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VS-U5FX300FA60 VS-U5FX300FA60 Vishay General Semiconductor - Diodes Division vs-u5fx240fa120.pdf Description: DIODE MODULE GP 600V 150A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 72 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 150 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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VS-U5FH120FA120 VS-U5FH120FA120 Vishay General Semiconductor - Diodes Division vs-u5fh120fa120.pdf Description: DIODE MODULE GP 1200V 60A SOT227
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 60A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 71 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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VS-U5FH300FA60 VS-U5FH300FA60 Vishay General Semiconductor - Diodes Division vs-u5fh300fa60.pdf Description: DIODE MODULE GP 600V 150A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 76 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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VS-U5FX60FA60 VS-U5FX60FA60 Vishay General Semiconductor - Diodes Division vs-u5fx60fa60.pdf Description: SOT-227 - GEN5 FRED IN PARALLEL
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 30A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 57 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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B380C800G-E4/51 B380C800G-E4/51 Vishay General Semiconductor - Diodes Division 800g.pdf Description: BRIDGE RECT 1P 600V 900MA WOG
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOG
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Average Rectified (Io): 900 mA
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: WOG
Technology: Standard
Operating Temperature: -40°C ~ 125°C (TJ)
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US1G-M3/5AT US1G-M3/5AT Vishay General Semiconductor - Diodes Division us1_test_dcicons.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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US1G-M3/5AT US1G-M3/5AT Vishay General Semiconductor - Diodes Division us1_test_dcicons.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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VS-10TQ035-M3 VS-10TQ035-M3 Vishay General Semiconductor - Diodes Division vs-10tq035-m3.pdf Description: DIODE SCHOTTKY 35V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
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VS-40EPF12-M3 VS-40EPF12-M3 Vishay General Semiconductor - Diodes Division vs-40epf-m3series.pdf Description: DIODE STANDARD 1200V 40A TO247AC
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 450 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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VS-40EPF02-M3 VS-40EPF02-M3 Vishay General Semiconductor - Diodes Division vs-40epf0-m3series.pdf Description: DIODE STANDARD 200V 40A TO247AC
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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VS-40EPF06-M3 VS-40EPF06-M3 Vishay General Semiconductor - Diodes Division vs-40epf0-m3series.pdf Description: DIODE STANDARD 600V 40A TO247AC
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC-2L
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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BZX55C11-TR BZX55C11-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 11V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Qualification: AEC-Q101
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BZX55C11-TR BZX55C11-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 11V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Qualification: AEC-Q101
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BZT52B15-HE3-08 BZT52B15-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 15V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
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BZT52B15-HE3-08 BZT52B15-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 15V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
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BYG20GHE3_A/H BYG20GHE3_A/H Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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BYG20GHE3_A/H BYG20GHE3_A/H Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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BZX84C5V1-G3-08 BZX84C5V1-G3-08 Vishay General Semiconductor - Diodes Division bzx84-g_series.pdf Description: DIODE ZENER 5.1V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
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BZX84C5V1-G3-08 BZX84C5V1-G3-08 Vishay General Semiconductor - Diodes Division bzx84-g_series.pdf Description: DIODE ZENER 5.1V 300MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
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BZX85C3V0-TAP BZX85C3V0-TAP Vishay General Semiconductor - Diodes Division BZX85_Series.pdf Description: DIODE ZENER 3V 1.3W DO204AL
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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BZX85C3V0-TAP BZX85C3V0-TAP Vishay General Semiconductor - Diodes Division BZX85_Series.pdf Description: DIODE ZENER 3V 1.3W DO204AL
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Qualification: AEC-Q101
Grade: Automotive
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VS-8ETH06FP-N3 VS-8ETH06FP-N3 Vishay General Semiconductor - Diodes Division vs-8eth06fp.pdf Description: DIODE STANDARD 600V 8A TO2202 FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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RS07B-GS08 RS07B-GS08 Vishay General Semiconductor - Diodes Division rs07b.pdf Description: DIODE STD 100V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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RS07B-GS08 RS07B-GS08 Vishay General Semiconductor - Diodes Division rs07b.pdf Description: DIODE STD 100V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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RS07K-M-08 RS07K-M-08 Vishay General Semiconductor - Diodes Division rs07bm.pdf Description: DIODE STD 800V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: AEC-Q101
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RS07K-M-08 RS07K-M-08 Vishay General Semiconductor - Diodes Division rs07bm.pdf Description: DIODE STD 800V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 29472 Stücke:
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RS07D-GS08 RS07D-GS08 Vishay General Semiconductor - Diodes Division rs07b.pdf Description: DIODE STD 200V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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RS07D-GS08 RS07D-GS08 Vishay General Semiconductor - Diodes Division rs07b.pdf Description: DIODE STD 200V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 29457 Stücke:
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RS07J-GS18 RS07J-GS18 Vishay General Semiconductor - Diodes Division rs07b.pdf Description: DIODE STD 600V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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RS07J-GS18 RS07J-GS18 Vishay General Semiconductor - Diodes Division rs07b.pdf Description: DIODE STD 600V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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RS07K-GS18 RS07K-GS18 Vishay General Semiconductor - Diodes Division rs07b.pdf Description: DIODE STD 800V 500MA DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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RS07K-GS18 RS07K-GS18 Vishay General Semiconductor - Diodes Division rs07b.pdf Description: DIODE STD 800V 500MA DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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RS07K-GS08 RS07K-GS08 Vishay General Semiconductor - Diodes Division rs07b.pdf Description: DIODE STD 800V 500MA DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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RS07K-GS08 RS07K-GS08 Vishay General Semiconductor - Diodes Division rs07b.pdf Description: DIODE STD 800V 500MA DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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RS07K-HM3-08 RS07K-HM3-08 Vishay General Semiconductor - Diodes Division rs07bm.pdf Description: DIODE STD 800V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: AEC-Q101
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RS07K-HM3-08 RS07K-HM3-08 Vishay General Semiconductor - Diodes Division rs07bm.pdf Description: DIODE STD 800V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 35539 Stücke:
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RS07D-HM3-08 RS07D-HM3-08 Vishay General Semiconductor - Diodes Division rs07bm.pdf Description: DIODE STD 200V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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RS07D-HM3-08 RS07D-HM3-08 Vishay General Semiconductor - Diodes Division rs07bm.pdf Description: DIODE STD 200V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 31486 Stücke:
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SMCJ5.0AHM3_A/H SMCJ5.0AHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 5VWM 9.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 163A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMCJ5.0AHM3_A/H SMCJ5.0AHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 5VWM 9.2VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 163A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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VS-20TQ035SHM3 VS-20TQ035SHM3 Vishay General Semiconductor - Diodes Division vs-20tq035shm3.pdf Description: DIODE SCHOTTKY 35V 20A TO263AB
Current - Reverse Leakage @ Vr: 2.7 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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VS-20TQ035STRRHM3 VS-20TQ035STRRHM3 Vishay General Semiconductor - Diodes Division vs-20tq035shm3.pdf Description: DIODE SCHOTTKY 35V 20A TO263AB
Current - Reverse Leakage @ Vr: 2.7 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-20TQ035THN3 Vishay General Semiconductor - Diodes Division vs-20tq035thn3.pdf Description: DIODE SCHOTTKY 35V 20A TO220AC
Current - Reverse Leakage @ Vr: 2.7 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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VS-20TQ035STRLHM3 VS-20TQ035STRLHM3 Vishay General Semiconductor - Diodes Division vs-20tq035shm3.pdf Description: DIODE SCHOTTKY 35V 20A TO263AB
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 2.7 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 35 V
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-20TQ035-M3 VS-20TQ035-M3 Vishay General Semiconductor - Diodes Division vs-20tq035-m3.pdf Description: DIODE SCHOTTKY 35V 20A TO220AC
Current - Reverse Leakage @ Vr: 2.7 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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US1DHM3_A/H US1DHM3_A/H Vishay General Semiconductor - Diodes Division us1_test_dcicons.pdf Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZD27C43P-E3-08 BZD27C43P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 43V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
auf Bestellung 21000 Stücke:
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3000+0.29 EUR
6000+0.26 EUR
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BZD27C43P-E3-08 BZD27C43P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 43V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
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BZD27C4V7P-E3-08 BZD27C4V7P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 4.7V 800MW DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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BZD27C4V7P-E3-08 BZD27C4V7P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 4.7V 800MW DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 23995 Stücke:
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BZD27C47P-E3-18 BZD27C47P-E3-18 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 47V 800MW DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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BZD27C47P-E3-18 BZD27C47P-E3-18 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 47V 800MW DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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BZD27C47P-E3-08 BZD27C47P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 47V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
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BZD27C47P-E3-08 BZD27C47P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 47V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
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BZD27C4V3P-HE3-08 BZD27C4V3P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 4.3V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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BZD27C4V3P-HE3-08 BZD27C4V3P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 4.3V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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BZD27C4V7P-HE3-08 BZD27C4V7P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 4.7V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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BZD27C4V7P-HE3-08 BZD27C4V7P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 4.7V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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BZD27C4V7P-M3-08 BZD27C4V7P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 4.7V 800MW DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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BZD27C4V7P-M3-08 BZD27C4V7P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 4.7V 800MW DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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VS-U5FX300FA60 vs-u5fx240fa120.pdf
VS-U5FX300FA60
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 600V 150A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 72 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 150 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 117 Stücke:
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VS-U5FH120FA120 vs-u5fh120fa120.pdf
VS-U5FH120FA120
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 60A SOT227
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 60A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 71 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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VS-U5FH300FA60 vs-u5fh300fa60.pdf
VS-U5FH300FA60
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 600V 150A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 76 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 226 Stücke:
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VS-U5FX60FA60 vs-u5fx60fa60.pdf
VS-U5FX60FA60
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SOT-227 - GEN5 FRED IN PARALLEL
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 30A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 57 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
auf Bestellung 160 Stücke:
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B380C800G-E4/51 800g.pdf
B380C800G-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 900MA WOG
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOG
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Average Rectified (Io): 900 mA
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: WOG
Technology: Standard
Operating Temperature: -40°C ~ 125°C (TJ)
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US1G-M3/5AT us1_test_dcicons.pdf
US1G-M3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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US1G-M3/5AT us1_test_dcicons.pdf
US1G-M3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 9825 Stücke:
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VS-10TQ035-M3 vs-10tq035-m3.pdf
VS-10TQ035-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
auf Bestellung 896 Stücke:
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VS-40EPF12-M3 vs-40epf-m3series.pdf
VS-40EPF12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 40A TO247AC
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 450 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 206 Stücke:
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VS-40EPF02-M3 vs-40epf0-m3series.pdf
VS-40EPF02-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 40A TO247AC
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 466 Stücke:
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VS-40EPF06-M3 vs-40epf0-m3series.pdf
VS-40EPF06-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 40A TO247AC
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC-2L
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 476 Stücke:
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2+12.38 EUR
25+6.71 EUR
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BZX55C11-TR bzx55.pdf
BZX55C11-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Qualification: AEC-Q101
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10000+0.17 EUR
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BZX55C11-TR bzx55.pdf
BZX55C11-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Qualification: AEC-Q101
auf Bestellung 30184 Stücke:
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24+0.9 EUR
38+0.56 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.24 EUR
2000+0.21 EUR
5000+0.18 EUR
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BZT52B15-HE3-08 bzt52.pdf
BZT52B15-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B15-HE3-08 bzt52.pdf
BZT52B15-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
auf Bestellung 2249 Stücke:
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AnzahlPrivatkunde
46+0.46 EUR
73+0.29 EUR
118+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
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BYG20GHE3_A/H byg20d.pdf
BYG20GHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
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1800+0.39 EUR
3600+0.36 EUR
5400+0.33 EUR
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BYG20GHE3_A/H byg20d.pdf
BYG20GHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8670 Stücke:
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AnzahlPrivatkunde
14+1.55 EUR
22+0.95 EUR
100+0.62 EUR
500+0.46 EUR
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BZX84C5V1-G3-08 bzx84-g_series.pdf
BZX84C5V1-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
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BZX84C5V1-G3-08 bzx84-g_series.pdf
BZX84C5V1-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 300MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 9661 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
61+0.35 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
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BZX85C3V0-TAP BZX85_Series.pdf
BZX85C3V0-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 1.3W DO204AL
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 2825 Stücke:
Lieferzeit 10-14 Tag (e)
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36+0.58 EUR
60+0.36 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.14 EUR
2000+0.13 EUR
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BZX85C3V0-TAP BZX85_Series.pdf
BZX85C3V0-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 1.3W DO204AL
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
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5000+0.099 EUR
10000+0.089 EUR
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VS-8ETH06FP-N3 vs-8eth06fp.pdf
VS-8ETH06FP-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO2202 FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 618 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.49 EUR
50+2.71 EUR
100+2.45 EUR
500+1.98 EUR
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RS07B-GS08 rs07b.pdf
RS07B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 100V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.24 EUR
6000+0.21 EUR
9000+0.2 EUR
15000+0.19 EUR
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RS07B-GS08 rs07b.pdf
RS07B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 100V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 26470 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
41+0.52 EUR
100+0.31 EUR
500+0.27 EUR
1000+0.25 EUR
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RS07K-M-08 rs07bm.pdf
RS07K-M-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 800V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.25 EUR
6000+0.23 EUR
Mindestbestellmenge: 3000 Stücke
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RS07K-M-08 rs07bm.pdf
RS07K-M-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 800V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 29472 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
31+0.68 EUR
100+0.52 EUR
500+0.4 EUR
1000+0.32 EUR
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RS07D-GS08 rs07b.pdf
RS07D-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 200V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
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RS07D-GS08 rs07b.pdf
RS07D-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 200V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 29457 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
41+0.51 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.25 EUR
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RS07J-GS18 rs07b.pdf
RS07J-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 600V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.24 EUR
Mindestbestellmenge: 10000 Stücke
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RS07J-GS18 rs07b.pdf
RS07J-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 600V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 19190 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
55+0.38 EUR
100+0.25 EUR
500+0.23 EUR
1000+0.2 EUR
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RS07K-GS18 rs07b.pdf
RS07K-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 800V 500MA DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.2 EUR
Mindestbestellmenge: 10000 Stücke
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RS07K-GS18 rs07b.pdf
RS07K-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 800V 500MA DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 48265 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.24 EUR
28+0.75 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.32 EUR
2000+0.3 EUR
5000+0.26 EUR
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RS07K-GS08 rs07b.pdf
RS07K-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 800V 500MA DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.27 EUR
6000+0.25 EUR
Mindestbestellmenge: 3000 Stücke
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RS07K-GS08 rs07b.pdf
RS07K-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 800V 500MA DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 7348 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.9 EUR
35+0.61 EUR
100+0.36 EUR
500+0.33 EUR
1000+0.31 EUR
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RS07K-HM3-08 rs07bm.pdf
RS07K-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 800V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
15000+0.12 EUR
30000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
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RS07K-HM3-08 rs07bm.pdf
RS07K-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 800V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 35539 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
76+0.27 EUR
105+0.2 EUR
500+0.18 EUR
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RS07D-HM3-08 rs07bm.pdf
RS07D-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 200V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
15000+0.11 EUR
21000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
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RS07D-HM3-08 rs07bm.pdf
RS07D-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 200V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 31486 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
67+0.31 EUR
103+0.2 EUR
500+0.18 EUR
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SMCJ5.0AHM3_A/H smcj.pdf
SMCJ5.0AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 163A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMCJ5.0AHM3_A/H smcj.pdf
SMCJ5.0AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 163A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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12+1.83 EUR
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VS-20TQ035SHM3 vs-20tq035shm3.pdf
VS-20TQ035SHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 20A TO263AB
Current - Reverse Leakage @ Vr: 2.7 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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VS-20TQ035STRRHM3 vs-20tq035shm3.pdf
VS-20TQ035STRRHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 20A TO263AB
Current - Reverse Leakage @ Vr: 2.7 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-20TQ035THN3 vs-20tq035thn3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 20A TO220AC
Current - Reverse Leakage @ Vr: 2.7 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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VS-20TQ035STRLHM3 vs-20tq035shm3.pdf
VS-20TQ035STRLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 20A TO263AB
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 2.7 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 35 V
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-20TQ035-M3 vs-20tq035-m3.pdf
VS-20TQ035-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 20A TO220AC
Current - Reverse Leakage @ Vr: 2.7 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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US1DHM3_A/H us1_test_dcicons.pdf
US1DHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZD27C43P-E3-08 bzd27series.pdf
BZD27C43P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
auf Bestellung 21000 Stücke:
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3000+0.29 EUR
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BZD27C43P-E3-08 bzd27series.pdf
BZD27C43P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
auf Bestellung 22887 Stücke:
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17+1.26 EUR
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BZD27C4V7P-E3-08 bzd27series.pdf
BZD27C4V7P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 800MW DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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BZD27C4V7P-E3-08 bzd27series.pdf
BZD27C4V7P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 800MW DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 23995 Stücke:
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BZD27C47P-E3-18 bzd27series.pdf
BZD27C47P-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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BZD27C47P-E3-18 bzd27series.pdf
BZD27C47P-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 49830 Stücke:
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28+0.77 EUR
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BZD27C47P-E3-08 bzd27series.pdf
BZD27C47P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
auf Bestellung 21000 Stücke:
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3000+0.29 EUR
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BZD27C47P-E3-08 bzd27series.pdf
BZD27C47P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
auf Bestellung 21960 Stücke:
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AnzahlPrivatkunde
17+1.26 EUR
27+0.79 EUR
100+0.5 EUR
500+0.38 EUR
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BZD27C4V3P-HE3-08 bzd27series.pdf
BZD27C4V3P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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3000+0.25 EUR
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BZD27C4V3P-HE3-08 bzd27series.pdf
BZD27C4V3P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 26222 Stücke:
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31+0.69 EUR
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BZD27C4V7P-HE3-08 bzd27series.pdf
BZD27C4V7P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 21000 Stücke:
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3000+0.23 EUR
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BZD27C4V7P-HE3-08 bzd27series.pdf
BZD27C4V7P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 25622 Stücke:
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AnzahlPrivatkunde
23+0.94 EUR
33+0.64 EUR
100+0.44 EUR
500+0.35 EUR
1000+0.31 EUR
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BZD27C4V7P-M3-08 BZD27-M_Series.pdf
BZD27C4V7P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 800MW DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
6000+0.17 EUR
9000+0.15 EUR
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BZD27C4V7P-M3-08 BZD27-M_Series.pdf
BZD27C4V7P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 800MW DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 53530 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
51+0.42 EUR
104+0.2 EUR
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