Foto | Bezeichnung | Hersteller | Beschreibung |
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MAL219367121E3 | VISHAY |
![]() Description: Capacitor: electrolytic; SNAP-IN; 120uF; 450VDC; Ø25x30mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 120µF Operating voltage: 450V DC Body dimensions: Ø25x30mm Terminal pitch: 10mm Tolerance: ±20% Service life: 5000h Operating temperature: -40...105°C |
Produkt ist nicht verfügbar |
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VJ0402V104ZXJCW2BC | VISHAY |
![]() Description: Capacitor: ceramic; MLCC; 100nF; 16V; Y5V; -20÷80%; SMD; 0402 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.1µF Operating voltage: 16V Dielectric: Y5V Tolerance: -20...80% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -25...85°C |
auf Bestellung 7707 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7852DP-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerPAK® SO8 Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Gate charge: 41nC On-state resistance: 16.5mΩ Power dissipation: 1.2W Drain current: 7.6A Gate-source voltage: ±20V Pulsed drain current: 50A Drain-source voltage: 80V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TSOP39438 | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: THT Supply voltage: 2.5...5.5V Viewing angle: 45° |
auf Bestellung 1081 Stücke: Lieferzeit 14-21 Tag (e) |
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TSOP4138 | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: THT Supply voltage: 2.5...5.5V Viewing angle: 45° Connector variant: straight |
auf Bestellung 158 Stücke: Lieferzeit 14-21 Tag (e) |
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TSOP4438 | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: THT Supply voltage: 2.5...5.5V Viewing angle: 45° |
auf Bestellung 408 Stücke: Lieferzeit 14-21 Tag (e) |
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TSOP58338 | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: THT Supply voltage: 2.5...5.5V Viewing angle: 45° |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TSOP6138TT | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: SMD Supply voltage: 2.5...5.5V Viewing angle: 100° Connector variant: angled |
auf Bestellung 556 Stücke: Lieferzeit 14-21 Tag (e) |
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TSOP6238TT | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: SMD Supply voltage: 2.5...5.5V Viewing angle: 100° Connector variant: angled |
auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) |
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PA16NP472MAB15 | VISHAY |
![]() Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 500mW; linear; 16mm Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 4.7kΩ Tolerance: ±20% Power: 0.5W Characteristics: linear Shaft diameter: 16mm Leads: solder lugs Track material: plastic Mechanical rotation angle: 300° Electrical rotation angle: 270° Operating temperature: -40...85°C IP rating: IP67 Mechanical durability: 50000 cycles Temperature coefficient: 500ppm/°C Body material: plastic |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PE30L0FL472KAB | VISHAY |
![]() Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear Resistance: 4.7kΩ Power: 3W Tolerance: ±10% Max. operating voltage: 300V Temperature coefficient: 150ppm/°C IP rating: IP67 Characteristics: linear Type of potentiometer: shaft Kind of potentiometer: single turn Mounting: on panel Operating temperature: -55...125°C Shaft diameter: 6mm Thread length: 12mm Shaft length: 25mm Electrical rotation angle: 270 ±10° Mechanical rotation angle: 300 ±5° Min. insulation resistance: 1TΩ Leads: for soldering Track material: cermet Shaft surface: smooth Potentiometer features: for industrial use; for military use |
auf Bestellung 165 Stücke: Lieferzeit 14-21 Tag (e) |
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TS53YJ102MR10 | VISHAY |
![]() Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear Resistance: 1kΩ Power: 0.25W Tolerance: ±20% Body dimensions: 5x5x2.7mm Operating temperature: -55...155°C Leads: YJ Track material: cermet Kind of potentiometer: single turn IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Mounting: SMD Torque: 1,5Ncm Temperature coefficient: 100ppm/°C Max. operating voltage: 200V Electrical rotation angle: 220 ±15° Mechanical rotation angle: 270 ±10° |
auf Bestellung 628 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF644STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF644STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BFC233820333 | VISHAY |
![]() Description: Capacitor: polypropylene; 33nF; 630VDC; 310VAC; THT; ±20%; 7.5mm Type of capacitor: polypropylene Capacitance: 33nF Tolerance: ±20% Mounting: THT Terminal pitch: 7.5mm Body dimensions: 10x5x10.5mm Operating voltage: 310V AC; 630V DC |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2301CDS-T1-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -10A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 142mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MRS25000C2324FCT00 | VISHAY |
![]() Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; Ø0.6x28mm; Ø2.5x6.5mm Mounting: THT Type of resistor: thin film Leads dimensions: Ø0.6x28mm Body dimensions: Ø2.5x6.5mm Power: 0.6W Tolerance: ±1% Temperature coefficient: 50ppm/°C Max. operating voltage: 350V Resistance: 2.32MΩ |
auf Bestellung 9441 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0805A561KXCAT | VISHAY |
![]() Description: Capacitor: ceramic; 560pF; 200V; C0G (NP0); ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 560pF Operating voltage: 200V Dielectric: C0G (NP0) Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL530PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Pulsed drain current: 60A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.22Ω Mounting: THT Gate charge: 28nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 91 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL530STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Pulsed drain current: 60A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.22Ω Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF9540STRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Pulsed drain current: -72A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of channel: enhancement Gate charge: 61nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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1.5KE130CA-E3/54 | VISHAY |
![]() Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 111V Breakdown voltage: 130.5V Max. forward impulse current: 8.4A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: 13 inch reel Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated |
auf Bestellung 1545 Stücke: Lieferzeit 14-21 Tag (e) |
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593D107X9016D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±10%; 125mΩ Manufacturer series: Tantamount ESR value: 125mΩ Kind of capacitor: low ESR Case - mm: 7343 Operating temperature: -55...125°C Case - inch: 2917 Case: D Tolerance: ±10% Type of capacitor: tantalum Capacitance: 100µF Operating voltage: 16V DC Mounting: SMD |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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GRC00JE6821A00L | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 6800uF; 10VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Operating temperature: -40...105°C Capacitance: 6.8mF Dimensions: 16x20mm Operating voltage: 10V DC Tolerance: ±20% Service life: 2000h |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR9024TRLPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -35A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFR1N60ATRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 5.6A Gate charge: 14nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFR1N60ATRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 5.6A Gate charge: 14nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFU1N60APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Power dissipation: 36W Case: IPAK; TO251 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 5.6A Gate charge: 14nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SIHFR1N60A-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Mounting: SMD Case: DPAK; TO252 Kind of package: tube On-state resistance: 7Ω Polarisation: unipolar Drain-source voltage: 600V Pulsed drain current: 5.6A Drain current: 0.89A Gate charge: 14nC Power dissipation: 36W Gate-source voltage: ±30V Kind of channel: enhancement Type of transistor: N-MOSFET |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHFR1N60ATRL-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 5.6A Gate charge: 14nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SI7850ADP-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A Mounting: SMD Case: PowerPAK® SO8 Polarisation: unipolar Gate charge: 17nC On-state resistance: 25mΩ Power dissipation: 35.7W Type of transistor: N-MOSFET Drain current: 12A Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 60V Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SI7850DP-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A Mounting: SMD Case: PowerPAK® SO8 Polarisation: unipolar Gate charge: 27nC On-state resistance: 22mΩ Power dissipation: 0.9W Type of transistor: N-MOSFET Drain current: 6.2A Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 60V Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRFI740GLCPBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.7A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 23A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRLR014PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Power dissipation: 25W Case: DPAK; TO252 Mounting: SMD Kind of package: tube Kind of channel: enhancement Pulsed drain current: 31A On-state resistance: 0.28Ω Gate charge: 8.4nC Gate-source voltage: ±10V |
auf Bestellung 111 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR014TRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Power dissipation: 25W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 31A On-state resistance: 0.28Ω Gate charge: 8.4nC Gate-source voltage: ±10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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VJ1206A102JXACW1BC | VISHAY |
![]() Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206 Operating temperature: -55...125°C Dielectric: C0G (NP0) Type of capacitor: ceramic Kind of capacitor: MLCC Mounting: SMD Capacitance: 1nF Tolerance: ±5% Operating voltage: 50V Case - inch: 1206 Case - mm: 3216 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0805620KJNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C Case - mm: 2012 Mounting: SMD Type of resistor: thick film Operating temperature: -55...155°C Power: 0.125W Tolerance: ±5% Max. operating voltage: 150V Resistance: 620kΩ Case - inch: 0805 |
auf Bestellung 3500 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0805620RFKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C Case - mm: 2012 Mounting: SMD Type of resistor: thick film Operating temperature: -55...155°C Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Resistance: 620Ω Case - inch: 0805 |
auf Bestellung 8099 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9610SPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1A Pulsed drain current: -7A Power dissipation: 20W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 11nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF9610STRRPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1A Pulsed drain current: -7A Power dissipation: 20W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF9630STRLPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -4A Pulsed drain current: -26A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF9640LPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W Kind of package: tube Case: I2PAK; TO262 Kind of channel: enhancement Mounting: THT Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Pulsed drain current: -44A Drain current: -6.8A Gate charge: 44nC On-state resistance: 0.5Ω Gate-source voltage: ±20V Power dissipation: 125W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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M43P203KB40 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear Resistance: 20kΩ Power: 0.75W Tolerance: ±10% IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Kind of potentiometer: multiturn Mounting: THT Operating temperature: -55...125°C Body dimensions: 19x6.4x4.8mm Terminal pitch: 12.7x2.54mm Potentiometer standard: 19mm Number of electrical turns: 15 Min. insulation resistance: 1GΩ Track material: cermet |
auf Bestellung 234 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9Z24STRLPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.7A Pulsed drain current: -44A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhancement Gate charge: 19nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BZX85C20-TAP | VISHAY |
![]() Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 20V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 19910 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C68-TAP | VISHAY |
![]() Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 68V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 20380 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0402G104KXQCW1BC | VISHAY |
![]() Description: Capacitor: ceramic; MLCC; 100nF; 10V; X5R; ±10%; SMD; 0402 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.1µF Operating voltage: 10V Dielectric: X5R Tolerance: ±10% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...85°C |
auf Bestellung 10053 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP350LCPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 64A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MCT06030C1008FP500 | VISHAY |
![]() Description: Resistor: thin film; SMD; 0603; 1Ω; 0.1W; ±1%; MCT0603; 0; 50ppm/°C Type of resistor: thin film Mounting: SMD Resistance: 1Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...125°C; -55...155°C Temperature coefficient: 50ppm/°C Roll diameter max.: 180mm Case - inch: 0603 Manufacturer series: MCT0603 Version: 0 Case - mm: 1608 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRF630STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Mounting: SMD Gate charge: 43nC On-state resistance: 0.4Ω Kind of channel: enhancement Drain current: 5.7A Gate-source voltage: ±20V Pulsed drain current: 36A Power dissipation: 74W Drain-source voltage: 200V Case: D2PAK; TO263 Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF630STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Mounting: SMD Gate charge: 43nC On-state resistance: 0.4Ω Kind of channel: enhancement Drain current: 5.7A Gate-source voltage: ±20V Pulsed drain current: 36A Power dissipation: 74W Drain-source voltage: 200V Case: D2PAK; TO263 Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF720SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.1A Pulsed drain current: 13A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: SMD Kind of channel: enhancement Gate charge: 20nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NTCS0805E3334JHT | VISHAY |
![]() Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C Case - inch: 0805 Resistance: 0.33MΩ Power: 0.21W Tolerance: ±5% Operating temperature: -40...150°C Material constant B: 3930K Type of sensor: NTC thermistor Mounting: SMD |
auf Bestellung 1418 Stücke: Lieferzeit 14-21 Tag (e) |
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NTCS0805E3474FXT | VISHAY |
![]() Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C Type of sensor: NTC thermistor Resistance: 470kΩ Operating temperature: -40...150°C Power: 0.21W Tolerance: ±1% Mounting: SMD Material constant B: 4025K Case - inch: 0805 |
auf Bestellung 1657 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR024PBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRLR024TRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRLR024TRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MAL215097601E3 | VISHAY |
![]() Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; 10x10x10mm; ±20% Type of capacitor: electrolytic Mounting: SMD Operating temperature: -55...105°C Capacitance: 330µF Operating voltage: 25V DC Body dimensions: 10x10x10mm Tolerance: ±20% |
auf Bestellung 868 Stücke: Lieferzeit 14-21 Tag (e) |
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P6KE39A-E3/73 | VISHAY |
![]() Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; DO15; 7 inch reel Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 11.1A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: 7 inch reel Technology: TransZorb® Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
auf Bestellung 2257 Stücke: Lieferzeit 14-21 Tag (e) |
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PR02000201009JN300 | VISHAY |
![]() Description: Resistor: power metal; THT; 10Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C Mounting: THT Body dimensions: Ø3.9x12mm Power: 2W Tolerance: ±5% Resistance: 10Ω Temperature coefficient: 250ppm/°C Max. operating voltage: 500V Leads: axial Resistor features: high power and small dimension Type of resistor: power metal |
auf Bestellung 2290 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL219367121E3 |
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Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 120uF; 450VDC; Ø25x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 120µF
Operating voltage: 450V DC
Body dimensions: Ø25x30mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...105°C
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 120uF; 450VDC; Ø25x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 120µF
Operating voltage: 450V DC
Body dimensions: Ø25x30mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...105°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VJ0402V104ZXJCW2BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 16V; Y5V; -20÷80%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: Y5V
Tolerance: -20...80%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -25...85°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 16V; Y5V; -20÷80%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: Y5V
Tolerance: -20...80%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -25...85°C
auf Bestellung 7707 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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4700+ | 0.015 EUR |
SI7852DP-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 16.5mΩ
Power dissipation: 1.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 16.5mΩ
Power dissipation: 1.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSOP39438 |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
auf Bestellung 1081 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
80+ | 0.9 EUR |
85+ | 0.85 EUR |
99+ | 0.72 EUR |
105+ | 0.68 EUR |
500+ | 0.66 EUR |
TSOP4138 |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Connector variant: straight
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Connector variant: straight
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
64+ | 1.13 EUR |
99+ | 0.73 EUR |
146+ | 0.49 EUR |
154+ | 0.46 EUR |
TSOP4438 |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
auf Bestellung 408 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
58+ | 1.24 EUR |
89+ | 0.81 EUR |
103+ | 0.7 EUR |
109+ | 0.66 EUR |
113+ | 0.63 EUR |
TSOP58338 |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSOP6138TT |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
auf Bestellung 556 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
56+ | 1.29 EUR |
60+ | 1.21 EUR |
65+ | 1.1 EUR |
109+ | 0.66 EUR |
115+ | 0.62 EUR |
TSOP6238TT |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
77+ | 0.93 EUR |
103+ | 0.7 EUR |
109+ | 0.66 EUR |
PA16NP472MAB15 |
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Hersteller: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 500mW; linear; 16mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±20%
Power: 0.5W
Characteristics: linear
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 500mW; linear; 16mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±20%
Power: 0.5W
Characteristics: linear
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PE30L0FL472KAB |
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Hersteller: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Power: 3W
Tolerance: ±10%
Max. operating voltage: 300V
Temperature coefficient: 150ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Mounting: on panel
Operating temperature: -55...125°C
Shaft diameter: 6mm
Thread length: 12mm
Shaft length: 25mm
Electrical rotation angle: 270 ±10°
Mechanical rotation angle: 300 ±5°
Min. insulation resistance: 1TΩ
Leads: for soldering
Track material: cermet
Shaft surface: smooth
Potentiometer features: for industrial use; for military use
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Power: 3W
Tolerance: ±10%
Max. operating voltage: 300V
Temperature coefficient: 150ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Mounting: on panel
Operating temperature: -55...125°C
Shaft diameter: 6mm
Thread length: 12mm
Shaft length: 25mm
Electrical rotation angle: 270 ±10°
Mechanical rotation angle: 300 ±5°
Min. insulation resistance: 1TΩ
Leads: for soldering
Track material: cermet
Shaft surface: smooth
Potentiometer features: for industrial use; for military use
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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3+ | 23.98 EUR |
TS53YJ102MR10 |
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Hersteller: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Leads: YJ
Track material: cermet
Kind of potentiometer: single turn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1,5Ncm
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Leads: YJ
Track material: cermet
Kind of potentiometer: single turn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1,5Ncm
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
auf Bestellung 628 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.8 EUR |
43+ | 1.67 EUR |
46+ | 1.59 EUR |
IRF644STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF644STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BFC233820333 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 33nF; 630VDC; 310VAC; THT; ±20%; 7.5mm
Type of capacitor: polypropylene
Capacitance: 33nF
Tolerance: ±20%
Mounting: THT
Terminal pitch: 7.5mm
Body dimensions: 10x5x10.5mm
Operating voltage: 310V AC; 630V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 33nF; 630VDC; 310VAC; THT; ±20%; 7.5mm
Type of capacitor: polypropylene
Capacitance: 33nF
Tolerance: ±20%
Mounting: THT
Terminal pitch: 7.5mm
Body dimensions: 10x5x10.5mm
Operating voltage: 310V AC; 630V DC
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
75+ | 0.95 EUR |
125+ | 0.58 EUR |
132+ | 0.54 EUR |
SI2301CDS-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MRS25000C2324FCT00 |
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Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; Ø0.6x28mm; Ø2.5x6.5mm
Mounting: THT
Type of resistor: thin film
Leads dimensions: Ø0.6x28mm
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Resistance: 2.32MΩ
Category: THT Resistors
Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; Ø0.6x28mm; Ø2.5x6.5mm
Mounting: THT
Type of resistor: thin film
Leads dimensions: Ø0.6x28mm
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Resistance: 2.32MΩ
auf Bestellung 9441 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
240+ | 0.3 EUR |
570+ | 0.13 EUR |
1220+ | 0.059 EUR |
1280+ | 0.056 EUR |
VJ0805A561KXCAT |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 560pF; 200V; C0G (NP0); ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 560pF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 560pF; 200V; C0G (NP0); ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 560pF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
220+ | 0.33 EUR |
560+ | 0.13 EUR |
1200+ | 0.06 EUR |
1250+ | 0.057 EUR |
IRL530PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.59 EUR |
59+ | 1.21 EUR |
91+ | 0.79 EUR |
IRL530STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF9540STRRPBF |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1.5KE130CA-E3/54 |
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Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1545 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
96+ | 0.75 EUR |
202+ | 0.35 EUR |
214+ | 0.33 EUR |
593D107X9016D2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±10%; 125mΩ
Manufacturer series: Tantamount
ESR value: 125mΩ
Kind of capacitor: low ESR
Case - mm: 7343
Operating temperature: -55...125°C
Case - inch: 2917
Case: D
Tolerance: ±10%
Type of capacitor: tantalum
Capacitance: 100µF
Operating voltage: 16V DC
Mounting: SMD
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±10%; 125mΩ
Manufacturer series: Tantamount
ESR value: 125mΩ
Kind of capacitor: low ESR
Case - mm: 7343
Operating temperature: -55...125°C
Case - inch: 2917
Case: D
Tolerance: ±10%
Type of capacitor: tantalum
Capacitance: 100µF
Operating voltage: 16V DC
Mounting: SMD
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.1 EUR |
87+ | 0.82 EUR |
143+ | 0.5 EUR |
152+ | 0.47 EUR |
GRC00JE6821A00L |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 6800uF; 10VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Operating temperature: -40...105°C
Capacitance: 6.8mF
Dimensions: 16x20mm
Operating voltage: 10V DC
Tolerance: ±20%
Service life: 2000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 6800uF; 10VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Operating temperature: -40...105°C
Capacitance: 6.8mF
Dimensions: 16x20mm
Operating voltage: 10V DC
Tolerance: ±20%
Service life: 2000h
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
64+ | 1.13 EUR |
75+ | 0.96 EUR |
IRFR9024TRLPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR1N60ATRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR1N60ATRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFU1N60APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHFR1N60A-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Mounting: SMD
Case: DPAK; TO252
Kind of package: tube
On-state resistance: 7Ω
Polarisation: unipolar
Drain-source voltage: 600V
Pulsed drain current: 5.6A
Drain current: 0.89A
Gate charge: 14nC
Power dissipation: 36W
Gate-source voltage: ±30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Mounting: SMD
Case: DPAK; TO252
Kind of package: tube
On-state resistance: 7Ω
Polarisation: unipolar
Drain-source voltage: 600V
Pulsed drain current: 5.6A
Drain current: 0.89A
Gate charge: 14nC
Power dissipation: 36W
Gate-source voltage: ±30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
79+ | 0.9 EUR |
SIHFR1N60ATRL-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SI7850ADP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A
Mounting: SMD
Case: PowerPAK® SO8
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 25mΩ
Power dissipation: 35.7W
Type of transistor: N-MOSFET
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A
Mounting: SMD
Case: PowerPAK® SO8
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 25mΩ
Power dissipation: 35.7W
Type of transistor: N-MOSFET
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SI7850DP-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A
Mounting: SMD
Case: PowerPAK® SO8
Polarisation: unipolar
Gate charge: 27nC
On-state resistance: 22mΩ
Power dissipation: 0.9W
Type of transistor: N-MOSFET
Drain current: 6.2A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A
Mounting: SMD
Case: PowerPAK® SO8
Polarisation: unipolar
Gate charge: 27nC
On-state resistance: 22mΩ
Power dissipation: 0.9W
Type of transistor: N-MOSFET
Drain current: 6.2A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFI740GLCPBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 23A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 23A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLR014PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.28Ω
Gate charge: 8.4nC
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.28Ω
Gate charge: 8.4nC
Gate-source voltage: ±10V
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
72+ | 1 EUR |
106+ | 0.68 EUR |
111+ | 0.64 EUR |
IRLR014TRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.28Ω
Gate charge: 8.4nC
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.28Ω
Gate charge: 8.4nC
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VJ1206A102JXACW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Kind of capacitor: MLCC
Mounting: SMD
Capacitance: 1nF
Tolerance: ±5%
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Kind of capacitor: MLCC
Mounting: SMD
Capacitance: 1nF
Tolerance: ±5%
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
2128+ | 0.034 EUR |
2253+ | 0.032 EUR |
CRCW0805620KJNTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C
Case - mm: 2012
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Resistance: 620kΩ
Case - inch: 0805
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C
Case - mm: 2012
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Resistance: 620kΩ
Case - inch: 0805
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2300+ | 0.032 EUR |
3500+ | 0.02 EUR |
CRCW0805620RFKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C
Case - mm: 2012
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Resistance: 620Ω
Case - inch: 0805
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C
Case - mm: 2012
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Resistance: 620Ω
Case - inch: 0805
auf Bestellung 8099 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2200+ | 0.034 EUR |
4000+ | 0.018 EUR |
6500+ | 0.011 EUR |
IRF9610SPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF9610STRRPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF9630STRLPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Pulsed drain current: -26A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Pulsed drain current: -26A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF9640LPBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Kind of package: tube
Case: I2PAK; TO262
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Pulsed drain current: -44A
Drain current: -6.8A
Gate charge: 44nC
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Power dissipation: 125W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Kind of package: tube
Case: I2PAK; TO262
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Pulsed drain current: -44A
Drain current: -6.8A
Gate charge: 44nC
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Power dissipation: 125W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
M43P203KB40 |
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Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 19x6.4x4.8mm
Terminal pitch: 12.7x2.54mm
Potentiometer standard: 19mm
Number of electrical turns: 15
Min. insulation resistance: 1GΩ
Track material: cermet
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 19x6.4x4.8mm
Terminal pitch: 12.7x2.54mm
Potentiometer standard: 19mm
Number of electrical turns: 15
Min. insulation resistance: 1GΩ
Track material: cermet
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.53 EUR |
25+ | 2.95 EUR |
26+ | 2.79 EUR |
IRF9Z24STRLPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX85C20-TAP |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 19910 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
336+ | 0.21 EUR |
467+ | 0.15 EUR |
547+ | 0.13 EUR |
1238+ | 0.058 EUR |
1309+ | 0.055 EUR |
10000+ | 0.053 EUR |
BZX85C68-TAP |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 20380 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
490+ | 0.15 EUR |
980+ | 0.073 EUR |
1100+ | 0.065 EUR |
1230+ | 0.058 EUR |
1300+ | 0.055 EUR |
5000+ | 0.053 EUR |
VJ0402G104KXQCW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 10V; X5R; ±10%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 10V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...85°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 10V; X5R; ±10%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 10V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...85°C
auf Bestellung 10053 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5051+ | 0.014 EUR |
8929+ | 0.008 EUR |
10053+ | 0.0072 EUR |
IRFP350LCPBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCT06030C1008FP500 |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1Ω; 0.1W; ±1%; MCT0603; 0; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Resistance: 1Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...125°C; -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Case - inch: 0603
Manufacturer series: MCT0603
Version: 0
Case - mm: 1608
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1Ω; 0.1W; ±1%; MCT0603; 0; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Resistance: 1Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...125°C; -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Case - inch: 0603
Manufacturer series: MCT0603
Version: 0
Case - mm: 1608
Produkt ist nicht verfügbar
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Stück im Wert von UAH
IRF630STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Mounting: SMD
Gate charge: 43nC
On-state resistance: 0.4Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±20V
Pulsed drain current: 36A
Power dissipation: 74W
Drain-source voltage: 200V
Case: D2PAK; TO263
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Mounting: SMD
Gate charge: 43nC
On-state resistance: 0.4Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±20V
Pulsed drain current: 36A
Power dissipation: 74W
Drain-source voltage: 200V
Case: D2PAK; TO263
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF630STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Mounting: SMD
Gate charge: 43nC
On-state resistance: 0.4Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±20V
Pulsed drain current: 36A
Power dissipation: 74W
Drain-source voltage: 200V
Case: D2PAK; TO263
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Mounting: SMD
Gate charge: 43nC
On-state resistance: 0.4Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±20V
Pulsed drain current: 36A
Power dissipation: 74W
Drain-source voltage: 200V
Case: D2PAK; TO263
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF720SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.1A
Pulsed drain current: 13A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 20nC
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.1A
Pulsed drain current: 13A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 20nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTCS0805E3334JHT |
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Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C
Case - inch: 0805
Resistance: 0.33MΩ
Power: 0.21W
Tolerance: ±5%
Operating temperature: -40...150°C
Material constant B: 3930K
Type of sensor: NTC thermistor
Mounting: SMD
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C
Case - inch: 0805
Resistance: 0.33MΩ
Power: 0.21W
Tolerance: ±5%
Operating temperature: -40...150°C
Material constant B: 3930K
Type of sensor: NTC thermistor
Mounting: SMD
auf Bestellung 1418 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
313+ | 0.23 EUR |
343+ | 0.21 EUR |
353+ | 0.2 EUR |
NTCS0805E3474FXT |
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Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 470kΩ
Operating temperature: -40...150°C
Power: 0.21W
Tolerance: ±1%
Mounting: SMD
Material constant B: 4025K
Case - inch: 0805
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 470kΩ
Operating temperature: -40...150°C
Power: 0.21W
Tolerance: ±1%
Mounting: SMD
Material constant B: 4025K
Case - inch: 0805
auf Bestellung 1657 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
109+ | 0.66 EUR |
133+ | 0.54 EUR |
168+ | 0.43 EUR |
177+ | 0.4 EUR |
1000+ | 0.39 EUR |
IRLR024PBF | ![]() |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLR024TRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLR024TRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MAL215097601E3 |
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Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; 10x10x10mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Operating temperature: -55...105°C
Capacitance: 330µF
Operating voltage: 25V DC
Body dimensions: 10x10x10mm
Tolerance: ±20%
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; 10x10x10mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Operating temperature: -55...105°C
Capacitance: 330µF
Operating voltage: 25V DC
Body dimensions: 10x10x10mm
Tolerance: ±20%
auf Bestellung 868 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.6 EUR |
45+ | 1.62 EUR |
75+ | 0.96 EUR |
80+ | 0.9 EUR |
P6KE39A-E3/73 |
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Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; DO15; 7 inch reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: 7 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; DO15; 7 inch reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: 7 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
auf Bestellung 2257 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
244+ | 0.29 EUR |
410+ | 0.17 EUR |
435+ | 0.16 EUR |
PR02000201009JN300 |
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Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 10Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Mounting: THT
Body dimensions: Ø3.9x12mm
Power: 2W
Tolerance: ±5%
Resistance: 10Ω
Temperature coefficient: 250ppm/°C
Max. operating voltage: 500V
Leads: axial
Resistor features: high power and small dimension
Type of resistor: power metal
Category: THT Resistors
Description: Resistor: power metal; THT; 10Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Mounting: THT
Body dimensions: Ø3.9x12mm
Power: 2W
Tolerance: ±5%
Resistance: 10Ω
Temperature coefficient: 250ppm/°C
Max. operating voltage: 500V
Leads: axial
Resistor features: high power and small dimension
Type of resistor: power metal
auf Bestellung 2290 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
300+ | 0.24 EUR |
500+ | 0.14 EUR |
550+ | 0.13 EUR |