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BYG22DHE3_A/I BYG22DHE3_A/I Vishay General Semiconductor - Diodes Division byg22a.pdf Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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BZX84B33-HE3_A-08 BZX84B33-HE3_A-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 33V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BZX84B33-HE3_A-18 BZX84B33-HE3_A-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 33V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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SEP4512-M3/P SEP4512-M3/P Vishay General Semiconductor - Diodes Division sep4512.pdf Description: DIODE ARRAY GP 1200V 45A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
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SEP4512HM3/P Vishay General Semiconductor - Diodes Division sep4512.pdf Description: DIODE ARRAY GP 1200V 45A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
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SM5S12CAHM3/I SM5S12CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: TVS DIODE 12VWM 19.9VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 181A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM5S12CAHM3/I SM5S12CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: TVS DIODE 12VWM 19.9VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 181A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZX84C4V3-E3-18 BZX84C4V3-E3-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 4.3V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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P4SMA510AHM3_B/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 434VWM 698VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 430mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VS-30MQ040-M3/5AT VS-30MQ040-M3/5AT Vishay General Semiconductor - Diodes Division vs-30mq040m.pdf Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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VS-30MQ040-M3/5AT VS-30MQ040-M3/5AT Vishay General Semiconductor - Diodes Division vs-30mq040m.pdf Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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VSSAF3M10-M3/H Vishay General Semiconductor - Diodes Division vssaf3m10.pdf Description: DIODE SCHOTTKY 100V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 364pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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VSSAF3M10-M3/H Vishay General Semiconductor - Diodes Division vssaf3m10.pdf Description: DIODE SCHOTTKY 100V 3A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 364pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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TPC10AHM3_A/I TPC10AHM3_A/I Vishay General Semiconductor - Diodes Division TPC6.8A_-_TPC51A.pdf Description: TVS DIODE 8.55VWM 14.5VC TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TPC15AHM3_A/I TPC15AHM3_A/I Vishay General Semiconductor - Diodes Division TPC6.8A_-_TPC51A.pdf Description: TVS DIODE 12.8VWM 21.2VC TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 70.8A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TPC16AHM3_A/I TPC16AHM3_A/I Vishay General Semiconductor - Diodes Division TPC6.8A_-_TPC51A.pdf Description: TVS DIODE 13.6VWM 22.5VC TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 66.7A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TPC18AHM3_A/I TPC18AHM3_A/I Vishay General Semiconductor - Diodes Division TPC6.8A_-_TPC51A.pdf Description: TVS DIODE 15.3VWM 25.2VC TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TPC12AHM3_A/H TPC12AHM3_A/H Vishay General Semiconductor - Diodes Division TPC6.8A_-_TPC51A.pdf Description: TVS DIODE 10.2VWM 16.7VC TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZT52C16-HE3-08 BZT52C16-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 16V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
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BZT52C16-HE3-08 BZT52C16-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 16V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
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BZT52C16-HE3_A-18 BZT52C16-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 16V 300MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
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BZT52C16-HE3_A-08 BZT52C16-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 16V 300MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
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T15B12AHM3/I T15B12AHM3/I Vishay General Semiconductor - Diodes Division t15b12athrut15b51a.pdf Description: TVS DIODE 10.2VWM 17VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 91.2A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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T15B12AHM3/I T15B12AHM3/I Vishay General Semiconductor - Diodes Division t15b12athrut15b51a.pdf Description: TVS DIODE 10.2VWM 17VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 91.2A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VS-72CPQ030-N3 VS-72CPQ030-N3 Vishay General Semiconductor - Diodes Division VS-72CPQ030PbF%2CN3.pdf Description: DIODE ARR SCHOTT 30V 35A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.9 mA @ 30 V
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VS-1EAH02HM3/I VS-1EAH02HM3/I Vishay General Semiconductor - Diodes Division vs-1eah02hm3.pdf Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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VS-1EAH02HM3/I VS-1EAH02HM3/I Vishay General Semiconductor - Diodes Division vs-1eah02hm3.pdf Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.75 EUR
36+0.58 EUR
100+0.36 EUR
500+0.32 EUR
1000+0.23 EUR
2000+0.2 EUR
5000+0.19 EUR
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VS-2EAH02-M3/I VS-2EAH02-M3/I Vishay General Semiconductor - Diodes Division vs-2eah02-m3.pdf Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 14000 Stücke:
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14000+0.19 EUR
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VS-2EAH02-M3/I VS-2EAH02-M3/I Vishay General Semiconductor - Diodes Division vs-2eah02-m3.pdf Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.8 EUR
34+0.62 EUR
100+0.37 EUR
500+0.35 EUR
1000+0.24 EUR
2000+0.21 EUR
5000+0.2 EUR
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VS-3EAH02-M3/I VS-3EAH02-M3/I Vishay General Semiconductor - Diodes Division vs-3eah02-m3.pdf Description: 3A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
14000+0.19 EUR
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VS-3EAH02-M3/I VS-3EAH02-M3/I Vishay General Semiconductor - Diodes Division vs-3eah02-m3.pdf Description: 3A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.83 EUR
33+0.65 EUR
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500+0.36 EUR
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2000+0.23 EUR
5000+0.21 EUR
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VS-3EAH02-M3/H VS-3EAH02-M3/H Vishay General Semiconductor - Diodes Division vs-3eah02-m3.pdf Description: DIODE STANDARD 200V 3A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
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VS-3EAH02-M3/H VS-3EAH02-M3/H Vishay General Semiconductor - Diodes Division vs-3eah02-m3.pdf Description: DIODE STANDARD 200V 3A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 4871 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.82 EUR
39+0.54 EUR
100+0.43 EUR
500+0.32 EUR
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VS-2EAH02HM3/I VS-2EAH02HM3/I Vishay General Semiconductor - Diodes Division vs-2eah02hm3.pdf Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
14000+0.24 EUR
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VS-2EAH02HM3/I VS-2EAH02HM3/I Vishay General Semiconductor - Diodes Division vs-2eah02hm3.pdf Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
28+0.77 EUR
100+0.46 EUR
500+0.43 EUR
1000+0.3 EUR
2000+0.27 EUR
5000+0.26 EUR
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VS-3EAH02HM3/I VS-3EAH02HM3/I Vishay General Semiconductor - Diodes Division vs-3eah02hm3.pdf Description: 3A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
14000+0.24 EUR
Mindestbestellmenge: 14000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-3EAH02HM3/I VS-3EAH02HM3/I Vishay General Semiconductor - Diodes Division vs-3eah02hm3.pdf Description: 3A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.8 EUR
32+0.68 EUR
100+0.46 EUR
500+0.37 EUR
1000+0.3 EUR
2000+0.26 EUR
5000+0.25 EUR
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VS-3EAH02HM3/H VS-3EAH02HM3/H Vishay General Semiconductor - Diodes Division vs-3eah02hm3.pdf Description: DIODE STANDARD 200V 3A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
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VS-3EAH02HM3/H VS-3EAH02HM3/H Vishay General Semiconductor - Diodes Division vs-3eah02hm3.pdf Description: DIODE STANDARD 200V 3A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 2561 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
33+0.65 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 22 Stücke
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VS-2EAH02HM3/H VS-2EAH02HM3/H Vishay General Semiconductor - Diodes Division vs-2eah02hm3.pdf Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
3500+0.27 EUR
Mindestbestellmenge: 3500 Stücke
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VS-2EAH02HM3/H VS-2EAH02HM3/H Vishay General Semiconductor - Diodes Division vs-2eah02hm3.pdf Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3800 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
28+0.77 EUR
100+0.46 EUR
500+0.43 EUR
1000+0.3 EUR
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VS-2EAH02-M3/H VS-2EAH02-M3/H Vishay General Semiconductor - Diodes Division vs-2eah02-m3.pdf Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
3500+0.27 EUR
Mindestbestellmenge: 3500 Stücke
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VS-2EAH02-M3/H VS-2EAH02-M3/H Vishay General Semiconductor - Diodes Division vs-2eah02-m3.pdf Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 3800 Stücke:
Lieferzeit 10-14 Tag (e)
21+1.02 EUR
27+0.8 EUR
100+0.48 EUR
500+0.44 EUR
1000+0.3 EUR
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VS-5EAH02-M3/I VS-5EAH02-M3/I Vishay General Semiconductor - Diodes Division vs-5eah02-m3.pdf Description: 5A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
auf Bestellung 14000 Stücke:
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14000+0.33 EUR
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VS-5EAH02-M3/I VS-5EAH02-M3/I Vishay General Semiconductor - Diodes Division vs-5eah02-m3.pdf Description: 5A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.13 EUR
22+0.96 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.43 EUR
2000+0.38 EUR
5000+0.36 EUR
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VS-5EAH02HM3/H VS-5EAH02HM3/H Vishay General Semiconductor - Diodes Division vs-5eah02hm3.pdf Description: DIODE STANDARD 200V 5A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
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VS-5EAH02HM3/H VS-5EAH02HM3/H Vishay General Semiconductor - Diodes Division vs-5eah02hm3.pdf Description: DIODE STANDARD 200V 5A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3011 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.3 EUR
26+0.82 EUR
100+0.67 EUR
500+0.51 EUR
1000+0.46 EUR
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VS-5EAH02-M3/H VS-5EAH02-M3/H Vishay General Semiconductor - Diodes Division vs-5eah02-m3.pdf Description: DIODE STANDARD 200V 5A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-5EAH02-M3/H VS-5EAH02-M3/H Vishay General Semiconductor - Diodes Division vs-5eah02-m3.pdf Description: DIODE STANDARD 200V 5A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
auf Bestellung 2508 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.05 EUR
30+0.7 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
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VS-1EAH02HM3/H VS-1EAH02HM3/H Vishay General Semiconductor - Diodes Division vs-1eah02hm3.pdf Description: DIODE STANDARD 200V 1A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
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VS-1EAH02HM3/H VS-1EAH02HM3/H Vishay General Semiconductor - Diodes Division vs-1eah02hm3.pdf Description: DIODE STANDARD 200V 1A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 2708 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.69 EUR
46+0.46 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.25 EUR
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VS-1EAH02-M3/H VS-1EAH02-M3/H Vishay General Semiconductor - Diodes Division vs-1eah02-m3.pdf Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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VS-1EAH02-M3/H VS-1EAH02-M3/H Vishay General Semiconductor - Diodes Division vs-1eah02-m3.pdf Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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VS-1EAH02-M3/I VS-1EAH02-M3/I Vishay General Semiconductor - Diodes Division vs-1eah02-m3.pdf Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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VS-1EAH02-M3/I VS-1EAH02-M3/I Vishay General Semiconductor - Diodes Division vs-1eah02-m3.pdf Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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VS-5EAH02HM3/I VS-5EAH02HM3/I Vishay General Semiconductor - Diodes Division vs-5eah02hm3.pdf Description: 5A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Qualification: AEC-Q101
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VS-5EAH02HM3/I VS-5EAH02HM3/I Vishay General Semiconductor - Diodes Division vs-5eah02hm3.pdf Description: 5A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Qualification: AEC-Q101
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1N6295AHE3_B/C 1N6295AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: 1.5KW,100V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBG13A-E3/52 SMBG13A-E3/52 Vishay General Semiconductor - Diodes Division smbg.pdf Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBG13A-E3/52 SMBG13A-E3/52 Vishay General Semiconductor - Diodes Division smbg.pdf Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
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BYG22DHE3_A/I byg22a.pdf
BYG22DHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B33-HE3_A-08 bzx84_series.pdf
BZX84B33-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BZX84B33-HE3_A-18 bzx84_series.pdf
BZX84B33-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SEP4512-M3/P sep4512.pdf
SEP4512-M3/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 1200V 45A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 390 Stücke:
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SEP4512HM3/P sep4512.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 1200V 45A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 475 Stücke:
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SM5S12CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S12CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 181A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM5S12CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S12CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 181A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZX84C4V3-E3-18 bzx84_series.pdf
BZX84C4V3-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Produkt ist nicht verfügbar
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P4SMA510AHM3_B/H p4sma.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 434VWM 698VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 430mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5400 Stücke:
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VS-30MQ040-M3/5AT vs-30mq040m.pdf
VS-30MQ040-M3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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VS-30MQ040-M3/5AT vs-30mq040m.pdf
VS-30MQ040-M3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 3654 Stücke:
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VSSAF3M10-M3/H vssaf3m10.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 364pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
auf Bestellung 7000 Stücke:
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VSSAF3M10-M3/H vssaf3m10.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 364pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
auf Bestellung 7873 Stücke:
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TPC10AHM3_A/I TPC6.8A_-_TPC51A.pdf
TPC10AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.55VWM 14.5VC TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TPC15AHM3_A/I TPC6.8A_-_TPC51A.pdf
TPC15AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12.8VWM 21.2VC TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 70.8A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TPC16AHM3_A/I TPC6.8A_-_TPC51A.pdf
TPC16AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13.6VWM 22.5VC TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 66.7A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TPC18AHM3_A/I TPC6.8A_-_TPC51A.pdf
TPC18AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.3VWM 25.2VC TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TPC12AHM3_A/H TPC6.8A_-_TPC51A.pdf
TPC12AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 16.7VC TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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BZT52C16-HE3-08 bzt52.pdf
BZT52C16-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C16-HE3-08 bzt52.pdf
BZT52C16-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
76+0.27 EUR
121+0.18 EUR
500+0.13 EUR
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BZT52C16-HE3_A-18 bzt52.pdf
BZT52C16-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 300MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BZT52C16-HE3_A-08 bzt52.pdf
BZT52C16-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 300MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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T15B12AHM3/I t15b12athrut15b51a.pdf
T15B12AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 17VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 91.2A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3200+0.48 EUR
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T15B12AHM3/I t15b12athrut15b51a.pdf
T15B12AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 17VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 91.2A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.43 EUR
19+1.12 EUR
100+0.77 EUR
500+0.62 EUR
1000+0.56 EUR
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VS-72CPQ030-N3 VS-72CPQ030PbF%2CN3.pdf
VS-72CPQ030-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 35A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.9 mA @ 30 V
auf Bestellung 1286 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.5 EUR
25+5.64 EUR
100+4.99 EUR
500+4.94 EUR
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VS-1EAH02HM3/I vs-1eah02hm3.pdf
VS-1EAH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14000+0.18 EUR
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VS-1EAH02HM3/I vs-1eah02hm3.pdf
VS-1EAH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
36+0.58 EUR
100+0.36 EUR
500+0.32 EUR
1000+0.23 EUR
2000+0.2 EUR
5000+0.19 EUR
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VS-2EAH02-M3/I vs-2eah02-m3.pdf
VS-2EAH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14000+0.19 EUR
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VS-2EAH02-M3/I vs-2eah02-m3.pdf
VS-2EAH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
34+0.62 EUR
100+0.37 EUR
500+0.35 EUR
1000+0.24 EUR
2000+0.21 EUR
5000+0.2 EUR
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VS-3EAH02-M3/I vs-3eah02-m3.pdf
VS-3EAH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14000+0.19 EUR
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VS-3EAH02-M3/I vs-3eah02-m3.pdf
VS-3EAH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
33+0.65 EUR
100+0.39 EUR
500+0.36 EUR
1000+0.25 EUR
2000+0.23 EUR
5000+0.21 EUR
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VS-3EAH02-M3/H vs-3eah02-m3.pdf
VS-3EAH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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VS-3EAH02-M3/H vs-3eah02-m3.pdf
VS-3EAH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 4871 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
39+0.54 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
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VS-2EAH02HM3/I vs-2eah02hm3.pdf
VS-2EAH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14000+0.24 EUR
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VS-2EAH02HM3/I vs-2eah02hm3.pdf
VS-2EAH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
28+0.77 EUR
100+0.46 EUR
500+0.43 EUR
1000+0.3 EUR
2000+0.27 EUR
5000+0.26 EUR
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VS-3EAH02HM3/I vs-3eah02hm3.pdf
VS-3EAH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14000+0.24 EUR
Mindestbestellmenge: 14000 Stücke
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VS-3EAH02HM3/I vs-3eah02hm3.pdf
VS-3EAH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
32+0.68 EUR
100+0.46 EUR
500+0.37 EUR
1000+0.3 EUR
2000+0.26 EUR
5000+0.25 EUR
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VS-3EAH02HM3/H vs-3eah02hm3.pdf
VS-3EAH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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VS-3EAH02HM3/H vs-3eah02hm3.pdf
VS-3EAH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 2561 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
33+0.65 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 22 Stücke
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VS-2EAH02HM3/H vs-2eah02hm3.pdf
VS-2EAH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3500+0.27 EUR
Mindestbestellmenge: 3500 Stücke
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VS-2EAH02HM3/H vs-2eah02hm3.pdf
VS-2EAH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3800 Stücke:
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28+0.77 EUR
100+0.46 EUR
500+0.43 EUR
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VS-2EAH02-M3/H vs-2eah02-m3.pdf
VS-2EAH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 3500 Stücke:
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3500+0.27 EUR
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VS-2EAH02-M3/H vs-2eah02-m3.pdf
VS-2EAH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 3800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
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27+0.8 EUR
100+0.48 EUR
500+0.44 EUR
1000+0.3 EUR
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VS-5EAH02-M3/I vs-5eah02-m3.pdf
VS-5EAH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 5A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
auf Bestellung 14000 Stücke:
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AnzahlPrivatkunde
14000+0.33 EUR
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VS-5EAH02-M3/I vs-5eah02-m3.pdf
VS-5EAH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 5A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.13 EUR
22+0.96 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.43 EUR
2000+0.38 EUR
5000+0.36 EUR
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VS-5EAH02HM3/H vs-5eah02hm3.pdf
VS-5EAH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 5A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-5EAH02HM3/H vs-5eah02hm3.pdf
VS-5EAH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 5A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3011 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.3 EUR
26+0.82 EUR
100+0.67 EUR
500+0.51 EUR
1000+0.46 EUR
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VS-5EAH02-M3/H vs-5eah02-m3.pdf
VS-5EAH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 5A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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VS-5EAH02-M3/H vs-5eah02-m3.pdf
VS-5EAH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 5A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
auf Bestellung 2508 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.05 EUR
30+0.7 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
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VS-1EAH02HM3/H vs-1eah02hm3.pdf
VS-1EAH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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VS-1EAH02HM3/H vs-1eah02hm3.pdf
VS-1EAH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 2708 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
46+0.46 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.25 EUR
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VS-1EAH02-M3/H vs-1eah02-m3.pdf
VS-1EAH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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VS-1EAH02-M3/H vs-1eah02-m3.pdf
VS-1EAH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 3770 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
36+0.6 EUR
100+0.36 EUR
500+0.33 EUR
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VS-1EAH02-M3/I vs-1eah02-m3.pdf
VS-1EAH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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VS-1EAH02-M3/I vs-1eah02-m3.pdf
VS-1EAH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 13990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.86 EUR
35+0.6 EUR
100+0.3 EUR
500+0.26 EUR
1000+0.2 EUR
2000+0.19 EUR
5000+0.18 EUR
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VS-5EAH02HM3/I vs-5eah02hm3.pdf
VS-5EAH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 5A, 200V, FRED HYPERFAST RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-5EAH02HM3/I vs-5eah02hm3.pdf
VS-5EAH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 5A, 200V, FRED HYPERFAST RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 13900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.13 EUR
22+0.96 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.43 EUR
2000+0.38 EUR
5000+0.36 EUR
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1N6295AHE3_B/C 15ke.pdf
1N6295AHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1.5KW,100V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBG13A-E3/52 smbg.pdf
SMBG13A-E3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 2250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+1.04 EUR
1500+0.95 EUR
2250+0.92 EUR
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SMBG13A-E3/52 smbg.pdf
SMBG13A-E3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 2949 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.28 EUR
11+2.08 EUR
100+1.39 EUR
Mindestbestellmenge: 7 Stücke
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