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MAL219367121E3 VISHAY 193pursi.pdf Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 120uF; 450VDC; Ø25x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 120µF
Operating voltage: 450V DC
Body dimensions: Ø25x30mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...105°C
Produkt ist nicht verfügbar
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VJ0402V104ZXJCW2BC VJ0402V104ZXJCW2BC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA117AB85A2749&compId=00306xVJW2BC.pdf?ci_sign=c67bf94761514bccf5d7f4b66019d360585e001c Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 16V; Y5V; -20÷80%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: Y5V
Tolerance: -20...80%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -25...85°C
auf Bestellung 7707 Stücke:
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4700+0.015 EUR
Mindestbestellmenge: 4700
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SI7852DP-T1-E3 VISHAY si7852dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 16.5mΩ
Power dissipation: 1.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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TSOP39438 TSOP39438 VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8ACD2A742E9FF6143&compId=TSOP39436.pdf?ci_sign=f10660b5f5c855bf068fb07726f92f5fb97afd4b Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
auf Bestellung 1081 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
80+0.9 EUR
85+0.85 EUR
99+0.72 EUR
105+0.68 EUR
500+0.66 EUR
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TSOP4138 TSOP4138 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0BAF96C32129E27&compId=TSOP4138.pdf?ci_sign=7a03254831903f582a949bd5698a48bc95345eff Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Connector variant: straight
auf Bestellung 158 Stücke:
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64+1.13 EUR
99+0.73 EUR
146+0.49 EUR
154+0.46 EUR
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TSOP4438 TSOP4438 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED884C9820DC80A0A18&compId=TSOP4438.pdf?ci_sign=3322f3cf8b1903174897ca0f14bf4f2d6a424066 Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
auf Bestellung 408 Stücke:
Lieferzeit 14-21 Tag (e)
58+1.24 EUR
89+0.81 EUR
103+0.7 EUR
109+0.66 EUR
113+0.63 EUR
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TSOP58338 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED884C97E5F41D76A18&compId=TSOP58336.pdf?ci_sign=b4aecd88e119e00a0500410e8be1df59d3ed764b Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Produkt ist nicht verfügbar
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TSOP6138TT TSOP6138TT VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0BB45F82B073E27&compId=TSOP6138TT.pdf?ci_sign=444e2347833381a899e8ee26ad28b87b0e86f6bf Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
auf Bestellung 556 Stücke:
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56+1.29 EUR
60+1.21 EUR
65+1.1 EUR
109+0.66 EUR
115+0.62 EUR
Mindestbestellmenge: 56
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TSOP6238TT TSOP6238TT VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0BB490C0DEB1E27&compId=TSOP6238TT.pdf?ci_sign=b8dc249dbf5b67662b4df96ca20dcd25d047e783 Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
77+0.93 EUR
103+0.7 EUR
109+0.66 EUR
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PA16NP472MAB15 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBD9116D482AE80D5&compId=p16-series.pdf?ci_sign=8b114df350ec09dcb670f4c9ff70a4c3e5d03566 Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 500mW; linear; 16mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±20%
Power: 0.5W
Characteristics: linear
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
Produkt ist nicht verfügbar
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PE30L0FL472KAB PE30L0FL472KAB VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE787BA75F12C106745&compId=pe30.pdf?ci_sign=c10cd9b96366e63c778e9fc60e39b673aa8e84a7 Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Power: 3W
Tolerance: ±10%
Max. operating voltage: 300V
Temperature coefficient: 150ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Mounting: on panel
Operating temperature: -55...125°C
Shaft diameter: 6mm
Thread length: 12mm
Shaft length: 25mm
Electrical rotation angle: 270 ±10°
Mechanical rotation angle: 300 ±5°
Min. insulation resistance: 1TΩ
Leads: for soldering
Track material: cermet
Shaft surface: smooth
Potentiometer features: for industrial use; for military use
auf Bestellung 165 Stücke:
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3+23.98 EUR
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TS53YJ102MR10 TS53YJ102MR10 VISHAY pVersion=0046&contRep=ZT&docId=E1C05AB5921022F1A6F5005056AB5A8F&compId=ts53yj.pdf?ci_sign=472ba78208969c07d575b9ea951ef69c484074bb Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Leads: YJ
Track material: cermet
Kind of potentiometer: single turn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1,5Ncm
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
auf Bestellung 628 Stücke:
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19+3.8 EUR
43+1.67 EUR
46+1.59 EUR
Mindestbestellmenge: 19
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IRF644STRLPBF VISHAY sihf644s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF644STRRPBF VISHAY sihf644s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
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BFC233820333 BFC233820333 VISHAY mkp3382x2.pdf Category: THT Film Capacitors
Description: Capacitor: polypropylene; 33nF; 630VDC; 310VAC; THT; ±20%; 7.5mm
Type of capacitor: polypropylene
Capacitance: 33nF
Tolerance: ±20%
Mounting: THT
Terminal pitch: 7.5mm
Body dimensions: 10x5x10.5mm
Operating voltage: 310V AC; 630V DC
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
75+0.95 EUR
125+0.58 EUR
132+0.54 EUR
Mindestbestellmenge: 38
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SI2301CDS-T1-E3 VISHAY si2301cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
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MRS25000C2324FCT00 MRS25000C2324FCT00 VISHAY pVersion=0046&contRep=ZT&docId=005056AB90B41EDA9EAE4FD04845C0C4&compId=MRS25.pdf?ci_sign=72b1a8dc376371581084ec59692fbe78626fa278 Category: THT Resistors
Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; Ø0.6x28mm; Ø2.5x6.5mm
Mounting: THT
Type of resistor: thin film
Leads dimensions: Ø0.6x28mm
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Resistance: 2.32MΩ
auf Bestellung 9441 Stücke:
Lieferzeit 14-21 Tag (e)
240+0.3 EUR
570+0.13 EUR
1220+0.059 EUR
1280+0.056 EUR
Mindestbestellmenge: 240
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VJ0805A561KXCAT VJ0805A561KXCAT VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880 Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 560pF; 200V; C0G (NP0); ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 560pF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
auf Bestellung 2200 Stücke:
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220+0.33 EUR
560+0.13 EUR
1200+0.06 EUR
1250+0.057 EUR
Mindestbestellmenge: 220
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IRL530PBF IRL530PBF VISHAY IRL530%2CSiHL530.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 91 Stücke:
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46+1.59 EUR
59+1.21 EUR
91+0.79 EUR
Mindestbestellmenge: 46
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IRL530STRRPBF VISHAY sihl530s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF9540STRRPBF VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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1.5KE130CA-E3/54 1.5KE130CA-E3/54 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDE94C12CE2FD96E0D5&compId=15ke_Ser.pdf?ci_sign=2a34c700b46a1d656ea632b3b2d75135d2d33282 Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1545 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
96+0.75 EUR
202+0.35 EUR
214+0.33 EUR
Mindestbestellmenge: 76
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593D107X9016D2TE3 593D107X9016D2TE3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BF9D54A6779C0259&compId=593d.pdf?ci_sign=89d23470ce808e6fc6489f0b2d4c231eb7e4529d Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±10%; 125mΩ
Manufacturer series: Tantamount
ESR value: 125mΩ
Kind of capacitor: low ESR
Case - mm: 7343
Operating temperature: -55...125°C
Case - inch: 2917
Case: D
Tolerance: ±10%
Type of capacitor: tantalum
Capacitance: 100µF
Operating voltage: 16V DC
Mounting: SMD
auf Bestellung 200 Stücke:
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35+2.1 EUR
87+0.82 EUR
143+0.5 EUR
152+0.47 EUR
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GRC00JE6821A00L GRC00JE6821A00L VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D58F0C6CC840D2&compId=GRC.pdf?ci_sign=92d3c6a8fa5a96a5ca5511c797a4e4aa77bdafd1 Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 6800uF; 10VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Operating temperature: -40...105°C
Capacitance: 6.8mF
Dimensions: 16x20mm
Operating voltage: 10V DC
Tolerance: ±20%
Service life: 2000h
auf Bestellung 75 Stücke:
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64+1.13 EUR
75+0.96 EUR
Mindestbestellmenge: 64
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IRFR9024TRLPBF VISHAY sihfr902.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRFR1N60ATRLPBF VISHAY sihfr1n6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Produkt ist nicht verfügbar
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IRFR1N60ATRPBF VISHAY sihfr1n6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Produkt ist nicht verfügbar
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IRFU1N60APBF VISHAY sihfr1n6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Produkt ist nicht verfügbar
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SIHFR1N60A-GE3 SIHFR1N60A-GE3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCC458A75FA6A143&compId=IRFR1N60A.pdf?ci_sign=ebfb7bcce254ade9a17457e6b543988683075e31 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Mounting: SMD
Case: DPAK; TO252
Kind of package: tube
On-state resistance:
Polarisation: unipolar
Drain-source voltage: 600V
Pulsed drain current: 5.6A
Drain current: 0.89A
Gate charge: 14nC
Power dissipation: 36W
Gate-source voltage: ±30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 79 Stücke:
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79+0.9 EUR
Mindestbestellmenge: 79
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SIHFR1N60ATRL-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Produkt ist nicht verfügbar
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SI7850ADP-T1-GE3 VISHAY si7850adp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A
Mounting: SMD
Case: PowerPAK® SO8
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 25mΩ
Power dissipation: 35.7W
Type of transistor: N-MOSFET
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
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SI7850DP-T1-E3 VISHAY 71625.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A
Mounting: SMD
Case: PowerPAK® SO8
Polarisation: unipolar
Gate charge: 27nC
On-state resistance: 22mΩ
Power dissipation: 0.9W
Type of transistor: N-MOSFET
Drain current: 6.2A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
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IRFI740GLCPBF VISHAY 91155.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 23A
Produkt ist nicht verfügbar
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IRLR014PBF IRLR014PBF VISHAY sihlr014.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.28Ω
Gate charge: 8.4nC
Gate-source voltage: ±10V
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IRLR014TRLPBF VISHAY sihlr014.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.28Ω
Gate charge: 8.4nC
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
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VJ1206A102JXACW1BC VJ1206A102JXACW1BC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Kind of capacitor: MLCC
Mounting: SMD
Capacitance: 1nF
Tolerance: ±5%
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
auf Bestellung 2500 Stücke:
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2128+0.034 EUR
2253+0.032 EUR
Mindestbestellmenge: 239
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CRCW0805620KJNTABC CRCW0805620KJNTABC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7 Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C
Case - mm: 2012
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Resistance: 620kΩ
Case - inch: 0805
auf Bestellung 3500 Stücke:
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3500+0.02 EUR
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CRCW0805620RFKTABC CRCW0805620RFKTABC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7 Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C
Case - mm: 2012
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Resistance: 620Ω
Case - inch: 0805
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4000+0.018 EUR
6500+0.011 EUR
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IRF9610SPBF VISHAY sihf9610.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
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IRF9610STRRPBF VISHAY sihf9610.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9630STRLPBF VISHAY IRF9630S_SiHF9630S.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Pulsed drain current: -26A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9640LPBF VISHAY IRF%28SiHF%299640%28S%2CL%29.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Kind of package: tube
Case: I2PAK; TO262
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Pulsed drain current: -44A
Drain current: -6.8A
Gate charge: 44nC
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Power dissipation: 125W
Produkt ist nicht verfügbar
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M43P203KB40 M43P203KB40 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDA4A1648551BF&compId=VISHAY-43.pdf?ci_sign=9c989ddf8ae931462465136665a167e2e8f26de6 Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 19x6.4x4.8mm
Terminal pitch: 12.7x2.54mm
Potentiometer standard: 19mm
Number of electrical turns: 15
Min. insulation resistance: 1GΩ
Track material: cermet
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25+2.95 EUR
26+2.79 EUR
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IRF9Z24STRLPBF VISHAY sihf9z24.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX85C20-TAP BZX85C20-TAP VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE587CA2099D64E2469&compId=BZX85C10-TAP.pdf?ci_sign=068488ce13943842c1c81b6b4758f46d16a648e7 Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 19910 Stücke:
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264+0.27 EUR
336+0.21 EUR
467+0.15 EUR
547+0.13 EUR
1238+0.058 EUR
1309+0.055 EUR
10000+0.053 EUR
Mindestbestellmenge: 264
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BZX85C68-TAP BZX85C68-TAP VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE587CA2099D64E2469&compId=BZX85C10-TAP.pdf?ci_sign=068488ce13943842c1c81b6b4758f46d16a648e7 Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
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490+0.15 EUR
980+0.073 EUR
1100+0.065 EUR
1230+0.058 EUR
1300+0.055 EUR
5000+0.053 EUR
Mindestbestellmenge: 490
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VJ0402G104KXQCW1BC VJ0402G104KXQCW1BC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 10V; X5R; ±10%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 10V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...85°C
auf Bestellung 10053 Stücke:
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5051+0.014 EUR
8929+0.008 EUR
10053+0.0072 EUR
Mindestbestellmenge: 5051
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IRFP350LCPBF VISHAY Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Produkt ist nicht verfügbar
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MCT06030C1008FP500 MCT06030C1008FP500 VISHAY mcx0x0xpre.pdf Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1Ω; 0.1W; ±1%; MCT0603; 0; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Resistance:
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...125°C; -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Case - inch: 0603
Manufacturer series: MCT0603
Version: 0
Case - mm: 1608
Produkt ist nicht verfügbar
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IRF630STRLPBF VISHAY sih630s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Mounting: SMD
Gate charge: 43nC
On-state resistance: 0.4Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±20V
Pulsed drain current: 36A
Power dissipation: 74W
Drain-source voltage: 200V
Case: D2PAK; TO263
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
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IRF630STRRPBF VISHAY sih630s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Mounting: SMD
Gate charge: 43nC
On-state resistance: 0.4Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±20V
Pulsed drain current: 36A
Power dissipation: 74W
Drain-source voltage: 200V
Case: D2PAK; TO263
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRF720SPBF VISHAY sihf720s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.1A
Pulsed drain current: 13A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 20nC
Kind of package: tube
Produkt ist nicht verfügbar
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NTCS0805E3334JHT NTCS0805E3334JHT VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DC3A4ED8AE3E28&compId=ntcs0805e3t.pdf?ci_sign=f55aa810fa710c24b5bf50290de027a7e0905cae Category: SMD measurement NTC thermistors
Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C
Case - inch: 0805
Resistance: 0.33MΩ
Power: 0.21W
Tolerance: ±5%
Operating temperature: -40...150°C
Material constant B: 3930K
Type of sensor: NTC thermistor
Mounting: SMD
auf Bestellung 1418 Stücke:
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313+0.23 EUR
343+0.21 EUR
353+0.2 EUR
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NTCS0805E3474FXT NTCS0805E3474FXT VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DC3A4ED8AE3E28&compId=ntcs0805e3t.pdf?ci_sign=f55aa810fa710c24b5bf50290de027a7e0905cae Category: SMD measurement NTC thermistors
Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 470kΩ
Operating temperature: -40...150°C
Power: 0.21W
Tolerance: ±1%
Mounting: SMD
Material constant B: 4025K
Case - inch: 0805
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177+0.4 EUR
1000+0.39 EUR
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IRLR024PBF VISHAY sihlr024.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
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IRLR024TRLPBF VISHAY sihlr024.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRLR024TRPBF VISHAY sihlr024.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MAL215097601E3 MAL215097601E3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB2BE00CF6AEF60D2&compId=150clz.pdf?ci_sign=c5433c77e7b20e4286662d4a478180358cb0e42d Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; 10x10x10mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Operating temperature: -55...105°C
Capacitance: 330µF
Operating voltage: 25V DC
Body dimensions: 10x10x10mm
Tolerance: ±20%
auf Bestellung 868 Stücke:
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28+2.6 EUR
45+1.62 EUR
75+0.96 EUR
80+0.9 EUR
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P6KE39A-E3/73 P6KE39A-E3/73 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDD89A4C6B48D4FC0D2&compId=p6ke.pdf?ci_sign=eef68df7435691c5e7a990d68d6a3bca2623211c Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; DO15; 7 inch reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: 7 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
auf Bestellung 2257 Stücke:
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193+0.37 EUR
244+0.29 EUR
410+0.17 EUR
435+0.16 EUR
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PR02000201009JN300 PR02000201009JN300 VISHAY pVersion=0046&contRep=ZT&docId=E2A3660DCA9A34F19A99005056AB752F&compId=PR_Vishay.pdf?ci_sign=589fb1d4e4206506921d35cc618e18cbe2720eaa Category: THT Resistors
Description: Resistor: power metal; THT; 10Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Mounting: THT
Body dimensions: Ø3.9x12mm
Power: 2W
Tolerance: ±5%
Resistance: 10Ω
Temperature coefficient: 250ppm/°C
Max. operating voltage: 500V
Leads: axial
Resistor features: high power and small dimension
Type of resistor: power metal
auf Bestellung 2290 Stücke:
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300+0.24 EUR
500+0.14 EUR
550+0.13 EUR
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MAL219367121E3 193pursi.pdf
Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 120uF; 450VDC; Ø25x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 120µF
Operating voltage: 450V DC
Body dimensions: Ø25x30mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...105°C
Produkt ist nicht verfügbar
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VJ0402V104ZXJCW2BC pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA117AB85A2749&compId=00306xVJW2BC.pdf?ci_sign=c67bf94761514bccf5d7f4b66019d360585e001c
VJ0402V104ZXJCW2BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 16V; Y5V; -20÷80%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: Y5V
Tolerance: -20...80%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -25...85°C
auf Bestellung 7707 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4700+0.015 EUR
Mindestbestellmenge: 4700
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SI7852DP-T1-E3 si7852dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 16.5mΩ
Power dissipation: 1.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSOP39438 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8ACD2A742E9FF6143&compId=TSOP39436.pdf?ci_sign=f10660b5f5c855bf068fb07726f92f5fb97afd4b
TSOP39438
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
auf Bestellung 1081 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
80+0.9 EUR
85+0.85 EUR
99+0.72 EUR
105+0.68 EUR
500+0.66 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
TSOP4138 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0BAF96C32129E27&compId=TSOP4138.pdf?ci_sign=7a03254831903f582a949bd5698a48bc95345eff
TSOP4138
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Connector variant: straight
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
99+0.73 EUR
146+0.49 EUR
154+0.46 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
TSOP4438 pVersion=0046&contRep=ZT&docId=005056AB752F1ED884C9820DC80A0A18&compId=TSOP4438.pdf?ci_sign=3322f3cf8b1903174897ca0f14bf4f2d6a424066
TSOP4438
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
auf Bestellung 408 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
89+0.81 EUR
103+0.7 EUR
109+0.66 EUR
113+0.63 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
TSOP58338 pVersion=0046&contRep=ZT&docId=005056AB752F1ED884C97E5F41D76A18&compId=TSOP58336.pdf?ci_sign=b4aecd88e119e00a0500410e8be1df59d3ed764b
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSOP6138TT pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0BB45F82B073E27&compId=TSOP6138TT.pdf?ci_sign=444e2347833381a899e8ee26ad28b87b0e86f6bf
TSOP6138TT
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
auf Bestellung 556 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
60+1.21 EUR
65+1.1 EUR
109+0.66 EUR
115+0.62 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
TSOP6238TT pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0BB490C0DEB1E27&compId=TSOP6238TT.pdf?ci_sign=b8dc249dbf5b67662b4df96ca20dcd25d047e783
TSOP6238TT
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
77+0.93 EUR
103+0.7 EUR
109+0.66 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
PA16NP472MAB15 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBD9116D482AE80D5&compId=p16-series.pdf?ci_sign=8b114df350ec09dcb670f4c9ff70a4c3e5d03566
Hersteller: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 500mW; linear; 16mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±20%
Power: 0.5W
Characteristics: linear
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PE30L0FL472KAB pVersion=0046&contRep=ZT&docId=005056AB752F1EE787BA75F12C106745&compId=pe30.pdf?ci_sign=c10cd9b96366e63c778e9fc60e39b673aa8e84a7
PE30L0FL472KAB
Hersteller: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Power: 3W
Tolerance: ±10%
Max. operating voltage: 300V
Temperature coefficient: 150ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Mounting: on panel
Operating temperature: -55...125°C
Shaft diameter: 6mm
Thread length: 12mm
Shaft length: 25mm
Electrical rotation angle: 270 ±10°
Mechanical rotation angle: 300 ±5°
Min. insulation resistance: 1TΩ
Leads: for soldering
Track material: cermet
Shaft surface: smooth
Potentiometer features: for industrial use; for military use
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.98 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TS53YJ102MR10 pVersion=0046&contRep=ZT&docId=E1C05AB5921022F1A6F5005056AB5A8F&compId=ts53yj.pdf?ci_sign=472ba78208969c07d575b9ea951ef69c484074bb
TS53YJ102MR10
Hersteller: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Leads: YJ
Track material: cermet
Kind of potentiometer: single turn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1,5Ncm
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
auf Bestellung 628 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.8 EUR
43+1.67 EUR
46+1.59 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IRF644STRLPBF sihf644s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF644STRRPBF sihf644s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFC233820333 mkp3382x2.pdf
BFC233820333
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 33nF; 630VDC; 310VAC; THT; ±20%; 7.5mm
Type of capacitor: polypropylene
Capacitance: 33nF
Tolerance: ±20%
Mounting: THT
Terminal pitch: 7.5mm
Body dimensions: 10x5x10.5mm
Operating voltage: 310V AC; 630V DC
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
75+0.95 EUR
125+0.58 EUR
132+0.54 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
SI2301CDS-T1-E3 si2301cd.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MRS25000C2324FCT00 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA9EAE4FD04845C0C4&compId=MRS25.pdf?ci_sign=72b1a8dc376371581084ec59692fbe78626fa278
MRS25000C2324FCT00
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; Ø0.6x28mm; Ø2.5x6.5mm
Mounting: THT
Type of resistor: thin film
Leads dimensions: Ø0.6x28mm
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Resistance: 2.32MΩ
auf Bestellung 9441 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+0.3 EUR
570+0.13 EUR
1220+0.059 EUR
1280+0.056 EUR
Mindestbestellmenge: 240
Im Einkaufswagen  Stück im Wert von  UAH
VJ0805A561KXCAT pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880
VJ0805A561KXCAT
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 560pF; 200V; C0G (NP0); ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 560pF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
220+0.33 EUR
560+0.13 EUR
1200+0.06 EUR
1250+0.057 EUR
Mindestbestellmenge: 220
Im Einkaufswagen  Stück im Wert von  UAH
IRL530PBF IRL530%2CSiHL530.pdf
IRL530PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.59 EUR
59+1.21 EUR
91+0.79 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IRL530STRRPBF sihl530s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9540STRRPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE130CA-E3/54 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE94C12CE2FD96E0D5&compId=15ke_Ser.pdf?ci_sign=2a34c700b46a1d656ea632b3b2d75135d2d33282
1.5KE130CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1545 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
96+0.75 EUR
202+0.35 EUR
214+0.33 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
593D107X9016D2TE3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BF9D54A6779C0259&compId=593d.pdf?ci_sign=89d23470ce808e6fc6489f0b2d4c231eb7e4529d
593D107X9016D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±10%; 125mΩ
Manufacturer series: Tantamount
ESR value: 125mΩ
Kind of capacitor: low ESR
Case - mm: 7343
Operating temperature: -55...125°C
Case - inch: 2917
Case: D
Tolerance: ±10%
Type of capacitor: tantalum
Capacitance: 100µF
Operating voltage: 16V DC
Mounting: SMD
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.1 EUR
87+0.82 EUR
143+0.5 EUR
152+0.47 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
GRC00JE6821A00L pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D58F0C6CC840D2&compId=GRC.pdf?ci_sign=92d3c6a8fa5a96a5ca5511c797a4e4aa77bdafd1
GRC00JE6821A00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 6800uF; 10VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Operating temperature: -40...105°C
Capacitance: 6.8mF
Dimensions: 16x20mm
Operating voltage: 10V DC
Tolerance: ±20%
Service life: 2000h
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
75+0.96 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9024TRLPBF sihfr902.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR1N60ATRLPBF sihfr1n6.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR1N60ATRPBF sihfr1n6.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFU1N60APBF sihfr1n6.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHFR1N60A-GE3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCC458A75FA6A143&compId=IRFR1N60A.pdf?ci_sign=ebfb7bcce254ade9a17457e6b543988683075e31
SIHFR1N60A-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Mounting: SMD
Case: DPAK; TO252
Kind of package: tube
On-state resistance:
Polarisation: unipolar
Drain-source voltage: 600V
Pulsed drain current: 5.6A
Drain current: 0.89A
Gate charge: 14nC
Power dissipation: 36W
Gate-source voltage: ±30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.9 EUR
Mindestbestellmenge: 79
Im Einkaufswagen  Stück im Wert von  UAH
SIHFR1N60ATRL-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Produkt ist nicht verfügbar
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SI7850ADP-T1-GE3 si7850adp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A
Mounting: SMD
Case: PowerPAK® SO8
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 25mΩ
Power dissipation: 35.7W
Type of transistor: N-MOSFET
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
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SI7850DP-T1-E3 71625.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A
Mounting: SMD
Case: PowerPAK® SO8
Polarisation: unipolar
Gate charge: 27nC
On-state resistance: 22mΩ
Power dissipation: 0.9W
Type of transistor: N-MOSFET
Drain current: 6.2A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
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IRFI740GLCPBF description 91155.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 23A
Produkt ist nicht verfügbar
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IRLR014PBF sihlr014.pdf
IRLR014PBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.28Ω
Gate charge: 8.4nC
Gate-source voltage: ±10V
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
106+0.68 EUR
111+0.64 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
IRLR014TRLPBF sihlr014.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.28Ω
Gate charge: 8.4nC
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VJ1206A102JXACW1BC pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a
VJ1206A102JXACW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Kind of capacitor: MLCC
Mounting: SMD
Capacitance: 1nF
Tolerance: ±5%
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
2128+0.034 EUR
2253+0.032 EUR
Mindestbestellmenge: 239
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CRCW0805620KJNTABC pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7
CRCW0805620KJNTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C
Case - mm: 2012
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Resistance: 620kΩ
Case - inch: 0805
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2300+0.032 EUR
3500+0.02 EUR
Mindestbestellmenge: 2300
Im Einkaufswagen  Stück im Wert von  UAH
CRCW0805620RFKTABC pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7
CRCW0805620RFKTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C
Case - mm: 2012
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Resistance: 620Ω
Case - inch: 0805
auf Bestellung 8099 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2200+0.034 EUR
4000+0.018 EUR
6500+0.011 EUR
Mindestbestellmenge: 2200
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IRF9610SPBF sihf9610.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9610STRRPBF sihf9610.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9630STRLPBF IRF9630S_SiHF9630S.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Pulsed drain current: -26A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9640LPBF IRF%28SiHF%299640%28S%2CL%29.pdf
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Kind of package: tube
Case: I2PAK; TO262
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Pulsed drain current: -44A
Drain current: -6.8A
Gate charge: 44nC
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Power dissipation: 125W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
M43P203KB40 pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDA4A1648551BF&compId=VISHAY-43.pdf?ci_sign=9c989ddf8ae931462465136665a167e2e8f26de6
M43P203KB40
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 19x6.4x4.8mm
Terminal pitch: 12.7x2.54mm
Potentiometer standard: 19mm
Number of electrical turns: 15
Min. insulation resistance: 1GΩ
Track material: cermet
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.53 EUR
25+2.95 EUR
26+2.79 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IRF9Z24STRLPBF sihf9z24.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C20-TAP pVersion=0046&contRep=ZT&docId=005056AB752F1EE587CA2099D64E2469&compId=BZX85C10-TAP.pdf?ci_sign=068488ce13943842c1c81b6b4758f46d16a648e7
BZX85C20-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 19910 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
336+0.21 EUR
467+0.15 EUR
547+0.13 EUR
1238+0.058 EUR
1309+0.055 EUR
10000+0.053 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C68-TAP pVersion=0046&contRep=ZT&docId=005056AB752F1EE587CA2099D64E2469&compId=BZX85C10-TAP.pdf?ci_sign=068488ce13943842c1c81b6b4758f46d16a648e7
BZX85C68-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 20380 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
490+0.15 EUR
980+0.073 EUR
1100+0.065 EUR
1230+0.058 EUR
1300+0.055 EUR
5000+0.053 EUR
Mindestbestellmenge: 490
Im Einkaufswagen  Stück im Wert von  UAH
VJ0402G104KXQCW1BC pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a
VJ0402G104KXQCW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 10V; X5R; ±10%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 10V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...85°C
auf Bestellung 10053 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5051+0.014 EUR
8929+0.008 EUR
10053+0.0072 EUR
Mindestbestellmenge: 5051
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IRFP350LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Produkt ist nicht verfügbar
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MCT06030C1008FP500 mcx0x0xpre.pdf
MCT06030C1008FP500
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1Ω; 0.1W; ±1%; MCT0603; 0; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Resistance:
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...125°C; -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Case - inch: 0603
Manufacturer series: MCT0603
Version: 0
Case - mm: 1608
Produkt ist nicht verfügbar
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IRF630STRLPBF sih630s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Mounting: SMD
Gate charge: 43nC
On-state resistance: 0.4Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±20V
Pulsed drain current: 36A
Power dissipation: 74W
Drain-source voltage: 200V
Case: D2PAK; TO263
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF630STRRPBF sih630s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Mounting: SMD
Gate charge: 43nC
On-state resistance: 0.4Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±20V
Pulsed drain current: 36A
Power dissipation: 74W
Drain-source voltage: 200V
Case: D2PAK; TO263
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRF720SPBF sihf720s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.1A
Pulsed drain current: 13A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 20nC
Kind of package: tube
Produkt ist nicht verfügbar
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NTCS0805E3334JHT pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DC3A4ED8AE3E28&compId=ntcs0805e3t.pdf?ci_sign=f55aa810fa710c24b5bf50290de027a7e0905cae
NTCS0805E3334JHT
Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C
Case - inch: 0805
Resistance: 0.33MΩ
Power: 0.21W
Tolerance: ±5%
Operating temperature: -40...150°C
Material constant B: 3930K
Type of sensor: NTC thermistor
Mounting: SMD
auf Bestellung 1418 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
313+0.23 EUR
343+0.21 EUR
353+0.2 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
NTCS0805E3474FXT pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DC3A4ED8AE3E28&compId=ntcs0805e3t.pdf?ci_sign=f55aa810fa710c24b5bf50290de027a7e0905cae
NTCS0805E3474FXT
Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 470kΩ
Operating temperature: -40...150°C
Power: 0.21W
Tolerance: ±1%
Mounting: SMD
Material constant B: 4025K
Case - inch: 0805
auf Bestellung 1657 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
133+0.54 EUR
168+0.43 EUR
177+0.4 EUR
1000+0.39 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
IRLR024PBF description sihlr024.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR024TRLPBF sihlr024.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR024TRPBF sihlr024.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MAL215097601E3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB2BE00CF6AEF60D2&compId=150clz.pdf?ci_sign=c5433c77e7b20e4286662d4a478180358cb0e42d
MAL215097601E3
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; 10x10x10mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Operating temperature: -55...105°C
Capacitance: 330µF
Operating voltage: 25V DC
Body dimensions: 10x10x10mm
Tolerance: ±20%
auf Bestellung 868 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.6 EUR
45+1.62 EUR
75+0.96 EUR
80+0.9 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
P6KE39A-E3/73 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD89A4C6B48D4FC0D2&compId=p6ke.pdf?ci_sign=eef68df7435691c5e7a990d68d6a3bca2623211c
P6KE39A-E3/73
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; DO15; 7 inch reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: 7 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
auf Bestellung 2257 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
244+0.29 EUR
410+0.17 EUR
435+0.16 EUR
Mindestbestellmenge: 193
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PR02000201009JN300 pVersion=0046&contRep=ZT&docId=E2A3660DCA9A34F19A99005056AB752F&compId=PR_Vishay.pdf?ci_sign=589fb1d4e4206506921d35cc618e18cbe2720eaa
PR02000201009JN300
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 10Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Mounting: THT
Body dimensions: Ø3.9x12mm
Power: 2W
Tolerance: ±5%
Resistance: 10Ω
Temperature coefficient: 250ppm/°C
Max. operating voltage: 500V
Leads: axial
Resistor features: high power and small dimension
Type of resistor: power metal
auf Bestellung 2290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
300+0.24 EUR
500+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 300
Im Einkaufswagen  Stück im Wert von  UAH
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