Produkte > IXY

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
IXYA12N250CHVLittelfuseIGBT Transistors IGBT XPT
Produkt ist nicht verfügbar
IXYA12N250CHVIXYSDescription: DISC IGBT XPT-HI VOLTAGE TO-263D
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
Produkt ist nicht verfügbar
IXYA15N65C3D1IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.37 EUR
24+ 3.05 EUR
30+ 2.43 EUR
32+ 2.29 EUR
Mindestbestellmenge: 22
IXYA15N65C3D1IXYSDescription: IGBT PT 650V 38A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 20 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXYA15N65C3D1IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 280 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.37 EUR
24+ 3.05 EUR
30+ 2.43 EUR
32+ 2.29 EUR
Mindestbestellmenge: 22
IXYA15N65C3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-263D2
Produkt ist nicht verfügbar
IXYA20N120A4HVLittelfuse1200V IGBT Chip Transistor
Produkt ist nicht verfügbar
IXYA20N120A4HVIXYSDescription: DISC IGBT XPT-GENX4 TO-263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 800mV, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
IXYA20N120A4HVIXYSIGBT Transistors IGBT XPT-GENX4
auf Bestellung 3146 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.83 EUR
10+ 17.81 EUR
50+ 11.99 EUR
100+ 11.55 EUR
250+ 11.51 EUR
500+ 11.39 EUR
1000+ 10.54 EUR
IXYA20N120B4HVIXYSIGBT Transistors 4TH GENERATION (GENX4)TRENCH
auf Bestellung 1187 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.71 EUR
10+ 16.03 EUR
50+ 13.11 EUR
100+ 12.51 EUR
1000+ 12.04 EUR
2500+ 10.03 EUR
IXYA20N120B4HVLittelfuse1200V XPT GenX4 IGBT
Produkt ist nicht verfügbar
IXYA20N120B4HVIXYSDescription: IGBT 1200V 20A GENX4 XPT TO263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960mV, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
auf Bestellung 226 Stücke:
Lieferzeit 10-14 Tag (e)
IXYA20N120C3HVLittelfuseTrans IGBT Chip N-CH 1200V 40A 278000mW
Produkt ist nicht verfügbar
IXYA20N120C3HVIXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 1mJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
Produkt ist nicht verfügbar
IXYA20N120C3HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYA20N120C3HVIXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYA20N120C3HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Produkt ist nicht verfügbar
IXYA20N120C3HV-TRLIXYSIGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar
IXYA20N120C3HV-TRLLittelfuseIXYA20N120C3HV TRL
Produkt ist nicht verfügbar
IXYA20N120C3HV-TRLIXYSDescription: IXYA20N120C3HV TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
Produkt ist nicht verfügbar
IXYA20N120C4HVLittelfuse1200V IGBT Chip Transistor
Produkt ist nicht verfügbar
IXYA20N120C4HVIXYSDescription: IGBT 1200V 20A X4 HSPEED TO263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 14ns/160ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 960mV, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
auf Bestellung 1099 Stücke:
Lieferzeit 10-14 Tag (e)
IXYA20N120C4HVIXYSIGBT Transistors IGBT 4TH GENERATION GENX4
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.71 EUR
10+ 15.63 EUR
50+ 12.94 EUR
100+ 12.64 EUR
500+ 11.14 EUR
1000+ 10.03 EUR
2500+ 9.59 EUR
IXYA20N120C4HV-TRLLittelfuseDisc. IGBT XPT-GenX4 TO-263HV
Produkt ist nicht verfügbar
IXYA20N120C4HV-TRLIXYSDescription: DISC. IGBT XPT-GENX4 TO-263HV
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
IXYA20N65B3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 271ns
Produkt ist nicht verfügbar
IXYA20N65B3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 700µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
Produkt ist nicht verfügbar
IXYA20N65C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYA20N65C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
Produkt ist nicht verfügbar
IXYA20N65C3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 650µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
300+4.09 EUR
Mindestbestellmenge: 300
IXYA20N65C3IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYA20N65C3-TRLIXYSIGBT Transistors IXYA20N65C3 TRL
Produkt ist nicht verfügbar
IXYA20N65C3-TRLIXYSDescription: IXYA20N65C3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
Produkt ist nicht verfügbar
IXYA20N65C3D1IXYSDescription: IGBT 650V 50A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 650µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
auf Bestellung 183 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.62 EUR
50+ 6.04 EUR
100+ 5.18 EUR
Mindestbestellmenge: 3
IXYA20N65C3D1IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 180 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.82 EUR
17+ 4.33 EUR
21+ 3.46 EUR
22+ 3.27 EUR
Mindestbestellmenge: 15
IXYA20N65C3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-263D2
Produkt ist nicht verfügbar
IXYA20N65C3D1LittelfuseTrans IGBT Chip N-CH 650V 50A 200000mW 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXYA20N65C3D1IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.82 EUR
17+ 4.33 EUR
21+ 3.46 EUR
22+ 3.27 EUR
Mindestbestellmenge: 15
IXYA20N65C3D1TRLLittelfuseIXYA20N65C3D1TRL
Produkt ist nicht verfügbar
IXYA30N120A3HVIXYSDescription: IGBT DISCRETE TO-263HV
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
IXYA30N120A3HVIXYSIGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar
IXYA30N120A4HVLittelfuse1200V IGBT Chip Transistor
Produkt ist nicht verfügbar
IXYA30N120A4HVIXYSDescription: DISC IGBT XPT-GENX4 TO-263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
300+11.25 EUR
Mindestbestellmenge: 300
IXYA30N120A4HVIXYSIGBT Transistors IGBT XPT-GENX4
auf Bestellung 279 Stücke:
Lieferzeit 10-14 Tag (e)
1+16.63 EUR
10+ 14.64 EUR
50+ 12.44 EUR
100+ 12 EUR
500+ 11.16 EUR
IXYA30N120A4HVLittelfuse1200V IGBT Chip Transistor
Produkt ist nicht verfügbar
IXYA50N65C3LittelfuseTrans IGBT Chip N-CH 650V 132A 600000mW 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXYA50N65C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.02 EUR
12+ 6.11 EUR
Mindestbestellmenge: 8
IXYA50N65C3IXYSDescription: IGBT 650V 130A 600W TO263
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
IXYA50N65C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.02 EUR
12+ 6.11 EUR
Mindestbestellmenge: 8
IXYA50N65C3IXYSIGBT Transistors 650V/130A XPT C3-Class TO-263
Produkt ist nicht verfügbar
IXYA50N65C3-TRLIXYSDiscrete Semiconductor Modules IXYA50N65C3 TRL
Produkt ist nicht verfügbar
IXYA50N65C3-TRLIXYSDescription: IXYA50N65C3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 800µJ (on), 470µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
Produkt ist nicht verfügbar
IXYA8N250CHVIXYSDescription: IGBT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
1+26.1 EUR
10+ 23.98 EUR
100+ 20.26 EUR
IXYA8N250CHVIXYSIXYA8N250CHV SMD IGBT transistors
Produkt ist nicht verfügbar
IXYA8N90C3D1IXYSDescription: IGBT 900V 20A 125W C3 TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
Produkt ist nicht verfügbar
IXYA8N90C3D1IXYSIXYA8N90C3D1 SMD IGBT transistors
Produkt ist nicht verfügbar
IXYA8N90C3D1IXYSIGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3 w/ Diode
Produkt ist nicht verfügbar
IXYA8N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 20A 125000mW 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXYB82N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.04kW; PLUS264™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.04kW
Case: PLUS264™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 295ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
3+28.49 EUR
Mindestbestellmenge: 3
IXYB82N120C3H1IXYSIGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
1+51.43 EUR
10+ 47.43 EUR
25+ 45.3 EUR
100+ 40.5 EUR
IXYB82N120C3H1LittelfuseTrans IGBT Chip N-CH 1200V 164A 1040W 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXYB82N120C3H1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXYB82N120C3H1 - IGBT, 164 A, 2.75 V, 1.04 kW, 1.2 kV, TO-264AA, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.75
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.04
Bauform - Transistor: TO-264AA
Anzahl der Pins: 3
Produktpalette: XPT GenX3
Kollektor-Emitter-Spannung, max.: 1.2
productTraceability: No
Betriebstemperatur, max.: 150
Kontinuierlicher Kollektorstrom: 164
SVHC: No SVHC (12-Jan-2017)
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
IXYB82N120C3H1IXYSDescription: IGBT 1200V 164A 1040W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 29ns/192ns
Switching Energy: 4.95mJ (on), 2.78mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 215 nC
Part Status: Active
Current - Collector (Ic) (Max): 164 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 320 A
Power - Max: 1040 W
Produkt ist nicht verfügbar
IXYB82N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.04kW; PLUS264™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.04kW
Case: PLUS264™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 295ns
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
3+28.49 EUR
Mindestbestellmenge: 3
IXYF30N450IXYSDescription: IGBT 4500V 23A 230W ISOPLUS
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Supplier Device Package: ISOPLUS i4-PAC™
Td (on/off) @ 25°C: 38ns/168ns
Test Condition: 960V, 30A, 15Ohm, 15V
Gate Charge: 88 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 230 W
auf Bestellung 104 Stücke:
Lieferzeit 10-14 Tag (e)
1+222.96 EUR
10+ 213.18 EUR
IXYF30N450IXYSIXYF30N450 THT IGBT transistors
Produkt ist nicht verfügbar
IXYF30N450IXYSIGBT Transistors IGBT XPT-HI VOLTAGE
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
1+193.71 EUR
5+ 187.02 EUR
IXYF40N450IXYSIGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar
IXYF40N450Ixys CorporationHigh Voltage XPTTM IGBT
Produkt ist nicht verfügbar
IXYF40N450Littelfuse Inc.Description: IGBT 4500V 32A ISOPLUS I4PAK
Packaging: Tube
Package / Case: i4-Pac™-4, Isolated
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Supplier Device Package: ISOPLUS i4-PAC™
Td (on/off) @ 25°C: 36ns/110ns
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 290 W
Produkt ist nicht verfügbar
IXYF40N450LittelfuseHigh Voltage XPTTM IGBT
Produkt ist nicht verfügbar
IXYH100N65A3IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYH100N65A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Turn-on time: 87ns
Turn-off time: 459ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH100N65A3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/174ns
Switching Energy: 3.15mJ (on), 2.2mJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 178 nC
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 470 W
Produkt ist nicht verfügbar
IXYH100N65A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Turn-on time: 87ns
Turn-off time: 459ns
Produkt ist nicht verfügbar
IXyH100N65C3IXYSDescription: IGBT PT 650V 200A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/106ns
Switching Energy: 2.15mJ (on), 840µJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 830 W
auf Bestellung 1433 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.8 EUR
30+ 15.01 EUR
120+ 13.43 EUR
510+ 11.85 EUR
1020+ 10.67 EUR
IXyH100N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 200ns
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
IXYH100N65C3LittelfuseTrans IGBT Chip N-CH 650V 200A 830W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH100N65C3LittelfuseTrans IGBT Chip N-CH 650V 200A 830000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXyH100N65C3IXYSIGBT Transistors 650V/200A XPT C3-Class TO-247
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.96 EUR
10+ 16.24 EUR
30+ 14.73 EUR
120+ 13.52 EUR
270+ 11.76 EUR
510+ 11.6 EUR
IXyH100N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
4+17.88 EUR
5+ 14.3 EUR
Mindestbestellmenge: 4
IXYH10N170CLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH10N170CIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.6 EUR
10+ 16.81 EUR
30+ 16.02 EUR
120+ 13.9 EUR
510+ 12.88 EUR
IXYH10N170CIXYSIXYH10N170C THT IGBT transistors
Produkt ist nicht verfügbar
IXYH10N170CIXYSDescription: IGBT 1700V 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 17 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/130ns
Switching Energy: 1.4mJ (on), 700µJ (off)
Test Condition: 850V, 10A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 280 W
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.18 EUR
30+ 14.52 EUR
120+ 13 EUR
510+ 11.47 EUR
IXYH10N170CV1IXYSIXYH10N170CV1 THT IGBT transistors
Produkt ist nicht verfügbar
IXYH10N170CV1LITTELFUSEDescription: LITTELFUSE - IXYH10N170CV1 - TRANSISTOR, IGBT, 1.7KV, 36A, TO-247AD
Kollektor-Emitter-Sättigungsspannung Vce(on): 3.6
Verlustleistung Pd: 280
Bauform - Transistor: TO-247AD
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 1.7
Anzahl der Pins: 3
Produktpalette: XPT Series
DC-Kollektorstrom: 36
Betriebstemperatur, max.: 175
SVHC: To Be Advised
Produkt ist nicht verfügbar
IXYH10N170CV1IXYSDescription: IGBT 1.7KV 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/130ns
Switching Energy: 1.4mJ (on), 700µJ (off)
Test Condition: 850V, 10A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 280 W
auf Bestellung 4622 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.23 EUR
10+ 20.47 EUR
100+ 17.7 EUR
500+ 16.04 EUR
1000+ 14.71 EUR
IXYH10N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH10N170CV1IXYSIGBT Transistors 1700V/10A XPT IGBT w/ Diode
auf Bestellung 166 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.61 EUR
10+ 19.04 EUR
30+ 17.49 EUR
60+ 17.48 EUR
120+ 16.46 EUR
270+ 16.17 EUR
510+ 14.89 EUR
IXYH10N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH120N65A5IXYSIGBT Transistors XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.84 EUR
10+ 19.15 EUR
120+ 16.17 EUR
270+ 14.33 EUR
510+ 13.27 EUR
1020+ 12.53 EUR
2520+ 12.23 EUR
IXYH120N65A5LittelfuseExtreme Light Punch Through IGBT
Produkt ist nicht verfügbar
IXYH120N65A5LITTELFUSEDescription: LITTELFUSE - IXYH120N65A5 - IGBT, 290 A, 1.22 V, 830 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.22V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 830W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pins
Produktpalette: XPT GenX5 Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 290A
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
IXYH120N65A5IXYSDescription: IGBT 650V 120A X5 XPT TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 45ns/370ns
Switching Energy: 1.25mJ (on), 3.2mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 314 nC
Part Status: Active
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 790 A
Power - Max: 830 W
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.69 EUR
30+ 15.94 EUR
IXYH120N65B3IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYH120N65B3IXYSDescription: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/168ns
Switching Energy: 1.34mJ (on), 1.5mJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 760 A
Power - Max: 1360 W
Produkt ist nicht verfügbar
IXYH120N65C3IXYSDescription: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/127ns
Switching Energy: 1.25mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 265 nC
Part Status: Active
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 620 A
Power - Max: 1360 W
Produkt ist nicht verfügbar
IXYH120N65C3IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYH12N250CIXYSDescription: IGBT 2500V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
Produkt ist nicht verfügbar
IXYH12N250CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 12A
Power dissipation: 310W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Turn-on time: 12ns
Turn-off time: 167ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH12N250CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 12A
Power dissipation: 310W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Turn-on time: 12ns
Turn-off time: 167ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
IXYH12N250CV1HVIXYSDescription: IGBT 2500V 28A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
auf Bestellung 714 Stücke:
Lieferzeit 10-14 Tag (e)
1+41.29 EUR
10+ 36.69 EUR
100+ 32.09 EUR
500+ 27.39 EUR
IXYH12N250CV1HVIXYSIGBT Modules IGBT XPT-HI VOLTAGE
Produkt ist nicht verfügbar
IXYH12N250CV1HVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 12A
Power dissipation: 310W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 333ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH12N250CV1HVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 12A
Power dissipation: 310W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 333ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
IXYH16N170CIXYSDescription: IGBT 1.7KV 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/140ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 310 W
auf Bestellung 1219 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.28 EUR
10+ 15.23 EUR
100+ 13.17 EUR
500+ 11.93 EUR
1000+ 10.95 EUR
Mindestbestellmenge: 2
IXYH16N170CIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
auf Bestellung 63 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.72 EUR
10+ 16.3 EUR
30+ 15.93 EUR
120+ 13.9 EUR
IXYH16N170CIXYSIXYH16N170C THT IGBT transistors
Produkt ist nicht verfügbar
IXYH16N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH16N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH16N170CV1IXYSDescription: IGBT 1.7KV 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/140ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 310 W
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.62 EUR
10+ 21.68 EUR
IXYH16N170CV1IXYSIGBT Transistors IGBT XPT-HI VOLTAGE
Produkt ist nicht verfügbar
IXYH16N170CV1IXYSIXYH16N170CV1 THT IGBT transistors
Produkt ist nicht verfügbar
IXYH16N250CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH16N250CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
IXYH16N250CIXYSDescription: IGBT 2500V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 14ns/260ns
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Test Condition: 1250V, 16A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 126 A
Power - Max: 500 W
Produkt ist nicht verfügbar
IXYH16N250CV1HVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 126A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 541ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
IXYH16N250CV1HVIXYSDescription: IGBT 2500V 35A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/260ns
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Test Condition: 1250V, 16A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 126 A
Power - Max: 500 W
Produkt ist nicht verfügbar
IXYH16N250CV1HVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 126A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 541ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH16N250CV1HVIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
auf Bestellung 77 Stücke:
Lieferzeit 10-14 Tag (e)
1+51.22 EUR
10+ 46.41 EUR
120+ 40.6 EUR
270+ 36.66 EUR
IXYH1982LittelfuseIXYH1982^IXYS
Produkt ist nicht verfügbar
IXYH20N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Produkt ist nicht verfügbar
IXYH20N120C3IXYSDescription: IGBT 1200V 40A 278W TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
Produkt ist nicht verfügbar
IXYH20N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH20N120C3LittelfuseTrans IGBT Chip N-CH 1200V 40A 278W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH20N120C3IXYSIGBT Transistors GenX3 1200V XPT IGBT
Produkt ist nicht verfügbar
IXYH20N120C3LittelfuseTrans IGBT Chip N-CH 1200V 40A 278000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH20N120C3D1IXYSIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.43 EUR
10+ 19.08 EUR
30+ 16.53 EUR
60+ 16.51 EUR
120+ 15.56 EUR
510+ 14.1 EUR
1020+ 13.55 EUR
IXYH20N120C3D1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXYH20N120C3D1 - IGBT, 36 A, 4 V, 230 W, 1.2 kV, TO-247AD, 3 Pin(s)
MSL: MSL 1 - unbegrenzt
Kollektor-Emitter-Sättigungsspannung Vce(on): 4
Verlustleistung Pd: 230
Bauform - Transistor: TO-247AD
Kollektor-Emitter-Spannung V(br)ceo: 1.2
Anzahl der Pins: 3
Produktpalette: XPT GenX3
DC-Kollektorstrom: 36
Betriebstemperatur, max.: 150
SVHC: No SVHC (07-Jul-2017)
Produkt ist nicht verfügbar
IXYH20N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 36A 230000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH20N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.16 EUR
7+ 10.98 EUR
Mindestbestellmenge: 5
IXYH20N120C3D1IXYSDescription: IGBT 1200V 36A 230W TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 230 W
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
IXYH20N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 291 Stücke:
Lieferzeit 7-14 Tag (e)
5+16.16 EUR
7+ 10.98 EUR
Mindestbestellmenge: 5
IXYH20N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 36A 230W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH20N120C4IXYSDescription: IGBT DISCRETE TO-247
Packaging: Tube
Produkt ist nicht verfügbar
IXYH20N120C4IXYSIGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar
IXYH20N65B3IXYSIGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar
IXYH20N65B3IXYSDescription: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
Produkt ist nicht verfügbar
IXYH20N65C3LittelfuseTrans IGBT Chip N-CH 650V 50A 230000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH20N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
Produkt ist nicht verfügbar
IXYH20N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH20N65C3IXYSDescription: IGBT 650V 50A 230W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
Produkt ist nicht verfügbar
IXYH20N65C3IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYH20N65C3D1IXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
Produkt ist nicht verfügbar
IXYH20N65C3D1IXYSIGBT Modules IGBT XPT-GENX4
Produkt ist nicht verfügbar
IXYH24N170CIxys CorporationTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
30+18.79 EUR
Mindestbestellmenge: 30
IXYH24N170CIXYSIGBT Transistors 1700V/58A High Volt
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.58 EUR
10+ 20.77 EUR
30+ 19.91 EUR
120+ 17.53 EUR
510+ 15.59 EUR
1020+ 14.71 EUR
2520+ 14.2 EUR
IXYH24N170CLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH24N170CLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH24N170CIXYSDescription: IGBT 1.7KV 58A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 20A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 12ns/160ns
Switching Energy: 4.9mJ (on), 1.95mJ (off)
Test Condition: 960V, 30A, 15Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 500 W
auf Bestellung 529 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.39 EUR
30+ 18.13 EUR
120+ 17.07 EUR
510+ 15.47 EUR
IXYH24N170CIXYSIXYH24N170C THT IGBT transistors
Produkt ist nicht verfügbar
IXYH24N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH24N170CV1IXYSDescription: IGBT 1.7KV 58A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 24A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 16ns/155ns
Switching Energy: 3.6mJ (on), 1.76mJ (off)
Test Condition: 850V, 24A, 5Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 500 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.94 EUR
10+ 26.37 EUR
100+ 22.8 EUR
IXYH24N170CV1IXYSIXYH24N170CV1 THT IGBT transistors
Produkt ist nicht verfügbar
IXYH24N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH24N170CV1IXYSIGBT Transistors IGBT XPT-HI VOLTAGE
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)
1+28.41 EUR
10+ 25.03 EUR
120+ 22.21 EUR
510+ 21.38 EUR
IXYH24N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 240W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH24N90C3IXYSIGBT Transistors GenX3 900V XPT IGBTs
Produkt ist nicht verfügbar
IXYH24N90C3LittelfuseTrans IGBT Chip N-CH 900V 46A 240000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH24N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 240W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Produkt ist nicht verfügbar
IXYH24N90C3IXYSDescription: IGBT 900V 46A 240W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/73ns
Switching Energy: 1.35mJ (on), 400µJ (off)
Test Condition: 450V, 24A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 240 W
Produkt ist nicht verfügbar
IXYH24N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 44A 200000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH24N90C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Produkt ist nicht verfügbar
IXYH24N90C3D1IXYSDescription: IGBT 900V 44A 200W C3 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/73ns
Switching Energy: 1.35mJ (on), 400µJ (off)
Test Condition: 450V, 24A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 44 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.47 EUR
IXYH24N90C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH24N90C3D1IXYSIGBT Transistors 900V 24A 2.7V XPT IGBTs GenX3 w/ Diode
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.61 EUR
10+ 16.81 EUR
30+ 15.98 EUR
120+ 13.32 EUR
270+ 12 EUR
510+ 11.4 EUR
1020+ 10.88 EUR
IXYH25N250CHVLittelfuseTrans IGBT Chip N-CH 2500V 95A 937000mW 3-Pin(3+Tab) TO-247HV
Produkt ist nicht verfügbar
IXYH25N250CHVIXYSDescription: IGBT 2500V 235A TO-247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
auf Bestellung 365 Stücke:
Lieferzeit 10-14 Tag (e)
1+59.26 EUR
10+ 52.66 EUR
100+ 46.06 EUR
IXYH25N250CHVLittelfuseTrans IGBT Chip N-CH 2500V 95A 937W 3-Pin(3+Tab) TO-247HV
Produkt ist nicht verfügbar
IXYH25N250CHVIXYSIXYH25N250CHV THT IGBT transistors
Produkt ist nicht verfügbar
IXYH25N250CHVIXYSIGBT Transistors 2500V/95A , HV XPT IGBT
auf Bestellung 304 Stücke:
Lieferzeit 10-14 Tag (e)
1+54.89 EUR
10+ 51.25 EUR
30+ 48.58 EUR
120+ 43.67 EUR
270+ 40.81 EUR
510+ 40.32 EUR
1020+ 39.86 EUR
IXYH25N250CHVLITTELFUSEDescription: LITTELFUSE - IXYH25N250CHV - TRANSISTOR, IGBT, 2.5KV, 95A, TO-247HV
Kollektor-Emitter-Sättigungsspannung Vce(on): 3.4
Verlustleistung Pd: 937
Bauform - Transistor: TO-247HV
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 2.5
Anzahl der Pins: 3
Produktpalette: XPT Series
DC-Kollektorstrom: 95
Betriebstemperatur, max.: 175
SVHC: To Be Advised
Produkt ist nicht verfügbar
IXYH30N120A4IXYSIGBT Transistors IGBT XPT-GENX4
Produkt ist nicht verfügbar
IXYH30N120A4IXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
300+13.59 EUR
Mindestbestellmenge: 300
IXYH30N120B4IXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/245ns
Switching Energy: 4.4mJ (on), 2.6mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 58 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 174 A
Power - Max: 500 W
Produkt ist nicht verfügbar
IXYH30N120B4IXYSIGBT Transistors IGBT XPT-GENX4
Produkt ist nicht verfügbar
IXYH30N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
Produkt ist nicht verfügbar
IXYH30N120C3IXYSIGBT Transistors 1200V XPT GenX3 IGBT
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.88 EUR
10+ 16.19 EUR
30+ 13.8 EUR
120+ 12.88 EUR
270+ 12.74 EUR
510+ 11.9 EUR
1020+ 11.46 EUR
IXYH30N120C3
Produktcode: 181016		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXYH30N120C3LittelfuseTrans IGBT Chip N-CH 1200V 75A 500000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH30N120C3LittelfuseTrans IGBT Chip N-CH 1200V 75A 500W 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH30N120C3IXYSDescription: IGBT 1200V 75A 500W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 500 W
auf Bestellung 158 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.01 EUR
30+ 15.18 EUR
120+ 13.58 EUR
IXYH30N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH30N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 66A 416000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH30N120C3D1IXYSDescription: IGBT 1200V 66A 416W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 133 A
Power - Max: 416 W
auf Bestellung 504 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.05 EUR
30+ 17.85 EUR
120+ 16.8 EUR
IXYH30N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 416W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 133A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
Anzahl je Verpackung: 300 Stücke
Produkt ist nicht verfügbar
IXYH30N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 416W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 133A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
Produkt ist nicht verfügbar
IXYH30N120C3D1IXYSIGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.89 EUR
10+ 19.29 EUR
30+ 17.58 EUR
60+ 17.14 EUR
120+ 16.46 EUR
270+ 16.39 EUR
510+ 15.42 EUR
IXYH30N120C4IXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
Produkt ist nicht verfügbar
IXYH30N120C4IXYSIGBT Transistors IGBT XPT-GENX4
Produkt ist nicht verfügbar
IXYH30N120C4LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH30N120C4H1IXYSIGBT Transistors IXYH30N120C4H1
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.76 EUR
10+ 11.81 EUR
30+ 10.68 EUR
120+ 9.82 EUR
270+ 9.24 EUR
510+ 8.68 EUR
1020+ 7.81 EUR
IXYH30N120C4H1IXYSDescription: IGBT TRENCH 1200V 94A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 310 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
Produkt ist nicht verfügbar
IXYH30N170CIXYSIXYH30N170C THT IGBT transistors
Produkt ist nicht verfügbar
IXYH30N170CIXYSDescription: 1700V/108A HIGH VOLTAGE XPT IGB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Test Condition: 850V, 30A, 10Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 108 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 255 A
Power - Max: 937 W
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.28 EUR
10+ 29.66 EUR
IXYH30N170CLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH30N170CLittelfuseTrans IGBT Chip N-CH 1700V 100A 937W 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH30N170CIXYSIGBT Transistors 1700V/108A High Voltage XPT IGBT
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
1+30.03 EUR
10+ 26.96 EUR
30+ 25.73 EUR
60+ 24.29 EUR
120+ 23.76 EUR
270+ 23.09 EUR
IXYH30N450HVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH30N450HVIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
auf Bestellung 444 Stücke:
Lieferzeit 10-14 Tag (e)
1+68.68 EUR
10+ 61.2 EUR
30+ 57.55 EUR
60+ 55.63 EUR
120+ 53.72 EUR
270+ 52.8 EUR
IXYH30N450HVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1545ns
Features of semiconductor devices: high voltage
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+43.49 EUR
Mindestbestellmenge: 2
IXYH30N450HVLITTELFUSEDescription: LITTELFUSE - IXYH30N450HV - IGBT, 60 A, 3.2 V, 430 W, 4.5 kV, TO-247HV, 3 Pin(s)
MSL: -
Kollektor-Emitter-Sättigungsspannung Vce(on): 3.2
Verlustleistung Pd: 430
Bauform - Transistor: TO-247HV
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 4.5
Anzahl der Pins: 3
Produktpalette: -
DC-Kollektorstrom: 60
Betriebstemperatur, max.: 150
SVHC: No SVHC (17-Jan-2022)
Produkt ist nicht verfügbar
IXYH30N450HVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1545ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
2+43.49 EUR
Mindestbestellmenge: 2
IXYH30N450HVIXYSDescription: IGBT 4500V 30A TO-247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Supplier Device Package: TO-247HV
IGBT Type: PT
Test Condition: 960V, 30A, 10Ohm, 15V
Gate Charge: 88 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 430 W
Produkt ist nicht verfügbar
IXYH30N450HVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH30N65B3D1IXYSDescription: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/87ns
Switching Energy: 830µJ (on), 640µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 270 W
Produkt ist nicht verfügbar
IXYH30N65B3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
Produkt ist nicht verfügbar
IXYH30N65C3IXYSDescription: IGBT 650V 60A 270W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Produkt ist nicht verfügbar
IXYH30N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH30N65C3IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYH30N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
Produkt ist nicht verfügbar
IXYH30N65C3H1IXYSIGBT Transistors 650V/60A XPT C3 Copacked TO-247
Produkt ist nicht verfügbar
IXYH30N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 60A 270000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH30N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
Produkt ist nicht verfügbar
IXYH30N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 60A 270000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH30N65C3H1IXYSDescription: IGBT 650V 60A 270W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Produkt ist nicht verfügbar
IXYH30N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 60A 270W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH30N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH40N120A4IXYSDescription: IGBT 1200V 40A GENX4 XPT TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
300+14.27 EUR
Mindestbestellmenge: 300
IXYH40N120A4IXYSIGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar
IXYH40N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
Produkt ist nicht verfügbar
IXYH40N120B3IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYH40N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH40N120B3IXYSDescription: IGBT 1200V 96A 577W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 577 W
Produkt ist nicht verfügbar
IXYH40N120B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH40N120B3D1LittelfuseTrans IGBT Chip N-CH 1200V 86A 480W 3-Pin(3+Tab) TO-247AD
auf Bestellung 4590 Stücke:
Lieferzeit 14-21 Tag (e)
6+26.11 EUR
10+ 23.25 EUR
25+ 21.51 EUR
50+ 19.75 EUR
100+ 18.53 EUR
500+ 17.14 EUR
Mindestbestellmenge: 6
IXYH40N120B3D1IXYSDescription: IGBT 1200V 86A 480W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 480 W
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.67 EUR
30+ 14.31 EUR
120+ 13.46 EUR
IXYH40N120B3D1LittelfuseTrans IGBT Chip N-CH 1200V 86A 480W 3-Pin(3+Tab) TO-247AD
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
10+17.23 EUR
25+ 15.85 EUR
50+ 14.65 EUR
100+ 13.59 EUR
250+ 12.64 EUR
Mindestbestellmenge: 10
IXYH40N120B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
Produkt ist nicht verfügbar
IXYH40N120B3D1LittelfuseTrans IGBT Chip N-CH 1200V 86A 480000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH40N120B3D1IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYH40N120B3D1LittelfuseTrans IGBT Chip N-CH 1200V 86A 480W 3-Pin(3+Tab) TO-247AD
auf Bestellung 4590 Stücke:
Lieferzeit 14-21 Tag (e)
6+26.11 EUR
10+ 23.25 EUR
25+ 21.51 EUR
50+ 19.75 EUR
100+ 18.53 EUR
500+ 17.14 EUR
Mindestbestellmenge: 6
IXYH40N120B4IXYSDescription: IGBT DISCRETE TO-247
Produkt ist nicht verfügbar
IXYH40N120B4IXYSIGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar
IXYH40N120B4H1LittelfuseIGBT Transistors IXYH40N120B4H1
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.33 EUR
10+ 13.15 EUR
30+ 11.92 EUR
120+ 10.95 EUR
270+ 10.31 EUR
510+ 9.66 EUR
1020+ 8.69 EUR
IXYH40N120B4H1IXYSIGBT Transistors IXYH40N120B4H1
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.33 EUR
10+ 13.15 EUR
30+ 11.92 EUR
120+ 10.95 EUR
270+ 10.31 EUR
510+ 9.66 EUR
1020+ 8.69 EUR
IXYH40N120B4H1IXYSDescription: IGBT TRENCH 1200V 112A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 430 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/220ns
Switching Energy: 5.9mJ (on), 2.9mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 600 W
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.44 EUR
30+ 12.33 EUR
120+ 11.03 EUR
510+ 9.74 EUR
Mindestbestellmenge: 2
IXYH40N120C3IXYSIGBT Transistors GenX3 1200V XPT IGBT
Produkt ist nicht verfügbar
IXYH40N120C3IXYSDescription: IGBT 1200V 70A 577W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 577 W
auf Bestellung 269 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.43 EUR
30+ 14.91 EUR
120+ 14.03 EUR
IXYH40N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 303ns
Produkt ist nicht verfügbar
IXYH40N120C3LittelfuseTrans IGBT Chip N-CH 1200V 90A 577000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH40N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 303ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH40N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 303ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH40N120C3D1IXYSIGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT
Produkt ist nicht verfügbar
IXYH40N120C3D1IXYSDescription: IGBT 1200V 64A 480W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 480 W
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.55 EUR
IXYH40N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 303ns
Produkt ist nicht verfügbar
IXYH40N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 80A 480000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH40N120C4IXYSIGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar
IXYH40N120C4IXYSDescription: IGBT DISCRETE TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 21ns/140ns
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 92 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 680 W
Produkt ist nicht verfügbar
IXYH40N120C4H1IXYSIGBT Transistors IXYH40N120C4H1
auf Bestellung 370 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.33 EUR
10+ 13.15 EUR
30+ 11.92 EUR
120+ 10.95 EUR
270+ 10.31 EUR
510+ 9.66 EUR
1020+ 8.69 EUR
IXYH40N120C4H1LittelfuseIGBT Transistors IXYH40N120C4H1
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.33 EUR
10+ 13.15 EUR
30+ 11.92 EUR
120+ 10.95 EUR
270+ 10.31 EUR
510+ 9.66 EUR
1020+ 8.69 EUR
IXYH40N120C4H1IXYSDescription: IGBT TRENCH 1200V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 380 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/140ns
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 680 W
auf Bestellung 1020 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.44 EUR
30+ 12.33 EUR
120+ 11.03 EUR
510+ 9.74 EUR
1020+ 8.76 EUR
Mindestbestellmenge: 2
IXYH40N65B3D1IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYH40N65B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
IXYH40N65B3D1IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/140ns
Switching Energy: 800µJ (on), 1.25mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 195 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXYH40N65B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH40N65C3Ixys CorporationTrans IGBT Chip N-CH 650V 80A 300W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH40N65C3IXYSDescription: IGBT 650V 80A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/106ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXYH40N65C3IXYSIGBT Transistors 650V/80A XPT C3-Class TO-247
Produkt ist nicht verfügbar
IXYH40N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Produkt ist nicht verfügbar
IXYH40N65C3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
Produkt ist nicht verfügbar
IXYH40N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH40N65C3D1IXYSDescription: IGBT 650V 80A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/110ns
Switching Energy: 830µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXYH40N65C3H1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXYH40N65C3H1 - IGBT, 40 A, 2.35 V, 300 W, 650 V, TO-247, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung Vce(on): 2.35
DC-Kollektorstrom: 40
Anzahl der Pins: 3
Bauform - Transistor: TO-247
Kollektor-Emitter-Spannung V(br)ceo: 650
Verlustleistung Pd: 300
Betriebstemperatur, max.: 175
Produktpalette: -
SVHC: No SVHC (12-Jan-2017)
Produkt ist nicht verfügbar
IXYH40N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH40N65C3H1IXYSDescription: IGBT 650V 80A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/106ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXYH40N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 80A 300000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH40N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Produkt ist nicht verfügbar
IXYH40N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 80A 300W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH40N65C3H1IXYSIGBT Transistors 650V/80A XPT Copacked TO-247
auf Bestellung 300 Stücke:
Lieferzeit 332-336 Tag (e)
1+19.08 EUR
10+ 16.37 EUR
30+ 12.83 EUR
IXYH40N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
Produkt ist nicht verfügbar
IXYH40N90C3IXYSIGBT Transistors GenX3 900V XPT IGBTs
Produkt ist nicht verfügbar
IXYH40N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH40N90C3IXYSDescription: IGBT 900V 105A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 27ns/78ns
Switching Energy: 1.9mJ (on), 1mJ (off)
Test Condition: 450V, 40A, 5Ohm, 15V
Gate Charge: 74 nC
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
Produkt ist nicht verfügbar
IXYH40N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 90A 500000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH40N90C3D1IXYSIGBT Transistors XPT 900V IGBT GenX3 XPT IGBT
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.81 EUR
10+ 15.28 EUR
30+ 13.85 EUR
120+ 12.72 EUR
270+ 11.97 EUR
510+ 11.23 EUR
1020+ 10.1 EUR
IXYH40N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 90A 500W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH40N90C3D1IXYS/LittelfuseТранзистор IGBT; Uceb, В = 900; Ic = 90 А; Pmax, Вт = 500; Uce(on), В = 2,5; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-247AD
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
1+8.22 EUR
10+ 7.08 EUR
100+ 6.23 EUR
IXYH40N90C3D1IXYSDescription: IGBT 900V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 27ns/78ns
Switching Energy: 1.9mJ (on), 1mJ (off)
Test Condition: 450V, 40A, 5Ohm, 15V
Gate Charge: 74 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
auf Bestellung 923 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.71 EUR
30+ 14.12 EUR
120+ 12.64 EUR
510+ 11.15 EUR
IXYH40N90C3D1LITTELFUSEDescription: LITTELFUSE - IXYH40N90C3D1 - IGBT, 90 A, 2.2 V, 500 W, 900 V, TO-247AD, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.2V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 500W
Bauform - Transistor: TO-247AD
Anzahl der Pins: 3Pin(s)
Produktpalette: PW Series
Kollektor-Emitter-Spannung, max.: 900V
productTraceability: No
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 90A
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 1010 Stücke:
Lieferzeit 14-21 Tag (e)
IXYH40N90C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.47 EUR
8+ 8.98 EUR
9+ 8.49 EUR
Mindestbestellmenge: 6
IXYH40N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 90A 500W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH40N90C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 217 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.47 EUR
8+ 8.98 EUR
9+ 8.49 EUR
Mindestbestellmenge: 6
IXYH40N90C3D1 транзистор
Produktcode: 193543		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXYH50N120C3IXYSDescription: IGBT 1200V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 750 W
Produkt ist nicht verfügbar
IXYH50N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Kind of package: tube
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
IXYH50N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Kind of package: tube
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH50N120C3LittelfuseTrans IGBT Chip N-CH 1200V 100A 750000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH50N120C3IXYSIGBT Transistors XPT IGBT C3-Class 1200V/105A
auf Bestellung 360 Stücke:
Lieferzeit 374-378 Tag (e)
1+18.44 EUR
10+ 16.24 EUR
30+ 14.48 EUR
IXYH50N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 210A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Kind of package: tube
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Power dissipation: 625W
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
5+17.66 EUR
6+ 11.97 EUR
Mindestbestellmenge: 5
IXYH50N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 90A 625000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH50N120C3D1IXYSIGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.72 EUR
10+ 22.7 EUR
30+ 19.94 EUR
60+ 19.91 EUR
120+ 18.67 EUR
IXYH50N120C3D1Ixys CorporationTrans IGBT Chip N-CH 1200V 90A 625W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH50N120C3D1IXYSDescription: IGBT 1200V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 625 W
Produkt ist nicht verfügbar
IXYH50N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 210A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Kind of package: tube
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Power dissipation: 625W
Mounting: THT
Case: TO247-3
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
5+17.66 EUR
6+ 11.97 EUR
Mindestbestellmenge: 5
IXYH50N170CIXYSIGBT Transistors 1700V/178A High Volt
Produkt ist nicht verfügbar
IXYH50N65C3LittelfuseTrans IGBT Chip N-CH 650V 132A 600W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH50N65C3IXYSDescription: IGBT 650V 130A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Produkt ist nicht verfügbar
IXYH50N65C3IXYSIGBT Transistors 650V/130A XPT C3-Class TO-247
Produkt ist nicht verfügbar
IXYH50N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Produkt ist nicht verfügbar
IXYH50N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH50N65C3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
Produkt ist nicht verfügbar
IXYH50N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Produkt ist nicht verfügbar
IXYH50N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH50N65C3D1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH50N65C3D1IXYSDescription: IGBT
Produkt ist nicht verfügbar
IXYH50N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 130A 600W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH50N65C3H1IXYSDescription: IGBT 650V 130A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
auf Bestellung 974 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.8 EUR
30+ 16.83 EUR
120+ 15.84 EUR
510+ 14.36 EUR
IXYH50N65C3H1IXYSIGBT Transistors 650V/130A XPTI C3-Class TO-247
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.66 EUR
10+ 18.2 EUR
30+ 16.72 EUR
120+ 15.73 EUR
270+ 14.27 EUR
510+ 13.96 EUR
1020+ 13.08 EUR
IXYH50N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 250A
Turn-on time: 56ns
Turn-off time: 142ns
Type of transistor: IGBT
Power dissipation: 600W
Gate charge: 80nC
Technology: GenX3™; Planar; XPT™
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
auf Bestellung 288 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.07 EUR
8+ 9.41 EUR
9+ 8.89 EUR
Mindestbestellmenge: 6
IXYH50N65C3H1
Produktcode: 189326		Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247AD
Vces: 650 V
Vce: 2,1 V
Ic 25: 130 A
Ic 100: 50 A
td(on)/td(off) 100-150 Grad: 22/80
auf Bestellung 30 Stück:
Lieferzeit 21-28 Tag (e)
IXYH50N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 250A
Turn-on time: 56ns
Turn-off time: 142ns
Type of transistor: IGBT
Power dissipation: 600W
Gate charge: 80nC
Technology: GenX3™; Planar; XPT™
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 288 Stücke:
Lieferzeit 7-14 Tag (e)
6+13.07 EUR
8+ 9.41 EUR
9+ 8.89 EUR
Mindestbestellmenge: 6
IXYH55N120A4IXYSDescription: IGBT GENX4 1200V 55A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/300ns
Switching Energy: 2.3mJ (on), 5.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 650 W
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.72 EUR
IXYH55N120A4IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXYH55N120A4 - IGBT, 175 A, 1.5 V, 650 W, 1.2 kV, TO-247, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.5
DC-Kollektorstrom: 175
Anzahl der Pins: 3
Bauform - Transistor: TO-247
Kollektor-Emitter-Spannung V(br)ceo: 1.2
Verlustleistung Pd: 650
Betriebstemperatur, max.: 175
Produktpalette: XPT GenX4
SVHC: No SVHC (16-Jan-2020)
Produkt ist nicht verfügbar
IXYH55N120A4IXYSIGBT Transistors IGBT XPT GEN 4 1200V TO247
auf Bestellung 1603 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.87 EUR
10+ 18.37 EUR
30+ 14.94 EUR
60+ 13.6 EUR
120+ 13.09 EUR
270+ 12.8 EUR
IXYH55N120A4LittelfuseDiscrete IGBT XPT Gen 4 1200V TO247
Produkt ist nicht verfügbar
IXYH55N120B4H1IXYSDescription: IGBT TRENCH 1200V 138A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/215ns
Switching Energy: 3.4mJ (on), 2.75mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 138 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 310 A
Power - Max: 650 W
Produkt ist nicht verfügbar
IXYH55N120B4H1IXYSIGBT Transistors IXYH55N120B4H1
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.71 EUR
10+ 15.19 EUR
30+ 13.76 EUR
120+ 12.64 EUR
270+ 11.9 EUR
510+ 11.14 EUR
1020+ 10.03 EUR
IXYH55N120C4IXYSDescription: IGBT 1200V 140A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 3.5mJ (on), 1.34mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 114 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 650 W
auf Bestellung 391 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.75 EUR
30+ 10.98 EUR
120+ 9.82 EUR
Mindestbestellmenge: 2
IXYH55N120C4IXYSIGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247
auf Bestellung 338 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.85 EUR
10+ 11.86 EUR
30+ 10.75 EUR
120+ 9.89 EUR
270+ 9.29 EUR
510+ 8.73 EUR
1020+ 7.83 EUR
IXYH55N120C4LITTELFUSEDescription: LITTELFUSE - IXYH55N120C4 - IGBT, 140 A, 2.1 V, 650 W, 1.2 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.1V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 650W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: XPT Gen 4 Series
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 140A
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
IXYH55N120C4H1IXYSIGBT Transistors IXYH55N120C4H1
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.71 EUR
10+ 15.19 EUR
30+ 10.88 EUR
IXYH55N120C4H1IXYSDescription: IGBT TRENCH 1200V 126A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 180 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 3.5mJ (on), 1.34mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 114 nC
Current - Collector (Ic) (Max): 126 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 650 W
Produkt ist nicht verfügbar
IXYH60N90C3IXYSIXYH60N90C3 THT IGBT transistors
auf Bestellung 233 Stücke:
Lieferzeit 7-14 Tag (e)
8+10 EUR
11+ 6.81 EUR
12+ 6.44 EUR
Mindestbestellmenge: 8
IXYH60N90C3IXYSDescription: IGBT 900V 140A 750W C3 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 30ns/87ns
Switching Energy: 2.7mJ (on), 1.55mJ (off)
Test Condition: 450V, 60A, 3Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 310 A
Power - Max: 750 W
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.82 EUR
10+ 11.85 EUR
Mindestbestellmenge: 2
IXYH60N90C3LittelfuseTrans IGBT Chip N-CH 900V 140A 750000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH60N90C3IXYSIGBT Transistors 900V 60A 2.7V XPT IGBT GenX3
auf Bestellung 344 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.55 EUR
10+ 11.92 EUR
30+ 11.32 EUR
120+ 10.37 EUR
270+ 9.4 EUR
510+ 8.82 EUR
1020+ 8.31 EUR
IXYH75N120B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH75N120B4IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 66 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 22ns/182ns
Switching Energy: 4.5mJ (on), 2.7mJ (off)
Test Condition: 600V, 50A, 3Ohm, 15V
Gate Charge: 157 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 1150 W
Produkt ist nicht verfügbar
IXYH75N120B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
IXYH75N65C3IXYSIGBT Transistors 650V/170A XPT C3-Class TO-247
Produkt ist nicht verfügbar
IXYH75N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Anzahl je Verpackung: 300 Stücke
Produkt ist nicht verfügbar
IXYH75N65C3IXYSDescription: IGBT 650V 170A 750W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/93ns
Switching Energy: 2.8mJ (on), 1mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
Produkt ist nicht verfügbar
IXYH75N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Produkt ist nicht verfügbar
IXYH75N65C3D1IXYSDescription: IGBT PT 650V 175A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/93ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 122 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
Produkt ist nicht verfügbar
IXYH75N65C3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
Produkt ist nicht verfügbar
IXYH75N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 170A 750000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH75N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH75N65C3H1IXYSIGBT Transistors 650V/170A XPT C3-Class TO-247
auf Bestellung 179 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.46 EUR
10+ 24.2 EUR
30+ 20.66 EUR
60+ 19.94 EUR
120+ 19.27 EUR
270+ 19.22 EUR
510+ 18.2 EUR
IXYH75N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Produkt ist nicht verfügbar
IXYH75N65C3H1IXYSDescription: IGBT 650V 170A 750W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/93ns
Switching Energy: 2.8mJ (on), 1mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
auf Bestellung 453 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.26 EUR
30+ 22.06 EUR
120+ 20.76 EUR
IXYH80N90C3IXYSIGBT Transistors IGBT XPT-GENX3
auf Bestellung 515 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.94 EUR
30+ 17.86 EUR
510+ 17.51 EUR
IXYH80N90C3IXYSDescription: IGBT 900V 165A 830W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 34ns/90ns
Switching Energy: 4.3mJ (on), 1.9mJ (off)
Test Condition: 450V, 80A, 2Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 830 W
Produkt ist nicht verfügbar
IXYH80N90C3LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH80N90C3LittelfuseTrans IGBT Chip N-CH 900V 165A 830W 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH80N90C3IXYSIXYH80N90C3 THT IGBT transistors
Produkt ist nicht verfügbar
IXYH82N120C3IXYSDescription: IGBT 1200V 200A 1250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 29ns/192ns
Switching Energy: 4.95mJ (on), 2.78mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 215 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 1250 W
Produkt ist nicht verfügbar
IXYH82N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 295ns
Produkt ist nicht verfügbar
IXYH82N120C3LittelfuseTrans IGBT Chip N-CH 1200V 200A 1250000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH82N120C3LittelfuseTrans IGBT Chip N-CH 1200V 200A 1250W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH82N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 295ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH82N120C3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXYH82N120C3 - IGBT, 82 A, 3.2 V, 1.25 kW, 1.2 kV, TO-247AD, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 3.2V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.25kW
Bauform - Transistor: TO-247AD
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 82A
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
IXYH82N120C3IXYSIGBT Transistors XPT IGBT C3-Class 1200V/160A
auf Bestellung 184 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.66 EUR
10+ 31.64 EUR
IXYH85N120A4IXYSIGBT Transistors IGBT XPT GEN 4 1200V TO247
auf Bestellung 1656 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.73 EUR
10+ 27.97 EUR
30+ 26.28 EUR
60+ 25.43 EUR
120+ 24.18 EUR
270+ 23.28 EUR
510+ 20.75 EUR
IXYH85N120A4
Produktcode: 197385		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXYH85N120A4IXYSDescription: IGBT GENX4 1200V 85A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/400ns
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Test Condition: 600V, 60A, 5Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 520 A
Power - Max: 1150 W
auf Bestellung 630 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.3 EUR
10+ 28.46 EUR
100+ 24.61 EUR
500+ 22.31 EUR
IXYH85N120A4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 85A
Pulsed collector current: 520A
Turn-on time: 73ns
Turn-off time: 990ns
Type of transistor: IGBT
Power dissipation: 1.15kW
Gate charge: 200nC
Technology: GenX4™; Trench™; XPT™
Case: TO247-3
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
IXYH85N120A4LittelfuseUltra Low-Vsat IGBT
Produkt ist nicht verfügbar
IXYH85N120A4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 85A
Pulsed collector current: 520A
Turn-on time: 73ns
Turn-off time: 990ns
Type of transistor: IGBT
Power dissipation: 1.15kW
Gate charge: 200nC
Technology: GenX4™; Trench™; XPT™
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH85N120A4IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXYH85N120A4 - IGBT, 300 A, 1.5 V, 1.15 kW, 1.2 kV, TO-247, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.5
DC-Kollektorstrom: 300
Anzahl der Pins: 3
Bauform - Transistor: TO-247
Kollektor-Emitter-Spannung V(br)ceo: 1.2
Verlustleistung Pd: 1.15
Betriebstemperatur, max.: 175
Produktpalette: XPT GenX4
SVHC: No SVHC (16-Jan-2020)
Produkt ist nicht verfügbar
IXYH85N120C4IXYSDescription: IGBT 1200V 85A GEN4 XPT TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 35ns/280ns
Switching Energy: 4.3mJ (on), 2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 192 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 1150 W
auf Bestellung 621 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.3 EUR
10+ 19.65 EUR
100+ 16.99 EUR
500+ 15.4 EUR
IXYH85N120C4LITTELFUSEDescription: LITTELFUSE - IXYH85N120C4 - IGBT, 240 A, 2 V, 1.15 kW, 1.2 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.15kW
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: XPT Gen 4 Series
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 240A
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
IXYH85N120C4IXYSIGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.91 EUR
10+ 19.31 EUR
30+ 18.8 EUR
60+ 17.72 EUR
120+ 16.68 EUR
270+ 15.95 EUR
510+ 14.87 EUR
IXYH8N250CIXYSIXYH8N250C THT IGBT transistors
Produkt ist nicht verfügbar
IXYH8N250CIXYSDescription: IGBT 2500V 29A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
Produkt ist nicht verfügbar
IXYH8N250CLittelfuseIXYH8N250C
Produkt ist nicht verfügbar
IXYH8N250CHVIXYSIXYH8N250CHV THT IGBT transistors
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
2+36.04 EUR
3+ 24.91 EUR
4+ 23.55 EUR
Mindestbestellmenge: 2
IXYH8N250CHVIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
auf Bestellung 588 Stücke:
Lieferzeit 10-14 Tag (e)
1+39.67 EUR
10+ 35.25 EUR
30+ 35.01 EUR
IXYH8N250CHVIXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247HV
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
Produkt ist nicht verfügbar
IXYH8N250CHVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
auf Bestellung 5010 Stücke:
Lieferzeit 14-21 Tag (e)
IXYH8N250CHVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH8N250CV1HVIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
Produkt ist nicht verfügbar
IXYH8N250CV1HVIXYSDescription: IGBT 2500V 29A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
Produkt ist nicht verfügbar
IXYH8N250CV1HVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYH8N250CV1HVIXYSIXYH8N250CV1HV THT IGBT transistors
Produkt ist nicht verfügbar
IXYH90N65A5LITTELFUSEDescription: LITTELFUSE - IXYH90N65A5 - IGBT, 220 A, 1.22 V, 650 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
hazardous: false
Kollektor-Emitter-Sättigungsspannung: 1.22
usEccn: EAR99
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.22
Verlustleistung Pd: 650
euEccn: NLR
Verlustleistung: 650
Bauform - Transistor: TO-247
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 650
Anzahl der Pins: 3
Produktpalette: XPT GenX5 Series
Kollektor-Emitter-Spannung, max.: 650
DC-Kollektorstrom: 220
Betriebstemperatur, max.: 175
Kontinuierlicher Kollektorstrom: 220
SVHC: No SVHC (17-Jan-2022)
Produkt ist nicht verfügbar
IXYH90N65A5IXYSIGBT Transistors XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247
auf Bestellung 325 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.24 EUR
10+ 17.39 EUR
25+ 16.56 EUR
100+ 14.4 EUR
600+ 12.53 EUR
1200+ 11.05 EUR
2700+ 10.68 EUR
IXYH90N65A5IXYSDescription: IGBT 650V 90A X5 XPT TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/420ns
Switching Energy: 1.3mJ (on), 3.4mJ (off)
Test Condition: 400V, 50A, 5Ohm, 15V
Gate Charge: 260 nC
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 650 W
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.38 EUR
IXYJ20N120C3D1IXYSDescription: IGBT 1200V 21A 105W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: ISO247
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 105 W
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
IXYJ20N120C3D1IXYSIGBT Transistors XPT 1200V IGBT GenX7 XPT IGBT
Produkt ist nicht verfügbar
IXYJ20N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 21A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 90ns
Produkt ist nicht verfügbar
IXYJ20N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 21A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 90ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYJ20N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 21A 105000mW 3-Pin(3+Tab) TO-247 ISO
Produkt ist nicht verfügbar
IXYK100N120B3LittelfuseTrans IGBT Chip N-CH 1200V 225A 1150000mW
Produkt ist nicht verfügbar
IXYK100N120B3IXYSLittelfuse
Produkt ist nicht verfügbar
IXYK100N120C3LittelfuseTrans IGBT Chip N-CH 1200V 188A 1150mW 3-Pin(3+Tab) TO-264AA
Produkt ist nicht verfügbar
IXYK100N120C3IXYSIGBT Transistors 1200V 188A XPT IGBT
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
1+43.28 EUR
10+ 39.92 EUR
25+ 38.1 EUR
100+ 34.07 EUR
IXYK100N120C3IXYSDescription: IGBT 1200V 188A 1150W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 32ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 188 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 490 A
Power - Max: 1150 W
auf Bestellung 81 Stücke:
Lieferzeit 10-14 Tag (e)
1+46.31 EUR
10+ 42.71 EUR
IXYK100N120C3LittelfuseTrans IGBT Chip N-CH 1200V 188A 1150000mW 3-Pin(3+Tab) TO-264AA
Produkt ist nicht verfügbar
IXYK100N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
Produkt ist nicht verfügbar
IXYK100N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
Produkt ist nicht verfügbar
IXYK100N65B3D1IXYSDescription: IGBT 650V 225A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: TO-264
Td (on/off) @ 25°C: 29ns/150ns
Switching Energy: 1.27mJ (on), 2mJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 830 W
Produkt ist nicht verfügbar
IXYK100N65B3D1LittelfuseXPTTM 650V IGBT IXYK100N65B3D1
Produkt ist nicht verfügbar
IXYK100N65B3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-264(3)
Produkt ist nicht verfügbar
IXYK110N120A4LITTELFUSEDescription: LITTELFUSE - IXYK110N120A4 - IGBT, 375 A, 1.45 V, 1.36 kW, 1.2 kV, TO-264, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: TBA
hazardous: false
rohsPhthalatesCompliant: TBA
Kollektor-Emitter-Sättigungsspannung: 1.45
usEccn: EAR99
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.45
Verlustleistung Pd: 1.36
euEccn: NLR
Verlustleistung: 1.36
Bauform - Transistor: TO-264
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 1.2
Anzahl der Pins: 3
Produktpalette: XPT GenX4 Series
Kollektor-Emitter-Spannung, max.: 1.2
productTraceability: No
DC-Kollektorstrom: 375
Betriebstemperatur, max.: 175
Kontinuierlicher Kollektorstrom: 375
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
IXYK110N120A4IXYSIGBT Transistors IGBT XPT-GEN4 1200V 110A
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)
1+62.11 EUR
10+ 58.68 EUR
25+ 53.12 EUR
IXYK110N120A4IXYSDescription: IGBT 1200V 110A GENX4 XPT TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
auf Bestellung 1132 Stücke:
Lieferzeit 10-14 Tag (e)
1+61.67 EUR
25+ 51.13 EUR
100+ 47.93 EUR
IXYK110N120B4IXYSIGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264
auf Bestellung 219 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.93 EUR
10+ 30.66 EUR
25+ 26.05 EUR
100+ 25.59 EUR
250+ 25.34 EUR
500+ 21.96 EUR
IXYK110N120B4IXYSDescription: IGBT 1200V 110A GEN4 XPT TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 45ns/390ns
Switching Energy: 3.6mJ (on), 3.85mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1360 W
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.7 EUR
IXYK110N120C4IXYSDescription: IGBT 1200V 110A GEN4 XPT TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 740 A
Power - Max: 1360 W
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.7 EUR
IXYK110N120C4IXYSIGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.93 EUR
10+ 30.66 EUR
25+ 26.05 EUR
100+ 25.59 EUR
250+ 25.33 EUR
500+ 21.96 EUR
IXYK120N120B3IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYK120N120B3IXYSDescription: DISC IGBT XPT-GENX3 TO-264(3)
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/340ns
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 400 nC
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1500 W
Produkt ist nicht verfügbar
IXYK120N120C3LITTELFUSEDescription: LITTELFUSE - IXYK120N120C3 - TRANSISTOR, IGBT, 1.2KV, 240A, TO-264
tariffCode: 85412900
Transistormontage: Through Hole
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.55
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.5
Bauform - Transistor: TO-264
Anzahl der Pins: 3
Produktpalette: XPT GenX3 Series
Kollektor-Emitter-Spannung, max.: 1.2
productTraceability: No
Betriebstemperatur, max.: 175
directShipCharge: 25
Kontinuierlicher Kollektorstrom: 240
SVHC: To Be Advised
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
IXYK120N120C3LittelfuseTrans IGBT Chip N-CH 1200V 220A 1500000mW 3-Pin(3+Tab) TO-264
Produkt ist nicht verfügbar
IXYK120N120C3IXYSDescription: IGBT 1200V 240A 1500W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
IXYK120N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
3+26.11 EUR
Mindestbestellmenge: 3
IXYK120N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 270 Stücke:
Lieferzeit 7-14 Tag (e)
3+26.11 EUR
Mindestbestellmenge: 3
IXYK120N120C3LittelfuseTrans IGBT Chip N-CH 1200V 240A 1500W 3-Pin(3+Tab) TO-264
Produkt ist nicht verfügbar
IXYK120N120C3IXYSIGBT Transistors 1200V 220A XPT IGBT
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
1+44.23 EUR
10+ 42.43 EUR
25+ 39.42 EUR
IXYK140N120A4IXYSIGBT Transistors IGBT XPT-GENX4
auf Bestellung 2215 Stücke:
Lieferzeit 10-14 Tag (e)
1+62.59 EUR
10+ 59.19 EUR
25+ 52.45 EUR
50+ 51.57 EUR
100+ 48.96 EUR
250+ 48.95 EUR
IXYK140N120A4LittelfuseUltra Low-Vsat IGBT
Produkt ist nicht verfügbar
IXYK140N120A4IXYSDescription: IGBT 140A 1200V TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
auf Bestellung 92 Stücke:
Lieferzeit 10-14 Tag (e)
1+63.01 EUR
25+ 52.8 EUR
IXYK140N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 840A
Turn-on time: 122ns
Turn-off time: 0.3µs
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 330nC
Technology: GenX3™; Planar; XPT™
Case: TO264
Produkt ist nicht verfügbar
IXYK140N90C3IXYSIGBT Transistors IGBT XPT-GENX3
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.8 EUR
10+ 30.32 EUR
25+ 27.97 EUR
50+ 27.39 EUR
100+ 26.31 EUR
250+ 25.54 EUR
500+ 24.9 EUR
IXYK140N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 840A
Turn-on time: 122ns
Turn-off time: 0.3µs
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 330nC
Technology: GenX3™; Planar; XPT™
Case: TO264
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYK140N90C3IXYSDescription: IGBT 900V 310A 1630W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 40ns/145ns
Switching Energy: 4.3mJ (on), 4mJ (off)
Test Condition: 450V, 100A, 1Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1630 W
auf Bestellung 586 Stücke:
Lieferzeit 10-14 Tag (e)
1+34.83 EUR
25+ 28.21 EUR
100+ 26.55 EUR
500+ 24.06 EUR
IXYK200N65B3IXYSIXYK200N65B3 THT IGBT transistors
Produkt ist nicht verfügbar
IXYK300N65A3LittelfuseIGBT Transistors IGBT DISC XPT
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+60.26 EUR
10+ 55.56 EUR
25+ 49.53 EUR
100+ 47.2 EUR
250+ 47.15 EUR
500+ 45.36 EUR
1000+ 44.74 EUR
IXYK30N170CV1IXYSDescription: DISC IGBT XPT-HI VOLTAGE TO-264(
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 33 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 30A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/143ns
Switching Energy: 3.6mJ (on), 1.8mJ (off)
Test Condition: 850V, 30A, 2.7Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 937 W
Produkt ist nicht verfügbar
IXYK85N120C4H1LittelfuseIGBT Transistors IXYK85N120C4H1
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.26 EUR
10+ 34.02 EUR
25+ 31.72 EUR
50+ 30.75 EUR
100+ 29.74 EUR
250+ 27.76 EUR
500+ 25.54 EUR
IXYK85N120C4H1IXYSDescription: IGBT TRENCH 1200V 220A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 265 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
Supplier Device Package: SOT-227B
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/280ns
Switching Energy: 4.3mJ (on), 2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 192 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 1150 W
auf Bestellung 294 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.02 EUR
25+ 31.52 EUR
100+ 29.55 EUR
IXYK85N120C4H1IXYSIGBT Transistors IXYK85N120C4H1
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.26 EUR
10+ 34.02 EUR
25+ 31.72 EUR
50+ 30.75 EUR
100+ 29.74 EUR
250+ 27.76 EUR
500+ 25.54 EUR
IXYL40N250CV1IXYSDescription: IGBT 2500V 70A ISOPLUSI5
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: ISOPLUSi5-Pak™
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 11.7mJ (on), 6.9mJ (off)
Test Condition: 1250V, 40A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 577 W
auf Bestellung 725 Stücke:
Lieferzeit 10-14 Tag (e)
1+139.6 EUR
10+ 127.45 EUR
100+ 115.29 EUR
IXYL40N250CV1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 577W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 577W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYL40N250CV1IXYSIGBT Transistors IGBT XPT-HI VOLTAGE
Produkt ist nicht verfügbar
IXYL40N250CV1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 577W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 577W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
IXYL60N450IXYSIGBT Transistors IGBT XPT-HI VOLTAGE
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
1+199.94 EUR
10+ 193.65 EUR
IXYL60N450LittelfuseHigh Voltage IGBT
Produkt ist nicht verfügbar
IXYL60N450LITTELFUSEDescription: LITTELFUSE - IXYL60N450 - TRANS, IGBT, 4.5KV, 90A, ISOPLUS I5-PAK
Kollektor-Emitter-Spannung, max.: 4.5
Verlustleistung: 417
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 90
Bauform - Transistor: ISOPLUS i5-PAK
Kollektor-Emitter-Sättigungsspannung: 2.64
Betriebstemperatur, max.: 150
Produktpalette: XPT Series
SVHC: To Be Advised
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
IXYL60N450IXYSDescription: IGBT 4500V 90A 417W I5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 60A
Supplier Device Package: ISOPLUSi5-Pak™
Td (on/off) @ 25°C: 55ns/450ns
Test Condition: 960V, 60A, 4.7Ohm, 15V
Gate Charge: 366 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 680 A
Power - Max: 417 W
auf Bestellung 1151 Stücke:
Lieferzeit 10-14 Tag (e)
1+206.84 EUR
10+ 191.46 EUR
IXYL60N450IXYSIXYL60N450 THT IGBT transistors
Produkt ist nicht verfügbar
IXYN100N120B3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 76A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 76A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Power dissipation: 690W
Technology: GenX3™; XPT™
Mechanical mounting: screw
Produkt ist nicht verfügbar
IXYN100N120B3H1LittelfuseTrans IGBT Chip N-CH 1200V 165A 690W 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXYN100N120B3H1IXYSDescription: IGBT MOD 1200V 165A 690W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
1+65.67 EUR
10+ 61.27 EUR
IXYN100N120B3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 76A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 76A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Power dissipation: 690W
Technology: GenX3™; XPT™
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYN100N120B3H1IXYSIGBT Transistors IGBT XPT-GENX3 SOT-227UI(
Produkt ist nicht verfügbar
IXYN100N120B3H1LittelfuseTrans IGBT Chip N-CH 1200V 165A 690000mW 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXYN100N120C3IXYSDescription: IGBT MOD 1200V 152A 830W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 152 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+80.59 EUR
IXYN100N120C3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Power dissipation: 830W
Technology: GenX3™; XPT™
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYN100N120C3IXYSIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
auf Bestellung 17 Stücke:
Lieferzeit 326-330 Tag (e)
1+77.19 EUR
10+ 72.02 EUR
30+ 68.99 EUR
IXYN100N120C3LittelfuseTrans IGBT Module N-CH 1200V 152A 830000mW
Produkt ist nicht verfügbar
IXYN100N120C3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Power dissipation: 830W
Technology: GenX3™; XPT™
Mechanical mounting: screw
Produkt ist nicht verfügbar
IXYN100N120C3LittelfuseTrans IGBT Chip N-CH 1200V 152A 830000mW
Produkt ist nicht verfügbar
IXYN100N120C3H1LittelfuseTrans IGBT Chip N-CH 1200V 134A 690000mW 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXYN100N120C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 62A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Power dissipation: 690W
Technology: GenX3™; XPT™
Mechanical mounting: screw
Produkt ist nicht verfügbar
IXYN100N120C3H1LittelfuseTrans IGBT Chip N-CH 1200V 140A 690W 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXYN100N120C3H1IXYSDescription: IGBT MOD 1200V 134A 690W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
Produkt ist nicht verfügbar
IXYN100N120C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 62A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Power dissipation: 690W
Technology: GenX3™; XPT™
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYN100N120C3H1IXYSIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
auf Bestellung 10 Stücke:
Lieferzeit 451-455 Tag (e)
1+93.93 EUR
30+ 89.46 EUR
100+ 86.38 EUR
IXYN100N65A3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Collector current: 100A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
IXYN100N65A3LittelfuseIGBT Module, 650V IGBT Gen X3TM
Produkt ist nicht verfügbar
IXYN100N65A3IXYSDescription: IGBT MOD 650V 170A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 25 µA
Produkt ist nicht verfügbar
IXYN100N65A3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Collector current: 100A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYN100N65A3IXYSIGBT Transistors IGBT XPT-GENX3 (MINI
auf Bestellung 582 Stücke:
Lieferzeit 536-540 Tag (e)
1+66.58 EUR
10+ 59.33 EUR
IXYN100N65B3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 SOT-227UI(mini
Produkt ist nicht verfügbar
IXYN100N65B3D1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Collector current: 100A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
IXYN100N65B3D1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Collector current: 100A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYN100N65B3D1IXYSDescription: DISC IGBT XPT-GENX3 SOT-227UI(MI
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 185 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.74 nF @ 25 V
Produkt ist nicht verfügbar
IXYN100N65C3H1LITTELFUSEDescription: LITTELFUSE - IXYN100N65C3H1 - IGBT-Modul, Einfach, 160 A, 1.8 V, 600 W, 175 °C, SOT-227B
tariffCode: 85412900
Transistormontage: Platte
rohsCompliant: YES
IGBT-Technologie: -
Sperrschichttemperatur Tj, max.: 175°C
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.8V
Dauer-Kollektorstrom: 160A
usEccn: EAR99
IGBT-Anschluss: Stiftbolzen
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.8V
Verlustleistung Pd: 600W
euEccn: NLR
Verlustleistung: 600W
Bauform - Transistor: SOT-227B
Kollektor-Emitter-Spannung V(br)ceo: 650V
Produktpalette: PW Series
Kollektor-Emitter-Spannung, max.: 650V
IGBT-Konfiguration: Einfach
productTraceability: No
DC-Kollektorstrom: 160A
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
IXYN100N65C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W
Technology: GenX3™; XPT™
Collector current: 90A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
IXYN100N65C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W
Technology: GenX3™; XPT™
Collector current: 90A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYN100N65C3H1IXYSDescription: IGBT MOD 650V 166A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 166 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.98 nF @ 25 V
Produkt ist nicht verfügbar
IXYN100N65C3H1IXYSIGBT Transistors 650V/166A XPT Copacked SOT-227B
auf Bestellung 300 Stücke:
Lieferzeit 332-336 Tag (e)
1+54.52 EUR
10+ 48.66 EUR
20+ 48.47 EUR
IXYN100N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 160A 600W 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXYN110N120A4IXYSDescription: IGBT PT 1200V 275A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 950 A
Power - Max: 830 W
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
1+73.81 EUR
10+ 65.77 EUR
IXYN110N120A4IXYSIGBT Transistors IGBT XPT-GEN4 1200V 110A
auf Bestellung 207 Stücke:
Lieferzeit 10-14 Tag (e)
1+74.32 EUR
10+ 62.55 EUR
20+ 60.9 EUR
50+ 57.64 EUR
100+ 56.25 EUR
200+ 55.21 EUR
500+ 53.45 EUR
IXYN110N120B4H1IXYSIGBT Modules IXYN110N120B4H1
auf Bestellung 277 Stücke:
Lieferzeit 374-378 Tag (e)
1+73.99 EUR
10+ 56.99 EUR
IXYN110N120B4H1IXYSDescription: 1200V,110A, XPT GEN4 B4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 218 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5460 pF @ 25 V
Produkt ist nicht verfügbar
IXYN110N120B4H1LittelfuseIGBT Modules IXYN110N120B4H1
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)
1+75.47 EUR
10+ 64.15 EUR
20+ 61.99 EUR
50+ 59.91 EUR
100+ 57.85 EUR
200+ 55.77 EUR
500+ 53.2 EUR
IXYN110N120C4IXYSIGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT SOT227B
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
1+62.55 EUR
10+ 53.17 EUR
20+ 50.88 EUR
50+ 49.3 EUR
100+ 47.71 EUR
200+ 44.86 EUR
IXYN110N120C4IXYSDescription: IGBT 1200V 110A GEN4 XPT SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5.42 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+60.39 EUR
IXYN110N120C4H1IXYSIGBT Modules IXYN110N120C4H1
auf Bestellung 306 Stücke:
Lieferzeit 10-14 Tag (e)
1+73.97 EUR
10+ 65.91 EUR
20+ 61.99 EUR
50+ 59.91 EUR
IXYN110N120C4H1LittelfuseIGBT Modules IXYN110N120C4H1
auf Bestellung 398 Stücke:
Lieferzeit 10-14 Tag (e)
1+73.97 EUR
10+ 65.91 EUR
20+ 61.99 EUR
50+ 59.91 EUR
IXYN110N120C4H1IXYSDescription: 1200V, 110A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5420 pF @ 25 V
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
1+73.46 EUR
10+ 65.45 EUR
100+ 57.45 EUR
IXYN120N120C3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Collector current: 120A
Power dissipation: 1.2kW
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYN120N120C3IXYSDescription: IGBT MOD 1200V 240A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: SOT-227B - miniBLOC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1200 W
Current - Collector Cutoff (Max): 25 µA
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
IXYN120N120C3LittelfuseTrans IGBT Module N-CH 1200V 240A 1200000mW
Produkt ist nicht verfügbar
IXYN120N120C3IXYSIGBT Transistors IGBT XPT-GENX3 (MINI
auf Bestellung 320 Stücke:
Lieferzeit 10-14 Tag (e)
1+61.95 EUR
10+ 55.19 EUR
20+ 51.9 EUR
50+ 50.16 EUR
100+ 48.45 EUR
500+ 48.03 EUR
IXYN120N120C3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Collector current: 120A
Power dissipation: 1.2kW
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
IXYN120N65B3D1IXYSDescription: IGBT MODULE DISC IGBT SOT-227UI
Produkt ist nicht verfügbar
IXYN120N65B3D1LittelfuseTrans IGBT Module N-CH 650V 250A 830000mW
Produkt ist nicht verfügbar
IXYN120N65B3D1LittelfuseTrans IGBT Module N-CH 650V 250A 830000mW
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
2+94.89 EUR
10+ 86.14 EUR
25+ 79.13 EUR
50+ 71.36 EUR
100+ 65.35 EUR
Mindestbestellmenge: 2
IXYN120N65B3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 SOT-227UI(mini
Produkt ist nicht verfügbar
IXYN120N65C3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 SOT-227UI(mini
Produkt ist nicht verfügbar
IXYN120N65C3D1IXYSDescription: IGBT PT 650V 190A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/127ns
Switching Energy: 1.25mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 265 nC
Current - Collector (Ic) (Max): 190 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 620 A
Power - Max: 830 W
Produkt ist nicht verfügbar
IXYN140N120A4IXYSDescription: IGBT 140A 1200V SOT227B MINIBLOC
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1070 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8.3 nF @ 25 V
Produkt ist nicht verfügbar
IXYN140N120A4IXYSIGBT Transistors IGBT XPT-GENX4
auf Bestellung 184 Stücke:
Lieferzeit 10-14 Tag (e)
1+78.37 EUR
10+ 69.84 EUR
20+ 65.67 EUR
50+ 63.48 EUR
100+ 61.3 EUR
200+ 59.1 EUR
500+ 56.37 EUR
IXYN140N120A4LittelfuseUltra Low-Vsat IGBT
Produkt ist nicht verfügbar
IXYN150N60B3IXYSIGBT Transistors IGBT XPT-GENX3 (MINI
Produkt ist nicht verfügbar
IXYN150N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Collector current: 140A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 750A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
IXYN150N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Collector current: 140A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 750A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYN150N60B3IXYSDescription: IGBT
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 27ns/167ns
Switching Energy: 4.2mJ (on), 2.6mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 260 nC
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 750 A
Power - Max: 830 W
Produkt ist nicht verfügbar
IXYN300N65A3IXYSDescription: DISC IGBT XPT-GENX3 SOT-227B(MIN
Produkt ist nicht verfügbar
IXYN300N65A3IXYSIGBT Transistors IGBT XPT-GENX3 (MINI
Produkt ist nicht verfügbar
IXYN30N170CV1IXYSDescription: 1700V/85A HIGH VOLTAGE XPT IGBT
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Test Condition: 850V, 30A, 2.7Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 680 W
auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
1+70.89 EUR
10+ 63.18 EUR
100+ 55.45 EUR
IXYN30N170CV1IXYSIXYN30N170CV1 IGBT modules
Produkt ist nicht verfügbar
IXYN30N170CV1IXYSIGBT Modules 1700V/85A High Voltage XPT IGBT
auf Bestellung 365 Stücke:
Lieferzeit 10-14 Tag (e)
1+69.66 EUR
10+ 62.08 EUR
20+ 58.36 EUR
50+ 56.43 EUR
100+ 54.47 EUR
200+ 53.59 EUR
IXYN30N170CV1LittelfuseIGBT Module, High Voltage IGBT w/ Diode
Produkt ist nicht verfügbar
IXYN50N170CV1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 50A; SOT227B
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 485A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: XPT™
Power dissipation: 880W
Case: SOT227B
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
IXYN50N170CV1IXYSDescription: IGBT 1700V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 255 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 22ns/236ns
Switching Energy: 8.7mJ (on), 5.6mJ (off)
Test Condition: 850V, 50A, 1Ohm, 15V
Gate Charge: 260 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 485 A
Power - Max: 880 W
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)
1+90.73 EUR
10+ 82.49 EUR
100+ 74.24 EUR
IXYN50N170CV1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 50A; SOT227B
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 485A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: XPT™
Power dissipation: 880W
Case: SOT227B
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYN50N170CV1LittelfuseTrans IGBT Module N-CH 1700V 120A 880000mW
Produkt ist nicht verfügbar
IXYN50N170CV1IXYSIGBT Transistors 1700V/120A High Volt
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)
1+90.11 EUR
10+ 81.93 EUR
100+ 73.74 EUR
200+ 72.44 EUR
500+ 72.14 EUR
IXYN75N65C3D1IXYSDescription: IGBT 650V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 26ns/93ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 122 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 600 W
Produkt ist nicht verfügbar
IXYN75N65C3D1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Collector current: 75A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYN75N65C3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 SOT-227UI(mini
Produkt ist nicht verfügbar
IXYN75N65C3D1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Collector current: 75A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
IXYN80N90C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 70A; SOT227B; 500W
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 70A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Power dissipation: 500W
Technology: GenX3™; XPT™
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
2+44.97 EUR
Mindestbestellmenge: 2
IXYN80N90C3H1IXYSIGBT Modules 900V 70A 2.7V XPT IGBTs GenX3 w/ Diode
Produkt ist nicht verfügbar
IXYN80N90C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 70A; SOT227B; 500W
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 70A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Power dissipation: 500W
Technology: GenX3™; XPT™
Mechanical mounting: screw
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
2+44.97 EUR
Mindestbestellmenge: 2
IXYN80N90C3H1IXYSDescription: IGBT MOD 900V 115A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 4.55 nF @ 25 V
Produkt ist nicht verfügbar
IXYN80N90C3H1LittelfuseTrans IGBT Module N-CH 900V
Produkt ist nicht verfügbar
IXYN82N120C3IXYSDescription: IGBT MOD 1200V 105A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
1+64.5 EUR
10+ 57.47 EUR
100+ 50.44 EUR
IXYN82N120C3LittelfuseIGBT Module, 1200V XPT IGBT
Produkt ist nicht verfügbar
IXYN82N120C3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 46A; SOT227B
Technology: GenX3™; XPT™
Collector current: 46A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYN82N120C3IXYSIGBT Transistors 1200V XPT IGBT GenX3
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+64.05 EUR
10+ 57.08 EUR
20+ 53.66 EUR
50+ 51.87 EUR
100+ 50.09 EUR
200+ 48.29 EUR
500+ 46.89 EUR
IXYN82N120C3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 46A; SOT227B
Technology: GenX3™; XPT™
Collector current: 46A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
IXYN82N120C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 66A; SOT227B
Technology: GenX3™; XPT™
Collector current: 66A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYN82N120C3H1IXYSIGBT Transistors XPT IGBT C3-Class 1200V/105A; Copack
auf Bestellung 300 Stücke:
Lieferzeit 451-455 Tag (e)
1+80.12 EUR
10+ 71.37 EUR
IXYN82N120C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 66A; SOT227B
Technology: GenX3™; XPT™
Collector current: 66A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
IXYN82N120C3H1LittelfuseTrans IGBT Module N-CH 1200V 105A 500000mW
Produkt ist nicht verfügbar
IXYN82N120C3H1IXYSDescription: IGBT MOD 1200V 105A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.06 nF @ 25 V
Produkt ist nicht verfügbar
IXYN85N120C4H1IXYSDescription: 1200V, 85A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4030 pF @ 25 V
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
1+60.19 EUR
10+ 53.49 EUR
100+ 46.78 EUR
IXYN85N120C4H1IXYSIGBT Modules IXYN85N120C4H1
auf Bestellung 410 Stücke:
Lieferzeit 374-378 Tag (e)
1+60.6 EUR
10+ 53.86 EUR
20+ 50.23 EUR
50+ 48.68 EUR
100+ 47.12 EUR
200+ 43.96 EUR
500+ 40.43 EUR
IXYP10N65B3D1LittelfuseXPTTM 650V IGBT GenX3TM w/Diode
Produkt ist nicht verfügbar
IXYP10N65B3D1IXYSDescription: IGBT PT 650V 32A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/125ns
Switching Energy: 300µJ (on), 200µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 20 nC
Part Status: Active
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 160 W
Produkt ist nicht verfügbar
IXYP10N65B3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-220AB/FP
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.29 EUR
10+ 6.41 EUR
50+ 5.44 EUR
100+ 4.95 EUR
250+ 4.66 EUR
500+ 4.38 EUR
1000+ 3.75 EUR
IXYP10N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 160W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 54A
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 128ns
Produkt ist nicht verfügbar
IXYP10N65C3IXYSDescription: IGBT 650V 30A 160W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 110µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 160 W
Produkt ist nicht verfügbar
IXYP10N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 160W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 54A
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 128ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYP10N65C3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-220AB/FP
Produkt ist nicht verfügbar
IXYP10N65C3D1IXYSDescription: IGBT PT 650V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 110µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 160 W
Produkt ist nicht verfügbar
IXYP10N65C3D1MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 7A; 53W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 7A
Power dissipation: 53W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 128ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.13 EUR
26+ 2.83 EUR
32+ 2.25 EUR
34+ 2.13 EUR
Mindestbestellmenge: 23
IXYP10N65C3D1MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 7A; 53W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 7A
Power dissipation: 53W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 128ns
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.13 EUR
26+ 2.83 EUR
32+ 2.25 EUR
34+ 2.13 EUR
Mindestbestellmenge: 23
IXYP10N65C3D1MIXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-220AB/FP
Produkt ist nicht verfügbar
IXYP10N65C3D1MIXYSDescription: IGBT 650V 15A TO220 ISOL TAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
Supplier Device Package: TO-220 Isolated Tab
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 170µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 53 W
Produkt ist nicht verfügbar
IXYP15N65B3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-220AB/FP
Produkt ist nicht verfügbar
IXYP15N65B3D1IXYSDescription: IGBT TO220AB
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
IXYP15N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 122ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYP15N65C3IXYSDescription: IGBT 650V 38A 200W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXYP15N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 122ns
Produkt ist nicht verfügbar
IXYP15N65C3IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYP15N65C3D1LittelfuseHigh Performance 650V IGBT Chip
Produkt ist nicht verfügbar
IXYP15N65C3D1IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYP15N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYP15N65C3D1IXYSDescription: IGBT 650V 38A 200W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXYP15N65C3D1LittelfuseHigh Performance 650V IGBT Chip
Produkt ist nicht verfügbar
IXYP15N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
Produkt ist nicht verfügbar
IXYP15N65C3D1MIXYSIGBT Transistors 650V/16A XPT IGBT C3 Copacked TO-220
Produkt ist nicht verfügbar
IXYP15N65C3D1MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 57W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 122ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYP15N65C3D1MIXYSDescription: IGBT 650V 16A 48W TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 48 W
Produkt ist nicht verfügbar
IXYP15N65C3D1MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 57W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 122ns
Produkt ist nicht verfügbar
IXYP20N120A4IXYSIGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar
IXYP20N120A4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
Produkt ist nicht verfügbar
IXYP20N120A4Littelfuse1200V IGBT Chip Transistor
Produkt ist nicht verfügbar
IXYP20N120B4IXYSIGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar
IXYP20N120B4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
Produkt ist nicht verfügbar
IXYP20N120C3LittelfuseTrans IGBT Chip N-CH 1200V 40A 278W 3-Pin(3+Tab) TO-220AB
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
17+9.65 EUR
19+ 8.01 EUR
25+ 7.71 EUR
50+ 6.61 EUR
100+ 5.71 EUR
Mindestbestellmenge: 17
IXYP20N120C3IXYSDescription: IGBT 1200V 40A 278W TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
Produkt ist nicht verfügbar
IXYP20N120C3LittelfuseTrans IGBT Chip N-CH 1200V 40A 278000mW 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
IXYP20N120C3LittelfuseTrans IGBT Chip N-CH 1200V 40A 278W 3-Pin(3+Tab) TO-220AB
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
17+9.65 EUR
19+ 8.01 EUR
25+ 7.71 EUR
50+ 6.61 EUR
100+ 5.71 EUR
Mindestbestellmenge: 17
IXYP20N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYP20N120C3IXYSIGBT Transistors GenX3 1200V XPT IGBT
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.45 EUR
10+ 10.24 EUR
50+ 8.2 EUR
IXYP20N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
IXYP20N120C4IXYSIGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar
IXYP20N120C4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 14ns/160ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
auf Bestellung 1300 Stücke:
Lieferzeit 10-14 Tag (e)
IXYP20N65B3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-220AB/FP
Produkt ist nicht verfügbar
IXYP20N65B3D1IXYSDescription: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
Produkt ist nicht verfügbar
IXYP20N65B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 271ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYP20N65B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 271ns
Produkt ist nicht verfügbar
IXYP20N65C3IXYSIGBT Modules IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYP20N65C3IXYSDescription: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 135 ns
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXYP20N65C3D1LittelfuseTrans IGBT Chip N-CH 650V 50A 200000mW 3-Pin(3+Tab) TO-220AB
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
IXYP20N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.79 EUR
22+ 3.39 EUR
27+ 2.72 EUR
28+ 2.57 EUR
Mindestbestellmenge: 19
IXYP20N65C3D1IXYSIGBT Transistors IGBT XPT-GENX3
auf Bestellung 1427 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.97 EUR
10+ 5.03 EUR
50+ 4.73 EUR
100+ 4.07 EUR
250+ 3.84 EUR
500+ 3.61 EUR
1000+ 3.1 EUR
IXYP20N65C3D1LittelfuseTrans IGBT Chip N-CH 650V 50A 200W 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
IXYP20N65C3D1IXYSDescription: IGBT 650V 18A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 135 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXYP20N65C3D1LITTELFUSEDescription: LITTELFUSE - IXYP20N65C3D1 - IGBT, 50 A, 2.27 V, 200 W, 650 V, TO-220AB, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.27V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: PW Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 50A
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 590 Stücke:
Lieferzeit 14-21 Tag (e)
IXYP20N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 209 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.79 EUR
22+ 3.39 EUR
27+ 2.72 EUR
28+ 2.57 EUR
Mindestbestellmenge: 19
IXYP20N65C3D1MIXYSDescription: IGBT 650V 18A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 50 W
Produkt ist nicht verfügbar
IXYP20N65C3D1MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 50W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYP20N65C3D1MLittelfuseTrans IGBT Chip N-CH 650V 18A 50000mW 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
IXYP20N65C3D1MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 50W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
Produkt ist nicht verfügbar
IXYP20N65C3D1MIXYSIGBT Transistors 650V/18A XPT IGBT C3 Copacked TO-220
Produkt ist nicht verfügbar
IXYP24N100A4IXYSIGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar
IXYP24N100A4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/216ns
Switching Energy: 3.5mJ (on), 2.3mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 375 W
Produkt ist nicht verfügbar
IXYP24N100C4IXYSIGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar
IXYP24N100C4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/147ns
Switching Energy: 3.6mJ (on), 1mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 132 A
Power - Max: 375 W
auf Bestellung 650 Stücke:
Lieferzeit 10-14 Tag (e)
300+9.87 EUR
Mindestbestellmenge: 300
IXYP30N120A4IXYSIGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar
IXYP30N120A4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
Produkt ist nicht verfügbar
IXYP30N120B4IXYSIGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar
IXYP30N120B4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
IXYP30N120C3IXYSDescription: IGBT 1200V 75A 500W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 500 W
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
300+10.51 EUR
Mindestbestellmenge: 300
IXYP30N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 500W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
Anzahl je Verpackung: 300 Stücke
Produkt ist nicht verfügbar
IXYP30N120C3LittelfuseTrans IGBT Chip N-CH 1200V 75A 500000mW 3-Pin(3+Tab) TO-220
Produkt ist nicht verfügbar
IXYP30N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 500W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
Produkt ist nicht verfügbar
IXYP30N120C3IXYSIGBT Transistors GenX3 1200V XPT IGBT
auf Bestellung 665 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.52 EUR
10+ 13.68 EUR
50+ 11.6 EUR
100+ 11.19 EUR
500+ 11.18 EUR
1000+ 10.42 EUR
IXYP30N120C4IXYSIGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar
IXYP30N120C4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
IXYP30N65C3IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYP30N65C3IXYSDescription: DISC IGBT XPT-GENX3 TO-220AB/FP
Produkt ist nicht verfügbar
IXYP30N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYP30N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
Produkt ist nicht verfügbar
IXYP50N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYP50N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Produkt ist nicht verfügbar
IXYP50N65C3IXYSIGBT Transistors 650V/130A XPT C3-Class TO-220
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.51 EUR
10+ 10.72 EUR
50+ 9.7 EUR
100+ 8.92 EUR
250+ 8.13 EUR
500+ 7.66 EUR
1000+ 7.08 EUR
IXYP50N65C3IXYSDescription: IGBT 650V 130A 600W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.57 EUR
50+ 10.04 EUR
100+ 8.99 EUR
Mindestbestellmenge: 2
IXYP60N65A5IXYSIGBT Transistors XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO220
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.93 EUR
10+ 10.07 EUR
50+ 8.59 EUR
100+ 7.8 EUR
250+ 7.55 EUR
500+ 6.74 EUR
1000+ 5.9 EUR
IXYP60N65A5LITTELFUSEDescription: LITTELFUSE - IXYP60N65A5 - IGBT, 134 A, 1.23 V, 395 W, 650 V, TO-220, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: TBA
hazardous: false
rohsPhthalatesCompliant: TBA
Kollektor-Emitter-Sättigungsspannung: 1.23
usEccn: EAR99
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.23
Verlustleistung Pd: 395
euEccn: NLR
Verlustleistung: 395
Bauform - Transistor: TO-220
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 650
Anzahl der Pins: 3
Produktpalette: XPT GenX5 Series
Kollektor-Emitter-Spannung, max.: 650
productTraceability: No
DC-Kollektorstrom: 134
Betriebstemperatur, max.: 175
Kontinuierlicher Kollektorstrom: 134
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
IXYP60N65A5IXYSDescription: IGBT PT 650V 134A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
auf Bestellung 307 Stücke:
Lieferzeit 10-14 Tag (e)
IXYP8N90C3IXYSDescription: IGBT 900V 20A 125W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
auf Bestellung 1450 Stücke:
Lieferzeit 10-14 Tag (e)
300+3.93 EUR
Mindestbestellmenge: 300
IXYP8N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Mounting: THT
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Produkt ist nicht verfügbar
IXYP8N90C3IXYSIGBT Transistors XPT 900V IGBT GenX3 XPT IGBT
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.25 EUR
10+ 5.4 EUR
50+ 4.58 EUR
100+ 4.12 EUR
250+ 3.96 EUR
500+ 3.78 EUR
1000+ 3.31 EUR
IXYP8N90C3LittelfuseTrans IGBT Chip N-CH 900V 20A 125000mW 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
IXYP8N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Mounting: THT
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYP8N90C3D1IXYSIGBT Transistors XPT 900V IGBT GenX3 XPT IGBTs
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.54 EUR
10+ 7.52 EUR
50+ 6.37 EUR
100+ 5.79 EUR
250+ 5.39 EUR
500+ 5.19 EUR
1000+ 4.84 EUR
IXYP8N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 20A 125mW 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
IXYP8N90C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Mounting: THT
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 156 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.65 EUR
15+ 5.08 EUR
19+ 3.85 EUR
20+ 3.63 EUR
Mindestbestellmenge: 13
IXYP8N90C3D1IXYSDescription: IGBT 900V 20A 125W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
Produkt ist nicht verfügbar
IXYP8N90C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Mounting: THT
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.65 EUR
15+ 5.08 EUR
19+ 3.85 EUR
20+ 3.63 EUR
Mindestbestellmenge: 13
IXYP8N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 20A 125mW 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
IXYQ30N65B3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-3P (3)
Produkt ist nicht verfügbar
IXYQ40N65B3D1IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYQ40N65C3D1IXYSIGBT Transistors
Produkt ist nicht verfügbar
IXYQ40N65C3D1IXYSDescription: IGBT
Produkt ist nicht verfügbar
IXYR100N120C3LittelfuseTrans IGBT Chip N-CH 1200V 104A 484000mW 3-Pin(3+Tab) ISOPLUS 247
Produkt ist nicht verfügbar
IXYR100N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 484W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
Produkt ist nicht verfügbar
IXYR100N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 484W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
Produkt ist nicht verfügbar
IXYR100N120C3IXYSIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+46.29 EUR
10+ 42.7 EUR
30+ 40.78 EUR
120+ 36.45 EUR
510+ 32.81 EUR
1020+ 32.07 EUR
IXYR100N120C3IXYSDescription: IGBT 1200V 104A 484W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: ISOPLUS247™
Td (on/off) @ 25°C: 32ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 104 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 484 W
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+51.43 EUR
10+ 47.44 EUR
IXYR100N65A3V1IXYSIGBT Modules IGBT PT-LOW FREQUENCY
Produkt ist nicht verfügbar
IXYR100N65A3V1IXYSDescription: IGBT
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
IXYR50N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 56A 290000mW 3-Pin(3+Tab) ISOPLUS 247
Produkt ist nicht verfügbar
IXYR50N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 32A
Pulsed collector current: 210A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Kind of package: tube
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Power dissipation: 290W
Mounting: THT
Case: PLUS247™
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYR50N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 32A
Pulsed collector current: 210A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Kind of package: tube
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Power dissipation: 290W
Mounting: THT
Case: PLUS247™
Produkt ist nicht verfügbar
IXYR50N120C3D1IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYR50N120C3D1IXYSDescription: IGBT 1200V 56A 290W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
Produkt ist nicht verfügbar
IXYT12N250CV1HVIXYSIGBT Transistors DISC IGBT XPT-HI VOLTAGE TO-26
Produkt ist nicht verfügbar
IXYT12N250CV1HVIXYSDescription: DISC IGBT XPT-HI VOLTAGE TO-268A
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
Produkt ist nicht verfügbar
IXYT20N120C3D1HVIXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYT20N120C3D1HVIXYSDescription: IGBT 1200V 36A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 1mJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 230 W
Produkt ist nicht verfügbar
IXYT20N120C3D1HVLittelfuseTrans IGBT Chip N-CH 1200V 36A 230000mW 3-Pin(2+Tab) D3PAK
Produkt ist nicht verfügbar
IXYT20N120C3D1HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 17A
Power dissipation: 230W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYT20N120C3D1HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 17A
Power dissipation: 230W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Produkt ist nicht verfügbar
IXYT25N250CHVIXYSIGBT Transistors 2500V/95A , HV XPT IGBT
auf Bestellung 240 Stücke:
Lieferzeit 346-350 Tag (e)
1+66 EUR
10+ 60.86 EUR
30+ 58.12 EUR
120+ 51.96 EUR
IXYT25N250CHVLittelfuseTrans IGBT Chip N-CH 2500V 95A 937000mW 3-Pin(2+Tab) TO-268HV
Produkt ist nicht verfügbar
IXYT25N250CHVIXYSDescription: IGBT 2500V 95A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-268
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
auf Bestellung 351 Stücke:
Lieferzeit 10-14 Tag (e)
1+58.87 EUR
30+ 48.81 EUR
120+ 45.76 EUR
IXYT25N250CHVIXYSIXYT25N250CHV SMD IGBT transistors
Produkt ist nicht verfügbar
IXYT30N450HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1542ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
IXYT30N450HVIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
auf Bestellung 412 Stücke:
Lieferzeit 339-343 Tag (e)
1+75.24 EUR
10+ 69.08 EUR
IXYT30N450HVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYT30N450HVLittelfuseHigh Voltage XPTTMIGBT
Produkt ist nicht verfügbar
IXYT30N450HVIXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 38ns/168ns
Test Condition: 960V, 30A, 10Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 430 W
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)
1+73.73 EUR
30+ 61.78 EUR
120+ 57.66 EUR
IXYT30N450HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1542ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 300 Stücke
Produkt ist nicht verfügbar
IXYT30N65C3H1HVIXYSDescription: IGBT 650V 60A 270W TO268HV
Produkt ist nicht verfügbar
IXYT30N65C3H1HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYT30N65C3H1HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
Produkt ist nicht verfügbar
IXYT30N65C3H1HVIXYSIGBT Transistors 650V/60A XPT Copacked TO-268HV
Produkt ist nicht verfügbar
IXYT40N120A4HVLittelfuseUltra Low-Vsat IGBT
Produkt ist nicht verfügbar
IXYT40N120A4HVIXYSIGBT Transistors IGBT DISC 1200V
Produkt ist nicht verfügbar
IXYT40N120A4HVIXYSDescription: IGBT 1200V 40A GNX4 XPT TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
Produkt ist nicht verfügbar
IXYT55N120A4HVIXYSIGBT Transistors IGBT XPT GEN 4 1200V TO268HV
auf Bestellung 263 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.68 EUR
10+ 18.85 EUR
30+ 16.74 EUR
60+ 16.39 EUR
120+ 15.77 EUR
270+ 15.75 EUR
510+ 14.26 EUR
IXYT55N120A4HVIXYSDescription: IGBT PT 1200V 175A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/300ns
Switching Energy: 2.3mJ (on), 5.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 650 W
auf Bestellung 160 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.52 EUR
30+ 16.61 EUR
120+ 15.63 EUR
IXYT80N90C3IXYSIXYT80N90C3 SMD IGBT transistors
Produkt ist nicht verfügbar
IXYT80N90C3IXYSIGBT Transistors IGBT XPT-GENX3
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.91 EUR
10+ 19.22 EUR
30+ 18.43 EUR
120+ 16.23 EUR
IXYT80N90C3IXYSDescription: IGBT 900V 165A 830W TO268
auf Bestellung 4050 Stücke:
Lieferzeit 10-14 Tag (e)
IXYT85N120A4HVIXYSIGBT Transistors IGBT XPT GEN 4 1200V TO268HV
auf Bestellung 625 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.64 EUR
10+ 27.9 EUR
30+ 25.61 EUR
60+ 25.41 EUR
120+ 24.09 EUR
270+ 22.74 EUR
510+ 20.75 EUR
IXYT85N120A4HVIXYSDescription: IGBT PT 1200V 300A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/400ns
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Test Condition: 600V, 60A, 5Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 520 A
Power - Max: 1150 W
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.42 EUR
30+ 25.43 EUR
120+ 23.94 EUR
IXYT85N120A4HVLittelfuseDiscrete IGBT XPT Gen 4 1200V TO268HV
Produkt ist nicht verfügbar
IXYX100N120B3IXYSDescription: IGBT 1200V 188A 1150W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/153ns
Switching Energy: 7.7mJ (on), 7.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 530 A
Power - Max: 1150 W
auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
1+40.09 EUR
10+ 35.63 EUR
100+ 31.16 EUR
500+ 26.59 EUR
IXYX100N120B3LittelfuseTrans IGBT Chip N-CH 1200V 225A 1150000mW
Produkt ist nicht verfügbar
IXYX100N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 450ns
Produkt ist nicht verfügbar
IXYX100N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 450ns
Produkt ist nicht verfügbar
IXYX100N120B3IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYX100N120C3IXYSIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+42.22 EUR
10+ 38.19 EUR
30+ 36.68 EUR
120+ 32.3 EUR
510+ 30.34 EUR
IXYX100N120C3IXYSDescription: IGBT 1200V 188A 1150W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 32ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 188 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 490 A
Power - Max: 1150 W
Produkt ist nicht verfügbar
IXYX100N120C3LittelfuseTrans IGBT Chip N-CH 1200V 188A 1150000mW 3-Pin(3+Tab) PLUS 247
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
IXYX100N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
Produkt ist nicht verfügbar
IXYX100N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
Produkt ist nicht verfügbar
IXYX100N65B3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
Produkt ist nicht verfügbar
IXYX100N65B3D1IXYSDescription: IGBT PT 650V 225A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 156 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 29ns/150ns
Switching Energy: 1.27mJ (on), 1.37mJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 830 W
Produkt ist nicht verfügbar
IXYX100N65B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 358ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYX100N65B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 358ns
Produkt ist nicht verfügbar
IXYX110N120A4IXYSIGBT Transistors IGBT XPT-GEN4 1200V 110A
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+62.15 EUR
10+ 62.11 EUR
IXYX110N120A4IXYSDescription: IGBT 1200V 110A GNX4 XPT PLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
1+61.11 EUR
IXYX110N120A4LITTELFUSEDescription: LITTELFUSE - IXYX110N120A4 - IGBT, 375 A, 1.45 V, 1.36 kW, 1.2 kV, PLUS247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: TBA
hazardous: false
rohsPhthalatesCompliant: TBA
Kollektor-Emitter-Sättigungsspannung: 1.45
usEccn: EAR99
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.45
Verlustleistung Pd: 1.36
euEccn: NLR
Verlustleistung: 1.36
Bauform - Transistor: PLUS247
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 1.2
Anzahl der Pins: 3
Produktpalette: XPT GenX4 Series
Kollektor-Emitter-Spannung, max.: 1.2
productTraceability: No
DC-Kollektorstrom: 375
Betriebstemperatur, max.: 175
Kontinuierlicher Kollektorstrom: 375
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
IXYX110N120B4IXYSIGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.81 EUR
10+ 29.81 EUR
30+ 29 EUR
60+ 27.37 EUR
120+ 25.77 EUR
IXYX110N120B4IXYSDescription: IGBT 1200V 110A GEN4 XPT PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 45ns/390ns
Switching Energy: 3.6mJ (on), 3.85mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1360 W
Produkt ist nicht verfügbar
IXYX110N120B4LittelfuseDisc IGBT XPT Gen4 1200V 110A PLUS247
Produkt ist nicht verfügbar
IXYX110N120C4IXYSDescription: IGBT 1200V 110A GEN4 XPT PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 740 A
Power - Max: 1360 W
Produkt ist nicht verfügbar
IXYX110N120C4LittelfuseXPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
Produkt ist nicht verfügbar
IXYX110N120C4IXYSIGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.81 EUR
10+ 29.81 EUR
30+ 29 EUR
60+ 27.37 EUR
120+ 25.77 EUR
270+ 24.62 EUR
510+ 22.97 EUR
IXYX120N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
3+33.32 EUR
Mindestbestellmenge: 3
IXYX120N120B3LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYX120N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
3+33.32 EUR
Mindestbestellmenge: 3
IXYX120N120B3IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYX120N120B3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 30ns/340ns
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 400 nC
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1500 W
Produkt ist nicht verfügbar
IXYX120N120C3IXYSIGBT Transistors IGBT XPT-GENX3
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+57.04 EUR
10+ 57.02 EUR
30+ 53.8 EUR
IXYX120N120C3IXYSDescription: IGBT 1200V 240A 1500W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
auf Bestellung 301 Stücke:
Lieferzeit 10-14 Tag (e)
1+57.41 EUR
30+ 47.6 EUR
120+ 44.62 EUR
IXYX120N120C3LittelfuseTrans IGBT Chip N-CH 1200V 220A 1500W 3-Pin(3+Tab) PLUS 247
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
IXYX120N120C3LittelfuseTrans IGBT Chip N-CH 1200V 220A 1500000mW 3-Pin(3+Tab) PLUS 247
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
IXYX120N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
3+33.45 EUR
Mindestbestellmenge: 3
IXYX120N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
3+33.45 EUR
Mindestbestellmenge: 3
IXYX120N120C3LittelfuseTrans IGBT Chip N-CH 1200V 220A 1500W 3-Pin(3+Tab) PLUS 247
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+64.4 EUR
Mindestbestellmenge: 3
IXYX120N120C3LittelfuseTrans IGBT Chip N-CH 1200V 220A 1500W 3-Pin(3+Tab) PLUS 247
Produkt ist nicht verfügbar
IXYX140N120A4IXYSIGBT Transistors IGBT XPT-GENX4
Produkt ist nicht verfügbar
IXYX140N120A4IXYSDescription: IGBT PT 1200V 480A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
Produkt ist nicht verfügbar
IXYX140N90C3LittelfuseTrans IGBT Chip N-CH 900V 310A 1630000mW 3-Pin(3+Tab) PLUS 247
Produkt ist nicht verfügbar
IXYX140N90C3IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYX140N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
IXYX140N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYX140N90C3IXYSDescription: IGBT 900V 310A 1630W TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/145ns
Switching Energy: 4.3mJ (on), 4mJ (off)
Test Condition: 450V, 100A, 1Ohm, 15V
Gate Charge: 330 nC
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1630 W
Produkt ist nicht verfügbar
IXYX200N65B3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 60ns/370ns
Switching Energy: 5mJ (on), 4mJ (off)
Test Condition: 400V, 100A, 0Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 410 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1100 A
Power - Max: 1560 W
Produkt ist nicht verfügbar
IXYX200N65B3IXYSIGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar
IXYX200N65B3IXYSIXYX200N65B3 THT IGBT transistors
Produkt ist nicht verfügbar
IXYX25N250CV1IXYSIGBT Transistors 2500V/95A , HV XPT IGBT Copacked
Produkt ist nicht verfügbar
IXYX25N250CV1IXYSIXYX25N250CV1 THT IGBT transistors
Produkt ist nicht verfügbar
IXYX25N250CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYX25N250CV1HVIXYSIGBT Transistors 2500V/95A , HV XPT IGBT Copacked
auf Bestellung 712 Stücke:
Lieferzeit 10-14 Tag (e)
1+73.9 EUR
10+ 68.97 EUR
30+ 67.44 EUR
120+ 59.86 EUR
510+ 57.57 EUR
1020+ 54.28 EUR
IXYX25N250CV1HVIXYSIXYX25N250CV1HV THT IGBT transistors
Produkt ist nicht verfügbar
IXYX25N250CV1HVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYX25N250CV1HVIXYSDescription: IGBT 2500V 235A PLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 220 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
auf Bestellung 408 Stücke:
Lieferzeit 10-14 Tag (e)
1+79.76 EUR
10+ 71.07 EUR
100+ 62.38 EUR
IXYX300N65A3IXYSDescription: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 125 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/190ns
Switching Energy: 7.8mJ (on), 4.7mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 565 nC
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1460 A
Power - Max: 2300 W
Produkt ist nicht verfügbar
IXYX300N65A3IXYSIGBT Transistors IGBT DISC XPT
Produkt ist nicht verfügbar
IXYX30N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYX30N170CV1IXYSIGBT Transistors 1700V/108A High Voltage XPT IGBT
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.7 EUR
10+ 35.71 EUR
30+ 35.25 EUR
120+ 30.48 EUR
510+ 27.65 EUR
IXYX30N170CV1IXYSIXYX30N170CV1 THT IGBT transistors
Produkt ist nicht verfügbar
IXYX30N170CV1IXYSDescription: 1700V/108A HIGH VOLTAGE XPT IGB
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Test Condition: 850V, 30A, 2.7Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 108 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 255 A
Power - Max: 937 W
auf Bestellung 1525 Stücke:
Lieferzeit 10-14 Tag (e)
1+43 EUR
10+ 39.65 EUR
100+ 33.86 EUR
500+ 30.74 EUR
IXYX40N250CHVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 1.5kW; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 1.5kW
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYX40N250CHVIXYSDescription: IGBT 2.5KV 70A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247PLUS-HV
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 11.7mJ (on), 6.9mJ (off)
Test Condition: 1250V, 40A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 1500 W
Produkt ist nicht verfügbar
IXYX40N250CHVIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
auf Bestellung 396 Stücke:
Lieferzeit 10-14 Tag (e)
1+86.86 EUR
10+ 77.39 EUR
120+ 67.94 EUR
270+ 65.44 EUR
IXYX40N250CHVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 1.5kW; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 1.5kW
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
IXYX40N450HVIXYSIGBT Transistors High Voltage XPT IGBT
auf Bestellung 1170 Stücke:
Lieferzeit 381-385 Tag (e)
1+106.69 EUR
10+ 91.36 EUR
IXYX40N450HVLittelfuseTrans IGBT Chip N-CH 4500V 95A 660mW 3-Pin(3+Tab) TO-247PLUS-HV
Produkt ist nicht verfügbar
IXYX40N450HVIXYSIXYX40N450HV THT IGBT transistors
Produkt ist nicht verfügbar
IXYX40N450HVIXYSDescription: IGBT 4500V 95A TO247PLUS-HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Supplier Device Package: TO-247PLUS-HV
Td (on/off) @ 25°C: 36ns/110ns
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 660 W
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
1+107.34 EUR
30+ 93.93 EUR
120+ 87.22 EUR
IXYX50N170CLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYX50N170CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 460A
Turn-on time: 62ns
Turn-off time: 396ns
Type of transistor: IGBT
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 260nC
Technology: XPT™
Power dissipation: 1.5kW
Mounting: THT
Case: PLUS247™
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYX50N170CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 460A
Turn-on time: 62ns
Turn-off time: 396ns
Type of transistor: IGBT
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 260nC
Technology: XPT™
Power dissipation: 1.5kW
Mounting: THT
Case: PLUS247™
Produkt ist nicht verfügbar
IXYX50N170CIXYSDescription: IGBT 1700V 178A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 8.7mJ (on), 5.6mJ (off)
Test Condition: 850V, 50A, 1Ohm, 15V
Gate Charge: 260 nC
Part Status: Active
Current - Collector (Ic) (Max): 178 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 1500 W
auf Bestellung 601 Stücke:
Lieferzeit 10-14 Tag (e)
1+49.35 EUR
10+ 43.85 EUR
100+ 38.35 EUR
500+ 32.73 EUR
IXYX50N170CLITTELFUSEDescription: LITTELFUSE - IXYX50N170C - IGBT, 178 A, 2.8 V, 1.5 kW, 1.7 kV, PLUS247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.8
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.5
Bauform - Transistor: PLUS247
Anzahl der Pins: 3
Produktpalette: ARCA IEC Series
Kollektor-Emitter-Spannung, max.: 1.7
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175
Kontinuierlicher Kollektorstrom: 178
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
IXYX50N170CIXYSIGBT Transistors IGBT DISCRETE
auf Bestellung 682 Stücke:
Lieferzeit 10-14 Tag (e)
1+45.9 EUR
10+ 41.61 EUR
120+ 36.85 EUR
IXYY8N90C3IXYSIXYY8N90C3 SMD IGBT transistors
auf Bestellung 356 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.53 EUR
29+ 2.47 EUR
31+ 2.35 EUR
Mindestbestellmenge: 21
IXYY8N90C3IXYSDescription: IGBT 900V 20A 125W C3 TO-252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
Produkt ist nicht verfügbar
IXYY8N90C3IXYSIGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.42 EUR
10+ 4.86 EUR
70+ 3.61 EUR
280+ 3.5 EUR
560+ 3.19 EUR
1050+ 2.76 EUR
2520+ 2.64 EUR
IXYY8N90C3LittelfuseTrans IGBT Chip N-CH 900V 20A 125000mW 3-Pin(2+Tab) DPAK
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
IXYY8N90C3-TRLIXYSDiscrete Semiconductor Modules IXYY8N90C3 TRL
Produkt ist nicht verfügbar
IXYY8N90C3-TRLIXYSDescription: IXYY8N90C3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 20 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
Supplier Device Package: TO-252AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
Produkt ist nicht verfügbar