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1N6273AHE3/51 1N6273AHE3/51 Vishay General Semiconductor - Diodes Division 1.5KE6.8A%20_-_1.5KE540A%2C1N6267A-1N6303A_Rev10-11-16.pdf Description: TVS DIODE 10.2VWM 16.7VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-16CTQ060STRL-M3 VS-16CTQ060STRL-M3 Vishay General Semiconductor - Diodes Division vs-16ctqs-m3series.pdf Description: DIODE ARRAY SCHOT 60V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 60 V
Qualification: AEC-Q101
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VS-16CTQ060STRL-M3 VS-16CTQ060STRL-M3 Vishay General Semiconductor - Diodes Division vs-16ctqs-m3series.pdf Description: DIODE ARRAY SCHOT 60V 8A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 60 V
Qualification: AEC-Q101
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30CTQ060-1 30CTQ060-1 Vishay General Semiconductor - Diodes Division 30CTQyyy%20Series.pdf Description: DIODE ARR SCHOTT 60V 15A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
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30CTQ060S 30CTQ060S Vishay General Semiconductor - Diodes Division 30CTQyyy%20Series.pdf description Description: DIODE ARR SCHOTT 60V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
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BZX384C20-HE3-08 BZX384C20-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Qualification: AEC-Q101
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BZX384C20-HE3-08 BZX384C20-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Qualification: AEC-Q101
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BZX384C20-G3-08 BZX384C20-G3-08 Vishay General Semiconductor - Diodes Division PdfFile_246575.pdf Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
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BZX384C20-G3-08 BZX384C20-G3-08 Vishay General Semiconductor - Diodes Division PdfFile_246575.pdf Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
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VS-MBRD650CTTRL-M3 VS-MBRD650CTTRL-M3 Vishay General Semiconductor - Diodes Division vs-mbrd650c.pdf Description: DIODE ARRAY SCHOTTKY 50V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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VS-MBRD650CTTRL-M3 VS-MBRD650CTTRL-M3 Vishay General Semiconductor - Diodes Division vs-mbrd650c.pdf Description: DIODE ARRAY SCHOTTKY 50V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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SA6.0CA-E3/54 SA6.0CA-E3/54 Vishay General Semiconductor - Diodes Division sa5a.pdf Description: TVS DIODE 6VWM 10.3VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48.5A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 500W
Power Line Protection: No
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SM5S36AHM3/I SM5S36AHM3/I Vishay General Semiconductor - Diodes Division sm5s.pdf Description: TVS DIODE 36VWM 58.1VC DO218AC
Packaging: Tape & Reel (TR)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM5S36AHM3/I SM5S36AHM3/I Vishay General Semiconductor - Diodes Division sm5s.pdf Description: TVS DIODE 36VWM 58.1VC DO218AC
Packaging: Cut Tape (CT)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1N4733A-T 1N4733A-T Vishay General Semiconductor - Diodes Division 1n4728a.pdf Description: DIODE ZENER 5.1V 1.3W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 550 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-3C04EV07T-M3/I VS-3C04EV07T-M3/I Vishay General Semiconductor - Diodes Division vs-3c04ev07t-m3.pdf Description: DIODE SIL CARB 650V 4A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Produkt ist nicht verfügbar
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VS-3C04EV07T-M3/I VS-3C04EV07T-M3/I Vishay General Semiconductor - Diodes Division vs-3c04ev07t-m3.pdf Description: DIODE SIL CARB 650V 4A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
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VS-3C06EV07T-M3/I VS-3C06EV07T-M3/I Vishay General Semiconductor - Diodes Division vs-3c06ev07t-m3.pdf Description: DIODE SIL CARB 650V 6A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 47 µA @ 650 V
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VS-3C06EV07T-M3/I VS-3C06EV07T-M3/I Vishay General Semiconductor - Diodes Division vs-3c06ev07t-m3.pdf Description: DIODE SIL CARB 650V 6A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 47 µA @ 650 V
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VS-3C10EV07T-M3/I VS-3C10EV07T-M3/I Vishay General Semiconductor - Diodes Division vs-3c10ev07t-m3.pdf Description: DIODE SIL CARB 650V 10A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
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VS-3C10EV07T-M3/I VS-3C10EV07T-M3/I Vishay General Semiconductor - Diodes Division vs-3c10ev07t-m3.pdf Description: DIODE SIL CARB 650V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
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KBU6K-M3/A KBU6K-M3/A Vishay General Semiconductor - Diodes Division kbu6.pdf Description: BRIDGE RECT 1PHASE 800V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 0.98 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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S5BG-E3/I S5BG-E3/I Vishay General Semiconductor - Diodes Division doc?98677 Description: RECTIFIER, STANDARD RECOVERY, 5A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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S5BG-E3/I S5BG-E3/I Vishay General Semiconductor - Diodes Division doc?98677 Description: RECTIFIER, STANDARD RECOVERY, 5A
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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S3BG-E3/I S3BG-E3/I Vishay General Semiconductor - Diodes Division doc?98676 Description: RECTIFIER, STANDARD RECOVERY, 3A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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S3BG-E3/I S3BG-E3/I Vishay General Semiconductor - Diodes Division doc?98676 Description: RECTIFIER, STANDARD RECOVERY, 3A
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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TZM5241C-GS08 TZM5241C-GS08 Vishay General Semiconductor - Diodes Division tzq5221b.pdf Description: DIODE ZENER 11V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Produkt ist nicht verfügbar
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TZM5241C-GS18 TZM5241C-GS18 Vishay General Semiconductor - Diodes Division tzq5221b.pdf Description: DIODE ZENER 11V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Produkt ist nicht verfügbar
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ZMM5241B-13 Vishay General Semiconductor - Diodes Division ZMM5221B%20thru%20ZMM5267B.pdf Description: DIODE ZENER 11V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Produkt ist nicht verfügbar
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ZMM5241B-7 Vishay General Semiconductor - Diodes Division ZMM5221B%20thru%20ZMM5267B.pdf Description: DIODE ZENER 11V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Produkt ist nicht verfügbar
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BZX384C9V1-HE3_A18 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 9.1V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
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BZX384C9V1-HE3_A08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 9.1V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384C3V9-HE3_A08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 3.9V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
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BZX384C3V9-HG3_A08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 3.9V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
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BZX384C3V9-HE3_A18 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 3.9V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
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BZG03B15-HM3-08 BZG03B15-HM3-08 Vishay General Semiconductor - Diodes Division bzg03b-m-series.pdf Description: DIODE ZENER 15V 1.25W DO214AC
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
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BZG03B15-HM3-08 BZG03B15-HM3-08 Vishay General Semiconductor - Diodes Division bzg03b-m-series.pdf Description: DIODE ZENER 15V 1.25W DO214AC
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
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TPSMC11AHE3_B/H TPSMC11AHE3_B/H Vishay General Semiconductor - Diodes Division tpsmc.pdf Description: TVS DIODE 9.4VWM 15.6V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 96.2A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TPSMC11AHE3_B/H TPSMC11AHE3_B/H Vishay General Semiconductor - Diodes Division tpsmc.pdf Description: TVS DIODE 9.4VWM 15.6V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 96.2A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VS-16TTS08STRL-M3 VS-16TTS08STRL-M3 Vishay General Semiconductor - Diodes Division vs-16tts08s-m3.pdf Description: SCR 800V 16A TO-263AB (D2PAK)
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 16 A
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.4 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 10 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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VS-16TTS08STRL-M3 VS-16TTS08STRL-M3 Vishay General Semiconductor - Diodes Division vs-16tts08s-m3.pdf Description: SCR 800V 16A TO-263AB (D2PAK)
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 16 A
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 10 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Voltage - On State (Vtm) (Max): 1.4 V
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MB20H90CTHE3_A/P MB20H90CTHE3_A/P Vishay General Semiconductor - Diodes Division mb20hxxct.pdf Description: DIODE ARR SCHOTT 90V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 90 V
Qualification: AEC-Q101
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MB20H90CTHE3_A/I MB20H90CTHE3_A/I Vishay General Semiconductor - Diodes Division mb20hxxct.pdf Description: DIODE ARR SCHOTT 90V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 90 V
Qualification: AEC-Q101
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BZX384B9V1-HE3_A08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 9.1V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384B9V1-HE3_A18 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 9.1V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S1AFJ-M3/6A S1AFJ-M3/6A Vishay General Semiconductor - Diodes Division s1afg.pdf Description: DIODE STANDARD 600V 1A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.47 µs
Technology: Standard
Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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S1AFJ-M3/6A S1AFJ-M3/6A Vishay General Semiconductor - Diodes Division s1afg.pdf Description: DIODE STANDARD 600V 1A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.47 µs
Technology: Standard
Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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DF15005S-E3/45 DF15005S-E3/45 Vishay General Semiconductor - Diodes Division df15005s.pdf Description: BRIDGE RECT 1PHASE 50V 1.5A DFS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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5KP14AHE3/51 5KP14AHE3/51 Vishay General Semiconductor - Diodes Division Description: TVS DIODE 14VWM 23.2VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 216A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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30CPQ150 30CPQ150 Vishay General Semiconductor - Diodes Division 30CPQ150.pdf description Description: DIODE ARR SCHOT 150V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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SM6S10AHM3/I SM6S10AHM3/I Vishay General Semiconductor - Diodes Division sm6s.pdf Description: TVS DIODE 10VWM 17VC DO218AC
Packaging: Tape & Reel (TR)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 271A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 4600W (4.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM5S10AHM3/I SM5S10AHM3/I Vishay General Semiconductor - Diodes Division sm5s.pdf Description: TVS DIODE 10VWM 17VC DO218AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 3600W (3.6kW)
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Unidirectional Channels: 1
Supplier Device Package: DO-218AC
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 212A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AC
Packaging: Tape & Reel (TR)
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V20WL45-M3/I V20WL45-M3/I Vishay General Semiconductor - Diodes Division V20WL45-M3.pdf Description: DIODE SCHOTTKY 45V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 4 mA @ 45 V
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BAT42WS-HE3_A-08 Vishay General Semiconductor - Diodes Division bat42ws-g_bat43ws-g.pdf Description: DIODE SCHOTTKY 30V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT42WS-HE3_A-18 Vishay General Semiconductor - Diodes Division bat42ws-g_bat43ws-g.pdf Description: DIODE SCHOTTKY 30V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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20TQ045 20TQ045 Vishay General Semiconductor - Diodes Division 20TQ035%2C40%2C45.pdf description Description: DIODE SCHOTTKY 45V 20A TO220AC
Current - Reverse Leakage @ Vr: 2.7 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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20TQ045S 20TQ045S Vishay General Semiconductor - Diodes Division 20TQ.pdf Description: DIODE SCHOTTKY 45V 20A TO263AB
Current - Reverse Leakage @ Vr: 2.7 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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1N4148WS-HE3_A-08 Vishay General Semiconductor - Diodes Division 1n4148ws.pdf Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4148WS-HG3_A-08 Vishay General Semiconductor - Diodes Division 1n4148ws-g.pdf Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4148WS-HG3_A-18 Vishay General Semiconductor - Diodes Division 1n4148ws-g.pdf Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N6273AHE3/51 1.5KE6.8A%20_-_1.5KE540A%2C1N6267A-1N6303A_Rev10-11-16.pdf
1N6273AHE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 16.7VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-16CTQ060STRL-M3 vs-16ctqs-m3series.pdf
VS-16CTQ060STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 60V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 60 V
Qualification: AEC-Q101
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VS-16CTQ060STRL-M3 vs-16ctqs-m3series.pdf
VS-16CTQ060STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 60V 8A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 60 V
Qualification: AEC-Q101
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30CTQ060-1 30CTQyyy%20Series.pdf
30CTQ060-1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 15A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Produkt ist nicht verfügbar
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30CTQ060S description 30CTQyyy%20Series.pdf
30CTQ060S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Produkt ist nicht verfügbar
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BZX384C20-HE3-08
BZX384C20-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Qualification: AEC-Q101
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3000+0.079 EUR
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BZX384C20-HE3-08
BZX384C20-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Qualification: AEC-Q101
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BZX384C20-G3-08 PdfFile_246575.pdf
BZX384C20-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
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3000+0.087 EUR
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BZX384C20-G3-08 PdfFile_246575.pdf
BZX384C20-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
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48+0.44 EUR
65+0.32 EUR
100+0.21 EUR
500+0.13 EUR
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VS-MBRD650CTTRL-M3 vs-mbrd650c.pdf
VS-MBRD650CTTRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 50V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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VS-MBRD650CTTRL-M3 vs-mbrd650c.pdf
VS-MBRD650CTTRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 50V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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SA6.0CA-E3/54 sa5a.pdf
SA6.0CA-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6VWM 10.3VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48.5A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 500W
Power Line Protection: No
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4000+0.45 EUR
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SM5S36AHM3/I sm5s.pdf
SM5S36AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO218AC
Packaging: Tape & Reel (TR)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM5S36AHM3/I sm5s.pdf
SM5S36AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO218AC
Packaging: Cut Tape (CT)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1N4733A-T 1n4728a.pdf
1N4733A-T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 1.3W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 550 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-3C04EV07T-M3/I vs-3c04ev07t-m3.pdf
VS-3C04EV07T-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 650V 4A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Produkt ist nicht verfügbar
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VS-3C04EV07T-M3/I vs-3c04ev07t-m3.pdf
VS-3C04EV07T-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 650V 4A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
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VS-3C06EV07T-M3/I vs-3c06ev07t-m3.pdf
VS-3C06EV07T-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 650V 6A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 47 µA @ 650 V
Produkt ist nicht verfügbar
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VS-3C06EV07T-M3/I vs-3c06ev07t-m3.pdf
VS-3C06EV07T-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 650V 6A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 47 µA @ 650 V
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10+3.93 EUR
100+2.9 EUR
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VS-3C10EV07T-M3/I vs-3c10ev07t-m3.pdf
VS-3C10EV07T-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 650V 10A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
Produkt ist nicht verfügbar
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VS-3C10EV07T-M3/I vs-3c10ev07t-m3.pdf
VS-3C10EV07T-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 650V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
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3+7.19 EUR
10+5.49 EUR
100+4.16 EUR
500+3.76 EUR
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KBU6K-M3/A kbu6.pdf
KBU6K-M3/A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 0.98 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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S5BG-E3/I doc?98677
S5BG-E3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, STANDARD RECOVERY, 5A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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S5BG-E3/I doc?98677
S5BG-E3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, STANDARD RECOVERY, 5A
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 3200 Stücke:
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25+0.83 EUR
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S3BG-E3/I doc?98676
S3BG-E3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, STANDARD RECOVERY, 3A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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S3BG-E3/I doc?98676
S3BG-E3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, STANDARD RECOVERY, 3A
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 3200 Stücke:
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AnzahlPrivatkunde
25+0.83 EUR
41+0.51 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
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TZM5241C-GS08 tzq5221b.pdf
TZM5241C-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Produkt ist nicht verfügbar
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TZM5241C-GS18 tzq5221b.pdf
TZM5241C-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Produkt ist nicht verfügbar
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ZMM5241B-13 ZMM5221B%20thru%20ZMM5267B.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Produkt ist nicht verfügbar
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ZMM5241B-7 ZMM5221B%20thru%20ZMM5267B.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Produkt ist nicht verfügbar
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BZX384C9V1-HE3_A18 bzx384.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384C9V1-HE3_A08 bzx384.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384C3V9-HE3_A08 bzx384.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384C3V9-HG3_A08 bzx384.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384C3V9-HE3_A18 bzx384.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZG03B15-HM3-08 bzg03b-m-series.pdf
BZG03B15-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1.25W DO214AC
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.44 EUR
3000+0.4 EUR
4500+0.38 EUR
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BZG03B15-HM3-08 bzg03b-m-series.pdf
BZG03B15-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1.25W DO214AC
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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17+1.26 EUR
22+0.98 EUR
100+0.71 EUR
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TPSMC11AHE3_B/H tpsmc.pdf
TPSMC11AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9.4VWM 15.6V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 96.2A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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850+0.71 EUR
1700+0.65 EUR
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TPSMC11AHE3_B/H tpsmc.pdf
TPSMC11AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9.4VWM 15.6V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 96.2A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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9+2.37 EUR
15+1.49 EUR
100+0.99 EUR
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VS-16TTS08STRL-M3 vs-16tts08s-m3.pdf
VS-16TTS08STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 16A TO-263AB (D2PAK)
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 16 A
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.4 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 10 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 7200 Stücke:
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800+1.82 EUR
1600+1.69 EUR
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VS-16TTS08STRL-M3 vs-16tts08s-m3.pdf
VS-16TTS08STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 16A TO-263AB (D2PAK)
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 16 A
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 10 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Voltage - On State (Vtm) (Max): 1.4 V
auf Bestellung 7200 Stücke:
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MB20H90CTHE3_A/P mb20hxxct.pdf
MB20H90CTHE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 90V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 90 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MB20H90CTHE3_A/I mb20hxxct.pdf
MB20H90CTHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 90V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 90 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384B9V1-HE3_A08 bzx384.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384B9V1-HE3_A18 bzx384.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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S1AFJ-M3/6A s1afg.pdf
S1AFJ-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.47 µs
Technology: Standard
Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3500+0.17 EUR
7000+0.13 EUR
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S1AFJ-M3/6A s1afg.pdf
S1AFJ-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.47 µs
Technology: Standard
Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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AnzahlPrivatkunde
35+0.61 EUR
54+0.39 EUR
100+0.27 EUR
500+0.23 EUR
1000+0.2 EUR
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DF15005S-E3/45 df15005s.pdf
DF15005S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 1.5A DFS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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5KP14AHE3/51
5KP14AHE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 216A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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30CPQ150 description 30CPQ150.pdf
30CPQ150
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 150V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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SM6S10AHM3/I sm6s.pdf
SM6S10AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC DO218AC
Packaging: Tape & Reel (TR)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 271A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 4600W (4.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM5S10AHM3/I sm5s.pdf
SM5S10AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC DO218AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 3600W (3.6kW)
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Unidirectional Channels: 1
Supplier Device Package: DO-218AC
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 212A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V20WL45-M3/I V20WL45-M3.pdf
V20WL45-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 4 mA @ 45 V
Produkt ist nicht verfügbar
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BAT42WS-HE3_A-08 bat42ws-g_bat43ws-g.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT42WS-HE3_A-18 bat42ws-g_bat43ws-g.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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20TQ045 description 20TQ035%2C40%2C45.pdf
20TQ045
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A TO220AC
Current - Reverse Leakage @ Vr: 2.7 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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20TQ045S 20TQ.pdf
20TQ045S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A TO263AB
Current - Reverse Leakage @ Vr: 2.7 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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1N4148WS-HE3_A-08 1n4148ws.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4148WS-HG3_A-08 1n4148ws-g.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4148WS-HG3_A-18 1n4148ws-g.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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