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MBRB16H45HE3_B/P MBRB16H45HE3_B/P Vishay General Semiconductor - Diodes Division MBR(F,B)16H35 - 16H60.pdf Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H60HE3_B/P MBRB16H60HE3_B/P Vishay General Semiconductor - Diodes Division mbrb16h35_45_60.pdf Description: DIODE SCHOTTKY 60V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H35HE3_B/I MBRB16H35HE3_B/I Vishay General Semiconductor - Diodes Division MBR(F,B)16H35 - 16H60.pdf Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H45HE3_B/I MBRB16H45HE3_B/I Vishay General Semiconductor - Diodes Division MBR(F,B)16H35 - 16H60.pdf Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H60HE3_B/I MBRB16H60HE3_B/I Vishay General Semiconductor - Diodes Division mbrb16h35_45_60.pdf Description: DIODE SCHOTTKY 60V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB30H45CTHE3_B/I MBRB30H45CTHE3_B/I Vishay General Semiconductor - Diodes Division mbr30h100ct.pdf Description: DIODE ARR SCHOTT 45V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
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800+2.03 EUR
1600+1.72 EUR
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MBRB30H45CTHE3_B/I MBRB30H45CTHE3_B/I Vishay General Semiconductor - Diodes Division mbr30h100ct.pdf Description: DIODE ARR SCHOTT 45V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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5+3.63 EUR
10+3.01 EUR
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Mindestbestellmenge: 5
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MBRB745-E3/45 MBRB745-E3/45 Vishay General Semiconductor - Diodes Division mbr7xx.pdf Description: DIODE SCHOTTKY 45V 7.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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6DFN51A-M3/I 6DFN51A-M3/I Vishay General Semiconductor - Diodes Division 6dfn12athru6dfn51a.pdf Description: 600W,51V 5%, DFN3820A TVS
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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6DFN51A-M3/I 6DFN51A-M3/I Vishay General Semiconductor - Diodes Division 6dfn12athru6dfn51a.pdf Description: 600W,51V 5%, DFN3820A TVS
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
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500+0.27 EUR
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5000+0.16 EUR
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ES1BHM3_A/H ES1BHM3_A/H Vishay General Semiconductor - Diodes Division es1.pdf Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES1BHM3_A/I ES1BHM3_A/I Vishay General Semiconductor - Diodes Division es1.pdf Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P4SMA10AHE3_A/I P4SMA10AHE3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMA10AHM3_A/H P4SMA10AHM3_A/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMA10AHM3_A/I P4SMA10AHM3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMBZ5930B-E3/52 SMBZ5930B-E3/52 Vishay General Semiconductor - Diodes Division smbz5945b.pdf Description: DIODE ZENER 16V 3W DO214AA
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
auf Bestellung 4108 Stücke:
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GF1A-E3/67A GF1A-E3/67A Vishay General Semiconductor - Diodes Division gf1x.pdf Description: DIODE STANDARD 50V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 3000 Stücke:
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V8PAM12HM3/I Vishay General Semiconductor - Diodes Division v8pam12.pdf Description: DIODE SCHOTTKY 120V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 730pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8PAM12HM3/I Vishay General Semiconductor - Diodes Division v8pam12.pdf Description: DIODE SCHOTTKY 120V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 730pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 12227 Stücke:
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500+0.43 EUR
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V8PA6HM3/I Vishay General Semiconductor - Diodes Division v8pa6.pdf Description: DIODE SCHOTTKY 60V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1030pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8PA6HM3/I Vishay General Semiconductor - Diodes Division v8pa6.pdf Description: DIODE SCHOTTKY 60V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1030pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2555 Stücke:
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17+1.06 EUR
25+0.72 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.36 EUR
2000+0.35 EUR
Mindestbestellmenge: 17
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V8PAM10-M3/I Vishay General Semiconductor - Diodes Division v8pam10.pdf Description: DIODE SCHOTTKY 100V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 810pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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V8PA12HM3/I Vishay General Semiconductor - Diodes Division v8pa12.pdf Description: DIODE SCHOTTKY 120V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 700pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 13840 Stücke:
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17+1.07 EUR
26+0.69 EUR
100+0.56 EUR
500+0.43 EUR
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V8PA22-M3/I V8PA22-M3/I Vishay General Semiconductor - Diodes Division v8pa22.pdf Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8PA22HM3/H V8PA22HM3/H Vishay General Semiconductor - Diodes Division v8pa22.pdf Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C75-E3-08 BZT52C75-E3-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 75V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Produkt ist nicht verfügbar
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BZT52C75-E3-08 BZT52C75-E3-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 75V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
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BZT55C75-GS08 BZT55C75-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 75V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Grade: Automotive
Qualification: AEC-Q101
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BZT55C75-GS08 BZT55C75-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 75V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Grade: Automotive
Qualification: AEC-Q101
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V20K170-M3/H V20K170-M3/H Vishay General Semiconductor - Diodes Division v20k170.pdf Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Grade: Automotive
Qualification: AEC-Q101
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V20K170-M3/H V20K170-M3/H Vishay General Semiconductor - Diodes Division v20k170.pdf Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Grade: Automotive
Qualification: AEC-Q101
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V20K170HM3/I V20K170HM3/I Vishay General Semiconductor - Diodes Division v20k170.pdf Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Grade: Automotive
Qualification: AEC-Q101
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V20K170-M3/I V20K170-M3/I Vishay General Semiconductor - Diodes Division v20k170.pdf Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS170WS-G3-18 BAS170WS-G3-18 Vishay General Semiconductor - Diodes Division bas170ws-g.pdf Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Produkt ist nicht verfügbar
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BAS170WS-G3-18 BAS170WS-G3-18 Vishay General Semiconductor - Diodes Division bas170ws-g.pdf Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
auf Bestellung 9735 Stücke:
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1.5KE43AHE3_B/C 1.5KE43AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 36.8VWM 59.3VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MBRF30H45CTHE3_A/P MBRF30H45CTHE3_A/P Vishay General Semiconductor - Diodes Division mbrb30hxxct.pdf Description: DIODE ARR SCHOT 45V 15A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S10CMHM3/I Vishay General Semiconductor - Diodes Division s10cgjkm.pdf Description: DIODE STANDARD 1000V 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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S10CMHM3/I Vishay General Semiconductor - Diodes Division s10cgjkm.pdf Description: DIODE STANDARD 1000V 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 8040 Stücke:
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1.5KE27CAHE3_B/C 1.5KE27CAHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 23.1VWM 37.5VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 42A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C10-HE3_A-18 BZX84C10-HE3_A-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 10V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C10-HE3_A-08 BZX84C10-HE3_A-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 10V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VESD05A5A-HSF-GS08 VESD05A5A-HSF-GS08 Vishay General Semiconductor - Diodes Division vesd05a5.pdf Description: TVS DIODE 5VWM 13VC LLP75-6L
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
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VESD05A5A-HSF-GS08 VESD05A5A-HSF-GS08 Vishay General Semiconductor - Diodes Division vesd05a5.pdf Description: TVS DIODE 5VWM 13VC LLP75-6L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
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VESD05A6A-HAF-GS08 VESD05A6A-HAF-GS08 Vishay General Semiconductor - Diodes Division vesd05a6.pdf Description: TVS DIODE 5VWM 13VC LLP75-7L
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP75-7L
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
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3000+0.28 EUR
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VESD05A6A-HAF-GS08 VESD05A6A-HAF-GS08 Vishay General Semiconductor - Diodes Division vesd05a6.pdf Description: TVS DIODE 5VWM 13VC LLP75-7L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP75-7L
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
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VESD05A8C-HNH-GS08 VESD05A8C-HNH-GS08 Vishay General Semiconductor - Diodes Division vesd05a8.pdf Description: TVS DIODE 5VWM 13VC LLP1713-9L
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP1713-9L
Unidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
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VESD05A8C-HNH-GS08 VESD05A8C-HNH-GS08 Vishay General Semiconductor - Diodes Division vesd05a8.pdf Description: TVS DIODE 5VWM 13VC LLP1713-9L
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP1713-9L
Unidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
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VESD05A8B-HNH-GS08 VESD05A8B-HNH-GS08 Vishay General Semiconductor - Diodes Division vesd05a8.pdf Description: TVS DIODE 5VWM 13VC LLP1713-9L
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 20pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1713-9L
Unidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 52W
Power Line Protection: No
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3000+0.31 EUR
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VESD05A8B-HNH-GS08 VESD05A8B-HNH-GS08 Vishay General Semiconductor - Diodes Division vesd05a8.pdf Description: TVS DIODE 5VWM 13VC LLP1713-9L
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 20pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1713-9L
Unidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 52W
Power Line Protection: No
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FESB16CT-E3/81 FESB16CT-E3/81 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 150V 16A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
auf Bestellung 794 Stücke:
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BZG04-180-HM3-08 BZG04-180-HM3-08 Vishay General Semiconductor - Diodes Division bzg04-m-series.pdf Description: DIODE ZENER 220V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 220 V
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 180 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZG04-180-HM3-08 BZG04-180-HM3-08 Vishay General Semiconductor - Diodes Division bzg04-m-series.pdf Description: DIODE ZENER 220V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 220 V
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 180 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5501 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
25+0.72 EUR
100+0.49 EUR
500+0.39 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
BYS459B-1500E3/81 Vishay General Semiconductor - Diodes Division BYS459B,F-1500.pdf Description: DIODE GP 1.5KV 6.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Technology: Standard
Current - Average Rectified (Io): 6.5A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1500 V
Produkt ist nicht verfügbar
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BYS459B-1500SE3/81 Vishay General Semiconductor - Diodes Division BYS459(B,F)-1500S.pdf Description: DIODE GEN PURP 1.5KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYS459B-1500E3/45 Vishay General Semiconductor - Diodes Division BYS459B,F-1500.pdf Description: DIODE GP 1.5KV 6.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Technology: Standard
Current - Average Rectified (Io): 6.5A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYS459B-1500SE3/45 Vishay General Semiconductor - Diodes Division BYS459(B,F)-1500S.pdf Description: DIODE GEN PURP 1.5KV 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1500 V
Produkt ist nicht verfügbar
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MMSZ5250B-HE3_A-18 MMSZ5250B-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 20V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5250B-HE3_A-08 MMSZ5250B-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 20V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5250C-HE3_A-08 MMSZ5250C-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 20V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H45HE3_B/P MBR(F,B)16H35 - 16H60.pdf
MBRB16H45HE3_B/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H60HE3_B/P mbrb16h35_45_60.pdf
MBRB16H60HE3_B/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H35HE3_B/I MBR(F,B)16H35 - 16H60.pdf
MBRB16H35HE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H45HE3_B/I MBR(F,B)16H35 - 16H60.pdf
MBRB16H45HE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H60HE3_B/I mbrb16h35_45_60.pdf
MBRB16H60HE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB30H45CTHE3_B/I mbr30h100ct.pdf
MBRB30H45CTHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.03 EUR
1600+1.72 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
MBRB30H45CTHE3_B/I mbr30h100ct.pdf
MBRB30H45CTHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+3.01 EUR
100+2.4 EUR
Mindestbestellmenge: 5
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MBRB745-E3/45 mbr7xx.pdf
MBRB745-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 7.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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6DFN51A-M3/I 6dfn12athru6dfn51a.pdf
6DFN51A-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,51V 5%, DFN3820A TVS
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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6DFN51A-M3/I 6dfn12athru6dfn51a.pdf
6DFN51A-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,51V 5%, DFN3820A TVS
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 13920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
37+0.48 EUR
100+0.29 EUR
500+0.27 EUR
1000+0.18 EUR
2000+0.17 EUR
5000+0.16 EUR
Mindestbestellmenge: 29
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ES1BHM3_A/H es1.pdf
ES1BHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES1BHM3_A/I es1.pdf
ES1BHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P4SMA10AHE3_A/I p4sma.pdf
P4SMA10AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMA10AHM3_A/H p4sma.pdf
P4SMA10AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMA10AHM3_A/I p4sma.pdf
P4SMA10AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMBZ5930B-E3/52 smbz5945b.pdf
SMBZ5930B-E3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 3W DO214AA
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
auf Bestellung 4108 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
27+0.68 EUR
100+0.43 EUR
Mindestbestellmenge: 17
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GF1A-E3/67A gf1x.pdf
GF1A-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.23 EUR
Mindestbestellmenge: 1500
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V8PAM12HM3/I v8pam12.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 730pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8PAM12HM3/I v8pam12.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 730pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 12227 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
26+0.69 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.35 EUR
5000+0.31 EUR
Mindestbestellmenge: 17
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V8PA6HM3/I v8pa6.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1030pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8PA6HM3/I v8pa6.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1030pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2555 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
25+0.72 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.36 EUR
2000+0.35 EUR
Mindestbestellmenge: 17
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V8PAM10-M3/I v8pam10.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 810pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
auf Bestellung 10382 Stücke:
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Anzahl Preis
16+1.11 EUR
24+0.76 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.35 EUR
2000+0.34 EUR
5000+0.3 EUR
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V8PA12HM3/I v8pa12.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 700pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 13840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
26+0.69 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.35 EUR
2000+0.33 EUR
5000+0.31 EUR
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V8PA22-M3/I v8pa22.pdf
V8PA22-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8PA22HM3/H v8pa22.pdf
V8PA22HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C75-E3-08 bzt52_series.pdf
BZT52C75-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Produkt ist nicht verfügbar
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BZT52C75-E3-08 bzt52_series.pdf
BZT52C75-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
auf Bestellung 14919 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
59+0.3 EUR
119+0.15 EUR
500+0.12 EUR
1000+0.086 EUR
Mindestbestellmenge: 39
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BZT55C75-GS08 bzt55.pdf
BZT55C75-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.064 EUR
5000+0.057 EUR
7500+0.053 EUR
Mindestbestellmenge: 2500
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BZT55C75-GS08 bzt55.pdf
BZT55C75-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
125+0.14 EUR
259+0.068 EUR
500+0.067 EUR
1000+0.065 EUR
Mindestbestellmenge: 84
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V20K170-M3/H v20k170.pdf
V20K170-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.71 EUR
3000+0.67 EUR
Mindestbestellmenge: 1500
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V20K170-M3/H v20k170.pdf
V20K170-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.64 EUR
14+1.33 EUR
100+1.03 EUR
500+0.88 EUR
Mindestbestellmenge: 11
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V20K170HM3/I v20k170.pdf
V20K170HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V20K170-M3/I v20k170.pdf
V20K170-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS170WS-G3-18 bas170ws-g.pdf
BAS170WS-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Produkt ist nicht verfügbar
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BAS170WS-G3-18 bas170ws-g.pdf
BAS170WS-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
auf Bestellung 9735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
68+0.26 EUR
100+0.19 EUR
500+0.15 EUR
1000+0.12 EUR
5000+0.11 EUR
Mindestbestellmenge: 46
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1.5KE43AHE3_B/C 15ke.pdf
1.5KE43AHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36.8VWM 59.3VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRF30H45CTHE3_A/P mbrb30hxxct.pdf
MBRF30H45CTHE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 15A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S10CMHM3/I s10cgjkm.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.53 EUR
7000+0.49 EUR
Mindestbestellmenge: 3500
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S10CMHM3/I s10cgjkm.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 8040 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
16+1.11 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 11
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1.5KE27CAHE3_B/C 15ke.pdf
1.5KE27CAHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 42A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C10-HE3_A-18 bzx84_series.pdf
BZX84C10-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C10-HE3_A-08 bzx84_series.pdf
BZX84C10-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VESD05A5A-HSF-GS08 vesd05a5.pdf
VESD05A5A-HSF-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 13VC LLP75-6L
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.3 EUR
6000+0.28 EUR
9000+0.26 EUR
Mindestbestellmenge: 3000
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VESD05A5A-HSF-GS08 vesd05a5.pdf
VESD05A5A-HSF-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 13VC LLP75-6L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
auf Bestellung 13731 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
28+0.65 EUR
100+0.44 EUR
500+0.35 EUR
1000+0.31 EUR
Mindestbestellmenge: 22
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VESD05A6A-HAF-GS08 vesd05a6.pdf
VESD05A6A-HAF-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 13VC LLP75-7L
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP75-7L
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.28 EUR
6000+0.26 EUR
9000+0.25 EUR
Mindestbestellmenge: 3000
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VESD05A6A-HAF-GS08 vesd05a6.pdf
VESD05A6A-HAF-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 13VC LLP75-7L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP75-7L
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
auf Bestellung 11832 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
27+0.65 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.32 EUR
Mindestbestellmenge: 18
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VESD05A8C-HNH-GS08 vesd05a8.pdf
VESD05A8C-HNH-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 13VC LLP1713-9L
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP1713-9L
Unidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.31 EUR
6000+0.29 EUR
9000+0.27 EUR
Mindestbestellmenge: 3000
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VESD05A8C-HNH-GS08 vesd05a8.pdf
VESD05A8C-HNH-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 13VC LLP1713-9L
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP1713-9L
Unidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
25+0.72 EUR
100+0.49 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 17
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VESD05A8B-HNH-GS08 vesd05a8.pdf
VESD05A8B-HNH-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 13VC LLP1713-9L
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 20pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1713-9L
Unidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 52W
Power Line Protection: No
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.31 EUR
6000+0.29 EUR
9000+0.27 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
VESD05A8B-HNH-GS08 vesd05a8.pdf
VESD05A8B-HNH-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 13VC LLP1713-9L
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 20pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1713-9L
Unidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 52W
Power Line Protection: No
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
25+0.72 EUR
100+0.49 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 17
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FESB16CT-E3/81 fes16jt.pdf
FESB16CT-E3/81
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 16A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
auf Bestellung 794 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.66 EUR
10+2.21 EUR
100+1.76 EUR
Mindestbestellmenge: 7
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BZG04-180-HM3-08 bzg04-m-series.pdf
BZG04-180-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 220V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 220 V
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 180 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZG04-180-HM3-08 bzg04-m-series.pdf
BZG04-180-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 220V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 220 V
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 180 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5501 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
25+0.72 EUR
100+0.49 EUR
500+0.39 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
BYS459B-1500E3/81 BYS459B,F-1500.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.5KV 6.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Technology: Standard
Current - Average Rectified (Io): 6.5A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1500 V
Produkt ist nicht verfügbar
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BYS459B-1500SE3/81 BYS459(B,F)-1500S.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.5KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1500 V
Produkt ist nicht verfügbar
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BYS459B-1500E3/45 BYS459B,F-1500.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.5KV 6.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Technology: Standard
Current - Average Rectified (Io): 6.5A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYS459B-1500SE3/45 BYS459(B,F)-1500S.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.5KV 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1500 V
Produkt ist nicht verfügbar
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MMSZ5250B-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5250B-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5250B-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5250B-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5250C-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5250C-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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