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TPC15AHM3_A/I TPC15AHM3_A/I Vishay General Semiconductor - Diodes Division TPC6.8A_-_TPC51A.pdf Description: TVS DIODE 12.8VWM 21.2VC TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 70.8A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TPC16AHM3_A/I TPC16AHM3_A/I Vishay General Semiconductor - Diodes Division TPC6.8A_-_TPC51A.pdf Description: TVS DIODE 13.6VWM 22.5VC TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 66.7A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TPC18AHM3_A/I TPC18AHM3_A/I Vishay General Semiconductor - Diodes Division TPC6.8A_-_TPC51A.pdf Description: TVS DIODE 15.3VWM 25.2VC TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TPC12AHM3_A/H TPC12AHM3_A/H Vishay General Semiconductor - Diodes Division TPC6.8A_-_TPC51A.pdf Description: TVS DIODE 10.2VWM 16.7VC TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZT52C16-HE3-08 BZT52C16-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 16V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
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BZT52C16-HE3-08 BZT52C16-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 16V 410MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
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BZT52C16-HE3_A-18 BZT52C16-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 16V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
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BZT52C16-HE3_A-08 BZT52C16-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 16V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
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T15B12AHM3/I T15B12AHM3/I Vishay General Semiconductor - Diodes Division t15b12athrut15b51a.pdf Description: TVS DIODE 10.2VWM 17VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 91.2A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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T15B12AHM3/I T15B12AHM3/I Vishay General Semiconductor - Diodes Division t15b12athrut15b51a.pdf Description: TVS DIODE 10.2VWM 17VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 91.2A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VS-72CPQ030-N3 VS-72CPQ030-N3 Vishay General Semiconductor - Diodes Division VS-72CPQ030PbF%2CN3.pdf Description: DIODE ARR SCHOTT 30V 35A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.9 mA @ 30 V
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VS-1EAH02HM3/I VS-1EAH02HM3/I Vishay General Semiconductor - Diodes Division vs-1eah02hm3.pdf Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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VS-1EAH02HM3/I VS-1EAH02HM3/I Vishay General Semiconductor - Diodes Division vs-1eah02hm3.pdf Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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VS-2EAH02-M3/I VS-2EAH02-M3/I Vishay General Semiconductor - Diodes Division vs-2eah02-m3.pdf Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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VS-2EAH02-M3/I VS-2EAH02-M3/I Vishay General Semiconductor - Diodes Division vs-2eah02-m3.pdf Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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VS-3EAH02-M3/I VS-3EAH02-M3/I Vishay General Semiconductor - Diodes Division vs-3eah02-m3.pdf Description: 3A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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VS-3EAH02-M3/I VS-3EAH02-M3/I Vishay General Semiconductor - Diodes Division vs-3eah02-m3.pdf Description: 3A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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VS-3EAH02-M3/H VS-3EAH02-M3/H Vishay General Semiconductor - Diodes Division vs-3eah02-m3.pdf Description: DIODE STANDARD 200V 3A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
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VS-3EAH02-M3/H VS-3EAH02-M3/H Vishay General Semiconductor - Diodes Division vs-3eah02-m3.pdf Description: DIODE STANDARD 200V 3A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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VS-2EAH02HM3/I VS-2EAH02HM3/I Vishay General Semiconductor - Diodes Division vs-2eah02hm3.pdf Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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VS-2EAH02HM3/I VS-2EAH02HM3/I Vishay General Semiconductor - Diodes Division vs-2eah02hm3.pdf Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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VS-3EAH02HM3/I VS-3EAH02HM3/I Vishay General Semiconductor - Diodes Division vs-3eah02hm3.pdf Description: 3A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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VS-3EAH02HM3/I VS-3EAH02HM3/I Vishay General Semiconductor - Diodes Division vs-3eah02hm3.pdf Description: 3A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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VS-3EAH02HM3/H VS-3EAH02HM3/H Vishay General Semiconductor - Diodes Division vs-3eah02hm3.pdf Description: DIODE STANDARD 200V 3A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-3EAH02HM3/H VS-3EAH02HM3/H Vishay General Semiconductor - Diodes Division vs-3eah02hm3.pdf Description: DIODE STANDARD 200V 3A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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VS-2EAH02HM3/H VS-2EAH02HM3/H Vishay General Semiconductor - Diodes Division vs-2eah02hm3.pdf Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
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VS-2EAH02HM3/H VS-2EAH02HM3/H Vishay General Semiconductor - Diodes Division vs-2eah02hm3.pdf Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3800 Stücke:
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500+0.43 EUR
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VS-2EAH02-M3/H VS-2EAH02-M3/H Vishay General Semiconductor - Diodes Division vs-2eah02-m3.pdf Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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VS-2EAH02-M3/H VS-2EAH02-M3/H Vishay General Semiconductor - Diodes Division vs-2eah02-m3.pdf Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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VS-5EAH02-M3/I VS-5EAH02-M3/I Vishay General Semiconductor - Diodes Division vs-5eah02-m3.pdf Description: 5A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
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VS-5EAH02-M3/I VS-5EAH02-M3/I Vishay General Semiconductor - Diodes Division vs-5eah02-m3.pdf Description: 5A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
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VS-5EAH02HM3/H VS-5EAH02HM3/H Vishay General Semiconductor - Diodes Division vs-5eah02hm3.pdf Description: DIODE STANDARD 200V 5A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
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VS-5EAH02HM3/H VS-5EAH02HM3/H Vishay General Semiconductor - Diodes Division vs-5eah02hm3.pdf Description: DIODE STANDARD 200V 5A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3011 Stücke:
Lieferzeit 10-14 Tag (e)
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VS-5EAH02-M3/H VS-5EAH02-M3/H Vishay General Semiconductor - Diodes Division vs-5eah02-m3.pdf Description: DIODE STANDARD 200V 5A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
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VS-5EAH02-M3/H VS-5EAH02-M3/H Vishay General Semiconductor - Diodes Division vs-5eah02-m3.pdf Description: DIODE STANDARD 200V 5A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
auf Bestellung 2508 Stücke:
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30+0.7 EUR
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VS-1EAH02HM3/H VS-1EAH02HM3/H Vishay General Semiconductor - Diodes Division vs-1eah02hm3.pdf Description: DIODE STANDARD 200V 1A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
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VS-1EAH02HM3/H VS-1EAH02HM3/H Vishay General Semiconductor - Diodes Division vs-1eah02hm3.pdf Description: DIODE STANDARD 200V 1A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 2708 Stücke:
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VS-1EAH02-M3/H VS-1EAH02-M3/H Vishay General Semiconductor - Diodes Division vs-1eah02-m3.pdf Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
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VS-1EAH02-M3/H VS-1EAH02-M3/H Vishay General Semiconductor - Diodes Division vs-1eah02-m3.pdf Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 3770 Stücke:
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VS-1EAH02-M3/I VS-1EAH02-M3/I Vishay General Semiconductor - Diodes Division vs-1eah02-m3.pdf Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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VS-1EAH02-M3/I VS-1EAH02-M3/I Vishay General Semiconductor - Diodes Division vs-1eah02-m3.pdf Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 13990 Stücke:
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VS-5EAH02HM3/I VS-5EAH02HM3/I Vishay General Semiconductor - Diodes Division vs-5eah02hm3.pdf Description: 5A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 14000 Stücke
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VS-5EAH02HM3/I VS-5EAH02HM3/I Vishay General Semiconductor - Diodes Division vs-5eah02hm3.pdf Description: 5A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 13900 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.13 EUR
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500+0.52 EUR
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1N6295AHE3_B/C 1N6295AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: 1.5KW,100V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2800 Stücke
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SMBG13A-E3/52 SMBG13A-E3/52 Vishay General Semiconductor - Diodes Division smbg.pdf Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 2250 Stücke:
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750+1.07 EUR
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SMBG13A-E3/52 SMBG13A-E3/52 Vishay General Semiconductor - Diodes Division smbg.pdf Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 2949 Stücke:
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BZX84B11-HE3_A-08 BZX84B11-HE3_A-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 11V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B11-HE3_A-18 BZX84B11-HE3_A-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 11V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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SMCJ24CAHE3_A/H SMCJ24CAHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 38.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1700 Stücke:
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850+0.88 EUR
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SMCJ24CAHE3_A/H SMCJ24CAHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 38.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2335 Stücke:
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8+2.89 EUR
12+1.82 EUR
50+1.37 EUR
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SMCJ24AHM3_A/I SMCJ24AHM3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B75-HE3_A-08 BZT52B75-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 75V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B7V5-HE3_A-08 BZT52B7V5-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 7.5V 300MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B75-HE3_A-18 BZT52B75-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 75V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B7V5-HE3_A-18 BZT52B7V5-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 7.5V 300MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB1645HM3/I MBRB1645HM3/I Vishay General Semiconductor - Diodes Division mbrf16xx.pdf Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
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MBRB1645-M3/I MBRB1645-M3/I Vishay General Semiconductor - Diodes Division mbrf16xx.pdf Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SA16CA-E3/54 SA16CA-E3/54 Vishay General Semiconductor - Diodes Division sa5a.pdf Description: TVS DIODE 16VWM 26VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.2A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 500W
Power Line Protection: No
Produkt ist nicht verfügbar
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SA16CA-E3/54 SA16CA-E3/54 Vishay General Semiconductor - Diodes Division sa5a.pdf Description: TVS DIODE 16VWM 26VC DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.2A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 500W
Power Line Protection: No
auf Bestellung 1961 Stücke:
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11+1.96 EUR
18+1.23 EUR
50+0.9 EUR
100+0.8 EUR
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3N246-E4/72 3N246-E4/72 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M, 3N246_thru_52.pdf Description: BRIDGE RECT 1PHASE 50V 1.5A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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TPC15AHM3_A/I TPC6.8A_-_TPC51A.pdf
TPC15AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12.8VWM 21.2VC TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 70.8A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TPC16AHM3_A/I TPC6.8A_-_TPC51A.pdf
TPC16AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13.6VWM 22.5VC TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 66.7A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TPC18AHM3_A/I TPC6.8A_-_TPC51A.pdf
TPC18AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.3VWM 25.2VC TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TPC12AHM3_A/H TPC6.8A_-_TPC51A.pdf
TPC12AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 16.7VC TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C16-HE3-08 bzt52.pdf
BZT52C16-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C16-HE3-08 bzt52.pdf
BZT52C16-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 410MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 159 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
68+0.31 EUR
108+0.19 EUR
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BZT52C16-HE3_A-18 bzt52.pdf
BZT52C16-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C16-HE3_A-08 bzt52.pdf
BZT52C16-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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T15B12AHM3/I t15b12athrut15b51a.pdf
T15B12AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 17VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 91.2A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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T15B12AHM3/I t15b12athrut15b51a.pdf
T15B12AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 17VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 91.2A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3160 Stücke:
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AnzahlPrivatkunde
10+2.26 EUR
15+1.42 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.65 EUR
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VS-72CPQ030-N3 VS-72CPQ030PbF%2CN3.pdf
VS-72CPQ030-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 35A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.9 mA @ 30 V
auf Bestellung 1286 Stücke:
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4+6.5 EUR
25+5.64 EUR
100+4.99 EUR
500+4.94 EUR
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VS-1EAH02HM3/I vs-1eah02hm3.pdf
VS-1EAH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14000+0.18 EUR
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VS-1EAH02HM3/I vs-1eah02hm3.pdf
VS-1EAH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
36+0.58 EUR
100+0.36 EUR
500+0.32 EUR
1000+0.23 EUR
2000+0.2 EUR
5000+0.19 EUR
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VS-2EAH02-M3/I vs-2eah02-m3.pdf
VS-2EAH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 14000 Stücke:
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AnzahlPrivatkunde
14000+0.19 EUR
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VS-2EAH02-M3/I vs-2eah02-m3.pdf
VS-2EAH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 14000 Stücke:
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AnzahlPrivatkunde
27+0.8 EUR
34+0.62 EUR
100+0.37 EUR
500+0.35 EUR
1000+0.24 EUR
2000+0.21 EUR
5000+0.2 EUR
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VS-3EAH02-M3/I vs-3eah02-m3.pdf
VS-3EAH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 14000 Stücke:
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14000+0.19 EUR
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VS-3EAH02-M3/I vs-3eah02-m3.pdf
VS-3EAH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
33+0.65 EUR
100+0.39 EUR
500+0.36 EUR
1000+0.25 EUR
2000+0.23 EUR
5000+0.21 EUR
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VS-3EAH02-M3/H vs-3eah02-m3.pdf
VS-3EAH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
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VS-3EAH02-M3/H vs-3eah02-m3.pdf
VS-3EAH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 4871 Stücke:
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AnzahlPrivatkunde
26+0.82 EUR
39+0.54 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
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VS-2EAH02HM3/I vs-2eah02hm3.pdf
VS-2EAH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14000+0.24 EUR
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VS-2EAH02HM3/I vs-2eah02hm3.pdf
VS-2EAH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
28+0.77 EUR
100+0.46 EUR
500+0.43 EUR
1000+0.3 EUR
2000+0.27 EUR
5000+0.26 EUR
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VS-3EAH02HM3/I vs-3eah02hm3.pdf
VS-3EAH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14000+0.24 EUR
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VS-3EAH02HM3/I vs-3eah02hm3.pdf
VS-3EAH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
32+0.68 EUR
100+0.46 EUR
500+0.37 EUR
1000+0.3 EUR
2000+0.26 EUR
5000+0.25 EUR
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VS-3EAH02HM3/H vs-3eah02hm3.pdf
VS-3EAH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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VS-3EAH02HM3/H vs-3eah02hm3.pdf
VS-3EAH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 2561 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
33+0.65 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
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VS-2EAH02HM3/H vs-2eah02hm3.pdf
VS-2EAH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3500+0.27 EUR
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VS-2EAH02HM3/H vs-2eah02hm3.pdf
VS-2EAH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
28+0.77 EUR
100+0.46 EUR
500+0.43 EUR
1000+0.3 EUR
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VS-2EAH02-M3/H vs-2eah02-m3.pdf
VS-2EAH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3500+0.27 EUR
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VS-2EAH02-M3/H vs-2eah02-m3.pdf
VS-2EAH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 3800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1.02 EUR
27+0.8 EUR
100+0.48 EUR
500+0.44 EUR
1000+0.3 EUR
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VS-5EAH02-M3/I vs-5eah02-m3.pdf
VS-5EAH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 5A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14000+0.33 EUR
Mindestbestellmenge: 14000 Stücke
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VS-5EAH02-M3/I vs-5eah02-m3.pdf
VS-5EAH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 5A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.13 EUR
22+0.96 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.43 EUR
2000+0.38 EUR
5000+0.36 EUR
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VS-5EAH02HM3/H vs-5eah02hm3.pdf
VS-5EAH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 5A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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VS-5EAH02HM3/H vs-5eah02hm3.pdf
VS-5EAH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 5A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3011 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.3 EUR
26+0.82 EUR
100+0.67 EUR
500+0.51 EUR
1000+0.46 EUR
Mindestbestellmenge: 17 Stücke
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VS-5EAH02-M3/H vs-5eah02-m3.pdf
VS-5EAH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 5A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-5EAH02-M3/H vs-5eah02-m3.pdf
VS-5EAH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 5A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
auf Bestellung 2508 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.05 EUR
30+0.7 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
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VS-1EAH02HM3/H vs-1eah02hm3.pdf
VS-1EAH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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VS-1EAH02HM3/H vs-1eah02hm3.pdf
VS-1EAH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 2708 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
46+0.46 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.25 EUR
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VS-1EAH02-M3/H vs-1eah02-m3.pdf
VS-1EAH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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VS-1EAH02-M3/H vs-1eah02-m3.pdf
VS-1EAH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 3770 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
36+0.6 EUR
100+0.36 EUR
500+0.33 EUR
1000+0.23 EUR
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VS-1EAH02-M3/I vs-1eah02-m3.pdf
VS-1EAH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 14000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-1EAH02-M3/I vs-1eah02-m3.pdf
VS-1EAH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 13990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.86 EUR
35+0.6 EUR
100+0.3 EUR
500+0.26 EUR
1000+0.2 EUR
2000+0.19 EUR
5000+0.18 EUR
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VS-5EAH02HM3/I vs-5eah02hm3.pdf
VS-5EAH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 5A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-5EAH02HM3/I vs-5eah02hm3.pdf
VS-5EAH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 5A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 13900 Stücke:
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AnzahlPrivatkunde
19+1.13 EUR
22+0.96 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.43 EUR
2000+0.38 EUR
5000+0.36 EUR
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1N6295AHE3_B/C 15ke.pdf
1N6295AHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1.5KW,100V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBG13A-E3/52 smbg.pdf
SMBG13A-E3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 2250 Stücke:
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750+1.07 EUR
2250+0.93 EUR
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SMBG13A-E3/52 smbg.pdf
SMBG13A-E3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 2949 Stücke:
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7+3.37 EUR
10+2.13 EUR
50+1.59 EUR
100+1.43 EUR
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BZX84B11-HE3_A-08 bzx84_series.pdf
BZX84B11-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B11-HE3_A-18 bzx84_series.pdf
BZX84B11-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ24CAHE3_A/H smcj.pdf
SMCJ24CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 38.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
850+0.88 EUR
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SMCJ24CAHE3_A/H smcj.pdf
SMCJ24CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 38.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2335 Stücke:
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8+2.89 EUR
12+1.82 EUR
50+1.37 EUR
100+1.21 EUR
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SMCJ24AHM3_A/I smcj.pdf
SMCJ24AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B75-HE3_A-08 bzt52_series.pdf
BZT52B75-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B7V5-HE3_A-08 bzt52.pdf
BZT52B7V5-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 300MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B75-HE3_A-18 bzt52_series.pdf
BZT52B75-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B7V5-HE3_A-18 bzt52.pdf
BZT52B7V5-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 300MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB1645HM3/I mbrf16xx.pdf
MBRB1645HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.49 EUR
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MBRB1645-M3/I mbrf16xx.pdf
MBRB1645-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SA16CA-E3/54 sa5a.pdf
SA16CA-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 26VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.2A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 500W
Power Line Protection: No
Produkt ist nicht verfügbar
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SA16CA-E3/54 sa5a.pdf
SA16CA-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 26VC DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.2A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 500W
Power Line Protection: No
auf Bestellung 1961 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.96 EUR
18+1.23 EUR
50+0.9 EUR
100+0.8 EUR
500+0.62 EUR
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3N246-E4/72 KBP005M_thru_10M, 3N246_thru_52.pdf
3N246-E4/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 1.5A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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