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GR5J-F1-0000 GR5J-F1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GR5A%20THRU%20GR5M.pdf Description: DIODE GEN PURP 600V 5A DO214AB
Produkt ist nicht verfügbar
GR5J-F1-0000 GR5J-F1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GR5A%20THRU%20GR5M.pdf Description: DIODE GEN PURP 600V 5A DO214AB
Produkt ist nicht verfügbar
GS1G-F1-0000HF GS1G-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS1A%20THRU%20GS1M.pdf Description: DIODE GEN PURP 400V 1A DO214AC
Produkt ist nicht verfügbar
GS1G-F1-0000HF GS1G-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS1A%20THRU%20GS1M.pdf Description: DIODE GEN PURP 400V 1A DO214AC
Produkt ist nicht verfügbar
GS1J-F1-0000HF GS1J-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS1A%20THRU%20GS1M.pdf Description: DIODE GEN PURP 600V 1A DO214AC
Produkt ist nicht verfügbar
GS1J-F1-0000HF GS1J-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS1A%20THRU%20GS1M.pdf Description: DIODE GEN PURP 600V 1A DO214AC
Produkt ist nicht verfügbar
GS1K-F1-3000HF GS1K-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS1A%20THRU%20GS1M.pdf Description: DIODE GEN PURP 800V 1A DO214AC
Produkt ist nicht verfügbar
GS1K-F1-3000HF GS1K-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS1A%20THRU%20GS1M.pdf Description: DIODE GEN PURP 800V 1A DO214AC
Produkt ist nicht verfügbar
GS1M-F1-0000HF GS1M-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS1A%20THRU%20GS1M.pdf Description: DIODE GEN PURP 1000V 1A DO214AC
Produkt ist nicht verfügbar
GS1M-F1-0000HF GS1M-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS1A%20THRU%20GS1M.pdf Description: DIODE GEN PURP 1000V 1A DO214AC
auf Bestellung 4935 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
58+ 0.3 EUR
110+ 0.16 EUR
500+ 0.11 EUR
1000+ 0.072 EUR
2000+ 0.065 EUR
Mindestbestellmenge: 48
GS2D-F1-0000HF GS2D-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS2A%20THRU%20GS2M.pdf Description: DIODE GEN PURP 200V 2A DO214AC
Produkt ist nicht verfügbar
GS2D-F1-0000HF GS2D-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS2A%20THRU%20GS2M.pdf Description: DIODE GEN PURP 200V 2A DO214AC
Produkt ist nicht verfügbar
GS2M GS2M Yangzhou Yangjie Electronic Technology Co.,Ltd GS2A%20THRU%20GS2M.pdf Description: DIODE GEN PURP 1KV 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GS2M GS2M Yangzhou Yangjie Electronic Technology Co.,Ltd GS2A%20THRU%20GS2M.pdf Description: DIODE GEN PURP 1KV 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GS2MA GS2MA Yangzhou Yangjie Electronic Technology Co.,Ltd GS2AA%20THRU%20GS2MA.pdf Description: DIODE GEN PURP 1KV 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GS2MA GS2MA Yangzhou Yangjie Electronic Technology Co.,Ltd GS2AA%20THRU%20GS2MA.pdf Description: DIODE GEN PURP 1KV 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
70+ 0.25 EUR
129+ 0.14 EUR
Mindestbestellmenge: 50
GS2MA-F1-0000HF GS2MA-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS2AA%20THRU%20GS2MA.pdf Description: DIODE GEN PURP 1000V 2A DO214AC
Produkt ist nicht verfügbar
GS2MA-F1-0000HF GS2MA-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS2AA%20THRU%20GS2MA.pdf Description: DIODE GEN PURP 1000V 2A DO214AC
auf Bestellung 475 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
41+ 0.43 EUR
100+ 0.25 EUR
Mindestbestellmenge: 31
GS2M-F1-0000HF GS2M-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS2A%20THRU%20GS2M.pdf Description: DIODE GEN PURP 1000V 2A DO214AC
Produkt ist nicht verfügbar
GS2M-F1-0000HF GS2M-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS2A%20THRU%20GS2M.pdf Description: DIODE GEN PURP 1000V 2A DO214AC
Produkt ist nicht verfügbar
GS3G GS3G Yangzhou Yangjie Electronic Technology Co.,Ltd GS3A%20THRU%20GS3M.pdf Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1700 V
Produkt ist nicht verfügbar
GS3G GS3G Yangzhou Yangjie Electronic Technology Co.,Ltd GS3A%20THRU%20GS3M.pdf Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1700 V
Produkt ist nicht verfügbar
GS3GB GS3GB Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 400V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
GS3GB GS3GB Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 400V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
GS3JB GS3JB Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
GS3JB GS3JB Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
GS3JB-F1-3000HF GS3JB-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 600V 3A DO214AA
Produkt ist nicht verfügbar
GS3JB-F1-3000HF GS3JB-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 600V 3A DO214AA
Produkt ist nicht verfügbar
GS3KB GS3KB Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
GS3KB GS3KB Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
GS3KB-F1-3000HF GS3KB-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
GS3KB-F1-3000HF GS3KB-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
GS3M GS3M Yangzhou Yangjie Electronic Technology Co.,Ltd GS3A%20THRU%20GS3M.pdf Description: DIODE GEN PURP 1KV 3A DO214AB
Produkt ist nicht verfügbar
GS3M GS3M Yangzhou Yangjie Electronic Technology Co.,Ltd GS3A%20THRU%20GS3M.pdf Description: DIODE GEN PURP 1KV 3A DO214AB
Produkt ist nicht verfügbar
GS3MB GS3MB Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GS3MB GS3MB Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GS3MB-F1-0000HF GS3MB-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 1000V 3A DO214AA
Produkt ist nicht verfügbar
GS3MB-F1-0000HF GS3MB-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 1000V 3A DO214AA
Produkt ist nicht verfügbar
GS3M-F1-0000 GS3M-F1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GS3A%20THRU%20GS3M.pdf Description: DIODE GEN PURP 1000V 3A DO214AB
Produkt ist nicht verfügbar
GS3M-F1-0000 GS3M-F1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GS3A%20THRU%20GS3M.pdf Description: DIODE GEN PURP 1000V 3A DO214AB
Produkt ist nicht verfügbar
GS5G GS5G Yangzhou Yangjie Electronic Technology Co.,Ltd GS5A%20THRU%20GS5M.pdf Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
GS5G GS5G Yangzhou Yangjie Electronic Technology Co.,Ltd GS5A%20THRU%20GS5M.pdf Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
GS5M GS5M Yangzhou Yangjie Electronic Technology Co.,Ltd GS5A%20THRU%20GS5M.pdf Description: DIODE GEN PURP 1KV 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GS5M GS5M Yangzhou Yangjie Electronic Technology Co.,Ltd GS5A%20THRU%20GS5M.pdf Description: DIODE GEN PURP 1KV 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GS5M-F1-3000HF GS5M-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS5A%20THRU%20GS5M.pdf Description: DIODE GEN PURP 1000V 5A DO214AB
Produkt ist nicht verfügbar
GS5M-F1-3000HF GS5M-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS5A%20THRU%20GS5M.pdf Description: DIODE GEN PURP 1000V 5A DO214AB
Produkt ist nicht verfügbar
H1K H1K Yangzhou Yangjie Electronic Technology Co.,Ltd H1A%20THRU%20H1M.pdf Description: DIODE GEN PURP 800V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
H1K H1K Yangzhou Yangjie Electronic Technology Co.,Ltd H1A%20THRU%20H1M.pdf Description: DIODE GEN PURP 800V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
H1M-F1-0000HF H1M-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd H1A%20THRU%20H1M.pdf Description: DIODE GEN PURP 1000V 1A SOD123FL
Produkt ist nicht verfügbar
H1M-F1-0000HF H1M-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd H1A%20THRU%20H1M.pdf Description: DIODE GEN PURP 1000V 1A SOD123FL
Produkt ist nicht verfügbar
H2GF H2GF Yangzhou Yangjie Electronic Technology Co.,Ltd H2AF%20THRU%20H2MF.pdf Description: DIODE GEN PURP 400V 2A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
H2GF H2GF Yangzhou Yangjie Electronic Technology Co.,Ltd H2AF%20THRU%20H2MF.pdf Description: DIODE GEN PURP 400V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
HDL10S HDL10S Yangzhou Yangjie Electronic Technology Co.,Ltd HDL1S%20THRU%20HDL10S.pdf Description: RECT BRIDGE 1000V 0.8A MBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
HDL10S HDL10S Yangzhou Yangjie Electronic Technology Co.,Ltd HDL1S%20THRU%20HDL10S.pdf Description: RECT BRIDGE 1000V 0.8A MBLS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 3446 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
70+ 0.25 EUR
129+ 0.14 EUR
500+ 0.11 EUR
1000+ 0.075 EUR
2000+ 0.062 EUR
Mindestbestellmenge: 50
HDL10S-F1-0010 HDL10S-F1-0010 Yangzhou Yangjie Electronic Technology Co.,Ltd HDL1S%20THRU%20HDL10S.pdf Description: RECT BRIDGE 1000V 0.8A MBLS
Produkt ist nicht verfügbar
HDL10S-F1-0010 HDL10S-F1-0010 Yangzhou Yangjie Electronic Technology Co.,Ltd HDL1S%20THRU%20HDL10S.pdf Description: RECT BRIDGE 1000V 0.8A MBLS
auf Bestellung 3910 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
35+ 0.51 EUR
100+ 0.27 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 29
HER104G-D1-3000 HER104G-D1-3000 Yangzhou Yangjie Electronic Technology Co.,Ltd HER101G%20THRU%20HER108G.pdf Description: DIODE GEN PURP 300V 1A DO41
Produkt ist nicht verfügbar
HER104G-D1-3000 HER104G-D1-3000 Yangzhou Yangjie Electronic Technology Co.,Ltd HER101G%20THRU%20HER108G.pdf Description: DIODE GEN PURP 300V 1A DO41
Produkt ist nicht verfügbar
HER106G-D1-0000 HER106G-D1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd HER101G%20THRU%20HER108G.pdf Description: DIODE GEN PURP 600V 1A DO41
Produkt ist nicht verfügbar
HER106G-D1-0000 HER106G-D1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd HER101G%20THRU%20HER108G.pdf Description: DIODE GEN PURP 600V 1A DO41
Produkt ist nicht verfügbar
GR5J-F1-0000 GR5A%20THRU%20GR5M.pdf
GR5J-F1-0000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 5A DO214AB
Produkt ist nicht verfügbar
GR5J-F1-0000 GR5A%20THRU%20GR5M.pdf
GR5J-F1-0000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 5A DO214AB
Produkt ist nicht verfügbar
GS1G-F1-0000HF GS1A%20THRU%20GS1M.pdf
GS1G-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 1A DO214AC
Produkt ist nicht verfügbar
GS1G-F1-0000HF GS1A%20THRU%20GS1M.pdf
GS1G-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 1A DO214AC
Produkt ist nicht verfügbar
GS1J-F1-0000HF GS1A%20THRU%20GS1M.pdf
GS1J-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 1A DO214AC
Produkt ist nicht verfügbar
GS1J-F1-0000HF GS1A%20THRU%20GS1M.pdf
GS1J-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 1A DO214AC
Produkt ist nicht verfügbar
GS1K-F1-3000HF GS1A%20THRU%20GS1M.pdf
GS1K-F1-3000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 1A DO214AC
Produkt ist nicht verfügbar
GS1K-F1-3000HF GS1A%20THRU%20GS1M.pdf
GS1K-F1-3000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 1A DO214AC
Produkt ist nicht verfügbar
GS1M-F1-0000HF GS1A%20THRU%20GS1M.pdf
GS1M-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 1A DO214AC
Produkt ist nicht verfügbar
GS1M-F1-0000HF GS1A%20THRU%20GS1M.pdf
GS1M-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 1A DO214AC
auf Bestellung 4935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
48+0.37 EUR
58+ 0.3 EUR
110+ 0.16 EUR
500+ 0.11 EUR
1000+ 0.072 EUR
2000+ 0.065 EUR
Mindestbestellmenge: 48
GS2D-F1-0000HF GS2A%20THRU%20GS2M.pdf
GS2D-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 2A DO214AC
Produkt ist nicht verfügbar
GS2D-F1-0000HF GS2A%20THRU%20GS2M.pdf
GS2D-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 2A DO214AC
Produkt ist nicht verfügbar
GS2M GS2A%20THRU%20GS2M.pdf
GS2M
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GS2M GS2A%20THRU%20GS2M.pdf
GS2M
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GS2MA GS2AA%20THRU%20GS2MA.pdf
GS2MA
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GS2MA GS2AA%20THRU%20GS2MA.pdf
GS2MA
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+0.35 EUR
70+ 0.25 EUR
129+ 0.14 EUR
Mindestbestellmenge: 50
GS2MA-F1-0000HF GS2AA%20THRU%20GS2MA.pdf
GS2MA-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 2A DO214AC
Produkt ist nicht verfügbar
GS2MA-F1-0000HF GS2AA%20THRU%20GS2MA.pdf
GS2MA-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 2A DO214AC
auf Bestellung 475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
41+ 0.43 EUR
100+ 0.25 EUR
Mindestbestellmenge: 31
GS2M-F1-0000HF GS2A%20THRU%20GS2M.pdf
GS2M-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 2A DO214AC
Produkt ist nicht verfügbar
GS2M-F1-0000HF GS2A%20THRU%20GS2M.pdf
GS2M-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 2A DO214AC
Produkt ist nicht verfügbar
GS3G GS3A%20THRU%20GS3M.pdf
GS3G
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1700 V
Produkt ist nicht verfügbar
GS3G GS3A%20THRU%20GS3M.pdf
GS3G
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1700 V
Produkt ist nicht verfügbar
GS3GB GS3AB%20THRU%20GS3MB.pdf
GS3GB
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
GS3GB GS3AB%20THRU%20GS3MB.pdf
GS3GB
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
GS3JB GS3AB%20THRU%20GS3MB.pdf
GS3JB
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
GS3JB GS3AB%20THRU%20GS3MB.pdf
GS3JB
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
GS3JB-F1-3000HF GS3AB%20THRU%20GS3MB.pdf
GS3JB-F1-3000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 3A DO214AA
Produkt ist nicht verfügbar
GS3JB-F1-3000HF GS3AB%20THRU%20GS3MB.pdf
GS3JB-F1-3000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 3A DO214AA
Produkt ist nicht verfügbar
GS3KB GS3AB%20THRU%20GS3MB.pdf
GS3KB
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
GS3KB GS3AB%20THRU%20GS3MB.pdf
GS3KB
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
GS3KB-F1-3000HF GS3AB%20THRU%20GS3MB.pdf
GS3KB-F1-3000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
GS3KB-F1-3000HF GS3AB%20THRU%20GS3MB.pdf
GS3KB-F1-3000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
GS3M GS3A%20THRU%20GS3M.pdf
GS3M
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 3A DO214AB
Produkt ist nicht verfügbar
GS3M GS3A%20THRU%20GS3M.pdf
GS3M
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 3A DO214AB
Produkt ist nicht verfügbar
GS3MB GS3AB%20THRU%20GS3MB.pdf
GS3MB
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GS3MB GS3AB%20THRU%20GS3MB.pdf
GS3MB
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GS3MB-F1-0000HF GS3AB%20THRU%20GS3MB.pdf
GS3MB-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AA
Produkt ist nicht verfügbar
GS3MB-F1-0000HF GS3AB%20THRU%20GS3MB.pdf
GS3MB-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AA
Produkt ist nicht verfügbar
GS3M-F1-0000 GS3A%20THRU%20GS3M.pdf
GS3M-F1-0000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AB
Produkt ist nicht verfügbar
GS3M-F1-0000 GS3A%20THRU%20GS3M.pdf
GS3M-F1-0000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AB
Produkt ist nicht verfügbar
GS5G GS5A%20THRU%20GS5M.pdf
GS5G
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
GS5G GS5A%20THRU%20GS5M.pdf
GS5G
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
GS5M GS5A%20THRU%20GS5M.pdf
GS5M
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GS5M GS5A%20THRU%20GS5M.pdf
GS5M
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GS5M-F1-3000HF GS5A%20THRU%20GS5M.pdf
GS5M-F1-3000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 5A DO214AB
Produkt ist nicht verfügbar
GS5M-F1-3000HF GS5A%20THRU%20GS5M.pdf
GS5M-F1-3000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 5A DO214AB
Produkt ist nicht verfügbar
H1K H1A%20THRU%20H1M.pdf
H1K
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
H1K H1A%20THRU%20H1M.pdf
H1K
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
H1M-F1-0000HF H1A%20THRU%20H1M.pdf
H1M-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 1A SOD123FL
Produkt ist nicht verfügbar
H1M-F1-0000HF H1A%20THRU%20H1M.pdf
H1M-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 1A SOD123FL
Produkt ist nicht verfügbar
H2GF H2AF%20THRU%20H2MF.pdf
H2GF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 2A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
H2GF H2AF%20THRU%20H2MF.pdf
H2GF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
HDL10S HDL1S%20THRU%20HDL10S.pdf
HDL10S
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 0.8A MBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
HDL10S HDL1S%20THRU%20HDL10S.pdf
HDL10S
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 0.8A MBLS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 3446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+0.35 EUR
70+ 0.25 EUR
129+ 0.14 EUR
500+ 0.11 EUR
1000+ 0.075 EUR
2000+ 0.062 EUR
Mindestbestellmenge: 50
HDL10S-F1-0010 HDL1S%20THRU%20HDL10S.pdf
HDL10S-F1-0010
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 0.8A MBLS
Produkt ist nicht verfügbar
HDL10S-F1-0010 HDL1S%20THRU%20HDL10S.pdf
HDL10S-F1-0010
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 0.8A MBLS
auf Bestellung 3910 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
35+ 0.51 EUR
100+ 0.27 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 29
HER104G-D1-3000 HER101G%20THRU%20HER108G.pdf
HER104G-D1-3000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 300V 1A DO41
Produkt ist nicht verfügbar
HER104G-D1-3000 HER101G%20THRU%20HER108G.pdf
HER104G-D1-3000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 300V 1A DO41
Produkt ist nicht verfügbar
HER106G-D1-0000 HER101G%20THRU%20HER108G.pdf
HER106G-D1-0000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 1A DO41
Produkt ist nicht verfügbar
HER106G-D1-0000 HER101G%20THRU%20HER108G.pdf
HER106G-D1-0000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 1A DO41
Produkt ist nicht verfügbar
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