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BYM12-400-E3/97 BYM12-400-E3/97 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 4541 Stücke:
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22+0.81 EUR
33+0.54 EUR
100+0.36 EUR
500+0.28 EUR
1000+0.26 EUR
2000+0.23 EUR
Mindestbestellmenge: 22
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BYM12-300HE3_A/I Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 300V 1A DO213AB
Produkt ist nicht verfügbar
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BYM12-200HE3_A/H Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 200V 1A DO213AB
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BYM12-300HE3_A/H Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 300V 1A DO213AB
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BYM12-400HE3_A/I Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 400V 1A DO213AB
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BYM12-150HE3_A/I Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 150V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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BYM12-50HE3_A/I Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 50V 1A DO213AB
Produkt ist nicht verfügbar
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BYM12-150HE3_A/H Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 150V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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BYM12-50HE3_A/H Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 50V 1A DO213AB
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BYM12-200HE3_A/I Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 200V 1A DO213AB
Produkt ist nicht verfügbar
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BYM12-400HE3_A/H Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EGL41BHE3_A/I Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RGP10BE-E3/54 RGP10BE-E3/54 Vishay General Semiconductor - Diodes Division rgp10a.pdf Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 11000 Stücke:
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5500+0.25 EUR
11000+0.23 EUR
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RGP10BE-E3/54 RGP10BE-E3/54 Vishay General Semiconductor - Diodes Division rgp10a.pdf Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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23+0.79 EUR
28+0.63 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.29 EUR
2000+0.28 EUR
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VS-12CWQ10FNTRL-M3 VS-12CWQ10FNTRL-M3 Vishay General Semiconductor - Diodes Division 12cwq10f.pdf Description: DIODE ARRAY SCHOTT 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
auf Bestellung 3000 Stücke:
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3000+0.63 EUR
Mindestbestellmenge: 3000
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VS-12CWQ10FNTRL-M3 VS-12CWQ10FNTRL-M3 Vishay General Semiconductor - Diodes Division 12cwq10f.pdf Description: DIODE ARRAY SCHOTT 100V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
auf Bestellung 4284 Stücke:
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10+1.88 EUR
14+1.26 EUR
100+1.01 EUR
500+0.79 EUR
1000+0.70 EUR
Mindestbestellmenge: 10
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VS-E5PX6012LHN3 VS-E5PX6012LHN3 Vishay General Semiconductor - Diodes Division vs-e5px6012lhn3.pdf Description: DIODE GEN PURP 1.2KV 60A TO247AD
auf Bestellung 495 Stücke:
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3+8.48 EUR
10+7.62 EUR
100+6.25 EUR
Mindestbestellmenge: 3
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VX60100C-M3/P VX60100C-M3/P Vishay General Semiconductor - Diodes Division vx60100c.pdf Description: DIODE ARR SCHOT 100V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Current - Reverse Leakage @ Vr: 700 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 4970 Stücke:
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6+3.03 EUR
10+2.52 EUR
100+2.00 EUR
500+1.70 EUR
1000+1.44 EUR
2000+1.37 EUR
Mindestbestellmenge: 6
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P6SMB250A-M3/52 P6SMB250A-M3/52 Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 214VWM 344VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.74A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 879 Stücke:
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13+1.41 EUR
19+0.94 EUR
100+0.65 EUR
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P6SMB250A-M3/52 P6SMB250A-M3/52 Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 214VWM 344VC DO214AA
Packaging: Tape & Box (TB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.74A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 3750 Stücke:
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750+0.49 EUR
1500+0.45 EUR
2250+0.43 EUR
3750+0.41 EUR
Mindestbestellmenge: 750
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BZX384B16-E3-08 BZX384B16-E3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 16V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
auf Bestellung 9000 Stücke:
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3000+0.09 EUR
6000+0.08 EUR
Mindestbestellmenge: 3000
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BZX384B16-E3-08 BZX384B16-E3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 16V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
46+0.39 EUR
100+0.21 EUR
500+0.14 EUR
1000+0.09 EUR
Mindestbestellmenge: 38
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BZX384C8V2-HG3-08 BZX384C8V2-HG3-08 Vishay General Semiconductor - Diodes Division bzx384g.pdf Description: DIODE ZENER 8.2V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 700 mV
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.10 EUR
6000+0.09 EUR
9000+0.08 EUR
Mindestbestellmenge: 3000
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BZX384C8V2-HG3-08 BZX384C8V2-HG3-08 Vishay General Semiconductor - Diodes Division bzx384g.pdf Description: DIODE ZENER 8.2V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 700 mV
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14549 Stücke:
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53+0.33 EUR
79+0.23 EUR
162+0.11 EUR
Mindestbestellmenge: 53
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BZX384C13-E3-18 BZX384C13-E3-18 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 13V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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BZX384C13-E3-18 BZX384C13-E3-18 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 13V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
51+0.35 EUR
100+0.19 EUR
500+0.12 EUR
1000+0.08 EUR
2000+0.08 EUR
5000+0.07 EUR
Mindestbestellmenge: 42
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BZX384C75-HG3-08 BZX384C75-HG3-08 Vishay General Semiconductor - Diodes Division bzx384g.pdf Description: ZENER DIODE SOD3235%, 75V, 0.2W
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 700 mV
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.10 EUR
6000+0.09 EUR
9000+0.08 EUR
Mindestbestellmenge: 3000
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BZX384C75-HG3-08 BZX384C75-HG3-08 Vishay General Semiconductor - Diodes Division bzx384g.pdf Description: ZENER DIODE SOD3235%, 75V, 0.2W
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 700 mV
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14917 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.60 EUR
43+0.42 EUR
100+0.20 EUR
500+0.17 EUR
1000+0.12 EUR
Mindestbestellmenge: 30
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BZX384B11-E3-08 BZX384B11-E3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 11V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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BZX384B11-E3-08 BZX384B11-E3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 11V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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BZX384B11-E3-18 BZX384B11-E3-18 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 11V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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BZX384B11-E3-18 BZX384B11-E3-18 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 11V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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BZX384C12-G3-08 BZX384C12-G3-08 Vishay General Semiconductor - Diodes Division bzx384g.pdf Description: DIODE ZENER 12V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.08 EUR
6000+0.07 EUR
9000+0.07 EUR
15000+0.05 EUR
Mindestbestellmenge: 3000
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BZX384C12-G3-08 BZX384C12-G3-08 Vishay General Semiconductor - Diodes Division bzx384g.pdf Description: DIODE ZENER 12V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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202+0.09 EUR
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1000+0.08 EUR
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SB1H100-E3/54 SB1H100-E3/54 Vishay General Semiconductor - Diodes Division sb1h90.pdf Description: DIODE SCHOTTKY 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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5500+0.18 EUR
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SM15T22CAHM3_A/I SM15T22CAHM3_A/I Vishay General Semiconductor - Diodes Division sm15t.pdf Description: TVS DIODE 18.8VWM 30.6VC DO214AB
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SM15T22CAHM3_A/H SM15T22CAHM3_A/H Vishay General Semiconductor - Diodes Division sm15t.pdf Description: TVS DIODE 18.8VWM 30.6VC DO214AB
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SM15T22CAHE3_A/I Vishay General Semiconductor - Diodes Division sm15t.pdf Description: TVS DIODE 18.8VWM 30.6VC DO214AB
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SM15T22CAHM3/H SM15T22CAHM3/H Vishay General Semiconductor - Diodes Division sm15t.pdf Description: TVS DIODE 18.8VWM 30.6VC DO214AB
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SM15T22CAHE3_A/H Vishay General Semiconductor - Diodes Division sm15t.pdf Description: TVS DIODE 18.8VWM 30.6VC DO214AB
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SM15T22CAHM3/I SM15T22CAHM3/I Vishay General Semiconductor - Diodes Division sm15t.pdf Description: TVS DIODE 18.8VWM 30.6VC DO214AB
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MMSZ5232C-E3-08 MMSZ5232C-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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VS-12CWQ10FNHM3 VS-12CWQ10FNHM3 Vishay General Semiconductor - Diodes Division vs12cwq10f.pdf Description: DIODE ARRAY SCHOTT 100V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Qualification: AEC-Q101
auf Bestellung 2848 Stücke:
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150+1.99 EUR
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BZG03C150-M3-18 BZG03C150-M3-18 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 150V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Produkt ist nicht verfügbar
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BZG03C150-M3-18 BZG03C150-M3-18 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 150V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
auf Bestellung 5780 Stücke:
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SMAJ150CAHE3_A/H SMAJ150CAHE3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ150CAHM3_A/I SMAJ150CAHM3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B12-HE3-08 BZX84B12-HE3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 12V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B12-HE3-08 BZX84B12-HE3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 12V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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72+0.25 EUR
108+0.16 EUR
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ESH3DHE3_A/H ESH3DHE3_A/H Vishay General Semiconductor - Diodes Division esh3b.pdf Description: DIODE GEN PURP 200V 3A DO214AB
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850+0.70 EUR
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ESH3DHE3_A/H ESH3DHE3_A/H Vishay General Semiconductor - Diodes Division esh3b.pdf Description: DIODE GEN PURP 200V 3A DO214AB
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14+1.30 EUR
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ESH3D-E3/57T ESH3D-E3/57T Vishay General Semiconductor - Diodes Division esh3b.pdf Description: DIODE GEN PURP 200V 3A DO214AB
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ESH3D-E3/57T ESH3D-E3/57T Vishay General Semiconductor - Diodes Division esh3b.pdf Description: DIODE GEN PURP 200V 3A DO214AB
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VS-150KR20A VS-150KR20A Vishay General Semiconductor - Diodes Division 45L,R,%20150K,KS,R%20Series.pdf Description: DIODE STD REV 200V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 471 A
Current - Reverse Leakage @ Vr: 35 mA @ 200 V
Produkt ist nicht verfügbar
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VS-150U80D Vishay General Semiconductor - Diodes Division vs-150urseries.pdf Description: DIODE GEN PURP 800V 150A DO205AA
Packaging: Tube
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 600 A
auf Bestellung 23 Stücke:
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1+67.14 EUR
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VS-60EPU06-N3 VS-60EPU06-N3 Vishay General Semiconductor - Diodes Division vs-60epu06-n3.pdf Description: DIODE STANDARD 600V 60A TO247AC
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 81 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC-2L
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 830 Stücke:
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500+2.09 EUR
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GL41BHE3/96 GL41BHE3/96 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 1500 Stücke:
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1500+0.22 EUR
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GL41BHE3/96 GL41BHE3/96 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 4270 Stücke:
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GL41B/54 GL41B/54 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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VS-20CTH03-N3P VS-20CTH03-N3P Vishay General Semiconductor - Diodes Division packaging.pdf Description: DIODE ARRAY GP 300V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
Produkt ist nicht verfügbar
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BYM12-400-E3/97 egl41.pdf
BYM12-400-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 4541 Stücke:
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Anzahl Preis
22+0.81 EUR
33+0.54 EUR
100+0.36 EUR
500+0.28 EUR
1000+0.26 EUR
2000+0.23 EUR
Mindestbestellmenge: 22
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BYM12-300HE3_A/I egl41.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 1A DO213AB
Produkt ist nicht verfügbar
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BYM12-200HE3_A/H egl41.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
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BYM12-300HE3_A/H egl41.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 1A DO213AB
Produkt ist nicht verfügbar
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BYM12-400HE3_A/I egl41.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Produkt ist nicht verfügbar
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BYM12-150HE3_A/I egl41.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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BYM12-50HE3_A/I egl41.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Produkt ist nicht verfügbar
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BYM12-150HE3_A/H egl41.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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BYM12-50HE3_A/H egl41.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Produkt ist nicht verfügbar
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BYM12-200HE3_A/I egl41.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Produkt ist nicht verfügbar
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BYM12-400HE3_A/H egl41.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EGL41BHE3_A/I egl41.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RGP10BE-E3/54 rgp10a.pdf
RGP10BE-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5500+0.25 EUR
11000+0.23 EUR
Mindestbestellmenge: 5500
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RGP10BE-E3/54 rgp10a.pdf
RGP10BE-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
28+0.63 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.29 EUR
2000+0.28 EUR
Mindestbestellmenge: 23
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VS-12CWQ10FNTRL-M3 12cwq10f.pdf
VS-12CWQ10FNTRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.63 EUR
Mindestbestellmenge: 3000
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VS-12CWQ10FNTRL-M3 12cwq10f.pdf
VS-12CWQ10FNTRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 100V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
auf Bestellung 4284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
14+1.26 EUR
100+1.01 EUR
500+0.79 EUR
1000+0.70 EUR
Mindestbestellmenge: 10
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VS-E5PX6012LHN3 vs-e5px6012lhn3.pdf
VS-E5PX6012LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 60A TO247AD
auf Bestellung 495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.48 EUR
10+7.62 EUR
100+6.25 EUR
Mindestbestellmenge: 3
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VX60100C-M3/P vx60100c.pdf
VX60100C-M3/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Current - Reverse Leakage @ Vr: 700 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 4970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.03 EUR
10+2.52 EUR
100+2.00 EUR
500+1.70 EUR
1000+1.44 EUR
2000+1.37 EUR
Mindestbestellmenge: 6
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P6SMB250A-M3/52 p6smb.pdf
P6SMB250A-M3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 214VWM 344VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.74A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 879 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
19+0.94 EUR
100+0.65 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB250A-M3/52 p6smb.pdf
P6SMB250A-M3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 214VWM 344VC DO214AA
Packaging: Tape & Box (TB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.74A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 3750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+0.49 EUR
1500+0.45 EUR
2250+0.43 EUR
3750+0.41 EUR
Mindestbestellmenge: 750
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BZX384B16-E3-08 bzx384.pdf
BZX384B16-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
6000+0.08 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZX384B16-E3-08 bzx384.pdf
BZX384B16-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
46+0.39 EUR
100+0.21 EUR
500+0.14 EUR
1000+0.09 EUR
Mindestbestellmenge: 38
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BZX384C8V2-HG3-08 bzx384g.pdf
BZX384C8V2-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 700 mV
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.10 EUR
6000+0.09 EUR
9000+0.08 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZX384C8V2-HG3-08 bzx384g.pdf
BZX384C8V2-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 700 mV
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
79+0.23 EUR
162+0.11 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
BZX384C13-E3-18 bzx384.pdf
BZX384C13-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX384C13-E3-18 bzx384.pdf
BZX384C13-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
51+0.35 EUR
100+0.19 EUR
500+0.12 EUR
1000+0.08 EUR
2000+0.08 EUR
5000+0.07 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
BZX384C75-HG3-08 bzx384g.pdf
BZX384C75-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: ZENER DIODE SOD3235%, 75V, 0.2W
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 700 mV
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.10 EUR
6000+0.09 EUR
9000+0.08 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZX384C75-HG3-08 bzx384g.pdf
BZX384C75-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: ZENER DIODE SOD3235%, 75V, 0.2W
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 700 mV
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
43+0.42 EUR
100+0.20 EUR
500+0.17 EUR
1000+0.12 EUR
Mindestbestellmenge: 30
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BZX384B11-E3-08 bzx384.pdf
BZX384B11-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX384B11-E3-08 bzx384.pdf
BZX384B11-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX384B11-E3-18 bzx384.pdf
BZX384B11-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX384B11-E3-18 bzx384.pdf
BZX384B11-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX384C12-G3-08 bzx384g.pdf
BZX384C12-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
6000+0.07 EUR
9000+0.07 EUR
15000+0.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZX384C12-G3-08 bzx384g.pdf
BZX384C12-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 22808 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
98+0.18 EUR
202+0.09 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
SB1H100-E3/54 sb1h90.pdf
SB1H100-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5500+0.18 EUR
11000+0.16 EUR
Mindestbestellmenge: 5500
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SM15T22CAHM3_A/I sm15t.pdf
SM15T22CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SM15T22CAHM3_A/H sm15t.pdf
SM15T22CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SM15T22CAHE3_A/I sm15t.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SM15T22CAHM3/H sm15t.pdf
SM15T22CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SM15T22CAHE3_A/H sm15t.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SM15T22CAHM3/I sm15t.pdf
SM15T22CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Produkt ist nicht verfügbar
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MMSZ5232C-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5232C-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
auf Bestellung 27005 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
93+0.19 EUR
183+0.10 EUR
500+0.09 EUR
1000+0.09 EUR
Mindestbestellmenge: 63
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VS-12CWQ10FNHM3 vs12cwq10f.pdf
VS-12CWQ10FNHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 100V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Qualification: AEC-Q101
auf Bestellung 2848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
75+2.03 EUR
150+1.99 EUR
525+1.84 EUR
1050+1.76 EUR
2025+1.68 EUR
Mindestbestellmenge: 4
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BZG03C150-M3-18 bzg03c-m-series.pdf
BZG03C150-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 150V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Produkt ist nicht verfügbar
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BZG03C150-M3-18 bzg03c-m-series.pdf
BZG03C150-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 150V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
auf Bestellung 5780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
29+0.63 EUR
100+0.30 EUR
500+0.28 EUR
1000+0.26 EUR
Mindestbestellmenge: 22
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SMAJ150CAHE3_A/H smaj50a.pdf
SMAJ150CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ150CAHM3_A/I smaj50a.pdf
SMAJ150CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B12-HE3-08 bzx84_series.pdf
BZX84B12-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B12-HE3-08 bzx84_series.pdf
BZX84B12-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
108+0.16 EUR
Mindestbestellmenge: 72
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ESH3DHE3_A/H esh3b.pdf
ESH3DHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
850+0.70 EUR
1700+0.56 EUR
Mindestbestellmenge: 850
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ESH3DHE3_A/H esh3b.pdf
ESH3DHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
auf Bestellung 2147 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.30 EUR
16+1.15 EUR
100+0.88 EUR
Mindestbestellmenge: 14
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ESH3D-E3/57T esh3b.pdf
ESH3D-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
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ESH3D-E3/57T esh3b.pdf
ESH3D-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
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VS-150KR20A 45L,R,%20150K,KS,R%20Series.pdf
VS-150KR20A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD REV 200V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 471 A
Current - Reverse Leakage @ Vr: 35 mA @ 200 V
Produkt ist nicht verfügbar
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VS-150U80D vs-150urseries.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 150A DO205AA
Packaging: Tube
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 600 A
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+67.14 EUR
10+62.65 EUR
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VS-60EPU06-N3 vs-60epu06-n3.pdf
VS-60EPU06-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 60A TO247AC
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 81 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC-2L
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 830 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.61 EUR
25+3.16 EUR
100+2.57 EUR
500+2.09 EUR
Mindestbestellmenge: 4
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GL41BHE3/96 bym10-xxx.pdf
GL41BHE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.22 EUR
Mindestbestellmenge: 1500
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GL41BHE3/96 bym10-xxx.pdf
GL41BHE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 4270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
30+0.59 EUR
100+0.35 EUR
500+0.33 EUR
Mindestbestellmenge: 24
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GL41B/54 bym10-xxx.pdf
GL41B/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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VS-20CTH03-N3P packaging.pdf
VS-20CTH03-N3P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
Produkt ist nicht verfügbar
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