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TGL41-33A-E3/97 TGL41-33A-E3/97 Vishay General Semiconductor - Diodes Division tgl41.pdf Description: TVS DIODE 28.2VWM 45.7V DO213AB
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Unidirectional Channels: 1
Supplier Device Package: DO-213AB (GL41)
Voltage - Reverse Standoff (Typ): 28.2V
Current - Peak Pulse (10/1000µs): 8.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Cut Tape (CT)
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500+1.13 EUR
1000+1.04 EUR
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TGL41-6.8A-E3/97 TGL41-6.8A-E3/97 Vishay General Semiconductor - Diodes Division tgl41.pdf Description: TVS DIODE 5.8VWM 10.5V DO213AB
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: DO-213AB (GL41)
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 38.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
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TGL41-6.8A-E3/97 TGL41-6.8A-E3/97 Vishay General Semiconductor - Diodes Division tgl41.pdf Description: TVS DIODE 5.8VWM 10.5V DO213AB
Current - Peak Pulse (10/1000µs): 38.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: DO-213AB (GL41)
Voltage - Reverse Standoff (Typ): 5.8V
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TGL41-56A-E3/97 TGL41-56A-E3/97 Vishay General Semiconductor - Diodes Division tgl41.pdf Description: TVS DIODE 47.8VWM 77VC DO213AB
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 77V
Voltage - Breakdown (Min): 53.2V
Unidirectional Channels: 1
Supplier Device Package: DO-213AB (GL41)
Voltage - Reverse Standoff (Typ): 47.8V
Current - Peak Pulse (10/1000µs): 5.2A
Applications: General Purpose
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TGL41-56A-E3/97 TGL41-56A-E3/97 Vishay General Semiconductor - Diodes Division tgl41.pdf Description: TVS DIODE 47.8VWM 77VC DO213AB
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 77V
Voltage - Breakdown (Min): 53.2V
Unidirectional Channels: 1
Supplier Device Package: DO-213AB (GL41)
Voltage - Reverse Standoff (Typ): 47.8V
Current - Peak Pulse (10/1000µs): 5.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Cut Tape (CT)
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TGL41-16A-E3/96 TGL41-16A-E3/96 Vishay General Semiconductor - Diodes Division tgl41.pdf Description: TVS DIODE 13.6VWM 22.5V DO213AB
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 22.5V
Voltage - Breakdown (Min): 15.2V
Unidirectional Channels: 1
Supplier Device Package: DO-213AB (GL41)
Voltage - Reverse Standoff (Typ): 13.6V
Current - Peak Pulse (10/1000µs): 17.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
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TGL41-16A-E3/96 TGL41-16A-E3/96 Vishay General Semiconductor - Diodes Division tgl41.pdf Description: TVS DIODE 13.6VWM 22.5V DO213AB
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 22.5V
Voltage - Breakdown (Min): 15.2V
Unidirectional Channels: 1
Supplier Device Package: DO-213AB (GL41)
Voltage - Reverse Standoff (Typ): 13.6V
Current - Peak Pulse (10/1000µs): 17.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
auf Bestellung 2900 Stücke:
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TGL41-39A-E3/96 TGL41-39A-E3/96 Vishay General Semiconductor - Diodes Division tgl41.pdf Description: TVS DIODE 33.3VWM 53.9VC GL41
Produkt ist nicht verfügbar
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TGL41-39A-E3/96 TGL41-39A-E3/96 Vishay General Semiconductor - Diodes Division tgl41.pdf Description: TVS DIODE 33.3VWM 53.9VC GL41
Produkt ist nicht verfügbar
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BYM13-40HE3/96 BYM13-40HE3/96 Vishay General Semiconductor - Diodes Division bym13.pdf Description: DIODE SCHOTTKY 40V 1A GL41
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-213AB (GL41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
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BYM13-40HE3/96 BYM13-40HE3/96 Vishay General Semiconductor - Diodes Division bym13.pdf Description: DIODE SCHOTTKY 40V 1A GL41
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-213AB (GL41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Cut Tape (CT)
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TPSMB36AHE3_A/I TPSMB36AHE3_A/I Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 30.8VWM DO214AA
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 12A
Operating Temperature: -65°C ~ 185°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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TPSMB36AHE3_A/I TPSMB36AHE3_A/I Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 30.8VWM DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 12A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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TPSMB33AHE3_A/H TPSMB33AHE3_A/H Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 28.2V
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Peak Pulse (10/1000µs): 13.1A
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TPSMB33AHE3_A/H TPSMB33AHE3_A/H Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 28.2V
Current - Peak Pulse (10/1000µs): 13.1A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Unidirectional Channels: 1
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TPSMB33AHE3_A/I TPSMB33AHE3_A/I Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 28.2V
Current - Peak Pulse (10/1000µs): 13.1A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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TPSMB33AHE3_A/I TPSMB33AHE3_A/I Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 28.2V
Current - Peak Pulse (10/1000µs): 13.1A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
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P6SMB12CAHE3_A/I P6SMB12CAHE3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 10.2VWM 16.7V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 35.9A
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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P6SMB12CAHM3_A/H P6SMB12CAHM3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 10.2VWM 16.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 35.9A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V30K60-M3/H V30K60-M3/H Vishay General Semiconductor - Diodes Division v30k60.pdf Description: DIODE SCHOTTKY 60V 5.2A FLATPAK
Capacitance @ Vr, F: 3.3nF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 5.2A
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V30K60-M3/H V30K60-M3/H Vishay General Semiconductor - Diodes Division v30k60.pdf Description: DIODE SCHOTTKY 60V 5.2A FLATPAK
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 5.2A
Capacitance @ Vr, F: 3.3nF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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V30K60HM3/H V30K60HM3/H Vishay General Semiconductor - Diodes Division v30k60.pdf Description: DIODE SCHOTTKY 60V 5.2A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 5.2A
Capacitance @ Vr, F: 3300pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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V30K60HM3/H V30K60HM3/H Vishay General Semiconductor - Diodes Division v30k60.pdf Description: DIODE SCHOTTKY 60V 5.2A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 5.2A
Capacitance @ Vr, F: 3300pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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V30KL45-M3/H V30KL45-M3/H Vishay General Semiconductor - Diodes Division v30kl45.pdf Description: DIODE SCHOTTKY 45V 6.3A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4750pF @ 4V, 1MHz
Current - Average Rectified (Io): 6.3A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.7 mA @ 45 V
Qualification: AEC-Q101
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V30KL45-M3/H V30KL45-M3/H Vishay General Semiconductor - Diodes Division v30kl45.pdf Description: DIODE SCHOTTKY 45V 6.3A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4750pF @ 4V, 1MHz
Current - Average Rectified (Io): 6.3A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.7 mA @ 45 V
Qualification: AEC-Q101
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500+0.92 EUR
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V30KL45HM3/H V30KL45HM3/H Vishay General Semiconductor - Diodes Division v30kl45.pdf Description: DIODE SCHOTTKY 45V 6.3A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4750pF @ 4V, 1MHz
Current - Average Rectified (Io): 6.3A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.7 mA @ 45 V
Qualification: AEC-Q101
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V30KL45HM3/H V30KL45HM3/H Vishay General Semiconductor - Diodes Division v30kl45.pdf Description: DIODE SCHOTTKY 45V 6.3A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4750pF @ 4V, 1MHz
Current - Average Rectified (Io): 6.3A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.7 mA @ 45 V
Qualification: AEC-Q101
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VBT10202C-M3/4W VBT10202C-M3/4W Vishay General Semiconductor - Diodes Division vt10202c.pdf Description: DIODE ARR SCHOTT 200V 5A TO263AB
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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RMPG06K-E3/54 RMPG06K-E3/54 Vishay General Semiconductor - Diodes Division rmpg06.pdf Description: DIODE STANDARD 800V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
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RMPG06K-E3/54 RMPG06K-E3/54 Vishay General Semiconductor - Diodes Division rmpg06.pdf Description: DIODE STANDARD 800V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Cut Tape (CT)
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VCAN26B2-03G-E3-08 VCAN26B2-03G-E3-08 Vishay General Semiconductor - Diodes Division vcan26b2-03g.pdf Description: TVS DIODE 26.5VWM 50VC SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 100W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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VCAN26B2-03G-E3-08 VCAN26B2-03G-E3-08 Vishay General Semiconductor - Diodes Division vcan26b2-03g.pdf Description: TVS DIODE 26.5VWM 50VC SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 100W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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V15KM150C-M3/H V15KM150C-M3/H Vishay General Semiconductor - Diodes Division v15km150c.pdf Description: DIODE ARR SCHOTT 150V 3.7A FLTPK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3.7A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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V15KM150C-M3/H V15KM150C-M3/H Vishay General Semiconductor - Diodes Division v15km150c.pdf Description: DIODE ARR SCHOTT 150V 3.7A FLTPK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3.7A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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VS-85HFR120M VS-85HFR120M Vishay General Semiconductor - Diodes Division vs-85hfrseries.pdf Description: DIODE STD REV 1200V 85A DO203AB
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 180°C
Supplier Device Package: DO-203AB (DO-5)
Current - Average Rectified (Io): 85A
Technology: Standard, Reverse Polarity
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
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VS-72HFR120 VS-72HFR120 Vishay General Semiconductor - Diodes Division vs-70hfrseries.pdf Description: DIODE STD REV 1200V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 220 A
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VS-88HFR120 VS-88HFR120 Vishay General Semiconductor - Diodes Division vs-85hfrseries.pdf Description: DIODE STD REV 1200V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
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VS-40HFR120M VS-40HFR120M Vishay General Semiconductor - Diodes Division vs-40hfrseries.pdf Description: DIODE STD REV 1200V 40A DO203AB
Part Status: Active
Operating Temperature - Junction: -65°C ~ 190°C
Supplier Device Package: DO-203AB (DO-5)
Current - Average Rectified (Io): 40A
Technology: Standard, Reverse Polarity
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 1200 V
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VS-70HFR120M VS-70HFR120M Vishay General Semiconductor - Diodes Division vs-70hfrseries.pdf Description: DIODE STD REV 1200V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 220 A
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1N5233B-TAP 1N5233B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 6V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
Produkt ist nicht verfügbar
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1N5233B-TR 1N5233B-TR Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 6V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
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1N5233B-TR 1N5233B-TR Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 6V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
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GBPC3506W-E4/51 GBPC3506W-E4/51 Vishay General Semiconductor - Diodes Division gbpc12.pdf Description: BRIDGE RECT 1P 600V 35A GBPC-W
Packaging: Box
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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SMCJ30AHE3_A/H SMCJ30AHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMCJ30AHE3_A/H SMCJ30AHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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VS-U5FX300FA60 VS-U5FX300FA60 Vishay General Semiconductor - Diodes Division vs-u5fx240fa120.pdf Description: DIODE MODULE GP 600V 150A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 72 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 150 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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VS-U5FH120FA120 VS-U5FH120FA120 Vishay General Semiconductor - Diodes Division vs-u5fh120fa120.pdf Description: DIODE MODULE GP 1200V 60A SOT227
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 60A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 71 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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VS-U5FH300FA60 VS-U5FH300FA60 Vishay General Semiconductor - Diodes Division vs-u5fh300fa60.pdf Description: DIODE MODULE GP 600V 150A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 76 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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VS-U5FX60FA60 VS-U5FX60FA60 Vishay General Semiconductor - Diodes Division vs-u5fx60fa60.pdf Description: SOT-227 - GEN5 FRED IN PARALLEL
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 30A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 57 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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B380C800G-E4/51 B380C800G-E4/51 Vishay General Semiconductor - Diodes Division 800g.pdf Description: BRIDGE RECT 1P 600V 900MA WOG
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOG
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Average Rectified (Io): 900 mA
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: WOG
Technology: Standard
Operating Temperature: -40°C ~ 125°C (TJ)
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US1G-M3/5AT US1G-M3/5AT Vishay General Semiconductor - Diodes Division us1_test_dcicons.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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US1G-M3/5AT US1G-M3/5AT Vishay General Semiconductor - Diodes Division us1_test_dcicons.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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58+0.37 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.14 EUR
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VS-10TQ035-M3 VS-10TQ035-M3 Vishay General Semiconductor - Diodes Division vs-10tq035-m3.pdf Description: DIODE SCHOTTKY 35V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
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VS-40EPF12-M3 VS-40EPF12-M3 Vishay General Semiconductor - Diodes Division vs-40epf-m3series.pdf Description: DIODE STANDARD 1200V 40A TO247AC
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 450 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 206 Stücke:
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VS-40EPF02-M3 VS-40EPF02-M3 Vishay General Semiconductor - Diodes Division vs-40epf0-m3series.pdf Description: DIODE STANDARD 200V 40A TO247AC
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 466 Stücke:
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VS-40EPF06-M3 VS-40EPF06-M3 Vishay General Semiconductor - Diodes Division vs-40epf0-m3series.pdf Description: DIODE STANDARD 600V 40A TO247AC
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC-2L
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 476 Stücke:
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BZX55C11-TR BZX55C11-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 11V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Qualification: AEC-Q101
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BZX55C11-TR BZX55C11-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 11V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Qualification: AEC-Q101
auf Bestellung 30177 Stücke:
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53+0.4 EUR
100+0.35 EUR
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BZT52B15-HE3-08 BZT52B15-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 15V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B15-HE3-08 BZT52B15-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 15V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
auf Bestellung 2249 Stücke:
Lieferzeit 10-14 Tag (e)
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73+0.29 EUR
118+0.18 EUR
500+0.13 EUR
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TGL41-33A-E3/97 tgl41.pdf
TGL41-33A-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO213AB
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Unidirectional Channels: 1
Supplier Device Package: DO-213AB (GL41)
Voltage - Reverse Standoff (Typ): 28.2V
Current - Peak Pulse (10/1000µs): 8.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Cut Tape (CT)
auf Bestellung 3400 Stücke:
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7+3.37 EUR
10+2.14 EUR
100+1.43 EUR
500+1.13 EUR
1000+1.04 EUR
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TGL41-6.8A-E3/97 tgl41.pdf
TGL41-6.8A-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5V DO213AB
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: DO-213AB (GL41)
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 38.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
auf Bestellung 5000 Stücke:
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5000+0.37 EUR
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TGL41-6.8A-E3/97 tgl41.pdf
TGL41-6.8A-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5V DO213AB
Current - Peak Pulse (10/1000µs): 38.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: DO-213AB (GL41)
Voltage - Reverse Standoff (Typ): 5.8V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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17+1.26 EUR
24+0.9 EUR
100+0.62 EUR
500+0.49 EUR
1000+0.4 EUR
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TGL41-56A-E3/97 tgl41.pdf
TGL41-56A-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 47.8VWM 77VC DO213AB
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 77V
Voltage - Breakdown (Min): 53.2V
Unidirectional Channels: 1
Supplier Device Package: DO-213AB (GL41)
Voltage - Reverse Standoff (Typ): 47.8V
Current - Peak Pulse (10/1000µs): 5.2A
Applications: General Purpose
Produkt ist nicht verfügbar
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TGL41-56A-E3/97 tgl41.pdf
TGL41-56A-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 47.8VWM 77VC DO213AB
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 77V
Voltage - Breakdown (Min): 53.2V
Unidirectional Channels: 1
Supplier Device Package: DO-213AB (GL41)
Voltage - Reverse Standoff (Typ): 47.8V
Current - Peak Pulse (10/1000µs): 5.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Cut Tape (CT)
auf Bestellung 4798 Stücke:
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7+3.37 EUR
10+2.14 EUR
100+1.43 EUR
500+1.13 EUR
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TGL41-16A-E3/96 tgl41.pdf
TGL41-16A-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13.6VWM 22.5V DO213AB
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 22.5V
Voltage - Breakdown (Min): 15.2V
Unidirectional Channels: 1
Supplier Device Package: DO-213AB (GL41)
Voltage - Reverse Standoff (Typ): 13.6V
Current - Peak Pulse (10/1000µs): 17.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
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AnzahlPrivatkunde
1500+0.3 EUR
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TGL41-16A-E3/96 tgl41.pdf
TGL41-16A-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13.6VWM 22.5V DO213AB
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 22.5V
Voltage - Breakdown (Min): 15.2V
Unidirectional Channels: 1
Supplier Device Package: DO-213AB (GL41)
Voltage - Reverse Standoff (Typ): 13.6V
Current - Peak Pulse (10/1000µs): 17.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
auf Bestellung 2900 Stücke:
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19+1.11 EUR
26+0.83 EUR
100+0.56 EUR
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TGL41-39A-E3/96 tgl41.pdf
TGL41-39A-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC GL41
Produkt ist nicht verfügbar
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TGL41-39A-E3/96 tgl41.pdf
TGL41-39A-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC GL41
Produkt ist nicht verfügbar
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BYM13-40HE3/96 bym13.pdf
BYM13-40HE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A GL41
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-213AB (GL41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.31 EUR
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BYM13-40HE3/96 bym13.pdf
BYM13-40HE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A GL41
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-213AB (GL41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Cut Tape (CT)
auf Bestellung 4758 Stücke:
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19+1.11 EUR
23+0.95 EUR
100+0.67 EUR
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TPSMB36AHE3_A/I tpsmb.pdf
TPSMB36AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM DO214AA
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 12A
Operating Temperature: -65°C ~ 185°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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TPSMB36AHE3_A/I tpsmb.pdf
TPSMB36AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 12A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1149 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.09 EUR
26+0.81 EUR
100+0.56 EUR
500+0.44 EUR
1000+0.39 EUR
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TPSMB33AHE3_A/H tpsmb.pdf
TPSMB33AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 28.2V
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Peak Pulse (10/1000µs): 13.1A
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+0.42 EUR
1500+0.38 EUR
2250+0.36 EUR
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TPSMB33AHE3_A/H tpsmb.pdf
TPSMB33AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 28.2V
Current - Peak Pulse (10/1000µs): 13.1A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Unidirectional Channels: 1
auf Bestellung 3236 Stücke:
Lieferzeit 10-14 Tag (e)
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19+1.13 EUR
25+0.84 EUR
100+0.58 EUR
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TPSMB33AHE3_A/I tpsmb.pdf
TPSMB33AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 28.2V
Current - Peak Pulse (10/1000µs): 13.1A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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TPSMB33AHE3_A/I tpsmb.pdf
TPSMB33AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 28.2V
Current - Peak Pulse (10/1000µs): 13.1A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
auf Bestellung 3050 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.88 EUR
29+0.74 EUR
100+0.55 EUR
500+0.45 EUR
1000+0.4 EUR
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P6SMB12CAHE3_A/I p6smb.pdf
P6SMB12CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 16.7V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 35.9A
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6SMB12CAHM3_A/H p6smb.pdf
P6SMB12CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 16.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 35.9A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V30K60-M3/H v30k60.pdf
V30K60-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5.2A FLATPAK
Capacitance @ Vr, F: 3.3nF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 5.2A
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1500+1 EUR
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V30K60-M3/H v30k60.pdf
V30K60-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5.2A FLATPAK
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 5.2A
Capacitance @ Vr, F: 3.3nF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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12+1.84 EUR
100+1.44 EUR
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V30K60HM3/H v30k60.pdf
V30K60HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5.2A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 5.2A
Capacitance @ Vr, F: 3300pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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1500+0.82 EUR
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V30K60HM3/H v30k60.pdf
V30K60HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5.2A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 5.2A
Capacitance @ Vr, F: 3300pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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14+1.52 EUR
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500+1.01 EUR
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V30KL45-M3/H v30kl45.pdf
V30KL45-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6.3A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4750pF @ 4V, 1MHz
Current - Average Rectified (Io): 6.3A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.7 mA @ 45 V
Qualification: AEC-Q101
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1500+0.8 EUR
3000+0.74 EUR
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V30KL45-M3/H v30kl45.pdf
V30KL45-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6.3A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4750pF @ 4V, 1MHz
Current - Average Rectified (Io): 6.3A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.7 mA @ 45 V
Qualification: AEC-Q101
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12+1.75 EUR
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V30KL45HM3/H v30kl45.pdf
V30KL45HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6.3A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4750pF @ 4V, 1MHz
Current - Average Rectified (Io): 6.3A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.7 mA @ 45 V
Qualification: AEC-Q101
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1500+0.69 EUR
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V30KL45HM3/H v30kl45.pdf
V30KL45HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6.3A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4750pF @ 4V, 1MHz
Current - Average Rectified (Io): 6.3A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.7 mA @ 45 V
Qualification: AEC-Q101
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10+2.28 EUR
15+1.46 EUR
100+1.17 EUR
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VBT10202C-M3/4W vt10202c.pdf
VBT10202C-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 200V 5A TO263AB
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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7+3.06 EUR
50+2.45 EUR
100+2.01 EUR
500+1.7 EUR
1000+1.45 EUR
2000+1.38 EUR
5000+1.32 EUR
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RMPG06K-E3/54 rmpg06.pdf
RMPG06K-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RMPG06K-E3/54 rmpg06.pdf
RMPG06K-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Cut Tape (CT)
auf Bestellung 954 Stücke:
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29+0.74 EUR
43+0.49 EUR
100+0.3 EUR
500+0.26 EUR
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VCAN26B2-03G-E3-08 vcan26b2-03g.pdf
VCAN26B2-03G-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26.5VWM 50VC SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 100W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
6000+0.12 EUR
9000+0.12 EUR
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VCAN26B2-03G-E3-08 vcan26b2-03g.pdf
VCAN26B2-03G-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26.5VWM 50VC SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 100W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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AnzahlPrivatkunde
42+0.5 EUR
62+0.35 EUR
100+0.23 EUR
500+0.18 EUR
1000+0.15 EUR
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V15KM150C-M3/H v15km150c.pdf
V15KM150C-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 3.7A FLTPK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3.7A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 4500 Stücke:
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1500+0.74 EUR
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V15KM150C-M3/H v15km150c.pdf
V15KM150C-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 3.7A FLTPK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3.7A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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VS-85HFR120M vs-85hfrseries.pdf
VS-85HFR120M
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD REV 1200V 85A DO203AB
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 180°C
Supplier Device Package: DO-203AB (DO-5)
Current - Average Rectified (Io): 85A
Technology: Standard, Reverse Polarity
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
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VS-72HFR120 vs-70hfrseries.pdf
VS-72HFR120
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD REV 1200V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 220 A
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VS-88HFR120 vs-85hfrseries.pdf
VS-88HFR120
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD REV 1200V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
auf Bestellung 72 Stücke:
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VS-40HFR120M vs-40hfrseries.pdf
VS-40HFR120M
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD REV 1200V 40A DO203AB
Part Status: Active
Operating Temperature - Junction: -65°C ~ 190°C
Supplier Device Package: DO-203AB (DO-5)
Current - Average Rectified (Io): 40A
Technology: Standard, Reverse Polarity
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 1200 V
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VS-70HFR120M vs-70hfrseries.pdf
VS-70HFR120M
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD REV 1200V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 220 A
auf Bestellung 59 Stücke:
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10+31.07 EUR
50+25.92 EUR
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1N5233B-TAP 1n5221.pdf
1N5233B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
Produkt ist nicht verfügbar
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1N5233B-TR 1n5221.pdf
1N5233B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
auf Bestellung 10000 Stücke:
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10000+0.17 EUR
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1N5233B-TR 1n5221.pdf
1N5233B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
auf Bestellung 18457 Stücke:
Lieferzeit 10-14 Tag (e)
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24+0.9 EUR
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GBPC3506W-E4/51 gbpc12.pdf
GBPC3506W-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 35A GBPC-W
Packaging: Box
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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SMCJ30AHE3_A/H smcj.pdf
SMCJ30AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMCJ30AHE3_A/H smcj.pdf
SMCJ30AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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VS-U5FX300FA60 vs-u5fx240fa120.pdf
VS-U5FX300FA60
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 600V 150A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 72 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 150 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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VS-U5FH120FA120 vs-u5fh120fa120.pdf
VS-U5FH120FA120
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 60A SOT227
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 60A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 71 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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VS-U5FH300FA60 vs-u5fh300fa60.pdf
VS-U5FH300FA60
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 600V 150A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 76 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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VS-U5FX60FA60 vs-u5fx60fa60.pdf
VS-U5FX60FA60
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SOT-227 - GEN5 FRED IN PARALLEL
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 30A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 57 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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B380C800G-E4/51 800g.pdf
B380C800G-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 900MA WOG
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOG
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Average Rectified (Io): 900 mA
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: WOG
Technology: Standard
Operating Temperature: -40°C ~ 125°C (TJ)
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US1G-M3/5AT us1_test_dcicons.pdf
US1G-M3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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US1G-M3/5AT us1_test_dcicons.pdf
US1G-M3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 9825 Stücke:
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VS-10TQ035-M3 vs-10tq035-m3.pdf
VS-10TQ035-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
auf Bestellung 896 Stücke:
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VS-40EPF12-M3 vs-40epf-m3series.pdf
VS-40EPF12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 40A TO247AC
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 450 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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VS-40EPF02-M3 vs-40epf0-m3series.pdf
VS-40EPF02-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 40A TO247AC
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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VS-40EPF06-M3 vs-40epf0-m3series.pdf
VS-40EPF06-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 40A TO247AC
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC-2L
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 476 Stücke:
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BZX55C11-TR bzx55.pdf
BZX55C11-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Qualification: AEC-Q101
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BZX55C11-TR bzx55.pdf
BZX55C11-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Qualification: AEC-Q101
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BZT52B15-HE3-08 bzt52.pdf
BZT52B15-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B15-HE3-08 bzt52.pdf
BZT52B15-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
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