Produkte > ALPHA & OMEGA SEMICONDUCTOR INC. > Alle Produkte des Herstellers ALPHA & OMEGA SEMICONDUCTOR INC. (3869) > Seite 23 nach 65
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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AOL1424 | Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N-CH 30V 15A/70A ULTRASO8Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: UltraSO-8™ Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.2W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerSMD, Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AOL1426 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 46A 8ULTRASO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AOL1426 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 46A 8ULTRASO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AOL1428 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 12.4A ULTRASO8 Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: UltraSO-8™ Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.2W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerSMD, Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AOL1428A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 12.4A ULTRASO8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AOL1432 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 25V 12A/44A ULTRASO8 Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 12.5 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: UltraSO-8™ Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerSMD, Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AOL1432A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 25V 12A/44A ULTRASO8 Supplier Device Package: UltraSO-8™ Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.1W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerSMD, Flat Leads Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 12.5 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AOL1440 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 25V 85A 8ULTRASO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AOL1440 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 25V 85A 8ULTRASO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| AOL1448 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 11A/36A ULTRASO8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: UltraSO-8™ Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerSMD, Flat Leads |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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AOL1454 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 12A 8ULTRASO |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AOL1454_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 12A/50A ULTRASO8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AOL1454G | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 25A/46A ULTRASO8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AOL1458 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 14A/46A ULTRASO8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AOL1482 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 4.5A 8ULTRASO |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AOL1700 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 85A 8ULTRASO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AOL1700 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 85A 8ULTRASO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AOL1702 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 14A/70A ULTRASO8 Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: UltraSO-8™ Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 2.1W (Ta), 58W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerSMD, Flat Leads Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AOL1702 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 14A/70A ULTRASO8 Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: UltraSO-8™ Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 2.1W (Ta), 58W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerSMD, Flat Leads Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AOL1712 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 16A/65A ULTRASO8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AOM015V65X2 | Alpha & Omega Semiconductor Inc. |
Description: 650V SILICON CARBIDE MOSFET Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 15 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +15V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 3.5V @ 24mA Power Dissipation (Max): 312W (Tj) Rds On (Max) @ Id, Vgs: 22mOhm @ 24A, 15V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
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AOM015V75X2Q | Alpha & Omega Semiconductor Inc. |
Description: 750V SILICON CARBIDE MOSFET Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 15 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): +15V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V Grade: Automotive Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 3.5V @ 24mA Power Dissipation (Max): 312W (Tj) Rds On (Max) @ Id, Vgs: 22mOhm @ 24A, 15V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
auf Bestellung 205 Stücke: Lieferzeit 10-14 Tag (e) |
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AOM020V120X2 | Alpha & Omega Semiconductor Inc. |
Description: 1200V SILICON CARBIDE MOSFET Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 27A, 15V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 27mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 800 V |
auf Bestellung 230 Stücke: Lieferzeit 10-14 Tag (e) |
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AOM020V120X2Q | Alpha & Omega Semiconductor Inc. |
Description: 1200V SILICON CARBIDE MOSFET Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 27A, 15V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 27mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 217 Stücke: Lieferzeit 10-14 Tag (e) |
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AOM033V120X2 | Alpha & Omega Semiconductor Inc. |
Description: 1200V SILICON CARBIDE MOSFET Drive Voltage (Max Rds On, Min Rds On): 15V Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 2.8V @ 17.5mA Power Dissipation (Max): 300W (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +15V, -5V |
auf Bestellung 234 Stücke: Lieferzeit 10-14 Tag (e) |
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AOM033V120X2Q | Alpha & Omega Semiconductor Inc. |
Description: 1200V SILICON CARBIDE MOSFET Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +18V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V Grade: Automotive Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 2.8V @ 17.5mA Power Dissipation (Max): 300W (Tj) Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
auf Bestellung 145 Stücke: Lieferzeit 10-14 Tag (e) |
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AOM060V65X2 | Alpha & Omega Semiconductor Inc. |
Description: 650V SILICON CARBIDE MOSFET Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V Power Dissipation (Max): 103W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 6mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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AOM060V75X2Q | Alpha & Omega Semiconductor Inc. |
Description: 750V SILICON CARBIDE MOSFET Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): +15V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V Grade: Automotive Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 3.5V @ 6mA Power Dissipation (Max): 103W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
auf Bestellung 330 Stücke: Lieferzeit 10-14 Tag (e) |
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AOM065V120X2 | Alpha & Omega Semiconductor Inc. |
Description: 1200V SILICON CARBIDE MOSFET Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V Power Dissipation (Max): 187.5W (Tj) Vgs(th) (Max) @ Id: 3.5V @ 10mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V |
auf Bestellung 224 Stücke: Lieferzeit 10-14 Tag (e) |
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AOM065V120X2Q | Alpha & Omega Semiconductor Inc. |
Description: 1200V SILICON CARBIDE MOSFET Packaging: Tube Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +15V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V Grade: Automotive Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 3.5V @ 10mA Power Dissipation (Max): 187.5W (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 |
auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOMU66414Q | Alpha & Omega Semiconductor Inc. |
Description: DUAL N Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 8-DFN (8x5) Vgs(th) (Max) @ Id: 2.4V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 20V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 85A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 6.2W (Ta), 68W (Tc), 6.2W (Ta), 65W (Tc) Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| AOMU66464Q | Alpha & Omega Semiconductor Inc. |
Description: AOMU66464Q Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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AON1605 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 0.7A 3DFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON1605_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 0.7A 3DFN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON1606 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 700MA 3DFN Input Capacitance (Ciss) (Max) @ Vds: 62.5 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: 3-DFN (1.0 x 0.60) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 275mOhm @ 400mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON1606_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 700MA 3DFN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON1610 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 4A 6DFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON1611 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 4A 6DFN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON1611 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 4A 6DFN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON1620 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 12V 4A 6DFN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON1634 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 4A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-DFN (1.6x1.6) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON1634 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 4A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-DFN (1.6x1.6) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON2240 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 8A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON2240 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 8A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON2260 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 6A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 44mOhm @ 6A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON2260 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 6A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 44mOhm @ 6A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 30 V |
auf Bestellung 2905 Stücke: Lieferzeit 10-14 Tag (e) |
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AON2290 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N CH 100V 4.5A DFN 2X2B Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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AON2290 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N CH 100V 4.5A DFN 2X2B Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| AON2392 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CHANNEL 100V 8A 8DFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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AON2400 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 8V 8A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 2.5V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 750mV @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 4 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON2401 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 8V 8A 6DFN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON2401 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 8V 8A 6DFN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON2403 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 12V 8A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON2403 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 12V 8A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V |
auf Bestellung 2665 Stücke: Lieferzeit 10-14 Tag (e) |
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AON2405 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 8A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 4.5V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON2405 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 8A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 4.5V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON2406 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 8A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 10 V |
auf Bestellung 20498 Stücke: Lieferzeit 10-14 Tag (e) |
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AON2406 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 8A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 10 V |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON2407 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 6.3A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Rds On (Max) @ Id, Vgs: 37.5mOhm @ 6.3A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 746 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AON2407 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 6.3A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Rds On (Max) @ Id, Vgs: 37.5mOhm @ 6.3A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 746 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AOL1424 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15A/70A ULTRASO8
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.2W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 15A/70A ULTRASO8
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.2W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOL1426 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 46A 8ULTRASO
Description: MOSFET N-CH 30V 46A 8ULTRASO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOL1426 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 46A 8ULTRASO
Description: MOSFET N-CH 30V 46A 8ULTRASO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOL1428 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 12.4A ULTRASO8
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 12.4A ULTRASO8
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOL1428A |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 12.4A ULTRASO8
Description: MOSFET N-CH 30V 12.4A ULTRASO8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOL1432 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 12A/44A ULTRASO8
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 25V 12A/44A ULTRASO8
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOL1432A |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 12A/44A ULTRASO8
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Description: MOSFET N-CH 25V 12A/44A ULTRASO8
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOL1440 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 85A 8ULTRASO
Description: MOSFET N-CH 25V 85A 8ULTRASO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOL1440 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 85A 8ULTRASO
Description: MOSFET N-CH 25V 85A 8ULTRASO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOL1448 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 11A/36A ULTRASO8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Description: MOSFET N-CH 30V 11A/36A ULTRASO8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOL1454 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 12A 8ULTRASO
Description: MOSFET N-CH 40V 12A 8ULTRASO
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOL1454_001 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 12A/50A ULTRASO8
Description: MOSFET N-CH 40V 12A/50A ULTRASO8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOL1454G |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 25A/46A ULTRASO8
Description: MOSFET N-CH 40V 25A/46A ULTRASO8
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOL1458 |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 14A/46A ULTRASO8
Description: MOSFET N-CH 30V 14A/46A ULTRASO8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOL1482 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 4.5A 8ULTRASO
Description: MOSFET N-CH 100V 4.5A 8ULTRASO
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOL1700 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 85A 8ULTRASO
Description: MOSFET N-CH 30V 85A 8ULTRASO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOL1700 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 85A 8ULTRASO
Description: MOSFET N-CH 30V 85A 8ULTRASO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOL1702 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 14A/70A ULTRASO8
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 58W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 14A/70A ULTRASO8
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 58W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOL1702 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 14A/70A ULTRASO8
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 58W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 30V 14A/70A ULTRASO8
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 58W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOL1712 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 16A/65A ULTRASO8
Description: MOSFET N-CH 30V 16A/65A ULTRASO8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOM015V65X2 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 650V SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.5V @ 24mA
Power Dissipation (Max): 312W (Tj)
Rds On (Max) @ Id, Vgs: 22mOhm @ 24A, 15V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: 650V SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.5V @ 24mA
Power Dissipation (Max): 312W (Tj)
Rds On (Max) @ Id, Vgs: 22mOhm @ 24A, 15V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 47.34 EUR |
| 10+ | 34.3 EUR |
| AOM015V75X2Q |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 750V SILICON CARBIDE MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.5V @ 24mA
Power Dissipation (Max): 312W (Tj)
Rds On (Max) @ Id, Vgs: 22mOhm @ 24A, 15V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: 750V SILICON CARBIDE MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.5V @ 24mA
Power Dissipation (Max): 312W (Tj)
Rds On (Max) @ Id, Vgs: 22mOhm @ 24A, 15V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 205 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 54.67 EUR |
| 10+ | 39.96 EUR |
| AOM020V120X2 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 27A, 15V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 800 V
Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 27A, 15V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 800 V
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 48.72 EUR |
| 10+ | 35.37 EUR |
| AOM020V120X2Q |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 27A, 15V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 800 V
Qualification: AEC-Q101
Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 27A, 15V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 217 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 61.83 EUR |
| 10+ | 45.53 EUR |
| AOM033V120X2 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 2.8V @ 17.5mA
Power Dissipation (Max): 300W (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
Description: 1200V SILICON CARBIDE MOSFET
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 2.8V @ 17.5mA
Power Dissipation (Max): 300W (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 34.47 EUR |
| 10+ | 24.53 EUR |
| AOM033V120X2Q |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 2.8V @ 17.5mA
Power Dissipation (Max): 300W (Tj)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: 1200V SILICON CARBIDE MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 2.8V @ 17.5mA
Power Dissipation (Max): 300W (Tj)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 39.73 EUR |
| 10+ | 28.51 EUR |
| AOM060V65X2 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 650V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
Description: 650V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.67 EUR |
| 10+ | 13.55 EUR |
| 240+ | 9.22 EUR |
| AOM060V75X2Q |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 750V SILICON CARBIDE MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: 750V SILICON CARBIDE MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 330 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.65 EUR |
| 10+ | 15.72 EUR |
| 240+ | 10.94 EUR |
| AOM065V120X2 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Power Dissipation (Max): 187.5W (Tj)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V
Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Power Dissipation (Max): 187.5W (Tj)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V
auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.02 EUR |
| 10+ | 10.96 EUR |
| AOM065V120X2Q |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Power Dissipation (Max): 187.5W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Power Dissipation (Max): 187.5W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 30.23 EUR |
| 10+ | 21.42 EUR |
| AOMU66414Q |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: DUAL N
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-DFN (8x5)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 6.2W (Ta), 68W (Tc), 6.2W (Ta), 65W (Tc)
Technology: MOSFET (Metal Oxide)
Description: DUAL N
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-DFN (8x5)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 6.2W (Ta), 68W (Tc), 6.2W (Ta), 65W (Tc)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AON1605 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 0.7A 3DFN
Description: MOSFET P-CH 20V 0.7A 3DFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AON1605_001 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 0.7A 3DFN
Description: MOSFET P-CH 20V 0.7A 3DFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON1606 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 700MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 62.5 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 3-DFN (1.0 x 0.60)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 275mOhm @ 400mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 700MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 62.5 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 3-DFN (1.0 x 0.60)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 275mOhm @ 400mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AON1606_001 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 700MA 3DFN
Description: MOSFET N-CH 20V 700MA 3DFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON1610 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 4A 6DFN
Description: MOSFET N-CH 20V 4A 6DFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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Stück im Wert von UAH
| AON1611 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 4A 6DFN
Description: MOSFET P-CH 20V 4A 6DFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON1611 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 4A 6DFN
Description: MOSFET P-CH 20V 4A 6DFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON1620 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 12V 4A 6DFN
Description: MOSFET N-CH 12V 4A 6DFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON1634 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V
Description: MOSFET N-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AON1634 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V
Description: MOSFET N-CH 30V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON2240 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 20 V
Description: MOSFET N-CH 40V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON2240 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 20 V
Description: MOSFET N-CH 40V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AON2260 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 6A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 30 V
Description: MOSFET N-CH 60V 6A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AON2260 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 30 V
Description: MOSFET N-CH 60V 6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 30 V
auf Bestellung 2905 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.82 EUR |
| 19+ | 1.13 EUR |
| 50+ | 0.83 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.57 EUR |
| AON2290 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 100V 4.5A DFN 2X2B
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Description: MOSFET N CH 100V 4.5A DFN 2X2B
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.82 EUR |
| 19+ | 1.14 EUR |
| AON2290 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 100V 4.5A DFN 2X2B
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Description: MOSFET N CH 100V 4.5A DFN 2X2B
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| AON2392 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 100V 8A 8DFN
Description: MOSFET N-CHANNEL 100V 8A 8DFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| AON2400 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 8V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 2.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 750mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 4 V
Description: MOSFET N-CH 8V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 2.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 750mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 4 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON2401 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 8V 8A 6DFN
Description: MOSFET P-CH 8V 8A 6DFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON2401 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 8V 8A 6DFN
Description: MOSFET P-CH 8V 8A 6DFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON2403 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V
Description: MOSFET P-CH 12V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AON2403 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V
Description: MOSFET P-CH 12V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V
auf Bestellung 2665 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.27 EUR |
| 25+ | 0.86 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.42 EUR |
| AON2405 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
Description: MOSFET P-CH 20V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON2405 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
Description: MOSFET P-CH 20V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AON2406 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 10 V
Description: MOSFET N-CH 20V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 10 V
auf Bestellung 20498 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.87 EUR |
| 18+ | 1.17 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.52 EUR |
| AON2406 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 10 V
Description: MOSFET N-CH 20V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.45 EUR |
| 6000+ | 0.42 EUR |
| 9000+ | 0.4 EUR |
| 15000+ | 0.38 EUR |
| AON2407 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 6.3A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 6.3A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 746 pF @ 15 V
Description: MOSFET P-CH 30V 6.3A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 6.3A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 746 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON2407 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 6.3A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 6.3A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 746 pF @ 15 V
Description: MOSFET P-CH 30V 6.3A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 6.3A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 746 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH