Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (5541) > Seite 92 nach 93
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BT155K-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1259,TO3P; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Case: SOT1259; TO3P Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA Turn-on time: 2µs |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BT155W-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Case: SOT429; TO247-3 Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA Turn-on time: 2µs |
auf Bestellung 344 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BT155Z-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Case: SOT1292; TOP3I Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA Turn-on time: 2µs |
auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BT155W-1200T-AQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 3mA Case: SOT429; TO247-3 Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA Turn-on time: 2µs Application: automotive industry |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BT158W-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 126A Load current: 80A Gate current: 70mA Case: SOT429; TO247-3 Mounting: THT Kind of package: tube Max. forward impulse current: 1.1kA Turn-on time: 2µs |
auf Bestellung 208 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BT150S-600R,118 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 4A Load current: 2.5A Gate current: 15µA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 35A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WNSC2D201200CW6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.65V Max. load current: 20A Max. forward impulse current: 80A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
WNS30H100CBJ | WeEn Semiconductors |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 15A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.67V Max. load current: 30A Max. forward impulse current: 330A Kind of package: reel; tape |
auf Bestellung 168 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
WNS30H100CQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.67V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.67V Max. load current: 30A Max. forward impulse current: 330A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
PHE13005,127 | WeEn Semiconductors |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB Mounting: THT Type of transistor: NPN Case: TO220AB Power dissipation: 75W Collector current: 4A Current gain: 10...40 Collector-emitter voltage: 400V Kind of package: tube Polarisation: bipolar |
auf Bestellung 1128 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BT148-400R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 400V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube Mounting: THT Case: SIP3; SOT82 Type of thyristor: thyristor Turn-on time: 2µs Gate current: 15µA Load current: 2.5A Max. load current: 4A Max. forward impulse current: 35A Max. off-state voltage: 0.4kV Kind of package: tube |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BT148-500R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube Mounting: THT Case: SIP3; SOT82 Type of thyristor: thyristor Turn-on time: 2µs Gate current: 15µA Load current: 2.5A Max. load current: 4A Max. forward impulse current: 35A Max. off-state voltage: 500V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
BT138-800.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 35/70mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 95A Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
NXPSC206506Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. forward impulse current: 100A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
NXPSC20650W-AQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 2.1V Max. forward impulse current: 50A Kind of package: tube Max. load current: 20A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
NXPSC20650W6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: tube Max. load current: 20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WNSC6D20650B6J | WeEn Semiconductors |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.8V Max. forward impulse current: 120A Kind of package: reel; tape Max. load current: 40A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
NXPLQSC20650W6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.85V Max. forward impulse current: 48A Kind of package: tube Max. load current: 20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
WNSC2D20650CJQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: SOT1293; TO3PF Max. forward voltage: 1.8V Max. forward impulse current: 50A Kind of package: tube Max. load current: 20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
WNSC2D20650CWQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. forward impulse current: 50A Kind of package: tube Max. load current: 20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
WNSC6D20650WQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.4V Max. forward impulse current: 155A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
ACT102H-600D,118 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.2A; Igt: 5mA; SO8; SMD Type of thyristor: AC switch Max. load current: 0.2A Case: SO8 Mounting: SMD Kind of package: reel; tape Gate current: 5mA Features of semiconductor devices: internally triggered Max. off-state voltage: 0.6kV |
auf Bestellung 1257 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BTA2008-800E,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Case: TO92 Type of thyristor: triac Gate current: 10mA Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BTA2008-1000D,126 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9.9A; 3Q,Hi-Com Features of semiconductor devices: logic level; sensitive gate Mounting: THT Case: TO92 Type of thyristor: triac Gate current: 5mA Max. load current: 0.8A Max. forward impulse current: 9.9A Max. off-state voltage: 1kV Technology: 3Q; Hi-Com Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BTA2008-1000DNML | WeEn Semiconductors |
Category: TriacsDescription: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com Features of semiconductor devices: logic level; sensitive gate Mounting: THT Case: TO92 Type of thyristor: triac Gate current: 5mA Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 1kV Technology: 3Q; Hi-Com Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BTA2008-600D,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Case: TO92 Type of thyristor: triac Gate current: 5mA Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.6kV Technology: 3Q; Hi-Com Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
BTA2008-600E,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Case: TO92 Type of thyristor: triac Gate current: 10mA Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.6kV Technology: 3Q; Hi-Com Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BTA2008-800D,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Case: TO92 Type of thyristor: triac Gate current: 5mA Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.6kV Technology: 3Q; Hi-Com Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BT137X-600/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
BTA425Z-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com Case: SOT1292; TO3P Mounting: THT Type of thyristor: triac Gate current: 50mA Features of semiconductor devices: high temperature; sensitive gate Max. load current: 25A Max. forward impulse current: 250A Kind of package: tube Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
auf Bestellung 530 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BTA425Y-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com Case: TO220AB Mounting: THT Type of thyristor: triac Gate current: 50mA Features of semiconductor devices: high temperature; sensitive gate Max. load current: 25A Max. forward impulse current: 250A Kind of package: tube Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
auf Bestellung 913 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BTA425X-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com Mounting: THT Features of semiconductor devices: sensitive gate Case: TO220FP Type of thyristor: triac Kind of package: tube Gate current: 50mA Max. load current: 25A Max. forward impulse current: 250A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
auf Bestellung 377 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BTA420X-800BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220FP; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com Mounting: THT Case: TO220FP Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Gate current: 50mA Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
auf Bestellung 336 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| BT300S-600R,118 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 2mA; DPAK; SMD; reel,tape; 2us Gate current: 2mA Type of thyristor: thyristor Mounting: SMD Kind of package: reel; tape Case: DPAK Load current: 5A Max. load current: 8A Max. forward impulse current: 65A Turn-on time: 2µs Max. off-state voltage: 0.6kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
BYC10-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 65A Case: SOD59; TO220AC Max. forward voltage: 1.4V Reverse recovery time: 19ns |
auf Bestellung 237 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BTA420-800CT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com Mounting: THT Case: TO220AB Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Gate current: 35mA Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
BTA420X-800CT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com Mounting: THT Case: TO220FP Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Gate current: 35mA Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BTA420-800BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com Mounting: THT Case: TO220AB Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Gate current: 50mA Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BTA420X-800CT/L02Q | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com Mounting: THT Case: TO220FP Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Gate current: 35mA Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BTA420Y-800BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com Mounting: THT Case: TO220AB Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Gate current: 50mA Max. load current: 20A Max. forward impulse current: 220A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
BTA420Y-800CT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com Mounting: THT Case: TO220AB Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Gate current: 35mA Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
BT137-800.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 35/70mA Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Max. forward impulse current: 65A Technology: 4Q |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
MURS360BJ | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.88V Max. forward impulse current: 100A Kind of package: reel; tape |
auf Bestellung 2659 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BT137X-800.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220FP Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WSJM65R099DQ | WeEn Semiconductors |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 128A Power dissipation: 240W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WSJM65R099DTLJ | WeEn Semiconductors |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 100A Power dissipation: 147W Case: TOLL Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
BTA316X-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Type of thyristor: triac Gate current: 10mA Max. load current: 16A Max. forward impulse current: 140A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BTA316B-800E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Case: D2PAK Mounting: SMD Kind of package: reel; tape Type of thyristor: triac Gate current: 10mA Max. load current: 16A Max. forward impulse current: 140A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
auf Bestellung 797 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BTA316B-600E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Case: D2PAK Mounting: SMD Kind of package: reel; tape Type of thyristor: triac Gate current: 10mA Max. load current: 16A Max. forward impulse current: 140A Max. off-state voltage: 0.6kV Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
auf Bestellung 741 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BTA316-600C,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Type of thyristor: triac Gate current: 35mA Max. load current: 16A Max. forward impulse current: 140A Max. off-state voltage: 0.6kV Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
auf Bestellung 81 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BTA316-600BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Type of thyristor: triac Gate current: 50mA Max. load current: 16A Max. forward impulse current: 140A Max. off-state voltage: 0.6kV Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
BTA316-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Type of thyristor: triac Gate current: 10mA Max. load current: 16A Max. forward impulse current: 140A Max. off-state voltage: 0.6kV Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
BTA316X-800C,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Type of thyristor: triac Gate current: 35mA Max. load current: 16A Max. forward impulse current: 140A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BTA316-800CTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Type of thyristor: triac Gate current: 35mA Max. load current: 16A Max. forward impulse current: 150A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BTA316-600ET/DGQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Type of thyristor: triac Gate current: 10mA Max. load current: 16A Max. forward impulse current: 140A Max. off-state voltage: 0.6kV Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
BT136-600E | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 10/25mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 25A Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
ACTT4S-800E,118 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 4A Gate current: 10mA Case: DPAK Mounting: SMD Kind of package: reel; tape |
auf Bestellung 2087 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
ACTT2S-800E,118 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 2A Gate current: 10mA Case: DPAK Mounting: SMD Kind of package: reel; tape |
auf Bestellung 2180 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| SMCJ58AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58V Breakdown voltage: 65...70.6V Max. forward impulse current: 16.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
WNSC16650CWQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Case: TO247-3 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. forward voltage: 1.7V Load current: 8A x2 Max. load current: 16A Max. forward impulse current: 48A Max. off-state voltage: 650V Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BT155K-1200TQ |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1259,TO3P; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1259; TO3P
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1259,TO3P; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1259; TO3P
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.7 EUR |
| 31+ | 2.37 EUR |
| 34+ | 2.14 EUR |
| 120+ | 2 EUR |
| BT155W-1200TQ |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
auf Bestellung 344 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.35 EUR |
| 25+ | 2.97 EUR |
| 30+ | 2.53 EUR |
| 120+ | 2.12 EUR |
| 240+ | 2.06 EUR |
| BT155Z-1200TQ |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1292; TOP3I
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1292; TOP3I
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.47 EUR |
| 26+ | 2.83 EUR |
| 27+ | 2.7 EUR |
| 90+ | 2.29 EUR |
| BT155W-1200T-AQ |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 3mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Application: automotive industry
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 3mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Application: automotive industry
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.33 EUR |
| 19+ | 3.79 EUR |
| 25+ | 3.47 EUR |
| BT158W-1200TQ |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 70mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.1kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 70mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.1kA
Turn-on time: 2µs
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 7.02 EUR |
| 16+ | 4.73 EUR |
| 30+ | 4.06 EUR |
| 90+ | 4.02 EUR |
| BT150S-600R,118 |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 35A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 35A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WNSC2D201200CW6Q |
![]() |
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.65V
Max. load current: 20A
Max. forward impulse current: 80A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.65V
Max. load current: 20A
Max. forward impulse current: 80A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WNS30H100CBJ |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 330A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 330A
Kind of package: reel; tape
auf Bestellung 168 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.66 EUR |
| 68+ | 1.06 EUR |
| 102+ | 0.71 EUR |
| WNS30H100CQ |
![]() |
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 330A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 330A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PHE13005,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Mounting: THT
Type of transistor: NPN
Case: TO220AB
Power dissipation: 75W
Collector current: 4A
Current gain: 10...40
Collector-emitter voltage: 400V
Kind of package: tube
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Mounting: THT
Type of transistor: NPN
Case: TO220AB
Power dissipation: 75W
Collector current: 4A
Current gain: 10...40
Collector-emitter voltage: 400V
Kind of package: tube
Polarisation: bipolar
auf Bestellung 1128 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 127+ | 0.56 EUR |
| 180+ | 0.4 EUR |
| 206+ | 0.35 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.25 EUR |
| BT148-400R,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Case: SIP3; SOT82
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 15µA
Load current: 2.5A
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 0.4kV
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Case: SIP3; SOT82
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 15µA
Load current: 2.5A
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 0.4kV
Kind of package: tube
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 128+ | 0.56 EUR |
| 158+ | 0.45 EUR |
| 173+ | 0.41 EUR |
| 500+ | 0.34 EUR |
| BT148-500R,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Case: SIP3; SOT82
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 15µA
Load current: 2.5A
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 500V
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Case: SIP3; SOT82
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 15µA
Load current: 2.5A
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 500V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BT138-800.127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NXPSC206506Q |
![]() |
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NXPSC20650W-AQ |
![]() |
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NXPSC20650W6Q |
![]() |
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WNSC6D20650B6J |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NXPLQSC20650W6Q |
![]() |
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.85V
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.85V
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WNSC2D20650CJQ |
![]() |
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WNSC2D20650CWQ |
![]() |
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WNSC6D20650WQ |
![]() |
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ACT102H-600D,118 |
![]() |
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.2A; Igt: 5mA; SO8; SMD
Type of thyristor: AC switch
Max. load current: 0.2A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Gate current: 5mA
Features of semiconductor devices: internally triggered
Max. off-state voltage: 0.6kV
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.2A; Igt: 5mA; SO8; SMD
Type of thyristor: AC switch
Max. load current: 0.2A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Gate current: 5mA
Features of semiconductor devices: internally triggered
Max. off-state voltage: 0.6kV
auf Bestellung 1257 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 341+ | 0.21 EUR |
| 358+ | 0.2 EUR |
| 374+ | 0.19 EUR |
| BTA2008-800E,412 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 10mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 10mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA2008-1000D,126 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9.9A; 3Q,Hi-Com
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9.9A
Max. off-state voltage: 1kV
Technology: 3Q; Hi-Com
Kind of package: Ammo Pack
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9.9A; 3Q,Hi-Com
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9.9A
Max. off-state voltage: 1kV
Technology: 3Q; Hi-Com
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA2008-1000DNML |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 1kV
Technology: 3Q; Hi-Com
Kind of package: Ammo Pack
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 1kV
Technology: 3Q; Hi-Com
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA2008-600D,412 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA2008-600E,412 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 10mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 10mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA2008-800D,412 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BT137X-600/DG,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA425Z-800BTQ |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Max. load current: 25A
Max. forward impulse current: 250A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Max. load current: 25A
Max. forward impulse current: 250A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.33 EUR |
| 33+ | 2.17 EUR |
| 40+ | 1.79 EUR |
| 150+ | 1.43 EUR |
| BTA425Y-800BTQ |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Max. load current: 25A
Max. forward impulse current: 250A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Max. load current: 25A
Max. forward impulse current: 250A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
auf Bestellung 913 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.25 EUR |
| 53+ | 1.37 EUR |
| 57+ | 1.26 EUR |
| 61+ | 1.19 EUR |
| 100+ | 1.1 EUR |
| 250+ | 1.02 EUR |
| 500+ | 1 EUR |
| BTA425X-800BTQ |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: sensitive gate
Case: TO220FP
Type of thyristor: triac
Kind of package: tube
Gate current: 50mA
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: sensitive gate
Case: TO220FP
Type of thyristor: triac
Kind of package: tube
Gate current: 50mA
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
auf Bestellung 377 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 65+ | 1.1 EUR |
| 74+ | 0.97 EUR |
| 100+ | 0.96 EUR |
| BTA420X-800BT,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
auf Bestellung 336 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.07 EUR |
| 57+ | 1.26 EUR |
| 73+ | 0.99 EUR |
| 100+ | 0.9 EUR |
| BT300S-600R,118 |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 2mA; DPAK; SMD; reel,tape; 2us
Gate current: 2mA
Type of thyristor: thyristor
Mounting: SMD
Kind of package: reel; tape
Case: DPAK
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 65A
Turn-on time: 2µs
Max. off-state voltage: 0.6kV
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 2mA; DPAK; SMD; reel,tape; 2us
Gate current: 2mA
Type of thyristor: thyristor
Mounting: SMD
Kind of package: reel; tape
Case: DPAK
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 65A
Turn-on time: 2µs
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BYC10-600,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 80+ | 0.9 EUR |
| 93+ | 0.77 EUR |
| 103+ | 0.69 EUR |
| 113+ | 0.63 EUR |
| BTA420-800CT,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA420X-800CT,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA420-800BT,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA420X-800CT/L02Q |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA420Y-800BT,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 220A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 220A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA420Y-800CT,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BT137-800.127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MURS360BJ |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.88V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.88V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 2659 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 242+ | 0.3 EUR |
| 325+ | 0.22 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.15 EUR |
| BT137X-800.127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WSJM65R099DQ |
![]() |
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WSJM65R099DTLJ |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 147W
Case: TOLL
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 147W
Case: TOLL
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA316X-800E,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.37 EUR |
| 74+ | 0.97 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.62 EUR |
| BTA316B-800E,118 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
auf Bestellung 797 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 73+ | 0.99 EUR |
| 81+ | 0.89 EUR |
| 91+ | 0.79 EUR |
| 101+ | 0.71 EUR |
| 108+ | 0.66 EUR |
| BTA316B-600E,118 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
auf Bestellung 741 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.12 EUR |
| 80+ | 0.9 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.69 EUR |
| BTA316-600C,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 68+ | 1.06 EUR |
| 76+ | 0.94 EUR |
| BTA316-600BT,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA316-600E,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA316X-800C,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA316-800CTQ |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
Max. forward impulse current: 150A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
Max. forward impulse current: 150A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA316-600ET/DGQ |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BT136-600E |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ACTT4S-800E,118 |
![]() |
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 2087 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 141+ | 0.51 EUR |
| 200+ | 0.36 EUR |
| 250+ | 0.34 EUR |
| ACTT2S-800E,118 |
![]() |
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 2180 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 97+ | 0.74 EUR |
| 137+ | 0.52 EUR |
| 154+ | 0.46 EUR |
| 182+ | 0.39 EUR |
| 250+ | 0.36 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.31 EUR |
| SMCJ58AJ |
![]() |
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WNSC16650CWQ |
![]() |
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.7V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.7V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

















