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YBSM6010-F1-0000HF YBSM6010-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YBSM60005%20THRU%20YBSM6010.pdf Description: RECT BRIDGE 1000V 6A YBS3
Produkt ist nicht verfügbar
YBSM6010-F1-0000HF YBSM6010-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YBSM60005%20THRU%20YBSM6010.pdf Description: RECT BRIDGE 1000V 6A YBS3
Produkt ist nicht verfügbar
YJB200G06B YJB200G06B Yangzhou Yangjie Electronic Technology Co.,Ltd YJB200G06B.pdf Description: N-CH MOSFET 60V 200A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Part Status: Active
Produkt ist nicht verfügbar
YJB200G06B YJB200G06B Yangzhou Yangjie Electronic Technology Co.,Ltd YJB200G06B.pdf Description: N-CH MOSFET 60V 200A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Part Status: Active
Produkt ist nicht verfügbar
YJD20N06A YJD20N06A Yangzhou Yangjie Electronic Technology Co.,Ltd YJD20N06A.pdf Description: N-CH MOSFET 60V 20A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
Produkt ist nicht verfügbar
YJD20N06A YJD20N06A Yangzhou Yangjie Electronic Technology Co.,Ltd YJD20N06A.pdf Description: N-CH MOSFET 60V 20A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
Produkt ist nicht verfügbar
YJD20N06A-F1-0000HF YJD20N06A-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJD20N06A.pdf Description: N-CH MOSFET 60V 20A TO-252
Produkt ist nicht verfügbar
YJD20N06A-F1-0000HF YJD20N06A-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJD20N06A.pdf Description: N-CH MOSFET 60V 20A TO-252
Produkt ist nicht verfügbar
YJD45G10A-F1-0000HF YJD45G10A-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJD45G10A.pdf Description: N-CH MOSFET 100V 45A TO-252
Produkt ist nicht verfügbar
YJD45G10A-F1-0000HF YJD45G10A-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJD45G10A.pdf Description: N-CH MOSFET 100V 45A TO-252
Produkt ist nicht verfügbar
YJD80G06A-F1-0000 YJD80G06A-F1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd YJD80G06A.pdf Description: N-CH MOSFET 60V 80A TO-252
Produkt ist nicht verfügbar
YJD80G06A-F1-0000 YJD80G06A-F1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd YJD80G06A.pdf Description: N-CH MOSFET 60V 80A TO-252
Produkt ist nicht verfügbar
YJG15N15B-F1-0100HF YJG15N15B-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG15N15B_DS.pdf Description: N-CH MOSFET 150V 15A PDFN5060-8L
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YJG15N15B-F1-0100HF YJG15N15B-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG15N15B_DS.pdf Description: N-CH MOSFET 150V 15A PDFN5060-8L
Produkt ist nicht verfügbar
YJG30N06A YJG30N06A Yangzhou Yangjie Electronic Technology Co.,Ltd YJG30N06A.pdf Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V
Produkt ist nicht verfügbar
YJG30N06A YJG30N06A Yangzhou Yangjie Electronic Technology Co.,Ltd YJG30N06A.pdf Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V
Produkt ist nicht verfügbar
YJG30N06A-F1-0100HF YJG30N06A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG30N06A.pdf Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Produkt ist nicht verfügbar
YJG30N06A-F1-0100HF YJG30N06A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG30N06A.pdf Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Produkt ist nicht verfügbar
YJG50N03A YJG50N03A Yangzhou Yangjie Electronic Technology Co.,Ltd YJG50N03A.pdf Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
Produkt ist nicht verfügbar
YJG50N03A YJG50N03A Yangzhou Yangjie Electronic Technology Co.,Ltd YJG50N03A.pdf Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
Produkt ist nicht verfügbar
YJG50N03A-F1-0100HF YJG50N03A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG50N03A.pdf Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Produkt ist nicht verfügbar
YJG50N03A-F1-0100HF YJG50N03A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG50N03A.pdf Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Produkt ist nicht verfügbar
YJG53G06A-F1-0100HF YJG53G06A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG53G06A.pdf Description: N-CH MOSFET 60V 53A PDFN5060-8L-
Produkt ist nicht verfügbar
YJG53G06A-F1-0100HF YJG53G06A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG53G06A.pdf Description: N-CH MOSFET 60V 53A PDFN5060-8L-
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YJG60G10A-F1-0100HF YJG60G10A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG60G10A.pdf Description: N-CH MOSFET 100V 60A PDFN5060-8L
Produkt ist nicht verfügbar
YJG60G10A-F1-0100HF YJG60G10A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG60G10A.pdf Description: N-CH MOSFET 100V 60A PDFN5060-8L
Produkt ist nicht verfügbar
YJG95G06A-F1-0100HF YJG95G06A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG95G06A.pdf Description: N-CH MOSFET 60V 95A PDFN5060-8L-
Produkt ist nicht verfügbar
YJG95G06A-F1-0100HF YJG95G06A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG95G06A.pdf Description: N-CH MOSFET 60V 95A PDFN5060-8L-
Produkt ist nicht verfügbar
YJJ09N03A YJJ09N03A Yangzhou Yangjie Electronic Technology Co.,Ltd YJJ09N03A.pdf Description: N-CH MOSFET 30V 9A SOT-23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
Produkt ist nicht verfügbar
YJJ09N03A YJJ09N03A Yangzhou Yangjie Electronic Technology Co.,Ltd YJJ09N03A.pdf Description: N-CH MOSFET 30V 9A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
Produkt ist nicht verfügbar
YJJ09N03A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJJ09N03A.pdf Description: N-CH MOSFET 30V 9A SOT-23-6L
Produkt ist nicht verfügbar
YJJ09N03A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJJ09N03A.pdf Description: N-CH MOSFET 30V 9A SOT-23-6L
Produkt ist nicht verfügbar
YJL02N10A YJL02N10A Yangzhou Yangjie Electronic Technology Co.,Ltd YJL02N10A.pdf Description: N-CH MOSFET 100V 2A SOT-23-3L
Produkt ist nicht verfügbar
YJL02N10A YJL02N10A Yangzhou Yangjie Electronic Technology Co.,Ltd YJL02N10A.pdf Description: N-CH MOSFET 100V 2A SOT-23-3L
Produkt ist nicht verfügbar
YJL02N10A-F2-0000HF YJL02N10A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL02N10A.pdf Description: N-CH MOSFET 100V 2A SOT-23-3L
Produkt ist nicht verfügbar
YJL02N10A-F2-0000HF YJL02N10A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL02N10A.pdf Description: N-CH MOSFET 100V 2A SOT-23-3L
Produkt ist nicht verfügbar
YJL03G10A-F2-0000HF YJL03G10A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03G10A.pdf Description: N-CH MOSFET 100V 3A SOT-23-3L
Produkt ist nicht verfügbar
YJL03G10A-F2-0000HF YJL03G10A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03G10A.pdf Description: N-CH MOSFET 100V 3A SOT-23-3L
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YJL03N06A YJL03N06A Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03N06A.pdf Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 30 V
auf Bestellung 858 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
45+ 0.4 EUR
100+ 0.21 EUR
500+ 0.14 EUR
Mindestbestellmenge: 36
YJL03N06A YJL03N06A Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03N06A.pdf Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 30 V
Produkt ist nicht verfügbar
YJL03N06A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03N06A.pdf Description: N-CH MOSFET 60V 3A SOT-23-3L
Produkt ist nicht verfügbar
YJL03N06A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03N06A.pdf Description: N-CH MOSFET 60V 3A SOT-23-3L
auf Bestellung 720 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
29+ 0.62 EUR
100+ 0.35 EUR
500+ 0.23 EUR
Mindestbestellmenge: 22
YJL03N06B YJL03N06B Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03N06B.pdf Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 451 pF @ 30 V
Produkt ist nicht verfügbar
YJL03N06B YJL03N06B Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03N06B.pdf Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 451 pF @ 30 V
Produkt ist nicht verfügbar
YJL03N06B-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03N06B.pdf Description: N-CH MOSFET 60V 3A SOT-23-3L
Produkt ist nicht verfügbar
YJL03N06B-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03N06B.pdf Description: N-CH MOSFET 60V 3A SOT-23-3L
Produkt ist nicht verfügbar
YJL05N04A-F2-0000HF YJL05N04A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL05N04A%20Rev%203.0.pdf Description: N-CH MOSFET 40V 5A SOT-23-3L
Produkt ist nicht verfügbar
YJL05N04A-F2-0000HF YJL05N04A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL05N04A%20Rev%203.0.pdf Description: N-CH MOSFET 40V 5A SOT-23-3L
Produkt ist nicht verfügbar
YJL2101W YJL2101W Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2101W.pdf Description: P-CH MOSFET 20V 2A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
Produkt ist nicht verfügbar
YJL2101W YJL2101W Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2101W.pdf Description: P-CH MOSFET 20V 2A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
Produkt ist nicht verfügbar
YJL2101W-F2-0000HF YJL2101W-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2101W.pdf Description: P-CH MOSFET 20V 2A SOT-323
Produkt ist nicht verfügbar
YJL2101W-F2-0000HF YJL2101W-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2101W.pdf Description: P-CH MOSFET 20V 2A SOT-323
Produkt ist nicht verfügbar
YJL2102W YJL2102W Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2102W.pdf Description: N-CH MOSFET 20V 3A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Produkt ist nicht verfügbar
YJL2102W YJL2102W Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2102W.pdf Description: N-CH MOSFET 20V 3A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Produkt ist nicht verfügbar
YJL2102W-F2-0000HF YJL2102W-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2102W.pdf Description: N-CH MOSFET 20V 3A SOT-323
Produkt ist nicht verfügbar
YJL2102W-F2-0000HF YJL2102W-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2102W.pdf Description: N-CH MOSFET 20V 3A SOT-323
Produkt ist nicht verfügbar
YJL2301C YJL2301C Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2301C%20Rev%203.0.pdf Description: P-CH MOSFET 20V 3.4A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V
Produkt ist nicht verfügbar
YJL2301C YJL2301C Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2301C%20Rev%203.0.pdf Description: P-CH MOSFET 20V 3.4A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
45+ 0.4 EUR
100+ 0.21 EUR
Mindestbestellmenge: 36
YJL2301C-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2301C%20Rev%203.0.pdf Description: P-CH MOSFET 20V 3.4A SOT-23-3L
Produkt ist nicht verfügbar
YJL2301C-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2301C%20Rev%203.0.pdf Description: P-CH MOSFET 20V 3.4A SOT-23-3L
auf Bestellung 1292 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
43+ 0.42 EUR
100+ 0.22 EUR
500+ 0.14 EUR
1000+ 0.099 EUR
Mindestbestellmenge: 35
YBSM6010-F1-0000HF YBSM60005%20THRU%20YBSM6010.pdf
YBSM6010-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A YBS3
Produkt ist nicht verfügbar
YBSM6010-F1-0000HF YBSM60005%20THRU%20YBSM6010.pdf
YBSM6010-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A YBS3
Produkt ist nicht verfügbar
YJB200G06B YJB200G06B.pdf
YJB200G06B
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 200A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Part Status: Active
Produkt ist nicht verfügbar
YJB200G06B YJB200G06B.pdf
YJB200G06B
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 200A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Part Status: Active
Produkt ist nicht verfügbar
YJD20N06A YJD20N06A.pdf
YJD20N06A
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 20A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
Produkt ist nicht verfügbar
YJD20N06A YJD20N06A.pdf
YJD20N06A
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 20A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
Produkt ist nicht verfügbar
YJD20N06A-F1-0000HF YJD20N06A.pdf
YJD20N06A-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 20A TO-252
Produkt ist nicht verfügbar
YJD20N06A-F1-0000HF YJD20N06A.pdf
YJD20N06A-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 20A TO-252
Produkt ist nicht verfügbar
YJD45G10A-F1-0000HF YJD45G10A.pdf
YJD45G10A-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 45A TO-252
Produkt ist nicht verfügbar
YJD45G10A-F1-0000HF YJD45G10A.pdf
YJD45G10A-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 45A TO-252
Produkt ist nicht verfügbar
YJD80G06A-F1-0000 YJD80G06A.pdf
YJD80G06A-F1-0000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 80A TO-252
Produkt ist nicht verfügbar
YJD80G06A-F1-0000 YJD80G06A.pdf
YJD80G06A-F1-0000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 80A TO-252
Produkt ist nicht verfügbar
YJG15N15B-F1-0100HF YJG15N15B_DS.pdf
YJG15N15B-F1-0100HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 150V 15A PDFN5060-8L
Produkt ist nicht verfügbar
YJG15N15B-F1-0100HF YJG15N15B_DS.pdf
YJG15N15B-F1-0100HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 150V 15A PDFN5060-8L
Produkt ist nicht verfügbar
YJG30N06A YJG30N06A.pdf
YJG30N06A
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V
Produkt ist nicht verfügbar
YJG30N06A YJG30N06A.pdf
YJG30N06A
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V
Produkt ist nicht verfügbar
YJG30N06A-F1-0100HF YJG30N06A.pdf
YJG30N06A-F1-0100HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Produkt ist nicht verfügbar
YJG30N06A-F1-0100HF YJG30N06A.pdf
YJG30N06A-F1-0100HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Produkt ist nicht verfügbar
YJG50N03A YJG50N03A.pdf
YJG50N03A
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
Produkt ist nicht verfügbar
YJG50N03A YJG50N03A.pdf
YJG50N03A
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
Produkt ist nicht verfügbar
YJG50N03A-F1-0100HF YJG50N03A.pdf
YJG50N03A-F1-0100HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Produkt ist nicht verfügbar
YJG50N03A-F1-0100HF YJG50N03A.pdf
YJG50N03A-F1-0100HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Produkt ist nicht verfügbar
YJG53G06A-F1-0100HF YJG53G06A.pdf
YJG53G06A-F1-0100HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 53A PDFN5060-8L-
Produkt ist nicht verfügbar
YJG53G06A-F1-0100HF YJG53G06A.pdf
YJG53G06A-F1-0100HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 53A PDFN5060-8L-
Produkt ist nicht verfügbar
YJG60G10A-F1-0100HF YJG60G10A.pdf
YJG60G10A-F1-0100HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 60A PDFN5060-8L
Produkt ist nicht verfügbar
YJG60G10A-F1-0100HF YJG60G10A.pdf
YJG60G10A-F1-0100HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 60A PDFN5060-8L
Produkt ist nicht verfügbar
YJG95G06A-F1-0100HF YJG95G06A.pdf
YJG95G06A-F1-0100HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 95A PDFN5060-8L-
Produkt ist nicht verfügbar
YJG95G06A-F1-0100HF YJG95G06A.pdf
YJG95G06A-F1-0100HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 95A PDFN5060-8L-
Produkt ist nicht verfügbar
YJJ09N03A YJJ09N03A.pdf
YJJ09N03A
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 9A SOT-23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
Produkt ist nicht verfügbar
YJJ09N03A YJJ09N03A.pdf
YJJ09N03A
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 9A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
Produkt ist nicht verfügbar
YJJ09N03A-F2-0000HF YJJ09N03A.pdf
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 9A SOT-23-6L
Produkt ist nicht verfügbar
YJJ09N03A-F2-0000HF YJJ09N03A.pdf
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 9A SOT-23-6L
Produkt ist nicht verfügbar
YJL02N10A YJL02N10A.pdf
YJL02N10A
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 2A SOT-23-3L
Produkt ist nicht verfügbar
YJL02N10A YJL02N10A.pdf
YJL02N10A
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 2A SOT-23-3L
Produkt ist nicht verfügbar
YJL02N10A-F2-0000HF YJL02N10A.pdf
YJL02N10A-F2-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 2A SOT-23-3L
Produkt ist nicht verfügbar
YJL02N10A-F2-0000HF YJL02N10A.pdf
YJL02N10A-F2-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 2A SOT-23-3L
Produkt ist nicht verfügbar
YJL03G10A-F2-0000HF YJL03G10A.pdf
YJL03G10A-F2-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 3A SOT-23-3L
Produkt ist nicht verfügbar
YJL03G10A-F2-0000HF YJL03G10A.pdf
YJL03G10A-F2-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 3A SOT-23-3L
Produkt ist nicht verfügbar
YJL03N06A YJL03N06A.pdf
YJL03N06A
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 30 V
auf Bestellung 858 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
36+0.49 EUR
45+ 0.4 EUR
100+ 0.21 EUR
500+ 0.14 EUR
Mindestbestellmenge: 36
YJL03N06A YJL03N06A.pdf
YJL03N06A
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 30 V
Produkt ist nicht verfügbar
YJL03N06A-F2-0000HF YJL03N06A.pdf
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Produkt ist nicht verfügbar
YJL03N06A-F2-0000HF YJL03N06A.pdf
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
auf Bestellung 720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.83 EUR
29+ 0.62 EUR
100+ 0.35 EUR
500+ 0.23 EUR
Mindestbestellmenge: 22
YJL03N06B YJL03N06B.pdf
YJL03N06B
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 451 pF @ 30 V
Produkt ist nicht verfügbar
YJL03N06B YJL03N06B.pdf
YJL03N06B
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 451 pF @ 30 V
Produkt ist nicht verfügbar
YJL03N06B-F2-0000HF YJL03N06B.pdf
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Produkt ist nicht verfügbar
YJL03N06B-F2-0000HF YJL03N06B.pdf
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Produkt ist nicht verfügbar
YJL05N04A-F2-0000HF YJL05N04A%20Rev%203.0.pdf
YJL05N04A-F2-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 40V 5A SOT-23-3L
Produkt ist nicht verfügbar
YJL05N04A-F2-0000HF YJL05N04A%20Rev%203.0.pdf
YJL05N04A-F2-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 40V 5A SOT-23-3L
Produkt ist nicht verfügbar
YJL2101W YJL2101W.pdf
YJL2101W
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
Produkt ist nicht verfügbar
YJL2101W YJL2101W.pdf
YJL2101W
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
Produkt ist nicht verfügbar
YJL2101W-F2-0000HF YJL2101W.pdf
YJL2101W-F2-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-323
Produkt ist nicht verfügbar
YJL2101W-F2-0000HF YJL2101W.pdf
YJL2101W-F2-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-323
Produkt ist nicht verfügbar
YJL2102W YJL2102W.pdf
YJL2102W
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Produkt ist nicht verfügbar
YJL2102W YJL2102W.pdf
YJL2102W
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Produkt ist nicht verfügbar
YJL2102W-F2-0000HF YJL2102W.pdf
YJL2102W-F2-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-323
Produkt ist nicht verfügbar
YJL2102W-F2-0000HF YJL2102W.pdf
YJL2102W-F2-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-323
Produkt ist nicht verfügbar
YJL2301C YJL2301C%20Rev%203.0.pdf
YJL2301C
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 3.4A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V
Produkt ist nicht verfügbar
YJL2301C YJL2301C%20Rev%203.0.pdf
YJL2301C
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 3.4A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
36+0.49 EUR
45+ 0.4 EUR
100+ 0.21 EUR
Mindestbestellmenge: 36
YJL2301C-F2-0000HF YJL2301C%20Rev%203.0.pdf
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 3.4A SOT-23-3L
Produkt ist nicht verfügbar
YJL2301C-F2-0000HF YJL2301C%20Rev%203.0.pdf
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 3.4A SOT-23-3L
auf Bestellung 1292 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
35+0.51 EUR
43+ 0.42 EUR
100+ 0.22 EUR
500+ 0.14 EUR
1000+ 0.099 EUR
Mindestbestellmenge: 35
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