EUR
5250+0.24 EUR
18750+0.22 EUR
Mindestbestellmenge: 750
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SS2H10HE3_A/H ss2h9.pdf
SS2H10HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 58538 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
28+0.64 EUR
100+0.45 EUR
Mindestbestellmenge: 24
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SS3H10HE3_B/H ss3h9.pdf
SS3H10HE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 3400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
850+0.44 EUR
1700+0.41 EUR
2550+0.39 EUR
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SS3H10HE3_B/H ss3h9.pdf
SS3H10HE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 4908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
21+0.87 EUR
100+0.6 EUR
Mindestbestellmenge: 14
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ZPY5V1-TAP zpy3v9.pdf
ZPY5V1-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 1.3W DO41
auf Bestellung 20000 Stücke:
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VS-8TQ080S-M3 vs-8tqs-m3.pdf
VS-8TQ080S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
auf Bestellung 161 Stücke:
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Anzahl Preis
7+2.64 EUR
50+1.39 EUR
100+1.26 EUR
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VS-8TQ080STRL-M3 vs-8tqs-m3.pdf
VS-8TQ080STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Produkt ist nicht verfügbar
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VS-8TQ080STRR-M3 vs-8tqs-m3.pdf
VS-8TQ080STRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Produkt ist nicht verfügbar
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MSE1PJHM3J/89A mse1pj.pdf
MSE1PJHM3J/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.84 EUR
9000+0.76 EUR
Mindestbestellmenge: 4500
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MSE1PJHM3J/89A mse1pj.pdf
MSE1PJHM3J/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 26335 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
11+1.66 EUR
100+1.29 EUR
500+1.1 EUR
1000+0.89 EUR
2000+0.84 EUR
Mindestbestellmenge: 9
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BZD27B12P-M3-08 bzd27b-mseries.pdf
BZD27B12P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.15 EUR
15000+0.14 EUR
21000+0.13 EUR
Mindestbestellmenge: 3000
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BZD27B12P-M3-08 bzd27b-mseries.pdf
BZD27B12P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
auf Bestellung 29296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
47+0.38 EUR
100+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 32
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BAS16L-G3-08 bas16l.pdf
BAS16L-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 100V 250MA DFN10062A
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DFN1006-2A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.052 EUR
20000+0.05 EUR
Mindestbestellmenge: 10000
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BAS16L-G3-08 bas16l.pdf
BAS16L-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 100V 250MA DFN10062A
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DFN1006-2A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 23640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
110+0.16 EUR
129+0.14 EUR
500+0.1 EUR
1000+0.086 EUR
2000+0.08 EUR
5000+0.073 EUR
Mindestbestellmenge: 67
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BAS16L-HG3-08 bas16l.pdf
BAS16L-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 100V 250MA DFN10062A
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DFN1006-2A
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS16L-HG3-08 bas16l.pdf
BAS16L-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 100V 250MA DFN10062A
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DFN1006-2A
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 2301 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
92+0.19 EUR
123+0.14 EUR
500+0.11 EUR
1000+0.096 EUR
2000+0.09 EUR
Mindestbestellmenge: 63
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GP15D-E3/54 gp15a.pdf
GP15D-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5 µs
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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GP15D-E3/54 gp15a.pdf
GP15D-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5 µs
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 3486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
21+0.84 EUR
100+0.58 EUR
500+0.46 EUR
1000+0.37 EUR
2000+0.33 EUR
Mindestbestellmenge: 18
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SMC5K22A-M3/I smc5k10a.pdf
SMC5K22A-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMC5K22A-M3/I smc5k10a.pdf
SMC5K22A-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
auf Bestellung 637 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
15+1.18 EUR
100+0.92 EUR
500+0.78 EUR
Mindestbestellmenge: 13
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SMC5K26A-M3/I smc5k10a.pdf
SMC5K26A-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.6 EUR
7000+0.57 EUR
10500+0.54 EUR
Mindestbestellmenge: 3500
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SMCJ22AHE3_A/H smcj.pdf
SMCJ22AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 42.3A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ22AHE3_A/I smcj.pdf
SMCJ22AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 42.3A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-90EPS16L-M3 vs-90eps16l-m3.pdf
VS-90EPS16L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER DIODE 90A 1600V TO-247
auf Bestellung 877 Stücke:
Lieferzeit 10-14 Tag (e)
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V2PM15-M3/H v2pm15.pdf
V2PM15-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 2A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.093 EUR
9000+0.085 EUR
13500+0.081 EUR
22500+0.077 EUR
31500+0.074 EUR
45000+0.071 EUR
Mindestbestellmenge: 4500
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V2PM15-M3/H v2pm15.pdf
V2PM15-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 2A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
auf Bestellung 46634 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
55+0.33 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
Mindestbestellmenge: 34
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V2PL45-M3/H v2pl45.pdf
V2PL45-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 2A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 2 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Produkt ist nicht verfügbar
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V2PL45-M3/H v2pl45.pdf
V2PL45-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 2A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 2 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
auf Bestellung 7890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
41+0.43 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 29
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BZX384B6V2-E3-08 bzx384.pdf
BZX384B6V2-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.071 EUR
6000+0.064 EUR
9000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZX384B6V2-E3-08 bzx384.pdf
BZX384B6V2-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
auf Bestellung 11799 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
115+0.15 EUR
243+0.073 EUR
500+0.07 EUR
1000+0.068 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
BZX384B6V2-HE3-08 bzx384.pdf
BZX384B6V2-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.074 EUR
6000+0.066 EUR
9000+0.062 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZX384B6V2-HE3-08 bzx384.pdf
BZX384B6V2-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
auf Bestellung 15936 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
334+0.053 EUR
393+0.045 EUR
500+0.043 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB36CAHE3_A/I p6smb.pdf
P6SMB36CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB36CAHM3_A/I p6smb.pdf
P6SMB36CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB36CAHE3/5B p6smb.pdf
P6SMB36CAHE3/5B
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB36CAHE3/5B p6smb.pdf
P6SMB36CAHE3/5B
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB36CAHE3/52 p6smb.pdf
P6SMB36CAHE3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB36CAHE3/52 p6smb.pdf
P6SMB36CAHE3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB36CAHM3/H p6smb.pdf
P6SMB36CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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