Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (36591) > Seite 599 nach 610

Wählen Sie Seite:   [  << Vorherige Seite ]  1 61 122 183 244 305 366 427 488 549 594 595 596 597 598 599 600 601 602 603 604 610  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
V5NM103-M3/I V5NM103-M3/I Vishay General Semiconductor - Diodes Division v5nm103.pdf Description: 5A, 100V, DFN3820A TRENCH SKY RE
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 13838 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
29+ 0.61 EUR
100+ 0.42 EUR
500+ 0.33 EUR
1000+ 0.27 EUR
2000+ 0.24 EUR
5000+ 0.23 EUR
Mindestbestellmenge: 25
V3NM103-M3/I V3NM103-M3/I Vishay General Semiconductor - Diodes Division v3nm103.pdf Description: 3A, 100V, DFN3820A TRENCH SKY RE
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
V3NM103-M3/I V3NM103-M3/I Vishay General Semiconductor - Diodes Division v3nm103.pdf Description: 3A, 100V, DFN3820A TRENCH SKY RE
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 13822 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
30+ 0.6 EUR
100+ 0.36 EUR
500+ 0.33 EUR
1000+ 0.23 EUR
2000+ 0.21 EUR
5000+ 0.2 EUR
Mindestbestellmenge: 24
V5NM103HM3/I V5NM103HM3/I Vishay General Semiconductor - Diodes Division v5nm103.pdf Description: 5A, 100V, DFN3820A TRENCH SKY RE
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
V5NM103HM3/I V5NM103HM3/I Vishay General Semiconductor - Diodes Division v5nm103.pdf Description: 5A, 100V, DFN3820A TRENCH SKY RE
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 13935 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
26+ 0.68 EUR
100+ 0.47 EUR
500+ 0.37 EUR
1000+ 0.3 EUR
2000+ 0.27 EUR
5000+ 0.26 EUR
Mindestbestellmenge: 23
SE30DT12-M3/I SE30DT12-M3/I Vishay General Semiconductor - Diodes Division se30dt12.pdf Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
SE30DT12-M3/I SE30DT12-M3/I Vishay General Semiconductor - Diodes Division se30dt12.pdf Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 1568 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.27 EUR
10+ 2.71 EUR
100+ 2.15 EUR
500+ 1.82 EUR
1000+ 1.55 EUR
Mindestbestellmenge: 6
SE30DT12HM3/I SE30DT12HM3/I Vishay General Semiconductor - Diodes Division se30dt12.pdf Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SE30DT12HM3/I SE30DT12HM3/I Vishay General Semiconductor - Diodes Division se30dt12.pdf Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 1480 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.64 EUR
10+ 3.03 EUR
100+ 2.41 EUR
500+ 2.04 EUR
1000+ 1.73 EUR
Mindestbestellmenge: 5
BYWB29-150HE3_A/P BYWB29-150HE3_A/P Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 150V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
BYWB29-50HE3_A/P BYWB29-50HE3_A/P Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 50V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
BYWF29-100HE3_A/P BYWF29-100HE3_A/P Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 100V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
BYWF29-150HE3_A/P BYWF29-150HE3_A/P Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 150V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
BYWF29-200HE3_A/P BYWF29-200HE3_A/P Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 200V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
BYWF29-50HE3_A/P BYWF29-50HE3_A/P Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 50V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
BYWB29-150HE3_A/I BYWB29-150HE3_A/I Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 150V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
BYWB29-50HE3_A/I BYWB29-50HE3_A/I Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 50V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
MMSZ5244B-E3-18 MMSZ5244B-E3-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.055 EUR
Mindestbestellmenge: 10000
MMSZ5244B-E3-18 MMSZ5244B-E3-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
61+ 0.29 EUR
124+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
2000+ 0.072 EUR
5000+ 0.067 EUR
Mindestbestellmenge: 40
MMSZ5244B-HE3-18 MMSZ5244B-HE3-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ5244B-HE3-18 MMSZ5244B-HE3-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
auf Bestellung 6081 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
58+ 0.31 EUR
118+ 0.15 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.075 EUR
5000+ 0.07 EUR
Mindestbestellmenge: 39
MMSZ5244B-HE3_A-18 MMSZ5244B-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ5244B-HE3_A-08 MMSZ5244B-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1N5253B-TAP 1N5253B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 25V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1N5253B-TAP 1N5253B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 25V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Qualification: AEC-Q101
auf Bestellung 29895 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.047 EUR
Mindestbestellmenge: 10000
SMAJ75AHM3_A/H SMAJ75AHM3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ75AHM3_A/I SMAJ75AHM3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ75AHM3/H SMAJ75AHM3/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ75AHM3/I SMAJ75AHM3/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S1G-E3/61T S1G-E3/61T Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 958800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.11 EUR
3600+ 0.098 EUR
5400+ 0.091 EUR
9000+ 0.075 EUR
45000+ 0.074 EUR
90000+ 0.066 EUR
180000+ 0.057 EUR
Mindestbestellmenge: 1800
TLZ22A-GS08 TLZ22A-GS08 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 22V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 nA @ 19.1 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.067 EUR
5000+ 0.062 EUR
Mindestbestellmenge: 2500
TLZ22A-GS08 TLZ22A-GS08 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 22V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 nA @ 19.1 V
auf Bestellung 12494 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
65+ 0.27 EUR
133+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.077 EUR
Mindestbestellmenge: 44
1N914TR 1N914TR Vishay General Semiconductor - Diodes Division 1n914.pdf Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.044 EUR
30000+ 0.043 EUR
50000+ 0.039 EUR
Mindestbestellmenge: 10000
1N914TR 1N914TR Vishay General Semiconductor - Diodes Division 1n914.pdf Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 85745 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
76+ 0.23 EUR
156+ 0.11 EUR
500+ 0.095 EUR
1000+ 0.066 EUR
2000+ 0.057 EUR
5000+ 0.053 EUR
Mindestbestellmenge: 50
MMSZ5252C-E3-08 MMSZ5252C-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 24V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
auf Bestellung 99000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.061 EUR
6000+ 0.057 EUR
9000+ 0.049 EUR
Mindestbestellmenge: 3000
MMSZ5252C-E3-08 MMSZ5252C-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 24V 500MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
auf Bestellung 103117 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
50+ 0.36 EUR
102+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 34
BZX384B51-E3-08 BZX384B51-E3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 51V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 180 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.072 EUR
6000+ 0.067 EUR
9000+ 0.055 EUR
Mindestbestellmenge: 3000
BZX384B51-E3-08 BZX384B51-E3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 51V 200MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 180 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
auf Bestellung 23775 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
61+ 0.29 EUR
124+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
Mindestbestellmenge: 40
50WQ10FN 50WQ10FN Vishay General Semiconductor - Diodes Division 50WQ10FN.pdf Description: DIODE SCHOTTKY 100V 5.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 183pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
1.5KE43CAHE3_B/C 1.5KE43CAHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: 1.5KW,43V 5%,BIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MBRB745-E3C/I Vishay General Semiconductor - Diodes Division Description: VISHAY
Packaging: Bulk
Produkt ist nicht verfügbar
MBRB745HM3/I MBRB745HM3/I Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 7.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MBRB745-M3/I MBRB745-M3/I Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 7.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MBRB745-M3C/I Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
VS-30MQ040HM3/5AT VS-30MQ040HM3/5AT Vishay General Semiconductor - Diodes Division vs-30mq040hm3.pdf Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-30MQ040HM3/5AT VS-30MQ040HM3/5AT Vishay General Semiconductor - Diodes Division vs-30mq040hm3.pdf Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 4183 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
28+ 0.64 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.24 EUR
2000+ 0.22 EUR
Mindestbestellmenge: 22
VS-30WQ04FNTRL-M3 VS-30WQ04FNTRL-M3 Vishay General Semiconductor - Diodes Division vs-30wq04fn.pdf Description: DIODE SCHOTTKY 40V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.38 EUR
6000+ 0.36 EUR
9000+ 0.34 EUR
Mindestbestellmenge: 3000
VS-30WQ04FNTRL-M3 VS-30WQ04FNTRL-M3 Vishay General Semiconductor - Diodes Division vs-30wq04fn.pdf Description: DIODE SCHOTTKY 40V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
auf Bestellung 9390 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.02 EUR
21+ 0.87 EUR
100+ 0.6 EUR
500+ 0.5 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 18
VS-30WQ04FN-M3 VS-30WQ04FN-M3 Vishay General Semiconductor - Diodes Division vs-30wq04fn.pdf Description: DIODE SCHOTTKY 40V 3.5A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
auf Bestellung 4114 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.02 EUR
75+ 0.83 EUR
150+ 0.6 EUR
525+ 0.5 EUR
1050+ 0.43 EUR
2025+ 0.38 EUR
Mindestbestellmenge: 18
BZD27C15P-M3-08 BZD27C15P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
BZD27C15P-M3-08 BZD27C15P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
auf Bestellung 29883 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
39+ 0.46 EUR
100+ 0.23 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 28
BZD27C39P-HE3-08 BZD27C39P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 39V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.23 EUR
6000+ 0.21 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
BZD27C39P-HE3-08 BZD27C39P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 39V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 31350 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
31+ 0.57 EUR
100+ 0.4 EUR
500+ 0.31 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 27
P4SMA36CAHE3_A/H P4SMA36CAHE3_A/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.27 EUR
3600+ 0.24 EUR
5400+ 0.23 EUR
Mindestbestellmenge: 1800
P4SMA36CAHE3_A/H P4SMA36CAHE3_A/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8960 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
29+ 0.62 EUR
100+ 0.43 EUR
500+ 0.34 EUR
Mindestbestellmenge: 25
P4SMA36CAHE3_A/I P4SMA36CAHE3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
7500+0.23 EUR
Mindestbestellmenge: 7500
P4SMA36CAHE3_A/I P4SMA36CAHE3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
29+ 0.62 EUR
100+ 0.43 EUR
500+ 0.34 EUR
1000+ 0.27 EUR
2000+ 0.24 EUR
Mindestbestellmenge: 25
P4SMA36CAHM3_A/H P4SMA36CAHM3_A/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.46 EUR
3600+ 0.41 EUR
5400+ 0.39 EUR
9000+ 0.36 EUR
Mindestbestellmenge: 1800
P4SMA36CAHM3_A/H P4SMA36CAHM3_A/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.07 EUR
19+ 0.94 EUR
100+ 0.65 EUR
500+ 0.54 EUR
Mindestbestellmenge: 17
P4SMA36CAHM3_A/I P4SMA36CAHM3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
V5NM103-M3/I v5nm103.pdf
V5NM103-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 5A, 100V, DFN3820A TRENCH SKY RE
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 13838 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
29+ 0.61 EUR
100+ 0.42 EUR
500+ 0.33 EUR
1000+ 0.27 EUR
2000+ 0.24 EUR
5000+ 0.23 EUR
Mindestbestellmenge: 25
V3NM103-M3/I v3nm103.pdf
V3NM103-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3A, 100V, DFN3820A TRENCH SKY RE
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
V3NM103-M3/I v3nm103.pdf
V3NM103-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3A, 100V, DFN3820A TRENCH SKY RE
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 13822 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
30+ 0.6 EUR
100+ 0.36 EUR
500+ 0.33 EUR
1000+ 0.23 EUR
2000+ 0.21 EUR
5000+ 0.2 EUR
Mindestbestellmenge: 24
V5NM103HM3/I v5nm103.pdf
V5NM103HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 5A, 100V, DFN3820A TRENCH SKY RE
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
V5NM103HM3/I v5nm103.pdf
V5NM103HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 5A, 100V, DFN3820A TRENCH SKY RE
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 13935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.79 EUR
26+ 0.68 EUR
100+ 0.47 EUR
500+ 0.37 EUR
1000+ 0.3 EUR
2000+ 0.27 EUR
5000+ 0.26 EUR
Mindestbestellmenge: 23
SE30DT12-M3/I se30dt12.pdf
SE30DT12-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
SE30DT12-M3/I se30dt12.pdf
SE30DT12-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 1568 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.27 EUR
10+ 2.71 EUR
100+ 2.15 EUR
500+ 1.82 EUR
1000+ 1.55 EUR
Mindestbestellmenge: 6
SE30DT12HM3/I se30dt12.pdf
SE30DT12HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SE30DT12HM3/I se30dt12.pdf
SE30DT12HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 1480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.64 EUR
10+ 3.03 EUR
100+ 2.41 EUR
500+ 2.04 EUR
1000+ 1.73 EUR
Mindestbestellmenge: 5
BYWB29-150HE3_A/P byw29200.pdf
BYWB29-150HE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
BYWB29-50HE3_A/P byw29200.pdf
BYWB29-50HE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
BYWF29-100HE3_A/P byw29200.pdf
BYWF29-100HE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
BYWF29-150HE3_A/P byw29200.pdf
BYWF29-150HE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
BYWF29-200HE3_A/P byw29200.pdf
BYWF29-200HE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
BYWF29-50HE3_A/P byw29200.pdf
BYWF29-50HE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
BYWB29-150HE3_A/I byw29200.pdf
BYWB29-150HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
BYWB29-50HE3_A/I byw29200.pdf
BYWB29-50HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
MMSZ5244B-E3-18 mmsz5225_to_mmsz5267.pdf
MMSZ5244B-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.055 EUR
Mindestbestellmenge: 10000
MMSZ5244B-E3-18 mmsz5225_to_mmsz5267.pdf
MMSZ5244B-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
40+0.44 EUR
61+ 0.29 EUR
124+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
2000+ 0.072 EUR
5000+ 0.067 EUR
Mindestbestellmenge: 40
MMSZ5244B-HE3-18 mmsz5225_to_mmsz5267.pdf
MMSZ5244B-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ5244B-HE3-18 mmsz5225_to_mmsz5267.pdf
MMSZ5244B-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
auf Bestellung 6081 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
39+0.46 EUR
58+ 0.31 EUR
118+ 0.15 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.075 EUR
5000+ 0.07 EUR
Mindestbestellmenge: 39
MMSZ5244B-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5244B-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ5244B-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5244B-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1N5253B-TAP 1n5221.pdf
1N5253B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 25V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1N5253B-TAP 1n5221.pdf
1N5253B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 25V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Qualification: AEC-Q101
auf Bestellung 29895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.047 EUR
Mindestbestellmenge: 10000
SMAJ75AHM3_A/H smaj50a.pdf
SMAJ75AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ75AHM3_A/I smaj50a.pdf
SMAJ75AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ75AHM3/H smaj50a.pdf
SMAJ75AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ75AHM3/I smaj50a.pdf
SMAJ75AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S1G-E3/61T s1.pdf
S1G-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 958800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.11 EUR
3600+ 0.098 EUR
5400+ 0.091 EUR
9000+ 0.075 EUR
45000+ 0.074 EUR
90000+ 0.066 EUR
180000+ 0.057 EUR
Mindestbestellmenge: 1800
TLZ22A-GS08 tlz.pdf
TLZ22A-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 nA @ 19.1 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.067 EUR
5000+ 0.062 EUR
Mindestbestellmenge: 2500
TLZ22A-GS08 tlz.pdf
TLZ22A-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 nA @ 19.1 V
auf Bestellung 12494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
44+0.4 EUR
65+ 0.27 EUR
133+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.077 EUR
Mindestbestellmenge: 44
1N914TR 1n914.pdf
1N914TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.044 EUR
30000+ 0.043 EUR
50000+ 0.039 EUR
Mindestbestellmenge: 10000
1N914TR 1n914.pdf
1N914TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 85745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+0.35 EUR
76+ 0.23 EUR
156+ 0.11 EUR
500+ 0.095 EUR
1000+ 0.066 EUR
2000+ 0.057 EUR
5000+ 0.053 EUR
Mindestbestellmenge: 50
MMSZ5252C-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5252C-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
auf Bestellung 99000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.061 EUR
6000+ 0.057 EUR
9000+ 0.049 EUR
Mindestbestellmenge: 3000
MMSZ5252C-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5252C-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
auf Bestellung 103117 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
50+ 0.36 EUR
102+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 34
BZX384B51-E3-08 bzx384.pdf
BZX384B51-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 51V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 180 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.072 EUR
6000+ 0.067 EUR
9000+ 0.055 EUR
Mindestbestellmenge: 3000
BZX384B51-E3-08 bzx384.pdf
BZX384B51-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 51V 200MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 180 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
auf Bestellung 23775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
40+0.44 EUR
61+ 0.29 EUR
124+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
Mindestbestellmenge: 40
50WQ10FN 50WQ10FN.pdf
50WQ10FN
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 5.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 183pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
1.5KE43CAHE3_B/C 15ke.pdf
1.5KE43CAHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1.5KW,43V 5%,BIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MBRB745-E3C/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: VISHAY
Packaging: Bulk
Produkt ist nicht verfügbar
MBRB745HM3/I
MBRB745HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 7.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MBRB745-M3/I
MBRB745-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 7.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MBRB745-M3C/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
VS-30MQ040HM3/5AT vs-30mq040hm3.pdf
VS-30MQ040HM3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-30MQ040HM3/5AT vs-30mq040hm3.pdf
VS-30MQ040HM3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 4183 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.83 EUR
28+ 0.64 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.24 EUR
2000+ 0.22 EUR
Mindestbestellmenge: 22
VS-30WQ04FNTRL-M3 vs-30wq04fn.pdf
VS-30WQ04FNTRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.38 EUR
6000+ 0.36 EUR
9000+ 0.34 EUR
Mindestbestellmenge: 3000
VS-30WQ04FNTRL-M3 vs-30wq04fn.pdf
VS-30WQ04FNTRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
auf Bestellung 9390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1.02 EUR
21+ 0.87 EUR
100+ 0.6 EUR
500+ 0.5 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 18
VS-30WQ04FN-M3 vs-30wq04fn.pdf
VS-30WQ04FN-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3.5A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
auf Bestellung 4114 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1.02 EUR
75+ 0.83 EUR
150+ 0.6 EUR
525+ 0.5 EUR
1050+ 0.43 EUR
2025+ 0.38 EUR
Mindestbestellmenge: 18
BZD27C15P-M3-08 BZD27-M_Series.pdf
BZD27C15P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
BZD27C15P-M3-08 BZD27-M_Series.pdf
BZD27C15P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
auf Bestellung 29883 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
39+ 0.46 EUR
100+ 0.23 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 28
BZD27C39P-HE3-08 bzd27series.pdf
BZD27C39P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
6000+ 0.21 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
BZD27C39P-HE3-08 bzd27series.pdf
BZD27C39P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 31350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
31+ 0.57 EUR
100+ 0.4 EUR
500+ 0.31 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 27
P4SMA36CAHE3_A/H p4sma.pdf
P4SMA36CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.27 EUR
3600+ 0.24 EUR
5400+ 0.23 EUR
Mindestbestellmenge: 1800
P4SMA36CAHE3_A/H p4sma.pdf
P4SMA36CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
29+ 0.62 EUR
100+ 0.43 EUR
500+ 0.34 EUR
Mindestbestellmenge: 25
P4SMA36CAHE3_A/I p4sma.pdf
P4SMA36CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7500+0.23 EUR
Mindestbestellmenge: 7500
P4SMA36CAHE3_A/I p4sma.pdf
P4SMA36CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
29+ 0.62 EUR
100+ 0.43 EUR
500+ 0.34 EUR
1000+ 0.27 EUR
2000+ 0.24 EUR
Mindestbestellmenge: 25
P4SMA36CAHM3_A/H p4sma.pdf
P4SMA36CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.46 EUR
3600+ 0.41 EUR
5400+ 0.39 EUR
9000+ 0.36 EUR
Mindestbestellmenge: 1800
P4SMA36CAHM3_A/H p4sma.pdf
P4SMA36CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.07 EUR
19+ 0.94 EUR
100+ 0.65 EUR
500+ 0.54 EUR
Mindestbestellmenge: 17
P4SMA36CAHM3_A/I p4sma.pdf
P4SMA36CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 61 122 183 244 305 366 427 488 549 594 595 596 597 598 599 600 601 602 603 604 610  [ Nächste Seite >> ]