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SE70PGHM3_A/H SE70PGHM3_A/H Vishay General Semiconductor - Diodes Division se70pb.pdf Description: DIODE GEN PURP 400V 2.9A TO277A
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SE70PGHM3_A/H SE70PGHM3_A/H Vishay General Semiconductor - Diodes Division se70pb.pdf Description: DIODE GEN PURP 400V 2.9A TO277A
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VS-30CPU04-N3 VS-30CPU04-N3 Vishay General Semiconductor - Diodes Division vs-30cpu04p.pdf Description: DIODE ARRAY GP 400V 15A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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BAT54W-HG3-18 BAT54W-HG3-18 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 200MA SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
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BAT54W-HG3-18 BAT54W-HG3-18 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 200MA SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
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BAT54W-HG3-08 BAT54W-HG3-08 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 200MA SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
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BAT54W-HG3-08 BAT54W-HG3-08 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 200MA SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
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VS-VSKDS409/150 VS-VSKDS409/150 Vishay General Semiconductor - Diodes Division vs-vskds409.pdf Description: DIODE MOD SCHOTTKY 150V ADDAPAK
Current - Reverse Leakage @ Vr: 6 mA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.03 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ADD-A-PAK®
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ADD-A-PAK (3)
Packaging: Bulk
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VS-VSKCS409/150 VS-VSKCS409/150 Vishay General Semiconductor - Diodes Division vs-vskcs409.pdf Description: DIODE MOD SCHOTTKY 150V ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.03 V @ 200 A
Current - Reverse Leakage @ Vr: 6 mA @ 150 V
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VS-HFA08TB60HN3 VS-HFA08TB60HN3 Vishay General Semiconductor - Diodes Division vs-hfa08tb60hn3.pdf Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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2KBP005M-E4/72 2KBP005M-E4/72 Vishay General Semiconductor - Diodes Division 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf Description: BRIDGE RECT 1PHASE 50V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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BZX55B3V3-TR BZX55B3V3-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 3.3V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
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BZX55B3V3-TR BZX55B3V3-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 3.3V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
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VS-40CPQ060HN3 VS-40CPQ060HN3 Vishay General Semiconductor - Diodes Division vs-40cpq060hn3.pdf Description: DIODE ARR SCHOTT 60V 40A TO247AC
Current - Reverse Leakage @ Vr: 1.7 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Qualification: AEC-Q101
Grade: Automotive
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1.5SMC43CAHM3/I 1.5SMC43CAHM3/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 36.8VWM 59.3VC DO214AB
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1.5SMC43CAHM3/H 1.5SMC43CAHM3/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 36.8VWM 59.3VC DO214AB
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1.5SMC75CAHE3_A/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 64.1VWM 104VC SMC
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1.5SMC75CAHM3_A/I 1.5SMC75CAHM3_A/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 64.1VWM 104VC DO214AB
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1.5SMC75CAHM3/H 1.5SMC75CAHM3/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 64.1VWM 104VC DO214AB
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1.5SMC75CAHE3_A/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 64.1VWM 104VC SMC
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1.5SMC75CAHM3/I 1.5SMC75CAHM3/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 64.1VWM 104VC DO214AB
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1.5SMC75CAHM3_A/H 1.5SMC75CAHM3_A/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 64.1VWM 104VC DO214AB
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BZG05C5V6-M3-18 BZG05C5V6-M3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 5.6V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±7.14%
Packaging: Tape & Reel (TR)
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BZG05C5V6-M3-18 BZG05C5V6-M3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 5.6V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±7.14%
Packaging: Cut Tape (CT)
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BZG05C12-HM3-08 BZG05C12-HM3-08 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 12V 1.25W DO214AC
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.42%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Qualification: AEC-Q101
Grade: Automotive
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 12 V
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BZG05C12-HM3-08 BZG05C12-HM3-08 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 12V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.42%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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BZG05C91-HM3-08 BZG05C91-HM3-08 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 91V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 68 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
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BZG05C91-HM3-08 BZG05C91-HM3-08 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 91V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 68 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Cut Tape (CT)
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BZG05C3V3-HM3-18 BZG05C3V3-HM3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 3.3V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 40 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BZG05C3V3-HM3-18 BZG05C3V3-HM3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 3.3V 1.25W DO214AC
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 40 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 20 Ohms
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SSC53LHE3_A/H SSC53LHE3_A/H Vishay General Semiconductor - Diodes Division ssc53l.pdf Description: DIODE SCHOTTKY 30V 5A DO214AB
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SSC53LHE3_A/H SSC53LHE3_A/H Vishay General Semiconductor - Diodes Division ssc53l.pdf Description: DIODE SCHOTTKY 30V 5A DO214AB
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SSC53L-M3/57T SSC53L-M3/57T Vishay General Semiconductor - Diodes Division ssc53l.pdf Description: DIODE SCHOTTKY 30V 5A DO214AB
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SSC53L-M3/57T SSC53L-M3/57T Vishay General Semiconductor - Diodes Division ssc53l.pdf Description: DIODE SCHOTTKY 30V 5A DO214AB
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SB550/54 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 50V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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VS-T110HF120 VS-T110HF120 Vishay General Semiconductor - Diodes Division vst40hfseries.pdf Description: DIODE GEN PURP 1.2KV 110A D-55
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: D-55
Current - Average Rectified (Io): 110A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Packaging: Bulk
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VS-T110HF60 VS-T110HF60 Vishay General Semiconductor - Diodes Division vst40hfseries.pdf Description: DIODE GEN PURP 600V 110A D-55
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: D-55
Current - Average Rectified (Io): 110A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Packaging: Bulk
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BZD27C12P-HE3-08 BZD27C12P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 12V 800MW DO219AB
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Qualification: AEC-Q101
Grade: Automotive
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BZD27C12P-HE3-08 BZD27C12P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 12V 800MW DO219AB
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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1N5224B-T 1N5224B-T Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 2.8V 500MW DO35
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VS-15ETU12-M3 VS-15ETU12-M3 Vishay General Semiconductor - Diodes Division vs-15etu12-m3.pdf Description: DIODE STANDARD 1200V 15A TO220AC
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.78 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 167 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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VS-15ETU12HN3 Vishay General Semiconductor - Diodes Division vs-15etu12hn3.pdf Description: DIODE STANDARD 1200V 15A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.78 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 167 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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VS-15ETU12-N3 Vishay General Semiconductor - Diodes Division VS-15ETU12-N3.pdf Description: DIODE GEN PURP 1.2KV 15A TO220AC
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.78 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 167 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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V8PM45-M3/I V8PM45-M3/I Vishay General Semiconductor - Diodes Division v8pm45.pdf Description: DIODE SCHOTTKY 45V 8A TO277A
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 1450pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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V8PM45HM3/I V8PM45HM3/I Vishay General Semiconductor - Diodes Division v8pm45.pdf Description: DIODE SCHOTTKY 45V 8A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 1450pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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EGL41D-E3/97 EGL41D-E3/97 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE STANDARD 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM12-200-E3/97 BYM12-200-E3/97 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE STANDARD 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BYM12-200-E3/97 BYM12-200-E3/97 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE STANDARD 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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EGL41C-E3/96 EGL41C-E3/96 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 150V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EGL41C-E3/96 EGL41C-E3/96 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 150V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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RGL41B-E3/96 RGL41B-E3/96 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 100V 1A DO213AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
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RGL41B-E3/96 RGL41B-E3/96 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 100V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM11-200-E3/97 BYM11-200-E3/97 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 200V 1A DO213AB
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
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BYM11-200-E3/97 BYM11-200-E3/97 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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RGL41A-E3/96 RGL41A-E3/96 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 50V 1A DO213AB
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
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RGL41A-E3/96 RGL41A-E3/96 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 50V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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P6KE100A-E3/54 P6KE100A-E3/54 Vishay General Semiconductor - Diodes Division p6ke.pdf Description: TVS DIODE 85.5VWM 137V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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P6KE100A-E3/54 P6KE100A-E3/54 Vishay General Semiconductor - Diodes Division p6ke.pdf Description: TVS DIODE 85.5VWM 137V DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ7.5A/54 SMBJ7.5A/54 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 7.5VWM 12.9VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 46.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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SMBJ7.5AHM3_A/I SMBJ7.5AHM3_A/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 7.5VWM 12.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SE70PGHM3_A/H se70pb.pdf
SE70PGHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2.9A TO277A
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1500+0.88 EUR
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SE70PGHM3_A/H se70pb.pdf
SE70PGHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2.9A TO277A
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VS-30CPU04-N3 vs-30cpu04p.pdf
VS-30CPU04-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V 15A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 10526 Stücke:
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BAT54W-HG3-18
BAT54W-HG3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BAT54W-HG3-18
BAT54W-HG3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BAT54W-HG3-08
BAT54W-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
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3000+0.087 EUR
6000+0.08 EUR
9000+0.067 EUR
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BAT54W-HG3-08
BAT54W-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
auf Bestellung 12080 Stücke:
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60+0.36 EUR
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VS-VSKDS409/150 vs-vskds409.pdf
VS-VSKDS409/150
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SCHOTTKY 150V ADDAPAK
Current - Reverse Leakage @ Vr: 6 mA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.03 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ADD-A-PAK®
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ADD-A-PAK (3)
Packaging: Bulk
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VS-VSKCS409/150 vs-vskcs409.pdf
VS-VSKCS409/150
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SCHOTTKY 150V ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.03 V @ 200 A
Current - Reverse Leakage @ Vr: 6 mA @ 150 V
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10+121.31 EUR
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VS-HFA08TB60HN3 vs-hfa08tb60hn3.pdf
VS-HFA08TB60HN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1037 Stücke:
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3+7.39 EUR
10+4.84 EUR
100+3.39 EUR
500+2.77 EUR
1000+2.58 EUR
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2KBP005M-E4/72 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf
2KBP005M-E4/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
Produkt ist nicht verfügbar
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BZX55B3V3-TR bzx55.pdf
BZX55B3V3-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
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10000+0.17 EUR
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BZX55B3V3-TR bzx55.pdf
BZX55B3V3-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15200 Stücke:
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112+0.19 EUR
127+0.17 EUR
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VS-40CPQ060HN3 vs-40cpq060hn3.pdf
VS-40CPQ060HN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 40A TO247AC
Current - Reverse Leakage @ Vr: 1.7 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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1.5SMC43CAHM3/I 15smc.pdf
1.5SMC43CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36.8VWM 59.3VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC43CAHM3/H 15smc.pdf
1.5SMC43CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36.8VWM 59.3VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC75CAHE3_A/H 15smc.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64.1VWM 104VC SMC
Produkt ist nicht verfügbar
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1.5SMC75CAHM3_A/I 15smc.pdf
1.5SMC75CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64.1VWM 104VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC75CAHM3/H 15smc.pdf
1.5SMC75CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64.1VWM 104VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC75CAHE3_A/I 15smc.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64.1VWM 104VC SMC
Produkt ist nicht verfügbar
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1.5SMC75CAHM3/I 15smc.pdf
1.5SMC75CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64.1VWM 104VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC75CAHM3_A/H 15smc.pdf
1.5SMC75CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64.1VWM 104VC DO214AB
Produkt ist nicht verfügbar
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BZG05C5V6-M3-18 bzg05c-m-series.pdf
BZG05C5V6-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±7.14%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZG05C5V6-M3-18 bzg05c-m-series.pdf
BZG05C5V6-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±7.14%
Packaging: Cut Tape (CT)
auf Bestellung 2960 Stücke:
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28+0.77 EUR
41+0.52 EUR
100+0.27 EUR
500+0.24 EUR
1000+0.2 EUR
2000+0.19 EUR
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BZG05C12-HM3-08 bzg05c-m-series.pdf
BZG05C12-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.25W DO214AC
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.42%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Qualification: AEC-Q101
Grade: Automotive
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 12 V
auf Bestellung 10500 Stücke:
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1500+0.27 EUR
3000+0.25 EUR
4500+0.19 EUR
7500+0.18 EUR
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BZG05C12-HM3-08 bzg05c-m-series.pdf
BZG05C12-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.42%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 11014 Stücke:
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26+0.82 EUR
38+0.56 EUR
100+0.38 EUR
500+0.3 EUR
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BZG05C91-HM3-08 bzg05c-m-series.pdf
BZG05C91-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 91V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 68 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Produkt ist nicht verfügbar
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BZG05C91-HM3-08 bzg05c-m-series.pdf
BZG05C91-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 91V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 68 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Cut Tape (CT)
auf Bestellung 942 Stücke:
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AnzahlPrivatkunde
25+0.83 EUR
33+0.64 EUR
100+0.38 EUR
500+0.36 EUR
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BZG05C3V3-HM3-18 bzg05c-m-series.pdf
BZG05C3V3-HM3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 40 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BZG05C3V3-HM3-18 bzg05c-m-series.pdf
BZG05C3V3-HM3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 1.25W DO214AC
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 40 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 20 Ohms
auf Bestellung 3840 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
38+0.56 EUR
100+0.38 EUR
500+0.3 EUR
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SSC53LHE3_A/H ssc53l.pdf
SSC53LHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A DO214AB
auf Bestellung 850 Stücke:
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AnzahlPrivatkunde
850+0.83 EUR
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SSC53LHE3_A/H ssc53l.pdf
SSC53LHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A DO214AB
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.57 EUR
16+1.38 EUR
100+1.06 EUR
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SSC53L-M3/57T ssc53l.pdf
SSC53L-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A DO214AB
Produkt ist nicht verfügbar
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SSC53L-M3/57T ssc53l.pdf
SSC53L-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A DO214AB
Produkt ist nicht verfügbar
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SB550/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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VS-T110HF120 vst40hfseries.pdf
VS-T110HF120
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 110A D-55
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: D-55
Current - Average Rectified (Io): 110A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Packaging: Bulk
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VS-T110HF60 vst40hfseries.pdf
VS-T110HF60
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 110A D-55
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: D-55
Current - Average Rectified (Io): 110A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Packaging: Bulk
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BZD27C12P-HE3-08 bzd27series.pdf
BZD27C12P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 800MW DO219AB
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 21000 Stücke:
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3000+0.29 EUR
6000+0.26 EUR
9000+0.25 EUR
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BZD27C12P-HE3-08 bzd27series.pdf
BZD27C12P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 800MW DO219AB
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 22628 Stücke:
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17+1.24 EUR
28+0.76 EUR
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1N5224B-T 1n5221.pdf
1N5224B-T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.8V 500MW DO35
Produkt ist nicht verfügbar
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VS-15ETU12-M3 vs-15etu12-m3.pdf
VS-15ETU12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 15A TO220AC
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.78 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 167 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 6520 Stücke:
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8+2.67 EUR
50+1.23 EUR
100+1.12 EUR
500+1.08 EUR
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VS-15ETU12HN3 vs-15etu12hn3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 15A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.78 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 167 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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VS-15ETU12-N3 VS-15ETU12-N3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 15A TO220AC
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.78 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 167 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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V8PM45-M3/I v8pm45.pdf
V8PM45-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 8A TO277A
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 1450pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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V8PM45HM3/I v8pm45.pdf
V8PM45HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 8A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 1450pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EGL41D-E3/97 egl41.pdf
EGL41D-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 5388 Stücke:
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20+1.07 EUR
32+0.67 EUR
100+0.54 EUR
500+0.43 EUR
1000+0.36 EUR
2000+0.35 EUR
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BYM12-200-E3/97 egl41.pdf
BYM12-200-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BYM12-200-E3/97 egl41.pdf
BYM12-200-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 3595 Stücke:
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24+0.88 EUR
36+0.6 EUR
100+0.48 EUR
500+0.36 EUR
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EGL41C-E3/96 egl41.pdf
EGL41C-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EGL41C-E3/96 egl41.pdf
EGL41C-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 1490 Stücke:
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22+0.96 EUR
28+0.75 EUR
100+0.45 EUR
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RGL41B-E3/96 bym1150.pdf
RGL41B-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
auf Bestellung 3000 Stücke:
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1500+0.19 EUR
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RGL41B-E3/96 bym1150.pdf
RGL41B-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 3354 Stücke:
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24+0.88 EUR
31+0.68 EUR
100+0.4 EUR
500+0.38 EUR
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BYM11-200-E3/97 bym1150.pdf
BYM11-200-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.24 EUR
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BYM11-200-E3/97 bym1150.pdf
BYM11-200-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 5720 Stücke:
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23+0.92 EUR
30+0.7 EUR
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500+0.39 EUR
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RGL41A-E3/96 bym1150.pdf
RGL41A-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
auf Bestellung 7500 Stücke:
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AnzahlPrivatkunde
1500+0.26 EUR
3000+0.24 EUR
7500+0.23 EUR
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RGL41A-E3/96 bym1150.pdf
RGL41A-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 8220 Stücke:
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24+0.88 EUR
31+0.68 EUR
100+0.4 EUR
500+0.38 EUR
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P6KE100A-E3/54 p6ke.pdf
P6KE100A-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 85.5VWM 137V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 4000 Stücke:
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AnzahlPrivatkunde
4000+0.4 EUR
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P6KE100A-E3/54 p6ke.pdf
P6KE100A-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 85.5VWM 137V DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 4026 Stücke:
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AnzahlPrivatkunde
13+1.71 EUR
20+1.07 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
2000+0.44 EUR
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SMBJ7.5A/54 smbj.pdf
SMBJ7.5A/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.5VWM 12.9VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 46.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SMBJ7.5AHM3_A/I smbj.pdf
SMBJ7.5AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.5VWM 12.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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