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IHLP5050CEERR47M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966CC748&compId=IHLP-5050CE-01.pdf?ci_sign=e4df8cd69aaf36b90121ae1c03b409b64531da04 Category: Inductors
Description: Inductor: wire; SMD; 0.47uH; 32A; 1.6mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.47µH
Resistance: 1.6mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 32A
Tolerance: ±20%
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IHLP5050CEERR68M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966CC748&compId=IHLP-5050CE-01.pdf?ci_sign=e4df8cd69aaf36b90121ae1c03b409b64531da04 Category: Inductors
Description: Inductor: wire; SMD; 0.68uH; 28A; 2.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.68µH
Resistance: 2.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 28A
Tolerance: ±20%
Produkt ist nicht verfügbar
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IHLP5050EZER100M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31 Category: Inductors
Description: Inductor: wire; SMD; 10uH; 9A; 21.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 10µH
Resistance: 21.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 9A
Tolerance: ±20%
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IHLP5050EZER2R2M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31 Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 20A; 4.6mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 4.6mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 20A
Tolerance: ±20%
Produkt ist nicht verfügbar
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IHLP5050EZER3R3M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31 Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 15A; 7.7mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 7.7mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 15A
Tolerance: ±20%
Produkt ist nicht verfügbar
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IHLP5050EZER4R7M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31 Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 12A; 12.8mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 4.7µH
Resistance: 12.8mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 12A
Tolerance: ±20%
Produkt ist nicht verfügbar
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IHLP5050EZER6R8M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31 Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 11A; 15.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 6.8µH
Resistance: 15.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 11A
Tolerance: ±20%
Produkt ist nicht verfügbar
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IHLP5050FDER100M01 VISHAY IHLP-5050FD-01.pdf Category: Inductors
Description: Inductor: wire; SMD; 10uH; 10A; 16.4mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Type of inductor: wire
Mounting: SMD
Inductance: 10µH
Operating current: 10A
Resistance: 16.4mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x6.4mm
Operating temperature: -55...125°C
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Produkt ist nicht verfügbar
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IHLP5050FDER1R0M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE297396712748&compId=IHLP-5050FD-01.pdf?ci_sign=71e68c10ed21cba5d64405689dd28864b84c094e Category: Inductors
Description: Inductor: wire; SMD; 1uH; 32A; 1.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1µH
Resistance: 1.7mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 32A
Tolerance: ±20%
Produkt ist nicht verfügbar
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IHLP5050FDER2R2M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE297396712748&compId=IHLP-5050FD-01.pdf?ci_sign=71e68c10ed21cba5d64405689dd28864b84c094e Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 22A; 3.5mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 3.5mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 22A
Tolerance: ±20%
Produkt ist nicht verfügbar
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IHLP5050FDER3R3M01 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE297396712748&compId=IHLP-5050FD-01.pdf?ci_sign=71e68c10ed21cba5d64405689dd28864b84c094e Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 18A; 5.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 5.7mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 18A
Tolerance: ±20%
Produkt ist nicht verfügbar
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2N7002-T1-E3 2N7002-T1-E3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F9687FD84F4469&compId=2N7002-T1-E3.pdf?ci_sign=d4ff830a64f567bc4e9db74e5d3beab269f72df4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 80mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
Mindestbestellmenge: 7
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2N7002K-T1-E3 2N7002K-T1-E3 VISHAY 2n7002k.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
Produkt ist nicht verfügbar
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2N7002K-T1-GE3 2N7002K-T1-GE3 VISHAY 2n7002k.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 4931 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
385+0.19 EUR
435+0.16 EUR
564+0.13 EUR
625+0.11 EUR
789+0.091 EUR
3000+0.07 EUR
Mindestbestellmenge: 295
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SIHB15N65E-GE3 VISHAY sihb15n65e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHF15N65E-GE3 VISHAY sihf15n65e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHP15N65E-GE3 VISHAY sihp15n65e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SF1600-TAP SF1600-TAP VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCB037BD61A6E143&compId=sf1200_1600.pdf?ci_sign=0f55a1b769b5efe582ed01f23a3d8fe8f04f9ed6 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns
Mounting: THT
Type of diode: rectifying
Case: SOD57
Semiconductor structure: single diode
Reverse recovery time: 75ns
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. forward voltage: 3.4V
Load current: 1A
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Max. off-state voltage: 1.6kV
auf Bestellung 1803 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
185+0.39 EUR
208+0.34 EUR
Mindestbestellmenge: 157
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SS16-E3/5AT SS16-E3/5AT VISHAY ss12.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Leakage current: 5mA
Quantity in set/package: 7500pcs.
auf Bestellung 5506 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
625+0.11 EUR
699+0.1 EUR
736+0.097 EUR
837+0.086 EUR
1000+0.081 EUR
2500+0.074 EUR
5000+0.069 EUR
Mindestbestellmenge: 500
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SS16-E3/61T SS16-E3/61T VISHAY ss12.pdf description Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
auf Bestellung 6016 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
353+0.2 EUR
382+0.19 EUR
480+0.15 EUR
542+0.13 EUR
770+0.093 EUR
1000+0.076 EUR
1300+0.07 EUR
1800+0.062 EUR
Mindestbestellmenge: 313
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SS16HE3_B/H SS16HE3_B/H VISHAY ss12.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Application: automotive industry
auf Bestellung 7028 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
336+0.21 EUR
379+0.19 EUR
421+0.17 EUR
477+0.15 EUR
569+0.13 EUR
667+0.11 EUR
1000+0.093 EUR
Mindestbestellmenge: 264
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CRCW04024K70FKED CRCW04024K70FKED VISHAY crcw0402_dbc.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; 50V; -55÷155°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Operating voltage: 50V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Mounting: SMD
auf Bestellung 23107 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
2084+0.034 EUR
4546+0.016 EUR
7622+0.0094 EUR
9417+0.0076 EUR
12255+0.0058 EUR
14793+0.0048 EUR
17606+0.0041 EUR
20662+0.0035 EUR
Mindestbestellmenge: 556
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CRCW04024K70FKTDBC CRCW04024K70FKTDBC VISHAY crcw0402_dbc.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; CRCW0402; 50V
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Operating voltage: 50V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Manufacturer series: CRCW0402
Mounting: SMD
auf Bestellung 31100 Stücke:
Lieferzeit 14-21 Tag (e)
3900+0.018 EUR
10300+0.007 EUR
31100+0.0023 EUR
Mindestbestellmenge: 3900
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CRCW0603240RFKTABC CRCW0603240RFKTABC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7 Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 240Ω; 0.1W; ±1%; 75V; -55÷155°C
Mounting: SMD
Case - inch: 0603
Resistance: 240Ω
Operating temperature: -55...155°C
Tolerance: ±1%
Power: 0.1W
Operating voltage: 75V
Case - mm: 1608
Type of resistor: thick film
auf Bestellung 24600 Stücke:
Lieferzeit 14-21 Tag (e)
2400+0.03 EUR
4600+0.016 EUR
7700+0.0094 EUR
18400+0.0039 EUR
Mindestbestellmenge: 2400
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IRF840PBF IRF840PBF VISHAY IRF840PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 2156 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
53+1.37 EUR
55+1.32 EUR
58+1.24 EUR
65+1.1 EUR
100+1.04 EUR
150+1.02 EUR
250+0.99 EUR
500+0.94 EUR
Mindestbestellmenge: 49
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BZX55B10-TAP BZX55B10-TAP VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C9DC6FD0F66469&compId=BZX55C10-TAP.pdf?ci_sign=1c457e90db8f9db19431e4453446789e4dc6d20d Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
auf Bestellung 426 Stücke:
Lieferzeit 14-21 Tag (e)
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GRC00JG4702W00L GRC00JG4702W00L VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D58F0C6CC840D2&compId=GRC.pdf?ci_sign=92d3c6a8fa5a96a5ca5511c797a4e4aa77bdafd1 Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
auf Bestellung 1674 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.26 EUR
99+0.73 EUR
124+0.58 EUR
150+0.53 EUR
300+0.5 EUR
600+0.49 EUR
Mindestbestellmenge: 57
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GRC00JG3321E00L GRC00JG3321E00L VISHAY GRC.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 16x25mm
Service life: 2000h
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
115+0.62 EUR
143+0.5 EUR
179+0.4 EUR
Mindestbestellmenge: 67
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IRF530PBF IRF530PBF VISHAY IRF530PBF.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2996 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
113+0.64 EUR
122+0.59 EUR
142+0.51 EUR
148+0.49 EUR
500+0.46 EUR
Mindestbestellmenge: 91
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IRF530SPBF IRF530SPBF VISHAY irf530s.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.25 EUR
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BZX55C10-TAP BZX55C10-TAP VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C9DC6FD0F66469&compId=BZX55C10-TAP.pdf?ci_sign=1c457e90db8f9db19431e4453446789e4dc6d20d description Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 1049 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
1000+0.072 EUR
1049+0.069 EUR
Mindestbestellmenge: 625
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BZX55C12-TAP BZX55C12-TAP VISHAY BZX55C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 14075 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
758+0.094 EUR
1238+0.058 EUR
1548+0.046 EUR
1793+0.04 EUR
2075+0.034 EUR
2500+0.029 EUR
5000+0.027 EUR
Mindestbestellmenge: 556
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MUR460-E3/54 MUR460-E3/54 VISHAY mur440.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.05V
Reverse recovery time: 50ns
Quantity in set/package: 1400pcs.
auf Bestellung 1387 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
169+0.42 EUR
197+0.36 EUR
500+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 120
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1N4007-E3/54 1N4007-E3/54 VISHAY 1n400x.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Quantity in set/package: 5500pcs.
auf Bestellung 22884 Stücke:
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358+0.2 EUR
511+0.14 EUR
870+0.082 EUR
1153+0.062 EUR
1197+0.06 EUR
1337+0.053 EUR
1500+0.05 EUR
2000+0.048 EUR
5500+0.043 EUR
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1N4007-E3/73 1N4007-E3/73 VISHAY 1n400x.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
auf Bestellung 9433 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
424+0.17 EUR
500+0.14 EUR
845+0.085 EUR
1169+0.061 EUR
1323+0.054 EUR
3000+0.046 EUR
6000+0.042 EUR
9000+0.04 EUR
Mindestbestellmenge: 334
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293D476X0025D2TE3 293D476X0025D2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case: D
Case - inch: 2917
auf Bestellung 2802 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
114+0.63 EUR
122+0.59 EUR
125+0.57 EUR
200+0.55 EUR
500+0.54 EUR
1000+0.52 EUR
2500+0.51 EUR
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293D476X9025D2TE3 293D476X9025D2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 25V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case: D
Case - inch: 2917
auf Bestellung 2022 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
152+0.47 EUR
179+0.4 EUR
187+0.38 EUR
500+0.36 EUR
1000+0.35 EUR
Mindestbestellmenge: 85
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VJ1206Y104KXACW1BC VJ1206Y104KXACW1BC VISHAY vjw1bcbascomseries.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Kind of capacitor: MLCC
auf Bestellung 7452 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
2500+0.029 EUR
2907+0.025 EUR
3165+0.023 EUR
3312+0.022 EUR
4000+0.02 EUR
Mindestbestellmenge: 715
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SM6T6V8A-E3/52 SM6T6V8A-E3/52 VISHAY pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA290988BB91420C7&compId=sm6t.pdf?ci_sign=6a01ce312076e467c6748a036c14f9e36ba96088 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
auf Bestellung 3315 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
491+0.15 EUR
506+0.14 EUR
562+0.13 EUR
596+0.12 EUR
633+0.11 EUR
685+0.1 EUR
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1.5KE6.8A-E3/54 1.5KE6.8A-E3/54 VISHAY 15ke_Ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
auf Bestellung 515 Stücke:
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88+0.82 EUR
97+0.74 EUR
137+0.52 EUR
500+0.39 EUR
Mindestbestellmenge: 88
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1N4148-TAP 1N4148-TAP VISHAY 1N4148-TAP.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 8ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Kind of package: Ammo Pack
Max. forward impulse current: 2A
Case: DO35
Reverse recovery time: 8ns
Max. load current: 0.5A
auf Bestellung 34772 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
1220+0.059 EUR
1701+0.042 EUR
1946+0.037 EUR
2565+0.028 EUR
2841+0.025 EUR
3125+0.023 EUR
10000+0.019 EUR
20000+0.018 EUR
Mindestbestellmenge: 625
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SIHA20N50E-GE3 VISHAY siha20n50e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHB20N50E-GE3 VISHAY sihb20n50e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHG20N50E-GE3 VISHAY sihg20n50e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SiHH20N50E-T1-GE3 VISHAY sihh20n50e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHP20N50E-GE3 VISHAY sihp20n50e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BPW34 BPW34 VISHAY BPW34-V.pdf Category: Photodiodes
Description: PIN IR photodiode; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Active area: 7.5mm2
Dimensions: 5.4x4.3x3.2mm
Viewing angle: 65°
Radiant power: 215mW
auf Bestellung 2781 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
115+0.62 EUR
126+0.57 EUR
136+0.53 EUR
145+0.49 EUR
500+0.42 EUR
1000+0.39 EUR
Mindestbestellmenge: 88
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BPW34S BPW34S VISHAY BPW34-V.pdf description Category: Photodiodes
Description: PIN IR photodiode; DIL; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Case: DIL
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Viewing angle: 65°
Active area: 7.5mm2
Dimensions: 5.4x4.3x3.2mm
Radiant power: 215mW
auf Bestellung 30 Stücke:
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30+2.39 EUR
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VBPW34FAS VBPW34FAS VISHAY VBPW34FAS-DTE.pdf Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 780...1050nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
LED lens: black
auf Bestellung 2077 Stücke:
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74+0.97 EUR
86+0.83 EUR
105+0.68 EUR
116+0.62 EUR
1000+0.45 EUR
2000+0.41 EUR
Mindestbestellmenge: 74
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VBPW34S VBPW34S VISHAY VBPW34S-DTE.pdf Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 430...1100nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
Produkt ist nicht verfügbar
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MAL213661101E3 MAL213661101E3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8FD02614C950E0C4&compId=136RVI.PDF?ci_sign=f3f08a0a3667306c830919d1612f7d55110c1a61 Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 100uF; 50VDC; Ø10x12mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 100µF
Operating voltage: 50V DC
Body dimensions: Ø10x12mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 4000h
Operating temperature: -55...105°C
Height: 12mm
Diameter: 10mm
auf Bestellung 1377 Stücke:
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44+1.66 EUR
68+1.06 EUR
87+0.82 EUR
100+0.72 EUR
200+0.62 EUR
250+0.59 EUR
500+0.58 EUR
Mindestbestellmenge: 44
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IRF9630PBF IRF9630PBF VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A45B068556469&compId=IRF9630PBF.pdf?ci_sign=e2cb1b3308e421be576b913d5f89ef44f64440d7 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: -26A
auf Bestellung 399 Stücke:
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42+1.72 EUR
46+1.59 EUR
54+1.34 EUR
100+1.22 EUR
250+1.04 EUR
Mindestbestellmenge: 42
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IRF9630SPBF IRF9630SPBF VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BD90AABD95160143&compId=IRF9630S.pdf?ci_sign=b0102a62d4142948f664c7b9568ff7dcac603c74 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: -26A
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.72 EUR
46+1.59 EUR
51+1.42 EUR
100+1.32 EUR
250+1.2 EUR
Mindestbestellmenge: 42
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IRFI9630GPBF IRFI9630GPBF VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8AC132D3002469&compId=IRFI9630GPBF.pdf?ci_sign=fb760884a4196e9c1bd01f7ae8a92d2afdcb62ea Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.7A; 35W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 341 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.29 EUR
44+1.63 EUR
52+1.39 EUR
100+1.3 EUR
250+1.19 EUR
Mindestbestellmenge: 32
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SIHJ7N65E-T1-GE3 VISHAY sihj7n65e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 17A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CRCW12060000Z0TABC CRCW12060000Z0TABC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7 Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 0Ω; 0.25W; ±5%; 200V; -55÷155°C
Tolerance: ±5%
Resistance: 0Ω
Operating temperature: -55...155°C
Power: 0.25W
Mounting: SMD
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
auf Bestellung 102799 Stücke:
Lieferzeit 14-21 Tag (e)
1480+0.049 EUR
2680+0.027 EUR
10920+0.0065 EUR
13780+0.0052 EUR
19240+0.0037 EUR
20170+0.0035 EUR
50000+0.0034 EUR
100000+0.0033 EUR
Mindestbestellmenge: 1480
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BAV70-E3-08
+1
 		BAV70-E3-08 VISHAY bav70.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
auf Bestellung 10273 Stücke:
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556+0.13 EUR
770+0.093 EUR
1053+0.068 EUR
1211+0.059 EUR
1363+0.052 EUR
1548+0.046 EUR
3000+0.037 EUR
6000+0.031 EUR
9000+0.027 EUR
Mindestbestellmenge: 556
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BAV70-G3-08 BAV70-G3-08 VISHAY bav70g.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DF06M-E3/45 DF06M-E3/45 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F721CC5719E469&compId=DF02-E3-45.pdf?ci_sign=0c4b3f237372eb7e50c4f454c16431cdf84a38a6 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 659 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
158+0.45 EUR
187+0.38 EUR
210+0.34 EUR
233+0.31 EUR
264+0.27 EUR
500+0.25 EUR
Mindestbestellmenge: 64
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DF06S-E3/45 DF06S-E3/45 VISHAY dfs.pdf description Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.6kV
Load current: 1A
Case: DFS
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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IHLP5050CEERR47M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966CC748&compId=IHLP-5050CE-01.pdf?ci_sign=e4df8cd69aaf36b90121ae1c03b409b64531da04
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 0.47uH; 32A; 1.6mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.47µH
Resistance: 1.6mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 32A
Tolerance: ±20%
Produkt ist nicht verfügbar
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IHLP5050CEERR68M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966CC748&compId=IHLP-5050CE-01.pdf?ci_sign=e4df8cd69aaf36b90121ae1c03b409b64531da04
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 0.68uH; 28A; 2.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.68µH
Resistance: 2.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 28A
Tolerance: ±20%
Produkt ist nicht verfügbar
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IHLP5050EZER100M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 9A; 21.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 10µH
Resistance: 21.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 9A
Tolerance: ±20%
Produkt ist nicht verfügbar
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IHLP5050EZER2R2M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 20A; 4.6mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 4.6mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 20A
Tolerance: ±20%
Produkt ist nicht verfügbar
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IHLP5050EZER3R3M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 15A; 7.7mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 7.7mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 15A
Tolerance: ±20%
Produkt ist nicht verfügbar
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IHLP5050EZER4R7M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 12A; 12.8mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 4.7µH
Resistance: 12.8mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 12A
Tolerance: ±20%
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHLP5050EZER6R8M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE2973966F4748&compId=IHLP-5050EZ-01.pdf?ci_sign=c104ccc4c732561ddb986f616ff32feed1e81b31
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 11A; 15.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 6.8µH
Resistance: 15.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 11A
Tolerance: ±20%
Produkt ist nicht verfügbar
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IHLP5050FDER100M01 IHLP-5050FD-01.pdf
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 10A; 16.4mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Type of inductor: wire
Mounting: SMD
Inductance: 10µH
Operating current: 10A
Resistance: 16.4mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x6.4mm
Operating temperature: -55...125°C
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Produkt ist nicht verfügbar
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IHLP5050FDER1R0M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE297396712748&compId=IHLP-5050FD-01.pdf?ci_sign=71e68c10ed21cba5d64405689dd28864b84c094e
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 32A; 1.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1µH
Resistance: 1.7mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 32A
Tolerance: ±20%
Produkt ist nicht verfügbar
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IHLP5050FDER2R2M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE297396712748&compId=IHLP-5050FD-01.pdf?ci_sign=71e68c10ed21cba5d64405689dd28864b84c094e
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 22A; 3.5mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 3.5mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 22A
Tolerance: ±20%
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHLP5050FDER3R3M01 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FE297396712748&compId=IHLP-5050FD-01.pdf?ci_sign=71e68c10ed21cba5d64405689dd28864b84c094e
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 18A; 5.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 5.7mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 18A
Tolerance: ±20%
Produkt ist nicht verfügbar
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2N7002-T1-E3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F9687FD84F4469&compId=2N7002-T1-E3.pdf?ci_sign=d4ff830a64f567bc4e9db74e5d3beab269f72df4
2N7002-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 80mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
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2N7002K-T1-E3 2n7002k.pdf
2N7002K-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
Produkt ist nicht verfügbar
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2N7002K-T1-GE3 2n7002k.pdf
2N7002K-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 4931 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
385+0.19 EUR
435+0.16 EUR
564+0.13 EUR
625+0.11 EUR
789+0.091 EUR
3000+0.07 EUR
Mindestbestellmenge: 295
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SIHB15N65E-GE3 sihb15n65e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHF15N65E-GE3 sihf15n65e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHP15N65E-GE3 sihp15n65e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SF1600-TAP pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCB037BD61A6E143&compId=sf1200_1600.pdf?ci_sign=0f55a1b769b5efe582ed01f23a3d8fe8f04f9ed6
SF1600-TAP
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns
Mounting: THT
Type of diode: rectifying
Case: SOD57
Semiconductor structure: single diode
Reverse recovery time: 75ns
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. forward voltage: 3.4V
Load current: 1A
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Max. off-state voltage: 1.6kV
auf Bestellung 1803 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
185+0.39 EUR
208+0.34 EUR
Mindestbestellmenge: 157
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SS16-E3/5AT ss12.pdf
SS16-E3/5AT
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Leakage current: 5mA
Quantity in set/package: 7500pcs.
auf Bestellung 5506 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
625+0.11 EUR
699+0.1 EUR
736+0.097 EUR
837+0.086 EUR
1000+0.081 EUR
2500+0.074 EUR
5000+0.069 EUR
Mindestbestellmenge: 500
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SS16-E3/61T description ss12.pdf
SS16-E3/61T
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
auf Bestellung 6016 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
353+0.2 EUR
382+0.19 EUR
480+0.15 EUR
542+0.13 EUR
770+0.093 EUR
1000+0.076 EUR
1300+0.07 EUR
1800+0.062 EUR
Mindestbestellmenge: 313
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SS16HE3_B/H ss12.pdf
SS16HE3_B/H
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Application: automotive industry
auf Bestellung 7028 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
336+0.21 EUR
379+0.19 EUR
421+0.17 EUR
477+0.15 EUR
569+0.13 EUR
667+0.11 EUR
1000+0.093 EUR
Mindestbestellmenge: 264
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CRCW04024K70FKED crcw0402_dbc.pdf
CRCW04024K70FKED
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; 50V; -55÷155°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Operating voltage: 50V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Mounting: SMD
auf Bestellung 23107 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
2084+0.034 EUR
4546+0.016 EUR
7622+0.0094 EUR
9417+0.0076 EUR
12255+0.0058 EUR
14793+0.0048 EUR
17606+0.0041 EUR
20662+0.0035 EUR
Mindestbestellmenge: 556
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CRCW04024K70FKTDBC crcw0402_dbc.pdf
CRCW04024K70FKTDBC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; CRCW0402; 50V
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Operating voltage: 50V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Manufacturer series: CRCW0402
Mounting: SMD
auf Bestellung 31100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3900+0.018 EUR
10300+0.007 EUR
31100+0.0023 EUR
Mindestbestellmenge: 3900
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CRCW0603240RFKTABC pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7
CRCW0603240RFKTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 240Ω; 0.1W; ±1%; 75V; -55÷155°C
Mounting: SMD
Case - inch: 0603
Resistance: 240Ω
Operating temperature: -55...155°C
Tolerance: ±1%
Power: 0.1W
Operating voltage: 75V
Case - mm: 1608
Type of resistor: thick film
auf Bestellung 24600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2400+0.03 EUR
4600+0.016 EUR
7700+0.0094 EUR
18400+0.0039 EUR
Mindestbestellmenge: 2400
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IRF840PBF IRF840PBF.pdf
IRF840PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 2156 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
53+1.37 EUR
55+1.32 EUR
58+1.24 EUR
65+1.1 EUR
100+1.04 EUR
150+1.02 EUR
250+0.99 EUR
500+0.94 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B10-TAP pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C9DC6FD0F66469&compId=BZX55C10-TAP.pdf?ci_sign=1c457e90db8f9db19431e4453446789e4dc6d20d
BZX55B10-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
auf Bestellung 426 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
GRC00JG4702W00L pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D58F0C6CC840D2&compId=GRC.pdf?ci_sign=92d3c6a8fa5a96a5ca5511c797a4e4aa77bdafd1
GRC00JG4702W00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
auf Bestellung 1674 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.26 EUR
99+0.73 EUR
124+0.58 EUR
150+0.53 EUR
300+0.5 EUR
600+0.49 EUR
Mindestbestellmenge: 57
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GRC00JG3321E00L GRC.pdf
GRC00JG3321E00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 16x25mm
Service life: 2000h
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
115+0.62 EUR
143+0.5 EUR
179+0.4 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
IRF530PBF description IRF530PBF.pdf
IRF530PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2996 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
113+0.64 EUR
122+0.59 EUR
142+0.51 EUR
148+0.49 EUR
500+0.46 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
IRF530SPBF description irf530s.pdf
IRF530SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
BZX55C10-TAP description pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C9DC6FD0F66469&compId=BZX55C10-TAP.pdf?ci_sign=1c457e90db8f9db19431e4453446789e4dc6d20d
BZX55C10-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 1049 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
1000+0.072 EUR
1049+0.069 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
BZX55C12-TAP BZX55C10-TAP.pdf
BZX55C12-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 14075 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
758+0.094 EUR
1238+0.058 EUR
1548+0.046 EUR
1793+0.04 EUR
2075+0.034 EUR
2500+0.029 EUR
5000+0.027 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
MUR460-E3/54 mur440.pdf
MUR460-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.05V
Reverse recovery time: 50ns
Quantity in set/package: 1400pcs.
auf Bestellung 1387 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
169+0.42 EUR
197+0.36 EUR
500+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
1N4007-E3/54 1n400x.pdf
1N4007-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Quantity in set/package: 5500pcs.
auf Bestellung 22884 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
511+0.14 EUR
870+0.082 EUR
1153+0.062 EUR
1197+0.06 EUR
1337+0.053 EUR
1500+0.05 EUR
2000+0.048 EUR
5500+0.043 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
1N4007-E3/73 1n400x.pdf
1N4007-E3/73
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
auf Bestellung 9433 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
424+0.17 EUR
500+0.14 EUR
845+0.085 EUR
1169+0.061 EUR
1323+0.054 EUR
3000+0.046 EUR
6000+0.042 EUR
9000+0.04 EUR
Mindestbestellmenge: 334
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293D476X0025D2TE3 293d.pdf
293D476X0025D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case: D
Case - inch: 2917
auf Bestellung 2802 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
114+0.63 EUR
122+0.59 EUR
125+0.57 EUR
200+0.55 EUR
500+0.54 EUR
1000+0.52 EUR
2500+0.51 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
293D476X9025D2TE3 293d.pdf
293D476X9025D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 25V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case: D
Case - inch: 2917
auf Bestellung 2022 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
152+0.47 EUR
179+0.4 EUR
187+0.38 EUR
500+0.36 EUR
1000+0.35 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
VJ1206Y104KXACW1BC vjw1bcbascomseries.pdf
VJ1206Y104KXACW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Kind of capacitor: MLCC
auf Bestellung 7452 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
2500+0.029 EUR
2907+0.025 EUR
3165+0.023 EUR
3312+0.022 EUR
4000+0.02 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
SM6T6V8A-E3/52 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA290988BB91420C7&compId=sm6t.pdf?ci_sign=6a01ce312076e467c6748a036c14f9e36ba96088
SM6T6V8A-E3/52
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
auf Bestellung 3315 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
491+0.15 EUR
506+0.14 EUR
562+0.13 EUR
596+0.12 EUR
633+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE6.8A-E3/54 15ke_Ser.pdf
1.5KE6.8A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
auf Bestellung 515 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
97+0.74 EUR
137+0.52 EUR
500+0.39 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
1N4148-TAP 1N4148-TAP.pdf
1N4148-TAP
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 8ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Kind of package: Ammo Pack
Max. forward impulse current: 2A
Case: DO35
Reverse recovery time: 8ns
Max. load current: 0.5A
auf Bestellung 34772 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
1220+0.059 EUR
1701+0.042 EUR
1946+0.037 EUR
2565+0.028 EUR
2841+0.025 EUR
3125+0.023 EUR
10000+0.019 EUR
20000+0.018 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
SIHA20N50E-GE3 siha20n50e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHB20N50E-GE3 sihb20n50e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHG20N50E-GE3 sihg20n50e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SiHH20N50E-T1-GE3 sihh20n50e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHP20N50E-GE3 sihp20n50e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BPW34 BPW34-V.pdf
BPW34
Hersteller: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Active area: 7.5mm2
Dimensions: 5.4x4.3x3.2mm
Viewing angle: 65°
Radiant power: 215mW
auf Bestellung 2781 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
115+0.62 EUR
126+0.57 EUR
136+0.53 EUR
145+0.49 EUR
500+0.42 EUR
1000+0.39 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
BPW34S description BPW34-V.pdf
BPW34S
Hersteller: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; DIL; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Case: DIL
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Viewing angle: 65°
Active area: 7.5mm2
Dimensions: 5.4x4.3x3.2mm
Radiant power: 215mW
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
VBPW34FAS VBPW34FAS-DTE.pdf
VBPW34FAS
Hersteller: VISHAY
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 780...1050nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
LED lens: black
auf Bestellung 2077 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
86+0.83 EUR
105+0.68 EUR
116+0.62 EUR
1000+0.45 EUR
2000+0.41 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
VBPW34S VBPW34S-DTE.pdf
VBPW34S
Hersteller: VISHAY
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 430...1100nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MAL213661101E3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8FD02614C950E0C4&compId=136RVI.PDF?ci_sign=f3f08a0a3667306c830919d1612f7d55110c1a61
MAL213661101E3
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 100uF; 50VDC; Ø10x12mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 100µF
Operating voltage: 50V DC
Body dimensions: Ø10x12mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 4000h
Operating temperature: -55...105°C
Height: 12mm
Diameter: 10mm
auf Bestellung 1377 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
68+1.06 EUR
87+0.82 EUR
100+0.72 EUR
200+0.62 EUR
250+0.59 EUR
500+0.58 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRF9630PBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A45B068556469&compId=IRF9630PBF.pdf?ci_sign=e2cb1b3308e421be576b913d5f89ef44f64440d7
IRF9630PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: -26A
auf Bestellung 399 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
46+1.59 EUR
54+1.34 EUR
100+1.22 EUR
250+1.04 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
IRF9630SPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BD90AABD95160143&compId=IRF9630S.pdf?ci_sign=b0102a62d4142948f664c7b9568ff7dcac603c74
IRF9630SPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: -26A
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
46+1.59 EUR
51+1.42 EUR
100+1.32 EUR
250+1.2 EUR
Mindestbestellmenge: 42
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IRFI9630GPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8AC132D3002469&compId=IRFI9630GPBF.pdf?ci_sign=fb760884a4196e9c1bd01f7ae8a92d2afdcb62ea
IRFI9630GPBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.7A; 35W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 341 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.29 EUR
44+1.63 EUR
52+1.39 EUR
100+1.3 EUR
250+1.19 EUR
Mindestbestellmenge: 32
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SIHJ7N65E-T1-GE3 sihj7n65e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 17A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CRCW12060000Z0TABC pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7
CRCW12060000Z0TABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 0Ω; 0.25W; ±5%; 200V; -55÷155°C
Tolerance: ±5%
Resistance: 0Ω
Operating temperature: -55...155°C
Power: 0.25W
Mounting: SMD
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
auf Bestellung 102799 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1480+0.049 EUR
2680+0.027 EUR
10920+0.0065 EUR
13780+0.0052 EUR
19240+0.0037 EUR
20170+0.0035 EUR
50000+0.0034 EUR
100000+0.0033 EUR
Mindestbestellmenge: 1480
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BAV70-E3-08 bav70.pdf
BAV70-E3-08
+1
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
auf Bestellung 10273 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
770+0.093 EUR
1053+0.068 EUR
1211+0.059 EUR
1363+0.052 EUR
1548+0.046 EUR
3000+0.037 EUR
6000+0.031 EUR
9000+0.027 EUR
Mindestbestellmenge: 556
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BAV70-G3-08 bav70g.pdf
BAV70-G3-08
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DF06M-E3/45 pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F721CC5719E469&compId=DF02-E3-45.pdf?ci_sign=0c4b3f237372eb7e50c4f454c16431cdf84a38a6
DF06M-E3/45
Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 659 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
158+0.45 EUR
187+0.38 EUR
210+0.34 EUR
233+0.31 EUR
264+0.27 EUR
500+0.25 EUR
Mindestbestellmenge: 64
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DF06S-E3/45 description dfs.pdf
DF06S-E3/45
Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.6kV
Load current: 1A
Case: DFS
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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