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BZT55C24-GS08 BZT55C24-GS08 VISHAY bzt55.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
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BZT55C24-GS18 BZT55C24-GS18 VISHAY bzt55-se.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
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TLZ24D-GS08 TLZ24D-GS08 VISHAY tlz.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Case: MiniMELF; SOD80
Semiconductor structure: single diode
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TZM5252B-GS08 TZM5252B-GS08 VISHAY tzm5221.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
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TZM5252B-GS18 TZM5252B-GS18 VISHAY tzm5221.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
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TZMB24-GS18 TZMB24-GS18 VISHAY tzm.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
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TZMC24-GS18 TZMC24-GS18 VISHAY tzm.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Kind of package: 13 inch reel
Manufacturer standard package: 10000pcs.
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TZMC24-M-08 TZMC24-M-08 VISHAY TZM-M.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
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TZMC24-M-18 TZMC24-M-18 VISHAY TZM-M.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
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TZQ5252B-GS08 TZQ5252B-GS08 VISHAY tzq5221b.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
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TZQ5252B-GS18 TZQ5252B-GS18 VISHAY tzq5221b.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
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TZS4709-GS08 TZS4709-GS08 VISHAY tzs4678.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
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VS-3C16ET07T-M3 VS-3C16ET07T-M3 VISHAY vs-3c16et07t-m3.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 104A
Kind of package: tube
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12+7.37 EUR
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VS-3C12ET07T-M3 VS-3C12ET07T-M3 VISHAY vs-3c12et07t-m3.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 83A
Kind of package: tube
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14+6.16 EUR
16+5.33 EUR
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VS-3C20CP07L-M3 VS-3C20CP07L-M3 VISHAY vs-3c20cp07l-m3.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.46V
Max. forward impulse current: 60A
Kind of package: tube
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10+8.68 EUR
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VS-3C06ET07T-M3 VS-3C06ET07T-M3 VISHAY vs-3c06et07t-m3.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.5V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 42A
Kind of package: tube
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22+3.92 EUR
31+2.77 EUR
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VS-3C08ET07T-M3 VS-3C08ET07T-M3 VISHAY vs-3c08et07t-m3.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.5V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 54A
Kind of package: tube
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20+4.28 EUR
24+3.69 EUR
25+3.64 EUR
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VS-3C10ET07T-M3 VS-3C10ET07T-M3 VISHAY vs-3c10et07t-m3.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.46V
Max. forward impulse current: 60A
Kind of package: tube
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17+5.11 EUR
19+4.51 EUR
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VS-3C16CP07L-M3 VS-3C16CP07L-M3 VISHAY vs-3c16cp07l-m3.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.5V
Max. forward impulse current: 54A
Kind of package: tube
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11+7.81 EUR
12+7.12 EUR
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VS-3C40CP07L-M3 VS-3C40CP07L-M3 VISHAY vs-3c40cp07l-m3.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.5V
Max. forward impulse current: 110A
Kind of package: tube
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5+18.65 EUR
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VS-3C12ET07S2L-M3 VS-3C12ET07S2L-M3 VISHAY vs-3c12et07s2l-m.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 83A
Kind of package: reel; tape
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.81 EUR
13+6.57 EUR
15+5.83 EUR
25+5.3 EUR
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VS-C06ET07T-M3 VS-C06ET07T-M3 VISHAY vs-c06et07t-m3.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 39A
Kind of package: tube
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MXP120A250FL-GE3 VISHAY mxp120a250fl.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.5Ω
Pulsed drain current: 21A
Power dissipation: 22W
Gate charge: 20.3nC
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MXP120A045FE-T1GE3 VISHAY mxp120a045fe.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 85W
Technology: MaxSiC™; SiC
Mounting: SMD
Case: TO263-7
Kind of package: reel; tape
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 85W
Gate charge: 75.6nC
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MXP120A045FL-GE3 VISHAY mxp120a045fl.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 91W
Gate charge: 75.6nC
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MXP120A045FW-GE3 VISHAY mxp120a045fw.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 91W
Gate charge: 75.6nC
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MXP120A080FE-T1GE3 VISHAY mxp120a080fe.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19A; Idm: 60A; 56W
Technology: MaxSiC™; SiC
Mounting: SMD
Case: TO263-7
Kind of package: reel; tape
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 19A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 60A
Power dissipation: 56W
Gate charge: 47.3nC
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MXP120A080FL-GE3 VISHAY mxp120a080fl.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 58A
Power dissipation: 56W
Gate charge: 47.3nC
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MXP120A080FW-GE3 VISHAY mxp120a080fw.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 58A
Power dissipation: 56W
Gate charge: 47.3nC
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MXP120A250FW-GE3 VISHAY mxp120a250fw.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.5Ω
Pulsed drain current: 21A
Power dissipation: 22W
Gate charge: 20.3nC
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VS-3C10CP12L-M3 VISHAY Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 30µA
Power dissipation: 83W
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VS-3C10EP12L-M3 VISHAY Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 60µA
Power dissipation: 115W
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VS-3C10ET12T-M3 VISHAY Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 60µA
Power dissipation: 94W
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VS-3C15EP12L-M3 VISHAY Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; Ir: 75uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 75µA
Power dissipation: 150W
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VS-3C20EP12L-M3 VISHAY Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 110uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 110µA
Power dissipation: 188W
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VS-3C20ET07T-M3 VISHAY vs-3c20et07t-m3.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 110A
Kind of package: tube
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VS-3C40CP12L-M3 VISHAY Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.35V
Max. forward impulse current: 148A
Kind of package: tube
Leakage current: 12µA
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VS-C08ET07T-M3 VS-C08ET07T-M3 VISHAY vs-c08et07t-m3.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 57A
Kind of package: tube
Produkt ist nicht verfügbar
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VS-C10ET07T-M3 VS-C10ET07T-M3 VISHAY vs-c10et07t-m3.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 68A
Kind of package: tube
Produkt ist nicht verfügbar
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VS-C12ET07T-M3 VS-C12ET07T-M3 VISHAY vs-c12et07t-m3.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.65V
Max. forward impulse current: 80A
Kind of package: tube
Produkt ist nicht verfügbar
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VS-C16CP07L-M3 VISHAY vs-c16cp07l-m3.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 53A
Kind of package: tube
Produkt ist nicht verfügbar
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VS-C16ET07T-M3 VS-C16ET07T-M3 VISHAY vs-c16et07t-m3.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.65V
Max. forward impulse current: 120A
Kind of package: tube
Produkt ist nicht verfügbar
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VS-C20CP07L-M3 VISHAY vs-c20cp07l-m3.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. forward impulse current: 64A
Kind of package: tube
Produkt ist nicht verfügbar
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VS-3C04ET07S2L-M3 VS-3C04ET07S2L-M3 VISHAY vs-3c04et07s2l-m3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 29A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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VS-3C05ET12S2L-M3 VS-3C05ET12S2L-M3 VISHAY vs-3c05et12s2l-m3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 42A
Kind of package: reel; tape
Leakage current: 30µA
Power dissipation: 60W
Produkt ist nicht verfügbar
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VS-3C06ET07S2L-M3 VS-3C06ET07S2L-M3 VISHAY vs-3c06et07s2l-m3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 42A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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VS-3C08ET07S2L-M3 VS-3C08ET07S2L-M3 VISHAY vs-3c08et07s2l-m3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 54A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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VS-3C10ET07S2L-M3 VS-3C10ET07S2L-M3 VISHAY vs-3c10et07s2l-m.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.46V
Max. forward impulse current: 60A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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VS-3C10ET12S2L-M3 VS-3C10ET12S2L-M3 VISHAY Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 84A
Kind of package: reel; tape
Power dissipation: 94W
Produkt ist nicht verfügbar
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VS-3C15ET12S2L-M3 VS-3C15ET12S2L-M3 VISHAY vs-3c15et12s2l-m3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 15A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 110A
Kind of package: reel; tape
Power dissipation: 111W
Produkt ist nicht verfügbar
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CRCW0805127KFKTABC CRCW0805127KFKTABC VISHAY Data Sheet CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; 127kΩ; SMD; 0805; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 127kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 4900 Stücke:
Lieferzeit 14-21 Tag (e)
1800+0.048 EUR
3300+0.026 EUR
4900+0.017 EUR
Mindestbestellmenge: 1800 Stücke
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SIHA6N65E-GE3 SIHA6N65E-GE3 VISHAY siha6n65e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IL213AT IL213AT VISHAY il211at.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; Uce: 30V; SOIC8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4kV
CTR@If: 100-130%@10mA
Collector-emitter voltage: 30V
Case: SOIC8
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: IL21XAT
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.24 EUR
98+0.87 EUR
109+0.79 EUR
118+0.73 EUR
129+0.67 EUR
Mindestbestellmenge: 69 Stücke
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SMCJ170CA-E3/57T VISHAY smcj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; bidirectional; DO214AB,SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
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SMCJ170CA-E3/9AT VISHAY smcj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; bidirectional; DO214AB,SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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SIHLL014TR-GE3 SIHLL014TR-GE3 VISHAY sihll014.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; Idm: 22A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Pulsed drain current: 22A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CRCW251251R0FKEG CRCW251251R0FKEG VISHAY 1.pdf Category: SMD resistors
Description: Resistor: thick film; 51Ω; SMD; 2512; 1W; ±1%; 500V; 6.3x3.15x0.6mm
Type of resistor: thick film
Resistance: 51Ω
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Body dimensions: 6.3x3.15x0.6mm
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 4000pcs.
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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WSLF25122L000FEA WSLF25122L000FEA VISHAY wslf.pdf Category: SMD resistors
Description: Resistor: metal strip; 2mΩ; current shunt,sensing; SMD; 2512; 6W
Type of resistor: metal strip
Resistance: 2mΩ
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Power: 6W
Tolerance: ±1%
Operating temperature: -65...170°C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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SFH617A-2 SFH617A-2 VISHAY sfh617a.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4.2µs
Turn-off time: 1.8µs
auf Bestellung 1776 Stücke:
Lieferzeit 14-21 Tag (e)
74+1.15 EUR
107+0.8 EUR
119+0.71 EUR
144+0.6 EUR
300+0.5 EUR
500+0.45 EUR
1000+0.39 EUR
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SFH617A-3X007T SFH617A-3X007T VISHAY sfh617a.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@60mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
auf Bestellung 7635 Stücke:
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65+1.31 EUR
97+0.88 EUR
125+0.68 EUR
139+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
2000+0.39 EUR
3000+0.37 EUR
4000+0.36 EUR
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BZT55C24-GS08 bzt55.pdf
BZT55C24-GS08
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZT55C24-GS18 bzt55-se.pdf
BZT55C24-GS18
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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TLZ24D-GS08 tlz.pdf
TLZ24D-GS08
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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TZM5252B-GS08 tzm5221.pdf
TZM5252B-GS08
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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TZM5252B-GS18 tzm5221.pdf
TZM5252B-GS18
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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TZMB24-GS18 tzm.pdf
TZMB24-GS18
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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TZMC24-GS18 tzm.pdf
TZMC24-GS18
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Kind of package: 13 inch reel
Manufacturer standard package: 10000pcs.
Produkt ist nicht verfügbar
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TZMC24-M-08 TZM-M.pdf
TZMC24-M-08
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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TZMC24-M-18 TZM-M.pdf
TZMC24-M-18
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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TZQ5252B-GS08 tzq5221b.pdf
TZQ5252B-GS08
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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TZQ5252B-GS18 tzq5221b.pdf
TZQ5252B-GS18
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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TZS4709-GS08 tzs4678.pdf
TZS4709-GS08
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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VS-3C16ET07T-M3 vs-3c16et07t-m3.pdf
VS-3C16ET07T-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 104A
Kind of package: tube
auf Bestellung 47 Stücke:
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AnzahlPrivatkunde
12+7.37 EUR
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VS-3C12ET07T-M3 vs-3c12et07t-m3.pdf
VS-3C12ET07T-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 83A
Kind of package: tube
auf Bestellung 48 Stücke:
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AnzahlPrivatkunde
14+6.16 EUR
16+5.33 EUR
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VS-3C20CP07L-M3 vs-3c20cp07l-m3.pdf
VS-3C20CP07L-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.46V
Max. forward impulse current: 60A
Kind of package: tube
auf Bestellung 25 Stücke:
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AnzahlPrivatkunde
10+8.68 EUR
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VS-3C06ET07T-M3 vs-3c06et07t-m3.pdf
VS-3C06ET07T-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.5V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 42A
Kind of package: tube
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
22+3.92 EUR
31+2.77 EUR
Mindestbestellmenge: 22 Stücke
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VS-3C08ET07T-M3 vs-3c08et07t-m3.pdf
VS-3C08ET07T-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.5V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 54A
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.28 EUR
24+3.69 EUR
25+3.64 EUR
Mindestbestellmenge: 20 Stücke
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VS-3C10ET07T-M3 vs-3c10et07t-m3.pdf
VS-3C10ET07T-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.46V
Max. forward impulse current: 60A
Kind of package: tube
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
17+5.11 EUR
19+4.51 EUR
Mindestbestellmenge: 17 Stücke
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VS-3C16CP07L-M3 vs-3c16cp07l-m3.pdf
VS-3C16CP07L-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.5V
Max. forward impulse current: 54A
Kind of package: tube
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+7.81 EUR
12+7.12 EUR
Mindestbestellmenge: 11 Stücke
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VS-3C40CP07L-M3 vs-3c40cp07l-m3.pdf
VS-3C40CP07L-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.5V
Max. forward impulse current: 110A
Kind of package: tube
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+18.65 EUR
Mindestbestellmenge: 5 Stücke
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VS-3C12ET07S2L-M3 vs-3c12et07s2l-m.pdf
VS-3C12ET07S2L-M3
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 83A
Kind of package: reel; tape
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+7.81 EUR
13+6.57 EUR
15+5.83 EUR
25+5.3 EUR
Mindestbestellmenge: 11 Stücke
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VS-C06ET07T-M3 vs-c06et07t-m3.pdf
VS-C06ET07T-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 39A
Kind of package: tube
Produkt ist nicht verfügbar
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MXP120A250FL-GE3 mxp120a250fl.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.5Ω
Pulsed drain current: 21A
Power dissipation: 22W
Gate charge: 20.3nC
Produkt ist nicht verfügbar
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MXP120A045FE-T1GE3 mxp120a045fe.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 85W
Technology: MaxSiC™; SiC
Mounting: SMD
Case: TO263-7
Kind of package: reel; tape
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 85W
Gate charge: 75.6nC
Produkt ist nicht verfügbar
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MXP120A045FL-GE3 mxp120a045fl.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 91W
Gate charge: 75.6nC
Produkt ist nicht verfügbar
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MXP120A045FW-GE3 mxp120a045fw.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 91W
Gate charge: 75.6nC
Produkt ist nicht verfügbar
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MXP120A080FE-T1GE3 mxp120a080fe.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19A; Idm: 60A; 56W
Technology: MaxSiC™; SiC
Mounting: SMD
Case: TO263-7
Kind of package: reel; tape
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 19A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 60A
Power dissipation: 56W
Gate charge: 47.3nC
Produkt ist nicht verfügbar
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MXP120A080FL-GE3 mxp120a080fl.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 58A
Power dissipation: 56W
Gate charge: 47.3nC
Produkt ist nicht verfügbar
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MXP120A080FW-GE3 mxp120a080fw.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 58A
Power dissipation: 56W
Gate charge: 47.3nC
Produkt ist nicht verfügbar
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MXP120A250FW-GE3 mxp120a250fw.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.5Ω
Pulsed drain current: 21A
Power dissipation: 22W
Gate charge: 20.3nC
Produkt ist nicht verfügbar
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VS-3C10CP12L-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 30µA
Power dissipation: 83W
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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VS-3C10EP12L-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 60µA
Power dissipation: 115W
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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VS-3C10ET12T-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 60µA
Power dissipation: 94W
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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VS-3C15EP12L-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; Ir: 75uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 75µA
Power dissipation: 150W
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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VS-3C20EP12L-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 110uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 110µA
Power dissipation: 188W
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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VS-3C20ET07T-M3 vs-3c20et07t-m3.pdf
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 110A
Kind of package: tube
Produkt ist nicht verfügbar
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VS-3C40CP12L-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.35V
Max. forward impulse current: 148A
Kind of package: tube
Leakage current: 12µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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VS-C08ET07T-M3 vs-c08et07t-m3.pdf
VS-C08ET07T-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 57A
Kind of package: tube
Produkt ist nicht verfügbar
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VS-C10ET07T-M3 vs-c10et07t-m3.pdf
VS-C10ET07T-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 68A
Kind of package: tube
Produkt ist nicht verfügbar
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VS-C12ET07T-M3 vs-c12et07t-m3.pdf
VS-C12ET07T-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.65V
Max. forward impulse current: 80A
Kind of package: tube
Produkt ist nicht verfügbar
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VS-C16CP07L-M3 vs-c16cp07l-m3.pdf
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 53A
Kind of package: tube
Produkt ist nicht verfügbar
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VS-C16ET07T-M3 vs-c16et07t-m3.pdf
VS-C16ET07T-M3
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.65V
Max. forward impulse current: 120A
Kind of package: tube
Produkt ist nicht verfügbar
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VS-C20CP07L-M3 vs-c20cp07l-m3.pdf
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. forward impulse current: 64A
Kind of package: tube
Produkt ist nicht verfügbar
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VS-3C04ET07S2L-M3 vs-3c04et07s2l-m3.pdf
VS-3C04ET07S2L-M3
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 29A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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VS-3C05ET12S2L-M3 vs-3c05et12s2l-m3.pdf
VS-3C05ET12S2L-M3
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 42A
Kind of package: reel; tape
Leakage current: 30µA
Power dissipation: 60W
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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VS-3C06ET07S2L-M3 vs-3c06et07s2l-m3.pdf
VS-3C06ET07S2L-M3
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 42A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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VS-3C08ET07S2L-M3 vs-3c08et07s2l-m3.pdf
VS-3C08ET07S2L-M3
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 54A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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VS-3C10ET07S2L-M3 vs-3c10et07s2l-m.pdf
VS-3C10ET07S2L-M3
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.46V
Max. forward impulse current: 60A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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VS-3C10ET12S2L-M3
VS-3C10ET12S2L-M3
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 84A
Kind of package: reel; tape
Power dissipation: 94W
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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VS-3C15ET12S2L-M3 vs-3c15et12s2l-m3.pdf
VS-3C15ET12S2L-M3
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 15A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 110A
Kind of package: reel; tape
Power dissipation: 111W
Produkt ist nicht verfügbar
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CRCW0805127KFKTABC Data Sheet CRCW_BCe3.pdf
CRCW0805127KFKTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 127kΩ; SMD; 0805; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 127kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 4900 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1800+0.048 EUR
3300+0.026 EUR
4900+0.017 EUR
Mindestbestellmenge: 1800 Stücke
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SIHA6N65E-GE3 siha6n65e.pdf
SIHA6N65E-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IL213AT il211at.pdf
IL213AT
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; Uce: 30V; SOIC8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4kV
CTR@If: 100-130%@10mA
Collector-emitter voltage: 30V
Case: SOIC8
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: IL21XAT
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
69+1.24 EUR
98+0.87 EUR
109+0.79 EUR
118+0.73 EUR
129+0.67 EUR
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SMCJ170CA-E3/57T smcj.pdf
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; bidirectional; DO214AB,SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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SMCJ170CA-E3/9AT smcj.pdf
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; bidirectional; DO214AB,SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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SIHLL014TR-GE3 sihll014.pdf
SIHLL014TR-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; Idm: 22A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Pulsed drain current: 22A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CRCW251251R0FKEG 1.pdf
CRCW251251R0FKEG
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 51Ω; SMD; 2512; 1W; ±1%; 500V; 6.3x3.15x0.6mm
Type of resistor: thick film
Resistance: 51Ω
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Body dimensions: 6.3x3.15x0.6mm
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 4000pcs.
Produkt ist nicht verfügbar
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WSLF25122L000FEA wslf.pdf
WSLF25122L000FEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; 2mΩ; current shunt,sensing; SMD; 2512; 6W
Type of resistor: metal strip
Resistance: 2mΩ
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Power: 6W
Tolerance: ±1%
Operating temperature: -65...170°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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SFH617A-2 sfh617a.pdf
SFH617A-2
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4.2µs
Turn-off time: 1.8µs
auf Bestellung 1776 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
74+1.15 EUR
107+0.8 EUR
119+0.71 EUR
144+0.6 EUR
300+0.5 EUR
500+0.45 EUR
1000+0.39 EUR
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SFH617A-3X007T sfh617a.pdf
SFH617A-3X007T
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@60mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
auf Bestellung 7635 Stücke:
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AnzahlPrivatkunde
65+1.31 EUR
97+0.88 EUR
125+0.68 EUR
139+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
2000+0.39 EUR
3000+0.37 EUR
4000+0.36 EUR
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