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SMBJ130CAHM3/H SMBJ130CAHM3/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 130VWM 209VC DO214AA
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SMBJ130CAHE3_A/I SMBJ130CAHE3_A/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 130VWM 209VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ130CAHE3_A/H SMBJ130CAHE3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 130VWM 209VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 600W
Power Line Protection: No
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BYG24J-E3/TR BYG24J-E3/TR Vishay General Semiconductor - Diodes Division byg24d.pdf Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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BYG24J-E3/TR BYG24J-E3/TR Vishay General Semiconductor - Diodes Division byg24d.pdf Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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BYV16-TAP BYV16-TAP Vishay General Semiconductor - Diodes Division byv12.pdf Description: DIODE AVALANCHE 1KV 1.5A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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BYV16-TAP BYV16-TAP Vishay General Semiconductor - Diodes Division byv12.pdf Description: DIODE AVALANCHE 1KV 1.5A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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SMAJ28CAHM3/H SMAJ28CAHM3/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 28VWM 45.4VC DO214AC
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SMAJ28CAHM3/I SMAJ28CAHM3/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 28VWM 45.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ28CA61HM3J_A/H SMAJ28CA61HM3J_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 28VWM 45.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VS-CZH6106FP-M3 VS-CZH6106FP-M3 Vishay General Semiconductor - Diodes Division vs-czh6106fp-m3.pdf Description: DIODE ARRAY GP 600V 30A TO-3PF
Packaging: Tube
Package / Case: SC-94
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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BZD27B8V2P-M3-08 BZD27B8V2P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 8.2V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
auf Bestellung 27000 Stücke:
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BZD27B8V2P-M3-08 BZD27B8V2P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 8.2V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
auf Bestellung 29861 Stücke:
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VSS8D2M6HM3/I VSS8D2M6HM3/I Vishay General Semiconductor - Diodes Division vss8d2m6.pdf Description: DIODE SCHOTTKY 60V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 430pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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VSS8D2M6HM3/I VSS8D2M6HM3/I Vishay General Semiconductor - Diodes Division vss8d2m6.pdf Description: DIODE SCHOTTKY 60V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 430pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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PLZ24D-G3/H PLZ24D-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 24V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
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PLZ24D-G3/H PLZ24D-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 24V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
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VB20100CHM3/I VB20100CHM3/I Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 100V TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Produkt ist nicht verfügbar
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SMCJ28CAHE3/57T SMCJ28CAHE3/57T Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
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SMCJ28CAHE3/57T SMCJ28CAHE3/57T Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
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TPSMA13A-8HE3_A/I TPSMA13A-8HE3_A/I Vishay General Semiconductor - Diodes Division Description: TVS DIODE 11.1VWM 18.2VC DO214AC
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BZX584C4V7-HG3-08 BZX584C4V7-HG3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER AUTO 300MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
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BZX584C4V7-HG3-08 BZX584C4V7-HG3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER AUTO 300MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
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VS-C06ET07T-M3 VS-C06ET07T-M3 Vishay General Semiconductor - Diodes Division vs-c06et07t-m3.pdf Description: DIODE SCHOTTKY 650V 6A TO220AC
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SMAJ33CAHM3/I SMAJ33CAHM3/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ33CAHM3_A/I SMAJ33CAHM3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ33CAHM3/H SMAJ33CAHM3/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 33VWM 53.3VC DO214AC
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BZX584C2V4-G3-08 BZX584C2V4-G3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 2.4V 200MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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BZX584C2V4-G3-08 BZX584C2V4-G3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 2.4V 200MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 3540 Stücke:
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63+0.28 EUR
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S2MHE3_A/H S2MHE3_A/H Vishay General Semiconductor - Diodes Division s2a.pdf Description: DIODE GEN PURP 1KV 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
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750+0.21 EUR
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S2MHE3_A/H S2MHE3_A/H Vishay General Semiconductor - Diodes Division s2a.pdf Description: DIODE GEN PURP 1KV 1.5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
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S2M/54 S2M/54 Vishay General Semiconductor - Diodes Division S2x.pdf Description: DIODE GEN PURP 1KV 1.5A DO214
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SMCJ14CAHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 14VWM 23.2VC DO214AB
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SMCJ14CAHM3/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 14VWM 23.2VC DO214AB
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SMCJ14CAHM3/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 14VWM 23.2VC DO214AB
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SMCJ13CAHM3/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 13VWM 21.5VC DO214AB
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SMCJ13CAHM3/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 13VWM 21.5VC DO214AB
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SMBJ43AHM3/I SMBJ43AHM3/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 43VWM 69.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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SMBJ43AHM3_A/H SMBJ43AHM3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 43VWM 69.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMBJ43AHM3/H SMBJ43AHM3/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 43VWM 69.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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SMBJ43AHM3_A/I SMBJ43AHM3_A/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 43VWM 69.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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PLZ11B-HG3_A/H PLZ11B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 11V 500MW DO219AC
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PLZ11B-HG3_A/H PLZ11B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 11V 500MW DO219AC
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34+0.53 EUR
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PLZ11C-HG3_A/H PLZ11C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 11V 500MW DO219AC
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PLZ11C-HG3_A/H PLZ11C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 11V 500MW DO219AC
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TZMB11-GS08 TZMB11-GS08 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 11V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
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TZMB11-GS08 TZMB11-GS08 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 11V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Qualification: AEC-Q101
auf Bestellung 12288 Stücke:
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PLZ11B-G3/H PLZ11B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 11V 500MW DO219AC
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PLZ11B-G3/H PLZ11B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 11V 500MW DO219AC
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ZMY11-GS08 ZMY11-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 11V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 8.5 V
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ZMY11-GS08 ZMY11-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 11V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 8.5 V
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PLZ8V2B-HG3_A/H PLZ8V2B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 7.99V 960MW DO219AC
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PLZ8V2B-HG3_A/H PLZ8V2B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 7.99V 960MW DO219AC
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PLZ8V2A-HG3_A/H PLZ8V2A-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 7.73V 960MW DO219AC
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PLZ8V2A-HG3_A/H PLZ8V2A-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 7.73V 960MW DO219AC
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PLZ8V2A-G3/H PLZ8V2A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 7.73V 960MW DO219AC
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PLZ8V2A-G3/H PLZ8V2A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 7.73V 960MW DO219AC
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35+0.51 EUR
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SMBJ33AHM3/H SMBJ33AHM3/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 33VWM 53.3VC DO214AA
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PLZ15A-G3/H PLZ15A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 15V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 11 V
Produkt ist nicht verfügbar
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PLZ15A-G3/H PLZ15A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 15V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 11 V
Produkt ist nicht verfügbar
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SMBJ130CAHM3/H smbj.pdf
SMBJ130CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 130VWM 209VC DO214AA
Produkt ist nicht verfügbar
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SMBJ130CAHE3_A/I smbj.pdf
SMBJ130CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 130VWM 209VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMBJ130CAHE3_A/H smbj.pdf
SMBJ130CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 130VWM 209VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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BYG24J-E3/TR byg24d.pdf
BYG24J-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 1800 Stücke:
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Anzahl Preis
1800+0.31 EUR
Mindestbestellmenge: 1800
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BYG24J-E3/TR byg24d.pdf
BYG24J-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 3384 Stücke:
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Anzahl Preis
22+0.83 EUR
26+0.70 EUR
100+0.49 EUR
500+0.38 EUR
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BYV16-TAP byv12.pdf
BYV16-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 8876 Stücke:
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Anzahl Preis
23+0.77 EUR
27+0.67 EUR
100+0.47 EUR
500+0.39 EUR
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BYV16-TAP byv12.pdf
BYV16-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 15000 Stücke:
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Anzahl Preis
5000+0.36 EUR
Mindestbestellmenge: 5000
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SMAJ28CAHM3/H smaj50a.pdf
SMAJ28CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO214AC
Produkt ist nicht verfügbar
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SMAJ28CAHM3/I smaj50a.pdf
SMAJ28CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ28CA61HM3J_A/H smaj50a.pdf
SMAJ28CA61HM3J_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-CZH6106FP-M3 vs-czh6106fp-m3.pdf
VS-CZH6106FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 30A TO-3PF
Packaging: Tube
Package / Case: SC-94
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 457 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.61 EUR
25+3.42 EUR
100+3.05 EUR
Mindestbestellmenge: 4
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BZD27B8V2P-M3-08 bzd27b-mseries.pdf
BZD27B8V2P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
21000+0.12 EUR
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BZD27B8V2P-M3-08 bzd27b-mseries.pdf
BZD27B8V2P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
auf Bestellung 29861 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
37+0.48 EUR
100+0.30 EUR
500+0.23 EUR
1000+0.20 EUR
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VSS8D2M6HM3/I vss8d2m6.pdf
VSS8D2M6HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 430pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VSS8D2M6HM3/I vss8d2m6.pdf
VSS8D2M6HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 430pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
30+0.59 EUR
100+0.42 EUR
500+0.31 EUR
1000+0.26 EUR
2000+0.24 EUR
5000+0.22 EUR
Mindestbestellmenge: 19
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PLZ24D-G3/H plzseries.pdf
PLZ24D-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Produkt ist nicht verfügbar
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PLZ24D-G3/H plzseries.pdf
PLZ24D-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
VB20100CHM3/I
VB20100CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 100V TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Produkt ist nicht verfügbar
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SMCJ28CAHE3/57T smcj.pdf
SMCJ28CAHE3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO214AB
Produkt ist nicht verfügbar
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SMCJ28CAHE3/57T smcj.pdf
SMCJ28CAHE3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO214AB
Produkt ist nicht verfügbar
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TPSMA13A-8HE3_A/I
TPSMA13A-8HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11.1VWM 18.2VC DO214AC
Produkt ist nicht verfügbar
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BZX584C4V7-HG3-08 bzx584c-series.pdf
BZX584C4V7-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER AUTO 300MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX584C4V7-HG3-08 bzx584c-series.pdf
BZX584C4V7-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER AUTO 300MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-C06ET07T-M3 vs-c06et07t-m3.pdf
VS-C06ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 650V 6A TO220AC
auf Bestellung 692 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.35 EUR
10+4.82 EUR
100+3.87 EUR
500+3.18 EUR
Mindestbestellmenge: 4
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SMAJ33CAHM3/I smaj50a.pdf
SMAJ33CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ33CAHM3_A/I smaj50a.pdf
SMAJ33CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ33CAHM3/H smaj50a.pdf
SMAJ33CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AC
Produkt ist nicht verfügbar
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BZX584C2V4-G3-08 bzx584c-series.pdf
BZX584C2V4-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 200MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Produkt ist nicht verfügbar
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BZX584C2V4-G3-08 bzx584c-series.pdf
BZX584C2V4-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 200MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 3540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
92+0.19 EUR
199+0.09 EUR
500+0.08 EUR
1000+0.08 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
S2MHE3_A/H s2a.pdf
S2MHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+0.21 EUR
1500+0.19 EUR
2250+0.18 EUR
Mindestbestellmenge: 750
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S2MHE3_A/H s2a.pdf
S2MHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1.5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
43+0.42 EUR
100+0.28 EUR
Mindestbestellmenge: 29
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S2M/54 S2x.pdf
S2M/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1.5A DO214
Produkt ist nicht verfügbar
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SMCJ14CAHE3_A/I smcj.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC DO214AB
Produkt ist nicht verfügbar
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SMCJ14CAHM3/I smcj.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC DO214AB
Produkt ist nicht verfügbar
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SMCJ14CAHM3/H smcj.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC DO214AB
Produkt ist nicht verfügbar
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SMCJ13CAHM3/I smcj.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.5VC DO214AB
Produkt ist nicht verfügbar
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SMCJ13CAHM3/H smcj.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.5VC DO214AB
Produkt ist nicht verfügbar
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SMBJ43AHM3/I smbj.pdf
SMBJ43AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 69.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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SMBJ43AHM3_A/H smbj.pdf
SMBJ43AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 69.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ43AHM3/H smbj.pdf
SMBJ43AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 69.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ43AHM3_A/I smbj.pdf
SMBJ43AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 69.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PLZ11B-HG3_A/H plzseries.pdf
PLZ11B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW DO219AC
Produkt ist nicht verfügbar
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PLZ11B-HG3_A/H plzseries.pdf
PLZ11B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW DO219AC
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
34+0.53 EUR
Mindestbestellmenge: 28
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PLZ11C-HG3_A/H plzseries.pdf
PLZ11C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW DO219AC
Produkt ist nicht verfügbar
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PLZ11C-HG3_A/H plzseries.pdf
PLZ11C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW DO219AC
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
34+0.53 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
TZMB11-GS08 tzm.pdf
TZMB11-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.09 EUR
5000+0.08 EUR
7500+0.07 EUR
Mindestbestellmenge: 2500
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TZMB11-GS08 tzm.pdf
TZMB11-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Qualification: AEC-Q101
auf Bestellung 12288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
118+0.15 EUR
215+0.08 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 84
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PLZ11B-G3/H plzseries.pdf
PLZ11B-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW DO219AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PLZ11B-G3/H plzseries.pdf
PLZ11B-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW DO219AC
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
38+0.47 EUR
Mindestbestellmenge: 31
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ZMY11-GS08 zmy3v9.pdf
ZMY11-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 8.5 V
Produkt ist nicht verfügbar
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ZMY11-GS08 zmy3v9.pdf
ZMY11-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 8.5 V
auf Bestellung 1359 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
30+0.60 EUR
100+0.41 EUR
500+0.31 EUR
Mindestbestellmenge: 24
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PLZ8V2B-HG3_A/H plzseries.pdf
PLZ8V2B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.99V 960MW DO219AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PLZ8V2B-HG3_A/H plzseries.pdf
PLZ8V2B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.99V 960MW DO219AC
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PLZ8V2A-HG3_A/H plzseries.pdf
PLZ8V2A-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.73V 960MW DO219AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PLZ8V2A-HG3_A/H plzseries.pdf
PLZ8V2A-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.73V 960MW DO219AC
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PLZ8V2A-G3/H plzseries.pdf
PLZ8V2A-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.73V 960MW DO219AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PLZ8V2A-G3/H plzseries.pdf
PLZ8V2A-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.73V 960MW DO219AC
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
42+0.42 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ33AHM3/H smbj.pdf
SMBJ33AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PLZ15A-G3/H plzseries.pdf
PLZ15A-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 11 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PLZ15A-G3/H plzseries.pdf
PLZ15A-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 11 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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