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SMBJ3V3HM3_B/I SMBJ3V3HM3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 3.3VWM 7.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 5200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 7.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ3V3HM3_B/H SMBJ3V3HM3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 3.3VWM 7.3VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 5200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 7.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SD101AWS-HE3-18 SD101AWS-HE3-18 Vishay General Semiconductor - Diodes Division sd101aws_sd101bws_sd101cws.pdf Description: DIODE SCHOTTKY 60V 30MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Qualification: AEC-Q101
auf Bestellung 9604 Stücke:
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76+0.23 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
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5000+0.096 EUR
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1.5KE10CAHE3_B/C 1.5KE10CAHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 8.5VWM 14.5VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 108A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA110AHE3_A/H P4SMA110AHE3_A/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 94VWM 152VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6880 Stücke:
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P4SMA510AHM3_B/H P4SMA510AHM3_B/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 434VWM 698VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 430mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA110AHE3_A/I P4SMA110AHE3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 94VWM 152VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B5V1-G3-08 BZX84B5V1-G3-08 Vishay General Semiconductor - Diodes Division bzx84-g_series.pdf Description: DIODE ZENER 5.1V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
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BZX84B5V1-G3-08 BZX84B5V1-G3-08 Vishay General Semiconductor - Diodes Division bzx84-g_series.pdf Description: DIODE ZENER 5.1V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
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BZT52B5V1-HE3-18 BZT52B5V1-HE3-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 5.1V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
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BZT52B5V1-HE3-18 BZT52B5V1-HE3-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 5.1V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
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BZM55B5V1-TR3 BZM55B5V1-TR3 Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 5.1V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
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BZM55B5V1-TR3 BZM55B5V1-TR3 Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 5.1V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
auf Bestellung 9900 Stücke:
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BZM55B15-TR BZM55B15-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 15V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
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BZM55B15-TR BZM55B15-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 15V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
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BZM55B12-TR BZM55B12-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 12V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Qualification: AEC-Q101
auf Bestellung 17500 Stücke:
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BZM55B12-TR BZM55B12-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 12V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Qualification: AEC-Q101
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P6SMB33AHE3_B/I P6SMB33AHE3_B/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB33AHM3_B/I P6SMB33AHM3_B/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB33AHE3_B/H P6SMB33AHE3_B/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB33AHM3_B/H P6SMB33AHM3_B/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZX84C4V3-HE3_A-18 BZX84C4V3-HE3_A-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 4.3V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
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BZX84C4V3-HE3_A-08 BZX84C4V3-HE3_A-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 4.3V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
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1.5KE82AHE3_B/C 1.5KE82AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 70.1VWM 113VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.9A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MBRB1635HE3_B/P MBRB1635HE3_B/P Vishay General Semiconductor - Diodes Division mbrf16xx.pdf Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Qualification: AEC-Q101
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MBRB1635HE3_B/I MBRB1635HE3_B/I Vishay General Semiconductor - Diodes Division mbrf16xx.pdf Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Qualification: AEC-Q101
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MBRB16H35HE3_B/P MBRB16H35HE3_B/P Vishay General Semiconductor - Diodes Division MBR(F,B)16H35 - 16H60.pdf Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Qualification: AEC-Q101
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MBRB16H45HE3_B/P MBRB16H45HE3_B/P Vishay General Semiconductor - Diodes Division MBR(F,B)16H35 - 16H60.pdf Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H60HE3_B/P MBRB16H60HE3_B/P Vishay General Semiconductor - Diodes Division mbrb16h35_45_60.pdf Description: DIODE SCHOTTKY 60V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H35HE3_B/I MBRB16H35HE3_B/I Vishay General Semiconductor - Diodes Division MBR(F,B)16H35 - 16H60.pdf Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H45HE3_B/I MBRB16H45HE3_B/I Vishay General Semiconductor - Diodes Division MBR(F,B)16H35 - 16H60.pdf Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H60HE3_B/I MBRB16H60HE3_B/I Vishay General Semiconductor - Diodes Division mbrb16h35_45_60.pdf Description: DIODE SCHOTTKY 60V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB30H45CTHE3_B/I MBRB30H45CTHE3_B/I Vishay General Semiconductor - Diodes Division mbr30h100ct.pdf Description: DIODE ARR SCHOTT 45V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Qualification: AEC-Q101
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800+2.03 EUR
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MBRB30H45CTHE3_B/I MBRB30H45CTHE3_B/I Vishay General Semiconductor - Diodes Division mbr30h100ct.pdf Description: DIODE ARR SCHOTT 45V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Qualification: AEC-Q101
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MBRB745-E3/45 MBRB745-E3/45 Vishay General Semiconductor - Diodes Division mbr7xx.pdf Description: DIODE SCHOTTKY 45V 7.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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6DFN51A-M3/I 6DFN51A-M3/I Vishay General Semiconductor - Diodes Division 6dfn12athru6dfn51a.pdf Description: 600W,51V 5%, DFN3820A TVS
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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6DFN51A-M3/I 6DFN51A-M3/I Vishay General Semiconductor - Diodes Division 6dfn12athru6dfn51a.pdf Description: 600W,51V 5%, DFN3820A TVS
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
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ES1BHM3_A/H ES1BHM3_A/H Vishay General Semiconductor - Diodes Division es1.pdf Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES1BHM3_A/I ES1BHM3_A/I Vishay General Semiconductor - Diodes Division es1.pdf Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P4SMA10AHE3_A/I P4SMA10AHE3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMA10AHM3_A/H P4SMA10AHM3_A/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMA10AHM3_A/I P4SMA10AHM3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMBZ5930B-E3/52 SMBZ5930B-E3/52 Vishay General Semiconductor - Diodes Division smbz5945b.pdf Description: DIODE ZENER 16V 3W DO214AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
auf Bestellung 4108 Stücke:
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GF1A-E3/67A GF1A-E3/67A Vishay General Semiconductor - Diodes Division gf1x.pdf Description: DIODE STANDARD 50V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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V8PAM12HM3/I Vishay General Semiconductor - Diodes Division v8pam12.pdf Description: DIODE SCHOTTKY 120V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 730pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8PAM12HM3/I Vishay General Semiconductor - Diodes Division v8pam12.pdf Description: DIODE SCHOTTKY 120V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 730pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
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V8PA6HM3/I Vishay General Semiconductor - Diodes Division v8pa6.pdf Description: DIODE SCHOTTKY 60V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1030pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8PA6HM3/I Vishay General Semiconductor - Diodes Division v8pa6.pdf Description: DIODE SCHOTTKY 60V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1030pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 2555 Stücke:
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17+1.06 EUR
25+0.72 EUR
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V8PAM10-M3/I Vishay General Semiconductor - Diodes Division v8pam10.pdf Description: DIODE SCHOTTKY 100V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 810pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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V8PA12HM3/I Vishay General Semiconductor - Diodes Division v8pa12.pdf Description: DIODE SCHOTTKY 120V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 700pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 120 V
Qualification: AEC-Q101
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V8PA22-M3/I V8PA22-M3/I Vishay General Semiconductor - Diodes Division v8pa22.pdf Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8PA22HM3/H V8PA22HM3/H Vishay General Semiconductor - Diodes Division v8pa22.pdf Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C75-E3-08 BZT52C75-E3-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 75V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Produkt ist nicht verfügbar
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BZT52C75-E3-08 BZT52C75-E3-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 75V 410MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
auf Bestellung 14919 Stücke:
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39+0.46 EUR
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BZT55C75-GS08 BZT55C75-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 75V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Qualification: AEC-Q101
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BZT55C75-GS08 BZT55C75-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 75V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Qualification: AEC-Q101
auf Bestellung 9794 Stücke:
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V20K170-M3/H V20K170-M3/H Vishay General Semiconductor - Diodes Division v20k170.pdf Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Qualification: AEC-Q101
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V20K170-M3/H V20K170-M3/H Vishay General Semiconductor - Diodes Division v20k170.pdf Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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V20K170HM3/I V20K170HM3/I Vishay General Semiconductor - Diodes Division v20k170.pdf Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Qualification: AEC-Q101
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V20K170-M3/I V20K170-M3/I Vishay General Semiconductor - Diodes Division v20k170.pdf Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ3V3HM3_B/I smbj.pdf
SMBJ3V3HM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 7.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 5200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 7.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ3V3HM3_B/H smbj.pdf
SMBJ3V3HM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 7.3VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 5200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 7.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SD101AWS-HE3-18 sd101aws_sd101bws_sd101cws.pdf
SD101AWS-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 30MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Qualification: AEC-Q101
auf Bestellung 9604 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
76+0.23 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
5000+0.096 EUR
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1.5KE10CAHE3_B/C 15ke.pdf
1.5KE10CAHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.5VWM 14.5VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 108A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P4SMA110AHE3_A/H p4sma.pdf
P4SMA110AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 94VWM 152VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6880 Stücke:
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Anzahl Preis
18+1.02 EUR
29+0.63 EUR
100+0.4 EUR
500+0.31 EUR
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P4SMA510AHM3_B/H p4sma.pdf
P4SMA510AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 434VWM 698VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 430mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
24+0.74 EUR
100+0.51 EUR
500+0.4 EUR
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P4SMA110AHE3_A/I p4sma.pdf
P4SMA110AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 94VWM 152VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B5V1-G3-08 bzx84-g_series.pdf
BZX84B5V1-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 12000 Stücke:
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Anzahl Preis
3000+0.082 EUR
6000+0.074 EUR
9000+0.069 EUR
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BZX84B5V1-G3-08 bzx84-g_series.pdf
BZX84B5V1-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 14996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
95+0.19 EUR
194+0.091 EUR
500+0.088 EUR
1000+0.086 EUR
Mindestbestellmenge: 67
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BZT52B5V1-HE3-18 bzt52.pdf
BZT52B5V1-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
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BZT52B5V1-HE3-18 bzt52.pdf
BZT52B5V1-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZM55B5V1-TR3 bzm55.pdf
BZM55B5V1-TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZM55B5V1-TR3 bzm55.pdf
BZM55B5V1-TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
87+0.2 EUR
187+0.095 EUR
500+0.087 EUR
1000+0.079 EUR
2000+0.077 EUR
5000+0.074 EUR
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BZM55B15-TR bzm55.pdf
BZM55B15-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.082 EUR
5000+0.073 EUR
7500+0.069 EUR
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BZM55B15-TR bzm55.pdf
BZM55B15-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
auf Bestellung 7672 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
200+0.088 EUR
245+0.072 EUR
500+0.071 EUR
1000+0.06 EUR
Mindestbestellmenge: 112
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BZM55B12-TR bzm55.pdf
BZM55B12-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Qualification: AEC-Q101
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.089 EUR
5000+0.08 EUR
7500+0.062 EUR
12500+0.057 EUR
17500+0.056 EUR
Mindestbestellmenge: 2500
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BZM55B12-TR bzm55.pdf
BZM55B12-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Qualification: AEC-Q101
auf Bestellung 18900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
90+0.2 EUR
174+0.1 EUR
500+0.097 EUR
1000+0.092 EUR
Mindestbestellmenge: 59
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P6SMB33AHE3_B/I p6smb.pdf
P6SMB33AHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB33AHM3_B/I p6smb.pdf
P6SMB33AHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB33AHE3_B/H p6smb.pdf
P6SMB33AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB33AHM3_B/H p6smb.pdf
P6SMB33AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C4V3-HE3_A-18 bzx84_series.pdf
BZX84C4V3-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C4V3-HE3_A-08 bzx84_series.pdf
BZX84C4V3-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE82AHE3_B/C 15ke.pdf
1.5KE82AHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 70.1VWM 113VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.9A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB1635HE3_B/P mbrf16xx.pdf
MBRB1635HE3_B/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB1635HE3_B/I mbrf16xx.pdf
MBRB1635HE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H35HE3_B/P MBR(F,B)16H35 - 16H60.pdf
MBRB16H35HE3_B/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H45HE3_B/P MBR(F,B)16H35 - 16H60.pdf
MBRB16H45HE3_B/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H60HE3_B/P mbrb16h35_45_60.pdf
MBRB16H60HE3_B/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H35HE3_B/I MBR(F,B)16H35 - 16H60.pdf
MBRB16H35HE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H45HE3_B/I MBR(F,B)16H35 - 16H60.pdf
MBRB16H45HE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB16H60HE3_B/I mbrb16h35_45_60.pdf
MBRB16H60HE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB30H45CTHE3_B/I mbr30h100ct.pdf
MBRB30H45CTHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.03 EUR
1600+1.72 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
MBRB30H45CTHE3_B/I mbr30h100ct.pdf
MBRB30H45CTHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+3.01 EUR
100+2.4 EUR
Mindestbestellmenge: 5
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MBRB745-E3/45 mbr7xx.pdf
MBRB745-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 7.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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6DFN51A-M3/I 6dfn12athru6dfn51a.pdf
6DFN51A-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,51V 5%, DFN3820A TVS
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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6DFN51A-M3/I 6dfn12athru6dfn51a.pdf
6DFN51A-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,51V 5%, DFN3820A TVS
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 13920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
37+0.48 EUR
100+0.29 EUR
500+0.27 EUR
1000+0.18 EUR
2000+0.17 EUR
5000+0.16 EUR
Mindestbestellmenge: 29
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ES1BHM3_A/H es1.pdf
ES1BHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES1BHM3_A/I es1.pdf
ES1BHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P4SMA10AHE3_A/I p4sma.pdf
P4SMA10AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMA10AHM3_A/H p4sma.pdf
P4SMA10AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMA10AHM3_A/I p4sma.pdf
P4SMA10AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMBZ5930B-E3/52 smbz5945b.pdf
SMBZ5930B-E3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 3W DO214AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
auf Bestellung 4108 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
27+0.68 EUR
100+0.43 EUR
Mindestbestellmenge: 17
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GF1A-E3/67A gf1x.pdf
GF1A-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.23 EUR
Mindestbestellmenge: 1500
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V8PAM12HM3/I v8pam12.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 730pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8PAM12HM3/I v8pam12.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 730pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 12227 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
26+0.69 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.35 EUR
5000+0.31 EUR
Mindestbestellmenge: 17
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V8PA6HM3/I v8pa6.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1030pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8PA6HM3/I v8pa6.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1030pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 2555 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
25+0.72 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.36 EUR
2000+0.35 EUR
Mindestbestellmenge: 17
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V8PAM10-M3/I v8pam10.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 810pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
auf Bestellung 10382 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
24+0.76 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.35 EUR
2000+0.34 EUR
5000+0.3 EUR
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V8PA12HM3/I v8pa12.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 700pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 13840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
26+0.69 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.35 EUR
2000+0.33 EUR
5000+0.31 EUR
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V8PA22-M3/I v8pa22.pdf
V8PA22-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8PA22HM3/H v8pa22.pdf
V8PA22HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C75-E3-08 bzt52_series.pdf
BZT52C75-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Produkt ist nicht verfügbar
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BZT52C75-E3-08 bzt52_series.pdf
BZT52C75-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 410MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
auf Bestellung 14919 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
59+0.3 EUR
119+0.15 EUR
500+0.12 EUR
1000+0.086 EUR
Mindestbestellmenge: 39
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BZT55C75-GS08 bzt55.pdf
BZT55C75-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.059 EUR
5000+0.053 EUR
7500+0.049 EUR
Mindestbestellmenge: 2500
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BZT55C75-GS08 bzt55.pdf
BZT55C75-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Qualification: AEC-Q101
auf Bestellung 9794 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
134+0.13 EUR
278+0.063 EUR
500+0.062 EUR
1000+0.06 EUR
Mindestbestellmenge: 91
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V20K170-M3/H v20k170.pdf
V20K170-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.71 EUR
3000+0.67 EUR
Mindestbestellmenge: 1500
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V20K170-M3/H v20k170.pdf
V20K170-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.64 EUR
14+1.33 EUR
100+1.03 EUR
500+0.88 EUR
Mindestbestellmenge: 11
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V20K170HM3/I v20k170.pdf
V20K170HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V20K170-M3/I v20k170.pdf
V20K170-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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