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GS3JB GS3JB Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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GS3JB-F1-3000HF GS3JB-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 600V 3A DO214AA
Produkt ist nicht verfügbar
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GS3JB-F1-3000HF GS3JB-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 600V 3A DO214AA
Produkt ist nicht verfügbar
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GS3KB GS3KB Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
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GS3KB GS3KB Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
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GS3KB-F1-3000HF GS3KB-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
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GS3KB-F1-3000HF GS3KB-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
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GS3MB GS3MB Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GS3MB GS3MB Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GS3MB-F1-0000HF GS3MB-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 1000V 3A DO214AA
Produkt ist nicht verfügbar
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GS3MB-F1-0000HF GS3MB-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS3AB%20THRU%20GS3MB.pdf Description: DIODE GEN PURP 1000V 3A DO214AA
Produkt ist nicht verfügbar
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GS3M-F1-0000 GS3M-F1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GS3A%20THRU%20GS3M.pdf Description: DIODE GEN PURP 1000V 3A DO214AB
Produkt ist nicht verfügbar
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GS3M-F1-0000 GS3M-F1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GS3A%20THRU%20GS3M.pdf Description: DIODE GEN PURP 1000V 3A DO214AB
Produkt ist nicht verfügbar
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GS5G GS5G Yangzhou Yangjie Electronic Technology Co.,Ltd GS5A%20THRU%20GS5M.pdf Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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GS5G GS5G Yangzhou Yangjie Electronic Technology Co.,Ltd GS5A%20THRU%20GS5M.pdf Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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GS5M GS5M Yangzhou Yangjie Electronic Technology Co.,Ltd GS5A%20THRU%20GS5M.pdf Description: DIODE GEN PURP 1KV 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS5M GS5M Yangzhou Yangjie Electronic Technology Co.,Ltd GS5A%20THRU%20GS5M.pdf Description: DIODE GEN PURP 1KV 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GS5M-F1-3000HF GS5M-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS5A%20THRU%20GS5M.pdf Description: DIODE GEN PURP 1000V 5A DO214AB
Produkt ist nicht verfügbar
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GS5M-F1-3000HF GS5M-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS5A%20THRU%20GS5M.pdf Description: DIODE GEN PURP 1000V 5A DO214AB
Produkt ist nicht verfügbar
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H1K H1K Yangzhou Yangjie Electronic Technology Co.,Ltd H1A%20THRU%20H1M.pdf Description: DIODE GEN PURP 800V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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H1K H1K Yangzhou Yangjie Electronic Technology Co.,Ltd H1A%20THRU%20H1M.pdf Description: DIODE GEN PURP 800V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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H1M-F1-0000HF H1M-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd H1A%20THRU%20H1M.pdf Description: DIODE GEN PURP 1000V 1A SOD123FL
Produkt ist nicht verfügbar
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H1M-F1-0000HF H1M-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd H1A%20THRU%20H1M.pdf Description: DIODE GEN PURP 1000V 1A SOD123FL
Produkt ist nicht verfügbar
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H2GF H2GF Yangzhou Yangjie Electronic Technology Co.,Ltd H2AF%20THRU%20H2MF.pdf Description: DIODE GEN PURP 400V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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H2GF H2GF Yangzhou Yangjie Electronic Technology Co.,Ltd H2AF%20THRU%20H2MF.pdf Description: DIODE GEN PURP 400V 2A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HDL10S HDL10S Yangzhou Yangjie Electronic Technology Co.,Ltd HDL1S%20THRU%20HDL10S.pdf Description: RECT BRIDGE 1000V 0.8A MBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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HDL10S HDL10S Yangzhou Yangjie Electronic Technology Co.,Ltd HDL1S%20THRU%20HDL10S.pdf Description: RECT BRIDGE 1000V 0.8A MBLS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 3446 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
70+0.25 EUR
129+0.14 EUR
500+0.11 EUR
1000+0.075 EUR
2000+0.062 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
HDL10S-F1-0010 HDL10S-F1-0010 Yangzhou Yangjie Electronic Technology Co.,Ltd HDL1S%20THRU%20HDL10S.pdf Description: RECT BRIDGE 1000V 0.8A MBLS
Produkt ist nicht verfügbar
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HDL10S-F1-0010 HDL10S-F1-0010 Yangzhou Yangjie Electronic Technology Co.,Ltd HDL1S%20THRU%20HDL10S.pdf Description: RECT BRIDGE 1000V 0.8A MBLS
auf Bestellung 3910 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
35+0.51 EUR
100+0.27 EUR
500+0.18 EUR
1000+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 29
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HER104G-D1-3000 HER104G-D1-3000 Yangzhou Yangjie Electronic Technology Co.,Ltd HER101G%20THRU%20HER108G.pdf Description: DIODE GEN PURP 300V 1A DO41
Produkt ist nicht verfügbar
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HER104G-D1-3000 HER104G-D1-3000 Yangzhou Yangjie Electronic Technology Co.,Ltd HER101G%20THRU%20HER108G.pdf Description: DIODE GEN PURP 300V 1A DO41
Produkt ist nicht verfügbar
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HER106G-D1-0000 HER106G-D1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd HER101G%20THRU%20HER108G.pdf Description: DIODE GEN PURP 600V 1A DO41
Produkt ist nicht verfügbar
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HER106G-D1-0000 HER106G-D1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd HER101G%20THRU%20HER108G.pdf Description: DIODE GEN PURP 600V 1A DO41
Produkt ist nicht verfügbar
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HER208G-D1-0000 HER208G-D1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd HER201G%20THRU%20HER208G.pdf Description: DIODE GEN PURP 1000V 2A DO15
Produkt ist nicht verfügbar
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HER208G-D1-0000 HER208G-D1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd HER201G%20THRU%20HER208G.pdf Description: DIODE GEN PURP 1000V 2A DO15
Produkt ist nicht verfügbar
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HER303G-D1-3000 HER303G-D1-3000 Yangzhou Yangjie Electronic Technology Co.,Ltd HER301G%20THRU%20HER308G.pdf Description: DIODE GEN PURP 200V 3A DO201AD
Produkt ist nicht verfügbar
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HER303G-D1-3000 HER303G-D1-3000 Yangzhou Yangjie Electronic Technology Co.,Ltd HER301G%20THRU%20HER308G.pdf Description: DIODE GEN PURP 200V 3A DO201AD
Produkt ist nicht verfügbar
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HER307G-D1-3000 HER307G-D1-3000 Yangzhou Yangjie Electronic Technology Co.,Ltd HER301G%20THRU%20HER308G.pdf Description: DIODE GEN PURP 800V 3A DO201AD
Produkt ist nicht verfügbar
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HER307G-D1-3000 HER307G-D1-3000 Yangzhou Yangjie Electronic Technology Co.,Ltd HER301G%20THRU%20HER308G.pdf Description: DIODE GEN PURP 800V 3A DO201AD
Produkt ist nicht verfügbar
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HER508G HER508G Yangzhou Yangjie Electronic Technology Co.,Ltd HER501G%20THRU%20HER508G.pdf Description: DIODE GEN PURP 1KV 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 52pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD (DO-27)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V
Produkt ist nicht verfügbar
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HER508G HER508G Yangzhou Yangjie Electronic Technology Co.,Ltd HER501G%20THRU%20HER508G.pdf Description: DIODE GEN PURP 1KV 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 52pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD (DO-27)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V
Produkt ist nicht verfügbar
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HS1B-F1-0000HF HS1B-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd HS1A%20THRU%20HS1M.pdf Description: DIODE GEN PURP 100V 1A DO214AC
Produkt ist nicht verfügbar
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HS1B-F1-0000HF HS1B-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd HS1A%20THRU%20HS1M.pdf Description: DIODE GEN PURP 100V 1A DO214AC
Produkt ist nicht verfügbar
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HS1M-F1-3000HF HS1M-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd HS1A%20THRU%20HS1M.pdf Description: DIODE GEN PURP 1000V 1A DO214AC
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.14 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
HS1M-F1-3000HF HS1M-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd HS1A%20THRU%20HS1M.pdf Description: DIODE GEN PURP 1000V 1A DO214AC
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
30+0.6 EUR
100+0.34 EUR
500+0.23 EUR
1000+0.17 EUR
2000+0.15 EUR
Mindestbestellmenge: 22
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HS2J-F1-0000HF HS2J-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd HS2A%20THRU%20HS2M.pdf Description: DIODE GEN PURP 600V 2A DO214AA
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
31+0.58 EUR
100+0.33 EUR
500+0.22 EUR
1000+0.17 EUR
Mindestbestellmenge: 23
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HS2J-F1-0000HF HS2J-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd HS2A%20THRU%20HS2M.pdf Description: DIODE GEN PURP 600V 2A DO214AA
Produkt ist nicht verfügbar
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HS2K-F1-0000HF HS2K-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd HS2A%20THRU%20HS2M.pdf Description: DIODE GEN PURP 800V 2A DO214AA
Produkt ist nicht verfügbar
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HS2K-F1-0000HF HS2K-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd HS2A%20THRU%20HS2M.pdf Description: DIODE GEN PURP 800V 2A DO214AA
Produkt ist nicht verfügbar
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HS2MA-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd HS2AA%20THRU%20HS2MA.pdf Description: HE DIODE 1000V 2A SMA
Produkt ist nicht verfügbar
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HS2MA-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd HS2AA%20THRU%20HS2MA.pdf Description: HE DIODE 1000V 2A SMA
Produkt ist nicht verfügbar
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HS2M-F1-0000HF HS2M-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd HS2A%20THRU%20HS2M.pdf Description: DIODE GEN PURP 1000V 2A DO214AA
Produkt ist nicht verfügbar
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HS2M-F1-0000HF HS2M-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd HS2A%20THRU%20HS2M.pdf Description: DIODE GEN PURP 1000V 2A DO214AA
Produkt ist nicht verfügbar
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HS3F HS3F Yangzhou Yangjie Electronic Technology Co.,Ltd HS3A%20THRU%20HS3M.pdf Description: DIODE GEN PURP 300V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS3F HS3F Yangzhou Yangjie Electronic Technology Co.,Ltd HS3A%20THRU%20HS3M.pdf Description: DIODE GEN PURP 300V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS3F-F1-3000HF HS3F-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd HS3A%20THRU%20HS3M.pdf Description: DIODE GEN PURP 300V 3A DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS3F-F1-3000HF HS3F-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd HS3A%20THRU%20HS3M.pdf Description: DIODE GEN PURP 300V 3A DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS3K HS3K Yangzhou Yangjie Electronic Technology Co.,Ltd HS3A%20THRU%20HS3M.pdf Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS3K HS3K Yangzhou Yangjie Electronic Technology Co.,Ltd HS3A%20THRU%20HS3M.pdf Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS3M-F1-0000 HS3M-F1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd HS3A%20THRU%20HS3M.pdf Description: DIODE GEN PURP 1000V 3A DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS3JB GS3AB%20THRU%20GS3MB.pdf
GS3JB
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS3JB-F1-3000HF GS3AB%20THRU%20GS3MB.pdf
GS3JB-F1-3000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 3A DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS3JB-F1-3000HF GS3AB%20THRU%20GS3MB.pdf
GS3JB-F1-3000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 3A DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS3KB GS3AB%20THRU%20GS3MB.pdf
GS3KB
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS3KB GS3AB%20THRU%20GS3MB.pdf
GS3KB
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS3KB-F1-3000HF GS3AB%20THRU%20GS3MB.pdf
GS3KB-F1-3000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS3KB-F1-3000HF GS3AB%20THRU%20GS3MB.pdf
GS3KB-F1-3000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS3MB GS3AB%20THRU%20GS3MB.pdf
GS3MB
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS3MB GS3AB%20THRU%20GS3MB.pdf
GS3MB
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS3MB-F1-0000HF GS3AB%20THRU%20GS3MB.pdf
GS3MB-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS3MB-F1-0000HF GS3AB%20THRU%20GS3MB.pdf
GS3MB-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS3M-F1-0000 GS3A%20THRU%20GS3M.pdf
GS3M-F1-0000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS3M-F1-0000 GS3A%20THRU%20GS3M.pdf
GS3M-F1-0000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS5G GS5A%20THRU%20GS5M.pdf
GS5G
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS5G GS5A%20THRU%20GS5M.pdf
GS5G
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS5M GS5A%20THRU%20GS5M.pdf
GS5M
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS5M GS5A%20THRU%20GS5M.pdf
GS5M
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS5M-F1-3000HF GS5A%20THRU%20GS5M.pdf
GS5M-F1-3000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 5A DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS5M-F1-3000HF GS5A%20THRU%20GS5M.pdf
GS5M-F1-3000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 5A DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
H1K H1A%20THRU%20H1M.pdf
H1K
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
H1K H1A%20THRU%20H1M.pdf
H1K
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
H1M-F1-0000HF H1A%20THRU%20H1M.pdf
H1M-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 1A SOD123FL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
H1M-F1-0000HF H1A%20THRU%20H1M.pdf
H1M-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 1A SOD123FL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
H2GF H2AF%20THRU%20H2MF.pdf
H2GF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
H2GF H2AF%20THRU%20H2MF.pdf
H2GF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 2A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HDL10S HDL1S%20THRU%20HDL10S.pdf
HDL10S
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 0.8A MBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HDL10S HDL1S%20THRU%20HDL10S.pdf
HDL10S
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 0.8A MBLS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 3446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
70+0.25 EUR
129+0.14 EUR
500+0.11 EUR
1000+0.075 EUR
2000+0.062 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
HDL10S-F1-0010 HDL1S%20THRU%20HDL10S.pdf
HDL10S-F1-0010
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 0.8A MBLS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HDL10S-F1-0010 HDL1S%20THRU%20HDL10S.pdf
HDL10S-F1-0010
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 0.8A MBLS
auf Bestellung 3910 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
35+0.51 EUR
100+0.27 EUR
500+0.18 EUR
1000+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
HER104G-D1-3000 HER101G%20THRU%20HER108G.pdf
HER104G-D1-3000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 300V 1A DO41
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER104G-D1-3000 HER101G%20THRU%20HER108G.pdf
HER104G-D1-3000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 300V 1A DO41
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER106G-D1-0000 HER101G%20THRU%20HER108G.pdf
HER106G-D1-0000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 1A DO41
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER106G-D1-0000 HER101G%20THRU%20HER108G.pdf
HER106G-D1-0000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 1A DO41
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER208G-D1-0000 HER201G%20THRU%20HER208G.pdf
HER208G-D1-0000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 2A DO15
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER208G-D1-0000 HER201G%20THRU%20HER208G.pdf
HER208G-D1-0000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 2A DO15
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER303G-D1-3000 HER301G%20THRU%20HER308G.pdf
HER303G-D1-3000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 3A DO201AD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER303G-D1-3000 HER301G%20THRU%20HER308G.pdf
HER303G-D1-3000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 3A DO201AD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER307G-D1-3000 HER301G%20THRU%20HER308G.pdf
HER307G-D1-3000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO201AD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER307G-D1-3000 HER301G%20THRU%20HER308G.pdf
HER307G-D1-3000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO201AD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER508G HER501G%20THRU%20HER508G.pdf
HER508G
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 52pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD (DO-27)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER508G HER501G%20THRU%20HER508G.pdf
HER508G
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 52pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD (DO-27)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS1B-F1-0000HF HS1A%20THRU%20HS1M.pdf
HS1B-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 100V 1A DO214AC
Produkt ist nicht verfügbar
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HS1B-F1-0000HF HS1A%20THRU%20HS1M.pdf
HS1B-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 100V 1A DO214AC
Produkt ist nicht verfügbar
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HS1M-F1-3000HF HS1A%20THRU%20HS1M.pdf
HS1M-F1-3000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 1A DO214AC
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.14 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
HS1M-F1-3000HF HS1A%20THRU%20HS1M.pdf
HS1M-F1-3000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 1A DO214AC
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
30+0.6 EUR
100+0.34 EUR
500+0.23 EUR
1000+0.17 EUR
2000+0.15 EUR
Mindestbestellmenge: 22
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HS2J-F1-0000HF HS2A%20THRU%20HS2M.pdf
HS2J-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 2A DO214AA
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
31+0.58 EUR
100+0.33 EUR
500+0.22 EUR
1000+0.17 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
HS2J-F1-0000HF HS2A%20THRU%20HS2M.pdf
HS2J-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 2A DO214AA
Produkt ist nicht verfügbar
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HS2K-F1-0000HF HS2A%20THRU%20HS2M.pdf
HS2K-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 2A DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2K-F1-0000HF HS2A%20THRU%20HS2M.pdf
HS2K-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 2A DO214AA
Produkt ist nicht verfügbar
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HS2MA-F1-0000HF HS2AA%20THRU%20HS2MA.pdf
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: HE DIODE 1000V 2A SMA
Produkt ist nicht verfügbar
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HS2MA-F1-0000HF HS2AA%20THRU%20HS2MA.pdf
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: HE DIODE 1000V 2A SMA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2M-F1-0000HF HS2A%20THRU%20HS2M.pdf
HS2M-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 2A DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2M-F1-0000HF HS2A%20THRU%20HS2M.pdf
HS2M-F1-0000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 2A DO214AA
Produkt ist nicht verfügbar
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HS3F HS3A%20THRU%20HS3M.pdf
HS3F
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 300V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
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HS3F HS3A%20THRU%20HS3M.pdf
HS3F
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 300V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS3F-F1-3000HF HS3A%20THRU%20HS3M.pdf
HS3F-F1-3000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 300V 3A DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS3F-F1-3000HF HS3A%20THRU%20HS3M.pdf
HS3F-F1-3000HF
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 300V 3A DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS3K HS3A%20THRU%20HS3M.pdf
HS3K
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS3K HS3A%20THRU%20HS3M.pdf
HS3K
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS3M-F1-0000 HS3A%20THRU%20HS3M.pdf
HS3M-F1-0000
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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