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NXPSC16650B6J NXPSC16650B6J WeEn Semiconductors NXPSC16650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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WNSC2D16650CWQ WNSC2D16650CWQ WeEn Semiconductors WNSC2D16650CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.8V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
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WNSC6D16650B6J WeEn Semiconductors WNSC6D16650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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WNSC6D16650CW6Q WeEn Semiconductors WNSC6D16650CW6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.65V
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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BTA204-600D,127 BTA204-600D,127 WeEn Semiconductors BTA204-600D.pdf BTA204-600B.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 727 Stücke:
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176+0.41 EUR
193+0.37 EUR
215+0.33 EUR
243+0.29 EUR
Mindestbestellmenge: 176
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BTA204X-600F,127 BTA204X-600F,127 WeEn Semiconductors BTA204X-600F.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 781 Stücke:
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154+0.46 EUR
169+0.42 EUR
189+0.38 EUR
213+0.34 EUR
237+0.3 EUR
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BTA204X-600C,127 BTA204X-600C,127 WeEn Semiconductors BTA204X-600C.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600B,127 BTA204-600B,127 WeEn Semiconductors BTA204-600B.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600E,127 BTA204-600E,127 WeEn Semiconductors BTA204-600E.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Max. off-state voltage: 0.6kV
Type of thyristor: triac
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: sensitive gate
Mounting: THT
Gate current: 10mA
Max. load current: 4A
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
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BTA204W-600E,135 BTA204W-600E,135 WeEn Semiconductors PHGLS30330-1.pdf?t.download=true&u=5oefqw BTA204W-600E.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204X-600D,127 BTA204X-600D,127 WeEn Semiconductors BTA204X-600D.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600C,127 BTA204-600C,127 WeEn Semiconductors BTA204-600C.pdf PHGLS30374-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600F,127 BTA204-600F,127 WeEn Semiconductors BTA204-600F.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204S-1000C,118 BTA204S-1000C,118 WeEn Semiconductors BTA204S-1000C.pdf Category: Triacs
Description: Triac; 1kV; 4A; DPAK; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 4A
Case: DPAK
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204S-600F,118 BTA204S-600F,118 WeEn Semiconductors BTA204S-600F.pdf Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600C,135 BTA204W-600C,135 WeEn Semiconductors BTA204W-600C.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA204W-600D,135 BTA204W-600D,135 WeEn Semiconductors BTA204W-600D.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600F,135 BTA204W-600F,135 WeEn Semiconductors BTA204W-600F.pdf BTA204W-600F.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204X-600B,127 BTA204X-600B,127 WeEn Semiconductors BTA204X-600B.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204X-600E,127 BTA204X-600E,127 WeEn Semiconductors BTA204X-600E.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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NXPSC04650B NXPSC04650B WeEn Semiconductors NXPSC04650B.pdf _ween_psg2020.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Load current: 4A
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
auf Bestellung 9 Stücke:
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9+7.95 EUR
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NXPSC04650Q NXPSC04650Q WeEn Semiconductors NXPSC04650.pdf _ween_psg2020.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Load current: 4A
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
auf Bestellung 25 Stücke:
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25+2.86 EUR
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NXPLQSC30650W6Q NXPLQSC30650W6Q WeEn Semiconductors nxplqsc30650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 30A
Max. forward impulse current: 50A
Kind of package: tube
Max. forward voltage: 1.95V
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NXPSC046506Q NXPSC046506Q WeEn Semiconductors nxpsc04650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: tube
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NXPSC04650B6J NXPSC04650B6J WeEn Semiconductors nxpsc04650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: reel; tape
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NXPSC04650D6J NXPSC04650D6J WeEn Semiconductors nxpsc04650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NXPSC04650X6Q NXPSC04650X6Q WeEn Semiconductors nxpsc04650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: tube
Produkt ist nicht verfügbar
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NXPSC066506Q NXPSC066506Q WeEn Semiconductors nxpsc06650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: tube
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NXPSC06650B6J NXPSC06650B6J WeEn Semiconductors nxpsc06650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: reel; tape
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NXPSC06650D6J NXPSC06650D6J WeEn Semiconductors nxpsc06650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NXPSC06650X6Q NXPSC06650X6Q WeEn Semiconductors nxpsc06650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: tube
Produkt ist nicht verfügbar
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NXPSC086506Q NXPSC086506Q WeEn Semiconductors nxpsc08650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: tube
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NXPSC08650B6J NXPSC08650B6J WeEn Semiconductors nxpsc08650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NXPSC08650D6J NXPSC08650D6J WeEn Semiconductors nxpsc08650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NXPSC08650X6Q NXPSC08650X6Q WeEn Semiconductors nxpsc08650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: tube
Produkt ist nicht verfügbar
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NXPSC106506Q NXPSC106506Q WeEn Semiconductors NXPSC106506Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
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NXPSC10650B6J NXPSC10650B6J WeEn Semiconductors NXPSC10650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NXPSC10650D6J NXPSC10650D6J WeEn Semiconductors NXPSC10650D6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NXPSC10650X6Q NXPSC10650X6Q WeEn Semiconductors NXPSC10650X6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
Produkt ist nicht verfügbar
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5.0SMDJ78CAJ WeEn Semiconductors 5.0SMDJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 39.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
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BT151U-500C,127 BT151U-500C,127 WeEn Semiconductors Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; tube; 2us
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 2mA
Load current: 7.5A
Max. off-state voltage: 500V
Max. load current: 12A
Max. forward impulse current: 100A
Case: IPAK
Produkt ist nicht verfügbar
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BTA410Y-600BT,127 BTA410Y-600BT,127 WeEn Semiconductors BTA410Y-600BT.pdf Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA206-800CT,127 BTA206-800CT,127 WeEn Semiconductors bta206-800ct.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
auf Bestellung 954 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
142+0.51 EUR
172+0.42 EUR
185+0.39 EUR
500+0.37 EUR
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BTA206X-800ET,127 BTA206X-800ET,127 WeEn Semiconductors bta206x-800et.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 984 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
90+0.8 EUR
107+0.67 EUR
121+0.59 EUR
137+0.52 EUR
500+0.42 EUR
Mindestbestellmenge: 68
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BTA206-800ET,127 BTA206-800ET,127 WeEn Semiconductors PHGLS23949-1.pdf?t.download=true&u=5oefqw bta206-800et.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 10mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
129+0.56 EUR
162+0.44 EUR
180+0.4 EUR
500+0.37 EUR
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BTA202X-600D,127 BTA202X-600D,127 WeEn Semiconductors BTA202X-600D_127.pdf Category: Triacs
Description: Triac; 600V; 2A; TO220FP; Igt: 5mA; Ifsm: 14A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 2A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 14A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 642 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
240+0.3 EUR
266+0.27 EUR
500+0.24 EUR
Mindestbestellmenge: 193
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BT138X-800 BT138X-800 WeEn Semiconductors BT138X-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BUJD203A,127 BUJD203A,127 WeEn Semiconductors BUJD203A.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 425V; 4A; 80W; TO220AB
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 11...22
Collector-emitter voltage: 425V
Power dissipation: 80W
Polarisation: bipolar
Case: TO220AB
Mounting: THT
Produkt ist nicht verfügbar
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P6SMBJ28CAJ WeEn Semiconductors P6SMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.33...34.16V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA425Z-800CTQ WeEn Semiconductors BTA425Z-800CT.pdf Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Case: SOT1292; TO3P
Mounting: THT
Type of thyristor: triac
Kind of package: tube
Gate current: 35mA
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
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BTA201-800ER,412 BTA201-800ER,412 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Case: TO92
Mounting: THT
Kind of package: bulk
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Gate current: 10mA
Max. load current: 1A
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
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MAC223A6,127 MAC223A6,127 WeEn Semiconductors MAC223A6.pdf Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 25A
Case: TO220AB
Gate current: 50/75mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Technology: 4Q
auf Bestellung 764 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.5 EUR
53+1.37 EUR
57+1.27 EUR
59+1.22 EUR
100+1.13 EUR
250+1.04 EUR
500+0.97 EUR
Mindestbestellmenge: 29
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BT139-800.127 BT139-800.127 WeEn Semiconductors BT139-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 155A
Technology: 4Q
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BYC30W-600PQ BYC30W-600PQ WeEn Semiconductors BYC30W-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
68+1.06 EUR
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BYC30X-600P,127 BYC30X-600P,127 WeEn Semiconductors byc30x-600p.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
auf Bestellung 718 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.23 EUR
38+1.9 EUR
41+1.74 EUR
47+1.54 EUR
51+1.42 EUR
100+1.29 EUR
250+1.22 EUR
Mindestbestellmenge: 33
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BYC30WT-600PQ BYC30WT-600PQ WeEn Semiconductors BYC30WT-600P.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 70ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-3
Max. forward voltage: 1.38V
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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BYC30W-600PT2Q WeEn Semiconductors BYC30W-600PT2Q.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 26ns
Produkt ist nicht verfügbar
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BYC30-1200PQ BYC30-1200PQ WeEn Semiconductors byc30-1200p.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD59; TO220AC
Max. forward voltage: 3.3V
Reverse recovery time: 65ns
Heatsink thickness: 1.14...1.4mm
Produkt ist nicht verfügbar
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BYC30-600P,127 BYC30-600P,127 WeEn Semiconductors BYC30-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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BYC30B-600PJ BYC30B-600PJ WeEn Semiconductors BYC30B-600P.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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NXPSC16650B6J NXPSC16650B6J.pdf
NXPSC16650B6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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WNSC2D16650CWQ WNSC2D16650CW.pdf
WNSC2D16650CWQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.8V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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WNSC6D16650B6J WNSC6D16650B6J.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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WNSC6D16650CW6Q WNSC6D16650CW6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.65V
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BTA204-600D,127 BTA204-600D.pdf BTA204-600B.pdf
BTA204-600D,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 727 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
176+0.41 EUR
193+0.37 EUR
215+0.33 EUR
243+0.29 EUR
Mindestbestellmenge: 176
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BTA204X-600F,127 BTA204X-600F.pdf
BTA204X-600F,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 781 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
154+0.46 EUR
169+0.42 EUR
189+0.38 EUR
213+0.34 EUR
237+0.3 EUR
Mindestbestellmenge: 154
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BTA204X-600C,127 BTA204X-600C.pdf
BTA204X-600C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA204-600B,127 BTA204-600B.pdf
BTA204-600B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA204-600E,127 BTA204-600E.pdf
BTA204-600E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Max. off-state voltage: 0.6kV
Type of thyristor: triac
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: sensitive gate
Mounting: THT
Gate current: 10mA
Max. load current: 4A
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
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BTA204W-600E,135 PHGLS30330-1.pdf?t.download=true&u=5oefqw BTA204W-600E.pdf
BTA204W-600E,135
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA204X-600D,127 BTA204X-600D.pdf
BTA204X-600D,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA204-600C,127 BTA204-600C.pdf PHGLS30374-1.pdf?t.download=true&u=5oefqw
BTA204-600C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA204-600F,127 BTA204-600F.pdf
BTA204-600F,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA204S-1000C,118 BTA204S-1000C.pdf
BTA204S-1000C,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 4A; DPAK; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 4A
Case: DPAK
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA204S-600F,118 BTA204S-600F.pdf
BTA204S-600F,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA204W-600C,135 BTA204W-600C.pdf
BTA204W-600C,135
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA204W-600D,135 BTA204W-600D.pdf
BTA204W-600D,135
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA204W-600F,135 BTA204W-600F.pdf BTA204W-600F.pdf
BTA204W-600F,135
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA204X-600B,127 BTA204X-600B.pdf
BTA204X-600B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA204X-600E,127 BTA204X-600E.pdf
BTA204X-600E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650B NXPSC04650B.pdf _ween_psg2020.pdf
NXPSC04650B
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Load current: 4A
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650Q NXPSC04650.pdf _ween_psg2020.pdf
NXPSC04650Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Load current: 4A
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
NXPLQSC30650W6Q nxplqsc30650w.pdf
NXPLQSC30650W6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 30A
Max. forward impulse current: 50A
Kind of package: tube
Max. forward voltage: 1.95V
Produkt ist nicht verfügbar
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NXPSC046506Q nxpsc04650.pdf
NXPSC046506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650B6J nxpsc04650b.pdf
NXPSC04650B6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650D6J nxpsc04650d.pdf
NXPSC04650D6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650X6Q nxpsc04650x.pdf
NXPSC04650X6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC066506Q nxpsc06650.pdf
NXPSC066506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC06650B6J nxpsc06650b.pdf
NXPSC06650B6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC06650D6J nxpsc06650d.pdf
NXPSC06650D6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC06650X6Q nxpsc06650x.pdf
NXPSC06650X6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC086506Q nxpsc08650.pdf
NXPSC086506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC08650B6J nxpsc08650b.pdf
NXPSC08650B6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC08650D6J nxpsc08650d.pdf
NXPSC08650D6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC08650X6Q nxpsc08650x.pdf
NXPSC08650X6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC106506Q NXPSC106506Q.pdf
NXPSC106506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC10650B6J NXPSC10650B6J.pdf
NXPSC10650B6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC10650D6J NXPSC10650D6J.pdf
NXPSC10650D6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC10650X6Q NXPSC10650X6Q.pdf
NXPSC10650X6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
Produkt ist nicht verfügbar
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5.0SMDJ78CAJ 5.0SMDJ.pdf
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 39.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT151U-500C,127
BT151U-500C,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; tube; 2us
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 2mA
Load current: 7.5A
Max. off-state voltage: 500V
Max. load current: 12A
Max. forward impulse current: 100A
Case: IPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA410Y-600BT,127 BTA410Y-600BT.pdf
BTA410Y-600BT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA206-800CT,127 bta206-800ct.pdf
BTA206-800CT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
auf Bestellung 954 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
142+0.51 EUR
172+0.42 EUR
185+0.39 EUR
500+0.37 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
BTA206X-800ET,127 bta206x-800et.pdf
BTA206X-800ET,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 984 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
90+0.8 EUR
107+0.67 EUR
121+0.59 EUR
137+0.52 EUR
500+0.42 EUR
Mindestbestellmenge: 68
Im Einkaufswagen  Stück im Wert von  UAH
BTA206-800ET,127 PHGLS23949-1.pdf?t.download=true&u=5oefqw bta206-800et.pdf
BTA206-800ET,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 10mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
129+0.56 EUR
162+0.44 EUR
180+0.4 EUR
500+0.37 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
BTA202X-600D,127 BTA202X-600D_127.pdf
BTA202X-600D,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 2A; TO220FP; Igt: 5mA; Ifsm: 14A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 2A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 14A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 642 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
240+0.3 EUR
266+0.27 EUR
500+0.24 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
BT138X-800 BT138X-800.pdf _ween_psg2020.pdf
BT138X-800
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJD203A,127 BUJD203A.pdf
BUJD203A,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 425V; 4A; 80W; TO220AB
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 11...22
Collector-emitter voltage: 425V
Power dissipation: 80W
Polarisation: bipolar
Case: TO220AB
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ28CAJ P6SMBJ.pdf
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.33...34.16V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425Z-800CTQ BTA425Z-800CT.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Case: SOT1292; TO3P
Mounting: THT
Type of thyristor: triac
Kind of package: tube
Gate current: 35mA
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800ER,412 bta201-800er.pdf
BTA201-800ER,412
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Case: TO92
Mounting: THT
Kind of package: bulk
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Gate current: 10mA
Max. load current: 1A
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MAC223A6,127 MAC223A6.pdf
MAC223A6,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 25A
Case: TO220AB
Gate current: 50/75mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Technology: 4Q
auf Bestellung 764 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.5 EUR
53+1.37 EUR
57+1.27 EUR
59+1.22 EUR
100+1.13 EUR
250+1.04 EUR
500+0.97 EUR
Mindestbestellmenge: 29
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BT139-800.127 BT139-800.pdf _ween_psg2020.pdf
BT139-800.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 155A
Technology: 4Q
Produkt ist nicht verfügbar
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BYC30W-600PQ BYC30W-600P.pdf
BYC30W-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
68+1.06 EUR
Mindestbestellmenge: 38
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BYC30X-600P,127 byc30x-600p.pdf _ween_psg2020.pdf
BYC30X-600P,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
auf Bestellung 718 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.23 EUR
38+1.9 EUR
41+1.74 EUR
47+1.54 EUR
51+1.42 EUR
100+1.29 EUR
250+1.22 EUR
Mindestbestellmenge: 33
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BYC30WT-600PQ BYC30WT-600P.pdf _ween_psg2020.pdf
BYC30WT-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 70ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-3
Max. forward voltage: 1.38V
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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BYC30W-600PT2Q BYC30W-600PT2Q.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 26ns
Produkt ist nicht verfügbar
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BYC30-1200PQ byc30-1200p.pdf _ween_psg2020.pdf
BYC30-1200PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD59; TO220AC
Max. forward voltage: 3.3V
Reverse recovery time: 65ns
Heatsink thickness: 1.14...1.4mm
Produkt ist nicht verfügbar
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BYC30-600P,127 BYC30-600P.pdf
BYC30-600P,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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BYC30B-600PJ BYC30B-600P.pdf
BYC30B-600PJ
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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