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AOI468 AOI468 Alpha & Omega Semiconductor Inc. AOI468.pdf Description: MOSFET N CH 300V 11.5A TO252
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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AOI472A AOI472A Alpha & Omega Semiconductor Inc. TO251A.pdf Description: MOSFET N-CH 25V 18A/46A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 15 V
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AOI482 AOI482 Alpha & Omega Semiconductor Inc. AOI482.pdf Description: MOSFET N-CH 100V 5A/32A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
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AOI4C60 AOI4C60 Alpha & Omega Semiconductor Inc. AOD_I4C60.pdf Description: MOSFET N-CH 600V 4A TO-252
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AOI4N60 AOI4N60 Alpha & Omega Semiconductor Inc. AOI4N60.pdf Description: MOSFET N-CH 600V 4A TO251A
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AOI4S60 AOI4S60 Alpha & Omega Semiconductor Inc. AOI4S60.pdf Description: MOSFET N-CH 600V 4A TO251A
Input Capacitance (Ciss) (Max) @ Vds: 263 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251A
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
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AOI4T60 AOI4T60 Alpha & Omega Semiconductor Inc. AOI4T60.pdf Description: MOSFET N-CH 600V 4A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251A
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V
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AOI4T60P AOI4T60P Alpha & Omega Semiconductor Inc. AOD4T60P.pdf Description: MOSFET N-CH
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AOI508 AOI508 Alpha & Omega Semiconductor Inc. AOI508.pdf Description: MOSFET N-CH 30V 22A/70A TO251A
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AOI510 AOI510 Alpha & Omega Semiconductor Inc. AOI510.pdf Description: MOSFET N-CH 30V 70A TO251A
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AOI510 AOI510 Alpha & Omega Semiconductor Inc. AOI510.pdf Description: MOSFET N-CH 30V 70A TO251A
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AOI514 AOI514 Alpha & Omega Semiconductor Inc. AOI514.pdf Description: MOSFET N-CH 30V 17A/46A TO251A
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AOI516 AOI516 Alpha & Omega Semiconductor Inc. AOI516.pdf Description: MOSFET N-CH 30V 17A TO251A
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AOI516_001 AOI516_001 Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 30V 18A
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AOI516_002 AOI516_002 Alpha & Omega Semiconductor Inc. AOI516.pdf Description: MOSFET N-CH 30V 18A
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AOI518 AOI518 Alpha & Omega Semiconductor Inc. AOD518_AOI518.pdf Description: MOSFET N-CH 30V 18A/46A TO251A
Supplier Device Package: TO-251A
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 951 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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AOI518_001 Alpha & Omega Semiconductor Inc. AOD518_AOI518.pdf Description: MOSFET N-CH 30V 18A
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AOI530 AOI530 Alpha & Omega Semiconductor Inc. AOI530.pdf Description: MOSFET N-CH 30V 23A/70A TO251A
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-251A
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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AOI538 AOI538 Alpha & Omega Semiconductor Inc. AOI538.pdf Description: MOSFET N-CH 30V 34A
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AOI5N40 AOI5N40 Alpha & Omega Semiconductor Inc. AOI5N40.pdf Description: MOSFET N-CH 400V 4.2A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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AOI600A60 AOI600A60 Alpha & Omega Semiconductor Inc. AOI600A60.pdf Description: MOSFET N-CH 600V 8A TO251A
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500+1.45 EUR
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AOI66406 Alpha & Omega Semiconductor Inc. AOI66406.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
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AOI7N60 AOI7N60 Alpha & Omega Semiconductor Inc. TO251A.pdf Description: MOSFET N-CH 600V 7A TO251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251A
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
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AOI7N65 AOI7N65 Alpha & Omega Semiconductor Inc. TO251A.pdf Description: MOSFET N-CH 650V 7A TO251A
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251A
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
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AOI7S65 AOI7S65 Alpha & Omega Semiconductor Inc. AOI7S65.pdf Description: MOSFET N-CH 650V 7A TO251A
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AOI8N25 AOI8N25 Alpha & Omega Semiconductor Inc. AOI8N25.pdf Description: MOSFET N-CH 250V 8A TO251A
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AOI950A70 AOI950A70 Alpha & Omega Semiconductor Inc. AOI950A70.pdf Description: MOSFET N-CH 700V 5A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1A, 10V
Power Dissipation (Max): 56.5W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 461 pF @ 100 V
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AOI9N50 AOI9N50 Alpha & Omega Semiconductor Inc. AOI9N50.pdf Description: MOSFET N-CH 500V 9A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251A
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
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AOK033V120X2 AOK033V120X2 Alpha & Omega Semiconductor Inc. AOK033V120X2.pdf Description: 1200V SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 2.8V @ 17.5mA
Power Dissipation (Max): 300W (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK033V120X2Q AOK033V120X2Q Alpha & Omega Semiconductor Inc. AOK033V120X2Q.pdf Description: 1200V SILICON CARBIDE MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 2.8V @ 17.5mA
Power Dissipation (Max): 300W (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK042A60FD AOK042A60FD Alpha & Omega Semiconductor Inc. AOK042A60FD.pdf Description: N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 25A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9165 pF @ 100 V
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AOK060V65X2 AOK060V65X2 Alpha & Omega Semiconductor Inc. AOK060V65X2.pdf Description: 650V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
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AOK060V75X2Q AOK060V75X2Q Alpha & Omega Semiconductor Inc. AOK060V75X2Q.pdf Description: 750V SILICON CARBIDE MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK065A60 AOK065A60 Alpha & Omega Semiconductor Inc. AOK065A60.pdf Description: N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc)
Power Dissipation (Max): 8.3W (Ta), 208W (Tc)
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
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AOK065A60FD Alpha & Omega Semiconductor Inc. Description: AOK065A60FD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 100 V
Produkt ist nicht verfügbar
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AOK065V120X2Q AOK065V120X2Q Alpha & Omega Semiconductor Inc. AOK065V120X2Q.pdf Description: 1200V SILICON CARBIDE MOSFET
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Power Dissipation (Max): 187.5W (Tj)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
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AOK065V65X2 AOK065V65X2 Alpha & Omega Semiconductor Inc. AOK065V65X2.pdf Description: MOSFET N-CH 650V 40.3A TO247
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 58.8 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Power Dissipation (Max): 187.5W (Ta)
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AOK095A60 AOK095A60 Alpha & Omega Semiconductor Inc. AOK095A60.pdf Description: MOSFET N-CH 600V 38A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 378W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK095A60FD AOK095A60FD Alpha & Omega Semiconductor Inc. AOK095A60FD.pdf Description: AOK095A60FD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 100 V
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AOK10B60D AOK10B60D Alpha & Omega Semiconductor Inc. TO247.pdf Description: IGBT 600V 20A TO-247
Power - Max: 163 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Part Status: Not For New Designs
Packaging: Tube
Gate Charge: 17.4 nC
Test Condition: 400V, 10A, 30Ohm, 15V
Switching Energy: 260µJ (on), 70µJ (off)
Td (on/off) @ 25°C: 10ns/72ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
Reverse Recovery Time (trr): 105 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
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AOK10N90 AOK10N90 Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N-CH 900V 10A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 403W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOK125A60 AOK125A60 Alpha & Omega Semiconductor Inc. AOK125A60.pdf Description: MOSFET N-CH 600V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V
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AOK15B60D AOK15B60D Alpha & Omega Semiconductor Inc. TO247.pdf Description: IGBT 600V 30A TO-247
Power - Max: 167 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 30 A
Gate Charge: 25.4 nC
Test Condition: 400V, 15A, 20Ohm, 15V
Switching Energy: 510µJ (on), 110µJ (off)
Td (on/off) @ 25°C: 23ns/74ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A
Reverse Recovery Time (trr): 196 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK160A60 AOK160A60 Alpha & Omega Semiconductor Inc. AOK160A60.pdf Description: MOSFET N-CH 600V 24A TO247
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AOK18N65L AOK18N65L Alpha & Omega Semiconductor Inc. AOK18N65.pdf Description: MOSFET N-CH 650V 18A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOK20120XSD AOK20120XSD Alpha & Omega Semiconductor Inc. Description: DIODE ARRAY SIC 1200V 31A TO-247
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io) (per Diode): 31A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK20B120D1 AOK20B120D1 Alpha & Omega Semiconductor Inc. AOK20B120D1.pdf Description: IGBT 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/152ns
Switching Energy: 940µJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 67.5 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 340 W
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AOK20B120E1 AOK20B120E1 Alpha & Omega Semiconductor Inc. TO247.pdf Description: IGBT 1200V 20A TO247
Power - Max: 333 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 60.5 nC
Test Condition: 600V, 20A, 15Ohm, 15V
Switching Energy: 830µJ (off)
Td (on/off) @ 25°C: -/134ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK20B120E2 AOK20B120E2 Alpha & Omega Semiconductor Inc. AOK20B120E2.pdf Description: IGBT 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/123ns
Switching Energy: 820µJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 53.5 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 250 W
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AOK20B135D1 AOK20B135D1 Alpha & Omega Semiconductor Inc. AOK20B135D1.pdf Description: IGBT 1350V 40A TO-247
Power - Max: 340 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 40 A
Part Status: Not For New Designs
Gate Charge: 66 nC
Test Condition: 600V, 20A, 15Ohm, 15V
Switching Energy: 1.05mJ (off)
Td (on/off) @ 25°C: -/156ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK20B135E1 AOK20B135E1 Alpha & Omega Semiconductor Inc. AOK20B135E1.pdf Description: IGBT 1350V 20A 340W TO247
Power - Max: 250 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 40 A
Part Status: Not For New Designs
Gate Charge: 58 nC
Test Condition: 600V, 20A, 15Ohm, 15V
Switching Energy: 800µJ (off)
Td (on/off) @ 25°C: -/134ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOK20B60D1 AOK20B60D1 Alpha & Omega Semiconductor Inc. AOK20B60D1.pdf Description: IGBT 600V 40A 180W TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 167 W
Current - Collector Pulsed (Icm): 74 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Not For New Designs
Gate Charge: 24.6 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 760µJ (on), 180µJ (off)
Td (on/off) @ 25°C: 20ns/66ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Reverse Recovery Time (trr): 107 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
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AOK20B65M1 AOK20B65M1 Alpha & Omega Semiconductor Inc. AOK20B65M1.pdf Description: IGBT 650V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 322 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 26ns/122ns
Switching Energy: 470µJ (on), 270µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 46 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 227 W
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AOK20B65M2 AOK20B65M2 Alpha & Omega Semiconductor Inc. AOK20B65M2.pdf Description: IGBT 650V 40A TO-247
Power - Max: 227 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
Part Status: Active
Gate Charge: 46 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 580µJ (on), 280µJ (off)
Td (on/off) @ 25°C: 26ns/123ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
Reverse Recovery Time (trr): 292 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK20N60L AOK20N60L Alpha & Omega Semiconductor Inc. AOK20N60L.pdf Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 10A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
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AOK20S60L AOK20S60L Alpha & Omega Semiconductor Inc. AOK20S60L.pdf Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
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AOK22N50L AOK22N50L Alpha & Omega Semiconductor Inc. AOK22N50.pdf Description: MOSFET N-CH 500V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V
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AOK2500L AOK2500L Alpha & Omega Semiconductor Inc. AOK2500L.pdf Description: MOSFET N-CH 150V 14A/180A TO247
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 500W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V
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AOK27S60L AOK27S60L Alpha & Omega Semiconductor Inc. TO247.pdf Description: MOSFET N-CH 600V 27A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V
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AOK29S50L AOK29S50L Alpha & Omega Semiconductor Inc. AOK29S50.pdf Description: MOSFET N-CH 500V 29A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 100 V
Produkt ist nicht verfügbar
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AOI468 AOI468.pdf
AOI468
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 300V 11.5A TO252
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
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AOI472A TO251A.pdf
AOI472A
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 18A/46A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 15 V
Produkt ist nicht verfügbar
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AOI482 AOI482.pdf
AOI482
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 5A/32A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Produkt ist nicht verfügbar
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AOI4C60 AOD_I4C60.pdf
AOI4C60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 4A TO-252
Produkt ist nicht verfügbar
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AOI4N60 AOI4N60.pdf
AOI4N60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 4A TO251A
Produkt ist nicht verfügbar
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AOI4S60 AOI4S60.pdf
AOI4S60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 4A TO251A
Input Capacitance (Ciss) (Max) @ Vds: 263 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251A
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
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AOI4T60 AOI4T60.pdf
AOI4T60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 4A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251A
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V
Produkt ist nicht verfügbar
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AOI4T60P AOD4T60P.pdf
AOI4T60P
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH
Produkt ist nicht verfügbar
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AOI508 AOI508.pdf
AOI508
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 22A/70A TO251A
Produkt ist nicht verfügbar
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AOI510 AOI510.pdf
AOI510
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 70A TO251A
auf Bestellung 3288 Stücke:
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AOI510 AOI510.pdf
AOI510
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 70A TO251A
Produkt ist nicht verfügbar
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AOI514 AOI514.pdf
AOI514
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 17A/46A TO251A
Produkt ist nicht verfügbar
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AOI516 AOI516.pdf
AOI516
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 17A TO251A
Produkt ist nicht verfügbar
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AOI516_001
AOI516_001
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 18A
Produkt ist nicht verfügbar
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AOI516_002 AOI516.pdf
AOI516_002
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 18A
Produkt ist nicht verfügbar
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AOI518 AOD518_AOI518.pdf
AOI518
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 18A/46A TO251A
Supplier Device Package: TO-251A
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 951 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar
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AOI518_001 AOD518_AOI518.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 18A
Produkt ist nicht verfügbar
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AOI530 AOI530.pdf
AOI530
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 23A/70A TO251A
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-251A
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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AOI538 AOI538.pdf
AOI538
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 34A
Produkt ist nicht verfügbar
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AOI5N40 AOI5N40.pdf
AOI5N40
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 400V 4.2A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
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AOI600A60 AOI600A60.pdf
AOI600A60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 8A TO251A
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.51 EUR
10+2.25 EUR
100+1.76 EUR
500+1.45 EUR
1000+1.14 EUR
2000+1.07 EUR
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AOI66406 AOI66406.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
Produkt ist nicht verfügbar
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AOI7N60 TO251A.pdf
AOI7N60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251A
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Produkt ist nicht verfügbar
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AOI7N65 TO251A.pdf
AOI7N65
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO251A
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251A
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
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AOI7S65 AOI7S65.pdf
AOI7S65
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO251A
Produkt ist nicht verfügbar
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AOI8N25 AOI8N25.pdf
AOI8N25
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 250V 8A TO251A
Produkt ist nicht verfügbar
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AOI950A70 AOI950A70.pdf
AOI950A70
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 5A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1A, 10V
Power Dissipation (Max): 56.5W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 461 pF @ 100 V
auf Bestellung 3461 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.62 EUR
70+2.09 EUR
140+1.65 EUR
560+1.4 EUR
1050+1.14 EUR
2030+1.07 EUR
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AOI9N50 AOI9N50.pdf
AOI9N50
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 9A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251A
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Produkt ist nicht verfügbar
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AOK033V120X2 AOK033V120X2.pdf
AOK033V120X2
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 2.8V @ 17.5mA
Power Dissipation (Max): 300W (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+35.88 EUR
10+25.99 EUR
25+23.44 EUR
240+19.29 EUR
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AOK033V120X2Q AOK033V120X2Q.pdf
AOK033V120X2Q
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 2.8V @ 17.5mA
Power Dissipation (Max): 300W (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 214 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+41.45 EUR
10+30.31 EUR
25+27.44 EUR
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AOK042A60FD AOK042A60FD.pdf
AOK042A60FD
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 25A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9165 pF @ 100 V
Produkt ist nicht verfügbar
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AOK060V65X2 AOK060V65X2.pdf
AOK060V65X2
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 650V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.37 EUR
10+11.28 EUR
240+9.47 EUR
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AOK060V75X2Q AOK060V75X2Q.pdf
AOK060V75X2Q
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 750V SILICON CARBIDE MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.83 EUR
10+13.08 EUR
240+11.38 EUR
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AOK065A60 AOK065A60.pdf
AOK065A60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc)
Power Dissipation (Max): 8.3W (Ta), 208W (Tc)
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
Produkt ist nicht verfügbar
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AOK065A60FD
Hersteller: Alpha & Omega Semiconductor Inc.
Description: AOK065A60FD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 100 V
Produkt ist nicht verfügbar
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AOK065V120X2Q AOK065V120X2Q.pdf
AOK065V120X2Q
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Power Dissipation (Max): 187.5W (Tj)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
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AOK065V65X2 AOK065V65X2.pdf
AOK065V65X2
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 40.3A TO247
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 58.8 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Power Dissipation (Max): 187.5W (Ta)
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AOK095A60 AOK095A60.pdf
AOK095A60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 38A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 378W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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2+12.84 EUR
30+7.37 EUR
120+6.15 EUR
510+5.27 EUR
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AOK095A60FD AOK095A60FD.pdf
AOK095A60FD
Hersteller: Alpha & Omega Semiconductor Inc.
Description: AOK095A60FD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 100 V
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AOK10B60D TO247.pdf
AOK10B60D
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 20A TO-247
Power - Max: 163 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Part Status: Not For New Designs
Packaging: Tube
Gate Charge: 17.4 nC
Test Condition: 400V, 10A, 30Ohm, 15V
Switching Energy: 260µJ (on), 70µJ (off)
Td (on/off) @ 25°C: 10ns/72ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
Reverse Recovery Time (trr): 105 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar
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AOK10N90 AOSGreenPolicy.pdf
AOK10N90
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 900V 10A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 403W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOK125A60 AOK125A60.pdf
AOK125A60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V
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AOK15B60D TO247.pdf
AOK15B60D
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 30A TO-247
Power - Max: 167 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 30 A
Gate Charge: 25.4 nC
Test Condition: 400V, 15A, 20Ohm, 15V
Switching Energy: 510µJ (on), 110µJ (off)
Td (on/off) @ 25°C: 23ns/74ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A
Reverse Recovery Time (trr): 196 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOK160A60 AOK160A60.pdf
AOK160A60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 24A TO247
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2+11.02 EUR
30+6.21 EUR
60+5.63 EUR
120+5.15 EUR
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AOK18N65L AOK18N65.pdf
AOK18N65L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 18A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOK20120XSD
AOK20120XSD
Hersteller: Alpha & Omega Semiconductor Inc.
Description: DIODE ARRAY SIC 1200V 31A TO-247
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io) (per Diode): 31A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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2+20.75 EUR
10+14.97 EUR
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AOK20B120D1 AOK20B120D1.pdf
AOK20B120D1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/152ns
Switching Energy: 940µJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 67.5 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 340 W
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AOK20B120E1 TO247.pdf
AOK20B120E1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 1200V 20A TO247
Power - Max: 333 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 60.5 nC
Test Condition: 600V, 20A, 15Ohm, 15V
Switching Energy: 830µJ (off)
Td (on/off) @ 25°C: -/134ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOK20B120E2 AOK20B120E2.pdf
AOK20B120E2
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/123ns
Switching Energy: 820µJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 53.5 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 250 W
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AOK20B135D1 AOK20B135D1.pdf
AOK20B135D1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 1350V 40A TO-247
Power - Max: 340 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 40 A
Part Status: Not For New Designs
Gate Charge: 66 nC
Test Condition: 600V, 20A, 15Ohm, 15V
Switching Energy: 1.05mJ (off)
Td (on/off) @ 25°C: -/156ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 156 Stücke:
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2+11.38 EUR
30+6.44 EUR
120+5.36 EUR
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AOK20B135E1 AOK20B135E1.pdf
AOK20B135E1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 1350V 20A 340W TO247
Power - Max: 250 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 40 A
Part Status: Not For New Designs
Gate Charge: 58 nC
Test Condition: 600V, 20A, 15Ohm, 15V
Switching Energy: 800µJ (off)
Td (on/off) @ 25°C: -/134ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOK20B60D1 AOK20B60D1.pdf
AOK20B60D1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 40A 180W TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 167 W
Current - Collector Pulsed (Icm): 74 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Not For New Designs
Gate Charge: 24.6 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 760µJ (on), 180µJ (off)
Td (on/off) @ 25°C: 20ns/66ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Reverse Recovery Time (trr): 107 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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AOK20B65M1 AOK20B65M1.pdf
AOK20B65M1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 322 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 26ns/122ns
Switching Energy: 470µJ (on), 270µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 46 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 227 W
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AOK20B65M2 AOK20B65M2.pdf
AOK20B65M2
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 40A TO-247
Power - Max: 227 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
Part Status: Active
Gate Charge: 46 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 580µJ (on), 280µJ (off)
Td (on/off) @ 25°C: 26ns/123ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
Reverse Recovery Time (trr): 292 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 73 Stücke:
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3+8.73 EUR
30+4.86 EUR
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AOK20N60L AOK20N60L.pdf
AOK20N60L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 10A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
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30+6.19 EUR
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AOK20S60L AOK20S60L.pdf
AOK20S60L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
Produkt ist nicht verfügbar
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AOK22N50L AOK22N50.pdf
AOK22N50L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V
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AOK2500L AOK2500L.pdf
AOK2500L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 14A/180A TO247
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 500W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V
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AOK27S60L TO247.pdf
AOK27S60L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 27A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V
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AOK29S50L AOK29S50.pdf
AOK29S50L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 29A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 100 V
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