Produkte > YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO.,LTD > Alle Produkte des Herstellers YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO.,LTD (1772) > Seite 8 nach 30
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DB105-B1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
 Description: RECT BRIDGE 600V 1A DB |
Produkt ist nicht verfügbar |
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DB106-B1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 1A DB |
Produkt ist nicht verfügbar |
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DB107-B1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 1A DB |
Produkt ist nicht verfügbar |
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DB107S-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 1A DBS |
Produkt ist nicht verfügbar |
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DB107S-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 1A DBS |
Produkt ist nicht verfügbar |
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DB206S | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 2A DBS Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DBS Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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DB206S | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 2A DBS Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DBS Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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DB206S-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 2A DBS |
Produkt ist nicht verfügbar |
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DB206S-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 2A DBS |
Produkt ist nicht verfügbar |
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DBL156S | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 1.5A DBLS |
Produkt ist nicht verfügbar |
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DBL156S | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 1.5A DBLS |
Produkt ist nicht verfügbar |
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DBL156S-F1-3000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 1.5A DBLS |
Produkt ist nicht verfügbar |
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DBL156S-F1-3000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 1.5A DBLS |
Produkt ist nicht verfügbar |
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DBL207S-F1-3000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 2A DBLS |
Produkt ist nicht verfügbar |
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DBL207S-F1-3000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 2A DBLS |
Produkt ist nicht verfügbar |
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DF25NA100 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 25A TSB-5 Packaging: Box Package / Case: 5-ESIP, TSB-5 Mounting Type: Through Hole Diode Type: Three Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TSB-5 Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
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DF25NA100-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 25A TSB-5 |
Produkt ist nicht verfügbar |
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DF25NA160 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1600V 25A TSB-5 Packaging: Box Package / Case: 5-ESIP, TSB-5 Mounting Type: Through Hole Diode Type: Three Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TSB-5 Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
Produkt ist nicht verfügbar |
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DF25NA160-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1600V 25A TSB-5 |
Produkt ist nicht verfügbar |
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DTC114ECA-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: PREBIAS PNP TRANS 0.2W SOT-23- |
Produkt ist nicht verfügbar |
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DTC114ECA-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: PREBIAS PNP TRANS 0.2W SOT-23- |
Produkt ist nicht verfügbar |
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DTC123JCA | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: PREBIAS PNP TRANS 0.2W SOT-23- |
Produkt ist nicht verfügbar |
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DTC123JCA | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: PREBIAS PNP TRANS 0.2W SOT-23- |
Produkt ist nicht verfügbar |
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DTC143ECA | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: PREBIAS PNP TRANS 0.2W SOT-23- |
Produkt ist nicht verfügbar |
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DTC143ECA | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: PREBIAS PNP TRANS 0.2W SOT-23- |
Produkt ist nicht verfügbar |
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DTC143ECA-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: PREBIAS PNP TRANS 0.2W SOT-23- |
Produkt ist nicht verfügbar |
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DTC143ECA-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: PREBIAS PNP TRANS 0.2W SOT-23- |
Produkt ist nicht verfügbar |
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DTC143ZCA | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: TRANS PREBIAS NPN 50V SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
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DTC143ZCA | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: TRANS PREBIAS NPN 50V SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
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DTC143ZCA-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: PREBIAS PNP TRANS 0.2W SOT-23- |
Produkt ist nicht verfügbar |
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DTC143ZCA-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: PREBIAS PNP TRANS 0.2W SOT-23- |
Produkt ist nicht verfügbar |
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E1D | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 200V 1A SOD123FL |
Produkt ist nicht verfügbar |
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E1D | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 200V 1A SOD123FL |
Produkt ist nicht verfügbar |
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E1D-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 200V 1A SOD123FL |
Produkt ist nicht verfügbar |
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E1D-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 200V 1A SOD123FL |
Produkt ist nicht verfügbar |
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E1JF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 600V 1A SMAF Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 1265 Stücke: Lieferzeit 10-14 Tag (e) |
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E1JF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 600V 1A SMAF Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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E1JF-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 600V 1A SMAF |
Produkt ist nicht verfügbar |
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E1JF-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 600V 1A SMAF |
auf Bestellung 2600 Stücke: Lieferzeit 10-14 Tag (e) |
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E1JFS | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 600V 1A SMAF |
Produkt ist nicht verfügbar |
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E1JFS | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 600V 1A SMAF |
Produkt ist nicht verfügbar |
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E2GF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 400V 2A SMAF Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 16pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |
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E2GF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 400V 2A SMAF Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 16pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |
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E2JF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 600V 2A SMAF Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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E2JF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 600V 2A SMAF Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 940 Stücke: Lieferzeit 10-14 Tag (e) |
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E2JF-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 600V 2A SMAF |
auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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E2JF-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 600V 2A SMAF |
Produkt ist nicht verfügbar |
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ES1B-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 100V 1A DO214AC |
Produkt ist nicht verfügbar |
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ES1B-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 100V 1A DO214AC |
Produkt ist nicht verfügbar |
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ES1D-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 200V 1A DO214AC |
Produkt ist nicht verfügbar |
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ES1D-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 200V 1A DO214AC |
Produkt ist nicht verfügbar |
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ES1J-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 600V 1A DO214AC |
Produkt ist nicht verfügbar |
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ES1J-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 600V 1A DO214AC |
auf Bestellung 4888 Stücke: Lieferzeit 10-14 Tag (e) |
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ES1K | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 800V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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ES1K | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 800V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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ES1K-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 800V 1A DO214AC |
Produkt ist nicht verfügbar |
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ES1K-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 800V 1A DO214AC |
Produkt ist nicht verfügbar |
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ES2DA-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 200V 2A DO214AC |
Produkt ist nicht verfügbar |
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ES2DA-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 200V 2A DO214AC |
Produkt ist nicht verfügbar |
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ES2D-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 200V 2A DO214AC |
Produkt ist nicht verfügbar |
| DB105-B1-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 1A DB
Description: RECT BRIDGE 600V 1A DB
Produkt ist nicht verfügbar
| DB106-B1-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 1A DB
Description: RECT BRIDGE 800V 1A DB
Produkt ist nicht verfügbar
| DB107-B1-1100HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 1A DB
Description: RECT BRIDGE 1000V 1A DB
Produkt ist nicht verfügbar
| DB107S-F1-1100HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 1A DBS
Description: RECT BRIDGE 1000V 1A DBS
Produkt ist nicht verfügbar
| DB107S-F1-1100HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 1A DBS
Description: RECT BRIDGE 1000V 1A DBS
Produkt ist nicht verfügbar
| DB206S |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 2A DBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBS
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: RECT BRIDGE 800V 2A DBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBS
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
| DB206S |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 2A DBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBS
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: RECT BRIDGE 800V 2A DBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBS
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
| DB206S-F1-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 2A DBS
Description: RECT BRIDGE 800V 2A DBS
Produkt ist nicht verfügbar
| DB206S-F1-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 2A DBS
Description: RECT BRIDGE 800V 2A DBS
Produkt ist nicht verfügbar
| DBL156S |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 1.5A DBLS
Description: RECT BRIDGE 800V 1.5A DBLS
Produkt ist nicht verfügbar
| DBL156S |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 1.5A DBLS
Description: RECT BRIDGE 800V 1.5A DBLS
Produkt ist nicht verfügbar
| DBL156S-F1-3000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 1.5A DBLS
Description: RECT BRIDGE 800V 1.5A DBLS
Produkt ist nicht verfügbar
| DBL156S-F1-3000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 1.5A DBLS
Description: RECT BRIDGE 800V 1.5A DBLS
Produkt ist nicht verfügbar
| DBL207S-F1-3000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 2A DBLS
Description: RECT BRIDGE 1000V 2A DBLS
Produkt ist nicht verfügbar
| DBL207S-F1-3000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 2A DBLS
Description: RECT BRIDGE 1000V 2A DBLS
Produkt ist nicht verfügbar
| DF25NA100 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 25A TSB-5
Packaging: Box
Package / Case: 5-ESIP, TSB-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TSB-5
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: RECT BRIDGE 1000V 25A TSB-5
Packaging: Box
Package / Case: 5-ESIP, TSB-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TSB-5
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
| DF25NA100-A1-0000 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 25A TSB-5
Description: RECT BRIDGE 1000V 25A TSB-5
Produkt ist nicht verfügbar
| DF25NA160 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1600V 25A TSB-5
Packaging: Box
Package / Case: 5-ESIP, TSB-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TSB-5
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: RECT BRIDGE 1600V 25A TSB-5
Packaging: Box
Package / Case: 5-ESIP, TSB-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TSB-5
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Produkt ist nicht verfügbar
| DF25NA160-A1-0000 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1600V 25A TSB-5
Description: RECT BRIDGE 1600V 25A TSB-5
Produkt ist nicht verfügbar
| DTC114ECA-F2-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Produkt ist nicht verfügbar
| DTC114ECA-F2-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Produkt ist nicht verfügbar
| DTC123JCA |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Produkt ist nicht verfügbar
| DTC123JCA |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Produkt ist nicht verfügbar
| DTC143ECA |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Produkt ist nicht verfügbar
| DTC143ECA |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Produkt ist nicht verfügbar
| DTC143ECA-F2-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Produkt ist nicht verfügbar
| DTC143ECA-F2-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Produkt ist nicht verfügbar
| DTC143ZCA |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: TRANS PREBIAS NPN 50V SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
| DTC143ZCA |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: TRANS PREBIAS NPN 50V SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
| DTC143ZCA-F2-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Produkt ist nicht verfügbar
| DTC143ZCA-F2-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Description: PREBIAS PNP TRANS 0.2W SOT-23-
Produkt ist nicht verfügbar
| E1D |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 1A SOD123FL
Description: DIODE GEN PURP 200V 1A SOD123FL
Produkt ist nicht verfügbar
| E1D |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 1A SOD123FL
Description: DIODE GEN PURP 200V 1A SOD123FL
Produkt ist nicht verfügbar
| E1D-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 1A SOD123FL
Description: DIODE GEN PURP 200V 1A SOD123FL
Produkt ist nicht verfügbar
| E1D-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 1A SOD123FL
Description: DIODE GEN PURP 200V 1A SOD123FL
Produkt ist nicht verfügbar
| E1JF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 1A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1265 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 63+ | 0.28 EUR |
| 68+ | 0.26 EUR |
| 124+ | 0.14 EUR |
| 500+ | 0.088 EUR |
| 1000+ | 0.06 EUR |
| E1JF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 1A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| E1JF-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 1A SMAF
Description: DIODE GEN PURP 600V 1A SMAF
Produkt ist nicht verfügbar
| E1JF-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 1A SMAF
Description: DIODE GEN PURP 600V 1A SMAF
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 36+ | 0.49 EUR |
| 44+ | 0.4 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.096 EUR |
| E1JFS |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 1A SMAF
Description: DIODE GEN PURP 600V 1A SMAF
Produkt ist nicht verfügbar
| E1JFS |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 1A SMAF
Description: DIODE GEN PURP 600V 1A SMAF
Produkt ist nicht verfügbar
| E2GF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
| E2GF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 2A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 2A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
| E2JF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| E2JF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 2A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 2A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 940 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 46+ | 0.39 EUR |
| 57+ | 0.31 EUR |
| 107+ | 0.17 EUR |
| 500+ | 0.11 EUR |
| E2JF-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 2A SMAF
Description: DIODE GEN PURP 600V 2A SMAF
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 22+ | 0.81 EUR |
| 30+ | 0.6 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.17 EUR |
| E2JF-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 2A SMAF
Description: DIODE GEN PURP 600V 2A SMAF
Produkt ist nicht verfügbar
| ES1B-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 100V 1A DO214AC
Description: DIODE GEN PURP 100V 1A DO214AC
Produkt ist nicht verfügbar
| ES1B-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 100V 1A DO214AC
Description: DIODE GEN PURP 100V 1A DO214AC
Produkt ist nicht verfügbar
| ES1D-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 1A DO214AC
Description: DIODE GEN PURP 200V 1A DO214AC
Produkt ist nicht verfügbar
| ES1D-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 1A DO214AC
Description: DIODE GEN PURP 200V 1A DO214AC
Produkt ist nicht verfügbar
| ES1J-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 1A DO214AC
Description: DIODE GEN PURP 600V 1A DO214AC
Produkt ist nicht verfügbar
| ES1J-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 1A DO214AC
Description: DIODE GEN PURP 600V 1A DO214AC
auf Bestellung 4888 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 22+ | 0.81 EUR |
| 29+ | 0.61 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.17 EUR |
| 2000+ | 0.15 EUR |
| ES1K |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
| ES1K |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
| ES1K-F1-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 1A DO214AC
Description: DIODE GEN PURP 800V 1A DO214AC
Produkt ist nicht verfügbar
| ES1K-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 1A DO214AC
Description: DIODE GEN PURP 800V 1A DO214AC
Produkt ist nicht verfügbar
| ES2DA-F1-0000HF |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 2A DO214AC
Description: DIODE GEN PURP 200V 2A DO214AC
Produkt ist nicht verfügbar
| ES2DA-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 2A DO214AC
Description: DIODE GEN PURP 200V 2A DO214AC
Produkt ist nicht verfügbar
| ES2D-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 2A DO214AC
Description: DIODE GEN PURP 200V 2A DO214AC
Produkt ist nicht verfügbar