| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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VS-16CTQ080SHM3 | VISHAY |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: tube Manufacturer standard package: 50pcs. Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VS-16CTQ080STRL-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: 13 inch reel Manufacturer standard package: 800pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VS-16CTQ080STRLHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: 13 inch reel Manufacturer standard package: 800pcs. Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VS-16CTQ080STRR-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: 13 inch reel Manufacturer standard package: 800pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VS-16CTQ080STRRHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: 13 inch reel Manufacturer standard package: 800pcs. Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSE1PD-M3/89A | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 780ns; DO219AD,microSMP; Ifsm: 20A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 780ns Semiconductor structure: single diode Capacitance: 5pF Case: DO219AD; microSMP Max. forward voltage: 0.98V Max. forward impulse current: 20A Leakage current: 50µA Kind of package: 7 inch reel Manufacturer standard package: 4500pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MSE1PDHM3/89A | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; DO219AD,microSMP; Ufmax: 1.2V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Case: DO219AD; microSMP Max. forward voltage: 1.2V Max. forward impulse current: 15A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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RCA08051R00JNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1Ω; 0805; 125mW; ±5%; 150V; -55÷155°C Type of resistor: thick film Resistance: 1Ω Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±5% Operating voltage: 150V Temperature coefficient: 100ppm/°C Operating temperature: -55...155°C Conform to the norm: AEC-Q200 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CRCW08051R20FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 125mW,250mW; ±1%; 2x1.25x0.45mm Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W; 0.25W Tolerance: ±1% Operating temperature: -55...155°C Conform to the norm: AEC-Q200 Body dimensions: 2x1.25x0.45mm Temperature coefficient: 100ppm/°C |
auf Bestellung 100000 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW080551R1FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 51.1Ω; SMD; 0805; 125mW,250mW; ±1%; -55÷155°C Type of resistor: thick film Resistance: 51.1Ω Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W; 0.25W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C Conform to the norm: AEC-Q200 Body dimensions: 2x1.25x0.45mm Temperature coefficient: 100ppm/°C |
auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0805121RFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 121Ω; SMD; 0805; 125mW,250mW; ±1%; -55÷155°C Type of resistor: thick film Resistance: 121Ω Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W; 0.25W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C Conform to the norm: AEC-Q200 Body dimensions: 2x1.25x0.45mm Temperature coefficient: 100ppm/°C |
auf Bestellung 100000 Stücke: Lieferzeit 14-21 Tag (e) |
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PR01000101508JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; 1.5Ω; THT; 1W; ±5%; 350V; Ø2.5x8mm; 250ppm/°C Type of resistor: power metal Resistance: 1.5Ω Mounting: THT Power: 1W Tolerance: ±5% Operating voltage: 350V Body dimensions: Ø2.5x8mm Temperature coefficient: 250ppm/°C Length: 8mm Diameter: 2.5mm Leads: axial Resistor features: high power and small dimension |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMM02070C1508FBP00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 1.5Ω; SMD; MELF; 0207; 1W; ±1%; 350V; Ø2.2x5.8mm Type of resistor: thin film Resistance: 1.5Ω Mounting: SMD Case: MELF Case - inch: 0207 Case - mm: 6123 Power: 1W Tolerance: ±1% Operating voltage: 350V Body dimensions: Ø2.2x5.8mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC-Q200 Length: 5.8mm Diameter: 2.2mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SIDR870ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 300A Power dissipation: 125W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SIDR5102EP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 126A Pulsed drain current: 300A Power dissipation: 150W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SIDR510EP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 148A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 148A Pulsed drain current: 300A Power dissipation: 150W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SIDR870ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 300A Power dissipation: 125W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SIJH112E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 225A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 225A Pulsed drain current: 300A Power dissipation: 333W Case: PowerPAK® 8x8L Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SIR870ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 300A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SIR870ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 300A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SIR512DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 80.7A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 80.7A Pulsed drain current: 300A Power dissipation: 96.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 30.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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Z4KE200A-E3/54 | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.5W; 200V; DO41; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 200V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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P4KE200A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 400W; 190V; 1.5A; unidirectional; DO41; TransZorb®; P4KE Type of diode: TVS Case: DO41 Mounting: THT Semiconductor structure: unidirectional Kind of package: 13 inch reel Leakage current: 1µA Breakdown voltage: 190V Manufacturer series: P4KE Max. forward impulse current: 1.5A Peak pulse power dissipation: 0.4kW Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 171V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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Z4KE200A-E3/73 | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.5W; 200V; DO41; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 200V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FEP16GT-E3/45 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; tube; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: glass passivated; ultrafast switching Max. forward impulse current: 125A Case: TO220AB Kind of package: tube Max. forward voltage: 1.3V Max. load current: 16A Heatsink thickness: 1.14...1.39mm Reverse recovery time: 50ns |
auf Bestellung 577 Stücke: Lieferzeit 14-21 Tag (e) |
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GBU6J-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Max. off-state voltage: 0.6kV Load current: 6A Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Case: GBU Kind of package: tube Max. forward voltage: 1V Version: flat Leads: flat pin Electrical mounting: THT Type of bridge rectifier: single-phase |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GBU6J-E3/51 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Max. off-state voltage: 0.6kV Load current: 6A Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Case: GBU Kind of package: in-tray Max. forward voltage: 1V Version: flat Leads: flat pin Electrical mounting: THT Type of bridge rectifier: single-phase |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GBU6J-M3/51 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Max. off-state voltage: 0.6kV Load current: 6A Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Case: GBU Kind of package: in-tray Max. forward voltage: 1V Version: flat Leads: flat pin Electrical mounting: THT Type of bridge rectifier: single-phase |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MMA02040C6800FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 680Ω; SMD; MiniMELF; 0204; 250mW; ±1%; 200V Type of resistor: thin film Resistance: 680Ω Case - inch: 0204 Case - mm: 0510 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Temperature coefficient: 50ppm/°C Body dimensions: Ø1.4x3.6mm Case: MiniMELF Conform to the norm: AEC-Q200 Quantity in set/package: 3000pcs. Diameter: 1.4mm Mounting: SMD Operating temperature: -55...155°C Length: 3.6mm |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ100CA-E3/5B | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 0.1kV Breakdown voltage: 111V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Technology: TransZorb® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3200 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMBJ100CA-M3/52 | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 0.1kV Breakdown voltage: 111V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Technology: TransZorb® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMBJ100CA-M3/5B | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 0.1kV Breakdown voltage: 111V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Technology: TransZorb® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMCJ100CA-E3/57T | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 0.1kV Breakdown voltage: 111...123V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape |
auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ100CA-E3/9AT | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; DO214AB,SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 0.1kV Breakdown voltage: 111...123V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ZMY62-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 62V; SMD; DO213AB,MELF glass; single diode; ZMY Type of diode: Zener Power dissipation: 1W Zener voltage: 62V Mounting: SMD Tolerance: ±5% Case: DO213AB; MELF glass Semiconductor structure: single diode Manufacturer series: ZMY |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DG412LEDY-T1-GE3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch Type of integrated circuit: analog switch Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DG412HSDY-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch Type of integrated circuit: analog switch Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DG412LEDQ-GE3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch Type of integrated circuit: analog switch Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 360 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DG412LEDY-GE3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch Type of integrated circuit: analog switch Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SMAJ40CAHE3_A/I | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; bidirectional; DO214AC,SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Case: DO214AC; SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VJ0805Y681KXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 100V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 100V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VJ0805A681FXBAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±1%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VJ0805A681GXAAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VJ0805A681GXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VJ0805A681GXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±2%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VJ0805A681JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WR404140A2202J4100 | VISHAY |
Category: THT Resistors Description: Resistor: metal oxide; 22kΩ; THT; 2W; ±5%; 500V; Ø3.9x10mm; 1000pcs. Type of resistor: metal oxide Resistance: 22kΩ Mounting: THT Power: 2W Tolerance: ±5% Operating voltage: 500V Body dimensions: Ø3.9x10mm Operating temperature: -55...200°C Temperature coefficient: 200ppm/°C Quantity in set/package: 1000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
BZT52B27-HE3_A-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 27V; SMD; SOD123; single diode; BZT52B Type of diode: Zener Power dissipation: 0.5W Zener voltage: 27V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Manufacturer series: BZT52B Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZT52B24-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: 7 inch reel Manufacturer series: BZT52B Manufacturer standard package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZT52B24-E3-18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 13 inch reel Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: 13 inch reel Manufacturer series: BZT52B Manufacturer standard package: 10000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZT52B24-G3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: 7 inch reel Manufacturer series: BZT52B Manufacturer standard package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZT52B24-G3-18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 13 inch reel Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: 13 inch reel Manufacturer series: BZT52B Manufacturer standard package: 10000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZT52B24-HE3_A-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; BZT52B Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Manufacturer series: BZT52B Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZT52B24-HE3_A-18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; BZT52B Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Manufacturer series: BZT52B Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WSLT2512R0150FEB | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; 15mΩ; current shunt,sensing; SMD; 2512; 1W Type of resistor: metal strip Resistance: 15mΩ Kind of resistor: current shunt; sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Power: 1W Tolerance: ±1% Operating temperature: -65...275°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WSL2512R0150FEA18 | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; 15mΩ; SMD; 2512; 2W; ±1%; -65÷170°C Type of resistor: metal strip Resistance: 15mΩ Mounting: SMD Case - inch: 2512 Power: 2W Tolerance: ±1% Operating temperature: -65...170°C |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIS590DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100V; PowerPAK® 1212-8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100V Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SQS965ELNW-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; PowerPAK® 1212-8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SQS940ELNW-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; PowerPAK® 1212-8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SQS966ENW-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; PowerPAK® 1212-8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 6A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| VS-16CTQ080SHM3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: tube
Manufacturer standard package: 50pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: tube
Manufacturer standard package: 50pcs.
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-16CTQ080STRL-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-16CTQ080STRLHM3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-16CTQ080STRR-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-16CTQ080STRRHM3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSE1PD-M3/89A |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 780ns; DO219AD,microSMP; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 780ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: DO219AD; microSMP
Max. forward voltage: 0.98V
Max. forward impulse current: 20A
Leakage current: 50µA
Kind of package: 7 inch reel
Manufacturer standard package: 4500pcs.
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 780ns; DO219AD,microSMP; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 780ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: DO219AD; microSMP
Max. forward voltage: 0.98V
Max. forward impulse current: 20A
Leakage current: 50µA
Kind of package: 7 inch reel
Manufacturer standard package: 4500pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 4500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MSE1PDHM3/89A |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; DO219AD,microSMP; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: DO219AD; microSMP
Max. forward voltage: 1.2V
Max. forward impulse current: 15A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; DO219AD,microSMP; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: DO219AD; microSMP
Max. forward voltage: 1.2V
Max. forward impulse current: 15A
Produkt ist nicht verfügbar
Mindestbestellmenge: 4500 Stücke
Im Einkaufswagen
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| RCA08051R00JNEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1Ω; 0805; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 1Ω
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 1Ω; 0805; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 1Ω
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Mindestbestellmenge: 20000 Stücke
Im Einkaufswagen
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| CRCW08051R20FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 125mW,250mW; ±1%; 2x1.25x0.45mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W; 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 125mW,250mW; ±1%; 2x1.25x0.45mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W; 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Temperature coefficient: 100ppm/°C
auf Bestellung 100000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.014 EUR |
| CRCW080551R1FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 51.1Ω; SMD; 0805; 125mW,250mW; ±1%; -55÷155°C
Type of resistor: thick film
Resistance: 51.1Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W; 0.25W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; 51.1Ω; SMD; 0805; 125mW,250mW; ±1%; -55÷155°C
Type of resistor: thick film
Resistance: 51.1Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W; 0.25W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Temperature coefficient: 100ppm/°C
auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30000+ | 0.0046 EUR |
| CRCW0805121RFKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 121Ω; SMD; 0805; 125mW,250mW; ±1%; -55÷155°C
Type of resistor: thick film
Resistance: 121Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W; 0.25W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; 121Ω; SMD; 0805; 125mW,250mW; ±1%; -55÷155°C
Type of resistor: thick film
Resistance: 121Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W; 0.25W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Temperature coefficient: 100ppm/°C
auf Bestellung 100000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30000+ | 0.0046 EUR |
| PR01000101508JA100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; 1.5Ω; THT; 1W; ±5%; 350V; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Resistance: 1.5Ω
Mounting: THT
Power: 1W
Tolerance: ±5%
Operating voltage: 350V
Body dimensions: Ø2.5x8mm
Temperature coefficient: 250ppm/°C
Length: 8mm
Diameter: 2.5mm
Leads: axial
Resistor features: high power and small dimension
Category: THT Resistors
Description: Resistor: power metal; 1.5Ω; THT; 1W; ±5%; 350V; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Resistance: 1.5Ω
Mounting: THT
Power: 1W
Tolerance: ±5%
Operating voltage: 350V
Body dimensions: Ø2.5x8mm
Temperature coefficient: 250ppm/°C
Length: 8mm
Diameter: 2.5mm
Leads: axial
Resistor features: high power and small dimension
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMM02070C1508FBP00 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 1.5Ω; SMD; MELF; 0207; 1W; ±1%; 350V; Ø2.2x5.8mm
Type of resistor: thin film
Resistance: 1.5Ω
Mounting: SMD
Case: MELF
Case - inch: 0207
Case - mm: 6123
Power: 1W
Tolerance: ±1%
Operating voltage: 350V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
Category: SMD resistors
Description: Resistor: thin film; 1.5Ω; SMD; MELF; 0207; 1W; ±1%; 350V; Ø2.2x5.8mm
Type of resistor: thin film
Resistance: 1.5Ω
Mounting: SMD
Case: MELF
Case - inch: 0207
Case - mm: 6123
Power: 1W
Tolerance: ±1%
Operating voltage: 350V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDR870ADP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 300A
Power dissipation: 125W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 300A
Power dissipation: 125W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIDR5102EP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 126A
Pulsed drain current: 300A
Power dissipation: 150W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 126A
Pulsed drain current: 300A
Power dissipation: 150W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SIDR510EP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 148A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 148A
Pulsed drain current: 300A
Power dissipation: 150W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 148A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 148A
Pulsed drain current: 300A
Power dissipation: 150W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| SIDR870ADP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 300A
Power dissipation: 125W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 300A
Power dissipation: 125W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| SIJH112E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 225A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 225A
Pulsed drain current: 300A
Power dissipation: 333W
Case: PowerPAK® 8x8L
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 225A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 225A
Pulsed drain current: 300A
Power dissipation: 333W
Case: PowerPAK® 8x8L
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| SIR870ADP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 300A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 300A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SIR870ADP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| SIR512DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 80.7A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80.7A
Pulsed drain current: 300A
Power dissipation: 96.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 80.7A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80.7A
Pulsed drain current: 300A
Power dissipation: 96.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| Z4KE200A-E3/54 |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.5W; 200V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 200V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.5W; 200V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 200V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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| P4KE200A-E3/54 |
|
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 400W; 190V; 1.5A; unidirectional; DO41; TransZorb®; P4KE
Type of diode: TVS
Case: DO41
Mounting: THT
Semiconductor structure: unidirectional
Kind of package: 13 inch reel
Leakage current: 1µA
Breakdown voltage: 190V
Manufacturer series: P4KE
Max. forward impulse current: 1.5A
Peak pulse power dissipation: 0.4kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 171V
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 400W; 190V; 1.5A; unidirectional; DO41; TransZorb®; P4KE
Type of diode: TVS
Case: DO41
Mounting: THT
Semiconductor structure: unidirectional
Kind of package: 13 inch reel
Leakage current: 1µA
Breakdown voltage: 190V
Manufacturer series: P4KE
Max. forward impulse current: 1.5A
Peak pulse power dissipation: 0.4kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 171V
Produkt ist nicht verfügbar
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| Z4KE200A-E3/73 |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.5W; 200V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 200V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.5W; 200V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 200V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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| FEP16GT-E3/45 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 125A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 125A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 50ns
auf Bestellung 577 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 1.45 EUR |
| 63+ | 1.36 EUR |
| 65+ | 1.31 EUR |
| 68+ | 1.26 EUR |
| 71+ | 1.21 EUR |
| 100+ | 1.18 EUR |
| 500+ | 1.11 EUR |
| GBU6J-E3/45 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: tube
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: tube
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
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Im Einkaufswagen
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| GBU6J-E3/51 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: in-tray
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: in-tray
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
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| GBU6J-M3/51 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: in-tray
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: in-tray
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
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| MMA02040C6800FB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 680Ω; SMD; MiniMELF; 0204; 250mW; ±1%; 200V
Type of resistor: thin film
Resistance: 680Ω
Case - inch: 0204
Case - mm: 0510
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 50ppm/°C
Body dimensions: Ø1.4x3.6mm
Case: MiniMELF
Conform to the norm: AEC-Q200
Quantity in set/package: 3000pcs.
Diameter: 1.4mm
Mounting: SMD
Operating temperature: -55...155°C
Length: 3.6mm
Category: SMD resistors
Description: Resistor: thin film; 680Ω; SMD; MiniMELF; 0204; 250mW; ±1%; 200V
Type of resistor: thin film
Resistance: 680Ω
Case - inch: 0204
Case - mm: 0510
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 50ppm/°C
Body dimensions: Ø1.4x3.6mm
Case: MiniMELF
Conform to the norm: AEC-Q200
Quantity in set/package: 3000pcs.
Diameter: 1.4mm
Mounting: SMD
Operating temperature: -55...155°C
Length: 3.6mm
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1563+ | 0.055 EUR |
| 1946+ | 0.044 EUR |
| 2253+ | 0.038 EUR |
| 2539+ | 0.033 EUR |
| 2718+ | 0.031 EUR |
| 3000+ | 0.029 EUR |
| SMBJ100CA-E3/5B |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Produkt ist nicht verfügbar
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| SMBJ100CA-M3/52 |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Produkt ist nicht verfügbar
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| SMBJ100CA-M3/5B |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Produkt ist nicht verfügbar
Mindestbestellmenge: 9600 Stücke
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| SMCJ100CA-E3/57T |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 79+ | 1.09 EUR |
| 154+ | 0.56 EUR |
| 221+ | 0.38 EUR |
| 250+ | 0.35 EUR |
| 500+ | 0.31 EUR |
| 850+ | 0.29 EUR |
| SMCJ100CA-E3/9AT |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; DO214AB,SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; DO214AB,SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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| ZMY62-GS08 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 62V; SMD; DO213AB,MELF glass; single diode; ZMY
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 62V
Mounting: SMD
Tolerance: ±5%
Case: DO213AB; MELF glass
Semiconductor structure: single diode
Manufacturer series: ZMY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 62V; SMD; DO213AB,MELF glass; single diode; ZMY
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 62V
Mounting: SMD
Tolerance: ±5%
Case: DO213AB; MELF glass
Semiconductor structure: single diode
Manufacturer series: ZMY
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
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| DG412LEDY-T1-GE3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| DG412HSDY-E3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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| DG412LEDQ-GE3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 360 Stücke
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| DG412LEDY-GE3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
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| SMAJ40CAHE3_A/I |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 13 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 13 inch reel; tape
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| VJ0805Y681KXBCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
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| VJ0805A681FXBAC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±1%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±1%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
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| VJ0805A681GXAAC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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| VJ0805A681GXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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| VJ0805A681GXBCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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| VJ0805A681JXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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| WR404140A2202J4100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal oxide; 22kΩ; THT; 2W; ±5%; 500V; Ø3.9x10mm; 1000pcs.
Type of resistor: metal oxide
Resistance: 22kΩ
Mounting: THT
Power: 2W
Tolerance: ±5%
Operating voltage: 500V
Body dimensions: Ø3.9x10mm
Operating temperature: -55...200°C
Temperature coefficient: 200ppm/°C
Quantity in set/package: 1000pcs.
Category: THT Resistors
Description: Resistor: metal oxide; 22kΩ; THT; 2W; ±5%; 500V; Ø3.9x10mm; 1000pcs.
Type of resistor: metal oxide
Resistance: 22kΩ
Mounting: THT
Power: 2W
Tolerance: ±5%
Operating voltage: 500V
Body dimensions: Ø3.9x10mm
Operating temperature: -55...200°C
Temperature coefficient: 200ppm/°C
Quantity in set/package: 1000pcs.
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| BZT52B27-HE3_A-08 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
Produkt ist nicht verfügbar
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| BZT52B24-E3-08 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 7 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 7 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 3000pcs.
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| BZT52B24-E3-18 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 13 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 13 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 10000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 13 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 13 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 10000pcs.
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| BZT52B24-G3-08 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 7 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 7 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 3000pcs.
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| BZT52B24-G3-18 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 13 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 13 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 10000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 13 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 13 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 10000pcs.
Produkt ist nicht verfügbar
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| BZT52B24-HE3_A-08 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
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| BZT52B24-HE3_A-18 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
Produkt ist nicht verfügbar
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| WSLT2512R0150FEB |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; 15mΩ; current shunt,sensing; SMD; 2512; 1W
Type of resistor: metal strip
Resistance: 15mΩ
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Power: 1W
Tolerance: ±1%
Operating temperature: -65...275°C
Category: SMD resistors
Description: Resistor: metal strip; 15mΩ; current shunt,sensing; SMD; 2512; 1W
Type of resistor: metal strip
Resistance: 15mΩ
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Power: 1W
Tolerance: ±1%
Operating temperature: -65...275°C
Produkt ist nicht verfügbar
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| WSL2512R0150FEA18 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; 15mΩ; SMD; 2512; 2W; ±1%; -65÷170°C
Type of resistor: metal strip
Resistance: 15mΩ
Mounting: SMD
Case - inch: 2512
Power: 2W
Tolerance: ±1%
Operating temperature: -65...170°C
Category: SMD resistors
Description: Resistor: metal strip; 15mΩ; SMD; 2512; 2W; ±1%; -65÷170°C
Type of resistor: metal strip
Resistance: 15mΩ
Mounting: SMD
Case - inch: 2512
Power: 2W
Tolerance: ±1%
Operating temperature: -65...170°C
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| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.38 EUR |
| SIS590DN-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100V; PowerPAK® 1212-8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100V; PowerPAK® 1212-8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| SQS965ELNW-T1_GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; PowerPAK® 1212-8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; PowerPAK® 1212-8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| SQS940ELNW-T1_GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; PowerPAK® 1212-8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; PowerPAK® 1212-8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| SQS966ENW-T1_GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; PowerPAK® 1212-8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; PowerPAK® 1212-8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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