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1.5SMC43CAHM3/I 1.5SMC43CAHM3/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 36.8VWM 59.3VC DO214AB
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1.5SMC43CAHM3/H 1.5SMC43CAHM3/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 36.8VWM 59.3VC DO214AB
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1.5SMC75CAHE3_A/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 64.1VWM 104VC SMC
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1.5SMC75CAHM3_A/I 1.5SMC75CAHM3_A/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 64.1VWM 104VC DO214AB
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1.5SMC75CAHM3/H 1.5SMC75CAHM3/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 64.1VWM 104VC DO214AB
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1.5SMC75CAHE3_A/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 64.1VWM 104VC SMC
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1.5SMC75CAHM3/I 1.5SMC75CAHM3/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 64.1VWM 104VC DO214AB
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1.5SMC75CAHM3_A/H 1.5SMC75CAHM3_A/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 64.1VWM 104VC DO214AB
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BZG05C5V6-M3-18 BZG05C5V6-M3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 5.6V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±7.14%
Packaging: Tape & Reel (TR)
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BZG05C5V6-M3-18 BZG05C5V6-M3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 5.6V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±7.14%
Packaging: Cut Tape (CT)
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BZG05C12-HM3-08 BZG05C12-HM3-08 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 12V 1.25W DO214AC
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.42%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Qualification: AEC-Q101
Grade: Automotive
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 12 V
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BZG05C12-HM3-08 BZG05C12-HM3-08 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 12V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.42%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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BZG05C91-HM3-08 BZG05C91-HM3-08 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 91V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 68 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
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BZG05C91-HM3-08 BZG05C91-HM3-08 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 91V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 68 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Cut Tape (CT)
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BZG05C3V3-HM3-18 BZG05C3V3-HM3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 3.3V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 40 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BZG05C3V3-HM3-18 BZG05C3V3-HM3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 3.3V 1.25W DO214AC
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 40 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 20 Ohms
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SSC53LHE3_A/H SSC53LHE3_A/H Vishay General Semiconductor - Diodes Division ssc53l.pdf Description: DIODE SCHOTTKY 30V 5A DO214AB
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SSC53LHE3_A/H SSC53LHE3_A/H Vishay General Semiconductor - Diodes Division ssc53l.pdf Description: DIODE SCHOTTKY 30V 5A DO214AB
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SSC53L-M3/57T SSC53L-M3/57T Vishay General Semiconductor - Diodes Division ssc53l.pdf Description: DIODE SCHOTTKY 30V 5A DO214AB
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SSC53L-M3/57T SSC53L-M3/57T Vishay General Semiconductor - Diodes Division ssc53l.pdf Description: DIODE SCHOTTKY 30V 5A DO214AB
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SB550/54 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 50V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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VS-T110HF120 VS-T110HF120 Vishay General Semiconductor - Diodes Division vst40hfseries.pdf Description: DIODE GEN PURP 1.2KV 110A D-55
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: D-55
Current - Average Rectified (Io): 110A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Packaging: Bulk
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VS-T110HF60 VS-T110HF60 Vishay General Semiconductor - Diodes Division vst40hfseries.pdf Description: DIODE GEN PURP 600V 110A D-55
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: D-55
Current - Average Rectified (Io): 110A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Packaging: Bulk
auf Bestellung 8 Stücke:
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BZD27C12P-HE3-08 BZD27C12P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 12V 800MW DO219AB
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Qualification: AEC-Q101
Grade: Automotive
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BZD27C12P-HE3-08 BZD27C12P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 12V 800MW DO219AB
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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1N5224B-T 1N5224B-T Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 2.8V 500MW DO35
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VS-15ETU12-M3 VS-15ETU12-M3 Vishay General Semiconductor - Diodes Division vs-15etu12-m3.pdf Description: DIODE STANDARD 1200V 15A TO220AC
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.78 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 167 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 6520 Stücke:
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50+1.03 EUR
100+0.94 EUR
500+0.91 EUR
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VS-15ETU12HN3 Vishay General Semiconductor - Diodes Division vs-15etu12hn3.pdf Description: DIODE STANDARD 1200V 15A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.78 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 167 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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VS-15ETU12-N3 Vishay General Semiconductor - Diodes Division VS-15ETU12-N3.pdf Description: DIODE GEN PURP 1.2KV 15A TO220AC
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.78 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 167 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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V8PM45-M3/I V8PM45-M3/I Vishay General Semiconductor - Diodes Division v8pm45.pdf Description: DIODE SCHOTTKY 45V 8A TO277A
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 1450pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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V8PM45HM3/I V8PM45HM3/I Vishay General Semiconductor - Diodes Division v8pm45.pdf Description: DIODE SCHOTTKY 45V 8A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 1450pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EGL41D-E3/97 EGL41D-E3/97 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE STANDARD 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 5388 Stücke:
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20+0.9 EUR
32+0.56 EUR
100+0.45 EUR
500+0.36 EUR
1000+0.3 EUR
2000+0.29 EUR
Mindestbestellmenge: 20
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BYM12-200-E3/97 BYM12-200-E3/97 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE STANDARD 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BYM12-200-E3/97 BYM12-200-E3/97 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE STANDARD 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 3595 Stücke:
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24+0.74 EUR
36+0.5 EUR
100+0.4 EUR
500+0.3 EUR
1000+0.26 EUR
2000+0.24 EUR
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EGL41C-E3/96 EGL41C-E3/96 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 150V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EGL41C-E3/96 EGL41C-E3/96 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 150V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 1490 Stücke:
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RGL41B-E3/96 RGL41B-E3/96 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 100V 1A DO213AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
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RGL41B-E3/96 RGL41B-E3/96 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 100V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM11-200-E3/97 BYM11-200-E3/97 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 200V 1A DO213AB
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
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BYM11-200-E3/97 BYM11-200-E3/97 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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RGL41A-E3/96 RGL41A-E3/96 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 50V 1A DO213AB
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
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RGL41A-E3/96 RGL41A-E3/96 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 50V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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P6KE100A-E3/54 P6KE100A-E3/54 Vishay General Semiconductor - Diodes Division p6ke.pdf Description: TVS DIODE 85.5VWM 137V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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P6KE100A-E3/54 P6KE100A-E3/54 Vishay General Semiconductor - Diodes Division p6ke.pdf Description: TVS DIODE 85.5VWM 137V DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ7.5A/54 SMBJ7.5A/54 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 7.5VWM 12.9VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 46.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SMBJ7.5AHM3_A/I SMBJ7.5AHM3_A/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 7.5VWM 12.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ7.5AHM3_A/H SMBJ7.5AHM3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 7.5VWM 12.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-MBR6045WT-N3 VS-MBR6045WT-N3 Vishay General Semiconductor - Diodes Division vs-mbr6045wt-n3.pdf Description: DIODE ARR SCHOTT 45V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 76 Stücke:
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S07M-M-08 S07M-M-08 Vishay General Semiconductor - Diodes Division s07bm.pdf Description: DIODE GEN PURP 1KV 700MA DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 18000 Stücke:
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S07M-M-08 S07M-M-08 Vishay General Semiconductor - Diodes Division s07bm.pdf Description: DIODE GEN PURP 1KV 700MA DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 20024 Stücke:
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500+0.25 EUR
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TZX27B-TAP TZX27B-TAP Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 27V 500MW DO204AH
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
auf Bestellung 16696 Stücke:
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TZX27B-TAP TZX27B-TAP Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 27V 500MW DO204AH
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
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TZX27A-TR TZX27A-TR Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 27V 500MW DO35
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 20000 Stücke:
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TZX27A-TR TZX27A-TR Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 27V 500MW DO35
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
auf Bestellung 27500 Stücke:
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VS-50WQ10FNTRR-M3 VS-50WQ10FNTRR-M3 Vishay General Semiconductor - Diodes Division vs-50wq10fn.pdf Description: DIODE SCHOTTKY 100V 5.5A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 183pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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VS-50WQ10FNTRR-M3 VS-50WQ10FNTRR-M3 Vishay General Semiconductor - Diodes Division vs-50wq10fn.pdf Description: DIODE SCHOTTKY 100V 5.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 183pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
auf Bestellung 994 Stücke:
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DGP15-E3/54 DGP15-E3/54 Vishay General Semiconductor - Diodes Division cgp15.pdf Description: DIODE GP 1.5KV 1.5A DO204AC
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1500 V
Operating Temperature - Junction: -65°C ~ 175°C
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4000+0.43 EUR
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DGP15-E3/54 DGP15-E3/54 Vishay General Semiconductor - Diodes Division cgp15.pdf Description: DIODE GP 1.5KV 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1500 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
auf Bestellung 7838 Stücke:
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12+1.48 EUR
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500+0.54 EUR
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ZMM5254B-13 Vishay General Semiconductor - Diodes Division ZMM5221B%20thru%20ZMM5267B.pdf Description: DIODE ZENER 27V 500MW MINI MELF
Produkt ist nicht verfügbar
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ZMM5254B-7 Vishay General Semiconductor - Diodes Division ZMM5221B%20thru%20ZMM5267B.pdf Description: DIODE ZENER 27V 500MW MINI MELF
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 41 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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1.5SMC43CAHM3/I 15smc.pdf
1.5SMC43CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36.8VWM 59.3VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC43CAHM3/H 15smc.pdf
1.5SMC43CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36.8VWM 59.3VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC75CAHE3_A/H 15smc.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64.1VWM 104VC SMC
Produkt ist nicht verfügbar
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1.5SMC75CAHM3_A/I 15smc.pdf
1.5SMC75CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64.1VWM 104VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC75CAHM3/H 15smc.pdf
1.5SMC75CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64.1VWM 104VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC75CAHE3_A/I 15smc.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64.1VWM 104VC SMC
Produkt ist nicht verfügbar
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1.5SMC75CAHM3/I 15smc.pdf
1.5SMC75CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64.1VWM 104VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC75CAHM3_A/H 15smc.pdf
1.5SMC75CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64.1VWM 104VC DO214AB
Produkt ist nicht verfügbar
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BZG05C5V6-M3-18 bzg05c-m-series.pdf
BZG05C5V6-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±7.14%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZG05C5V6-M3-18 bzg05c-m-series.pdf
BZG05C5V6-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±7.14%
Packaging: Cut Tape (CT)
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
41+0.44 EUR
100+0.23 EUR
500+0.2 EUR
1000+0.17 EUR
2000+0.16 EUR
Mindestbestellmenge: 28
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BZG05C12-HM3-08 bzg05c-m-series.pdf
BZG05C12-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.25W DO214AC
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.42%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Qualification: AEC-Q101
Grade: Automotive
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 12 V
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.23 EUR
3000+0.21 EUR
4500+0.16 EUR
7500+0.15 EUR
Mindestbestellmenge: 1500
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BZG05C12-HM3-08 bzg05c-m-series.pdf
BZG05C12-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.42%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 11014 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
38+0.47 EUR
100+0.32 EUR
500+0.25 EUR
Mindestbestellmenge: 26
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BZG05C91-HM3-08 bzg05c-m-series.pdf
BZG05C91-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 91V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 68 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Produkt ist nicht verfügbar
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BZG05C91-HM3-08 bzg05c-m-series.pdf
BZG05C91-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 91V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 68 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Cut Tape (CT)
auf Bestellung 942 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
33+0.54 EUR
100+0.32 EUR
500+0.3 EUR
Mindestbestellmenge: 25
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BZG05C3V3-HM3-18 bzg05c-m-series.pdf
BZG05C3V3-HM3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 40 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BZG05C3V3-HM3-18 bzg05c-m-series.pdf
BZG05C3V3-HM3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 1.25W DO214AC
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 40 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 20 Ohms
auf Bestellung 3840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
38+0.47 EUR
100+0.32 EUR
500+0.25 EUR
1000+0.2 EUR
Mindestbestellmenge: 26
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SSC53LHE3_A/H ssc53l.pdf
SSC53LHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A DO214AB
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
850+0.7 EUR
Mindestbestellmenge: 850
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SSC53LHE3_A/H ssc53l.pdf
SSC53LHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A DO214AB
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
16+1.16 EUR
100+0.89 EUR
Mindestbestellmenge: 14
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SSC53L-M3/57T ssc53l.pdf
SSC53L-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A DO214AB
Produkt ist nicht verfügbar
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SSC53L-M3/57T ssc53l.pdf
SSC53L-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A DO214AB
Produkt ist nicht verfügbar
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SB550/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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VS-T110HF120 vst40hfseries.pdf
VS-T110HF120
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 110A D-55
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: D-55
Current - Average Rectified (Io): 110A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Packaging: Bulk
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+59.33 EUR
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VS-T110HF60 vst40hfseries.pdf
VS-T110HF60
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 110A D-55
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: D-55
Current - Average Rectified (Io): 110A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Packaging: Bulk
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+58.41 EUR
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BZD27C12P-HE3-08 bzd27series.pdf
BZD27C12P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 800MW DO219AB
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.22 EUR
9000+0.21 EUR
15000+0.2 EUR
21000+0.19 EUR
Mindestbestellmenge: 3000
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BZD27C12P-HE3-08 bzd27series.pdf
BZD27C12P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 800MW DO219AB
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 22628 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
28+0.64 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 17
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1N5224B-T 1n5221.pdf
1N5224B-T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.8V 500MW DO35
Produkt ist nicht verfügbar
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VS-15ETU12-M3 vs-15etu12-m3.pdf
VS-15ETU12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 15A TO220AC
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.78 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 167 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 6520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
50+1.03 EUR
100+0.94 EUR
500+0.91 EUR
Mindestbestellmenge: 8
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VS-15ETU12HN3 vs-15etu12hn3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 15A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.78 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 167 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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VS-15ETU12-N3 VS-15ETU12-N3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 15A TO220AC
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.78 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 167 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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V8PM45-M3/I v8pm45.pdf
V8PM45-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 8A TO277A
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 1450pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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V8PM45HM3/I v8pm45.pdf
V8PM45HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 8A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 1450pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EGL41D-E3/97 egl41.pdf
EGL41D-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 5388 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
32+0.56 EUR
100+0.45 EUR
500+0.36 EUR
1000+0.3 EUR
2000+0.29 EUR
Mindestbestellmenge: 20
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BYM12-200-E3/97 egl41.pdf
BYM12-200-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BYM12-200-E3/97 egl41.pdf
BYM12-200-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 3595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
36+0.5 EUR
100+0.4 EUR
500+0.3 EUR
1000+0.26 EUR
2000+0.24 EUR
Mindestbestellmenge: 24
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EGL41C-E3/96 egl41.pdf
EGL41C-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EGL41C-E3/96 egl41.pdf
EGL41C-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
28+0.63 EUR
100+0.38 EUR
500+0.35 EUR
Mindestbestellmenge: 22
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RGL41B-E3/96 bym1150.pdf
RGL41B-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.16 EUR
Mindestbestellmenge: 1500
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RGL41B-E3/96 bym1150.pdf
RGL41B-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 3354 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
31+0.57 EUR
100+0.34 EUR
500+0.32 EUR
Mindestbestellmenge: 24
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BYM11-200-E3/97 bym1150.pdf
BYM11-200-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.2 EUR
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BYM11-200-E3/97 bym1150.pdf
BYM11-200-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 5720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
30+0.59 EUR
100+0.35 EUR
500+0.33 EUR
1000+0.22 EUR
2000+0.21 EUR
Mindestbestellmenge: 23
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RGL41A-E3/96 bym1150.pdf
RGL41A-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.22 EUR
3000+0.2 EUR
7500+0.19 EUR
Mindestbestellmenge: 1500
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RGL41A-E3/96 bym1150.pdf
RGL41A-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 8220 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
31+0.57 EUR
100+0.34 EUR
500+0.32 EUR
Mindestbestellmenge: 24
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P6KE100A-E3/54 p6ke.pdf
P6KE100A-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 85.5VWM 137V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.33 EUR
Mindestbestellmenge: 4000
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P6KE100A-E3/54 p6ke.pdf
P6KE100A-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 85.5VWM 137V DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 4046 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
20+0.9 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.4 EUR
2000+0.37 EUR
Mindestbestellmenge: 13
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SMBJ7.5A/54 smbj.pdf
SMBJ7.5A/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.5VWM 12.9VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 46.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SMBJ7.5AHM3_A/I smbj.pdf
SMBJ7.5AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.5VWM 12.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ7.5AHM3_A/H smbj.pdf
SMBJ7.5AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.5VWM 12.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-MBR6045WT-N3 vs-mbr6045wt-n3.pdf
VS-MBR6045WT-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.61 EUR
25+5.59 EUR
Mindestbestellmenge: 2
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S07M-M-08 s07bm.pdf
S07M-M-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 700MA DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
6000+0.15 EUR
9000+0.14 EUR
Mindestbestellmenge: 3000
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S07M-M-08 s07bm.pdf
S07M-M-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 700MA DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 20024 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
39+0.45 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.17 EUR
Mindestbestellmenge: 31
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TZX27B-TAP tzxserie.pdf
TZX27B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 500MW DO204AH
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
auf Bestellung 16696 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
132+0.13 EUR
354+0.05 EUR
500+0.048 EUR
1000+0.047 EUR
2000+0.046 EUR
5000+0.045 EUR
Mindestbestellmenge: 91
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TZX27B-TAP tzxserie.pdf
TZX27B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 500MW DO204AH
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.033 EUR
Mindestbestellmenge: 10000
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TZX27A-TR tzxserie.pdf
TZX27A-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 500MW DO35
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.048 EUR
Mindestbestellmenge: 10000
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TZX27A-TR tzxserie.pdf
TZX27A-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 500MW DO35
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
70+0.25 EUR
144+0.12 EUR
500+0.1 EUR
1000+0.071 EUR
2000+0.062 EUR
5000+0.057 EUR
Mindestbestellmenge: 48
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VS-50WQ10FNTRR-M3 vs-50wq10fn.pdf
VS-50WQ10FNTRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 5.5A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 183pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
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VS-50WQ10FNTRR-M3 vs-50wq10fn.pdf
VS-50WQ10FNTRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 5.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 183pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
auf Bestellung 994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.71 EUR
11+1.72 EUR
100+1.15 EUR
500+0.9 EUR
Mindestbestellmenge: 7
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DGP15-E3/54 cgp15.pdf
DGP15-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.5KV 1.5A DO204AC
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1500 V
Operating Temperature - Junction: -65°C ~ 175°C
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.43 EUR
Mindestbestellmenge: 4000
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DGP15-E3/54 cgp15.pdf
DGP15-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.5KV 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1500 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
auf Bestellung 7838 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
18+0.99 EUR
100+0.68 EUR
500+0.54 EUR
1000+0.5 EUR
2000+0.46 EUR
Mindestbestellmenge: 12
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ZMM5254B-13 ZMM5221B%20thru%20ZMM5267B.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 500MW MINI MELF
Produkt ist nicht verfügbar
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ZMM5254B-7 ZMM5221B%20thru%20ZMM5267B.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 500MW MINI MELF
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 41 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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