Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (5990) > Seite 94 nach 100
Foto | Bezeichnung | Hersteller | Beschreibung |
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NCR100W-10LX | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 850V; Ifmax: 1.1A; 800mA; Igt: 50uA; SOT223; SMD; Ifsm: 11A Mounting: SMD Turn-on time: 2µs Kind of package: reel; tape Type of thyristor: thyristor Case: SOT223 Max. off-state voltage: 850V Max. load current: 1.1A Load current: 0.8A Gate current: 50µA Max. forward impulse current: 11A |
Produkt ist nicht verfügbar |
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NCR100W-12LX | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 1kV; Ifmax: 1.1A; 800mA; Igt: 50uA; SOT223; SMD; reel,tape Mounting: SMD Turn-on time: 2µs Kind of package: reel; tape Type of thyristor: thyristor Case: SOT223 Max. off-state voltage: 1kV Max. load current: 1.1A Load current: 0.8A Gate current: 50µA Max. forward impulse current: 11A |
Produkt ist nicht verfügbar |
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BTA312-600D,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 5mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BTA312-600E,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 10mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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ESDAHD712BE2X | WeEn Semiconductors |
Category: Transil diodes - arrays Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional Mounting: SMD Case: SOT23-3 Max. off-state voltage: 7...12V Semiconductor structure: asymmetric; bidirectional Max. forward impulse current: 19A Breakdown voltage: 7.5...13.3V Leakage current: 1µA Number of channels: 2 Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Manufacturer series: HD Peak pulse power dissipation: 0.5kW |
Produkt ist nicht verfügbar |
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BYV32E-200PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 125A Case: SOT78; TO220AB Max. forward voltage: 0.85V Heatsink thickness: 1.25...1.4mm Reverse recovery time: 18ns |
Produkt ist nicht verfügbar |
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BT258-800R,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 8A Load current: 5A Gate current: 50µA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
auf Bestellung 1123 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA216B-600B,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BTA216B-600D,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Gate current: 5mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
auf Bestellung 635 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA216B-600E,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BTA216B-600F,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Gate current: 25mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BTA216B-800B,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: D2PAK Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
auf Bestellung 123 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA216X-600B,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
auf Bestellung 954 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA216X-600D,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 5mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BTA216X-600E,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BTA216X-600F,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 25mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BTA216X-800B,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 190A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
auf Bestellung 1228 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA216X-800B/L02Q | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 150A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BTA310X-600E,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 10A; TO220FP; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com Technology: 3Q; Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Max. off-state voltage: 600V Features of semiconductor devices: sensitive gate Gate current: 10mA Type of thyristor: triac Max. load current: 10A Max. forward impulse current: 85A |
Produkt ist nicht verfügbar |
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SMBJ33AJ | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 36.98÷40.3V; 11.3A; unidirectional; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.98...40.3V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
Produkt ist nicht verfügbar |
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BTA212B-600B,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BTA212B-600D,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 5mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BTA212B-600E,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 10mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
auf Bestellung 668 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA212B-600F,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 25mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BTA212X-600B,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BTA212X-600D,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 5mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
auf Bestellung 951 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA212X-600E,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 10mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BTA212X-600F,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 25mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BT137S-800E,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: DPAK Gate current: 10/25mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
auf Bestellung 1999 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV44-500,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: SOT78; TO220AB Max. forward voltage: 1.15V Heatsink thickness: max. 1.3mm Reverse recovery time: 60ns |
auf Bestellung 271 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV34-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 12A; SOT78,TO220AB Mounting: THT Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.25...1.4mm Case: SOT78; TO220AB Max. off-state voltage: 0.6kV Max. load current: 20A Max. forward voltage: 1.48V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 60ns Max. forward impulse current: 12A |
Produkt ist nicht verfügbar |
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MAC223A6,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q Case: TO220AB Mounting: THT Max. forward impulse current: 190A Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Max. off-state voltage: 0.4kV Max. load current: 25A Gate current: 50/75mA |
auf Bestellung 977 Stücke: Lieferzeit 14-21 Tag (e) |
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MAC223A8X,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q Case: TO220FP Mounting: THT Max. forward impulse current: 190A Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 20A Gate current: 50/75mA |
auf Bestellung 832 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA204W-800E,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 10mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
auf Bestellung 3970 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA204X-800E,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220FP Gate current: 10mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BYT79-500,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 14A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 130A Case: SOD59; TO220AC Max. forward voltage: 0.9V |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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BT137S-600G,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 50/100mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
auf Bestellung 2430 Stücke: Lieferzeit 14-21 Tag (e) |
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P4SOD58AX | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: unidirectional Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SOD |
Produkt ist nicht verfügbar |
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BT138X-800F,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 12A; TO220FP; Igt: 25/70mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220FP Gate current: 25/70mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BUJ100,126 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92 Mounting: THT Collector-emitter voltage: 400V Current gain: 9...20 Collector current: 1A Type of transistor: NPN Power dissipation: 2W Polarisation: bipolar Kind of package: Ammo Pack Case: TO92 |
Produkt ist nicht verfügbar |
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BUJ100,412 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92 Mounting: THT Case: TO92 Kind of package: bulk Collector-emitter voltage: 400V Current gain: 9...20 Collector current: 1A Type of transistor: NPN Power dissipation: 2W Polarisation: bipolar |
Produkt ist nicht verfügbar |
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BUJ100LR,412 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 1A Power dissipation: 2.1W Case: TO92 Current gain: 5...20 Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |
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BT136X-600F,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 4A; TO220FP; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220FP Gate current: 25/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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SMAJ30CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 33.55÷36.54V; 8.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.55...36.54V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
Produkt ist nicht verfügbar |
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BYC5X-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 44A; SOD113,TO220FP-2 Type of diode: rectifying Max. off-state voltage: 0.6kV Max. forward voltage: 2.2V Load current: 5A Semiconductor structure: single diode Case: SOD113; TO220FP-2 Mounting: THT Max. forward impulse current: 44A Kind of package: tube Reverse recovery time: 30ns |
Produkt ist nicht verfügbar |
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BYC5X-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 60A; SOD113,TO220FP-2 Type of diode: rectifying Max. off-state voltage: 0.6kV Max. forward voltage: 2.1V Load current: 5A Max. load current: 10A Semiconductor structure: single diode Case: SOD113; TO220FP-2 Mounting: THT Features of semiconductor devices: ultrafast switching Max. forward impulse current: 60A Kind of package: tube Reverse recovery time: 11ns |
auf Bestellung 875 Stücke: Lieferzeit 14-21 Tag (e) |
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BYC8DX-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 55A Case: SOD113; TO220FP-2 Max. forward voltage: 1.5V Reverse recovery time: 20ns |
Produkt ist nicht verfügbar |
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WNS30H100CBJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 15Ax2; D2PAK; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.67V Max. load current: 30A Max. off-state voltage: 100V Case: D2PAK Semiconductor structure: common cathode; double Max. forward impulse current: 330A Load current: 15A x2 |
auf Bestellung 338 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS30H100CQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 0.67V Max. load current: 30A Max. off-state voltage: 100V Case: TO220AB Semiconductor structure: common cathode; double Max. forward impulse current: 330A Load current: 15A x2 |
auf Bestellung 501 Stücke: Lieferzeit 14-21 Tag (e) |
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BT155W-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT Mounting: THT Case: SOT429; TO247-3 Kind of package: tube Max. off-state voltage: 1.2kV Turn-on time: 2µs Max. forward impulse current: 0.65kA Gate current: 50mA Load current: 50A Type of thyristor: thyristor Max. load current: 79A |
auf Bestellung 364 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA425Z-800BTQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com Technology: 3Q; Hi-Com Case: SOT1292; TO3P Mounting: THT Kind of package: tube Max. off-state voltage: 0.8kV Features of semiconductor devices: high temperature; sensitive gate Gate current: 50mA Max. load current: 25A Max. forward impulse current: 250A Type of thyristor: triac |
auf Bestellung 326 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA425Z-800CTQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com Technology: 3Q; Hi-Com Case: SOT1292; TO3P Mounting: THT Kind of package: tube Max. off-state voltage: 0.8kV Features of semiconductor devices: high temperature; sensitive gate Gate current: 35mA Max. load current: 25A Max. forward impulse current: 250A Type of thyristor: triac |
Produkt ist nicht verfügbar |
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BTA445Z-800BTQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com Kind of package: tube Technology: 3Q; Hi-Com Type of thyristor: triac Mounting: THT Case: SOT1292; TO3P Max. off-state voltage: 0.8kV Max. load current: 45A Gate current: 50mA Max. forward impulse current: 495A Features of semiconductor devices: high temperature |
Produkt ist nicht verfügbar |
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WNSC2M1K0170WQ | WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 5A Pulsed drain current: 20A Power dissipation: 79W Case: TO247-3 Gate-source voltage: -10...22V On-state resistance: 1Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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WNSC2M20120R6Q | WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 94A Pulsed drain current: 200A Power dissipation: 750W Case: TO247-4 Gate-source voltage: -12...22V On-state resistance: 20mΩ Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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WNSC2M40120R6Q | WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 52A Pulsed drain current: 100A Power dissipation: 405W Case: TO247-4 Gate-source voltage: -12...22V On-state resistance: 55mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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BYV32E-100,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB Semiconductor structure: common cathode; double Reverse recovery time: 25ns Max. forward impulse current: 137A Max. load current: 20A Max. off-state voltage: 100V Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.25...1.4mm Case: SOT78; TO220AB Max. forward voltage: 0.85V Mounting: THT Load current: 10A x2 |
auf Bestellung 391 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV32E-150,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB Semiconductor structure: common cathode; double Reverse recovery time: 25ns Max. forward impulse current: 137A Max. load current: 20A Max. off-state voltage: 150V Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.25...1.4mm Case: SOT78; TO220AB Max. forward voltage: 0.85V Mounting: THT Load current: 10A x2 |
auf Bestellung 916 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV32E-300PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 220A Case: SOT78; TO220AB Max. forward voltage: 1.25V Heatsink thickness: 1.25...1.4mm Reverse recovery time: 25ns |
Produkt ist nicht verfügbar |
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BYV32EB-200,118 | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: ultrafast switching Mounting: SMD Case: D2PAK; SOT404 Max. off-state voltage: 200V Max. load current: 20A Max. forward voltage: 0.72V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 25ns Max. forward impulse current: 137A |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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NCR100W-10LX |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 800mA; Igt: 50uA; SOT223; SMD; Ifsm: 11A
Mounting: SMD
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Max. forward impulse current: 11A
Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 800mA; Igt: 50uA; SOT223; SMD; Ifsm: 11A
Mounting: SMD
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Max. forward impulse current: 11A
Produkt ist nicht verfügbar
NCR100W-12LX |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.1A; 800mA; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
Max. off-state voltage: 1kV
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Max. forward impulse current: 11A
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.1A; 800mA; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
Max. off-state voltage: 1kV
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Max. forward impulse current: 11A
Produkt ist nicht verfügbar
BTA312-600D,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
BTA312-600E,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
ESDAHD712BE2X |
Hersteller: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 7...12V
Semiconductor structure: asymmetric; bidirectional
Max. forward impulse current: 19A
Breakdown voltage: 7.5...13.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Manufacturer series: HD
Peak pulse power dissipation: 0.5kW
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 7...12V
Semiconductor structure: asymmetric; bidirectional
Max. forward impulse current: 19A
Breakdown voltage: 7.5...13.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Manufacturer series: HD
Peak pulse power dissipation: 0.5kW
Produkt ist nicht verfügbar
BYV32E-200PQ |
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 125A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 18ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 125A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 18ns
Produkt ist nicht verfügbar
BT258-800R,127 |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
auf Bestellung 1123 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
131+ | 0.55 EUR |
146+ | 0.49 EUR |
204+ | 0.35 EUR |
216+ | 0.33 EUR |
1000+ | 0.32 EUR |
BTA216B-600B,118 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
BTA216B-600D,118 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 635 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
58+ | 1.24 EUR |
64+ | 1.13 EUR |
82+ | 0.87 EUR |
88+ | 0.82 EUR |
BTA216B-600E,118 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
BTA216B-600F,118 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
BTA216B-800B,118 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
68+ | 1.06 EUR |
76+ | 0.95 EUR |
97+ | 0.74 EUR |
103+ | 0.7 EUR |
BTA216X-600B,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 954 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
75+ | 0.96 EUR |
84+ | 0.86 EUR |
103+ | 0.7 EUR |
109+ | 0.66 EUR |
250+ | 0.64 EUR |
BTA216X-600D,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
BTA216X-600E,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
BTA216X-600F,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
BTA216X-800B,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 1228 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
81+ | 0.88 EUR |
107+ | 0.67 EUR |
114+ | 0.63 EUR |
500+ | 0.62 EUR |
BTA216X-800B/L02Q |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
BTA310X-600E,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220FP; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 600V
Features of semiconductor devices: sensitive gate
Gate current: 10mA
Type of thyristor: triac
Max. load current: 10A
Max. forward impulse current: 85A
Category: Triacs
Description: Triac; 600V; 10A; TO220FP; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 600V
Features of semiconductor devices: sensitive gate
Gate current: 10mA
Type of thyristor: triac
Max. load current: 10A
Max. forward impulse current: 85A
Produkt ist nicht verfügbar
SMBJ33AJ |
Hersteller: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36.98÷40.3V; 11.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36.98÷40.3V; 11.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
BTA212B-600B,118 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
BTA212B-600D,118 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
BTA212B-600E,118 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 668 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
90+ | 0.8 EUR |
102+ | 0.71 EUR |
111+ | 0.65 EUR |
117+ | 0.61 EUR |
BTA212B-600F,118 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
BTA212X-600B,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
BTA212X-600D,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 951 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
74+ | 0.97 EUR |
97+ | 0.74 EUR |
109+ | 0.66 EUR |
125+ | 0.57 EUR |
133+ | 0.54 EUR |
BTA212X-600E,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
BTA212X-600F,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
BT137S-800E,118 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 1999 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
75+ | 0.96 EUR |
99+ | 0.72 EUR |
143+ | 0.5 EUR |
226+ | 0.32 EUR |
239+ | 0.3 EUR |
BYV44-500,127 |
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
auf Bestellung 271 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 2.09 EUR |
38+ | 1.92 EUR |
43+ | 1.67 EUR |
79+ | 0.92 EUR |
82+ | 0.87 EUR |
BYV34-600,127 |
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 12A; SOT78,TO220AB
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.48V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 12A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 12A; SOT78,TO220AB
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.48V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 12A
Produkt ist nicht verfügbar
MAC223A6,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220AB
Mounting: THT
Max. forward impulse current: 190A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 25A
Gate current: 50/75mA
Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220AB
Mounting: THT
Max. forward impulse current: 190A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 25A
Gate current: 50/75mA
auf Bestellung 977 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
66+ | 1.09 EUR |
74+ | 0.98 EUR |
94+ | 0.77 EUR |
99+ | 0.72 EUR |
MAC223A8X,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220FP
Mounting: THT
Max. forward impulse current: 190A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 50/75mA
Category: Triacs
Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220FP
Mounting: THT
Max. forward impulse current: 190A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 50/75mA
auf Bestellung 832 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 1.14 EUR |
70+ | 1.03 EUR |
89+ | 0.81 EUR |
94+ | 0.77 EUR |
250+ | 0.76 EUR |
BTA204W-800E,135 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 3970 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
195+ | 0.37 EUR |
211+ | 0.34 EUR |
280+ | 0.26 EUR |
296+ | 0.24 EUR |
BTA204X-800E,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
BYT79-500,127 |
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
93+ | 0.78 EUR |
113+ | 0.64 EUR |
125+ | 0.57 EUR |
133+ | 0.54 EUR |
250+ | 0.53 EUR |
BT137S-600G,118 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 2430 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
151+ | 0.48 EUR |
167+ | 0.43 EUR |
211+ | 0.34 EUR |
223+ | 0.32 EUR |
P4SOD58AX |
Hersteller: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
Produkt ist nicht verfügbar
BT138X-800F,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 25/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 25/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
BUJ100,126 |
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Mounting: THT
Collector-emitter voltage: 400V
Current gain: 9...20
Collector current: 1A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: Ammo Pack
Case: TO92
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Mounting: THT
Collector-emitter voltage: 400V
Current gain: 9...20
Collector current: 1A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: Ammo Pack
Case: TO92
Produkt ist nicht verfügbar
BUJ100,412 |
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Mounting: THT
Case: TO92
Kind of package: bulk
Collector-emitter voltage: 400V
Current gain: 9...20
Collector current: 1A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Mounting: THT
Case: TO92
Kind of package: bulk
Collector-emitter voltage: 400V
Current gain: 9...20
Collector current: 1A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Produkt ist nicht verfügbar
BUJ100LR,412 |
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...20
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...20
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
BT136X-600F,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
SMAJ30CAJ |
Hersteller: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 33.55÷36.54V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.55...36.54V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 33.55÷36.54V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.55...36.54V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
BYC5X-600,127 |
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 44A; SOD113,TO220FP-2
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.2V
Load current: 5A
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Mounting: THT
Max. forward impulse current: 44A
Kind of package: tube
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 44A; SOD113,TO220FP-2
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.2V
Load current: 5A
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Mounting: THT
Max. forward impulse current: 44A
Kind of package: tube
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
BYC5X-600PQ |
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 60A; SOD113,TO220FP-2
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 5A
Max. load current: 10A
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Mounting: THT
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 11ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 60A; SOD113,TO220FP-2
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 5A
Max. load current: 10A
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Mounting: THT
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 11ns
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
93+ | 0.77 EUR |
106+ | 0.68 EUR |
122+ | 0.59 EUR |
129+ | 0.56 EUR |
BYC8DX-600,127 |
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.5V
Reverse recovery time: 20ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.5V
Reverse recovery time: 20ns
Produkt ist nicht verfügbar
WNS30H100CBJ |
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 15Ax2; D2PAK; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.67V
Max. load current: 30A
Max. off-state voltage: 100V
Case: D2PAK
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Load current: 15A x2
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 15Ax2; D2PAK; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.67V
Max. load current: 30A
Max. off-state voltage: 100V
Case: D2PAK
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Load current: 15A x2
auf Bestellung 338 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
67+ | 1.07 EUR |
80+ | 0.9 EUR |
91+ | 0.79 EUR |
111+ | 0.65 EUR |
117+ | 0.61 EUR |
WNS30H100CQ |
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 0.67V
Max. load current: 30A
Max. off-state voltage: 100V
Case: TO220AB
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 0.67V
Max. load current: 30A
Max. off-state voltage: 100V
Case: TO220AB
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Load current: 15A x2
auf Bestellung 501 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 1 EUR |
88+ | 0.82 EUR |
100+ | 0.72 EUR |
122+ | 0.59 EUR |
129+ | 0.56 EUR |
BT155W-1200TQ |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Mounting: THT
Case: SOT429; TO247-3
Kind of package: tube
Max. off-state voltage: 1.2kV
Turn-on time: 2µs
Max. forward impulse current: 0.65kA
Gate current: 50mA
Load current: 50A
Type of thyristor: thyristor
Max. load current: 79A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Mounting: THT
Case: SOT429; TO247-3
Kind of package: tube
Max. off-state voltage: 1.2kV
Turn-on time: 2µs
Max. forward impulse current: 0.65kA
Gate current: 50mA
Load current: 50A
Type of thyristor: thyristor
Max. load current: 79A
auf Bestellung 364 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 3.29 EUR |
25+ | 2.95 EUR |
32+ | 2.27 EUR |
34+ | 2.14 EUR |
BTA425Z-800BTQ |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Gate current: 50mA
Max. load current: 25A
Max. forward impulse current: 250A
Type of thyristor: triac
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Gate current: 50mA
Max. load current: 25A
Max. forward impulse current: 250A
Type of thyristor: triac
auf Bestellung 326 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 2.29 EUR |
35+ | 2.04 EUR |
46+ | 1.59 EUR |
48+ | 1.5 EUR |
BTA425Z-800CTQ |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Gate current: 35mA
Max. load current: 25A
Max. forward impulse current: 250A
Type of thyristor: triac
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Gate current: 35mA
Max. load current: 25A
Max. forward impulse current: 250A
Type of thyristor: triac
Produkt ist nicht verfügbar
BTA445Z-800BTQ |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Kind of package: tube
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: SOT1292; TO3P
Max. off-state voltage: 0.8kV
Max. load current: 45A
Gate current: 50mA
Max. forward impulse current: 495A
Features of semiconductor devices: high temperature
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Kind of package: tube
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: SOT1292; TO3P
Max. off-state voltage: 0.8kV
Max. load current: 45A
Gate current: 50mA
Max. forward impulse current: 495A
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
WNSC2M1K0170WQ |
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WNSC2M20120R6Q |
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 94A
Pulsed drain current: 200A
Power dissipation: 750W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 94A
Pulsed drain current: 200A
Power dissipation: 750W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
WNSC2M40120R6Q |
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 100A
Power dissipation: 405W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 100A
Power dissipation: 405W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
BYV32E-100,127 |
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Max. load current: 20A
Max. off-state voltage: 100V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Mounting: THT
Load current: 10A x2
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Max. load current: 20A
Max. off-state voltage: 100V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Mounting: THT
Load current: 10A x2
auf Bestellung 391 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 1 EUR |
85+ | 0.84 EUR |
97+ | 0.74 EUR |
115+ | 0.62 EUR |
122+ | 0.59 EUR |
BYV32E-150,127 |
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Max. load current: 20A
Max. off-state voltage: 150V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Mounting: THT
Load current: 10A x2
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Max. load current: 20A
Max. off-state voltage: 150V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Mounting: THT
Load current: 10A x2
auf Bestellung 916 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 1 EUR |
85+ | 0.84 EUR |
97+ | 0.74 EUR |
118+ | 0.61 EUR |
125+ | 0.58 EUR |
BYV32E-300PQ |
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
BYV32EB-200,118 |
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 200V
Max. load current: 20A
Max. forward voltage: 0.72V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 200V
Max. load current: 20A
Max. forward voltage: 0.72V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
71+ | 1.02 EUR |
83+ | 0.87 EUR |
96+ | 0.75 EUR |
121+ | 0.59 EUR |
128+ | 0.56 EUR |