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CRCW120610K0JNTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; 200V; -55÷155°C Tolerance: ±5% Resistance: 10kΩ Operating temperature: -55...155°C Power: 0.25W Mounting: SMD Operating voltage: 200V Case - inch: 1206 Case - mm: 3216 Type of resistor: thick film |
auf Bestellung 9900 Stücke: Lieferzeit 14-21 Tag (e) |
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SFH6156-2 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4.2µs Turn-off time: 23µs |
auf Bestellung 627 Stücke: Lieferzeit 14-21 Tag (e) |
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SFH6156-2T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4.2µs Turn-off time: 23µs |
auf Bestellung 3173 Stücke: Lieferzeit 14-21 Tag (e) |
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SFH6156-2X001T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4.2µs Turn-off time: 23µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N4001-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 1A; 13 inch reel; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Quantity in set/package: 5500pcs. Capacitance: 15pF |
auf Bestellung 5594 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54WS-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 7 inch reel Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: 7 inch reel Quantity in set/package: 3000pcs. Features of semiconductor devices: small signal Max. load current: 0.3A |
auf Bestellung 658 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP9140PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 143 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4004-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Quantity in set/package: 5500pcs. Capacitance: 15pF |
auf Bestellung 2332 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4004-E3/73 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; Ammo Pack; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 15pF |
auf Bestellung 25714 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4004GP-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Quantity in set/package: 5500pcs. Features of semiconductor devices: glass passivated Capacitance: 8pF Reverse recovery time: 2µs |
auf Bestellung 4047 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Gate charge: 70nC Kind of package: tube |
auf Bestellung 2048 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhancement Gate charge: 70nC Kind of package: tube |
auf Bestellung 1230 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhancement Gate charge: 70nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BAT54A-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.23W Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
auf Bestellung 1295 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54A-HE3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.23W Features of semiconductor devices: small signal Application: automotive industry Quantity in set/package: 3000pcs. |
auf Bestellung 1630 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54S-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Max. forward voltage: 0.24V Max. load current: 0.3A Kind of package: 7 inch reel Quantity in set/package: 3000pcs. Features of semiconductor devices: small signal Capacitance: 10pF Reverse recovery time: 5ns Power dissipation: 0.23W Max. forward impulse current: 0.6A |
auf Bestellung 2406 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54S-HE3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.23W Features of semiconductor devices: small signal Application: automotive industry Quantity in set/package: 3000pcs. |
auf Bestellung 3865 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-10BQ100-M3/5BT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.59V Max. forward impulse current: 38A Kind of package: 13 inch reel Quantity in set/package: 3200pcs. |
auf Bestellung 2586 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-10BQ100HM3/5BT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.82V Max. forward impulse current: 780A Kind of package: 13 inch reel Quantity in set/package: 3200pcs. Capacitance: 65pF Application: automotive industry |
auf Bestellung 3225 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2307BDS-T1-E3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.5A Pulsed drain current: -12A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 78mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SI2307CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.2A Gate charge: 6.2nC On-state resistance: 138mΩ Power dissipation: 1.8W Gate-source voltage: ±20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SMAJ15A-E3/61 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 16.7÷18.5V; 16.4A; unidirectional; SMA; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Technology: TransZorb® |
auf Bestellung 3234 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP240PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 12A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 506 Stücke: Lieferzeit 14-21 Tag (e) |
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T63XB103KT20 | VISHAY |
Category: 1/4 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT Resistance: 10kΩ Power: 0.25W Tolerance: ±10% Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Mounting: THT Terminal pitch: 2.5x2.5mm Torque: 1Ncm Potentiometer standard - inch: 1/4" Number of electrical turns: 13 ±2 Number of mechanical turns: 15 ±5 Temperature coefficient: 100ppm/°C Operating voltage: 250V Manufacturer series: T63XB Track material: cermet Kind of potentiometer: multiturn |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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T63YB103KT20 | VISHAY |
Category: 1/4 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT Resistance: 10kΩ Power: 0.25W Tolerance: ±10% Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Mounting: THT Terminal pitch: 2.5x2.5mm Torque: 1Ncm Potentiometer standard - inch: 1/4" Number of electrical turns: 13 ±2 Number of mechanical turns: 15 ±5 Temperature coefficient: 100ppm/°C Operating voltage: 250V Manufacturer series: T63YB Track material: cermet Kind of potentiometer: multiturn |
auf Bestellung 889 Stücke: Lieferzeit 14-21 Tag (e) |
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T93XB103KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear Resistance: 10kΩ Power: 0.5W Tolerance: ±10% Body dimensions: 9.8x9.8x5mm Operating temperature: -55...125°C IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Kind of potentiometer: multiturn Mounting: THT Manufacturer series: T93XB Terminal pitch: 2.5x2.5mm Torque: 1.5Ncm Potentiometer standard - inch: 3/8" Number of electrical turns: 19 ±2 Number of mechanical turns: 22 ±5 Temperature coefficient: 100ppm/°C Operating voltage: 250V Engineering PN: 64Z; 67Z; 3296Z Track material: cermet |
auf Bestellung 511 Stücke: Lieferzeit 14-21 Tag (e) |
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T93YB103KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear Resistance: 10kΩ Power: 0.5W Tolerance: ±10% Body dimensions: 9.8x9.8x5mm Operating temperature: -55...125°C IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Kind of potentiometer: multiturn Mounting: THT Manufacturer series: T93YB Terminal pitch: 2.5x2.5mm Torque: 1.5Ncm Potentiometer standard - inch: 3/8" Number of electrical turns: 19 ±2 Number of mechanical turns: 22 ±5 Temperature coefficient: 100ppm/°C Operating voltage: 250V Engineering PN: 64Y; 67Y; 3296Y Track material: cermet |
auf Bestellung 4007 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5400-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 3A; 13 inch reel; Ifsm: 200A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 200A Case: DO201AD Max. forward voltage: 1.2V Quantity in set/package: 1400pcs. Capacitance: 30pF Leakage current: 0.5mA |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-36MT60 | VISHAY |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.6kV Load current: 35A Max. forward impulse current: 475A Electrical mounting: THT Version: square Max. forward voltage: 1.19V Leads: connectors FASTON Leads dimensions: 6.3x0.8mm Case: D-63 Kind of package: bulk |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHB12N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SIHB12N60ET1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SIHF12N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SIHP12N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BZX55C13-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 13V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 14900 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP22N50APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 277W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP244PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 9.7A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 213 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Kind of channel: enhancement Gate charge: 0.14µC Kind of package: tube |
auf Bestellung 364 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP254PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 23A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 92A |
auf Bestellung 407 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP260PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 29A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 461 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP264PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 24A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 64 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE6.8CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 143A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 2mA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
auf Bestellung 499 Stücke: Lieferzeit 14-21 Tag (e) |
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SS34-E3/57T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs. Mounting: SMD Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A Quantity in set/package: 850pcs. Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode Kind of package: 7 inch reel Max. forward voltage: 0.5V |
auf Bestellung 1208 Stücke: Lieferzeit 14-21 Tag (e) |
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| SS34-E3/9AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel Mounting: SMD Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A Quantity in set/package: 3500pcs. Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode Kind of package: 13 inch reel Leakage current: 20mA Max. forward voltage: 0.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MBR20100CT-E3/4W | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.75V Kind of package: tube Quantity in set/package: 50pcs. Max. forward impulse current: 150A Heatsink thickness: 1.14...1.39mm |
auf Bestellung 483 Stücke: Lieferzeit 14-21 Tag (e) |
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| IHLP5050CEER100M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 10uH; 7A; 30.4mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Type of inductor: wire Inductance: 10µH Operating current: 7A Resistance: 30.4mΩ Tolerance: ±20% Operating temperature: -55...125°C Body dimensions: 12.9x12.9x3.5mm Manufacturer series: IHLP Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IHLP5050CEER1R0M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 1uH; 24A; 3.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 1µH Resistance: 3.3mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 24A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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IHLP5050CEER1R5M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 1.5uH; 19A; 5.1mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 1.5µH Resistance: 5.1mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 19A Tolerance: ±20% |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IHLP5050CEER2R2M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 2.2uH; 16A; 7.2mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 2.2µH Resistance: 7.2mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 16A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IHLP5050CEER3R3M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 3.3uH; 12A; 11mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 3.3µH Resistance: 11mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 12A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IHLP5050CEER4R7M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 4.7uH; 10A; 14.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 4.7µH Resistance: 14.3mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 10A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IHLP5050CEER5R6M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 5.6uH; 9.5A; 18.3mΩ; ±20%; IHLP; -55÷125°C Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 5.6µH Resistance: 18.3mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 9.5A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IHLP5050CEER6R8M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 6.8uH; 9A; 19.8mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 6.8µH Resistance: 19.8mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 9A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IHLP5050CEERR47M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 0.47uH; 32A; 1.6mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 0.47µH Resistance: 1.6mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 32A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IHLP5050CEERR68M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 0.68uH; 28A; 2.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 0.68µH Resistance: 2.3mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 28A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IHLP5050EZER100M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 10uH; 9A; 21.4mΩ; ±20%; IHLP; 12.9x12.9x5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 10µH Resistance: 21.4mΩ Body dimensions: 12.9x12.9x5mm Operating current: 9A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IHLP5050EZER2R2M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 2.2uH; 20A; 4.6mΩ; ±20%; IHLP; 12.9x12.9x5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 2.2µH Resistance: 4.6mΩ Body dimensions: 12.9x12.9x5mm Operating current: 20A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IHLP5050EZER3R3M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 3.3uH; 15A; 7.7mΩ; ±20%; IHLP; 12.9x12.9x5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 3.3µH Resistance: 7.7mΩ Body dimensions: 12.9x12.9x5mm Operating current: 15A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IHLP5050EZER4R7M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 4.7uH; 12A; 12.8mΩ; ±20%; IHLP; 12.9x12.9x5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 4.7µH Resistance: 12.8mΩ Body dimensions: 12.9x12.9x5mm Operating current: 12A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IHLP5050EZER6R8M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 6.8uH; 11A; 15.4mΩ; ±20%; IHLP; 12.9x12.9x5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 6.8µH Resistance: 15.4mΩ Body dimensions: 12.9x12.9x5mm Operating current: 11A Tolerance: ±20% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IHLP5050FDER100M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 10uH; 10A; 16.4mΩ; ±20%; IHLP; 12.9x12.9x6.4mm Type of inductor: wire Mounting: SMD Inductance: 10µH Operating current: 10A Resistance: 16.4mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x6.4mm Operating temperature: -55...125°C Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CRCW120610K0JNTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; 200V; -55÷155°C
Tolerance: ±5%
Resistance: 10kΩ
Operating temperature: -55...155°C
Power: 0.25W
Mounting: SMD
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; 200V; -55÷155°C
Tolerance: ±5%
Resistance: 10kΩ
Operating temperature: -55...155°C
Power: 0.25W
Mounting: SMD
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
auf Bestellung 9900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2700+ | 0.027 EUR |
| 8100+ | 0.0089 EUR |
| 9900+ | 0.0073 EUR |
| SFH6156-2 | ![]() |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
auf Bestellung 627 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 224+ | 0.32 EUR |
| 248+ | 0.29 EUR |
| 265+ | 0.27 EUR |
| 285+ | 0.25 EUR |
| 500+ | 0.21 EUR |
| SFH6156-2T |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
auf Bestellung 3173 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 234+ | 0.31 EUR |
| 262+ | 0.27 EUR |
| 278+ | 0.26 EUR |
| 500+ | 0.21 EUR |
| SFH6156-2X001T |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4001-E3/54 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Capacitance: 15pF
auf Bestellung 5594 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 705+ | 0.1 EUR |
| 782+ | 0.092 EUR |
| 1055+ | 0.068 EUR |
| 1437+ | 0.05 EUR |
| 1640+ | 0.044 EUR |
| 2500+ | 0.037 EUR |
| 5500+ | 0.032 EUR |
| BAT54WS-E3-08 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 7 inch reel
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Max. load current: 0.3A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 7 inch reel
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Max. load current: 0.3A
auf Bestellung 658 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 500+ | 0.14 EUR |
| 658+ | 0.11 EUR |
| IRFP9140PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.59 EUR |
| 25+ | 2.96 EUR |
| 27+ | 2.66 EUR |
| 50+ | 2.43 EUR |
| 100+ | 2.19 EUR |
| 1N4004-E3/54 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Capacitance: 15pF
auf Bestellung 2332 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 582+ | 0.12 EUR |
| 787+ | 0.091 EUR |
| 900+ | 0.08 EUR |
| 1007+ | 0.071 EUR |
| 1134+ | 0.063 EUR |
| 1500+ | 0.058 EUR |
| 1N4004-E3/73 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
auf Bestellung 25714 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 400+ | 0.18 EUR |
| 587+ | 0.12 EUR |
| 765+ | 0.094 EUR |
| 1000+ | 0.084 EUR |
| 3000+ | 0.07 EUR |
| 6000+ | 0.063 EUR |
| 9000+ | 0.059 EUR |
| 24000+ | 0.05 EUR |
| 1N4004GP-E3/54 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Reverse recovery time: 2µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Reverse recovery time: 2µs
auf Bestellung 4047 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 127+ | 0.57 EUR |
| 190+ | 0.38 EUR |
| 253+ | 0.28 EUR |
| 500+ | 0.2 EUR |
| IRF640PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
auf Bestellung 2048 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.02 EUR |
| 40+ | 1.79 EUR |
| 53+ | 1.36 EUR |
| 100+ | 1.2 EUR |
| 250+ | 1.09 EUR |
| 500+ | 1.04 EUR |
| IRF640SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
auf Bestellung 1230 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.16 EUR |
| 59+ | 1.22 EUR |
| IRF640STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT54A-E3-08 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
auf Bestellung 1295 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 794+ | 0.09 EUR |
| 977+ | 0.073 EUR |
| 1139+ | 0.063 EUR |
| 1223+ | 0.058 EUR |
| BAT54A-HE3-08 |
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
auf Bestellung 1630 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 785+ | 0.092 EUR |
| 1245+ | 0.057 EUR |
| 1410+ | 0.051 EUR |
| BAT54S-E3-08 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.24V
Max. load current: 0.3A
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.24V
Max. load current: 0.3A
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
auf Bestellung 2406 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 747+ | 0.096 EUR |
| 1007+ | 0.071 EUR |
| 1266+ | 0.056 EUR |
| 1409+ | 0.051 EUR |
| BAT54S-HE3-08 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
auf Bestellung 3865 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 705+ | 0.1 EUR |
| 1115+ | 0.064 EUR |
| 1265+ | 0.057 EUR |
| 3000+ | 0.054 EUR |
| VS-10BQ100-M3/5BT |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Max. forward impulse current: 38A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Max. forward impulse current: 38A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
auf Bestellung 2586 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 224+ | 0.32 EUR |
| 241+ | 0.3 EUR |
| 293+ | 0.24 EUR |
| 323+ | 0.22 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.14 EUR |
| 1300+ | 0.13 EUR |
| VS-10BQ100HM3/5BT |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 780A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Capacitance: 65pF
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 780A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Capacitance: 65pF
Application: automotive industry
auf Bestellung 3225 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 199+ | 0.36 EUR |
| 302+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| SI2307BDS-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI2307CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Gate charge: 6.2nC
On-state resistance: 138mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Gate charge: 6.2nC
On-state resistance: 138mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ15A-E3/61 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷18.5V; 16.4A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷18.5V; 16.4A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Technology: TransZorb®
auf Bestellung 3234 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 410+ | 0.17 EUR |
| 521+ | 0.14 EUR |
| 633+ | 0.11 EUR |
| 774+ | 0.092 EUR |
| 1000+ | 0.073 EUR |
| 1800+ | 0.066 EUR |
| IRFP240PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 506 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.35 EUR |
| 41+ | 1.77 EUR |
| 49+ | 1.49 EUR |
| 53+ | 1.37 EUR |
| 55+ | 1.32 EUR |
| 100+ | 1.27 EUR |
| 250+ | 1.23 EUR |
| 500+ | 1.2 EUR |
| T63XB103KT20 |
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Hersteller: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Terminal pitch: 2.5x2.5mm
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Manufacturer series: T63XB
Track material: cermet
Kind of potentiometer: multiturn
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Terminal pitch: 2.5x2.5mm
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Manufacturer series: T63XB
Track material: cermet
Kind of potentiometer: multiturn
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.09 EUR |
| 20+ | 3.76 EUR |
| 21+ | 3.56 EUR |
| 22+ | 3.29 EUR |
| 24+ | 3.02 EUR |
| T63YB103KT20 |
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Hersteller: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Terminal pitch: 2.5x2.5mm
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Manufacturer series: T63YB
Track material: cermet
Kind of potentiometer: multiturn
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Terminal pitch: 2.5x2.5mm
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Manufacturer series: T63YB
Track material: cermet
Kind of potentiometer: multiturn
auf Bestellung 889 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.79 EUR |
| 29+ | 2.47 EUR |
| 50+ | 2.35 EUR |
| 100+ | 2.2 EUR |
| 200+ | 2.17 EUR |
| T93XB103KT20 |
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Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93XB
Terminal pitch: 2.5x2.5mm
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Engineering PN: 64Z; 67Z; 3296Z
Track material: cermet
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93XB
Terminal pitch: 2.5x2.5mm
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Engineering PN: 64Z; 67Z; 3296Z
Track material: cermet
auf Bestellung 511 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.69 EUR |
| 57+ | 1.26 EUR |
| 61+ | 1.17 EUR |
| 100+ | 1.13 EUR |
| T93YB103KT20 |
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Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93YB
Terminal pitch: 2.5x2.5mm
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Engineering PN: 64Y; 67Y; 3296Y
Track material: cermet
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93YB
Terminal pitch: 2.5x2.5mm
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Engineering PN: 64Y; 67Y; 3296Y
Track material: cermet
auf Bestellung 4007 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.82 EUR |
| 47+ | 1.53 EUR |
| 51+ | 1.42 EUR |
| 54+ | 1.34 EUR |
| 100+ | 1.27 EUR |
| 200+ | 1.2 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.06 EUR |
| 1N5400-E3/54 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Quantity in set/package: 1400pcs.
Capacitance: 30pF
Leakage current: 0.5mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Quantity in set/package: 1400pcs.
Capacitance: 30pF
Leakage current: 0.5mA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| VS-36MT60 |
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Hersteller: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 475A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.19V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: D-63
Kind of package: bulk
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 475A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.19V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: D-63
Kind of package: bulk
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.39 EUR |
| SIHB12N60E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHB12N60ET1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHF12N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHP12N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55C13-TAP | ![]() |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 14900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1250+ | 0.057 EUR |
| 2490+ | 0.029 EUR |
| 3110+ | 0.023 EUR |
| 3230+ | 0.022 EUR |
| IRFP22N50APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.58 EUR |
| 19+ | 3.96 EUR |
| 25+ | 3.69 EUR |
| 50+ | 3.5 EUR |
| 100+ | 3.32 EUR |
| 125+ | 3.27 EUR |
| IRFP244PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.7A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.7A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.02 EUR |
| 28+ | 2.57 EUR |
| 31+ | 2.37 EUR |
| 34+ | 2.14 EUR |
| 50+ | 2.03 EUR |
| 100+ | 1.93 EUR |
| 125+ | 1.9 EUR |
| IRFP250PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.14µC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.14µC
Kind of package: tube
auf Bestellung 364 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.96 EUR |
| 27+ | 2.75 EUR |
| 28+ | 2.62 EUR |
| 30+ | 2.46 EUR |
| IRFP254PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 92A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 92A
auf Bestellung 407 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.6 EUR |
| 24+ | 2.99 EUR |
| 26+ | 2.76 EUR |
| 50+ | 2.57 EUR |
| 100+ | 2.4 EUR |
| 125+ | 2.35 EUR |
| 250+ | 2.16 EUR |
| IRFP260PBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 461 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.58 EUR |
| 25+ | 3.2 EUR |
| 50+ | 3.03 EUR |
| 100+ | 2.9 EUR |
| IRFP264PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.78 EUR |
| 16+ | 4.62 EUR |
| 25+ | 4.19 EUR |
| 50+ | 3.93 EUR |
| 1.5KE6.8CA-E3/54 |
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Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 499 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 135+ | 0.53 EUR |
| 175+ | 0.41 EUR |
| SS34-E3/57T |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Max. forward voltage: 0.5V
auf Bestellung 1208 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 210+ | 0.34 EUR |
| 250+ | 0.29 EUR |
| 500+ | 0.24 EUR |
| 850+ | 0.2 EUR |
| SS34-E3/9AT |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Mounting: SMD
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 3500pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 13 inch reel
Leakage current: 20mA
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Mounting: SMD
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 3500pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 13 inch reel
Leakage current: 20mA
Max. forward voltage: 0.5V
Produkt ist nicht verfügbar
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| MBR20100CT-E3/4W |
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Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
auf Bestellung 483 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 54+ | 1.34 EUR |
| 57+ | 1.26 EUR |
| 65+ | 1.12 EUR |
| 70+ | 1.03 EUR |
| 100+ | 0.94 EUR |
| IHLP5050CEER100M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 7A; 30.4mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Type of inductor: wire
Inductance: 10µH
Operating current: 7A
Resistance: 30.4mΩ
Tolerance: ±20%
Operating temperature: -55...125°C
Body dimensions: 12.9x12.9x3.5mm
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Mounting: SMD
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 7A; 30.4mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Type of inductor: wire
Inductance: 10µH
Operating current: 7A
Resistance: 30.4mΩ
Tolerance: ±20%
Operating temperature: -55...125°C
Body dimensions: 12.9x12.9x3.5mm
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IHLP5050CEER1R0M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 24A; 3.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1µH
Resistance: 3.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 24A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 24A; 3.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1µH
Resistance: 3.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 24A
Tolerance: ±20%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IHLP5050CEER1R5M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1.5uH; 19A; 5.1mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1.5µH
Resistance: 5.1mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 19A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 1.5uH; 19A; 5.1mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1.5µH
Resistance: 5.1mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 19A
Tolerance: ±20%
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.19 EUR |
| 500+ | 0.7 EUR |
| IHLP5050CEER2R2M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 16A; 7.2mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 7.2mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 16A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 16A; 7.2mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 7.2mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 16A
Tolerance: ±20%
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IHLP5050CEER3R3M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 12A; 11mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 11mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 12A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 12A; 11mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 11mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 12A
Tolerance: ±20%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IHLP5050CEER4R7M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 10A; 14.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 4.7µH
Resistance: 14.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 10A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 10A; 14.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 4.7µH
Resistance: 14.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 10A
Tolerance: ±20%
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| IHLP5050CEER5R6M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 5.6uH; 9.5A; 18.3mΩ; ±20%; IHLP; -55÷125°C
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 5.6µH
Resistance: 18.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9.5A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 5.6uH; 9.5A; 18.3mΩ; ±20%; IHLP; -55÷125°C
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 5.6µH
Resistance: 18.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9.5A
Tolerance: ±20%
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| IHLP5050CEER6R8M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 9A; 19.8mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 6.8µH
Resistance: 19.8mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 9A; 19.8mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 6.8µH
Resistance: 19.8mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9A
Tolerance: ±20%
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| IHLP5050CEERR47M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 0.47uH; 32A; 1.6mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.47µH
Resistance: 1.6mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 32A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 0.47uH; 32A; 1.6mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.47µH
Resistance: 1.6mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 32A
Tolerance: ±20%
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| IHLP5050CEERR68M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 0.68uH; 28A; 2.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.68µH
Resistance: 2.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 28A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 0.68uH; 28A; 2.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.68µH
Resistance: 2.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 28A
Tolerance: ±20%
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| IHLP5050EZER100M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 9A; 21.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 10µH
Resistance: 21.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 9A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 9A; 21.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 10µH
Resistance: 21.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 9A
Tolerance: ±20%
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| IHLP5050EZER2R2M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 20A; 4.6mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 4.6mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 20A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 20A; 4.6mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 4.6mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 20A
Tolerance: ±20%
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| IHLP5050EZER3R3M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 15A; 7.7mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 7.7mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 15A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 15A; 7.7mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 7.7mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 15A
Tolerance: ±20%
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| IHLP5050EZER4R7M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 12A; 12.8mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 4.7µH
Resistance: 12.8mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 12A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 12A; 12.8mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 4.7µH
Resistance: 12.8mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 12A
Tolerance: ±20%
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| IHLP5050EZER6R8M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 11A; 15.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 6.8µH
Resistance: 15.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 11A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 11A; 15.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 6.8µH
Resistance: 15.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 11A
Tolerance: ±20%
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| IHLP5050FDER100M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 10A; 16.4mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Type of inductor: wire
Mounting: SMD
Inductance: 10µH
Operating current: 10A
Resistance: 16.4mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x6.4mm
Operating temperature: -55...125°C
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 10A; 16.4mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Type of inductor: wire
Mounting: SMD
Inductance: 10µH
Operating current: 10A
Resistance: 16.4mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x6.4mm
Operating temperature: -55...125°C
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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