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PLZ33D-HG3_A/H PLZ33D-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 33V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Produkt ist nicht verfügbar
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PLZ33D-HG3_A/H PLZ33D-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 33V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Produkt ist nicht verfügbar
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MMSZ4717-E3-08 MMSZ4717-E3-08 Vishay General Semiconductor - Diodes Division mmsz4681_to_mmsz4717.pdf Description: DIODE ZENER 43V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 32.6 V
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MMSZ4717-E3-08 MMSZ4717-E3-08 Vishay General Semiconductor - Diodes Division mmsz4681_to_mmsz4717.pdf Description: DIODE ZENER 43V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 32.6 V
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BZX84C4V7-HE3_A-18 BZX84C4V7-HE3_A-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 4.7V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
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BZX84C4V7-HE3_A-08 BZX84C4V7-HE3_A-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 4.7V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
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BZX84C5V1-HE3_A-08 BZX84C5V1-HE3_A-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 5.1V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
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BZX84C5V1-HE3_A-18 BZX84C5V1-HE3_A-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 5.1V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
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BZX84C18-HE3_A-08 BZX84C18-HE3_A-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 18V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Qualification: AEC-Q101
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BZX84C18-HE3_A-18 BZX84C18-HE3_A-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 18V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Qualification: AEC-Q101
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BAS33-TAP BAS33-TAP Vishay General Semiconductor - Diodes Division bas33.pdf Description: DIODE GEN PURP 30V 200MA DO35
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
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BAS33-TAP BAS33-TAP Vishay General Semiconductor - Diodes Division bas33.pdf Description: DIODE GEN PURP 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 15 V
Qualification: AEC-Q101
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30CPQ035 30CPQ035 Vishay General Semiconductor - Diodes Division 30CPQ035%2C40%2C45.pdf Description: DIODE ARR SCHOTT 35V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 35 V
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VS-S941 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP
Packaging: Bulk
Produkt ist nicht verfügbar
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VS-S940 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP
Packaging: Bulk
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SMF18A-HM3-08 SMF18A-HM3-08 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 18VWM 29.2VC DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 18V
Current - Peak Pulse (10/1000µs): 6.8A
Capacitance @ Frequency: 320pF @ 1MHz
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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SMF18A-HM3-08 SMF18A-HM3-08 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 18VWM 29.2VC DO219AB
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Qualification: AEC-Q101
Grade: Automotive
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 18V
Current - Peak Pulse (10/1000µs): 6.8A
Capacitance @ Frequency: 320pF @ 1MHz
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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1.5KE47AHE3_B/C 1.5KE47AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 40.2VWM 64.8VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SE100PWTJ-M3/I SE100PWTJ-M3/I Vishay General Semiconductor - Diodes Division se100pwtg_tj.pdf Description: DIODE STD 600V 2.7A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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SE100PWTJ-M3/I SE100PWTJ-M3/I Vishay General Semiconductor - Diodes Division se100pwtg_tj.pdf Description: DIODE STD 600V 2.7A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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SE100PWTGHM3/I SE100PWTGHM3/I Vishay General Semiconductor - Diodes Division se100pwtg_tj.pdf Description: DIODE STD 400V 2.7A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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SE100PWTGHM3/I SE100PWTGHM3/I Vishay General Semiconductor - Diodes Division se100pwtg_tj.pdf Description: DIODE STD 400V 2.7A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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SE100PWTJHM3/I SE100PWTJHM3/I Vishay General Semiconductor - Diodes Division se100pwtg_tj.pdf Description: DIODE STD 600V 2.7A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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SE100PWTJHM3/I SE100PWTJHM3/I Vishay General Semiconductor - Diodes Division se100pwtg_tj.pdf Description: DIODE STD 600V 2.7A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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SE100PWTG-M3/I SE100PWTG-M3/I Vishay General Semiconductor - Diodes Division se100pwtg_tj.pdf Description: DIODE STD 400V 2.7A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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SE100PWTG-M3/I SE100PWTG-M3/I Vishay General Semiconductor - Diodes Division se100pwtg_tj.pdf Description: DIODE STD 400V 2.7A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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SE100PWJHM3/I SE100PWJHM3/I Vishay General Semiconductor - Diodes Division se100pwbdgj.pdf Description: DIODE STANDARD 600V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Qualification: AEC-Q101
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SE100PWB-M3/I Vishay General Semiconductor - Diodes Division se100pwbdgj.pdf Description: DIODE STANDARD 100V 10A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 100
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
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SE100PWD-M3/I Vishay General Semiconductor - Diodes Division se100pwbdgj.pdf Description: DIODE GEN PURP 200V 10A SLIMDPAK
Voltage - DC Reverse (Vr) (Max): 200 V
Reverse Recovery Time (trr): 2.6 µs
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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SE100PWG-M3/I Vishay General Semiconductor - Diodes Division se100pwbdgj.pdf Description: DIODE STANDARD 400V 10A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Reverse Recovery Time (trr): 2.6 µs
Voltage - DC Reverse (Vr) (Max): 400 V
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SE100PWJ-M3/I SE100PWJ-M3/I Vishay General Semiconductor - Diodes Division se100pwbdgj.pdf Description: DIODE STANDARD 600V 10A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Reverse Recovery Time (trr): 2.6 µs
Voltage - DC Reverse (Vr) (Max): 600 V
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SE100PWDHM3/I Vishay General Semiconductor - Diodes Division se100pwbdgj.pdf Description: DIODE GEN PURP 200V 10A SLIMDPAK
Qualification: AEC-Q101
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Reverse Recovery Time (trr): 2.6 µs
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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SE100PWGHM3/I Vishay General Semiconductor - Diodes Division se100pwbdgj.pdf Description: DIODE GEN PURP 400V 10A SLIMDPAK
Qualification: AEC-Q101
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Reverse Recovery Time (trr): 2.6 µs
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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VS-6CWQ06FNTRL-M3 VS-6CWQ06FNTRL-M3 Vishay General Semiconductor - Diodes Division vs-6cwq06fn.pdf Description: DIODE ARRAY SCHOTT 60V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
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VS-6CWQ06FNTRL-M3 VS-6CWQ06FNTRL-M3 Vishay General Semiconductor - Diodes Division vs-6cwq06fn.pdf Description: DIODE ARRAY SCHOTT 60V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
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BU1006-M3/45 BU1006-M3/45 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1PHASE 600V 10A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MMSZ5246C-E3-08 MMSZ5246C-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 16V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
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MMSZ5246C-E3-08 MMSZ5246C-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 16V 500MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
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MMSZ5246C-HE3_A-08 MMSZ5246C-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 16V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
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MMSZ5246C-HE3_A-18 MMSZ5246C-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 16V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B15-HE3_A-18 BZX84B15-HE3_A-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 15V 300MW SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
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BZX84B15-HE3_A-08 BZX84B15-HE3_A-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 15V 300MW SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5KE8.2AHE3_B/C 1.5KE8.2AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: 1.5KW,8.2V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 130A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4001GPE-E3/54 1N4001GPE-E3/54 Vishay General Semiconductor - Diodes Division 1n4001gp.pdf Description: DIODE STANDARD 50V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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SMAJ90CA-M3/5A SMAJ90CA-M3/5A Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 2.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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SMAJ90CA-M3/61 SMAJ90CA-M3/61 Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 2.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMAJ90CAHE3_A/I SMAJ90CAHE3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 2.1A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMAJ90CAHM3_A/H SMAJ90CAHM3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 2.1A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMAJ90CAHM3_A/I SMAJ90CAHM3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 2.1A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Produkt ist nicht verfügbar
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BZT52B16-HE3_A-18 BZT52B16-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 16V 300MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Power - Max: 300 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BZT52B16-HE3_A-08 BZT52B16-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 16V 300MW SOD123
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Power - Max: 300 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Produkt ist nicht verfügbar
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SS24HE3_A/I SS24HE3_A/I Vishay General Semiconductor - Diodes Division ss22.pdf Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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VS-8EWH06FNTRL-M3 VS-8EWH06FNTRL-M3 Vishay General Semiconductor - Diodes Division vs-8ewh06fn-m3.pdf Description: DIODE STANDARD 600V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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1.5KE22CAHE3_B/C 1.5KE22CAHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 18.8VWM 30.6VC 1.5KE
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 30.6V
Voltage - Breakdown (Min): 20.9V
Bidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 18.8V
Current - Peak Pulse (10/1000µs): 51A
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BZX84C8V2-HE3_A-08 BZX84C8V2-HE3_A-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 8.2V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C8V2-HE3_A-18 BZX84C8V2-HE3_A-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 8.2V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BYG21MHE3_A/H BYG21MHE3_A/H Vishay General Semiconductor - Diodes Division byg21k.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
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SMBJ13CAHM3_B/I SMBJ13CAHM3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ZMY39-GS08 ZMY39-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 39V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 29 V
Qualification: AEC-Q101
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ZMY39-GS08 ZMY39-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 39V 1W DO213AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 29 V
Qualification: AEC-Q101
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PLZ33D-HG3_A/H plzseries.pdf
PLZ33D-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Produkt ist nicht verfügbar
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PLZ33D-HG3_A/H plzseries.pdf
PLZ33D-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Produkt ist nicht verfügbar
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MMSZ4717-E3-08 mmsz4681_to_mmsz4717.pdf
MMSZ4717-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 32.6 V
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3000+0.061 EUR
6000+0.056 EUR
9000+0.048 EUR
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MMSZ4717-E3-08 mmsz4681_to_mmsz4717.pdf
MMSZ4717-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 32.6 V
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BZX84C4V7-HE3_A-18 bzx84_series.pdf
BZX84C4V7-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C4V7-HE3_A-08 bzx84_series.pdf
BZX84C4V7-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
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3000+0.11 EUR
6000+0.1 EUR
9000+0.094 EUR
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BZX84C5V1-HE3_A-08 bzx84_series.pdf
BZX84C5V1-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C5V1-HE3_A-18 bzx84_series.pdf
BZX84C5V1-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C18-HE3_A-08 bzx84_series.pdf
BZX84C18-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C18-HE3_A-18 bzx84_series.pdf
BZX84C18-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS33-TAP bas33.pdf
BAS33-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 30V 200MA DO35
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
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44+0.48 EUR
71+0.3 EUR
115+0.18 EUR
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BAS33-TAP bas33.pdf
BAS33-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 15 V
Qualification: AEC-Q101
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10000+0.082 EUR
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30CPQ035 30CPQ035%2C40%2C45.pdf
30CPQ035
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 35V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 35 V
Produkt ist nicht verfügbar
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VS-S941
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP
Packaging: Bulk
Produkt ist nicht verfügbar
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VS-S940
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP
Packaging: Bulk
Produkt ist nicht verfügbar
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SMF18A-HM3-08 smf5v0atosmf58a.pdf
SMF18A-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 18V
Current - Peak Pulse (10/1000µs): 6.8A
Capacitance @ Frequency: 320pF @ 1MHz
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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3000+0.19 EUR
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SMF18A-HM3-08 smf5v0atosmf58a.pdf
SMF18A-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO219AB
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Qualification: AEC-Q101
Grade: Automotive
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 18V
Current - Peak Pulse (10/1000µs): 6.8A
Capacitance @ Frequency: 320pF @ 1MHz
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 25463 Stücke:
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20+1.05 EUR
33+0.64 EUR
100+0.42 EUR
500+0.31 EUR
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1.5KE47AHE3_B/C 15ke.pdf
1.5KE47AHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40.2VWM 64.8VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SE100PWTJ-M3/I se100pwtg_tj.pdf
SE100PWTJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 600V 2.7A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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4500+0.82 EUR
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SE100PWTJ-M3/I se100pwtg_tj.pdf
SE100PWTJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 600V 2.7A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4800 Stücke:
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7+3.03 EUR
11+1.92 EUR
100+1.27 EUR
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SE100PWTGHM3/I se100pwtg_tj.pdf
SE100PWTGHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 400V 2.7A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SE100PWTGHM3/I se100pwtg_tj.pdf
SE100PWTGHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 400V 2.7A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4468 Stücke:
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7+3.45 EUR
10+2.21 EUR
100+1.49 EUR
500+1.17 EUR
1000+1.07 EUR
2000+0.99 EUR
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SE100PWTJHM3/I se100pwtg_tj.pdf
SE100PWTJHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 600V 2.7A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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SE100PWTJHM3/I se100pwtg_tj.pdf
SE100PWTJHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 600V 2.7A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4700 Stücke:
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7+3.45 EUR
10+2.21 EUR
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SE100PWTG-M3/I se100pwtg_tj.pdf
SE100PWTG-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 400V 2.7A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SE100PWTG-M3/I se100pwtg_tj.pdf
SE100PWTG-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 400V 2.7A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2992 Stücke:
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7+3.03 EUR
11+1.92 EUR
100+1.27 EUR
500+1 EUR
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SE100PWJHM3/I se100pwbdgj.pdf
SE100PWJHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3246 Stücke:
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7+3.33 EUR
10+2.12 EUR
100+1.42 EUR
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SE100PWB-M3/I se100pwbdgj.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 10A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 100
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Produkt ist nicht verfügbar
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SE100PWD-M3/I se100pwbdgj.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A SLIMDPAK
Voltage - DC Reverse (Vr) (Max): 200 V
Reverse Recovery Time (trr): 2.6 µs
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SE100PWG-M3/I se100pwbdgj.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 10A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Reverse Recovery Time (trr): 2.6 µs
Voltage - DC Reverse (Vr) (Max): 400 V
Produkt ist nicht verfügbar
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SE100PWJ-M3/I se100pwbdgj.pdf
SE100PWJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 10A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Reverse Recovery Time (trr): 2.6 µs
Voltage - DC Reverse (Vr) (Max): 600 V
Produkt ist nicht verfügbar
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SE100PWDHM3/I se100pwbdgj.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A SLIMDPAK
Qualification: AEC-Q101
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Reverse Recovery Time (trr): 2.6 µs
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SE100PWGHM3/I se100pwbdgj.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 10A SLIMDPAK
Qualification: AEC-Q101
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Reverse Recovery Time (trr): 2.6 µs
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-6CWQ06FNTRL-M3 vs-6cwq06fn.pdf
VS-6CWQ06FNTRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 60V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
auf Bestellung 3000 Stücke:
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VS-6CWQ06FNTRL-M3 vs-6cwq06fn.pdf
VS-6CWQ06FNTRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 60V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
auf Bestellung 4859 Stücke:
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BU1006-M3/45 bu1006.pdf
BU1006-M3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 10A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 752 Stücke:
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MMSZ5246C-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5246C-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
auf Bestellung 9000 Stücke:
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3000+0.1 EUR
6000+0.096 EUR
9000+0.08 EUR
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MMSZ5246C-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5246C-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
auf Bestellung 13027 Stücke:
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AnzahlPrivatkunde
34+0.63 EUR
50+0.43 EUR
102+0.2 EUR
500+0.17 EUR
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MMSZ5246C-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5246C-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5246C-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5246C-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B15-HE3_A-18 bzx84_series.pdf
BZX84B15-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 300MW SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar
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BZX84B15-HE3_A-08 bzx84_series.pdf
BZX84B15-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 300MW SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5KE8.2AHE3_B/C 15ke.pdf
1.5KE8.2AHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1.5KW,8.2V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 130A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4001GPE-E3/54 1n4001gp.pdf
1N4001GPE-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 10806 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.92 EUR
12+1.84 EUR
100+1.23 EUR
500+0.96 EUR
1000+0.88 EUR
2000+0.81 EUR
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SMAJ90CA-M3/5A smaj50a.pdf
SMAJ90CA-M3/5A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 2.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMAJ90CA-M3/61 smaj50a.pdf
SMAJ90CA-M3/61
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 2.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMAJ90CAHE3_A/I smaj50a.pdf
SMAJ90CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 2.1A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMAJ90CAHM3_A/H smaj50a.pdf
SMAJ90CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 2.1A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMAJ90CAHM3_A/I smaj50a.pdf
SMAJ90CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 2.1A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Produkt ist nicht verfügbar
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BZT52B16-HE3_A-18 bzt52.pdf
BZT52B16-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 300MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Power - Max: 300 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BZT52B16-HE3_A-08 bzt52.pdf
BZT52B16-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 300MW SOD123
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Power - Max: 300 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Produkt ist nicht verfügbar
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SS24HE3_A/I ss22.pdf
SS24HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.65 EUR
21+1.04 EUR
100+0.67 EUR
500+0.51 EUR
1000+0.46 EUR
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VS-8EWH06FNTRL-M3 vs-8ewh06fn-m3.pdf
VS-8EWH06FNTRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 2925 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.06 EUR
10+2.59 EUR
100+1.76 EUR
500+1.39 EUR
1000+1.29 EUR
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1.5KE22CAHE3_B/C 15ke.pdf
1.5KE22CAHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC 1.5KE
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 30.6V
Voltage - Breakdown (Min): 20.9V
Bidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 18.8V
Current - Peak Pulse (10/1000µs): 51A
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BZX84C8V2-HE3_A-08 bzx84_series.pdf
BZX84C8V2-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C8V2-HE3_A-18 bzx84_series.pdf
BZX84C8V2-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BYG21MHE3_A/H byg21k.pdf
BYG21MHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 3813 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
33+0.64 EUR
100+0.45 EUR
500+0.35 EUR
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SMBJ13CAHM3_B/I smbj.pdf
SMBJ13CAHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ZMY39-GS08 zmy3v9.pdf
ZMY39-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 29 V
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.25 EUR
3000+0.23 EUR
4500+0.21 EUR
7500+0.2 EUR
10500+0.19 EUR
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ZMY39-GS08 zmy3v9.pdf
ZMY39-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 1W DO213AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 29 V
Qualification: AEC-Q101
auf Bestellung 11828 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
39+0.55 EUR
100+0.29 EUR
500+0.27 EUR
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