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DGW25N120CTL DGW25N120CTL Yangjie Technology Description: Transistors - IGBTs - Single TO-
Power - Max: 326 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 200 nC
Test Condition: 600V, 25A, 18Ohm, 15V
Switching Energy: 1.8m (on), 1.4mJ (off)
Td (on/off) @ 25°C: 158ns/331ns
IGBT Type: Trench
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
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1800+6.76 EUR
9000+6.38 EUR
18000+6.01 EUR
36000+5.63 EUR
72000+5.07 EUR
180000+4.69 EUR
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DGW30N65BTH DGW30N65BTH Yangjie Technology Description: Transistors - IGBTs - Single TO-
Gate Charge: 150 nC
Test Condition: 300V, 30A, 33Ohm, 15V
Switching Energy: 870µJ (on), 260µJ (off)
Td (on/off) @ 25°C: 37ns/113ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Reverse Recovery Time (trr): 35 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
Power - Max: 187 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
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9000+4.43 EUR
18000+4.16 EUR
36000+3.9 EUR
72000+3.51 EUR
180000+3.25 EUR
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DGW40N120CTL DGW40N120CTL Yangjie Technology Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 45ns/180ns
Switching Energy: 3.8mJ (on), 1.7mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 428 W
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9000+8.51 EUR
18000+8.01 EUR
36000+7.51 EUR
72000+6.76 EUR
180000+6.26 EUR
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DGW50N65CTL1 DGW50N65CTL1 Yangjie Technology Description: Transistors - IGBTs - Single TO-
Power - Max: 326 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 85 A
Part Status: Active
Gate Charge: 450 nC
Test Condition: 300V, 50A, 10Ohm, 15V
Switching Energy: 1.27mJ (on), 650µJ (off)
Td (on/off) @ 25°C: 55ns/319ns
Supplier Device Package: TO-247AB
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Reverse Recovery Time (trr): 100 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
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9000+7.4 EUR
18000+6.96 EUR
36000+6.53 EUR
72000+5.88 EUR
180000+5.44 EUR
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DGW75N65CTL1 DGW75N65CTL1 Yangjie Technology Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
Supplier Device Package: TO-247AB
Td (on/off) @ 25°C: 75ns/468ns
Switching Energy: 2.5mJ (on), 1.3mJ (off)
Test Condition: 300V, 75A, 10Ohm, 15V
Gate Charge: 580 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
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1800+13.51 EUR
9000+12.76 EUR
18000+12.01 EUR
36000+11.26 EUR
72000+10.13 EUR
180000+9.38 EUR
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DS521-30L2 DS521-30L2 Yangjie Technology Description: Diodes - Rectifiers - Single DFN
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DFN1006-2L
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
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10000+0.042 EUR
50000+0.039 EUR
100000+0.038 EUR
200000+0.036 EUR
400000+0.031 EUR
1000000+0.03 EUR
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DTA113ZCA DTA113ZCA Yangjie Technology Description: SOT-23 PNP 0.2W -0.1A Transisto
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3000+0.038 EUR
15000+0.037 EUR
30000+0.035 EUR
60000+0.032 EUR
120000+0.029 EUR
300000+0.027 EUR
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DTA113ZE DTA113ZE Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
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15000+0.038 EUR
30000+0.037 EUR
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120000+0.031 EUR
300000+0.029 EUR
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DTA113ZUA DTA113ZUA Yangjie Technology Description: SOT-323 PNP 0.2W -0.1A Transist
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30000+0.035 EUR
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300000+0.027 EUR
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DTA114ECA DTA114ECA YANGJIE TECHNOLOGY Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
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DTA114EUA DTA114EUA YANGJIE TECHNOLOGY Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
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DTA114EUA DTA114EUA Yangjie Technology Description: SOT-323 PNP 0.2W -0.1A Transist
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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30000+0.038 EUR
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120000+0.031 EUR
300000+0.03 EUR
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DTA114YCA DTA114YCA YANGJIE TECHNOLOGY Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
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2250+0.037 EUR
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DTA123ECA DTA123ECA Yangjie Technology Description: SOT-23 PNP 0.2W -0.1A Transisto
Resistor - Base (R1): 2.2 kOhms
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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15000+0.039 EUR
30000+0.038 EUR
60000+0.036 EUR
120000+0.031 EUR
300000+0.03 EUR
Mindestbestellmenge: 3000 Stücke
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DTA123ECA DTA123ECA YANGJIE TECHNOLOGY Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Frequency: 250MHz
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2275+0.037 EUR
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DTA123JCA DTA123JCA Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 300000 Stücke:
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3000+0.05 EUR
15000+0.048 EUR
30000+0.044 EUR
60000+0.042 EUR
120000+0.038 EUR
300000+0.036 EUR
Mindestbestellmenge: 3000 Stücke
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DTA123JE DTA123JE Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
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3000+0.044 EUR
15000+0.042 EUR
30000+0.039 EUR
60000+0.038 EUR
120000+0.033 EUR
300000+0.031 EUR
Mindestbestellmenge: 3000 Stücke
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DTA123JUA DTA123JUA Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 300000 Stücke:
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3000+0.05 EUR
15000+0.048 EUR
30000+0.044 EUR
60000+0.042 EUR
120000+0.038 EUR
300000+0.036 EUR
Mindestbestellmenge: 3000 Stücke
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DTA124ECA DTA124ECA Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
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3000+0.05 EUR
15000+0.048 EUR
30000+0.044 EUR
60000+0.042 EUR
120000+0.038 EUR
300000+0.036 EUR
Mindestbestellmenge: 3000 Stücke
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DTA124EUA DTA124EUA YANGJIE TECHNOLOGY Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Power dissipation: 0.2W
Frequency: 250MHz
auf Bestellung 2275 Stücke:
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2050+0.042 EUR
2275+0.037 EUR
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DTA124EUA DTA124EUA Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 22 kOhms
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
auf Bestellung 300000 Stücke:
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3000+0.042 EUR
15000+0.039 EUR
30000+0.038 EUR
60000+0.036 EUR
120000+0.031 EUR
300000+0.03 EUR
Mindestbestellmenge: 3000 Stücke
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DTA143ECA DTA143ECA YANGJIE TECHNOLOGY Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
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1550+0.056 EUR
2775+0.031 EUR
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DTA143ECA DTA143ECA Yangjie Technology Description: SOT-23 PNP 0.2W -0.1A Transisto
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
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3000+0.042 EUR
15000+0.039 EUR
30000+0.038 EUR
60000+0.036 EUR
120000+0.031 EUR
300000+0.03 EUR
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DTA143EE DTA143EE Yangjie Technology Description: SOT-523 PNP 0.15W -0.1A Transis
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
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3000+0.055 EUR
15000+0.05 EUR
30000+0.048 EUR
60000+0.044 EUR
120000+0.039 EUR
300000+0.038 EUR
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DTA143EUA DTA143EUA YANGJIE TECHNOLOGY Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
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2250+0.038 EUR
2525+0.035 EUR
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DTA143EUA DTA143EUA Yangjie Technology Description: SOT-323 PNP 0.2W -0.1A Transist
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
auf Bestellung 300000 Stücke:
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3000+0.042 EUR
15000+0.039 EUR
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DTA143XCA DTA143XCA YANGJIE TECHNOLOGY Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
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DTA143XUA DTA143XUA YANGJIE TECHNOLOGY Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
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DTA143ZCA DTA143ZCA Yangjie Technology Description: SOT-23 PNP 0.2W -0.1A Transisto
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DTA143ZCA DTA143ZCA YANGJIE TECHNOLOGY Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
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DTA143ZUA DTA143ZUA Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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DTA144ECA DTA144ECA Yangjie Technology Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
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DTA144EUA DTA144EUA Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
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DTC113ZCA DTC113ZCA YANGJIE TECHNOLOGY Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
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DTC113ZCA DTC113ZCA Yangjie Technology Description: SOT-23 NPN 0.2W 0.1A Transistor
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
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DTC113ZUA DTC113ZUA Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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DTC114ECA DTC114ECA YANGJIE TECHNOLOGY Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Frequency: 250MHz
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800+0.11 EUR
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DTC114EE DTC114EE Yangjie Technology Description: SOT-523 NPN 0.15W 0.1A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
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DTC114EUA DTC114EUA YANGJIE TECHNOLOGY Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Frequency: 250MHz
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DTC114TCA DTC114TCA Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
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DTC114TUA DTC114TUA Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
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DTC114YE DTC114YE Yangjie Technology ONSMS03906-1.pdf?t.download=true&u=5oefqw Description: SOT-523 NPN 0.15W 0.1A Transist
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
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DTC123JCA DTC123JCA Yangjie Technology DTC123JCA-SOT23.pdf Description: SOT-23 NPN 0.2W 0.1A Transistor
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DTC123JUA DTC123JUA Yangjie Technology Description: SOT-323 NPN 0.2W 0.1A Transisto
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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DTC123YCA DTC123YCA YANGJIE TECHNOLOGY Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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DTC124ECA DTC124ECA Yangjie Technology Description: SOT-23 NPN 0.2W 0.1A Transistor
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DTC124EUA DTC124EUA YANGJIE TECHNOLOGY 5399_DTC124EUA%20SOT-323.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
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DTC143ECA DTC143ECA YANGJIE TECHNOLOGY DTC143ECA%20SOT-23.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
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DTC143EUA DTC143EUA YANGJIE TECHNOLOGY 5399_DTC143EUA%20SOT-323.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
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DTC143TUA DTC143TUA Yangjie Technology Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
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DTC143XCA DTC143XCA Yangjie Technology Description: SOT-23 NPN 0.2W 0.1A Transistor
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DTC143ZUA DTC143ZUA YANGJIE TECHNOLOGY 5399_DTC143ZUA%20SOT-323.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Frequency: 250MHz
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DTC144ECA DTC144ECA Yangjie Technology Description: SOT-23 NPN 0.2W 0.1A Transistor
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DTC144ECA DTC144ECA YANGJIE TECHNOLOGY Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 4975 Stücke:
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1425+0.06 EUR
3000+0.029 EUR
3475+0.025 EUR
3925+0.021 EUR
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DTC144EUA DTC144EUA Yangjie Technology Description: SOT-323 NPN 0.2W 0.1A Transisto
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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DZ23C10 DZ23C10 Yangjie Technology Description: Diodes - Rectifiers - Single SOT
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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DZ23C11 DZ23C11 Yangjie Technology Description: Diodes - Rectifiers - Single SOT
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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DZ23C12 DZ23C12 Yangjie Technology Description: Diodes - Rectifiers - Single SOT
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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DZ23C12Q DZ23C12Q Yangjie Technology Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
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DZ23C15 DZ23C15 Yangjie Technology Description: Diodes - Rectifiers - Single SOT
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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DGW25N120CTL
DGW25N120CTL
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Power - Max: 326 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 200 nC
Test Condition: 600V, 25A, 18Ohm, 15V
Switching Energy: 1.8m (on), 1.4mJ (off)
Td (on/off) @ 25°C: 158ns/331ns
IGBT Type: Trench
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
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1800+6.76 EUR
9000+6.38 EUR
18000+6.01 EUR
36000+5.63 EUR
72000+5.07 EUR
180000+4.69 EUR
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DGW30N65BTH
DGW30N65BTH
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Gate Charge: 150 nC
Test Condition: 300V, 30A, 33Ohm, 15V
Switching Energy: 870µJ (on), 260µJ (off)
Td (on/off) @ 25°C: 37ns/113ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Reverse Recovery Time (trr): 35 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
Power - Max: 187 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
auf Bestellung 180000 Stücke:
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1800+4.69 EUR
9000+4.43 EUR
18000+4.16 EUR
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180000+3.25 EUR
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DGW40N120CTL
DGW40N120CTL
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 45ns/180ns
Switching Energy: 3.8mJ (on), 1.7mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 428 W
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1800+9.01 EUR
9000+8.51 EUR
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180000+6.26 EUR
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DGW50N65CTL1
DGW50N65CTL1
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Power - Max: 326 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 85 A
Part Status: Active
Gate Charge: 450 nC
Test Condition: 300V, 50A, 10Ohm, 15V
Switching Energy: 1.27mJ (on), 650µJ (off)
Td (on/off) @ 25°C: 55ns/319ns
Supplier Device Package: TO-247AB
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Reverse Recovery Time (trr): 100 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
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1800+7.84 EUR
9000+7.4 EUR
18000+6.96 EUR
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180000+5.44 EUR
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DGW75N65CTL1
DGW75N65CTL1
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
Supplier Device Package: TO-247AB
Td (on/off) @ 25°C: 75ns/468ns
Switching Energy: 2.5mJ (on), 1.3mJ (off)
Test Condition: 300V, 75A, 10Ohm, 15V
Gate Charge: 580 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
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1800+13.51 EUR
9000+12.76 EUR
18000+12.01 EUR
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180000+9.38 EUR
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DS521-30L2
DS521-30L2
Hersteller: Yangjie Technology
Description: Diodes - Rectifiers - Single DFN
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DFN1006-2L
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
auf Bestellung 1000000 Stücke:
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10000+0.042 EUR
50000+0.039 EUR
100000+0.038 EUR
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400000+0.031 EUR
1000000+0.03 EUR
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DTA113ZCA
DTA113ZCA
Hersteller: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
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3000+0.038 EUR
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300000+0.027 EUR
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DTA113ZE
DTA113ZE
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
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DTA113ZUA
DTA113ZUA
Hersteller: Yangjie Technology
Description: SOT-323 PNP 0.2W -0.1A Transist
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DTA114ECA
DTA114ECA
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
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DTA114EUA
DTA114EUA
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
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DTA114EUA
DTA114EUA
Hersteller: Yangjie Technology
Description: SOT-323 PNP 0.2W -0.1A Transist
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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DTA114YCA
DTA114YCA
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
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1800+0.048 EUR
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DTA123ECA
DTA123ECA
Hersteller: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Resistor - Base (R1): 2.2 kOhms
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DTA123ECA
DTA123ECA
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Frequency: 250MHz
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DTA123JCA
DTA123JCA
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
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3000+0.05 EUR
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DTA123JE
DTA123JE
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
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3000+0.044 EUR
15000+0.042 EUR
30000+0.039 EUR
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120000+0.033 EUR
300000+0.031 EUR
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DTA123JUA
DTA123JUA
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 300000 Stücke:
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3000+0.05 EUR
15000+0.048 EUR
30000+0.044 EUR
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120000+0.038 EUR
300000+0.036 EUR
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DTA124ECA
DTA124ECA
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.05 EUR
15000+0.048 EUR
30000+0.044 EUR
60000+0.042 EUR
120000+0.038 EUR
300000+0.036 EUR
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DTA124EUA
DTA124EUA
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Power dissipation: 0.2W
Frequency: 250MHz
auf Bestellung 2275 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2050+0.042 EUR
2275+0.037 EUR
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DTA124EUA
DTA124EUA
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 22 kOhms
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
auf Bestellung 300000 Stücke:
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3000+0.042 EUR
15000+0.039 EUR
30000+0.038 EUR
60000+0.036 EUR
120000+0.031 EUR
300000+0.03 EUR
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DTA143ECA
DTA143ECA
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 2775 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1550+0.056 EUR
2775+0.031 EUR
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DTA143ECA
DTA143ECA
Hersteller: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.042 EUR
15000+0.039 EUR
30000+0.038 EUR
60000+0.036 EUR
120000+0.031 EUR
300000+0.03 EUR
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DTA143EE
DTA143EE
Hersteller: Yangjie Technology
Description: SOT-523 PNP 0.15W -0.1A Transis
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.055 EUR
15000+0.05 EUR
30000+0.048 EUR
60000+0.044 EUR
120000+0.039 EUR
300000+0.038 EUR
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DTA143EUA
DTA143EUA
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 2525 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2250+0.038 EUR
2525+0.035 EUR
Mindestbestellmenge: 2250 Stücke
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DTA143EUA
DTA143EUA
Hersteller: Yangjie Technology
Description: SOT-323 PNP 0.2W -0.1A Transist
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.042 EUR
15000+0.039 EUR
30000+0.038 EUR
60000+0.036 EUR
120000+0.031 EUR
300000+0.03 EUR
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DTA143XCA
DTA143XCA
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 2943 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2050+0.042 EUR
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DTA143XUA
DTA143XUA
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2250+0.038 EUR
2450+0.035 EUR
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DTA143ZCA
DTA143ZCA
Hersteller: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.038 EUR
15000+0.036 EUR
30000+0.033 EUR
60000+0.031 EUR
120000+0.027 EUR
300000+0.025 EUR
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DTA143ZCA
DTA143ZCA
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 1525 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1525+0.056 EUR
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DTA143ZUA
DTA143ZUA
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.05 EUR
15000+0.048 EUR
30000+0.044 EUR
60000+0.042 EUR
120000+0.038 EUR
300000+0.036 EUR
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DTA144ECA
DTA144ECA
Hersteller: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.051 EUR
15000+0.048 EUR
30000+0.045 EUR
60000+0.042 EUR
120000+0.037 EUR
300000+0.036 EUR
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DTA144EUA
DTA144EUA
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.048 EUR
15000+0.045 EUR
30000+0.042 EUR
60000+0.039 EUR
120000+0.036 EUR
300000+0.033 EUR
Mindestbestellmenge: 3000 Stücke
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DTC113ZCA
DTC113ZCA
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
375+0.23 EUR
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DTC113ZCA
DTC113ZCA
Hersteller: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.1A Transistor
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.036 EUR
15000+0.033 EUR
30000+0.031 EUR
60000+0.03 EUR
120000+0.027 EUR
300000+0.025 EUR
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DTC113ZUA
DTC113ZUA
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.05 EUR
15000+0.048 EUR
30000+0.044 EUR
60000+0.042 EUR
120000+0.038 EUR
300000+0.036 EUR
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DTC114ECA
DTC114ECA
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Frequency: 250MHz
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
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800+0.11 EUR
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DTC114EE
DTC114EE
Hersteller: Yangjie Technology
Description: SOT-523 NPN 0.15W 0.1A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.048 EUR
15000+0.046 EUR
30000+0.042 EUR
60000+0.039 EUR
120000+0.036 EUR
300000+0.033 EUR
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DTC114EUA
DTC114EUA
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Frequency: 250MHz
auf Bestellung 1250 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1250+0.068 EUR
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DTC114TCA
DTC114TCA
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.05 EUR
15000+0.048 EUR
30000+0.044 EUR
60000+0.042 EUR
120000+0.038 EUR
300000+0.036 EUR
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DTC114TUA
DTC114TUA
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.05 EUR
15000+0.048 EUR
30000+0.044 EUR
60000+0.042 EUR
120000+0.038 EUR
300000+0.036 EUR
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DTC114YE ONSMS03906-1.pdf?t.download=true&u=5oefqw
DTC114YE
Hersteller: Yangjie Technology
Description: SOT-523 NPN 0.15W 0.1A Transist
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.044 EUR
15000+0.042 EUR
30000+0.039 EUR
60000+0.038 EUR
120000+0.033 EUR
300000+0.031 EUR
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DTC123JCA DTC123JCA-SOT23.pdf
DTC123JCA
Hersteller: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.1A Transistor
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.04 EUR
15000+0.038 EUR
30000+0.037 EUR
60000+0.035 EUR
120000+0.03 EUR
300000+0.029 EUR
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DTC123JUA
DTC123JUA
Hersteller: Yangjie Technology
Description: SOT-323 NPN 0.2W 0.1A Transisto
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.042 EUR
15000+0.039 EUR
30000+0.038 EUR
60000+0.036 EUR
120000+0.031 EUR
300000+0.03 EUR
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DTC123YCA
DTC123YCA
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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DTC124ECA
DTC124ECA
Hersteller: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.1A Transistor
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.042 EUR
15000+0.039 EUR
30000+0.038 EUR
60000+0.036 EUR
120000+0.031 EUR
300000+0.03 EUR
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DTC124EUA 5399_DTC124EUA%20SOT-323.PDF
DTC124EUA
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 5575 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1425+0.061 EUR
3000+0.029 EUR
3400+0.025 EUR
3775+0.023 EUR
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DTC143ECA DTC143ECA%20SOT-23.PDF
DTC143ECA
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 47 Stücke:
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47+1.81 EUR
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DTC143EUA 5399_DTC143EUA%20SOT-323.PDF
DTC143EUA
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 425 Stücke:
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AnzahlPrivatkunde
425+0.2 EUR
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DTC143TUA
DTC143TUA
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.05 EUR
15000+0.048 EUR
30000+0.044 EUR
60000+0.042 EUR
120000+0.038 EUR
300000+0.036 EUR
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DTC143XCA
DTC143XCA
Hersteller: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.1A Transistor
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.042 EUR
15000+0.039 EUR
30000+0.038 EUR
60000+0.036 EUR
120000+0.031 EUR
300000+0.03 EUR
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DTC143ZUA 5399_DTC143ZUA%20SOT-323.PDF
DTC143ZUA
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Frequency: 250MHz
auf Bestellung 2450 Stücke:
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1700+0.05 EUR
2450+0.035 EUR
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DTC144ECA
DTC144ECA
Hersteller: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.1A Transistor
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.036 EUR
15000+0.033 EUR
30000+0.031 EUR
60000+0.03 EUR
120000+0.027 EUR
300000+0.025 EUR
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DTC144ECA
DTC144ECA
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 4975 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1425+0.06 EUR
3000+0.029 EUR
3475+0.025 EUR
3925+0.021 EUR
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DTC144EUA
DTC144EUA
Hersteller: Yangjie Technology
Description: SOT-323 NPN 0.2W 0.1A Transisto
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.042 EUR
15000+0.039 EUR
30000+0.038 EUR
60000+0.036 EUR
120000+0.031 EUR
300000+0.03 EUR
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DZ23C10
DZ23C10
Hersteller: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.05 EUR
15000+0.048 EUR
30000+0.044 EUR
60000+0.042 EUR
120000+0.038 EUR
300000+0.036 EUR
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DZ23C11
DZ23C11
Hersteller: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.05 EUR
15000+0.048 EUR
30000+0.044 EUR
60000+0.042 EUR
120000+0.038 EUR
300000+0.036 EUR
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DZ23C12
DZ23C12
Hersteller: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.05 EUR
15000+0.048 EUR
30000+0.044 EUR
60000+0.042 EUR
120000+0.038 EUR
300000+0.036 EUR
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DZ23C12Q
DZ23C12Q
Hersteller: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.096 EUR
15000+0.092 EUR
30000+0.086 EUR
60000+0.082 EUR
120000+0.074 EUR
300000+0.067 EUR
Mindestbestellmenge: 3000 Stücke
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DZ23C15
DZ23C15
Hersteller: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.05 EUR
15000+0.048 EUR
30000+0.044 EUR
60000+0.042 EUR
120000+0.038 EUR
300000+0.036 EUR
Mindestbestellmenge: 3000 Stücke
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