Produkte > YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO.,LTD > Alle Produkte des Herstellers YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO.,LTD (1772) > Seite 29 nach 30
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YJL2301F | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 94mOhm @ 1.5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V |
auf Bestellung 275 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2301F | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 94mOhm @ 1.5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V |
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YJL2301F-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2301F-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2302A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V |
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YJL2302A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V |
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YJL2302A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL2302A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL2302B | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V |
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YJL2302B | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V |
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YJL2302B-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL2302B-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL2304A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL2304A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL2304A-F2-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL2304A-F2-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL2305A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL2305A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL2305B | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.4A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V |
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YJL2305B | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.4A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V |
auf Bestellung 1137 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2305B-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2305B-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL2312A-F2-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL2312A-F2-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL3134KW | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V |
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YJL3134KW | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V |
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YJL3134KW-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL3134KW-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL3400A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V |
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YJL3400A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V |
auf Bestellung 363 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3400A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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auf Bestellung 1536 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3400A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL3401A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V |
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YJL3401A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V |
auf Bestellung 1960 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3401A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL3401A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL3404A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A,, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 15 V |
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YJL3404A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A,, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 15 V |
auf Bestellung 3199 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3404A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3404A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3407A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 49mOhm @ 4.1A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 572 pF @ 15 V |
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YJL3407A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 49mOhm @ 4.1A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 572 pF @ 15 V |
auf Bestellung 1652 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3407A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL3407A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3415A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V |
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YJL3415A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V |
auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3415A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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YJL3415A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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auf Bestellung 2890 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3416A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V |
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YJL3416A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V |
auf Bestellung 748 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3416A-F2-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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Produkt ist nicht verfügbar |
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YJL3416A-F2-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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auf Bestellung 2831 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ1216A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 4.5V Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 72.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2992 pF @ 10 V |
Produkt ist nicht verfügbar |
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YJQ1216A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 4.5V Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 72.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2992 pF @ 10 V |
Produkt ist nicht verfügbar |
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YJQ1216A-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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Produkt ist nicht verfügbar |
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YJQ1216A-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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Produkt ist nicht verfügbar |
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YJQ30N03A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3.3x3.3) Part Status: Active |
Produkt ist nicht verfügbar |
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YJQ30N03A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3.3x3.3) Part Status: Active |
Produkt ist nicht verfügbar |
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YJQ3400A-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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Produkt ist nicht verfügbar |
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YJQ3400A-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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Produkt ist nicht verfügbar |
YJL2301F |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
Description: P-CH MOSFET 20V 2A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.35 EUR |
56+ | 0.32 EUR |
103+ | 0.17 EUR |
YJL2301F |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
Description: P-CH MOSFET 20V 2A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
Produkt ist nicht verfügbar
YJL2301F-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-23-3L
Description: P-CH MOSFET 20V 2A SOT-23-3L
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.089 EUR |
YJL2301F-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-23-3L
Description: P-CH MOSFET 20V 2A SOT-23-3L
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 0.51 EUR |
43+ | 0.42 EUR |
100+ | 0.22 EUR |
500+ | 0.14 EUR |
1000+ | 0.099 EUR |
YJL2302A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 4.3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V
Description: N-CH MOSFET 20V 4.3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V
Produkt ist nicht verfügbar
YJL2302A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 4.3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V
Description: N-CH MOSFET 20V 4.3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V
Produkt ist nicht verfügbar
YJL2302A-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 4.3A SOT-23-3L
Description: N-CH MOSFET 20V 4.3A SOT-23-3L
Produkt ist nicht verfügbar
YJL2302A-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 4.3A SOT-23-3L
Description: N-CH MOSFET 20V 4.3A SOT-23-3L
Produkt ist nicht verfügbar
YJL2302B |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Description: N-CH MOSFET 20V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Produkt ist nicht verfügbar
YJL2302B |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Description: N-CH MOSFET 20V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Produkt ist nicht verfügbar
YJL2302B-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-23-3L
Description: N-CH MOSFET 20V 3A SOT-23-3L
Produkt ist nicht verfügbar
YJL2302B-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-23-3L
Description: N-CH MOSFET 20V 3A SOT-23-3L
Produkt ist nicht verfügbar
YJL2304A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 3.6A SOT-23-3L
Description: N-CH MOSFET 30V 3.6A SOT-23-3L
Produkt ist nicht verfügbar
YJL2304A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 3.6A SOT-23-3L
Description: N-CH MOSFET 30V 3.6A SOT-23-3L
Produkt ist nicht verfügbar
YJL2304A-F2-0100HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 3.6A SOT-23-3L
Description: N-CH MOSFET 30V 3.6A SOT-23-3L
Produkt ist nicht verfügbar
YJL2304A-F2-0100HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 3.6A SOT-23-3L
Description: N-CH MOSFET 30V 3.6A SOT-23-3L
Produkt ist nicht verfügbar
YJL2305A-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 15V 5.6A SOT-23-3L
Description: P-CH MOSFET 15V 5.6A SOT-23-3L
Produkt ist nicht verfügbar
YJL2305A-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 15V 5.6A SOT-23-3L
Description: P-CH MOSFET 15V 5.6A SOT-23-3L
Produkt ist nicht verfügbar
YJL2305B |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 5.4A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Description: P-CH MOSFET 20V 5.4A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Produkt ist nicht verfügbar
YJL2305B |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 5.4A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Description: P-CH MOSFET 20V 5.4A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
auf Bestellung 1137 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 0.55 EUR |
48+ | 0.37 EUR |
100+ | 0.18 EUR |
500+ | 0.15 EUR |
1000+ | 0.1 EUR |
YJL2305B-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 5.4A SOT-23-3L
Description: P-CH MOSFET 20V 5.4A SOT-23-3L
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 0.51 EUR |
43+ | 0.42 EUR |
100+ | 0.22 EUR |
500+ | 0.15 EUR |
1000+ | 0.1 EUR |
YJL2305B-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 5.4A SOT-23-3L
Description: P-CH MOSFET 20V 5.4A SOT-23-3L
Produkt ist nicht verfügbar
YJL2312A-F2-0100HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 6.8A SOT-23-3L
Description: N-CH MOSFET 20V 6.8A SOT-23-3L
Produkt ist nicht verfügbar
YJL2312A-F2-0100HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 6.8A SOT-23-3L
Description: N-CH MOSFET 20V 6.8A SOT-23-3L
Produkt ist nicht verfügbar
YJL3134KW |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 0.75A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V
Description: N-CH MOSFET 20V 0.75A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V
Produkt ist nicht verfügbar
YJL3134KW |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 0.75A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V
Description: N-CH MOSFET 20V 0.75A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V
Produkt ist nicht verfügbar
YJL3134KW-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 0.75A SOT-323
Description: N-CH MOSFET 20V 0.75A SOT-323
Produkt ist nicht verfügbar
YJL3134KW-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 0.75A SOT-323
Description: N-CH MOSFET 20V 0.75A SOT-323
Produkt ist nicht verfügbar
YJL3400A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
Produkt ist nicht verfügbar
YJL3400A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
39+ | 0.46 EUR |
47+ | 0.38 EUR |
100+ | 0.2 EUR |
YJL3400A-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
auf Bestellung 1536 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 0.51 EUR |
43+ | 0.42 EUR |
100+ | 0.22 EUR |
500+ | 0.15 EUR |
1000+ | 0.1 EUR |
YJL3400A-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Produkt ist nicht verfügbar
YJL3401A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 4.4A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Description: P-CH MOSFET 30V 4.4A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Produkt ist nicht verfügbar
YJL3401A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 4.4A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Description: P-CH MOSFET 30V 4.4A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
auf Bestellung 1960 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
38+ | 0.48 EUR |
55+ | 0.32 EUR |
113+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.091 EUR |
YJL3401A-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 4.4A SOT-23-3L
Description: P-CH MOSFET 30V 4.4A SOT-23-3L
Produkt ist nicht verfügbar
YJL3401A-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 4.4A SOT-23-3L
Description: P-CH MOSFET 30V 4.4A SOT-23-3L
Produkt ist nicht verfügbar
YJL3404A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A,, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 15 V
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A,, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 15 V
Produkt ist nicht verfügbar
YJL3404A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A,, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 15 V
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A,, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 15 V
auf Bestellung 3199 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 0.49 EUR |
53+ | 0.34 EUR |
108+ | 0.16 EUR |
500+ | 0.14 EUR |
1000+ | 0.095 EUR |
YJL3404A-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.087 EUR |
YJL3404A-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 0.49 EUR |
44+ | 0.41 EUR |
100+ | 0.22 EUR |
500+ | 0.14 EUR |
1000+ | 0.097 EUR |
YJL3407A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 4.1A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 572 pF @ 15 V
Description: P-CH MOSFET 30V 4.1A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 572 pF @ 15 V
Produkt ist nicht verfügbar
YJL3407A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 4.1A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 572 pF @ 15 V
Description: P-CH MOSFET 30V 4.1A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 572 pF @ 15 V
auf Bestellung 1652 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 0.51 EUR |
50+ | 0.35 EUR |
103+ | 0.17 EUR |
500+ | 0.14 EUR |
1000+ | 0.1 EUR |
YJL3407A-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 4.1A SOT-23-3L
Description: P-CH MOSFET 30V 4.1A SOT-23-3L
Produkt ist nicht verfügbar
YJL3407A-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 4.1A SOT-23-3L
Description: P-CH MOSFET 30V 4.1A SOT-23-3L
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)YJL3415A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 5.6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
Description: P-CH MOSFET 20V 5.6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
Produkt ist nicht verfügbar
YJL3415A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 5.6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
Description: P-CH MOSFET 20V 5.6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.53 EUR |
41+ | 0.44 EUR |
YJL3415A-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 5.6A SOT-23-3L
Description: P-CH MOSFET 20V 5.6A SOT-23-3L
Produkt ist nicht verfügbar
YJL3415A-F2-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 5.6A SOT-23-3L
Description: P-CH MOSFET 20V 5.6A SOT-23-3L
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.83 EUR |
29+ | 0.62 EUR |
100+ | 0.35 EUR |
500+ | 0.23 EUR |
1000+ | 0.18 EUR |
YJL3416A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 7A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Description: N-CH MOSFET 20V 7A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Produkt ist nicht verfügbar
YJL3416A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 7A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Description: N-CH MOSFET 20V 7A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
auf Bestellung 748 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.53 EUR |
41+ | 0.44 EUR |
100+ | 0.23 EUR |
500+ | 0.15 EUR |
YJL3416A-F2-0100HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 7A SOT-23-3L
Description: N-CH MOSFET 20V 7A SOT-23-3L
Produkt ist nicht verfügbar
YJL3416A-F2-0100HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 7A SOT-23-3L
Description: N-CH MOSFET 20V 7A SOT-23-3L
auf Bestellung 2831 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 0.51 EUR |
43+ | 0.42 EUR |
100+ | 0.22 EUR |
500+ | 0.14 EUR |
1000+ | 0.099 EUR |
YJQ1216A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 16A DFN2020-6L-E
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 4.5V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2992 pF @ 10 V
Description: P-CH MOSFET 20V 16A DFN2020-6L-E
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 4.5V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2992 pF @ 10 V
Produkt ist nicht verfügbar
YJQ1216A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 16A DFN2020-6L-E
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 4.5V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2992 pF @ 10 V
Description: P-CH MOSFET 20V 16A DFN2020-6L-E
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 4.5V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2992 pF @ 10 V
Produkt ist nicht verfügbar
YJQ1216A-F1-1100HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 16A DFN2020-6L-E
Description: P-CH MOSFET 20V 16A DFN2020-6L-E
Produkt ist nicht verfügbar
YJQ1216A-F1-1100HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 16A DFN2020-6L-E
Description: P-CH MOSFET 20V 16A DFN2020-6L-E
Produkt ist nicht verfügbar
YJQ30N03A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 30A DFN3333-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (3.3x3.3)
Part Status: Active
Description: N-CH MOSFET 30V 30A DFN3333-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (3.3x3.3)
Part Status: Active
Produkt ist nicht verfügbar
YJQ30N03A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 30A DFN3333-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (3.3x3.3)
Part Status: Active
Description: N-CH MOSFET 30V 30A DFN3333-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (3.3x3.3)
Part Status: Active
Produkt ist nicht verfügbar
YJQ3400A-F1-1100HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 7.7A DFN2020-6L-
Description: N-CH MOSFET 30V 7.7A DFN2020-6L-
Produkt ist nicht verfügbar
YJQ3400A-F1-1100HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 7.7A DFN2020-6L-
Description: N-CH MOSFET 30V 7.7A DFN2020-6L-
Produkt ist nicht verfügbar