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BAT54C-G3-18 BAT54C-G3-18 Vishay General Semiconductor - Diodes Division bat54-g_bat54a-g_bat54c-g_bat54s-g.pdf Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 6298 Stücke:
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56+0.32 EUR
82+0.22 EUR
109+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.089 EUR
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1.5KE170CAHE3/51 1.5KE170CAHE3/51 Vishay General Semiconductor - Diodes Division 1.5KE6.8A _-_1.5KE540A,1N6267A-1N6303A_Rev10-11-16.pdf Description: TVS DIODE 145VWM 234VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-40HF80M VS-40HF80M Vishay General Semiconductor - Diodes Division vs-40hfrseries.pdf Description: DIODE GEN PURP 800V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
auf Bestellung 55 Stücke:
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V12PM45-M3/H V12PM45-M3/H Vishay General Semiconductor - Diodes Division v12pm45.pdf Description: DIODE SCHOTTKY 45V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2350pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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V12PM45-M3/H V12PM45-M3/H Vishay General Semiconductor - Diodes Division v12pm45.pdf Description: DIODE SCHOTTKY 45V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2350pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 6435 Stücke:
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VS-16EDH06-M3/I VS-16EDH06-M3/I Vishay General Semiconductor - Diodes Division vs-16edh06-m3.pdf Description: DIODE GEN PURP 600V 16A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 16 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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VS-16EDH06-M3/I VS-16EDH06-M3/I Vishay General Semiconductor - Diodes Division vs-16edh06-m3.pdf Description: DIODE GEN PURP 600V 16A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 16 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 1990 Stücke:
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VS-16EDH06HM3/I VS-16EDH06HM3/I Vishay General Semiconductor - Diodes Division vs-16edh06hm3.pdf Description: DIODE GEN PURP 600V 16A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 43 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 16 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-30CDH06-M3/I VS-30CDH06-M3/I Vishay General Semiconductor - Diodes Division vs-30cdh06-m3.pdf Description: DIODE ARRAY GP 600V 15A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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VS-30CDH06HM3/I VS-30CDH06HM3/I Vishay General Semiconductor - Diodes Division vs-30cdh06hm3.pdf Description: DIODE ARRAY GP 600V 15A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-MBRD340TR-M3 VS-MBRD340TR-M3 Vishay General Semiconductor - Diodes Division vs-mbrd320p.pdf Description: DIODE SCHOTTKY 40V 3A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
auf Bestellung 6000 Stücke:
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VS-MBRD340TR-M3 VS-MBRD340TR-M3 Vishay General Semiconductor - Diodes Division vs-mbrd320p.pdf Description: DIODE SCHOTTKY 40V 3A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
auf Bestellung 7437 Stücke:
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30WQ04FNTR 30WQ04FNTR Vishay General Semiconductor - Diodes Division 30WQ04FN.pdf Description: DIODE SCHOTTKY 40V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
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VS-3C05ET12S2L-M3 VS-3C05ET12S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c05et12s2l-m3.pdf Description: DIODE SIL CARB 1200V 5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky - Single
Speed: No Recovery Time > 500mA (Io)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 20pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Max: 5 A
Power Dissipation (Max): 60 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Produkt ist nicht verfügbar
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VS-3C05ET12S2L-M3 VS-3C05ET12S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c05et12s2l-m3.pdf Description: DIODE SIL CARB 1200V 5A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky - Single
Speed: No Recovery Time > 500mA (Io)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 20pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Max: 5 A
Power Dissipation (Max): 60 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
auf Bestellung 796 Stücke:
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3+8.04 EUR
10+5.32 EUR
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VS-3C05ET12T-M3 VS-3C05ET12T-M3 Vishay General Semiconductor - Diodes Division vs-3c05et12t-m3.pdf Description: DIODE SIL CARB 1200V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Diode Type: Schottky - Single
Speed: No Recovery Time > 500mA (Io)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 20pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Max: 5 A
Power Dissipation (Max): 60 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
auf Bestellung 939 Stücke:
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500+3.04 EUR
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SM6T200CAHM3_B/H SM6T200CAHM3_B/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 171VWM 274VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T200CAHE3_B/H SM6T200CAHE3_B/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 171VWM 274VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM6T200CAHE3_B/I SM6T200CAHE3_B/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 171VWM 274VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T200CAHM3_B/I SM6T200CAHM3_B/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 171VWM 274VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMA6F15A-M3/6A SMA6F15A-M3/6A Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: TVS DIODE 15VWM 27.7VC DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
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SMA6F15A-M3/6A SMA6F15A-M3/6A Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: TVS DIODE 15VWM 27.7VC DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
auf Bestellung 442 Stücke:
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23+0.79 EUR
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T4F20AHM3/H T4F20AHM3/H Vishay General Semiconductor - Diodes Division t4f10a_t4f51a.pdf Description: TVS DIODE 17.1VWM 27.7V DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
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T4F20AHM3/H T4F20AHM3/H Vishay General Semiconductor - Diodes Division t4f10a_t4f51a.pdf Description: TVS DIODE 17.1VWM 27.7V DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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T4F20AHM3/I T4F20AHM3/I Vishay General Semiconductor - Diodes Division t4f10a_t4f51a.pdf Description: TVS DIODE 17.1VWM 27.7V DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
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10000+0.096 EUR
20000+0.094 EUR
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T4F20AHM3/I T4F20AHM3/I Vishay General Semiconductor - Diodes Division t4f10a_t4f51a.pdf Description: TVS DIODE 17.1VWM 27.7V DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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T6N20AHM3/I T6N20AHM3/I Vishay General Semiconductor - Diodes Division t6n12athrut6n51a.pdf Description: TVS DIODE 17.1VWM 27.7V DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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T6N20AHM3/I T6N20AHM3/I Vishay General Semiconductor - Diodes Division t6n12athrut6n51a.pdf Description: TVS DIODE 17.1VWM 27.7V DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TA6L20AHM3/H TA6L20AHM3/H Vishay General Semiconductor - Diodes Division ta6l6_8athruta6l51a.pdf Description: TVS DIODE 17.1VWM 27.7VC SMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: SlimSMAW (DO-221AD)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TA6L20AHM3/H TA6L20AHM3/H Vishay General Semiconductor - Diodes Division ta6l6_8athruta6l51a.pdf Description: TVS DIODE 17.1VWM 27.7VC SMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: SlimSMAW (DO-221AD)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TPSMC20AHE3_B/I Vishay General Semiconductor - Diodes Division tpsmc.pdf Description: TVS DIODE 17.1VWM 27.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 54.2A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TPSMC20AHE3_B/I Vishay General Semiconductor - Diodes Division tpsmc.pdf Description: TVS DIODE 17.1VWM 27.7VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 54.2A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3KASMC20AHM3_B/H 3KASMC20AHM3_B/H Vishay General Semiconductor - Diodes Division 3kasmc.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 92.6A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3KASMC20AHM3_B/H 3KASMC20AHM3_B/H Vishay General Semiconductor - Diodes Division 3kasmc.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 92.6A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SSA24-E3/5AT SSA24-E3/5AT Vishay General Semiconductor - Diodes Division ssa23l.pdf Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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SSA24-E3/5AT SSA24-E3/5AT Vishay General Semiconductor - Diodes Division ssa23l.pdf Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 4702 Stücke:
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VS-42HF120 VS-42HF120 Vishay General Semiconductor - Diodes Division vs-40hfrseries.pdf Description: DIODE GEN PURP 1.2KV 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
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VS-41HF120 VS-41HF120 Vishay General Semiconductor - Diodes Division vs-40hfrseries.pdf Description: DIODE GEN PURP 1.2KV 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Current - Reverse Leakage @ Vr: 9 mA @ 1200 V
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VS-40HF120M VS-40HF120M Vishay General Semiconductor - Diodes Division vs-40hfrseries.pdf Description: DIODE STANDARD 1200V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
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MMSZ5248B-HE3_A-08 MMSZ5248B-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 18V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
auf Bestellung 13860 Stücke:
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MMSZ4706-HE3_A-08 MMSZ4706-HE3_A-08 Vishay General Semiconductor - Diodes Division MMSZ4681_to_MMSZ4717_Rev2.0_2-18-20.pdf Description: DIODE ZENER 19V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14.4 V
Qualification: AEC-Q101
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MMSZ4706-HE3_A-18 MMSZ4706-HE3_A-18 Vishay General Semiconductor - Diodes Division MMSZ4681_to_MMSZ4717_Rev2.0_2-18-20.pdf Description: DIODE ZENER 19V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14.4 V
Qualification: AEC-Q101
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SS1P4LHM3/85A SS1P4LHM3/85A Vishay General Semiconductor - Diodes Division ss1p3l.pdf Description: DIODE SCHOTTKY 40V 1.5A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Qualification: AEC-Q101
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SS1P4LHM3/85A SS1P4LHM3/85A Vishay General Semiconductor - Diodes Division ss1p3l.pdf Description: DIODE SCHOTTKY 40V 1.5A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Qualification: AEC-Q101
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VS-12CWQ04FNTRL-M3 VS-12CWQ04FNTRL-M3 Vishay General Semiconductor - Diodes Division vs-12cwq04f.pdf Description: DIODE ARRAY SCHOTTKY 40V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 12 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Qualification: AEC-Q101
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VS-12CWQ04FNTRL-M3 VS-12CWQ04FNTRL-M3 Vishay General Semiconductor - Diodes Division vs-12cwq04f.pdf Description: DIODE ARRAY SCHOTTKY 40V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 12 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Qualification: AEC-Q101
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500+0.79 EUR
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SMBJ11AHE3_B/I SMBJ11AHE3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ11AHM3_B/I SMBJ11AHM3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ11AHE3_A/I SMBJ11AHE3_A/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 11VWM 18.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ11AHM3_B/H SMBJ11AHM3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ11AHE3_B/H SMBJ11AHE3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ11AHM3_A/I SMBJ11AHM3_A/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 11VWM 18.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ11AHE3_A/H SMBJ11AHE3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 11VWM 18.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ11AHM3_A/H SMBJ11AHM3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 11VWM 18.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VSKY02400603-G4-08 VSKY02400603-G4-08 Vishay General Semiconductor - Diodes Division vsky02400603.pdf Description: DIODE SCHOTT 40V 200MA CLP06032M
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: CLP0603-2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
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VSKY02400603-G4-08 VSKY02400603-G4-08 Vishay General Semiconductor - Diodes Division vsky02400603.pdf Description: DIODE SCHOTT 40V 200MA CLP06032M
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: CLP0603-2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 23629 Stücke:
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72+0.25 EUR
111+0.16 EUR
500+0.12 EUR
1000+0.099 EUR
2000+0.094 EUR
5000+0.087 EUR
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BZT52B15-HE3_A-08 BZT52B15-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 15V 300MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B15-HE3_A-18 BZT52B15-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 15V 300MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZD27C6V8P-HE3-08 BZD27C6V8P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 6.8V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
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3000+0.24 EUR
6000+0.22 EUR
9000+0.21 EUR
15000+0.2 EUR
21000+0.19 EUR
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BZD27C6V8P-HE3-08 BZD27C6V8P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 6.8V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 22442 Stücke:
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28+0.63 EUR
34+0.52 EUR
100+0.35 EUR
500+0.28 EUR
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BAT54C-G3-18 bat54-g_bat54a-g_bat54c-g_bat54s-g.pdf
BAT54C-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 6298 Stücke:
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Anzahl Preis
56+0.32 EUR
82+0.22 EUR
109+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.089 EUR
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1.5KE170CAHE3/51 1.5KE6.8A _-_1.5KE540A,1N6267A-1N6303A_Rev10-11-16.pdf
1.5KE170CAHE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 145VWM 234VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-40HF80M vs-40hfrseries.pdf
VS-40HF80M
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
auf Bestellung 55 Stücke:
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Anzahl Preis
1+31.24 EUR
10+27.53 EUR
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V12PM45-M3/H v12pm45.pdf
V12PM45-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2350pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 6000 Stücke:
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Anzahl Preis
1500+0.45 EUR
3000+0.42 EUR
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V12PM45-M3/H v12pm45.pdf
V12PM45-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2350pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 6435 Stücke:
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13+1.41 EUR
18+1.02 EUR
100+0.74 EUR
500+0.57 EUR
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VS-16EDH06-M3/I vs-16edh06-m3.pdf
VS-16EDH06-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 16 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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VS-16EDH06-M3/I vs-16edh06-m3.pdf
VS-16EDH06-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 16 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 1990 Stücke:
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Anzahl Preis
10+1.78 EUR
13+1.47 EUR
100+1.14 EUR
500+0.97 EUR
1000+0.79 EUR
Mindestbestellmenge: 10
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VS-16EDH06HM3/I vs-16edh06hm3.pdf
VS-16EDH06HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 43 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 16 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-30CDH06-M3/I vs-30cdh06-m3.pdf
VS-30CDH06-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 15A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Produkt ist nicht verfügbar
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VS-30CDH06HM3/I vs-30cdh06hm3.pdf
VS-30CDH06HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 15A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-MBRD340TR-M3 vs-mbrd320p.pdf
VS-MBRD340TR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
auf Bestellung 6000 Stücke:
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Anzahl Preis
2000+0.38 EUR
4000+0.33 EUR
6000+0.32 EUR
Mindestbestellmenge: 2000
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VS-MBRD340TR-M3 vs-mbrd320p.pdf
VS-MBRD340TR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
auf Bestellung 7437 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.46 EUR
19+0.93 EUR
100+0.65 EUR
500+0.5 EUR
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30WQ04FNTR 30WQ04FN.pdf
30WQ04FNTR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Produkt ist nicht verfügbar
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VS-3C05ET12S2L-M3 vs-3c05et12s2l-m3.pdf
VS-3C05ET12S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 1200V 5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky - Single
Speed: No Recovery Time > 500mA (Io)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 20pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Max: 5 A
Power Dissipation (Max): 60 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Produkt ist nicht verfügbar
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VS-3C05ET12S2L-M3 vs-3c05et12s2l-m3.pdf
VS-3C05ET12S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 1200V 5A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky - Single
Speed: No Recovery Time > 500mA (Io)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 20pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Max: 5 A
Power Dissipation (Max): 60 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
auf Bestellung 796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.04 EUR
10+5.32 EUR
100+3.78 EUR
Mindestbestellmenge: 3
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VS-3C05ET12T-M3 vs-3c05et12t-m3.pdf
VS-3C05ET12T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 1200V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Diode Type: Schottky - Single
Speed: No Recovery Time > 500mA (Io)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 20pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Max: 5 A
Power Dissipation (Max): 60 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
auf Bestellung 939 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.02 EUR
50+3.91 EUR
100+3.59 EUR
500+3.04 EUR
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SM6T200CAHM3_B/H sm6t.pdf
SM6T200CAHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 171VWM 274VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T200CAHE3_B/H sm6t.pdf
SM6T200CAHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 171VWM 274VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T200CAHE3_B/I sm6t.pdf
SM6T200CAHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 171VWM 274VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T200CAHM3_B/I sm6t.pdf
SM6T200CAHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 171VWM 274VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMA6F15A-M3/6A sma6f5.pdf
SMA6F15A-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 27.7VC DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMA6F15A-M3/6A sma6f5.pdf
SMA6F15A-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 27.7VC DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
auf Bestellung 442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
31+0.57 EUR
100+0.39 EUR
Mindestbestellmenge: 23
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T4F20AHM3/H t4f10a_t4f51a.pdf
T4F20AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7V DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
Mindestbestellmenge: 3000
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T4F20AHM3/H t4f10a_t4f51a.pdf
T4F20AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7V DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
41+0.44 EUR
100+0.26 EUR
500+0.15 EUR
Mindestbestellmenge: 27
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T4F20AHM3/I t4f10a_t4f51a.pdf
T4F20AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7V DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.096 EUR
20000+0.094 EUR
Mindestbestellmenge: 10000
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T4F20AHM3/I t4f10a_t4f51a.pdf
T4F20AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7V DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
55+0.32 EUR
125+0.14 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 38
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T6N20AHM3/I t6n12athrut6n51a.pdf
T6N20AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7V DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14000+0.21 EUR
Mindestbestellmenge: 14000
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T6N20AHM3/I t6n12athrut6n51a.pdf
T6N20AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7V DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
30+0.59 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.24 EUR
5000+0.23 EUR
Mindestbestellmenge: 24
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TA6L20AHM3/H ta6l6_8athruta6l51a.pdf
TA6L20AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7VC SMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: SlimSMAW (DO-221AD)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.25 EUR
Mindestbestellmenge: 3500
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TA6L20AHM3/H ta6l6_8athruta6l51a.pdf
TA6L20AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7VC SMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: SlimSMAW (DO-221AD)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6948 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
31+0.58 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 22
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TPSMC20AHE3_B/I tpsmc.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 54.2A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TPSMC20AHE3_B/I tpsmc.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 54.2A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
17+1.06 EUR
100+0.74 EUR
500+0.59 EUR
1000+0.54 EUR
Mindestbestellmenge: 12
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3KASMC20AHM3_B/H 3kasmc.pdf
3KASMC20AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 92.6A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
850+0.83 EUR
1700+0.77 EUR
Mindestbestellmenge: 850
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3KASMC20AHM3_B/H 3kasmc.pdf
3KASMC20AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 92.6A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.29 EUR
12+1.55 EUR
100+1.09 EUR
Mindestbestellmenge: 8
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SSA24-E3/5AT ssa23l.pdf
SSA24-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
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SSA24-E3/5AT ssa23l.pdf
SSA24-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 4702 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
41+0.43 EUR
100+0.29 EUR
500+0.24 EUR
1000+0.18 EUR
2000+0.17 EUR
Mindestbestellmenge: 28
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VS-42HF120 vs-40hfrseries.pdf
VS-42HF120
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.64 EUR
10+11.7 EUR
100+9.75 EUR
Mindestbestellmenge: 2
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VS-41HF120 vs-40hfrseries.pdf
VS-41HF120
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Current - Reverse Leakage @ Vr: 9 mA @ 1200 V
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.59 EUR
10+17.26 EUR
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VS-40HF120M vs-40hfrseries.pdf
VS-40HF120M
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
auf Bestellung 101 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.86 EUR
10+23.06 EUR
100+17.44 EUR
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MMSZ5248B-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5248B-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
auf Bestellung 13860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
52+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 33
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MMSZ4706-HE3_A-08 MMSZ4681_to_MMSZ4717_Rev2.0_2-18-20.pdf
MMSZ4706-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 19V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14.4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ4706-HE3_A-18 MMSZ4681_to_MMSZ4717_Rev2.0_2-18-20.pdf
MMSZ4706-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 19V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14.4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS1P4LHM3/85A ss1p3l.pdf
SS1P4LHM3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.5A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.19 EUR
Mindestbestellmenge: 10000
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SS1P4LHM3/85A ss1p3l.pdf
SS1P4LHM3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.5A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
29+0.62 EUR
100+0.37 EUR
500+0.34 EUR
1000+0.23 EUR
2000+0.22 EUR
5000+0.21 EUR
Mindestbestellmenge: 23
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VS-12CWQ04FNTRL-M3 vs-12cwq04f.pdf
VS-12CWQ04FNTRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 12 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-12CWQ04FNTRL-M3 vs-12cwq04f.pdf
VS-12CWQ04FNTRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 12 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
15+1.25 EUR
100+0.98 EUR
500+0.79 EUR
1000+0.7 EUR
Mindestbestellmenge: 10
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SMBJ11AHE3_B/I smbj.pdf
SMBJ11AHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ11AHM3_B/I smbj.pdf
SMBJ11AHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ11AHE3_A/I smbj.pdf
SMBJ11AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11VWM 18.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ11AHM3_B/H smbj.pdf
SMBJ11AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ11AHE3_B/H smbj.pdf
SMBJ11AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ11AHM3_A/I smbj.pdf
SMBJ11AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11VWM 18.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ11AHE3_A/H smbj.pdf
SMBJ11AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11VWM 18.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ11AHM3_A/H smbj.pdf
SMBJ11AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11VWM 18.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VSKY02400603-G4-08 vsky02400603.pdf
VSKY02400603-G4-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 40V 200MA CLP06032M
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: CLP0603-2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
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VSKY02400603-G4-08 vsky02400603.pdf
VSKY02400603-G4-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 40V 200MA CLP06032M
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: CLP0603-2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 23629 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
72+0.25 EUR
111+0.16 EUR
500+0.12 EUR
1000+0.099 EUR
2000+0.094 EUR
5000+0.087 EUR
Mindestbestellmenge: 50
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BZT52B15-HE3_A-08 bzt52.pdf
BZT52B15-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 300MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B15-HE3_A-18 bzt52.pdf
BZT52B15-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 300MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZD27C6V8P-HE3-08 bzd27series.pdf
BZD27C6V8P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.22 EUR
9000+0.21 EUR
15000+0.2 EUR
21000+0.19 EUR
Mindestbestellmenge: 3000
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BZD27C6V8P-HE3-08 bzd27series.pdf
BZD27C6V8P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 22442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
34+0.52 EUR
100+0.35 EUR
500+0.28 EUR
1000+0.24 EUR
Mindestbestellmenge: 28
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