Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (5766) > Seite 93 nach 97
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BTA420X-800CT/L02Q | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Gate current: 35mA Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Technology: 3Q; Hi-Com Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA420Y-800BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Gate current: 50mA Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Technology: 3Q; Hi-Com Max. load current: 20A Max. forward impulse current: 220A Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA420Y-800CT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Gate current: 35mA Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Technology: 3Q; Hi-Com Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MURS360BJ | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A Type of diode: rectifying Max. off-state voltage: 0.6kV Load current: 3A Case: SMB Max. forward voltage: 0.88V Max. forward impulse current: 100A Features of semiconductor devices: ultrafast switching Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 50ns Kind of package: reel; tape |
auf Bestellung 2149 Stücke: Lieferzeit 14-21 Tag (e) |
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WSJM65R099DQ | WeEn Semiconductors |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 128A Power dissipation: 240W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WSJM65R099DTLJ | WeEn Semiconductors |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 100A Power dissipation: 147W Case: TOLL Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BTA316X-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
auf Bestellung 1880 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA316B-800E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: D2PAK Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
auf Bestellung 797 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA316B-600E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
auf Bestellung 741 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA316-600C,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 35mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA316-600BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA316-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA316X-800C,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 35mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA316-800CTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 35mA Max. forward impulse current: 150A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
auf Bestellung 1995 Stücke: Lieferzeit 14-21 Tag (e) |
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| BTA316-600ET/DGQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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ACTT2S-800E,118 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD Mounting: SMD Case: DPAK Max. off-state voltage: 0.8kV Kind of package: reel; tape Gate current: 10mA Max. load current: 2A Type of thyristor: AC switch |
auf Bestellung 2178 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMCJ58AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58V Breakdown voltage: 65...70.6V Max. forward impulse current: 16.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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WNSC16650CWQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Semiconductor structure: common cathode; double Case: TO247-3 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. forward voltage: 1.7V Load current: 8A x2 Max. load current: 16A Max. forward impulse current: 48A Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 480 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NXPSC166506Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube Semiconductor structure: single diode Case: TO220AC Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. forward voltage: 1.7V Load current: 16A Max. forward impulse current: 96A Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NXPSC16650B6J | WeEn Semiconductors |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape Semiconductor structure: single diode Case: D2PAK Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. forward voltage: 1.7V Load current: 16A Max. forward impulse current: 96A Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WNSC2D16650CWQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Semiconductor structure: common cathode; double Case: TO247-3 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. forward voltage: 1.8V Load current: 8A x2 Max. load current: 16A Max. forward impulse current: 48A Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WNSC6D16650B6J | WeEn Semiconductors |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape Semiconductor structure: single diode Case: D2PAK Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Load current: 16A Max. load current: 32A Max. forward impulse current: 110A Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WNSC6D16650CW6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube Semiconductor structure: single diode Case: TO247-3 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. forward voltage: 1.65V Load current: 16A Max. load current: 32A Max. forward impulse current: 110A Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BTA204-600D,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 5mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
auf Bestellung 720 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA204X-600F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220FP Gate current: 25mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
auf Bestellung 781 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA204X-600C,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220FP Gate current: 35mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA204-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 50mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA204-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 10mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA204W-600E,135 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: SOT223 Gate current: 10mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA204X-600D,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220FP; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220FP Gate current: 5mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA204-600C,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 35mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA204-600F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 25mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA204S-1000C,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 1kV; 4A; DPAK; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com; sensitive gate Type of thyristor: triac Max. off-state voltage: 1kV Max. load current: 4A Case: DPAK Gate current: 35mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA204S-600F,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; DPAK; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: DPAK Gate current: 25mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA204W-600C,135 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: SOT223 Gate current: 35mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA204W-600D,135 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; SOT223; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: SOT223 Gate current: 5mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA204W-600F,135 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; SOT223; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: SOT223 Gate current: 25mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA204X-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220FP; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220FP Gate current: 50mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA204X-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220FP Gate current: 10mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NXPSC04650B | WeEn Semiconductors |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape Case: D2PAK Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Max. forward voltage: 1.5V Load current: 4A Max. load current: 8A Max. forward impulse current: 24A Max. off-state voltage: 650V |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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NXPSC04650Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.5V Max. forward impulse current: 24A Kind of package: tube Max. load current: 8A |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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NXPLQSC30650W6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 30A Max. forward impulse current: 50A Kind of package: tube Max. forward voltage: 1.95V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| 5.0SMDJ78CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 78V Breakdown voltage: 86.7...95.8V Max. forward impulse current: 39.7A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: 5.0SMDJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BT151U-500C,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: IPAK Mounting: THT Kind of package: tube Max. forward impulse current: 100A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA410Y-600BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 10A Case: TO220AB Gate current: 50mA Max. forward impulse current: 100A Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Technology: 3Q; Hi-Com |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTA206-800CT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 6A Case: TO220AB Gate current: 35mA Max. forward impulse current: 66A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
auf Bestellung 954 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA206X-800ET,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 6A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 6A Case: TO220FP Gate current: 10mA Max. forward impulse current: 60A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
auf Bestellung 984 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA206-800ET,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 6A; TO220AB; Igt: 10mA; Ifsm: 66A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 6A Case: TO220AB Gate current: 10mA Max. forward impulse current: 66A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
auf Bestellung 949 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA202X-600D,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 2A; TO220FP; Igt: 5mA; Ifsm: 14A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 2A Case: TO220FP Gate current: 5mA Max. forward impulse current: 14A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
auf Bestellung 632 Stücke: Lieferzeit 14-21 Tag (e) |
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BT138X-800 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220FP Gate current: 35/70mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BUJD203A,127 | WeEn Semiconductors |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 425V; 4A; 80W; TO220AB Features of semiconductor devices: integrated anti-parallel diode Type of transistor: NPN Kind of package: tube Collector current: 4A Current gain: 11...22 Collector-emitter voltage: 425V Power dissipation: 80W Polarisation: bipolar Case: TO220AB Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| P6SMBJ28CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.33...34.16V Max. forward impulse current: 13.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BTA425Z-800CTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com Case: SOT1292; TO3P Mounting: THT Kind of package: tube Gate current: 35mA Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Technology: 3Q; Hi-Com Max. load current: 25A Max. forward impulse current: 250A Max. off-state voltage: 0.8kV |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA201-800ER,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com Case: TO92 Mounting: THT Kind of package: bulk Max. off-state voltage: 0.8kV Features of semiconductor devices: sensitive gate Type of thyristor: triac Gate current: 10mA Max. load current: 1A Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MAC223A6,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q Type of thyristor: triac Max. off-state voltage: 0.4kV Max. load current: 25A Case: TO220AB Gate current: 50/75mA Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Max. forward impulse current: 190A Technology: 4Q |
auf Bestellung 764 Stücke: Lieferzeit 14-21 Tag (e) |
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BT139-800.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 35/70mA Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Max. forward impulse current: 155A Technology: 4Q |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BYC30W-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 0.3kA Case: TO247AC Modified Max. forward voltage: 1.8V Reverse recovery time: 22ns |
auf Bestellung 230 Stücke: Lieferzeit 14-21 Tag (e) |
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BYC30X-600P,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; Ufmax: 2.75V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 200A Case: SOD113; TO220FP-2 Max. forward voltage: 2.75V Reverse recovery time: 35ns |
auf Bestellung 718 Stücke: Lieferzeit 14-21 Tag (e) |
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BYC30WT-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 70ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 270A Case: TO247-3 Max. forward voltage: 1.38V Reverse recovery time: 70ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BYC30W-600PT2Q | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-2; 26ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 270A Case: TO247-2 Max. forward voltage: 2.75V Max. load current: 60A Reverse recovery time: 26ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BTA420X-800CT/L02Q |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA420Y-800BT,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 220A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 220A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA420Y-800CT,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MURS360BJ |
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Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 3A
Case: SMB
Max. forward voltage: 0.88V
Max. forward impulse current: 100A
Features of semiconductor devices: ultrafast switching
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 3A
Case: SMB
Max. forward voltage: 0.88V
Max. forward impulse current: 100A
Features of semiconductor devices: ultrafast switching
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Kind of package: reel; tape
auf Bestellung 2149 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 173+ | 0.49 EUR |
| 242+ | 0.36 EUR |
| 325+ | 0.26 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| WSJM65R099DQ |
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Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| WSJM65R099DTLJ |
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Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 147W
Case: TOLL
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 147W
Case: TOLL
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA316X-800E,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 1880 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 53+ | 1.63 EUR |
| 74+ | 1.15 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.74 EUR |
| BTA316B-800E,118 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 797 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 73+ | 1.18 EUR |
| 81+ | 1.06 EUR |
| 91+ | 0.94 EUR |
| 101+ | 0.84 EUR |
| 108+ | 0.79 EUR |
| BTA316B-600E,118 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 741 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 65+ | 1.33 EUR |
| 80+ | 1.07 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.82 EUR |
| BTA316-600C,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 68+ | 1.26 EUR |
| 76+ | 1.12 EUR |
| BTA316-600BT,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA316-600E,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA316X-800C,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA316-800CTQ |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 76+ | 1.12 EUR |
| 93+ | 0.93 EUR |
| 105+ | 0.81 EUR |
| 117+ | 0.73 EUR |
| 500+ | 0.68 EUR |
| BTA316-600ET/DGQ |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ACTT2S-800E,118 |
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Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Gate current: 10mA
Max. load current: 2A
Type of thyristor: AC switch
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Gate current: 10mA
Max. load current: 2A
Type of thyristor: AC switch
auf Bestellung 2178 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 97+ | 0.88 EUR |
| 137+ | 0.62 EUR |
| 154+ | 0.55 EUR |
| 182+ | 0.46 EUR |
| 250+ | 0.43 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.37 EUR |
| SMCJ58AJ |
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Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WNSC16650CWQ |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.7V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.7V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 480 Stücke
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| NXPSC166506Q |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Semiconductor structure: single diode
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.7V
Load current: 16A
Max. forward impulse current: 96A
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Semiconductor structure: single diode
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.7V
Load current: 16A
Max. forward impulse current: 96A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| NXPSC16650B6J |
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Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Semiconductor structure: single diode
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.7V
Load current: 16A
Max. forward impulse current: 96A
Max. off-state voltage: 650V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Semiconductor structure: single diode
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.7V
Load current: 16A
Max. forward impulse current: 96A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| WNSC2D16650CWQ |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.8V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.8V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| WNSC6D16650B6J |
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Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Semiconductor structure: single diode
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Semiconductor structure: single diode
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| WNSC6D16650CW6Q |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Semiconductor structure: single diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.65V
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Semiconductor structure: single diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.65V
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA204-600D,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 176+ | 0.49 EUR |
| 193+ | 0.44 EUR |
| 215+ | 0.39 EUR |
| 243+ | 0.35 EUR |
| BTA204X-600F,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 781 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 154+ | 0.55 EUR |
| 169+ | 0.5 EUR |
| 189+ | 0.45 EUR |
| 213+ | 0.4 EUR |
| 237+ | 0.36 EUR |
| BTA204X-600C,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA204-600B,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA204-600E,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA204W-600E,135 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA204X-600D,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA204-600C,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA204-600F,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
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| BTA204S-1000C,118 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 4A; DPAK; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 4A
Case: DPAK
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 1kV; 4A; DPAK; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 4A
Case: DPAK
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA204S-600F,118 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA204W-600C,135 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA204W-600D,135 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA204W-600F,135 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA204X-600B,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA204X-600E,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
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| NXPSC04650B |
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Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Load current: 4A
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Load current: 4A
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 9.46 EUR |
| NXPSC04650Q |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.5V
Max. forward impulse current: 24A
Kind of package: tube
Max. load current: 8A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.5V
Max. forward impulse current: 24A
Kind of package: tube
Max. load current: 8A
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 3.4 EUR |
| NXPLQSC30650W6Q |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 30A
Max. forward impulse current: 50A
Kind of package: tube
Max. forward voltage: 1.95V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 30A
Max. forward impulse current: 50A
Kind of package: tube
Max. forward voltage: 1.95V
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| 5.0SMDJ78CAJ |
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Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 39.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 39.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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| BT151U-500C,127 |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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| BTA410Y-600BT,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
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| BTA206-800CT,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
auf Bestellung 954 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 114+ | 0.75 EUR |
| 142+ | 0.61 EUR |
| 172+ | 0.5 EUR |
| 185+ | 0.46 EUR |
| 500+ | 0.44 EUR |
| BTA206X-800ET,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 984 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 68+ | 1.26 EUR |
| 90+ | 0.95 EUR |
| 107+ | 0.8 EUR |
| 121+ | 0.7 EUR |
| 137+ | 0.62 EUR |
| 500+ | 0.5 EUR |
| BTA206-800ET,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 10mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 10mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
auf Bestellung 949 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 77+ | 1.11 EUR |
| 129+ | 0.67 EUR |
| 162+ | 0.52 EUR |
| 180+ | 0.48 EUR |
| 500+ | 0.44 EUR |
| BTA202X-600D,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 2A; TO220FP; Igt: 5mA; Ifsm: 14A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 2A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 14A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 2A; TO220FP; Igt: 5mA; Ifsm: 14A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 2A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 14A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 632 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 193+ | 0.44 EUR |
| 240+ | 0.36 EUR |
| 266+ | 0.32 EUR |
| 500+ | 0.29 EUR |
| BT138X-800 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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| BUJD203A,127 |
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Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 425V; 4A; 80W; TO220AB
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 11...22
Collector-emitter voltage: 425V
Power dissipation: 80W
Polarisation: bipolar
Case: TO220AB
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 425V; 4A; 80W; TO220AB
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 11...22
Collector-emitter voltage: 425V
Power dissipation: 80W
Polarisation: bipolar
Case: TO220AB
Mounting: THT
Produkt ist nicht verfügbar
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| P6SMBJ28CAJ |
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Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.33...34.16V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.33...34.16V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| BTA425Z-800CTQ |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 4.12 EUR |
| 28+ | 3.05 EUR |
| 33+ | 2.64 EUR |
| 150+ | 2.21 EUR |
| BTA201-800ER,412 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Case: TO92
Mounting: THT
Kind of package: bulk
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Gate current: 10mA
Max. load current: 1A
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Case: TO92
Mounting: THT
Kind of package: bulk
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Gate current: 10mA
Max. load current: 1A
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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| MAC223A6,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 25A
Case: TO220AB
Gate current: 50/75mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Technology: 4Q
Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 25A
Case: TO220AB
Gate current: 50/75mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Technology: 4Q
auf Bestellung 764 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 2.98 EUR |
| 53+ | 1.63 EUR |
| 57+ | 1.51 EUR |
| 59+ | 1.45 EUR |
| 100+ | 1.34 EUR |
| 250+ | 1.24 EUR |
| 500+ | 1.15 EUR |
| BT139-800.127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 155A
Technology: 4Q
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 155A
Technology: 4Q
Produkt ist nicht verfügbar
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| BYC30W-600PQ |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 2.7 EUR |
| 44+ | 1.98 EUR |
| 49+ | 1.75 EUR |
| BYC30X-600P,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
auf Bestellung 718 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 2.65 EUR |
| 38+ | 2.26 EUR |
| 41+ | 2.07 EUR |
| 47+ | 1.83 EUR |
| 51+ | 1.69 EUR |
| 100+ | 1.54 EUR |
| 250+ | 1.45 EUR |
| BYC30WT-600PQ |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 70ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-3
Max. forward voltage: 1.38V
Reverse recovery time: 70ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 70ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-3
Max. forward voltage: 1.38V
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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| BYC30W-600PT2Q |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 26ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 26ns
Produkt ist nicht verfügbar
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