Produkte > YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO.,LTD > Alle Produkte des Herstellers YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO.,LTD (1772) > Seite 11 nach 30
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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GBPC3506-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
 Description: RECT BRIDGE 600V 35A GBPC |
Produkt ist nicht verfügbar |
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GBPC3508W-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 35A GBPCW-G |
Produkt ist nicht verfügbar |
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GBPC5010-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 50A GBPC |
Produkt ist nicht verfügbar |
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GBU1006-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 600V 10A GBU |
Produkt ist nicht verfügbar |
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GBU1008-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 10A GBU |
Produkt ist nicht verfügbar |
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GBU1010A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 10A GBU Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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GBU1010A-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 10A GBU |
Produkt ist nicht verfügbar |
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GBU1506-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 600V 15A GBU |
Produkt ist nicht verfügbar |
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GBU1508-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 15A GBU |
Produkt ist nicht verfügbar |
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GBU1510A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 15A GBU Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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GBU1510A-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 15A GBU |
Produkt ist nicht verfügbar |
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GBU1510-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 15A GBU |
Produkt ist nicht verfügbar |
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GBU2508 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 25A GBU Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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GBU2508-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 25A GBU |
Produkt ist nicht verfügbar |
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GBU2510-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 25A GBU |
Produkt ist nicht verfügbar |
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GBU3008 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 30A GBU Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 30 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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GBU3008-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 30A GBU |
Produkt ist nicht verfügbar |
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GBU406A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 600V 4A GBU Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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GBU406A-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 600V 4A GBU |
Produkt ist nicht verfügbar |
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GBU406-B1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 600V 4A GBU |
Produkt ist nicht verfügbar |
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GBU408A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 4A GBU Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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GBU408A-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 4A GBU |
Produkt ist nicht verfügbar |
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GBU408-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 4A GBU |
Produkt ist nicht verfügbar |
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GBU410A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 4A GBU Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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GBU410A-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 4A GBU |
Produkt ist nicht verfügbar |
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GBU410-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 4A GBU |
Produkt ist nicht verfügbar |
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GBU606-B1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 600V 6A GBU |
Produkt ist nicht verfügbar |
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GBU608-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 6A GBU |
auf Bestellung 861 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU610A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 6A GBU Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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GBU610A-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 6A GBU |
Produkt ist nicht verfügbar |
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GBU610-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 6A GBU |
auf Bestellung 979 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU806A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 600V 8A GBU Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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GBU808-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 8A GBU |
Produkt ist nicht verfügbar |
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GBU810A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 8A GBU Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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GBU810A-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 8A GBU |
Produkt ist nicht verfügbar |
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GBU810-B1-3000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 8A GBU |
Produkt ist nicht verfügbar |
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GR1D | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 200V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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GR1D | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 200V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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GR1D-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 200V 1A DO214AC |
Produkt ist nicht verfügbar |
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GR1D-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 200V 1A DO214AC |
Produkt ist nicht verfügbar |
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GR1M-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1000V 1A DO214AC |
Produkt ist nicht verfügbar |
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GR1M-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1000V 1A DO214AC |
Produkt ist nicht verfügbar |
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GR2JA-F1-3000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 600V 2A DO214AC |
Produkt ist nicht verfügbar |
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GR2JA-F1-3000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 600V 2A DO214AC |
Produkt ist nicht verfügbar |
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GR2M | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1KV 2A DO214AA |
Produkt ist nicht verfügbar |
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GR2M | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1KV 2A DO214AA |
Produkt ist nicht verfügbar |
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GR2MA | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1KV 2A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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GR2MA | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1KV 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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GR2M-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1000V 2A DO214AA |
Produkt ist nicht verfügbar |
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GR2M-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1000V 2A DO214AA |
Produkt ist nicht verfügbar |
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GR3K | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 800V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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GR3K | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 800V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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GR3M | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1KV 3A DO214AB |
Produkt ist nicht verfügbar |
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GR3M | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1KV 3A DO214AB |
Produkt ist nicht verfügbar |
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GR3MB | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1KV 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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GR3MB | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1KV 3A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 2747 Stücke: Lieferzeit 10-14 Tag (e) |
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GR3MB-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1000V 3A DO214AA |
auf Bestellung 98 Stücke: Lieferzeit 10-14 Tag (e) |
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GR3MB-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1000V 3A DO214AA |
Produkt ist nicht verfügbar |
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GR3M-F1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1000V 3A DO214AB |
Produkt ist nicht verfügbar |
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GR3M-F1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1000V 3A DO214AB |
Produkt ist nicht verfügbar |
| GBPC3506-A1-0000 |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 35A GBPC
Description: RECT BRIDGE 600V 35A GBPC
Produkt ist nicht verfügbar
| GBPC3508W-A1-0000 |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 35A GBPCW-G
Description: RECT BRIDGE 800V 35A GBPCW-G
Produkt ist nicht verfügbar
| GBPC5010-A1-0000 |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 50A GBPC
Description: RECT BRIDGE 1000V 50A GBPC
Produkt ist nicht verfügbar
| GBU1006-B1-0000 |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 10A GBU
Description: RECT BRIDGE 600V 10A GBU
Produkt ist nicht verfügbar
| GBU1008-B1-0000 |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 10A GBU
Description: RECT BRIDGE 800V 10A GBU
Produkt ist nicht verfügbar
| GBU1010A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 10A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: RECT BRIDGE 1000V 10A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
| GBU1010A-B1-0000 |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 10A GBU
Description: RECT BRIDGE 1000V 10A GBU
Produkt ist nicht verfügbar
| GBU1506-B1-0000 |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 15A GBU
Description: RECT BRIDGE 600V 15A GBU
Produkt ist nicht verfügbar
| GBU1508-B1-0000 |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 15A GBU
Description: RECT BRIDGE 800V 15A GBU
Produkt ist nicht verfügbar
| GBU1510A |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 15A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: RECT BRIDGE 1000V 15A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
| GBU1510A-B1-0000 |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 15A GBU
Description: RECT BRIDGE 1000V 15A GBU
Produkt ist nicht verfügbar
| GBU1510-B1-0000 |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 15A GBU
Description: RECT BRIDGE 1000V 15A GBU
Produkt ist nicht verfügbar
| GBU2508 |
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Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 25A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: RECT BRIDGE 800V 25A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
| GBU2508-B1-0000 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 25A GBU
Description: RECT BRIDGE 800V 25A GBU
Produkt ist nicht verfügbar
| GBU2510-B1-0000 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 25A GBU
Description: RECT BRIDGE 1000V 25A GBU
Produkt ist nicht verfügbar
| GBU3008 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 30A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: RECT BRIDGE 800V 30A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
| GBU3008-B1-0000 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 30A GBU
Description: RECT BRIDGE 800V 30A GBU
Produkt ist nicht verfügbar
| GBU406A |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: RECT BRIDGE 600V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| GBU406A-B1-0000 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 4A GBU
Description: RECT BRIDGE 600V 4A GBU
Produkt ist nicht verfügbar
| GBU406-B1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 4A GBU
Description: RECT BRIDGE 600V 4A GBU
Produkt ist nicht verfügbar
| GBU408A |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: RECT BRIDGE 800V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
| GBU408A-B1-0000 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 4A GBU
Description: RECT BRIDGE 800V 4A GBU
Produkt ist nicht verfügbar
| GBU408-B1-0000 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 4A GBU
Description: RECT BRIDGE 800V 4A GBU
Produkt ist nicht verfügbar
| GBU410A |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: RECT BRIDGE 1000V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
| GBU410A-B1-0000 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 4A GBU
Description: RECT BRIDGE 1000V 4A GBU
Produkt ist nicht verfügbar
| GBU410-B1-0000 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 4A GBU
Description: RECT BRIDGE 1000V 4A GBU
Produkt ist nicht verfügbar
| GBU606-B1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 6A GBU
Description: RECT BRIDGE 600V 6A GBU
Produkt ist nicht verfügbar
| GBU608-B1-0000 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 6A GBU
Description: RECT BRIDGE 800V 6A GBU
auf Bestellung 861 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 1.62 EUR |
| 13+ | 1.43 EUR |
| 100+ | 1.1 EUR |
| 500+ | 0.87 EUR |
| GBU610A |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: RECT BRIDGE 1000V 6A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
| GBU610A-B1-0000 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A GBU
Description: RECT BRIDGE 1000V 6A GBU
Produkt ist nicht verfügbar
| GBU610-B1-0000 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A GBU
Description: RECT BRIDGE 1000V 6A GBU
auf Bestellung 979 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 1.74 EUR |
| 12+ | 1.54 EUR |
| 100+ | 1.18 EUR |
| 500+ | 0.93 EUR |
| GBU806A |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: RECT BRIDGE 600V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| GBU808-B1-0000 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 8A GBU
Description: RECT BRIDGE 800V 8A GBU
Produkt ist nicht verfügbar
| GBU810A |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: RECT BRIDGE 1000V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
| GBU810A-B1-0000 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 8A GBU
Description: RECT BRIDGE 1000V 8A GBU
Produkt ist nicht verfügbar
| GBU810-B1-3000 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 8A GBU
Description: RECT BRIDGE 1000V 8A GBU
Produkt ist nicht verfügbar
| GR1D |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
| GR1D |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
| GR1D-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 1A DO214AC
Description: DIODE GEN PURP 200V 1A DO214AC
Produkt ist nicht verfügbar
| GR1D-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 1A DO214AC
Description: DIODE GEN PURP 200V 1A DO214AC
Produkt ist nicht verfügbar
| GR1M-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 1A DO214AC
Description: DIODE GEN PURP 1000V 1A DO214AC
Produkt ist nicht verfügbar
| GR1M-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 1A DO214AC
Description: DIODE GEN PURP 1000V 1A DO214AC
Produkt ist nicht verfügbar
| GR2JA-F1-3000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 2A DO214AC
Description: DIODE GEN PURP 600V 2A DO214AC
Produkt ist nicht verfügbar
| GR2JA-F1-3000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 2A DO214AC
Description: DIODE GEN PURP 600V 2A DO214AC
Produkt ist nicht verfügbar
| GR2M |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 2A DO214AA
Description: DIODE GEN PURP 1KV 2A DO214AA
Produkt ist nicht verfügbar
| GR2M |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 2A DO214AA
Description: DIODE GEN PURP 1KV 2A DO214AA
Produkt ist nicht verfügbar
| GR2MA |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
| GR2MA |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
| GR2M-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 2A DO214AA
Description: DIODE GEN PURP 1000V 2A DO214AA
Produkt ist nicht verfügbar
| GR2M-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 2A DO214AA
Description: DIODE GEN PURP 1000V 2A DO214AA
Produkt ist nicht verfügbar
| GR3K |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
| GR3K |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
| GR3M |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 3A DO214AB
Description: DIODE GEN PURP 1KV 3A DO214AB
Produkt ist nicht verfügbar
| GR3M |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 3A DO214AB
Description: DIODE GEN PURP 1KV 3A DO214AB
Produkt ist nicht verfügbar
| GR3MB |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
| GR3MB |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 2747 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 31+ | 0.58 EUR |
| 41+ | 0.43 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.13 EUR |
| GR3MB-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AA
Description: DIODE GEN PURP 1000V 3A DO214AA
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 0.65 EUR |
| 36+ | 0.5 EUR |
| GR3MB-F1-0000HF |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AA
Description: DIODE GEN PURP 1000V 3A DO214AA
Produkt ist nicht verfügbar
| GR3M-F1-0000 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AB
Description: DIODE GEN PURP 1000V 3A DO214AB
Produkt ist nicht verfügbar
| GR3M-F1-0000 |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AB
Description: DIODE GEN PURP 1000V 3A DO214AB
Produkt ist nicht verfügbar